CN103066968A - Level restorer used in transmission pipe selector - Google Patents
Level restorer used in transmission pipe selector Download PDFInfo
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- CN103066968A CN103066968A CN2011103174815A CN201110317481A CN103066968A CN 103066968 A CN103066968 A CN 103066968A CN 2011103174815 A CN2011103174815 A CN 2011103174815A CN 201110317481 A CN201110317481 A CN 201110317481A CN 103066968 A CN103066968 A CN 103066968A
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- pipe
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Abstract
The invention discloses a level restorer used in a transmission pipe selector and relates to the integrated circuit technology. When the selector is formed by a one grade or N grade NMOS transmission pipe, the level restorer is formed by one NMOS pipe and one PMOS pipe. A drain electrode of the PMOS pipe is connected to an output terminal of the selector and a source electrode is connected to a power supply terminal vdd. The drain electrode of the NMOS pipe is connected with a grid electrode of the PMOS pipe. The source electrode is connected to a power supply terminal gnd and the grid electrode is connected to the output terminal of the selector. A circuit in the invention ensures that the output terminal of the selector is not a floating level when the selector does not work and the level is drawn to a high level through a PMOS upward pulling pipe of the level restorer so as to avoid generation of a static state short circuit current of a gate circuit connected to the output terminal. When the selector works and when an output signal of the transmission pipe selector generates decrease of a threshold, the level restorer is ensured to carry out rapid upward pulling and the generation of the static state short circuit current is avoided. Circuit area cost of the invention is small. The static state short circuit current is eliminated and simultaneously circuit performance is increased.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of structural design of high speed circuit is a kind of level restorer for the transfer tube selector.
Background technology
The MOS transfer tube has changes of threshold when transmission high level or low level, for single NMOS pipe, during the transmission high level, output voltage is vdd-vth to the maximum; For single PMOS pipe, during the transmission low level, the output voltage minimum is vth, for the next stage cmos circuit, when prime NMOS pipe transmission high level, or during PMOS pipe transmission low level, PMOS pipe and the NMOS pipe of cmos circuit can be in conducting state simultaneously, thereby produce a short circuit current, this short circuit current has increased the quiescent dissipation of chip.
The level restorer of existing solution is shown in the X72 of Fig. 7, this circuit adds the upper trombone slide of a PMOS by an inverter and forms (Jan M.Rabaey, AnanthaChandrakasan, Borivoje Nikolic, digital integrated circuit--design perspective, the .274-275.2004 of publishing house of Tsing-Hua University), but the back need to add an inverter X73 (logic that guarantees signal is constant), can not lose efficacy in order to ensure the selector circuit function, upper trombone slide is generally made down than pipe, when selector circuit is not worked, can make selector output end move high level to by level restorer, but owing to adopt than pipe, on draw the time longer, thereby the generation power consumption.If but the output of selector driving is gate circuit, we just need to add a level restorer (shown in the X82 of Fig. 8) at non-transmission path, also can increase time-delay in the time of area increased.
Summary of the invention
The objective of the invention is to propose a kind of level restorer for the transfer tube selector, to overcome the deficiencies in the prior art, it can eliminate the changes of threshold of transfer tube output voltage fast, thereby reduces the time-delay of circuit.
For achieving the above object, technical solution of the present invention is:
A kind of level restorer for the transfer tube selector comprises: the selector circuit that one-level or N level NMOS transfer tube form; It also comprises a level restorer; Level restorer comprises a NMOS pipe and a PMOS pipe, and the drain electrode of PMOS pipe is connected on the output of selector, source class meets power end vdd, the leakage level of NMOS pipe and the grid of PMOS pipe join, and the NMOS tube source grade meets power end gnd, and grid connects the output of selector.
Described level restorer for the transfer tube selector, the NMOS pipe in its described level restorer, after the grid leak of NMOS pipe itself linked to each other, the grid with the PMOS pipe joined again, and the NMOS tube source grade meets power end gnd.
