CN103066136A - Light conversion film for improving quantum efficiency - Google Patents
Light conversion film for improving quantum efficiency Download PDFInfo
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- CN103066136A CN103066136A CN2012105814172A CN201210581417A CN103066136A CN 103066136 A CN103066136 A CN 103066136A CN 2012105814172 A CN2012105814172 A CN 2012105814172A CN 201210581417 A CN201210581417 A CN 201210581417A CN 103066136 A CN103066136 A CN 103066136A
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Abstract
The invention relates to a light conversion film for improving quantum efficiency which comprises a lining. A surface plasmon layer and a light conversion layer are placed on one surface of a lining. The surface plasmon layer and the light conversion layer are installed on one surface of the lining to improve the quantum efficiency of light conversion materials when incident light intensity is in a not very high condition. Incident light can be limited on the surface of the light conversion layer by utilizing the near-field coupling effect of surface plasmon polaritons. Meanwhile, the intensity of light irradiating on the surface of the light conversion layer can be improved by utilizing the near-field enhance effect of the light conversion layer. High-energy photons in spectrum can be converted into more low-energy photons by utilizing the Stocks effect. Total photon amount can be increased after photons are converted by the surface plasmon layer and the light conversion layer. The quantum efficiency can be improved and the incident lights can be used more efficiently.
Description
Technical field
The present invention relates to the optical material field, be specifically related to a kind of optical conversion film that improves quantum efficiency.
Background technology
Quantum efficiency and the incident intensity of light-converting material have substantial connection, and light intensity is stronger, and the quantum efficiency of light-converting material is higher, and light intensity is lower, and quantum efficiency is just lower.In a lot of applications, such as fluorescent lamp, low power LED and spectrum conversion solar cell etc., the light intensity of incident light is not too high, causes the quantum efficiency of light-converting material lower, and the number of photons of sending after conversion is less, causes the loss of energy.
The optical conversion film of the following structure of available technology adopting reduces the energy loss of light-converting material:
(1) on the surface of substrate the surface plasma excimer layer is set, because surface plasma excimer can utilize the near-field coupling effect, incident light is confined to substrate surface, and play the effect that the near field strengthens, but it only can carry out to the spectrum of a certain narrow wavestrip light field and strengthen, this is unfavorable for the light field enhancing is expanded to whole spectrum, causes energy loss.
(2) on the surface of substrate light conversion layer is set, and light conversion layer can be converted to the light of a certain wave band another wave band, but be attended by the loss of energy in the transfer process, be unfavorable for taking full advantage of spectrum.
Summary of the invention
The object of the present invention is to provide the optical conversion film of a kind of total number of photons that can improve quantum efficiency, increase output, raising material light conversion efficiency.
Concrete technical scheme of the present invention is as follows:
A kind of optical conversion film that improves quantum efficiency comprises substrate, is provided with surface plasma excimer layer and light conversion layer on one of them surface of substrate.
The material selection metal material of described surface plasma excimer layer gets final product, and preferably is selected from a kind of in the metal materials such as gold, silver, aluminium, copper, chromium, lithium.
The material of described light conversion layer is so long as be mixed with the material of rare earth ion, such as the oxide that is mixed with one or more rare earth ions, sulfide, fluoride, silicate etc. all can, be selected from preferably that yttrium-aluminium-garnet, aluminium borate gadolinium, gadolinium lithium fluoride, yttrium fluoride, yttrium fluoride are received, a kind of in the barium fluoride, aluminium borate gadolinium ytterbium, boric acid gadolinium, titanium dioxide, zinc sulphide, zinc fluoride, zinc chloride, silicate.
Described light conversion layer is located between substrate and the surface plasma excimer layer.
Described surface plasma excimer layer and light conversion layer are film, and film thickness is 1nm-1mm; After adopting this kind structure, can further improve quantum efficiency.
Described light conversion layer is film, and film thickness is 1nm-1mm; Described surface plasma excimer layer is comprised of spaced spheroid unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um; After adopting this kind structure, can further improve quantum efficiency.
