CN103078601B - A kind of metal adhesive method for quartz wafer - Google Patents
A kind of metal adhesive method for quartz wafer Download PDFInfo
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- CN103078601B CN103078601B CN201210585797.7A CN201210585797A CN103078601B CN 103078601 B CN103078601 B CN 103078601B CN 201210585797 A CN201210585797 A CN 201210585797A CN 103078601 B CN103078601 B CN 103078601B
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- quartz wafer
- pedestal
- bonding agent
- bonding
- cleaning fluid
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Abstract
The invention discloses a kind of metal adhesive method for quartz wafer, the method comprises the steps: to prepare bonding agent; Sticky object is treated in cleaning; Bonding: by dry after pedestal put be fixed on heater fixed station on and be heated 300-340 DEG C; By microscopic examination, with clamping device clamping bonding agent and be placed on described pedestal treat abutting edge, melt after bonding agent contact pedestal; By microscopic examination, clamp quartz wafer with clamping device and be placed on the bonding agent place of having melted of pedestal, repeatedly moving quartz wafer and friction between quartz wafer with bonding agent is fully contacted to the two; After friction terminates, the fixed station of pedestal from heater is taken off, naturally cool to until pedestal and after room temperature, to complete the bonding of quartz wafer and pedestal.Described method can avoid bonding after the phenomenons such as virtual connection appears in quartz wafer, adhesive strength is not enough and come off, thus stability and the reliability of quartz-crystal resonator performance can be ensured.
Description
Technical field
The present invention relates to metal adhesive technical field, particularly a kind of metal adhesive method for quartz wafer.
Background technology
Quartz-crystal resonator generally comprises electroded quartz wafer, pedestal and shell, and the bonding realization wherein by bonding agent between quartz wafer with pedestal connects.After quartz wafer and pedestal realize connecting by bonding agent bonding, pedestal for support and fixing quartz wafer, and for realizing the electrical connection between quartz wafer and pedestal.Realized the vibration of quartz wafer by peripheral circuit, make quartz wafer produce frequency of oscillation, thus make quartz wafer can be used as frequency source use.
At present, be conducting resinl for common bonding agent bonding between quartz wafer with pedestal, its main component is silver powder and resin.Being liquid before conducting resinl solidification, is solid-state after solidification.During use, the conductive glue of liquid state is treated abutting edge at quartz wafer, cool after baking-curing namely complete bonding.Due in conducting resinl containing resinous principle, it is lower and can not resistant to elevated temperatures shortcoming to there is adhesive strength in the quartz wafer after bonding, and after long term storage, conducting resinl may ftracture.Above-mentioned shortcoming seriously constrains the scope of application of the quartz-crystal resonator containing quartz wafer, useful life and performance reliability thereof.In addition, above-mentioned employing conducting resinl is comparatively slow as the adhering speed of the adhering method of bonding agent, and needs hot setting.
Metal adhesive method is using a kind of Novel bonding method of metal alloy compositions as bonding agent, and the method realizes by the fusing of metal alloy compositions and cooling the connection that two are treated sticky object, thus reaches bonding object.With adopt conducting resinl as bonding agent adhering method compared with, the bonding agent used in metal adhesive method is not containing the Non-metallic components such as resin, and its bonding agent is metal alloy compositions completely, thus can eliminate the impact of Non-metallic components in bonding agent.Therefore, it is higher and can resistant to elevated temperatures advantage that metal adhesive method has adhesive strength, and not easy to crack after long term storage.
But, conventional metal adhesive method not to be suitable in quartz-crystal resonator between quartz wafer with pedestal bonding.Adopt the phenomenons such as virtual connection easily appears in the bonding quartz wafer of metal adhesive method, adhesive strength is not enough and come off, cause that quartz-crystal resonator cannot vibrate, resistance large or failure of oscillation, thus affect stability and the reliability of quartz-crystal resonator performance.
Be starved of a kind of metal adhesive method for quartz wafer.
Summary of the invention
The object of this invention is to provide a kind of metal adhesive method for quartz wafer.
