CN103074612A - Heating device and CVD (Chemical Vapor Deposition) equipment - Google Patents

Heating device and CVD (Chemical Vapor Deposition) equipment Download PDF

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CN103074612A
CN103074612A CN2012105931867A CN201210593186A CN103074612A CN 103074612 A CN103074612 A CN 103074612A CN 2012105931867 A CN2012105931867 A CN 2012105931867A CN 201210593186 A CN201210593186 A CN 201210593186A CN 103074612 A CN103074612 A CN 103074612A
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buffer gas
gas
heating
tray
plurality
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CN2012105931867A
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Chinese (zh)
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乔徽
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光达光电设备科技(嘉兴)有限公司
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Priority to CN2012105931867A priority Critical patent/CN103074612A/en
Publication of CN103074612A publication Critical patent/CN103074612A/en

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Abstract

The invention discloses a heating device. The heating device comprises a tray and a heater below the tray, wherein the heater comprises a plurality of heating zones and further comprises a plurality of gas-filled units; and the plurality of gas-filled units are used for respectively supplying buffer gas of which coefficients of thermal conductivity are different, for gaps between all the heating zones and the tray, so that the heat conduction capacities of buffer gas in the corresponding gaps of the heating zones are different so as to preferably adjust the temperature of the tray. In the CVD process, CVD equipment adopting the heating device can obtain a better heating effect to avoid the problem that heating in different areas on the substrate is different, thereby ensuring that the CVD process can be preferably carried out.

Description

加热装置及化学气相沉积设备 Heating means and a chemical vapor deposition apparatus

技术领域 FIELD

[0001] 本发明涉及半导体设备,特别是一种加热装置及包括该加热装置的化学气相沉积设备。 [0001] The present invention relates to semiconductor devices, and more particularly to a heating apparatus comprising a chemical vapor deposition apparatus of the heating apparatus.

背景技术 Background technique

[0002] 在化学气相沉积设备,例如金属有机化合物化学气相沉积(Metal-organicChemical Vapor Deposition,MOCVD)设备中,通过加热装置对托盘和托盘上放置的衬底进行加热。 [0002] In a chemical vapor deposition apparatus, such as a metal organic chemical vapor deposition (Metal-organicChemical Vapor Deposition, MOCVD) apparatus, heating the substrate placed on the pallet and pallet by the heating means.

[0003] 请参考图1,现有的加热装置100包括:托盘I及位于所述托盘I下方的加热器2,所述加热器2包括电阻丝或电阻条等加热单元,能够在通电的情况下产生热量,以热辐射的形式对托盘2和承载于所述托盘2上的衬底进行加热。 [0003] Please refer to FIG 1, the conventional heating apparatus 100 includes: a tray located at the tray I and I beneath the heater 2, the heater unit 2 comprises a resistive heating wire or resistance strips, can be energized in the case of under heat, the heat radiation in the form of a tray 2 on the substrate and the carrier on the tray 2 the heating.

[0004] 随着衬底的尺寸增大和衬底的数目增多,托盘I的尺寸随之增大,相应地,加热器2的尺寸也随之增大。 [0004] As the number and size of the substrate the substrate is increased, the size of the tray I increases, correspondingly, the size of the heater 2 is also increased. 为了保证托盘I的各个区域的受热更为均匀,现有技术将加热器2分为多个加热区域,每一加热区域对应托盘I的不同区域,以对托盘I进行加热。 In order to ensure that the heated region of the respective tray I is more uniform, the prior art heater 2 is divided into a plurality of heating regions, each corresponding to different regions of the tray heating zone I, I to heat the tray. 比如,以圆形的托盘I为例,对应的加热器2的形状为圆形,自加热器2的圆心沿半径方向向外,加热器2被分为内区21、中区22和外区23三个区域,分别用于与上方托盘I的对应区域进行加热。 For example, a circular tray I, for example, the shape of the heater 2 having a circular, center from a radial direction outwardly of the heater 2, 21, 22 in the zone and the outer zone 2 is divided into the heater zone three regions 23, respectively, for heating a corresponding zone of the upper tray I.

