CN103066092A - Image sensor wafer reverse side processing method - Google Patents
Image sensor wafer reverse side processing method Download PDFInfo
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- CN103066092A CN103066092A CN2013100112888A CN201310011288A CN103066092A CN 103066092 A CN103066092 A CN 103066092A CN 2013100112888 A CN2013100112888 A CN 2013100112888A CN 201310011288 A CN201310011288 A CN 201310011288A CN 103066092 A CN103066092 A CN 103066092A
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- oxide film
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- wafer rear
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Abstract
The invention relates to an image sensor wafer reverse side processing method. The image sensor wafer reverse side processing method includes a first step of carrying out polishing treatment to the surface of a wafer and planarizing the surface of the wafer, a second step of carrying out bonding connection to the obverse side of the wafer and a ground slide, a third step of carrying out thinning treatment to the reverse side of the wafer, a fourth step of carrying out treatment to the surface of the reverse side of the wafer through adoption of ozone, wherein the ozone concentration is 20-80 milligrams per liter, the treatment time is 6-15 minutes, and after treatment a layer of oxide film is generated on the reverse side of the wafer and the thickness of the oxide film is 10-15 angstroms, a fifth step of depositing a layer of high medium layer on the oxide film generated on the reverse side of the wafer, and a sixth step of depositing a metal shielding layer on the high medium layer. Through utilization of high activity of the ozone and on the basis of not needing extra hot process, the oxide film with high quality is generated on the reverse side of a silicon substrate of the wafer of a device. The problem of surface defects caused in the process of thinning of the reverse side of the wafer of the device is solved. Crosstalk and other problems generated by an image sensor are avoided. The image sensor wafer reverse side processing method has the advantages that temperature is low, cost is low, and process is easy to control.
Description
Technical field
The present invention relates to the image sensor method for processing back surface of wafer.
Background technology
The backside illuminated image transducer needs to make incident light enter photodiode area the device wafers thinning back side, and the performance that some substrate defects that thinning process causes can image sensors such as the generation problem such as crosstalk, needs to solve in a hurry.Existing solution is to process by the method for steam oxidation thing, but owing to the problems such as technological temperature is high, and cost is large, the space so that the performance of transducer has greatly improved.
Summary of the invention
Technical problem to be solved by this invention provides a kind of image sensor method for processing back surface of wafer, by utilizing the high activity of ozone, grows the higher sull of quality at the device wafers silicon base back side on the basis that does not need extra thermal process.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of image sensor method for processing back surface of wafer, may further comprise the steps,
Crystal column surface is carried out polishing, make its planarization;
The front of wafer is connected with the slide glass bonding;
Wafer rear is carried out reduction processing;
Adopt ozone to the wafer rear surface treatment, generate one deck oxide film at wafer rear;
Deposit one floor height dielectric layer on the oxide film that wafer rear generates;
Deposit layer of metal shielding layer on described high dielectric layer.
On the basis of technique scheme, the present invention can also do following improvement:
Further, described employing ozone generates in the step of one deck oxide film at wafer rear the wafer rear surface treatment, and the concentration of described ozone is 20～80 mg/litre.
Further, described employing ozone generates 6～15 minutes processing times of the step of one deck oxide film to the wafer rear surface treatment at wafer rear.
Further, described employing ozone generates in the step of one deck oxide film at wafer rear the wafer rear surface treatment, and described oxide film thickness is 10～15 dusts.
The invention has the beneficial effects as follows: the present invention is by utilizing the high activity of ozone, on the basis that does not need extra thermal process, grow the higher sull of quality at the silicon base back side of device wafers, the problem of the blemish that solution device thinning back side of silicon wafer process causes, the problem such as avoid image sensor to produce crosstalking, advantage of the present invention is that temperature is low, cost is low, and technique is controlled easily.
Description of drawings
Fig. 1 is image sensor wafer rear processing technological flow figure of the present invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
As shown in Figure 1, processing comprises to the image sensor wafer rear,
Step 101: crystal column surface is carried out polishing, make its planarization;
Step 102: the front of wafer is connected with the slide glass bonding; Step 103: wafer rear is carried out reduction processing;
Step 104: adopt ozone to the wafer rear surface treatment, wherein ozone concentration is 20～80 mg/litre (mg/L), processing time is 6～15 minutes (minutes), generates one deck oxide film at wafer rear after processing, and oxide film thickness is 10～15 dusts (A);
Step 105: deposit one floor height dielectric layer on the oxide film that wafer rear generates;
Step 106: deposit layer of metal shielding layer on described high dielectric layer.And subsequent technique.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. an image sensor method for processing back surface of wafer is characterized in that, may further comprise the steps,
Crystal column surface is carried out polishing, make its planarization;
The front of wafer is connected with the slide glass bonding;
Wafer rear is carried out reduction processing;
Adopt ozone to the wafer rear surface treatment, generate one deck oxide film at wafer rear;
Deposit one floor height dielectric layer on the oxide film that wafer rear generates;
Deposit layer of metal shielding layer on described high dielectric layer.
2. described a kind of image sensor method for processing back surface of wafer according to claim 1 is characterized in that, described employing ozone generates in the step of one deck oxide film at wafer rear the wafer rear surface treatment, and the concentration of described ozone is 20～80 mg/litre.
3. described a kind of image sensor method for processing back surface of wafer according to claim 1 and 2 is characterized in that, described employing ozone generates 6～15 minutes processing times of the step of one deck oxide film to the wafer rear surface treatment at wafer rear.
4. described a kind of image sensor method for processing back surface of wafer according to claim 3 is characterized in that, described employing ozone generates in the step of one deck oxide film at wafer rear the wafer rear surface treatment, and described oxide film thickness is 10～15 dusts.
5. described a kind of image sensor method for processing back surface of wafer according to claim 1 is characterized in that, described employing ozone generates in the step of one deck oxide film at wafer rear the wafer rear surface treatment, and described oxide film thickness is 10～15 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100112888A CN103066092A (en) | 2013-01-11 | 2013-01-11 | Image sensor wafer reverse side processing method |
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| CN2013100112888A CN103066092A (en) | 2013-01-11 | 2013-01-11 | Image sensor wafer reverse side processing method |
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| CN103066092A true CN103066092A (en) | 2013-04-24 |
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| CN2013100112888A Pending CN103066092A (en) | 2013-01-11 | 2013-01-11 | Image sensor wafer reverse side processing method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638095A (en) * | 2003-12-26 | 2005-07-13 | 株式会社瑞萨科技 | Fabrication method of semiconductor integrated circuit device |
| US20100148290A1 (en) * | 2008-12-17 | 2010-06-17 | Samsung Electronics Co., Ltd. | Cmos image sensors and related devices and fabrication methods |
| CN101752394A (en) * | 2008-12-08 | 2010-06-23 | 全视科技有限公司 | CMOS image sensor with improved backside surface treatment |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
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2013
- 2013-01-11 CN CN2013100112888A patent/CN103066092A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638095A (en) * | 2003-12-26 | 2005-07-13 | 株式会社瑞萨科技 | Fabrication method of semiconductor integrated circuit device |
| CN101752394A (en) * | 2008-12-08 | 2010-06-23 | 全视科技有限公司 | CMOS image sensor with improved backside surface treatment |
| US20100148290A1 (en) * | 2008-12-17 | 2010-06-17 | Samsung Electronics Co., Ltd. | Cmos image sensors and related devices and fabrication methods |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
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Application publication date: 20130424 |