CN103065950A - Crosswise heterogeneous electron irradiation method of improving global completion table (GCT) chip safe working area - Google Patents
Crosswise heterogeneous electron irradiation method of improving global completion table (GCT) chip safe working area Download PDFInfo
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Abstract
Provided is a crosswise heterogeneous electron irradiation method of improving a global completion table (GCT) chip safe working area. The crosswise heterogeneous electron irradiation method of improving the GCT chip safe working area comprises the following steps: (1) carrying out pre-radiation of a GCT chip, and carrying out a primary pre-irradiation to the GCT chip through methods of controlling minority carrier lifetime and pressure drop of the GCT chip, (2) carrying out monitoring of the minority carrier lifetime and pressure drop of the GCT chip after a primary annealing, (3) adopting composite alloy baffles, carrying out a second irradiation and a second annealing to the GCT chip by using heterogeneity of electron irradiation penetrating through the composite alloy baffles, and (4) carrying out the monitoring of the minority carrier lifetime and pressure drop of the GCT chip again. The crosswise heterogeneous electron irradiation method of improving the GCT chip safe working area has the advantages of being simple in principle, and simple and convenient to operate, achieving control of the minority carrier lifetime of parts of the GCT chip, reducing redistribution effect of an electric current in the process of cutoff of GCT by reducing the minority carrier lifetime of far from gate pole slivers, and improving a whole safe working area of the GCT chip and the like.
Description
Technical field
The present invention is mainly concerned with the large power semiconductor device field, refer in particular to a kind of horizontal non-homogeneous electronic radiation method that is used for improving GCT chip safety operation area, the main application has unconnected gate electrode structure and the discrete sliver structure of circulating type GCT chip, also is applicable to have simultaneously similar structures GTO and ETO chip electron irradiation and uses.
Background technology
The high energy particle irradiation technique is the parameter control technology of the present large power semiconductor device that generally adopts in the world, its basic principle is by having the energetic particle beam irradiation semiconductor of enough macro-energy, lattice atoms generation elastic collision in high energy particle and the semiconductor, make lattice atoms produce displacement, thereby produce interstitial atom-hole pair, corresponding these defectives have also produced corresponding deep energy level in semi-conductive forbidden band when generating, different high energy particle kind and energy, correspondence produces different deep energy levels, thereby has realized the control of the different electrical parameters of semiconductor device.
At present, ray or the particle for large power semiconductor device irradiation mainly contains high energy electron, gamma-rays, high energy proton and fast neutron.Wherein, electron irradiation is a kind of the most frequently used power semiconductor irradiation technique, dosage by the control electron irradiation, realization is to the control of complex centre effective dose, its macro manifestations is the control of minority carrier life time, and then realizes the control to the relevant electrical parameter (such as blocking voltage, pressure drop, leakage current, service time, turn-off time etc.) of minority carrier life time.
Traditional large power semiconductor device electron irradiation all adopts the mode of Uniform Irradiation, namely be identical (electron irradiation can be ignored with respect to single semiconductor decay) at the internal electron irradiation dose of semiconductor device, so the carrier lifetime of semiconductor device is evenly control at chip everywhere.Along with the development of semiconductor device, the full-control type semiconductor device with discrete sliver formula structure occurs, and such as GTO, GCT etc., these devices have independently gate structure (comprising center gate pole, annular gate pole or edge gate pole) and the discrete sliver structure of circulating type.Take GCT as example, in the whole turn off process of GCT, discrete sliver and gate pole distance difference, can produce the fine difference (microsecond grade) of different discrete sliver formula turn-off times, and the just reallocation of GCT integral member meeting generation current in this small difference, understand concentrating of generation current away from the sliver of gate pole, and causing the inefficacy of GCT chip.Along with the increase with the GCT chip size of increasing of using voltage, the local current distributing uniformity of GCT chip will become the key factor that affects IGCT safety operation area (SOA).
At present, for the full-control type large power semiconductor device, increasing the safety operation area is its important developing direction.There is the practitioner to propose for IGCT safety operation area improved plan, wherein transverse current distribute again and local minority carrier life time control technology be two important control technology, and in fact owing to the otherness of actual process and the heteropical existence between the chip, the improvement that makes actual IGCT devices in batches carry out the safety operation area becomes a bottleneck.