[0005] 当需要调整托盘I上各个区域的温度分布时,技术人员可以对加热器2的各个加热区域的功率分布进行调整(例如可以是调整输入某电阻丝的电流)来实现。 [0005] When the need to adjust the temperature of each region on the tray I distribution can be adjusted in the art (e.g., may be a resistance wire to adjust the input current) to achieve the power distribution of each heating zone of the heater 2.

[0006] 但是,仅仅依赖功率分布调整会有以下问题: [0007]1、调整加热器的一个加热区域的功率,不仅仅会影响该加热区域对应的托盘的区域,也会影响到托盘的与该区域相邻的其他区域,这样在调整功率分布时,需要考虑该加热区域对托盘其他区域的影响,调整过程较为复杂; [0006] However, the power distribution depends only on the adjustment will have the following problems: [0007] 1, to adjust the heater power to a heating zone, it will not only affect the area of ​​the tray corresponding to the heating region, and will also affect the tray other regions of the adjacent region, so that when adjusting the power distribution, the need to consider the heating zone of the tray to other regions, the adjustment process is complicated;

[0008] 2、调整力度有限,当托盘各个区域之间的温度分布需要做大的调整时,有时仅仅调整功率分布无法将托盘的各个区域的温度分布调整至实际需要。 [0008] 2, to adjust the intensity is limited, when the temperature distribution between the individual regions need big adjustment trays, sometimes simply adjusting the temperature of each region of the power distribution tray can not be adjusted to the actual needs distribution.

[0009] 因此,有必要对加热装置的结构进行改进,使其能够灵活调整对托盘各区的输出热量,使得对托盘更为均匀的加热。 [0009] Accordingly, it is necessary to improve the structure of the heating device, it is possible to flexibly adjust the heat output tray districts, so that more uniform heating of the tray.

发明内容 SUMMARY

[0010] 现有技术的加热装置对温度的控制较差,本发明提供一种加热装置及包括该加热装置的化学气相沉积设备,以解决上述问题。 [0010] The prior art heating apparatus of poor temperature control, the present invention provides a heating apparatus and a chemical vapor deposition apparatus that includes a heating means, in order to solve the above problems.

[0011] 本发明提供一种加热装置,包括托盘和位于所述托盘下方的加热器,所述托盘和加热器之间具有间隙,所述加热器包括多个加热区域,所述多个加热区域分别正对所述托盘的不同区域;还包括多个气体填充单元;所述多个气体填充单元分别向所述加热器的各个加热区域与托盘之间的间隙中提供的缓冲气体的热传导系数不同。 [0011] The present invention provides a heating apparatus comprising a heater and a tray located below the tray, with a gap between the tray and the heater, said heater comprising a plurality of heating regions, said plurality of heating zones each of n different regions of the tray; further comprising a plurality of gas-filled cells; different coefficient of thermal conductivity of the gas in the gas filling the plurality of buffer units each provided in a gap between the respective heating zone of the heater tray .

[0012] 本发明提供的加热装置,采用了多个气体填充单元,向所述加热器的各个加热区域与托盘之间的间隙中提供的缓冲气体的热传导系数不同,则在对应不同加热区域的间隙中的缓冲气体的导热能力不同,这样就能够较佳的调整托盘的温度。 [0012] The present invention provides a heating apparatus, using a plurality of gas-filled units, different thermal conductivity coefficients to provide a gap between the tray and the respective heating zone of the heater to the buffer gas, the corresponding regions of different heating different thermal conductivity of the buffer gas in the gap, so it can adjust the temperature of the tray is preferred.

[0013] 本发明提供一种包含如上所述的加热装置的化学气相沉积设备。 [0013] The present invention provides a chemical vapor deposition apparatus comprising a heating apparatus as described above. 采用上述加热装置的化学气相沉积设备,在化学气相沉积过程中,能够获得更好的加热效果,从而保证了CVD过程较佳的进行。 Using the heating means of a chemical vapor deposition apparatus, a chemical vapor deposition process, better heating effect can be obtained, thus ensuring the CVD process is preferred.

