CN103074668A - Device and method for growing large-size high-temperature crystal by horizontal temperature gradient method - Google Patents
Device and method for growing large-size high-temperature crystal by horizontal temperature gradient method Download PDFInfo
- Publication number
- CN103074668A CN103074668A CN2013100098185A CN201310009818A CN103074668A CN 103074668 A CN103074668 A CN 103074668A CN 2013100098185 A CN2013100098185 A CN 2013100098185A CN 201310009818 A CN201310009818 A CN 201310009818A CN 103074668 A CN103074668 A CN 103074668A
- Authority
- CN
- China
- Prior art keywords
- heating element
- gradient
- growth
- temperature
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a device and a method for growing a large-size high-temperature crystal by a horizontal temperature gradient method. A left warm-keeping cover and a right warm-keeping cover are arranged at a left end part and a right end part of a surrounding warm-keeping cylinder; a crucible is arranged in the center of the inside of the surrounding warm-keeping cylinder; a crucible supporting rod is fixed at a bottom end part of a crucible supporting base; a left growing gradient providing heating element is arranged on the left warm-keeping cover, and a right growing gradient providing heating element is arranged on the right warm-keeping cover; a cylindrical high-temperature environment providing heating element is arranged on the wall of the surrounding warm-keeping cylinder; the outside of the crucible is sleeved with the cylindrical high-temperature environment providing heating element; the surrounding warm-keeping cylinder is penetrated, and a plurality of first thermocouples are arranged from left to right at intervals on the cylinder side wall of the cylindrical high-temperature environment providing heating element uniformly; and the left warm-keeping cover is penetrated, and a plurality of second thermocouples are arranged from top to bottom at intervals in a central position of the left growing gradient providing heating element. According to the method and the device, real-time controlled regulation for axial and radial temperature gradients of a temperature field of the whole horizontal temperature gradient method can be achieved truly, so that the high-quality single crystal is obtained.
Description
Technical field
The present invention relates to semiconductor material and field of crystal growth, the invention discloses a kind of crystal growing apparatus, the invention also discloses a kind of method of using crystal growing apparatus to carry out horizontal temperature gradient method growing crystal.
Background technology
At present, high-temperature oxide or crystal of fluoride growth method mainly contain crystal pulling method, heat-exchanging method, falling crucible method and temperature gradient method etc.
One, crystal pulling method in invention in 1918, so claim again " Czoncharlski method ", is called for short the CZ method by Czochralski, is to utilize seed crystal pulling growth from melt to go out the method for crystal, and this method is a topmost method by the melt growth monocrystalline.Containing the material of melting in the heated crucible, seed rod from top to bottom inserts melt with seed crystal, because near the melt the solid-liquid interface is kept certain condensate depression, melt along the seed crystal crystallization, and grows into bar-like single crystal with the gradually rising of seed crystal, crucible can be by high-frequency induction or resistive heating.
The advantage of the method is:
1, in process of growth, can observe easily the upgrowth situation of crystal;
2, crystal does not contact with crucible in the growth of bath surface place, can reduce significantly the stress of crystal, prevents the parasitic nucleation of sidewall of crucible;
3, can use easily oriented seed and " necking down " technique, the dislocation of " necking down " rear seed crystal is greatly reduced, the dislocation desity of growing crystal after the reduction shouldering, thus improve perfection of crystal;
4, control accurately crystalline growth velocity.
The shortcoming of the method is:
1, under the equal crucible condition, crystal is less, and diameter is no more than crucible 50%;
2, because gradient is larger, the projection that growth interface is undue, thermal stresses is large, the dislocation increment causes that dislocation desity is excessive, and monocrystalline is bad;
3, thermograde is large, and energy consumption is high.
