CN103074612A - Heating device and CVD (Chemical Vapor Deposition) equipment - Google Patents

Heating device and CVD (Chemical Vapor Deposition) equipment Download PDF

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Publication number
CN103074612A
CN103074612A CN2012105931867A CN201210593186A CN103074612A CN 103074612 A CN103074612 A CN 103074612A CN 2012105931867 A CN2012105931867 A CN 2012105931867A CN 201210593186 A CN201210593186 A CN 201210593186A CN 103074612 A CN103074612 A CN 103074612A
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China
Prior art keywords
buffer gas
gas
heating
heating unit
pallet
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CN2012105931867A
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Chinese (zh)
Inventor
乔徽
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GUANGDA PHOTOELECTRIC EQUIPMENT TECHNOLOGY (JIAXING) CO LTD
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GUANGDA PHOTOELECTRIC EQUIPMENT TECHNOLOGY (JIAXING) CO LTD
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Priority to CN2012105931867A priority Critical patent/CN103074612A/en
Publication of CN103074612A publication Critical patent/CN103074612A/en
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Abstract

The invention discloses a heating device. The heating device comprises a tray and a heater below the tray, wherein the heater comprises a plurality of heating zones and further comprises a plurality of gas-filled units; and the plurality of gas-filled units are used for respectively supplying buffer gas of which coefficients of thermal conductivity are different, for gaps between all the heating zones and the tray, so that the heat conduction capacities of buffer gas in the corresponding gaps of the heating zones are different so as to preferably adjust the temperature of the tray. In the CVD process, CVD equipment adopting the heating device can obtain a better heating effect to avoid the problem that heating in different areas on the substrate is different, thereby ensuring that the CVD process can be preferably carried out.