附图说明 BRIEF DESCRIPTION

[0014] 图1为现有技术的加热装置的结构剖视图; Structure [0014] FIG. 1 is a prior art heating apparatus sectional view;

[0015] 图2为本发明实施方式的加热装置的结构剖视图。 Structure [0015] FIG. 2 embodiment heating apparatus of the embodiment of the present invention, the cross-sectional view.

具体实施方式 Detailed ways

[0016] 发明人经过对现有技术加热装置的深入研究发现,加热器和托盘之间具有缓冲气体,热量通过缓冲气体传递到托盘,现有技术中的缓冲气体为氮气,且充满于托盘和加热器之间。 [0016] The inventors have intensively studied to find prior art heating device, having a buffer gas between the heater and the tray, the heat transfer through a buffer gas into the tray, the prior art buffer gas is nitrogen, and is filled in the tray and between the heater. 那么,若能够改变缓冲气体的性质,使得随着某一加热区域,调整位于该加热区域所对应的间隙中的缓冲气体的导热能力适,就可以调整对托盘的不同区域的加热,从而调整托盘表面的温度。 Then, if it can change the nature of the buffer gas, such as a heating zone suitable to adjust the thermal conductivity of the gap located in the region corresponding to the heating of the buffer gas, the heating can be adjusted for different areas of the tray, thereby adjusting the tray surface temperature.

[0017] 鉴于上述分析,请参考图2,本发明提供一种加热装置200,包括托盘210和位于所述托盘210下方的加热器220,所述托盘210和加热器220之间具有间隙,所述间隙的宽度通常小于10_,以避免直接接触对托盘造成损坏。 [0017] In view of the above analysis, refer to FIG. 2, the present invention provides a heating apparatus 200, 210 includes a tray and a heater 210 is located below the tray 220, the tray 210 and having a gap between the heater 220, the the width of said gap is typically less than 10_, to avoid direct contact damage to the tray.

[0018] 所述加热器220分为多个加热区域,本实施方式以圆形托盘210为例,其加热器220也为圆形,则从圆心沿半径方向向外,加热器220被分为内区221、中区222和外区223三个加热区域,即内区221为圆形区域,中区222为包围内区221的环形区域,外区223为包围中区222的环形区域,其分别具有例如电阻丝等,用于对上方托盘210的对应区域进行加热。 [0018] The heater 220 is divided into a plurality of heating regions, according to the present embodiment, a circular tray 210 for example, the heater 220 is also circular, radially outward direction from the center, the heater 220 is divided into three heating zones 223 within the area 221, the area and the outer area 222, i.e., inner zone 221 is a circular region, the region 222 is an annular region surrounding the inner region 221, an outer annular region 223 to 222 in the region surrounding the region, which each having a resistance wire and the like, for example, for a corresponding region above the tray 210 is heated. 所述加热区域的划分可视情况而变动,例如直径为500毫米的托盘可分为上述三个加热区域,而直径700毫米的托盘则可分为四个加热区域,或者根据不同的温度要求,适当的划分加热区域,例如可以是两个加热区域,也可以是更多,优选的,所述多个加热区域可以分别独立对所述托盘210进行加热,即所述多个加热区域的加热功率分别独立控制和调整。 Optionally heating the divided region fluctuates, for example, having a diameter of 500 mm above the tray can be divided into three zones, and the tray 700 mm diameter can be divided into four heating region, or depending on the temperature requirements, appropriate division of the heated region, the heated region may be two for example, may be more, preferably, said plurality of heating regions may each independently heating the tray 210, i.e., the heating power of the plurality of heating zones are independently controlled and adjusted. 所述加热区域优选为同心圆(环),这是针对一般情况需要托盘具有整体相对平稳的温度,对于有着特殊要求的,例如需要托盘的某一区域的温度与其他区域不同,则可将加热器上对应的部分单独划分为一个加热区域,以便进行温度的调整。 The heating zone is preferably a concentric (ring), which is required for the entire tray has relatively stable temperature for the general case, with special requirements, such as the temperature of a region of the tray needs different from other areas, may be heated corresponding to the upper portion is divided into a separate heating zone for adjusting the temperature.