Two, heat-exchanging method (being called for short the HEM method) is a kind of crystal technique of inventing for the growing large-size crystal.Schmid in 1970 and Viechnicki at first use heat-exchanging method to grow the sapphire crystal of bulk.Its principle is to utilize heat exchanger to take away heat, so that form the longitudinal temperature gradient of a cold lower part and hot upper part in the crystal vitellarium, and simultaneously again by gas flow (He cooling source) in the control heat exchanger
Size and the height that changes heating power control this thermograde, reach whereby in the crucible molten soup by the lower purpose that slowly upwards is frozen into crystal.
The advantage of the method is:
1, temperature gradient distribution is opposite with gravity field, the neither movement of crucible, crystal and heat exchanger, and crystal growth interface is stable, machinery-free disturbance, buoyancy convection current are little, has eliminated the lattice defect that causes owing to mechanical movement;
2, still remain on the hot-zone after the crystal growth, the control helium gas flow can make temperature slowly evenly be reduced by Tc, realizes in-situ annealing, reduces thermal stresses and the defectives such as consequent crystal cleavage and dislocation of crystal;
3, under the equal crucible condition, can acquire the macrocrystal of crucible diameter about 90%.
The shortcoming of the method is:
1, appointed condition require high, whole complex process, the crystal growth cycle is long, need a large amount of helium make refrigerant, cost is high;
2, temperature gradient distribution is opposite with gravity field, is unfavorable for impurities removal;
3, crystal contacts with crucible, and the stress of crystal is large, and easy parasitic nucleation causes polycrystalline;
4, the crystal growth can not be controlled and observe in real time;
5, growth interface excess convexity, thermal stresses and dislocation are excessive.
Three, falling crucible method (Bridgman-stockbarger method) is that a vertical crucible of placing is descended gradually, makes it pass through a temperature gradient zone (height bends down on the temperature), and melt solidifies from bottom to top.By relatively moving between crucible and the melt, form certain temperature field, make the crystal growth.The crystallization forward position that thermograde forms is excessively cold to be the motivating force of keeping the crystal growth.Use point end crucible can successfully obtain monocrystalline, also can place seed crystal in crucible bottom.To use close crucible for volatile materials.
The advantage of the method is:
1, crucible seals, and can produce the crystal of volatile matter;
2, composition is easy to control;
3, but growing large-size monocrystalline under the equal crucible condition can arrive 90% diameter;
4, crystal growth interface dimpling, comparatively desirable near planar interface;
5, can accurately control crystalline growth velocity.
The shortcoming of the method is:
The material that 1, should not be used for negative thermal expansion coefficient, and fluid density is greater than the material of solid density;
2, because the crucible effect forms stress, parasitic nucleation and pollution easily;
3, be not easy to observe;
4, there is mechanical disturbance in descending mechanism.
Four, temperature gradient method (being called for short the TGT method) claims again guiding warm terraced method, is the melt single crystal method of inducing with oriented seed, is that China Shanghai ray machine institute Crystal study chamber is in a kind of method for monocrystal growth of the nineties invention in latter stage.Its device adopts molybdenum crucible, graphite heater, and there is a seed slot at the crucible bottom center, avoids seed crystal to be melted when material.The temperature field is provided jointly by graphite heater and refrigerating unit.Heating element is slit into the cylinder of the wavy lath power circuit of rectangle for groove about the quilt, on the graphite electrode plate that whole cylinder is installed in water cooled electrode links to each other.The lath first half punches according to certain rules, makes to cause from top to bottom after its energising with regulation heating resistance to be close to the linear temperature difference.And the heating element Lower Half temperature difference is created by the conduction of graphite heater and water cooled electrode plate.
The advantage of the method:
Thermograde was opposite with gravity direction when 1, crystal was grown, and crucible, crystal and heating element are mobile, the melt eddy current that this has just been avoided thermal convection and mechanical movement to produce;
2, after the crystal growth, surrounded by melt, still be in the hot-zone.So just can control its speed of cooling, reduce thermal stresses;
When 3, crystal was grown, solid-liquid interface was among the melt encirclement.The thermal perturbation of bath surface and mechanical disturbance can be reduced by melt so that eliminate before arriving solid-liquid interface like this.