Described level restorer for the transfer tube selector, its described level restorer, comprise a NMOS pipe and two PMOS pipes, the drain electrode of the one PMOS pipe is connected on the output of selector, and source class meets power end vdd, after the grid leak of NMOS pipe itself links to each other, grid with a PMOS pipe joins again, the NMOS tube source grade meets power end gnd, links to each other with the grid of NMOS pipe after the grid leak of the 2nd PMOS pipe itself is joined, and the 2nd PMOS tube source grade meets power end vdd.
A kind of level restorer for the transfer tube selector comprises: the selector circuit that one-level or N level PMOS transfer tube form; It also comprises a level restorer; Level restorer comprises a NMOS pipe and a PMOS pipe, and the drain electrode of NMOS pipe is connected on the output of selector, source class meets power end gnd, the leakage level of PMOS pipe and the grid of NMOS pipe join, and the PMOS tube source grade meets power end vdd, and grid connects the output of selector.
Described level restorer for the transfer tube selector, the PMOS pipe in its described level restorer, after the grid leak of PMOS pipe itself linked to each other, the grid with the NMOS pipe joined again, and the PMOS tube source grade meets power end vdd.
Described level restorer for the transfer tube selector, its described level restorer, comprise two NMOS pipes and a PMOS pipe, the drain electrode of the one NMOS pipe is connected on the output of selector, source class meets power end gnd, and the grid with a NMOS pipe after the grid leak of PMOS pipe itself links to each other joins, and the PMOS tube source grade meets power end vdd, link to each other with the grid of PMOS pipe after the grid leak of the 2nd NMOS pipe itself is joined, the 2nd NMOS tube source grade meets power end gnd.
Circuit of the present invention beneficial effect compared with prior art is: when the transfer tube selector circuit is not worked, this level restorer can be extremely fast places fixed level with the output of selector, draw on having reduced to a great extent or the drop-down time, reduced quiescent dissipation, when selector circuit is worked, level restorer can be eliminated the changes of threshold of transfer tube output voltage fast, thereby reduces the time-delay of short circuit current and circuit; Compare with traditional level restorer, level resume speed of the present invention is faster, so that the time-delay of selector is less, and going for working as post-stage drive circuit is the situation of gate circuit, and traditional level restorer on draw or lower trombone slide must utilize a feedback loop across an inverter, when post-stage drive circuit is gate circuit, just need to add one-level inverter and a metal-oxide-semiconductor at non-transmission path, also can increase time-delay in the time of area increased.
Description of drawings
Fig. 1 is a kind of level restorer embodiment 1 schematic diagram for the transfer tube selector of the present invention, is the selector circuit that forms for the NMOS pipe;
Fig. 2 is a kind of level restorer embodiment 2 schematic diagrames for the transfer tube selector of the present invention, is the selector circuit that forms for the NMOS pipe;
Fig. 3 is a kind of level restorer embodiment 3 schematic diagrames for the transfer tube selector of the present invention, is the selector circuit that forms for the NMOS pipe;
Fig. 4 is a kind of level restorer embodiment 4 schematic diagrames for the transfer tube selector of the present invention, is the selector circuit that forms for the PMOS pipe;
Fig. 5 is a kind of level restorer embodiment 5 schematic diagrames for the transfer tube selector of the present invention, is the selector circuit that forms for the PMOS pipe;
Fig. 6 is a kind of level restorer embodiment 6 schematic diagrames for the transfer tube selector of the present invention, is the selector circuit that forms for the PMOS pipe;
Fig. 7 is the existing level restorer that is used for the selector circuit of NMOS pipe composition;
When Fig. 8 is gate circuit for driving when output, the level restorer of the selector circuit that the existing NMOS of being used for pipe forms.
Embodiment
A kind of level restorer for the transfer tube selector of the present invention, wherein level restorer has following several implementation:
(1) a kind of level restorer of managing the selector circuit that forms for NMOS, level restorer is comprised of a NMOS pipe and a PMOS pipe, the drain electrode of PMOS pipe is connected on the output of selector, source class meets power end vdd, the leakage level of NMOS pipe and the grid of PMOS pipe join, the NMOS tube source grade meets power end gnd, and grid connects the output of selector.