Summary of the invention
The technical problem to be solved in the present invention just is: for the technical problem that prior art exists, the invention provides a kind of principle simple, easy and simple to handle, by twice irradiation technique with realize the local minority carrier life time control of GCT chip, by reduce minority carrier life time away from the gate pole sliver, be reduced in electric current in the GCT turn off process redistribution effects, improve the horizontal non-homogeneous electronic radiation method of the raising GCT chip safety operation area of GCT chip general safety service area.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of horizontal non-homogeneous electronic radiation method that improves GCT chip safety operation area the steps include:
(1) the pre-radiation of GCT chip; By the minority carrier life time of control chip and the method for pressure drop, the GCT chip is carried out a pre-irradiation;
(2) once annealing after, carry out minority carrier life time and chip pressure drop the monitoring;
(3) adopt the composite alloy baffle plate, the heterogeneity of utilizing electron irradiation to penetrate the composite alloy baffle plate is carried out secondary irradiation and annealing to the GCT chip;
(4) again carry out minority carrier life time and chip pressure drop monitoring.
As a further improvement on the present invention:
Selection standard A type baffle plate carries out irradiation to asymmetric GCT chip, adopts 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, and process annealing 12～24h, the chip monitoring pressure drop reaches 75～85% of standard pressure drop, minority carrier life time deviation 10～20%.
For 4 inches asymmetric GCT, the apparent size of A type baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, the annular gate pole stops that width Hm is 2.5-4 mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 40-50 mm, the central door polar diameter is that Rm2 is 5-7, and the outer alloy barrier effective gradient angle α of annular gate pole is 8-9 °, and alloy barrier effective gradient angle β is 8-10 ° in the annular gate pole;
For 6 inches asymmetric GCT, the apparent size of A type baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, the annular gate pole stops that width Hm is 4-6mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 80-90 mm, the central door polar diameter is that Rm2 is 5-10, and the outer alloy barrier effective gradient angle α of annular gate pole is 7.5-9 °, and alloy barrier effective gradient angle β is 7-8.5 ° in the annular gate pole.
Select the Type B baffle plate to carrying out irradiation against leading the GCT chip, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 65～75% of standard pressure drop, minority carrier life time deviation 10～20%.
For 4 inches contrary GCT chips of leading, the apparent size of Type B baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, and annular gate pole stops that width Hm is 5-8 mm, the contrary translucent effective irradiation diameter of the diode R that leads
DBe 38-46 mm, the outer alloy barrier effective gradient angle α of annular gate pole is 8-9 °, translucent alloy barrier layer cup depth H
DBe 8-10 mm;
For 6 inches contrary GCT chips of leading, the apparent size of Type B baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, and annular gate pole stops that width Hm is 8-10mm, the contrary translucent effective irradiation diameter of the diode R that leads
DBe 75-86 mm, the outer alloy barrier effective gradient angle α of annular gate pole is 7.5-9 °, translucent alloy barrier layer cup depth H
DBe 7-8.5 mm.
Select C type baffle plate that the asymmetric GCT chip of large safety operation area HPT is carried out irradiation, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 85～95% of standard pressure drop, minority carrier life time deviation 5～10%.
For 4 inches asymmetric GCT chips of large safety operation area HPT, the apparent size of C type baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, the annular gate pole stops that width Hm is 2.5-4mm, central door polar diameter Rm2 is 5-7 mm, the outer alloy barrier effective gradient angle α of annular gate pole is 12-15 °, and alloy barrier effective gradient angle β is 7-9 ° in the annular gate pole;
For 6 inches asymmetric GCT chips of large safety operation area HPT, the apparent size of C type baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, the annular gate pole stops that width Hm is 4-6mm, central door polar diameter Rm2 is 5-10mm, the outer alloy barrier effective gradient angle α of annular gate pole is 11-13 °, and alloy barrier effective gradient angle β is 6.5-8.5 ° in the annular gate pole.
Select D type baffle plate that the asymmetric GCT chip of symmetric form GCT or special applications is carried out irradiation, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 80～90% of standard pressure drop, minority carrier life time deviation 10～20%.
For 4 inches GCT chips, the apparent size of D type baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, the annular gate pole stops that width Hm is 2.5-4mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 40-50mm, central door polar diameter Rm2 is 5-7 mm, and the outer reverse effective gradient of the alloy barrier angle α of annular gate pole is 2-3 °, and the reverse effective gradient of alloy barrier angle β is 1-2 ° in the annular gate pole;
For 6 inches GCT chips, the apparent size of D type baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, the annular gate pole stops that width Hm is 4-6mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 80-90mm, central door polar diameter Rm2 is 5-10 mm, and the outer reverse effective gradient of the alloy barrier angle α of annular gate pole is 1.5-2.5 °, and the reverse effective gradient of alloy barrier angle β is 1-1.5 ° in the annular gate pole.