The shortcoming of the method:
1, temperature gradient distribution is opposite with gravity field, is unfavorable for impurities removal;
2, crystal contacts with crucible, and the stress of crystal is large, and easy parasitic nucleation causes polycrystalline;
3, the crystal growth can not be controlled and observe in real time;
4, growth interface excess convexity, thermal stresses and dislocation are excessive.
Summary of the invention
One of purpose of the present invention is to overcome the deficiencies in the prior art, and a kind of simple and reliable crystal growing apparatus strong with controllability is provided.
Another object of the present invention provides a kind of method of using above-mentioned crystal growing apparatus growing crystal.
According to technical scheme provided by the invention, the device of described horizontal temperature gradient method growing crystal, it comprises a growth furnace, be provided with in growth furnace and vacuumize interface, insulated tank around in growth furnace, being provided with, around the left part of heat-preservation cylinder be provided with left stay-warm case, around the right part of heat-preservation cylinder be provided with right stay-warm case, around the inside center position of insulated tank be provided with crucible, crucible be shaped as truncated cone-shaped, below crucible, be provided with the crucible bracket, crucible is placed on the crucible bracket, be fixed with the crucible pressure pin in the bottom of crucible bracket, be provided with left growth gradient at left stay-warm case heating element is provided, left growth gradient provides heating element to be arranged on the right-hand of left stay-warm case, be provided with right growth gradient at right stay-warm case heating element is provided, right growth gradient provides heating element to be arranged on the left of right stay-warm case, around the cylinder sidewall of heat-preservation cylinder be provided with the round shape hot environment heating element be provided, the round shape hot environment provides heating element to be enclosed within the outside of crucible, and the round shape hot environment provides heating element, left growth gradient provides heating element, right growth gradient provides heating element all to be coaxial setting with crucible, heat-preservation cylinder and provide in the round shape hot environment on the cylinder sidewall of heating element from left to right evenly that the interval arranges several the first thermopairs around passing, pass left stay-warm case and left growth gradient provide on the heating element central position from top to down evenly the interval several the second thermopairs are set.
The method of using said apparatus to carry out growing crystal comprises the steps:
A, raw material is packed in the crucible, be evacuated to 1.0 * 10 in the growth furnace
-3~ 1.0 * 10
-4Behind the Pa, the round shape hot environment provides the heating element energising, heats up with 2 ~ 5 kilowatts/hour speed and heats;
B, utilize the radial symmetry gradient of the whole temperature of the first thermocouple measurement, utilize the axial-temperature gradient of the whole temperature of the second thermocouple measurement field;
C, when the first thermocouple measuring temperature reaches than low 200 ~ 300 ℃ of the fusing point of crystal, stop the intensification that the round shape hot environment provides heating element, starting left growth gradient provides heating element and right growth gradient that heating element is provided;
D, left growth gradient provide heating element and right growth gradient to provide heating element to continue heating with the speed of 0.5 ~ 1 kilowatt/hour and 1 ~ 2 kilowatt/hour respectively, are the fusing point of raw material until be positioned at the measurement temperature of first thermopair on the left side;
E, according to the reading of the first thermopair and the second thermopair judge the temperature thermograde, in the constant situation of the first thermocouple measuring temperature that remains in the left side, adjusting the round shape hot environment provides heating element, left growth gradient to provide heating element and right growth gradient that the relative power ratio of heating element is provided, regulate axial, the radial symmetry gradient of temperature field, until be fit to the growth of crystal;
F, with whole temperature axially and radial symmetry gradient be adjusted to the optimum value constant temperature 3 ~ 6 hours that is fit to the crystal growth, reducing simultaneously left growth gradient with 100 ~ 300 watts/hour speed provides heating element and right growth gradient that the power of heating element is provided, so that crystal growth interface slowly equably to the right growth gradient provide the heating element direction to pass, until be positioned at the fusing point that first thermocouple measuring temperature on the right side is lower than crystal;
After the growth of g, crystal is complete, adjust the relative heating power that left growth gradient provides heating element and right growth gradient that heating element is provided, it is zero making the thermograde of the minimum or whole temperature of the temperature-difference field of the first thermopair and the second thermocouple measurement;
H, the power that provides heating element, left growth gradient to provide heating element and right growth gradient that heating element is provided with 300 ~ 500 watts of/hour same rates reduction round shape hot environments simultaneously, the in-situ annealing of realization crystal.