Described light conversion layer is comprised of spaced cylinder unit, and intercolumniation is 1-1000nm, and height of column is 1nm-1mm, and column diameter is 1nm-1um; Described surface plasma excimer layer is comprised of the spheroid unit, and the spheroid unit is arranged on the top of cylinder unit, and sphere diameter is 1-100nm; After adopting this kind structure, can further improve quantum efficiency.
Described light conversion layer is comprised of spaced cylinder unit, and intercolumniation is 1-1000nm, and height of column is 1nm-1mm; Described surface plasma excimer layer is comprised of the spheroid unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um, in the part gap between spheroid unit or the embedding cylinder unit, or in the whole gaps between the embedding cylinder unit; After adopting this kind structure, can further improve quantum efficiency.
Described cylinder unit is batter post, and the spheroid unit also is arranged on the top of batter post.
Described light conversion layer is comprised of spaced centrum unit, and the cone spacing is 0-1um, and vertebral height is 1nm-1mm, and cone bottom diameter is 1nm-1mm, and cone angle is 0 °-179 °; Described surface plasma excimer layer is comprised of the spheroid unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um, and the spheroid unit is arranged on the conical surface of centrum unit; After adopting this kind structure, can further improve quantum efficiency.
In order to improve the quantum efficiency of light-converting material in the not too high situation of incident intensity, the present invention arranges surface plasma excimer layer and light conversion layer on one of them surface of substrate; Utilize the near-field coupling effect of surface plasma excimer, incident light is confined to the surface of light conversion layer, the effect that strengthens by its near field simultaneously improves the light intensity that incides the light conversion layer surface.Utilize the Stokes effect, convert high-energy photons in the spectrum to more energy photons, behind surface plasma excimer layer and light conversion layer, total number of photons obtains increasing, and quantum efficiency gets a promotion, and incident light obtains more effective utilization.
Optical conversion film provided by the invention is widely used, and both can be used for the multiple solar cell surface such as silicon solar cell, thin-film solar cells, improves the battery quantum efficiency, improves the photoelectric conversion efficiency of battery; Can be used for again the optical devices such as LED, improve the light intensity of device simultaneously, improve the quantum efficiency of light conversion; Meanwhile, also can be used on the material such as agricultural film, improve intensity of illumination simultaneously, change and shine in crops surface light wave, more be conducive to the photosynthetic efficiency of plant.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1;
Fig. 2 is the structural representation of the embodiment of the invention 2;
Fig. 3 is the structural representation of the embodiment of the invention 3;
Fig. 4 is the vertical view of Fig. 3;
Fig. 5 is the structural representation of the embodiment of the invention 4;
Fig. 6 is the vertical view of Fig. 5;
Fig. 7 is the structural representation of the embodiment of the invention 5;
Fig. 8 is the vertical view of Fig. 7;
Fig. 9 is the structural representation of the embodiment of the invention 6;
Figure 10 is the vertical view of Fig. 9.
Wherein: 1 is the surface plasma excimer layer, and 2 is light conversion layer, and 3 is substrate.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
The present invention adopts the method for existing electron beam evaporation deposition, vacuum vapor plating, magnetron sputtering plating or chemical vapour deposition (CVD) on one of them surface of substrate 3 surface plasma excimer layer 1 and light conversion layer 2 to be set, utilize the near-field coupling effect of surface plasma excimer, incident light is confined to the surface of light-converting material, the effect that strengthens by its near field simultaneously improves the light intensity that incides the light-converting material surface.Utilize the Stokes effect, convert high-energy photons in the spectrum to more energy photons, behind surface plasma excimer layer and light conversion layer, total number of photons obtains increasing, and quantum efficiency gets a promotion, and incident light obtains more effective utilization.
The concrete preparation technology of optical conversion film is as follows:
1. adopt the electron beam evaporation deposition method, material yttrium aluminum garnet is prepared in one of them surface of substrate, form light conversion film, its pattern is uniform planar, and thickness is 150nm;
2. the employing vacuum evaporatation is prepared in the light conversion film surface with the material gold, forms the surface plasma excimer film, and pattern is uniform planar, and thickness is 10nm.
