CN103078613A - MOS (metal oxide semiconductor) tube driving circuit - Google Patents
MOS (metal oxide semiconductor) tube driving circuit Download PDFInfo
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- CN103078613A CN103078613A CN2012105840054A CN201210584005A CN103078613A CN 103078613 A CN103078613 A CN 103078613A CN 2012105840054 A CN2012105840054 A CN 2012105840054A CN 201210584005 A CN201210584005 A CN 201210584005A CN 103078613 A CN103078613 A CN 103078613A
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Abstract
The invention relates to the field of the LED (light emitting diode) power switch circuit, in particular to an MOS (metal oxide semiconductor) tube driving circuit. The MOS (metal oxide semiconductor) tube driving circuit comprises a perfusion circuit, a diode, a charging current-limiting resistor, a first resistor and an MOS tube, wherein the output end of the perfusion circuit is simultaneously connected with one ends of the diode and the charging current-limiting resistor; the other end of the diode is connected with one end of the first resistor; and the grid electrode of the MOS tube is simultaneously connected with the other ends of the charging current-limiting resistor and the first resistor. According to the technical scheme of the embodiment, one discharging path is connected to the charging current-limiting resistor in parallel and is conduced when the MOS tube discharges, and reverse-biased cutoff is carried out when the MOS tube charges, the discharge rate of the MOS tube is prevented from being affected by the charging current-limiting resistor, the MOS tube switching rate is guaranteed, and the working stability of the MOS tube is improved.
Description
The present invention relates to LED power switch circuit field, particularly a kind of metal-oxide-semiconductor drive circuit.
Background technology
Metal oxide semiconductor field effect tube (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), being called for short metal-oxide half field effect transistor, metal-oxide-semiconductor, is a kind of field-effect transistor that can be widely used in analog circuit and digital circuit.Metal oxide semiconductor field effect tube is according to the difference of its " raceway groove " polarity, the P channel-type that N channel-type that electronics occupies the majority and hole occupy the majority be can be divided into, N-type metal-oxide half field effect transistor (NMOSFET) and P type metal-oxide half field effect transistor (PMOSFET) are commonly called.
On existing metal-oxide-semiconductor manufacturing process, the current capacity of the lead-in wire of metal-oxide-semiconductor grid has certain limit, and when perfusion circuit saturation conduction, inner VCC power supply can produce larger electric current to the instantaneous charging of metal-oxide-semiconductor grid, very easily damages the input of metal-oxide-semiconductor.Because the existence of the problems referred to above, those skilled in the art are for fear of the damage of metal-oxide-semiconductor, and the suitable charging current limiter resistance of usually contacting in the circuit of gate charges in concrete circuit is to reach the purpose of the current value that limits instantaneous charging.
The inventor finds that existing protect measure has following defective under process is scrutinized and verified:
When the charging current limiter resistance resistance value that adopts on the existing metal-oxide-semiconductor manufacturing process was larger, the grid of metal-oxide-semiconductor-source voltage climbing speed was slower, and the shutoff ringing range of secondary diode obviously reduces, and radiation EMI also can reduce simultaneously.But owing to having increased charging current limiter resistance in the circuit, when the perfusion circuit ended, the discharge rate of metal-oxide-semiconductor was subject to significant restrictions;
When the perfusion circuit charges, its inner VCC power generation electric current, the voltage generation current discharge that grid-source electrode fills, but because grid-source voltage is much smaller than perfusion inside circuit VCC voltage, the existence of charging current limiter resistance is in the discharge rate that has obviously reduced metal-oxide-semiconductor, also can make the switch motion of metal-oxide-semiconductor slow down, affect the effect of circuit.
Summary of the invention
The goal of the invention of the embodiment of the invention is to provide a kind of metal-oxide-semiconductor drive circuit, uses the discharge rate that this technical scheme can prevent charging current limiter Resistance Influence metal-oxide-semiconductor, has guaranteed the metal-oxide-semiconductor switching rate, has improved the stability of metal-oxide-semiconductor work.