The present invention has following advantage:
1, horizontal temperature gradient method of the present invention adopts the round shape hot environment to provide heating element, left growth gradient to provide heating element and right growth gradient to provide heating element 3 heating elements, can really accomplish real-time controllable adjustment to the axial and radial symmetry gradient of whole temperature field by the temperature of thermocouple measurement, can regulate the temperature ladder of whole temperature field to be fit to the growth of crystal, obtain high-quality monocrystalline;
2, operation is simple and reliable, controllability is strong for horizontal temperature method device provided by the present invention;
3, still remain on the hot-zone after the crystal growth, adjusting left growth gradient provides heating element and right growth gradient that the relative heating power of heating element is provided, can further reduce thermograde in the stove, even thermograde in the stove can be adjusted into zero, it is uniform temperature field, therefore can effectively realize in-situ annealing, reduce thermal stresses and the defectives such as consequent crystal cleavage and dislocation of crystal.
Description of drawings
Fig. 1 is structural representation of the present invention.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As shown in the figure: the device of this Novel horizontal Growth by Temperature Gradient Technique crystal, comprise a growth furnace, be provided with in growth furnace and vacuumize interface, be provided with in growth furnace and vacuumize interface, insulated tank 301 around in growth furnace, being provided with, around the left part of heat-preservation cylinder 301 be provided with left stay-warm case 311, around the right part of heat-preservation cylinder 301 be provided with right stay-warm case 312, around the inside center position of insulated tank 301 be provided with crucible 401, below crucible 401, be provided with crucible bracket 501, crucible 401 is placed on the crucible bracket 501, be fixed with crucible pressure pin 601 in the bottom of crucible bracket 501, be provided with left growth gradient at left stay-warm case 311 heating element 211 is provided, left growth gradient provides heating element 211 to be arranged on the right-hand of left stay-warm case 311, be provided with right growth gradient at right stay-warm case 312 heating element 212 is provided, right growth gradient provides heating element 212 to be arranged on the left of right stay-warm case 312, around the cylinder sidewall of heat-preservation cylinder 301 be provided with the round shape hot environment heating element 201 be provided, the round shape hot environment provides heating element 201 to be enclosed within the outside of crucible 401, and the round shape hot environment provides heating element 201, left growth gradient provides heating element 211, right growth gradient provides heating element 212 all to be coaxial setting with crucible 401, heat-preservation cylinder 301 and provide in the round shape hot environment on the cylinder sidewall of heating element 201 from left to right evenly that the interval arranges several the first thermopairs 101 around passing, pass left stay-warm case 311 and left growth gradient provide on the heating element 211 central position from top to down evenly the interval several the second thermopairs 111 are set.
Embodiment 1
The thermograde control method is when carrying out the growth of YAG crystal with said apparatus:
Measure temperature and the round shape hot environment provides in the constant situation of heating element 201 power at the first thermopair 101 that remains in the left side, the power of heating element 211 is provided by improving left growth gradient, and reduce the power that right growth gradient provides heating element 212, can reduce radial symmetry gradient;
Measure temperature and the round shape hot environment provides in the constant situation of heating element 201 power at the first thermopair 101 that remains in the left side, the power of heating element 211 is provided by reducing left growth gradient, and improve the power that right growth gradient provides heating element 212, can improve radial symmetry gradient;
Measure in the temperature-resistant situation at the first thermopair 101 that remains in the left side, improving the round shape hot environment provides heating element 201 power, and suitably reduce simultaneously left growth gradient and provide heating element 211 and right growth gradient that the power of heating element 212 is provided, can reduce axial-temperature gradient;
Measure in the temperature-resistant situation at the first thermopair 101 that remains in the left side, reducing the round shape hot environment provides heating element 201 power, and suitably improve simultaneously left growth gradient and provide heating element 211 and right growth gradient that the power of heating element 212 is provided, can improve axial-temperature gradient.