In the bottom of composite alloy baffle plate transparent catch is set, the GCT chip is positioned over the below of transparent catch, and at the another side of GCT chip the anode molybdenum sheet is set.
Compared with prior art, the invention has the advantages that: the present invention improves the horizontal non-homogeneous electronic radiation method of GCT chip safety operation area, principle is simple, easy and simple to handle, by twice irradiation technique, realized the local minority carrier life time control of GCT chip, by reducing the minority carrier life time away from the sliver of gate pole, reduced the redistribution effects of electric current in the GCT turn off process, thereby improved the general safety service area of GCT chip.
Description of drawings
Fig. 1 is the principle schematic of the inventive method.
Fig. 2 is the structural representation of the standard A type baffle plate that adopts in the concrete application example 1.
Fig. 3 is the structural representation of the Type B baffle plate that adopts in the concrete application example 2.
Fig. 4 is the structural representation of the C type baffle plate that adopts in the concrete application example 3.
Fig. 5 is the structural representation of the D type baffle plate that adopts in the concrete application example 4.
Fig. 6 is the concrete assembling schematic diagram in the concrete application example 1.
Embodiment
Below with reference to Figure of description and specific embodiment the present invention is described in further details.
As shown in Figure 1, the present invention is a kind of horizontal non-homogeneous electronic radiation method that improves GCT chip safety operation area, the steps include:
(1) the pre-radiation of GCT chip.By the minority carrier life time of control chip and the method for pressure drop, the GCT chip is carried out a pre-irradiation.
(2) once annealing after, carry out minority carrier life time and chip pressure drop the monitoring.
(3) adopt the composite alloy baffle plate, the heterogeneity of utilizing electron irradiation to penetrate the composite alloy baffle plate is carried out secondary irradiation and annealing to the GCT chip, to realize minority carrier life time and the pressure drop requirement of GCT chip.The type of this composite alloy baffle plate can decide according to chip type and sliver figure.
(4) again carry out minority carrier life time and chip pressure drop monitoring.
In twice irradiance method of the present invention, pre-irradiation can make the initial parameter (minority carrier life time, voltage drop value etc.) of chip reach relatively uniform, and secondary irradiation can make chip differences further be adjusted.Can realize the Quadratic Non-Uniform irradiation of GCT chip transversary by special composite alloy baffle plate, the purer stereotype of composite alloy baffle plate that wherein adopts has higher hardness and machinability, it still has highdensity characteristics simultaneously, has stronger block for penetration of electrons.
By said method of the present invention, can improve the safety operation area scope of 10% left and right GCT.For turn-offing the IGCT device, can make the maximum turn off current capability improving 10% of device during use, will be above 4500A such as the asymmetric IGCT device maximum controllable current ability for 4500V/4000A.
In concrete application example 1, the inventive method is applied to asymmetric GCT chip.Adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 75～85% of standard pressure drop, minority carrier life time deviation 10～20%.As shown in Figure 2, selection standard A type baffle plate, the irradiation standard metering carries out the low temperature double annealing, finishes actual sliver pressure drop and minority carrier life time and detects; Its applicable elements is: 4 inches, 6 inches asymmetric GCT secondary barrier type non-uniform irradiations.Following table 1 is the apparent size explanation of A type baffle plate:
Table 1
| Formal parameter | Symbol | 4 inches GCT term of reference units: length (mm) angle (°) | 6 inches GCT term of reference units: length (mm) angle (°) | Allow maximum deviation unit: length (mm) angle (°) |
| Outer anchor clamps annular diameter | Xm1 | 95-105 | 140-150 | 0.5 |
| Interior composite alloy effectively stops the irradiation diameter | Xm2 | 83-87 | 132-138 | 0.5 |
| The annular gate pole stops width | Hm | 2.5-4 | 4-6 | 0.1 |
| Annular gate pole internal resistance gear effective irradiation diameter | Rm1 | 40-50 | 80-90 | 0.5 |
| The central door polar diameter | Rm2 | 5-7 | 5-10 | 0.1 |
| The outer alloy barrier effective gradient angle of annular gate pole | α | 8-9 | 7.5-9 | 0.05 |
| Alloy barrier effective gradient angle in the annular gate pole | β | 8-10 | 7-8.5 | 0.05 |
As shown in Figure 6, be the assembling of the use as an example of the A type baffle plate shown in Fig. 2 example schematic diagram, the direction of arrow is the electron irradiation direction among the figure.Transparent catch 2 is installed on the bottom of A type baffle plate, and GCT chip 3 is installed on the below of transparent catch 2, anode molybdenum sheet 4 is positioned at the opposite side of GCT chip 3.