The concrete structure of the optical conversion film that is prepared by the method is referring to Fig. 1; Wherein the thickness of light conversion film and surface plasma excimer film can be between 1nm-1mm.
The optical conversion film that yttrium-aluminium-garnet light-converting material and present embodiment are prepared is placed on respectively in the IPCE/QE test macro to be tested, wherein the quantum efficiency of yttrium-aluminium-garnet light-converting material is 52.37%, the quantum efficiency of optical conversion film is 61.9%, and quantum efficiency amplification is 18.2%.
The concrete preparation technology of optical conversion film is as follows:
1. adopt the electron beam evaporation deposition method, material aluminium borate gadolinium is prepared in one of them surface of substrate, form light conversion film, its pattern is uniform planar, and thickness is 200nm;
2. the employing vacuum evaporatation is prepared in the light conversion film surface with material chromium, and pattern is spaced spheroid unit, and sphere diameter is at 8nm, and sphere gap is 1um.
The concrete structure of the optical conversion film that the method prepares is referring to Fig. 2; Wherein the thickness of light conversion film can be between 1nm-1mm; Sphere diameter can be between 1-100nm, and sphere gap can be between 0-1um.
The optical conversion film that aluminium borate gadolinium light-converting material and present embodiment are prepared is placed on respectively in the IPCE/QE test macro to be tested, wherein the quantum efficiency of aluminium borate gadolinium light-converting material is 52.36%, the quantum efficiency of optical conversion film is 65.78%, and quantum efficiency amplification is 25.63%.
The concrete preparation technology of optical conversion film is as follows:
1. employing vacuum evaporatation is prepared in one of them surface of substrate with the material gadolinium lithium fluoride, and pattern is spaced straight cylinder, and the height of straight cylinder is 120nm, and intercolumniation is 50nm;
2. employing vacuum evaporatation is prepared in the top of straight cylinder with materials of aluminum, and pattern is spheroid, and sphere diameter is 20nm.
The concrete structure of the optical conversion film that the method prepares is referring to Fig. 3 and Fig. 4; Wherein the altitude range of straight cylinder is between 1nm-1mm, and intercolumniation is between 1-1000nm; Sphere diameter can be between 1-100nm.
The optical conversion film that gadolinium lithium fluoride light-converting material and present embodiment are prepared is placed on respectively in the IPCE/QE test macro to be tested, wherein the quantum efficiency of gadolinium lithium fluoride light-converting material is 52.37%, the quantum efficiency of optical conversion film is 70.15%, and quantum efficiency amplification is 33.95%.
Embodiment 4
The concrete preparation technology of optical conversion film is as follows:
1. adopt the magnetron sputtering embrane method, the material yttrium fluoride is prepared in one of them surface of substrate, pattern is spaced straight cylinder, and the height of straight cylinder is 100nm, and intercolumniation is 100nm;
2. employing vacuum evaporatation is prepared in material copper in the gap between spaced straight cylinder and the straight cylinder, and pattern is spheroid, and sphere diameter is 15nm; In the part gap between spheroid unit or the embedding cylinder unit, or in the whole gaps between the embedding cylinder unit.
The concrete structure of the optical conversion film that the method prepares is referring to Fig. 5 and Fig. 6; Wherein the height of straight cylinder is between 1nm-1mm, and intercolumniation is between 1-1000nm; Sphere diameter can be between 1-100nm.
The optical conversion film that yttrium fluoride light-converting material and present embodiment are prepared is placed on respectively in the IPCE/QE test macro to be tested, wherein the quantum efficiency of yttrium fluoride light-converting material is 52.38%, the quantum efficiency of optical conversion film is 75.57%, and quantum efficiency amplification is 44.27%.