[0019] 所述加热装置200还包括多个气体填充单元230,所述多个气体填充单元230分别设置于所述加热器220的不同加热区域中,每个气体填充单元230优选的包括多个穿过所加热器220的吹气管,所述多个吹气管分布在所述加热器220的对应加热器区中,具体的,在内区221、中区222及外区223中皆设置有多个吹气管,优选的,在每一个加热区中,所述多个吹气管均匀分布。 [0019] The heating apparatus 200 further includes a plurality of gas-filled cells 230, a plurality of gas-filled cells 230 are disposed in the different heating areas of the heater 220, each of the gas filling unit 230 preferably comprises a plurality of blowing tube 220 passes through the heater, a plurality of blow tubes distributed in the corresponding area of ​​the heater in the heater 220, specifically, the inner region 221, the region 222 and the outer region 223 are provided with a plurality a blowing tube, preferably, in each heating zone, the blowing tube plurality of uniformly distributed. 所述吹气管向对应所述多个加热区的间隙中提供的缓冲气体的热传导系数不同,从而改变在某一加热区域所对应的间隙中的缓冲气体的导热能力,以有效的控制托盘的温度。 Buffer gas different from the blowing tube to provide a gap corresponding to said plurality of heating zones in the coefficient of thermal conductivity, thereby changing the heat capacity of the heating zone at a gap corresponding to the buffer gas, to effectively control the temperature of the tray .

[0020] 所述缓冲气体优选为性质稳定,不易与加热装置200发生反应的气体;为使得向对应所述不同加热区的间隙通入缓冲气体的导热系数不相同,可以向对应所述不同加热区的间隙通入不同的气体,所述气体具有不同的热传导系数;如向对应所述内区221的间隙中通入第一缓冲气体,向对应所述中区222的间隙中通入第二缓冲气体,向对应所述外区223的间隙中通入第三缓冲气体,其中,所述第一缓冲气体的热传导系数〈所述第二缓冲气体的热传导系数〈所述第三缓冲气体的热传导系数;具体的,所述第一缓冲气体为氨气(NH3),所述第二缓冲气体为氦气(He),所述第三缓冲气体为氢气(H2)。 [0020] The buffer gas is preferably stable, easy gas 200 reacts with the heating means; such as to correspond to the gap into different heating zones of the thermal conductivity of the buffer gas are different, can be said to correspond to different heating the gap region into a different gas, the gas having a different thermal conductivity; the first buffer gas into the gap corresponding to the inner region 221 to the corresponding region in the gap 222 into the second buffer gas, into the gap corresponding to the outer region 223 of the third buffer gas, wherein the first buffer gas thermal conductivity of <the second thermal conductivity of the buffer gas <said third buffer gas heat conduction coefficient; specifically, the first buffer gas is ammonia (NH3), the second buffer gas is helium (He), the third buffer gas is hydrogen (H2). 如此,所述加热器220对所述托盘210边缘部分的加热温度要大于所述托盘210中心区域的加热温度,使得所述托盘210的表面温度更易达到均匀。 Thus, the heating temperature of the heater 210 edge portion 220 of the tray is greater than the heating temperature of the central region of the tray 210, such that the surface temperature of the tray 210 to achieve more uniform.

[0021] 所述气体填充单元230通过导气管连接在气体源上,如位于内区221的气体填充单元230连接于内区气体源241,位于中区222的气体填充单元230连接于中区气体源242,位于外区223的气体填充单元230连接于外区气体源243,所述各个气体源提供缓冲气体。 [0021] The gas filling unit 230 is connected through a gas supply on the airway, such as in the region of the gas filling unit 221 connected to the gas source 230 within the region 241, 222 located in the region of the gas filling unit 230 connected to the gas in region source 242, 223 is located outside the region of the gas filling unit 230 is connected to an outer gas source region 243, the gas source provides a respective buffer gas. 所述各个气体源还包括控制器,例如可以包括侦测气体流速,显示并控制混合气体的体积比等控制单元,以便根据需要随时控制所提供的缓冲气体的成分和流量。 The respective gas source further includes a controller, for example, may include a gas flow rate detection, display and control a volume ratio of the mixed gas and the like the control unit, according to the composition and flow rate of the buffer gas required, control is provided.