In concrete application example 2, the inventive method is applied to the contrary GCT chip of leading.Adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the pressure drop of chip monitoring reaches 65～75% of standard pressure drop, minority carrier life time deviation 10～20%.As shown in Figure 3, selection standard Type B baffle plate, irradiation 150% standard metering carries out the low temperature double annealing, finishes actual sliver pressure drop and minority carrier life time and detects; Its applicable elements is: 4 inches and 6 inches are contrary leads type GCT, and the difference of this baffle plate and A type baffle plate is: center baffle is for for against leading the translucent Resistance of fly-wheel diode among the type GCT.Following table 2 is the apparent size explanation of Type B baffle plate:
Table 2
| Formal parameter | Symbol | 4 inches GCT term of reference units: length (mm) angle (°) | 6 inches GCT term of reference units: length (mm) angle (°) | Allow maximum deviation unit: length (mm) angle (°) |
| Outer anchor clamps annular diameter | Xm1 | 95-105 | 140-150 | 0.5 |
| Interior composite alloy effectively stops the irradiation diameter | Xm2 | 83-87 | 132-138 | 0.5 |
| The annular gate pole stops width | Hm | 5-8 | 8-10 | 0.1 |
| The contrary translucent effective irradiation diameter of diode of leading | R D | 38-46 | 75-86 | 0.5 |
| The outer alloy barrier effective gradient angle of annular gate pole | α | 8-9 | 7.5-9 | 0.05 |
| Translucent alloy barrier layer cup depth | H D | 8-10 | 7-8.5 | 0.05 |
In concrete application example 3, the inventive method is applied to the asymmetric GCT chip in large safety operation area (HPT).Adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 85～95% of standard pressure drop, minority carrier life time deviation 5～10%.As shown in Figure 4, selection standard C type baffle plate, the irradiation standard metering carries out the low temperature double annealing, finishes actual sliver pressure drop and minority carrier life time and detects.Its applicable elements is: the asymmetric GCT in large safety operation area (HPT) of 4 inches and 6 inches, the difference of this baffle plate and A type baffle plate is: because the specific gate structure of HPT type GCT makes and not be used in the gate pole district select full barrier type design when baffle design.Simultaneously, outside annular gate pole in alloy barrier effective gradient angle and the annular gate pole alloy barrier effective gradient angle have significant difference.Following table 3 is the apparent size explanation of C type baffle plate:
Table 3
| ? | Symbol | 4 inches GCT term of reference units: length (mm) angle (°) | 6 inches GCT term of reference units: length (mm) angle (°) | Allow maximum deviation unit: length (mm) angle (°) |
| Outer anchor clamps annular diameter | Xm1 | 95-105 | 140-150 | 0.5 |
| Interior composite alloy effectively stops the irradiation diameter | Xm2 | 83-87 | 132-138 | 0.5 |
| The annular gate pole stops width | Hm | 2.5-4 | 4-6 | 0.1 |
| The central door polar diameter | Rm2 | 5-7 | 5-10 | 0.1 |
| The outer alloy barrier effective gradient angle of annular gate pole | α | 12-15 | 11-13 | 0.05 |
| Alloy barrier effective gradient angle in the annular gate pole | β | 7-9 | 6.5-8.5 | 0.05 |
In concrete application example 4, the inventive method is applied to the asymmetric GCT chip of symmetric form GCT or special applications.Adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h detects pressure drop and reaches 80～90% of standard pressure drop, minority carrier life time deviation 10～20%.As shown in Figure 5, selection standard D type baffle plate, the irradiation standard metering carries out the low temperature double annealing, finishes actual sliver pressure drop and minority carrier life time and detects.Its applicable elements is: the asymmetric GCT of 4 inches and 6 inches symmetric form GCT or special applications, the difference of this baffle plate and A type baffle plate is: adopt the little angle of counter-slope, be used for balance non-homogeneous small size according to dosage.Following table 4 is the apparent size explanation of D type baffle plate:
Table 4
| Formal parameter | Symbol | 4 inches GCT term of reference units: length (mm) angle (°) | 6 inches GCT term of reference units: length (mm) angle (°) | Allow maximum deviation unit: length (mm) angle (°) |
| Outer anchor clamps annular diameter | Xm1 | 95-105 | 140-150 | 0.5 |