Its molybdenum crucible 401 processed is of a size of φ 200mm * 80mm, puts into YAG raw material 10Kg in crucible 401; Open vacuum system to the growth furnace pumping high vacuum, when vacuum tightness is 1 * 10
-3Behind the Pa, hot environment provides heating element 201 energisings, and temperature rise rate is 2 ~ 4 kilowatts/hour; When the first thermopair 101 measurement temperature reach 1650 ℃, stopping hot environment providing the intensification of heating element 201, starting left growth gradient provides heating element 211, right growth gradient to provide heating element 212 to continue to heat up, it is 0.5 ~ 0.7 kilowatt/hour that left growth gradient provides heating element 211 temperature rise rates, it is 1 ~ 1.5 kilowatt/hour that right growth gradient provides heating element 212 temperature rise rates, reaches 1950 ℃ until be positioned at the measurement temperature of first thermopair 101 on the left side; Measure in the temperature-resistant situation at the first thermopair 101 that remains in the left side, the relative power that hot environment provides heating element 201 and left growth gradient to provide heating element 211, right growth gradient that heating element 212 is provided is provided, is made the optimum value that axially reaches the growth of YAG crystal with radially warm ladder of its whole temperature field; Constant temperature 3 ~ 4h provides heating element 211, right growth gradient that the power of heating element 212 is provided with the left growth gradient of 100 ~ 200 watts/hour rate reduction, is lower than 1950 ℃ until be positioned at the measurement temperature of first thermopair 101 on the right side; After crystal structure finishes, the power that regulating left growth gradient provides heating element 211, right growth gradient that heating element 212 is provided is adjusted into zero with thermograde in the stove, namely uniform warm, reduce the power that hot environment provides heating element 201, left growth gradient to provide heating element 211 and right growth gradient that heating element 212 is provided with 300 ~ 400 watts of/hour same rates, realize the in-situ annealing of YAG crystal.
Through test with detect proof: the YAG crystal of the present invention's growth has large size, dislocation desity is low, thermal stresses is little and the characteristics such as good uniformity.
Embodiment 2
The thermograde control method is when carrying out sapphire crystal growth with said apparatus:
Measure temperature and the round shape hot environment provides in the constant situation of heating element 201 power at the first thermopair 101 that remains in the left side, the power of heating element 211 is provided by improving left growth gradient, and reduce the power that right growth gradient provides heating element 212, can reduce radial symmetry gradient;
Measure temperature and the round shape hot environment provides in the constant situation of heating element 201 power at the first thermopair 101 that remains in the left side, the power of heating element 211 is provided by reducing left growth gradient, and improve the power that right growth gradient provides heating element 212, can improve radial symmetry gradient;
Measure in the temperature-resistant situation at the first thermopair 101 that remains in the left side, improving the round shape hot environment provides heating element 201 power, and suitably reduce simultaneously left growth gradient and provide heating element 211 and right growth gradient that the power of heating element 212 is provided, can reduce axial-temperature gradient;
Measure in the temperature-resistant situation at the first thermopair 101 that remains in the left side, reducing the round shape hot environment provides heating element 201 power, and suitably improve simultaneously left growth gradient and provide heating element 211 and right growth gradient that the power of heating element 212 is provided, can improve axial-temperature gradient.