Embodiment 5
The concrete preparation technology of optical conversion film is as follows:
1. employing chemical vapour deposition technique is prepared in one of them surface of substrate with material zinc sulphide, and pattern is spaced scalene cylinder, and height of column is 250nm, and intercolumniation is 60nm;
2. the employing vacuum evaporatation is prepared in the material gold in the top and the gap between scalene cylinder and the scalene cylinder of spaced scalene cylinder, and pattern is spheroid, and sphere diameter is 10nm.
The concrete structure of the optical conversion film that the method prepares is referring to Fig. 7 and Fig. 8; Wherein the height of column scope of scalene cylinder is between 1nm-1mm, and intercolumniation is between 1-1000nm; Sphere diameter can be between 1-100nm.
The optical conversion film that zinc sulphide light-converting material and present embodiment are prepared is placed on respectively in the IPCE/QE test macro to be tested, wherein the quantum efficiency of zinc sulphide light-converting material is 52.37%, the quantum efficiency of optical conversion film is 69.95%, and quantum efficiency amplification is 33.57%.
Embodiment 6
The concrete preparation technology of optical conversion film is as follows:
1. employing chemical vapour deposition technique is prepared in one of them surface of substrate with material aluminium borate gadolinium ytterbium, and pattern is spaced centrum, and the cone height is 180nm, and the cone spacing is for being 0nm;
2. the employing vacuum evaporatation is prepared in material silver on the conical surface of spaced centrum, and pattern is spheroid, and sphere diameter is 18nm.
The concrete structure of the optical conversion film that the method prepares is referring to Fig. 9 and Figure 10; Wherein vertebral height is between 1nm-1mm, and the cone spacing is between 0-1um; Sphere diameter can be between 1-100nm.
The optical conversion film that aluminium borate gadolinium ytterbium light-converting material and present embodiment are prepared is placed on respectively in the IPCE/QE test macro to be tested, wherein the quantum efficiency of aluminium borate gadolinium ytterbium light-converting material is 52.37%, the quantum efficiency of optical conversion film is 72.59%, and quantum efficiency amplification is 38.61%.
Claims (10)
1. an optical conversion film that improves quantum efficiency comprises substrate, it is characterized in that being provided with surface plasma excimer layer and light conversion layer on one of them surface of substrate.
2. optical conversion film according to claim 1, the material that it is characterized in that described surface plasma excimer layer are selected from a kind of in gold, silver, aluminium, copper, chromium, the lithium.
3. optical conversion film according to claim 1, the material that it is characterized in that described light conversion layer are selected from that yttrium-aluminium-garnet, aluminium borate gadolinium, gadolinium lithium fluoride, yttrium fluoride, yttrium fluoride are received, a kind of in the barium fluoride, aluminium borate gadolinium ytterbium, boric acid gadolinium, titanium dioxide, zinc sulphide, zinc fluoride, zinc chloride, silicate.
4. according to claim 1 to 3 each described optical conversion films, it is characterized in that light conversion layer is located between substrate and the surface plasma excimer layer.
5. optical conversion film according to claim 4 is characterized in that described surface plasma excimer layer and light conversion layer are film, and film thickness is 1nm-1mm.
6. optical conversion film according to claim 4 is characterized in that described light conversion layer is film, and film thickness is 1nm-1mm; Described surface plasma excimer layer is comprised of spaced spheroid unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um.
7. optical conversion film according to claim 4 is characterized in that described light conversion layer is comprised of spaced cylinder unit, and intercolumniation is 1-1000nm, and height of column is 1nm-1mm, and column diameter is 1nm-1um; Described surface plasma excimer layer is comprised of the spheroid unit, and the spheroid unit is arranged on the top of cylinder unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um.
8. optical conversion film according to claim 4 is characterized in that described light conversion layer is comprised of spaced cylinder unit, and intercolumniation is 1-1000nm, and height of column is 1nm-1mm, and column diameter is 1nm-1um; Described surface plasma excimer layer is comprised of the spheroid unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um, in the gap between the embedding cylinder unit, spheroid unit.
9. optical conversion film according to claim 8 is characterized in that described cylinder unit is batter post, and the spheroid unit also is arranged on the top of batter post.