Metal adhesive method for quartz wafer provided by the invention comprises the steps:
Prepare bonding agent: the material of bonding agent is gold-tin alloy, wherein the mass percent of gold is 80%, and the mass percent of tin is 20%;
Sticky object is treated in cleaning: will treat that sticky object quartz wafer and pedestal immerse in acid cleaning fluid also with Ultrasonic Cleaning 1-2 minute; After Ultrasonic Cleaning, the container holding described quartz wafer, described pedestal and described cleaning fluid is heated to the boiling of described cleaning fluid, then naturally cools to room temperature; After being cooled to room temperature, the described cleaning fluid in described container is poured out, in described container, then add sodium hydroxide solution neutralize to make the residual described cleaning fluid of itself and described quartz wafer and described base-plates surface; With the distilled water seethed with excitement or deionized water, described quartz wafer and described pedestal are rinsed well, then described quartz wafer and described pedestal absolute ethyl alcohol are dewatered, then dried;
Bonding: by dry after described pedestal put be fixed on heater fixed station on and be heated 300-340 DEG C; By microscopic examination, with clamping device clamping bonding agent and be placed on described pedestal treat abutting edge, bonding agent melts after contacting described pedestal; By microscopic examination, clamp described quartz wafer with clamping device and be placed on the bonding agent place of having melted of described pedestal, repeatedly moving described quartz wafer and make described quartz wafer and rub between bonding agent to the two fully to contact; After friction terminates, the fixed station of described pedestal from described heater is taken off, naturally cool to until described pedestal and after room temperature, to complete the bonding of described quartz wafer and described pedestal.
Preferably, described cleaning fluid is the mixed solution of potassium bichromate, water and the concentrated sulfuric acid.
Preferably, the mixed proportion potassium bichromate of potassium bichromate, water and the concentrated sulfuric acid in described cleaning fluid: water: the concentrated sulfuric acid is 1g:5ml:25ml.
Preferably, the number of times rubbed between described quartz wafer and bonding agent is 12-50 time.
The present invention has following beneficial effect:
(1) with adopt conducting resinl as bonding agent adhering method compared with, the adhering speed of described metal adhesive method is very fast, and does not need hot setting;
(2) with adopt conducting resinl as bonding agent adhering method compared with, it is higher and can resistant to elevated temperatures advantage that described metal adhesive method has adhesive strength, and can not ftracture after long term storage;
(3) described metal adhesive method can avoid bonding after the phenomenons such as virtual connection appears in quartz wafer, adhesive strength is not enough and come off, thus stability and the reliability of quartz-crystal resonator performance can be ensured.
Embodiment
Below in conjunction with embodiment, summary of the invention of the present invention is further described.
The metal adhesive method for quartz wafer that the present embodiment provides comprises the steps:
Prepare bonding agent: the material of bonding agent is gold-tin alloy, wherein the mass percent of gold is 80%, and the mass percent of tin is 20%;
Sticky object is treated in cleaning: will treat that sticky object quartz wafer and pedestal immerse in acid cleaning fluid also with Ultrasonic Cleaning 1-2 minute; After Ultrasonic Cleaning, the container holding quartz wafer, pedestal and cleaning fluid is heated to cleaning fluid boiling, then naturally cools to room temperature; After being cooled to room temperature, the cleaning fluid in container is poured out, in container, then add sodium hydroxide solution neutralize to make the residual cleaning fluid of itself and quartz wafer and base-plates surface; With the distilled water seethed with excitement or deionized water, quartz wafer and pedestal are rinsed well, then quartz wafer and pedestal absolute ethyl alcohol are dewatered, then dried;
Bonding: by dry after pedestal put be fixed on heater fixed station on and be heated 300-340 DEG C; By microscopic examination, such as hold bonding agent with inert gas suction nozzle with clamping device clamping bonding agent and be placed on pedestal treat abutting edge, bonding agent melts after contacting pedestal; By microscopic examination, clamp quartz wafer with clamping device such as tweezers and be placed on the bonding agent place of having melted of pedestal, repeatedly moving quartz wafer and friction between quartz wafer with bonding agent is fully contacted to the two; After friction terminates, the fixed station of pedestal from heater is taken off, naturally cool to until pedestal and after room temperature, to complete the bonding of quartz wafer and pedestal.
In the present embodiment, the container holding quartz wafer, pedestal and cleaning fluid adopts such as crystallising dish.In the present embodiment, cleaning fluid is the mixed solution of potassium bichromate, water and the concentrated sulfuric acid, and the mixed proportion potassium bichromate of potassium bichromate, water and the concentrated sulfuric acid: water: the concentrated sulfuric acid is such as 1g:5ml:25ml.In the present embodiment, the number of times rubbed between quartz wafer and bonding agent is such as 12-50 time.