·[0022] 优选的,为使得向所述不同加热区对应的间隙通入缓冲气体的导热系数不相同,可以向所述不同加热区对应的间隙通入组分相同的混合气体,但气体组分的的含量不相同。 * [0022] Preferably, the gap is such that the thermal conductivity of the gas introduced into the buffer corresponding to the different heating zones are not the same, may correspond to the different heating zones through the gap into the mixed gas of the same composition, but the gas components content points are not the same. 如在本实施例中,所述缓冲气体可以是包括第一缓冲气体和第二缓冲气体的混合气体,所述第一缓冲气体的热传导系数小于所述第二缓冲气体的热传导系数。 As in the present embodiment, the buffer gas may be a gas comprising a first buffer and second buffer gas mixture gas, thermal conductivity of the first buffer gas is less than the second thermal conductivity of the buffer gas. 向对应所述外区223的间隙通入的缓冲气体中第二缓冲气体与第一缓冲气体的体积比大于向对应所述中区222的间隙通入的缓冲气体中第二缓冲气体与第一缓冲气体的体积比,向对应所述中区222的间隙通入的缓冲气体中第二缓冲气体与第一缓冲气体的体积比大于向对应所述内区221的间隙通入的缓冲气体中第二缓冲气体与第一缓冲气体的体积比;从而补偿托盘边缘的热损耗;使得所述托盘210的表面温度更易达到均匀。 Corresponds to the outer region of the gap 223 into the second volume of the buffer gas in a first buffer gas and the buffer gas in the region corresponding to the gap 222 into the buffer gas is greater than the first and second buffer gas the volume ratio of the buffer gas, to the corresponding region in the gap 222 into the second volume of the buffer gas in a first buffer gas and the buffer gas into the gap region 221 corresponding to the through buffer gas is greater than the first two buffer gas to volume ratio of the first buffer gas; edge of the tray so as to compensate the heat loss; tray 210 such that the surface temperature more homogeneous. 当加热器220加热一段时间后,若需要对温度进行调整,则例如可以分别改变在对应所述外区223、所述中区222或所述内区221的间隙中第一缓冲气体和第二缓冲气体的体积比,从而适当的改变对应某一加热区域的间隙中的缓冲气体的导热能力。 When the heater 220 for a time, if necessary to adjust the temperature, for example, it may be changed corresponding to the outer zone 223, 222 or a gap in the inner region of the first zone 221 and second buffer gas the volume ratio of the buffer gas, and thus appropriately changed corresponding to the thermal conductivity of the buffer gas in a heating region of the gap. 具体的,所述第一缓冲气体为氮气(N2),所述第二缓冲气体为氢气;由于托盘210的边缘处温度比中心区域的温度更容易降低,故缓冲气体分布为在对应所述外区223的间隙中缓冲气体为氢气,在对应所述内区221的间隙中缓冲气体为氮气,而在对应所述中区222的间隙中通入的缓冲气体则是氮气和氢气的混合气体,这可以在外区气体源243处接入氢气,在内区气体源241处接入氮气,而在中区气体源242处接入氢气和氮气,并按照所需要的比例混合均匀,然后通过气体填充单元230的吹气管将缓冲气体释放于所述间隙中。 Specifically, the first buffer gas is nitrogen (N2 of), the second buffer gas is hydrogen; the temperature of the tray 210 since the edge more easily reduced than the temperature of the central region, so that the corresponding buffer gas distribution in the outer the gap region 223 of the buffer gas is hydrogen, the corresponding gap in the buffer region 221 is a nitrogen gas, and the corresponding gap 222 into the buffer gas region in the mixed gas of nitrogen and hydrogen, this may be a gas source 243 at the outer region of the hydrogen access, including access region 241 at the source of nitrogen gas, and the gas source in the access region 242 of hydrogen and nitrogen, and mixed according to the desired proportions, then by filling the gas blowing tube unit 230 to release buffer gas in the gap. 由于通过调节各个加热区对应的间隙中组分相同的缓冲气体的组分含量来调节导热能力,可以减少缓冲气体源的使用,降低成本。 Since the gap by adjusting the content of the respective components in the heating region corresponding to the gas component of the same buffer to adjust the thermal conductivity can be reduced using a buffer gas source and reduce costs. 所述第一缓冲气体可以是氮气,所述第二缓冲气体还可以氦气或氩气(Ar)。 The first buffer gas can be nitrogen, the second buffer gas is helium or argon may also be (Ar).