| Interior composite alloy effectively stops the irradiation diameter | Xm2 | 83-87 | 132-138 | 0.5 |
| Annular gate pole depression stops width | Hm | 2.5-4 | 4-6 | 0.1 |
| Annular gate pole internal resistance gear effective irradiation diameter | Rm1 | 40-50 | 80-90 | 0.5 |
| The central door polar diameter | Rm2 | 5-7 | 5-10 | 0.1 |
| The outer reverse effective gradient of the alloy barrier angle of annular gate pole | α | 2-3 | 1.5-2.5 | 0.05 |
| The reverse effective gradient of alloy barrier angle in the annular gate pole | β | 1-2 | 1-1.5 | 0.05 |
Below only be preferred implementation of the present invention, protection scope of the present invention also not only is confined to above-described embodiment, and all technical schemes that belongs under the thinking of the present invention all belong to protection scope of the present invention.Should be pointed out that for those skilled in the art, the some improvements and modifications not breaking away under the principle of the invention prerequisite should be considered as protection scope of the present invention.
Claims (10)
1. a horizontal non-homogeneous electronic radiation method that improves GCT chip safety operation area is characterized in that, step is:
(1) the pre-radiation of GCT chip; By the minority carrier life time of control chip and the method for pressure drop, the GCT chip is carried out a pre-irradiation;
(2) once annealing after, carry out minority carrier life time and chip pressure drop the monitoring;
(3) adopt the composite alloy baffle plate, the heterogeneity of utilizing electron irradiation to penetrate the composite alloy baffle plate is carried out secondary irradiation and annealing to the GCT chip;
(4) again carry out minority carrier life time and chip pressure drop monitoring.
2. the horizontal non-homogeneous electronic radiation method of raising according to claim 1 GCT chip safety operation area, it is characterized in that, selection standard A type baffle plate carries out irradiation to asymmetric GCT chip, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 75～85% of standard pressure drop, minority carrier life time deviation 10～20%.
3. the horizontal non-homogeneous electronic radiation method of raising according to claim 2 GCT chip safety operation area is characterized in that:
For 4 inches asymmetric GCT, the apparent size of A type baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, the annular gate pole stops that width Hm is 2.5-4 mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 40-50 mm, the central door polar diameter is that Rm2 is 5-7, and the outer alloy barrier effective gradient angle α of annular gate pole is 8-9 °, and alloy barrier effective gradient angle β is 8-10 ° in the annular gate pole;
For 6 inches asymmetric GCT, the apparent size of A type baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, the annular gate pole stops that width Hm is 4-6mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 80-90 mm, the central door polar diameter is that Rm2 is 5-10, and the outer alloy barrier effective gradient angle α of annular gate pole is 7.5-9 °, and alloy barrier effective gradient angle β is 7-8.5 ° in the annular gate pole.
4. the horizontal non-homogeneous electronic radiation method of raising according to claim 1 GCT chip safety operation area, it is characterized in that, select the Type B baffle plate to carrying out irradiation against leading the GCT chip, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 65～75% of standard pressure drop, minority carrier life time deviation 10～20%.
5. the horizontal non-homogeneous electronic radiation method of raising according to claim 4 GCT chip safety operation area is characterized in that:
For 4 inches contrary GCT chips of leading, the apparent size of Type B baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, and annular gate pole stops that width Hm is 5-8 mm, the contrary translucent effective irradiation diameter of the diode R that leads
DBe 38-46 mm, the outer alloy barrier effective gradient angle α of annular gate pole is 8-9 °, translucent alloy barrier layer cup depth H
DBe 8-10 mm;
For 6 inches contrary GCT chips of leading, the apparent size of Type B baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, and annular gate pole stops that width Hm is 8-10mm, the contrary translucent effective irradiation diameter of the diode R that leads
DBe 75-86 mm, the outer alloy barrier effective gradient angle α of annular gate pole is 7.5-9 °, translucent alloy barrier layer cup depth H
DBe 7-8.5 mm.