(2) a kind of level restorer of managing the selector circuit that forms for NMOS, level restorer is comprised of a NMOS pipe and a PMOS pipe, the drain electrode of PMOS pipe is connected on the output of selector, source class meets power end vdd, the continuous grid rear and the PMOS pipe of the grid leak of NMOS pipe joins, and the NMOS tube source grade meets power end gnd.
(3) a kind of level restorer of managing the selector circuit that forms for NMOS, level restorer is comprised of a NMOS pipe and two PMOS pipes, the drain electrode of the one PMOS pipe is connected on the output of selector, source class meets power end vdd, grid with a PMOS pipe after the grid leak of NMOS pipe links to each other joins, the NMOS tube source grade meets power end gnd, links to each other with the grid of NMOS pipe after the grid leak of the 2nd PMOS pipe is joined, and the 2nd PMOS tube source grade meets power end vdd.
(4) a kind of level restorer of managing the selector circuit that forms for PMOS, level restorer is comprised of a NMOS pipe and a PMOS pipe, the drain electrode of NMOS pipe is connected on the output of selector, source class meets power end gnd, the leakage level of PMOS pipe and the grid of NMOS pipe join, the PMOS tube source grade meets power end vdd, and grid connects the output of selector.
(5) a kind of level restorer of managing the selector circuit that forms for PMOS, level restorer is comprised of a NMOS pipe and a PMOS pipe, the drain electrode of NMOS pipe is connected on the output of selector, source class meets power end gnd, the continuous grid rear and the NMOS pipe of the grid leak of PMOS pipe joins, and the PMOS tube source grade meets power end vdd.
(6) a kind of level restorer of managing the selector circuit that forms for PMOS, level restorer is comprised of two NMOS pipes and a PMOS pipe, the drain electrode of the one NMOS pipe is connected on the output of selector, source class meets power end gnd, grid with a NMOS pipe after the grid leak of PMOS pipe links to each other joins, the PMOS tube source grade meets power end vdd, links to each other with the grid of PMOS pipe after the grid leak of the 2nd NMOS pipe is joined, and the 2nd NMOS tube source grade meets power end gnd.
Elaborate below in conjunction with accompanying drawing.
Embodiment 2, as shown in Figure 2, one-level or N level selector that X21 is comprised of the NMOS pipe, output is out, level restorer X22 is comprised of PMOS pipe MP21 and NMOS pipe MN21; The drain electrode of MP21 is connected on the output out of selector, and source class meets power end vdd, and the continuous grid rear and MP21 of the grid leak of MN21 joins, and source class meets power end gnd.When selector was not worked, the value of net2 can pull down to low level by the conducting of MN21, and output out can be pulled to high level fast by MP21, thereby had reduced the quiescent dissipation of rear class cmos circuit; When the work of N level selector, when input signal overturns from 0 to vdd, the out end can only be charged to vdd-N (vth), but by drawing effect on the MP21, so that holding, out do not have the threshold value loss when exporting high level, can export fast a vdd, because the process that does not have traditional level restorer to draw on slowly, the selector circuit time-delay also can reduce, compared with level restorer X11 shown in Figure 1, there is not the line that is in floating dummy status among the X22, net2 can be moved to zero level fast, when guaranteeing that circuit is not worked, electric leakage does not produce.
Embodiment 3, as shown in Figure 3, one-level or N level selector that X31 is comprised of the NMOS pipe, output is out, level restorer X32 is comprised of NMOS pipe MN31 and PMOS pipe MP31, MP32; The drain electrode of MP31 is connected on the output out of selector, and source class meets power end vdd, and the continuous grid rear and MP31 of the grid leak of MN31 joins, and source class meets power end gnd, links to each other with the grid of MN31 after the grid leak of MP32 is joined, and source class meets power end vdd.When selector was not worked, the value of net3 can be moved low level to by the conducting of MN31, and output out can be pulled to high level fast by MP31, thereby had reduced the quiescent dissipation of rear class cmos circuit; When the work of N level selector, when input signal overturns from 0 to vdd, the out end can only be charged to vdd-N (vth), but by drawing effect on the MP31, so that holding, out do not have the threshold value loss when exporting high level, can export fast a vdd, because the process that does not have traditional level restorer to draw on slowly, the selector circuit time-delay also can reduce, compared with level restorer X11 shown in Figure 1, there is not the line that is in floating dummy status among the X32, net3 can be pulled to zero level fast, when guaranteeing that circuit is not worked, electric leakage does not produce; Compared with level restorer X22 shown in Figure 2, when selector transmits zero level, because the existence of MP32, so that net3 is zero level for some time only, the effect of drawing on the MP31 can weaken, and the actual voltage value of out is low, so that the electric leakage of rear class cmos circuit reduces.