Should be appreciated that above is illustrative and not restrictive by preferred embodiment to the detailed description that technical scheme of the present invention is carried out.Those of ordinary skill in the art can modify to the technical scheme described in embodiment on the basis of reading specification of the present invention, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (2)
1., for the metal adhesive method of quartz wafer, it is characterized in that, the method comprises the steps:
Prepare bonding agent: the material of bonding agent is gold-tin alloy, wherein the mass percent of gold is 80%, and the mass percent of tin is 20%;
Sticky object is treated in cleaning: will treat that sticky object quartz wafer and pedestal immerse in acid cleaning fluid also with Ultrasonic Cleaning 1-2 minute; After Ultrasonic Cleaning, the container holding described quartz wafer, described pedestal and described cleaning fluid is heated to the boiling of described cleaning fluid, then naturally cools to room temperature; After being cooled to room temperature, the described cleaning fluid in described container is poured out, in described container, then add sodium hydroxide solution neutralize to make the residual described cleaning fluid of itself and described quartz wafer and described base-plates surface; With the distilled water seethed with excitement or deionized water, described quartz wafer and described pedestal are rinsed well, then described quartz wafer and described pedestal absolute ethyl alcohol are dewatered, then dried;
Bonding: by dry after described pedestal put be fixed on heater fixed station on and be heated 300-340 DEG C; By microscopic examination, with clamping device clamping bonding agent and be placed on described pedestal treat abutting edge, bonding agent melts after contacting described pedestal; By microscopic examination, clamp described quartz wafer with clamping device and be placed on the bonding agent place of having melted of described pedestal, repeatedly moving described quartz wafer and make described quartz wafer and rub between bonding agent to the two fully to contact; After friction terminates, the fixed station of described pedestal from described heater is taken off, naturally cool to until described pedestal and after room temperature, to complete the bonding of described quartz wafer and described pedestal;
Described cleaning fluid is the mixed solution of potassium bichromate, water and the concentrated sulfuric acid;
The mixed proportion potassium bichromate of potassium bichromate, water and the concentrated sulfuric acid in described cleaning fluid: water: the concentrated sulfuric acid is 1g:5ml:25ml.
2. the metal adhesive method for quartz wafer according to claim 1, is characterized in that, the number of times rubbed between described quartz wafer and bonding agent is 12-50 time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210585797.7A CN103078601B (en) | 2012-12-28 | 2012-12-28 | A kind of metal adhesive method for quartz wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210585797.7A CN103078601B (en) | 2012-12-28 | 2012-12-28 | A kind of metal adhesive method for quartz wafer |
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| CN103078601A CN103078601A (en) | 2013-05-01 |
| CN103078601B true CN103078601B (en) | 2016-02-24 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104506154A (en) * | 2014-12-11 | 2015-04-08 | 廊坊中电熊猫晶体科技有限公司 | Conductive adhesive curing design method for improving frequency stability of quartz crystal resonator |
| CN107508570A (en) * | 2017-09-01 | 2017-12-22 | 北京无线电计量测试研究所 | A kind of adhering method for quartz wafer |
| CN110296896A (en) * | 2019-07-02 | 2019-10-01 | 北京无线电计量测试研究所 | A kind of device for the test of component threadiness exit stretching-resisting bending-resisting |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0531985A1 (en) * | 1991-09-12 | 1993-03-17 | Matsushita Electric Industrial Co., Ltd. | Electro-acoustic hybrid integrated circuit and manufacturing method thereof |
| CN2814673Y (en) * | 2005-08-15 | 2006-09-06 | 天津工业大学 | Inverted welding packaging structure with low-fusing point large area convex point |
| CN101695696A (en) * | 2009-09-23 | 2010-04-21 | 镇江市港南电子有限公司 | Method for cleaning silicon chip |
-
2012
- 2012-12-28 CN CN201210585797.7A patent/CN103078601B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0531985A1 (en) * | 1991-09-12 | 1993-03-17 | Matsushita Electric Industrial Co., Ltd. | Electro-acoustic hybrid integrated circuit and manufacturing method thereof |
| CN2814673Y (en) * | 2005-08-15 | 2006-09-06 | 天津工业大学 | Inverted welding packaging structure with low-fusing point large area convex point |
| CN101695696A (en) * | 2009-09-23 | 2010-04-21 | 镇江市港南电子有限公司 | Method for cleaning silicon chip |
Non-Patent Citations (2)
| Title |
|---|
| 蓝宝石晶片表面净化技术研究;周海等;《电子机械工程》;20051231;第21卷(第6期);42-44页 * |
| 金锡焊料及其在电子器件封装领域中的应用;周涛等;《电子与封装》;20050831;第5卷(第8期);5-8页 * |
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