6. the horizontal non-homogeneous electronic radiation method of raising according to claim 1 GCT chip safety operation area, it is characterized in that, select C type baffle plate that the asymmetric GCT chip of large safety operation area HPT is carried out irradiation, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 85～95% of standard pressure drop, minority carrier life time deviation 5～10%.
7. the horizontal non-homogeneous electronic radiation method of raising according to claim 6 GCT chip safety operation area is characterized in that:
For 4 inches asymmetric GCT chips of large safety operation area HPT, the apparent size of C type baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, the annular gate pole stops that width Hm is 2.5-4mm, central door polar diameter Rm2 is 5-7 mm, the outer alloy barrier effective gradient angle α of annular gate pole is 12-15 °, and alloy barrier effective gradient angle β is 7-9 ° in the annular gate pole;
For 6 inches asymmetric GCT chips of large safety operation area HPT, the apparent size of C type baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, the annular gate pole stops that width Hm is 4-6mm, central door polar diameter Rm2 is 5-10mm, the outer alloy barrier effective gradient angle α of annular gate pole is 11-13 °, and alloy barrier effective gradient angle β is 6.5-8.5 ° in the annular gate pole.
8. the horizontal non-homogeneous electronic radiation method of raising according to claim 1 GCT chip safety operation area, it is characterized in that, select D type baffle plate that the asymmetric GCT chip of symmetric form GCT or special applications is carried out irradiation, adopt 11MeV electron irradiation machine, pre-irradiation reference standard metering 80%, process annealing 12～24h, the chip monitoring pressure drop reaches 80～90% of standard pressure drop, minority carrier life time deviation 10～20%.
9. the horizontal non-homogeneous electronic radiation method of raising according to claim 8 GCT chip safety operation area is characterized in that:
For 4 inches GCT chips, the apparent size of D type baffle plate is: outer anchor clamps annular diameter Xm1 is 95-105 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 83-87 mm, the annular gate pole stops that width Hm is 2.5-4mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 40-50mm, central door polar diameter Rm2 is 5-7 mm, and the outer reverse effective gradient of the alloy barrier angle α of annular gate pole is 2-3 °, and the reverse effective gradient of alloy barrier angle β is 1-2 ° in the annular gate pole;
For 6 inches GCT chips, the apparent size of D type baffle plate is: outer anchor clamps annular diameter Xm1 is 140-150 mm, interior composite alloy stops that effectively irradiation diameter Xm2 is 132-138 mm, the annular gate pole stops that width Hm is 4-6mm, annular gate pole internal resistance gear effective irradiation diameter Rm1 is 80-90mm, central door polar diameter Rm2 is 5-10 mm, and the outer reverse effective gradient of the alloy barrier angle α of annular gate pole is 1.5-2.5 °, and the reverse effective gradient of alloy barrier angle β is 1-1.5 ° in the annular gate pole.
10. the horizontal non-homogeneous electronic radiation method of the described raising of any one GCT chip safety operation area according to claim 1～9, it is characterized in that, in the bottom of composite alloy baffle plate transparent catch is set, the GCT chip is positioned over the below of transparent catch, and at the another side of GCT chip the anode molybdenum sheet is set.
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| CN108364887A (en) * | 2018-02-09 | 2018-08-03 | 哈尔滨工业大学 | A method of inhibiting oxide trap positive charge formation in bipolar process electronic component |
| CN110610858A (en) * | 2018-06-15 | 2019-12-24 | 株洲中车时代电气股份有限公司 | Gate electrode current conversion thyristor and manufacturing method thereof |
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| CN108364887A (en) * | 2018-02-09 | 2018-08-03 | 哈尔滨工业大学 | A method of inhibiting oxide trap positive charge formation in bipolar process electronic component |
| CN108364887B (en) * | 2018-02-09 | 2020-06-09 | 哈尔滨工业大学 | Method for inhibiting formation of oxide trapped positive charges in electronic component |
| CN110610858A (en) * | 2018-06-15 | 2019-12-24 | 株洲中车时代电气股份有限公司 | Gate electrode current conversion thyristor and manufacturing method thereof |
| CN110610858B (en) * | 2018-06-15 | 2021-07-30 | 株洲中车时代半导体有限公司 | Gate electrode current conversion thyristor and manufacturing method thereof |
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