In order to realize the foregoing invention purpose, complete skill scheme of the present invention is:
A kind of metal-oxide-semiconductor drive circuit comprises the perfusion circuit; Also comprise diode, charging current limiter resistance, the first resistance, metal-oxide-semiconductor; The output of described perfusion circuit connects an end of described diode and described charging current limiter resistance simultaneously; The other end of described diode connects an end of described the first resistance; The grid of described metal-oxide-semiconductor connects the other end of described charging current limiter resistance and described the first resistance simultaneously.
Optionally, also comprise the second resistance; One end of described the second resistance connects the grid of described metal-oxide-semiconductor, and the other end connects the source electrode of described metal-oxide-semiconductor.
Optionally, the resistance value of described charging current limiter resistance is 22 ~ 100 ohm.
Optionally, described the first resistance is designated as R2, and its resistance value is:
, R1 is the resistance value of described charging current limiter resistance.
Optionally, described the second resistance is designated as R3, and its resistance value is:
, R1 is the resistance value of described charging current limiter resistance.
Therefore, use the present embodiment technical scheme, discharge path in parallel on charging current limiter resistance.Conducting when this discharge path discharges at metal-oxide-semiconductor, anti-inclined to one side the cut-off prevented the discharge rate of charging current limiter Resistance Influence metal-oxide-semiconductor when metal-oxide-semiconductor charges, and guaranteed the metal-oxide-semiconductor switching rate, improved the stability of metal-oxide-semiconductor work.
The present invention's second resistance can also be between the grid-source electrode of metal-oxide-semiconductor in parallel provides many one discharge path, when having guaranteed the discharge rate of metal-oxide-semiconductor, so that metal-oxide-semiconductor work is more stable for metal-oxide-semiconductor.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The circuit diagram that Fig. 1 provides for the embodiment of the invention 1;
The circuit diagram that Fig. 2 provides for the embodiment of the invention 2.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Embodiment 1:
As shown in Figure 1, the present embodiment provides a kind of metal-oxide-semiconductor drive circuit, and it comprises perfusion circuit (metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 consist of); Also comprise diode D1, charging current limiter resistance R 1, the first resistance R 2, metal-oxide-semiconductor Q3; The output of perfusion circuit connects an end of diode D1 and charging current limiter resistance R 1 simultaneously; The other end of diode D1 connects an end of the first resistance R 2; The grid G of metal-oxide-semiconductor Q3 connects the other end of described charging current limiter resistance R 1 and the first resistance R 2 simultaneously.
Embodiment 2:
As shown in Figure 2, the present embodiment provides a kind of discharge rate better metal-oxide-semiconductor drive circuit, and it comprises perfusion circuit (metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 consist of); Also comprise diode D1, charging current limiter resistance R 1, the first resistance R 2, metal-oxide-semiconductor Q3; The output of perfusion circuit connects an end of diode D1 and charging current limiter resistance R 1 simultaneously; The other end of diode D1 connects an end of the first resistance R 2; The grid G of metal-oxide-semiconductor Q3 connects the other end of described charging current limiter resistance R 1 and the first resistance R 2 simultaneously.Also comprise the second resistance R 3; One end of the second resistance R 3 connects the grid G of metal-oxide-semiconductor Q3, and the other end connects the source S of described metal-oxide-semiconductor.
Diode D1 and the first resistance R 2, the second resistance R 3 mainly are to improve discharge loop for metal-oxide-semiconductor Q3 turn-offs, because the Switching Power Supply switching frequency is higher, so D1 should select the high-speed switch diode.
Choosing of charging current limiter resistance R 1 resistance will be generally 12V according to size, the frequency of driving pulse and the power supply VCC(VCC of perfusion circuit of the input capacitance of metal-oxide-semiconductor) voltage swing determine, the resistance value of charging current limiter resistance R 1 is 22 ~ 100 ohm.
As preferred technical scheme, the resistance value of the first resistance R 2 is:
, R1 is the resistance value of described charging current limiter resistance.
As preferred technical scheme, the resistance value of the second resistance R 3 is:
, R1 is the resistance value of described charging current limiter resistance.
Device embodiment described above only is schematic, wherein said unit as the separating component explanation can or can not be physically to separate also, the parts that show as the unit can be or can not be physical locations also, namely can be positioned at a place, perhaps also can be distributed on a plurality of network element.Can select according to the actual needs wherein some or all of module to realize the purpose of the present embodiment scheme.Those of ordinary skills namely can understand and implement in the situation that do not pay performing creative labour.