Description

Heating unit and chemical vapor depsotition equipment
Technical field
The present invention relates to semiconductor devices, particularly a kind of heating unit and comprise the chemical vapor depsotition equipment of this heating unit.
Background technology
At chemical vapor depsotition equipment, in for example organometallics chemical vapour deposition (Metal-organicChemical Vapor Deposition, the MOCVD) equipment, by heating unit the substrate of placing on pallet and the pallet is heated.
Please refer to Fig. 1, existing heating unit 100 comprises: pallet 1 and be positioned at the well heater 2 of described pallet 1 below, described well heater 2 comprises the heating units such as resistance wire or resistor stripe, can in the situation of energising, produce heat, with thermal-radiating form pallet 2 and the substrate that is carried on the described pallet 2 be heated.
Along with the size increase of substrate and the number of substrate increase, the size of pallet 1 increases thereupon, and correspondingly, the size of well heater 2 also increases thereupon.More even for being heated of the regional that guarantees pallet 1, prior art is divided into a plurality of heating regions with well heater 2, and the different zones of the corresponding pallet 1 of each heating region is to heat pallet 1.Such as, take the pallet 1 of circle as example, corresponding well heater 2 be shaped as circle, outside along radial direction from the center of circle of well heater 2, well heater 2 is divided into inner region 21, middle district 22 and outskirt 23 Three regions, is respectively applied to heat with the corresponding zone of top pallet 1.
When needs were adjusted the temperature distribution of regional on the pallet 1, the technician can distribute to the power of each heating region of well heater 2 and adjust (for example can be the electric current of adjusting certain resistance wire of input) and realize.
But, only rely on the power distribution and adjust the following problem that has:
1, adjusts the power of a heating region of well heater, not only can affect the zone of pallet corresponding to this heating region, also can have influence on other zones adjacent with this zone of pallet, like this when Modulating Power distributes, need to consider this heating region to the impact in other zones of pallet, adjustment process is comparatively complicated;
2, adjustment dynamics is limited, and when the temperature distribution between the pallet regional need to be done large adjustment, only Modulating Power distributed and the temperature distribution of the regional of pallet can't be adjusted to actual needs sometimes.
Therefore, be necessary the structure of heating unit is improved, can adjust flexibly the quantity of heat given up to each district of pallet, so that pallet is heated more uniformly.
Summary of the invention
The heating unit of prior art is relatively poor to the control of temperature, the invention provides a kind of heating unit and comprises the chemical vapor depsotition equipment of this heating unit, to address the above problem.
The invention provides a kind of heating unit, comprise pallet and be positioned at the well heater of described pallet below, have the gap between described pallet and the well heater, described well heater comprises a plurality of heating regions, and described a plurality of heating regions are respectively over against the different zones of described pallet; Also comprise a plurality of gas filler cells; The heat-conduction coefficient of the buffer gas that described a plurality of gas filler cells provides in the gap between each heating region of described well heater and the pallet respectively is different.
Heating unit provided by the invention, a plurality of gas filler cells have been adopted, the heat-conduction coefficient of the buffer gas that provides in the gap between each heating region of described well heater and the pallet is different, then the capacity of heat transmission of the buffer gas in the gap in corresponding different heating zone is different, the temperature of adjustment pallet that so just can be better.
The invention provides a kind of chemical vapor depsotition equipment that comprises aforesaid heating unit.Adopt the chemical vapor depsotition equipment of above-mentioned heating unit, in chemical vapor deposition processes, can obtain better heats, thereby guaranteed better the carrying out of CVD process.
Description of drawings
Fig. 1 is the structure sectional view of the heating unit of prior art;
Fig. 2 is the structure sectional view of the heating unit of embodiment of the present invention.
Embodiment
The contriver finds that through the further investigation to the prior art heating unit have buffer gas between well heater and the pallet, heat is delivered to pallet by buffer gas, and buffer gas of the prior art is nitrogen, and riddles between pallet and the well heater.So, if can change the character of buffer gas, so that along with a certain heating region, the capacity of heat transmission of adjusting the buffer gas that is arranged in this corresponding gap of heating region is suitable, just can adjust the heating to the different zones of pallet, thereby adjust the temperature of tray surface.
In view of above-mentioned analysis, please refer to Fig. 2, the invention provides a kind of heating unit 200, comprise pallet 210 and the well heater 220 that is positioned at described pallet 210 belows, has the gap between described pallet 210 and the well heater 220, the width in described gap is usually less than 10mm, and contact causes damage to pallet to avoid directly.
Described well heater 220 is divided into a plurality of heating regions, present embodiment is take round tray 210 as example, its well heater 220 also is circular, then outside along radial direction from the center of circle, well heater 220 is divided into inner region 221, middle district 222 and 223 3 heating regions of outskirt, and namely inner region 221 is border circular areas, middle district 222 is for surrounding the annular region of inner region 221, outskirt 223 is the annular region in district 222 in surrounding, and it has respectively such as resistance wire etc., is used for the corresponding zone of top pallet 210 is heated.The division of described heating region can change according to circumstances, for example diameter is that 500 millimeters pallet can be divided into above-mentioned three heating regions, the pallet that diameter is 700 millimeters then can be divided into four heating regions, perhaps according to different temperature requirements, suitable division heating region, for example can be two heating regions, also can be more, preferably, described a plurality of heating region can independently heat described pallet 210 respectively, i.e. respectively independent control and adjustment of the heating power of described a plurality of heating regions.Described heating region is preferably concentric(al) circles (ring), this is to need pallet to have relatively stably temperature of integral body for generalized case, for particular requirement is arranged, for example need the temperature in a certain zone of pallet different from other zones, then part corresponding on the well heater can be divided into separately a heating region, in order to carry out the adjustment of temperature.