Embodiment 4, as shown in Figure 4, one-level or N level selector that X41 is comprised of the PMOS pipe, output is out, level restorer X42 is comprised of NMOS pipe MN41 and PMOS pipe MP41; The drain electrode of MN41 is connected on the output out of selector, and source class meets power end gnd, and the leakage level of MP41 and the grid of MN41 join, and its source class meets power end vdd, and grid meets the output out of selector.When selector was not worked, output out can be pulled down to low level by MN41 fast by the regenerative feedback loop of MN41 and MP41, thereby has reduced the quiescent dissipation of rear class cmos circuit; When the work of N level selector, when input signal overturns from vdd to 0, the out end can only be discharged into N (vth), but the positive feedback effect by MN41 and MP41, do not increase so that do not have threshold value during out end output low level, can export fast a gnd, owing to there is not slowly drop-down process of traditional level restorer, the selector circuit time-delay also can reduce.
Embodiment 5, as shown in Figure 5, one-level or N level selector that X51 is comprised of the PMOS pipe, output is out, level restorer X52 is comprised of NMOS pipe MN51 and PMOS pipe MP51; The drain electrode of MN51 is connected on the output out of selector, and source class meets power end gnd, and the continuous grid rear and MN51 of the grid leak of MP51 joins, and source class meets power end vdd.When selector was not worked, the value of net5 can be moved high level to by the conducting of MP51, and output out can be pulled down to low level fast by MN51, thereby had reduced the quiescent dissipation of rear class cmos circuit; When the work of N level selector, when input signal overturns from vdd to 0, the out end can only be discharged into N (vth), but the drop-down effect by MN51, do not increase so that do not have threshold value during out end output low level, can export a gnd, owing to there is not slowly drop-down process of traditional level restorer, the selector circuit time-delay also can reduce, compared with level restorer X42 shown in Figure 4, there is not the line that is in floating dummy status among the X52, net5 can be pulled to high level fast, when guaranteeing that circuit is not worked, electric leakage does not produce.
Embodiment 6, as shown in Figure 6, one-level or N level selector that X61 is comprised of the PMOS pipe, output is out, level restorer X62 is comprised of PMOS pipe MP61 and NMOS pipe MN61, MN62; The drain electrode of MN61 is connected on the output out of selector, and source class meets power end gnd, and the continuous grid rear and MN61 of the grid leak of MP61 joins, and source class meets power end vdd, links to each other with the grid of MP61 after the grid leak of MN62 is joined, and source class meets power end gnd.When selector was not worked, the value of net6 can be moved high level to by the conducting of MP61, and output out can be pulled down to low level fast by MN61, thereby had reduced the quiescent dissipation of rear class cmos circuit; When the work of N level selector, when input signal overturns from vdd to 0, the out end can only be discharged into N (vth), but the drop-down effect by MN61, do not increase so that do not have threshold value during out end output low level, can export fast a gnd, owing to there is not slowly drop-down process of traditional level restorer, the selector circuit time-delay also can reduce, compared with level restorer X42 shown in Figure 4, there is not the line that is in floating dummy status among the X62, net6 can be pulled to high level fast, when guaranteeing that circuit is not worked, electric leakage does not produce; Compared with level restorer X52 shown in Figure 5, when selector transmits high level, because the existence of MN62, so that net6 is high level for some time only, the drop-down effect of MN61 can weaken, and it is high that the actual voltage value of out is wanted, so that the electric leakage of rear class cmos circuit reduces.