[0023] 需要说明的是,虽然在对应各个加热区域的间隙中缓冲气体不同,不可避免的有着气体的混合过程,然而缓冲气体是持续通入的,故尽管这种混合过程在发生,但是并不会产生实质性的影响,对应每个加热区域的间隙中依然能够维持较高纯度的相应的缓冲气体。 [0023] Incidentally, although each corresponding to a different buffer gas in the heating zone of clearance, the inevitable mixing with the gas, however, the buffer gas is continuously fed, so although this mixing process occurs, and however It does not have a substantial impact, a gap corresponding to each heating zone can be maintained in the corresponding buffer still higher purity gas.

[0024] 基于上述实施方式所述的加热装置,可以得到一化学气相沉积设备,例如可以是MOCVD设备,具体的,可以将现有设备中的加热装置替换为本发明的加热装置,并作适应性调整,例如气体源的设置等。 [0024] Based on the above-described embodiment, the heating apparatus can be obtained a chemical vapor deposition apparatus, for example, a MOCVD equipment, specifically, the heating means may be replaced with a heating apparatus of the present invention in conventional equipment, and for adaptation adjustments, such as setting a gas source, and the like. 那么,通过本发明的加热装置,就能够使得MOCVD设备在对衬底进行加热时在200°C〜1500°C的温度范围内能够达到符合要求的温度(或温度范围),从而使得外延工艺的生长得到有效的控制,获取符合规格的膜层。 Then, by the heating device according to the present invention, it is possible that the MOCVD apparatus when the substrate is heated in the temperature range of 200 ° C~1500 ° C to achieve satisfactory temperature (or temperature range), so that the epitaxial process growth has been effectively controlled, get in line with the specifications of the film.

[0025] 本发明的加热装置还可以适用在其他需要用到类似加热装置的设备中,本发明对此不作限定。 [0025] The heating apparatus according to the present invention may also be applied in other similar devices need to use a heating apparatus, the present invention is not limited to this.

[0026] 综上所述,本发明提供的加热装置,采用了多个气体填充单元,向所述加热器的各个加热区域与托盘之间的间隙中提供的缓冲气体的热传导系数不同,通过调整所述缓冲气体的成分,使得在对应不同加热区域的间隙中各个缓冲气体的体积比不相同,则在对应不同加热区域的间隙中的缓冲气体的导热能力不同,这样就能够较佳的调整托盘的温度。 [0026] In summary, the present invention provides a heating apparatus, using a plurality of gas-filled units, different thermal conductivity coefficients to provide a gap between each of the heating regions of the tray heater buffer gas, by adjusting the the components of the buffer gas, so that a gap corresponding to different regions of the heating gas than the volume of each buffer are not the same, then the thermal conductivity of the gap corresponding to the different areas of different heating the buffer gas, so that the tray can be suitably adjusted temperature. 包含该加热装置的化学气相沉积设备在化学气相沉积过程中,能够获得更好的加热效果,避免了对衬底的不同区域加热不同的问题,从而保证了CVD过程较佳的进行。 The chemical vapor deposition apparatus comprising a heating means in a chemical vapor deposition process, the heating effect can be better avoided between different areas of the substrate heating problem, thus ensuring the CVD process is preferred.

[0027] 显然,本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。 [0027] Obviously, those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. 这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包括这些改动和变型在内。 Thus, if these modifications and variations of the present invention fall within the claims of the invention and the scope of equivalents thereof, the present invention is also intended to include such modifications and variations.