Described heating unit 200 also comprises a plurality of gas filler cells 230, described a plurality of gas filler cells 230 is arranged at respectively in the different heating zone of described well heater 220, each gas filler cells 230 preferably comprises a plurality of gas blow pipes that pass institute's well heater 220, described a plurality of gas blow pipe is distributed in the corresponding heater zone of described well heater 220, concrete, in inner region 221, middle district 222 and outskirt 223, all be provided with a plurality of gas blow pipes, preferably, in each heating zone, described a plurality of gas blow pipes evenly distribute.The heat-conduction coefficient of the buffer gas that described gas blow pipe provides in the gap of the described a plurality of heating zone of correspondence is different, thereby changes the capacity of heat transmission of the buffer gas in the corresponding gap of a certain heating region, with the temperature of effective control pallet.
Described buffer gas is preferably stable in properties, is difficult for the gas that reacts with heating unit 200; For so that pass into the thermal conductivity of buffer gas to the gap in the described different heating of correspondence district not identical, can pass into different gas to the gap in the described different heating of correspondence district, described gas has different heat-conduction coefficient; Pass into the first buffer gas in the gap such as inner region 221 as described in to correspondence, in the gap in the described middle district 222 of correspondence, pass into the second buffer gas, in the gap of the described outskirt 223 of correspondence, pass into the 3rd buffer gas, wherein, the heat-conduction coefficient of the heat-conduction coefficient of the heat-conduction coefficient of described the first buffer gas<described the second buffer gas<described the 3rd buffer gas; Concrete, described the first buffer gas is ammonia (NH 3), described the second buffer gas is helium (He), described the 3rd buffer gas is hydrogen (H 2).So, the Heating temperature of 220 pairs of described pallets of described well heater, 210 edge sections is greater than the Heating temperature of described pallet 210 central zones, reaches even so that the surface temperature of described pallet 210 is easier.
Described gas filler cells 230 is connected on the gas source by airway, as the gas filler cells 230 that is positioned at inner region 221 is connected in inner region gas source 241, the gas filler cells 230 that is arranged in district 222 is connected in district's gas source 242, the gas filler cells 230 that is positioned at outskirt 223 is connected in outskirt gas source 243, and described each gas source provides buffer gas.Described each gas source also comprises controller, for example can comprise the detecting gas flow rate, shows and control the control units such as volume ratio of mixed gas, in order to composition and the flow of the buffer gas that provides are provided as required at any time.
Preferably, for so that pass into the thermal conductivity of buffer gas to gap corresponding to described different heating district not identical, can pass into the identical mixed gas of component to gap corresponding to described different heating district, but gaseous fraction content not identical.As in the present embodiment, described buffer gas can be the mixed gas that comprises the first buffer gas and the second buffer gas, and the heat-conduction coefficient of described the first buffer gas is less than the heat-conduction coefficient of described the second buffer gas.The volume ratio of the second buffer gas and the first buffer gas in the buffer gas that the volume ratio of the second buffer gas and the first buffer gas passes into greater than the gap to corresponding described middle district 222 in the buffer gas that passes into to the gap of the described outskirt 223 of correspondence, the volume ratio of the second buffer gas and the first buffer gas in the buffer gas that the volume ratio of the second buffer gas and the first buffer gas passes into greater than the gap to corresponding described inner region 221 in the buffer gas that passes into to the gap in the described middle district 222 of correspondence; Thereby the thermal losses of compensation tray edge; Reach even so that the surface temperature of described pallet 210 is easier.After well heater 220 heats for some time, if need to adjust temperature, then for example can change respectively the volume ratio of the first buffer gas and the second buffer gas in the gap of the described outskirt 223 of correspondence, described middle district 222 or described inner region 221, thus the capacity of heat transmission of the buffer gas in the gap of the corresponding a certain heating region of suitable change.Concrete, described the first buffer gas is nitrogen (N 2), described the second buffer gas is hydrogen; Because edge's temperature of pallet 210 is than the easier reduction of the temperature of central zone, buffer gas is hydrogen in the gap of the described outskirt 223 of correspondence so buffer gas is distributed as, buffer gas is nitrogen in the gap of the described inner region 221 of correspondence, the buffer gas that passes in the gap in the described middle district 222 of correspondence then is the mixed gas of nitrogen and hydrogen, this can be at outskirt gas source 243 places access hydrogen, at inner region gas source 241 places access nitrogen, and at middle district gas source 242 places access hydrogen and nitrogen, and mix according to needed ratio, then the gas blow pipe by gas filler cells 230 is released to buffer gas in the described gap.Owing to regulate the capacity of heat transmission by the component concentration of regulating the buffer gas that component is identical in gap corresponding to each heating zone, can reduce the use of cushion gas body source, reduce cost.Described the first buffer gas can be nitrogen, and described the second buffer gas can also helium or argon gas (Ar).
Need to prove, although buffer gas is different in the gap of corresponding each heating region, the mixing process that gas is inevitably arranged, yet buffer gas continues to pass into, so although this mixing process is occuring, but can't produce substantial impact, still can keep the corresponding buffer gas of higher degree in the gap of corresponding each heating region.
Based on the described heating unit of above-mentioned embodiment, can obtain a chemical vapor depsotition equipment, for example can be MOCVD equipment, concrete, heating unit in the existing installation can be replaced with heating unit of the present invention, and make accommodation, such as arranging of gas source etc.So, by heating unit of the present invention, just can be so that MOCVD equipment can reach satisfactory temperature (or temperature range) in 200 ℃ ~ 1500 ℃ temperature range when substrate is heated, thereby so that the growth of epitaxy technique is controlled effectively, obtain rete up to specification.
Heating unit of the present invention can also be useful in other equipment that need to use similar heating unit, and the present invention is not construed as limiting this.
In sum, heating unit provided by the invention, a plurality of gas filler cells have been adopted, the heat-conduction coefficient of the buffer gas that provides in the gap between each heating region of described well heater and the pallet is different, by adjusting the composition of described buffer gas, so that the volume ratio of each buffer gas is not identical in the gap in corresponding different heating zone, then the capacity of heat transmission of the buffer gas in the gap in corresponding different heating zone is different, the temperature of adjustment pallet that so just can be better.Comprise the chemical vapor depsotition equipment of this heating unit in chemical vapor deposition processes, can obtain better heats, avoided the different problem of different zones heating to substrate, thereby guaranteed better the carrying out of CVD process.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.