Claims (6)
1. a level restorer that is used for the transfer tube selector comprises: the selector circuit that one-level or N level NMOS transfer tube form; It is characterized in that, also comprise a level restorer; Level restorer comprises a NMOS pipe and a PMOS pipe, and the drain electrode of PMOS pipe is connected on the output of selector, source class meets power end vdd, the leakage level of NMOS pipe and the grid of PMOS pipe join, and the NMOS tube source grade meets power end gnd, and grid connects the output of selector.
2. the level restorer for the transfer tube selector according to claim 1 is characterized in that, the NMOS pipe in the described level restorer, and after the grid leak of NMOS pipe itself linked to each other, the grid with the PMOS pipe joined again, and the NMOS tube source grade meets power end gnd.
3. the level restorer for the transfer tube selector according to claim 1, it is characterized in that, described level restorer comprises a NMOS pipe and two PMOS pipes, and the drain electrode of a PMOS pipe is connected on the output of selector, source class meets power end vdd, after the grid leak of NMOS pipe itself linked to each other, the grid with a PMOS pipe joined again, and the NMOS tube source grade meets power end gnd, link to each other with the grid of NMOS pipe after the grid leak of the 2nd PMOS pipe itself is joined, the 2nd PMOS tube source grade meets power end vdd.
4. a level restorer that is used for the transfer tube selector comprises: the selector circuit that one-level or N level PMOS transfer tube form; It is characterized in that, also comprise a level restorer; Level restorer comprises a NMOS pipe and a PMOS pipe, and the drain electrode of NMOS pipe is connected on the output of selector, source class meets power end gnd, the leakage level of PMOS pipe and the grid of NMOS pipe join, and the PMOS tube source grade meets power end vdd, and grid connects the output of selector.
5. the level restorer for the transfer tube selector according to claim 4 is characterized in that, the PMOS pipe in the described level restorer, and after the grid leak of PMOS pipe itself linked to each other, the grid with the NMOS pipe joined again, and the PMOS tube source grade meets power end vdd.
6. the level restorer for the transfer tube selector according to claim 4, it is characterized in that, described level restorer, comprise two NMOS pipes and a PMOS pipe, the drain electrode of a NMOS pipe is connected on the output of selector, and source class meets power end gnd, grid with a NMOS pipe after the grid leak of PMOS pipe itself links to each other joins, the PMOS tube source grade meets power end vdd, links to each other with the grid of PMOS pipe after the grid leak of the 2nd NMOS pipe itself is joined, and the 2nd NMOS tube source grade meets power end gnd.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110317481.5A CN103066968B (en) | 2011-10-19 | 2011-10-19 | A kind of level restorer for transfer tube selector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110317481.5A CN103066968B (en) | 2011-10-19 | 2011-10-19 | A kind of level restorer for transfer tube selector |
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| CN103066968A true CN103066968A (en) | 2013-04-24 |
| CN103066968B CN103066968B (en) | 2015-08-26 |
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| CN201110317481.5A Active CN103066968B (en) | 2011-10-19 | 2011-10-19 | A kind of level restorer for transfer tube selector |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768335B1 (en) * | 2003-01-30 | 2004-07-27 | Xilinx, Inc. | Integrated circuit multiplexer including transistors of more than one oxide thickness |
| US20060226873A1 (en) * | 2004-12-28 | 2006-10-12 | Stmicroelectronics S.R.L. | Level shifter translator |
| CN101951246A (en) * | 2010-07-05 | 2011-01-19 | 清华大学 | Quiescent voltage level restorer |
-
2011
- 2011-10-19 CN CN201110317481.5A patent/CN103066968B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768335B1 (en) * | 2003-01-30 | 2004-07-27 | Xilinx, Inc. | Integrated circuit multiplexer including transistors of more than one oxide thickness |
| US20060226873A1 (en) * | 2004-12-28 | 2006-10-12 | Stmicroelectronics S.R.L. | Level shifter translator |
| CN101951246A (en) * | 2010-07-05 | 2011-01-19 | 清华大学 | Quiescent voltage level restorer |
Non-Patent Citations (1)
| Title |
|---|
| JASON H. ANDERSON等: "Active leakage power optimization for FPGAs", 《IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS》 * |
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| CN103066968B (en) | 2015-08-26 |
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