Its molybdenum crucible 401 processed is of a size of φ 400mm * 160mm, puts into alumina raw material 40Kg in crucible 401; Open vacuum system to the growth furnace pumping high vacuum, when vacuum tightness is 1.0 * 10
-3~ 1.0 * 10
-4Behind the Pa, hot environment provides heating element 201 energisings, and temperature rise rate is 3 ~ 5 kilowatts/hour; When the first thermopair 101 measurement temperature reach 1850 ℃, stopping hot environment providing the intensification of heating element 201, starting left growth gradient provides heating element 211, right growth gradient to provide heating element 212 to continue to heat up, it is 0.7 ~ 1 kilowatt/hour that left growth gradient provides heating element 211 temperature rise rates, it is 1.5 ~ 2 kilowatts/hour that right growth gradient provides heating element 212 temperature rise rates, reaches 2050 ℃ until be positioned at the measurement temperature of first thermopair 101 on the left side; Measure in the temperature-resistant situation at the first thermopair 101 that remains in the left side, the relative power that hot environment provides heating element 201 and left growth gradient to provide heating element 211, right growth gradient that heating element 212 is provided is provided, is made the optimum value that axially reaches sapphire crystal growth with radially warm ladder of its whole temperature field; Constant temperature 5 ~ 6h provides heating element 211, right growth gradient that the power of heating element 212 is provided with the left growth gradient of 200 ~ 300 watts/hour rate reduction, is lower than 2050 ℃ until be positioned at the measurement temperature of first thermopair 101 on the right side; After crystal structure finishes, the power that regulating left growth gradient provides heating element 211, right growth gradient that heating element 212 is provided is adjusted into zero with thermograde in the stove, namely uniform warm, reduce the power that hot environment provides heating element 201, left growth gradient to provide heating element 211 and right growth gradient that heating element 212 is provided with 400 ~ 500 watts of/hour same rates, realize the in-situ annealing of sapphire crystal.
Through test with detect proof: the sapphire crystal of the present invention's growth has large size, dislocation desity is low, thermal stresses is little and the characteristics such as good uniformity.
Claims (2)
1. the device of a horizontal temperature gradient method growing large-size high temperature crystal, it is characterized in that: comprise a growth furnace, be provided with in growth furnace and vacuumize interface, heat-preservation cylinder (301) around in growth furnace, being provided with, around the left part of heat-preservation cylinder (301) be provided with left stay-warm case (311), around the right part of heat-preservation cylinder (301) be provided with right stay-warm case (312), around the inside center position of heat-preservation cylinder (301) be provided with crucible (401), crucible (401) be shaped as truncated cone-shaped, be provided with crucible bracket (601) in the below of crucible (401), crucible (401) is placed on the crucible bracket (601), be fixed with crucible pressure pin (611) in the bottom of crucible bracket (601), around crucible pressure pin (611) is slidingly mounted on the heat-preservation cylinder (301), be provided with left growth gradient at left stay-warm case (311) heating element (211) is provided, left growth gradient provides heating element (211) to be arranged on the right-hand of left stay-warm case (311), be provided with right growth gradient at right stay-warm case (312) heating element (212) is provided, right growth gradient provides heating element (212) to be arranged on the left of right stay-warm case (312), around the cylinder sidewall of heat-preservation cylinder (301) be provided with the round shape hot environment heating element (201) be provided, the round shape hot environment provides heating element (201) to be enclosed within the outside of crucible (401), and the round shape hot environment provides heating element (201), left growth gradient provides heating element (211), right growth gradient provides heating element (212) all to be coaxial setting with crucible (401), heat-preservation cylinder (301) and provide in the round shape hot environment on the cylinder sidewall of heating element (201) from left to right evenly that the interval arranges several the first thermopairs (101) around passing, pass left stay-warm case (311) and left growth gradient provide the upper central position of heating element (211) from top to down evenly the interval several the second thermopairs (111) are set.