Claims (11)

1.一种加热装置,包括托盘和位于所述托盘下方的加热器,所述托盘和加热器之间具有间隙,所述加热器包括多个加热区域,所述多个加热区域分别正对所述托盘的不同区域;其特征在于,还包括多个气体填充单元;所述多个气体填充单元分别向所述加热器的各个加热区域与托盘之间的间隙中提供的缓冲气体的热传导系数不同。 1. A heating apparatus comprising a heater and a tray located below the tray, with a gap between the tray and the heater, said heater comprising a plurality of heating regions, each of said plurality of heating regions of the n different regions of said tray; characterized by, further comprising a plurality of gas-filled cells; different coefficient of thermal conductivity of the plurality of units are respectively provided gas filling the gap between the respective heating zone of the heater in the tray buffer gas .
2.如权利要求1所述的加热装置,其特征在于,所述每个气体填充单元包括多个穿过所加热器的吹气管,所述多个吹气管均匀分布在所述加热器的对应加热器区域中。 2 corresponds to the heating apparatus as claimed in claim 1, wherein each of the gas filling unit includes a blowing tube through the plurality of heaters, a plurality of uniformly distributed in the gas blow pipe heater a heater area.
3.如权利要求1所述的加热装置,其特征在于,所述加热器为电阻加热器。 The heating apparatus as claimed in claim 1, wherein said heater is a resistive heater.
4.如权利要求1所述的加热装置,其特征在于,所述多个加热区域分别独立对所述托盘进行加热。 4. The heating apparatus according to claim 1, wherein said plurality of heating regions of the tray are independently heated.
5.如权利要求1所述的加热装置,其特征在于,所述缓冲气体至少包括第一缓冲气体和第二缓冲气体,所述第一缓冲气体的热传导系数小于第二缓冲气体的热传导系数,所述多个气体填充单元向所述间隙分别提供的缓冲气体中的第一缓冲气体和第二缓冲气体的体积比不相同。 5. The heating apparatus according to claim 1, wherein said buffer gas comprises at least a first and a second buffer gas is a buffer gas, the thermal conductivity of the first buffer gas is less than the thermal conductivity of the second buffer gas, the volume of the plurality of buffer gas to the gas filling means are provided in the gap of the first and second buffer gas are different than the buffer gas.
6.如权利要求5所述的加热装置,其特征在于,所述多个加热区域分别为内区、围绕所述内区的中区和围绕所述中区的外区。 6. The heating apparatus according to claim 5, wherein said plurality of heating regions, respectively an inner zone surrounding the inner zone and outer zone surrounding said intermediate region.
7.如权利要求6所述的加热装置,其特征在于,对应所述外区的间隙中第二缓冲气体与第一缓冲气体的体积比大于对应所述中区的间隙中第二缓冲气体与第一缓冲气体的体积比,对应所述中区的间隙中第二缓冲气体与第一缓冲气体的体积比大于对应所述内区的间隙中第二缓冲气体与第一缓冲气体的体积比`。 7. The heating apparatus according to claim 6, characterized in that a gap corresponding to the outer region of the second buffer gas from the first volume of the buffer gas in the region corresponding to the gap in the second buffer gas is greater than the ratio of the volume ratio of the first buffer gas in the gap region corresponding to the volume of the second buffer gas from the first buffer gas is greater than the gap corresponds to the inner volume of the second region in the first buffer gas and buffer gas ratio ` .
8.如权利要求5至7所述的加热装置,其特征在于,所述第一缓冲气体为氮气,所述第二缓冲气体为氢气。 5 to 8. The heating apparatus according to claim 7, wherein the first buffer gas is nitrogen, the second buffer gas is hydrogen.
9.如权利要求5至7所述的加热装置,其特征在于,所述第一缓冲气体为氮气,所述第二缓冲气体为氦气或氩气。 5 to 9. The heating apparatus according to claim 7, wherein the first buffer gas is nitrogen, the second buffer gas is helium or argon.
10.如权利要求1所述的加热装置,其特征在于,所述间隙小于等于10_。 10. The heating apparatus according to claim 1, wherein said gap is less than or equal 10_.
11.一种化学气相沉积设备,其特征在于,包含如权利要求f 10中任意一项所述的加热装置。 A chemical vapor deposition apparatus, wherein, as claimed in claim f 10 comprising heating apparatus according to any one.
CN2012105931867A 2012-12-29 2012-12-29 Heating device and CVD (Chemical Vapor Deposition) equipment CN103074612A (en)

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