Claims (11)

1. heating unit comprises pallet and is positioned at the well heater of described pallet below that have the gap between described pallet and the well heater, described well heater comprises a plurality of heating regions, and described a plurality of heating regions are respectively over against the different zones of described pallet; It is characterized in that, also comprise a plurality of gas filler cells; The heat-conduction coefficient of the buffer gas that described a plurality of gas filler cells provides in the gap between each heating region of described well heater and the pallet respectively is different.
2. heating unit as claimed in claim 1 is characterized in that, described each gas filler cells comprises a plurality of gas blow pipes that pass institute's well heater, and described a plurality of gas blow pipes are evenly distributed in the corresponding heater area of described well heater.
3. heating unit as claimed in claim 1 is characterized in that, described well heater is resistance heater.
4. heating unit as claimed in claim 1 is characterized in that, described a plurality of heating regions are independent respectively to be heated described pallet.
5. heating unit as claimed in claim 1, it is characterized in that, described buffer gas comprises the first buffer gas and the second buffer gas at least, the heat-conduction coefficient of described the first buffer gas is less than the heat-conduction coefficient of the second buffer gas, and the first buffer gas in the buffer gas that described a plurality of gas filler cells provide respectively to described gap is not identical with the volume ratio of the second buffer gas.
6. heating unit as claimed in claim 5 is characterized in that, described a plurality of heating regions are respectively inner region, around the middle district of described inner region with around the outskirt in described middle district.
7. heating unit as claimed in claim 6, it is characterized in that, the volume ratio of the second buffer gas and the first buffer gas is greater than the volume ratio of the second buffer gas in the gap in corresponding described middle district and the first buffer gas in the gap of corresponding described outskirt, and the volume ratio of the second buffer gas and the first buffer gas is greater than the volume ratio of the second buffer gas in the gap of corresponding described inner region and the first buffer gas in the gap in the described middle district of correspondence.
8. such as the described heating unit of claim 5 to 7, it is characterized in that described the first buffer gas is nitrogen, described the second buffer gas is hydrogen.
9. such as the described heating unit of claim 5 to 7, it is characterized in that described the first buffer gas is nitrogen, described the second buffer gas is helium or argon gas.
10. heating unit as claimed in claim 1 is characterized in that, described gap is less than or equal to 10mm.
11. a chemical vapor depsotition equipment is characterized in that, comprises such as the described heating unit of any one in the claim 1 ~ 10.
CN2012105931867A 2012-12-29 2012-12-29 Heating device and CVD (Chemical Vapor Deposition) equipment Pending CN103074612A (en)

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN108254232A (en) * 2017-12-29 2018-07-06 新冶高科技集团有限公司 A kind of high throughput thermally isopressing device and method suitable for material genome plan
CN114196944A (en) * 2020-09-17 2022-03-18 中微半导体设备(上海)股份有限公司 Chemical vapor deposition device and substrate temperature control method
CN115505897A (en) * 2022-09-22 2022-12-23 江苏第三代半导体研究院有限公司 Rotating disc type reactor for preparing epitaxial wafer, preparation method and application

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Publication number Priority date Publication date Assignee Title
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CN115505897A (en) * 2022-09-22 2022-12-23 江苏第三代半导体研究院有限公司 Rotating disc type reactor for preparing epitaxial wafer, preparation method and application
CN115505897B (en) * 2022-09-22 2023-10-31 江苏第三代半导体研究院有限公司 Turntable type reactor for preparing epitaxial wafer, preparation method and application

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Application publication date: 20130501