10. optical conversion film according to claim 4 is characterized in that described light conversion layer is comprised of spaced centrum unit, and the cone spacing is 0-1um, and vertebral height is 1nm-1mm, and cone bottom diameter is 1nm-1mm; Described surface plasma excimer layer is comprised of the spheroid unit, and the spheroid unit is arranged on the conical surface of centrum unit, and sphere diameter is 1-100nm, and sphere gap is 0-1um.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406357A (en) * | 2015-12-10 | 2016-03-16 | 上海电机学院 | Plasmon photon source device and method for generating surface plasmon photon |
| CN106876513A (en) * | 2017-03-06 | 2017-06-20 | 东南大学 | A kind of grade is from the horizontal heterogeneous integrated solar cell of polariton |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740722A (en) * | 2009-12-25 | 2010-06-16 | 中国科学院光电技术研究所 | Almost perfect absorbing structure for wide wave band |
| CN102044575A (en) * | 2010-12-02 | 2011-05-04 | 江苏大学 | Surface plasma silicon hydride film solar cell |
| CN102157627A (en) * | 2011-03-22 | 2011-08-17 | 东南大学 | Synergy method of surface plasmon metallic nano-chain in solar battery |
| CN102157625A (en) * | 2011-03-16 | 2011-08-17 | 东南大学 | Method for improving conversion efficiency of solar battery and light conversion film |
| WO2012015151A2 (en) * | 2010-07-30 | 2012-02-02 | 엘지이노텍주식회사 | Solar cell and method for manufacturing same |
| US20120064134A1 (en) * | 2010-08-06 | 2012-03-15 | Immunolight, Llc | Color enhancement utilizing up converters and down converters |
| CN102544177A (en) * | 2011-03-30 | 2012-07-04 | 郑州大学 | Plasma strengthening upconverter for solar cells and preparation method thereof |
| CN102646745A (en) * | 2012-04-01 | 2012-08-22 | 北京大学深圳研究生院 | Photovoltaic device and solar battery |
-
2012
- 2012-12-27 CN CN2012105814172A patent/CN103066136A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740722A (en) * | 2009-12-25 | 2010-06-16 | 中国科学院光电技术研究所 | Almost perfect absorbing structure for wide wave band |
| WO2012015151A2 (en) * | 2010-07-30 | 2012-02-02 | 엘지이노텍주식회사 | Solar cell and method for manufacturing same |
| US20120064134A1 (en) * | 2010-08-06 | 2012-03-15 | Immunolight, Llc | Color enhancement utilizing up converters and down converters |
| CN102044575A (en) * | 2010-12-02 | 2011-05-04 | 江苏大学 | Surface plasma silicon hydride film solar cell |
| CN102157625A (en) * | 2011-03-16 | 2011-08-17 | 东南大学 | Method for improving conversion efficiency of solar battery and light conversion film |
| CN102157627A (en) * | 2011-03-22 | 2011-08-17 | 东南大学 | Synergy method of surface plasmon metallic nano-chain in solar battery |
| CN102544177A (en) * | 2011-03-30 | 2012-07-04 | 郑州大学 | Plasma strengthening upconverter for solar cells and preparation method thereof |
| CN102646745A (en) * | 2012-04-01 | 2012-08-22 | 北京大学深圳研究生院 | Photovoltaic device and solar battery |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406357A (en) * | 2015-12-10 | 2016-03-16 | 上海电机学院 | Plasmon photon source device and method for generating surface plasmon photon |
| CN105406357B (en) * | 2015-12-10 | 2018-12-11 | 上海电机学院 | Phasmon photon source device and the method for generating surface phasmon photon |
| CN106876513A (en) * | 2017-03-06 | 2017-06-20 | 东南大学 | A kind of grade is from the horizontal heterogeneous integrated solar cell of polariton |
| CN106876513B (en) * | 2017-03-06 | 2018-08-21 | 东南大学 | It is a kind of equal from the lateral heterogeneous integrated solar cell of polariton |
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Application publication date: 20130424 |