2. right to use requires the method for 1 described device growing crystal to comprise the steps:
A, raw material is packed in the crucible (401), be evacuated to 1.0 * 10 in the growth furnace
-3~ 1.0 * 10
-4Behind the Pa, the round shape hot environment provides heating element (201) energising, with 2 ~ 5 kilowatts/hour speed heating;
B, utilize the first thermopair (101) to measure the radial symmetry gradient of whole temperature, utilize the second thermopair (111) to measure the axial-temperature gradient of whole temperature field;
C, when the first thermopair (101) is measured temperature and is reached than low 200 ~ 300 ℃ of the fusing point of crystal, stopping the round shape hot environment provides the intensification of heating element (201), and starting left growth gradient provides heating element (211) and right growth gradient that heating element (212) is provided;
D, left growth gradient provide heating element (211) and right growth gradient to provide heating element (212) to continue heating with the speed of 0.5 ~ 1 kilowatt/hour and 1 ~ 2 kilowatt/hour respectively, are the fusing point of raw material until be positioned at the measurement temperature of first thermopair (101) of leftmost;
E, judge the thermograde of temperature according to the reading of the first thermopair (101) and the second thermopair (111), measure in the temperature-resistant situation at the first thermopair (101) that remains in leftmost, adjusting the round shape hot environment provides heating element (201), left growth gradient to provide heating element (211) and right growth gradient that the relative power ratio of heating element (212) is provided, regulate axial, the radial symmetry gradient of temperature field, until be fit to the growth of crystal;
F, with whole temperature axially and radial symmetry gradient be adjusted to the optimum value constant temperature 3 ~ 6 hours that is fit to the crystal growth, reducing simultaneously left growth gradient with 100 ~ 300 watts/hour speed provides heating element (211) and right growth gradient that the power of heating element (212) is provided, so that crystal growth interface slowly equably to the right growth gradient provide heating element (211) direction to pass, measure the fusing point that temperature is lower than crystal until be positioned at first thermopair (101) of rightmost;
After the growth of g, crystal is complete, adjust the relative heating power that left growth gradient provides heating element (211) and right growth gradient that heating element (212) is provided, the thermograde of the minimum or whole temperature of the temperature-difference that the first thermopair (101) and the second thermopair (111) are measured field is zero;
H, the power that provides heating element (201), left growth gradient to provide heating element (211) and right growth gradient that heating element (212) are provided with 300 ~ 500 watts of/hour same rates reduction round shape hot environments simultaneously, the in-situ annealing of realization crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100098185A CN103074668A (en) | 2013-01-11 | 2013-01-11 | Device and method for growing large-size high-temperature crystal by horizontal temperature gradient method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100098185A CN103074668A (en) | 2013-01-11 | 2013-01-11 | Device and method for growing large-size high-temperature crystal by horizontal temperature gradient method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103074668A true CN103074668A (en) | 2013-05-01 |
Family
ID=48151360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013100098185A Pending CN103074668A (en) | 2013-01-11 | 2013-01-11 | Device and method for growing large-size high-temperature crystal by horizontal temperature gradient method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103074668A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154978A (en) * | 2015-10-14 | 2015-12-16 | 云南鑫耀半导体材料有限公司 | Ggalium arsenide polycrystal magnetic field growing furnace and growing method |
| CN109487330A (en) * | 2019-01-03 | 2019-03-19 | 无锡翌波晶体材料有限公司 | Crystal cross growth equipment and crystal cross growth method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004203687A (en) * | 2002-12-26 | 2004-07-22 | Hitachi Cable Ltd | Apparatus for manufacturing compound semiconductor |