Through the above description of the embodiments, those skilled in the art can be well understood to each execution mode and can realize by the mode that software adds essential general hardware platform, can certainly pass through hardware.Based on such understanding, the part that technique scheme contributes to prior art in essence in other words can embody with the form of software product, this computer software product can be stored in the computer-readable recording medium, such as ROM/RAM, magnetic disc, CD etc., comprise that some instructions are with so that a computer equipment (can be personal computer, server, perhaps network equipment etc.) carry out the described method of some part of each embodiment or embodiment.
Above-described execution mode does not consist of the restriction to this technical scheme protection range.Any at above-mentioned execution mode spirit and principle within do modification, be equal to and replace and improvement etc., all should be included within the protection range of this technical scheme.
Claims (5)
1. a metal-oxide-semiconductor drive circuit comprises the perfusion circuit, it is characterized in that:
Also comprise diode, charging current limiter resistance, the first resistance, metal-oxide-semiconductor;
The output of described perfusion circuit connects an end of described diode and described charging current limiter resistance simultaneously;
The other end of described diode connects an end of described the first resistance;
The grid of described metal-oxide-semiconductor connects the other end of described charging current limiter resistance and described the first resistance simultaneously.
2. a kind of metal-oxide-semiconductor drive circuit according to claim 2 is characterized in that:
Also comprise the second resistance;
One end of described the second resistance connects the grid of described metal-oxide-semiconductor, and the other end connects the source electrode of described metal-oxide-semiconductor.
3. according to claim 1,2 described a kind of metal-oxide-semiconductor drive circuits, it is characterized in that:
The resistance value of described charging current limiter resistance is 22 ~ 100 ohm.
4. a kind of metal-oxide-semiconductor drive circuit according to claim 3 is characterized in that:
Described the first resistance is designated as R2, and its resistance value is:
, R1 is the resistance value of described charging current limiter resistance.
5. a kind of metal-oxide-semiconductor drive circuit according to claim 3 is characterized in that:
Described the second resistance is designated as R3, and its resistance value is:
, R1 is the resistance value of described charging current limiter resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105840054A CN103078613A (en) | 2012-12-28 | 2012-12-28 | MOS (metal oxide semiconductor) tube driving circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105840054A CN103078613A (en) | 2012-12-28 | 2012-12-28 | MOS (metal oxide semiconductor) tube driving circuit |
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| CN103078613A true CN103078613A (en) | 2013-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012105840054A Pending CN103078613A (en) | 2012-12-28 | 2012-12-28 | MOS (metal oxide semiconductor) tube driving circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253558A (en) * | 2013-06-25 | 2014-12-31 | 成都昊地科技有限责任公司 | A power inverter of a wind power generator |
| CN110211526A (en) * | 2018-12-07 | 2019-09-06 | 华帝股份有限公司 | LED matrix display and scanning driving method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202268860U (en) * | 2011-09-16 | 2012-06-06 | 天水七四九电子有限公司 | Driving pulse signal delay circuit |
| WO2012087320A1 (en) * | 2010-12-22 | 2012-06-28 | Hewlett-Packard Development Company, L.P. | Mosfet switch gate driver, mosfet switch system and method |
| CN203352551U (en) * | 2012-12-31 | 2013-12-18 | 惠州市经典照明电器有限公司 | MOS tube drive circuit |
-
2012
- 2012-12-28 CN CN2012105840054A patent/CN103078613A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012087320A1 (en) * | 2010-12-22 | 2012-06-28 | Hewlett-Packard Development Company, L.P. | Mosfet switch gate driver, mosfet switch system and method |
| CN202268860U (en) * | 2011-09-16 | 2012-06-06 | 天水七四九电子有限公司 | Driving pulse signal delay circuit |
| CN203352551U (en) * | 2012-12-31 | 2013-12-18 | 惠州市经典照明电器有限公司 | MOS tube drive circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253558A (en) * | 2013-06-25 | 2014-12-31 | 成都昊地科技有限责任公司 | A power inverter of a wind power generator |
| CN110211526A (en) * | 2018-12-07 | 2019-09-06 | 华帝股份有限公司 | LED matrix display and scanning driving method |
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Application publication date: 20130501 |