| CN1623014A (en) * | 2002-03-19 | 2005-06-01 | 株式会社日矿材料 | CdTe single crystal and CdTe polycrystal, and method for preparation thereof |
| CN102597334A (en) * | 2009-09-05 | 2012-07-18 | 科里斯科技有限公司 | Method and apparatus for growing a sapphire single crystal |
| CN102677167A (en) * | 2011-03-09 | 2012-09-19 | 元亮科技有限公司 | Method and device for growing large-sized ultraviolet-level calcium fluoride monocrystal |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN102828232A (en) * | 2012-09-25 | 2012-12-19 | 倪屹 | Three-dimensional sapphire crystal growing device |
-
2013
- 2013-01-11 CN CN2013100098185A patent/CN103074668A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1623014A (en) * | 2002-03-19 | 2005-06-01 | 株式会社日矿材料 | CdTe single crystal and CdTe polycrystal, and method for preparation thereof |
| JP2004203687A (en) * | 2002-12-26 | 2004-07-22 | Hitachi Cable Ltd | Apparatus for manufacturing compound semiconductor |
| CN102597334A (en) * | 2009-09-05 | 2012-07-18 | 科里斯科技有限公司 | Method and apparatus for growing a sapphire single crystal |
| CN102677167A (en) * | 2011-03-09 | 2012-09-19 | 元亮科技有限公司 | Method and device for growing large-sized ultraviolet-level calcium fluoride monocrystal |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN102828232A (en) * | 2012-09-25 | 2012-12-19 | 倪屹 | Three-dimensional sapphire crystal growing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154978A (en) * | 2015-10-14 | 2015-12-16 | 云南鑫耀半导体材料有限公司 | Ggalium arsenide polycrystal magnetic field growing furnace and growing method |
| CN105154978B (en) * | 2015-10-14 | 2017-12-15 | 云南鑫耀半导体材料有限公司 | Gallium arsenide polycrystal magnetic field growth furnace and growing method |
| CN109487330A (en) * | 2019-01-03 | 2019-03-19 | 无锡翌波晶体材料有限公司 | Crystal cross growth equipment and crystal cross growth method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102766901B (en) | The device and method of real-time, tunable Growth by Temperature Gradient Technique large size high temperature crystal | |
| CN101962798B (en) | Method and equipment for producing sapphire single crystal | |
| CN102383187B (en) | Growth method of sapphire single crystal | |
| CN105442037A (en) | High-speed single crystal growth device | |
| CN104651935B (en) | A kind of method that crucible rise method prepares high-quality sapphire crystal | |
| CN103060901B (en) | Preparation process for growing plurality of crystals through edge-defined film-fed crystal growth method | |
| CN104651934A (en) | Energy-saving sapphire crystal growth furnace | |
| Zhang et al. | Nucleation and bulk growth control for high efficiency silicon ingot casting | |
| CN109371461A (en) | A kind of electric-resistivity method growth carborundum crystals device and method | |
| CN106319621A (en) | Large-size czochralski silicon single crystal growth method | |
| CN101220502B (en) | Vertical Bridgman growth furnace and method of optimizing temperature field inside furnace | |
| CN103255477B (en) | The growing method of a kind of shaped sapphire crystal and equipment | |
| CN104073875A (en) | Preparation method of large-size sapphire crystal dynamic temperature field | |
| CN115216831A (en) | Crystal growth device and method capable of controlling temperature gradient | |
| CN104250852A (en) | Sapphire crystal growth device and growth method | |
| CN204714946U (en) | The aluminum nitride crystal growth device that temperature field is controlled and technique | |
| CN114686963A (en) | GaAs single crystal growth equipment and GaAs single crystal growth process | |
| CN102433585B (en) | Thermal field structure of quasi-monocrystal ingot furnace | |
| CN103074668A (en) | Device and method for growing large-size high-temperature crystal by horizontal temperature gradient method | |
| CN206666673U (en) | A kind of multistation crucible declines stove | |
| CN105239153A (en) | Single crystal furnace having auxiliary material adding mechanism and application thereof | |
| CN102154683A (en) | Monocrystal/polycrystal directional solidification system of metal heating body structure | |
| CN205295534U (en) | High -speed growth of single crystal device | |
| CN203007472U (en) | Crystal growth furnace | |
| CN102677170B (en) | A kind of method and system controlling sapphire growth size |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130501 |