CN103065585A - Active matrix/organic light emitting diode (AMOLED) pixel drive circuit and capacitor structure of the same - Google Patents
Active matrix/organic light emitting diode (AMOLED) pixel drive circuit and capacitor structure of the same Download PDFInfo
- Publication number
- CN103065585A CN103065585A CN201210555023XA CN201210555023A CN103065585A CN 103065585 A CN103065585 A CN 103065585A CN 201210555023X A CN201210555023X A CN 201210555023XA CN 201210555023 A CN201210555023 A CN 201210555023A CN 103065585 A CN103065585 A CN 103065585A
- Authority
- CN
- China
- Prior art keywords
- amoled
- electrode
- switching transistor
- holding capacitor
- storage capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention aims to reduce the influences of a distorted display image caused by changes of voltages at two ends of a storage capacitor Cs and not to reduce aperture opening ratios of a pixel, and provides an active matrix/organic light emitting diode (AMOLED) pixel drive circuit and a capacitor structure of the AMOLED pixel drive circuit, wherein the influences are caused by charge injection effects and leakage currents of a switching transistor M1 of a AMOLED panel. One electrode of the storage capacitor Cs is connected with the positive electrode Vdd of a power line, and the other electrode of storage capacitor Cs is connected with a common port of the switch transistor M1 and a drive transistor M2. One electrode of the storage capacitor Cs1 is connected with the negative electrode Vs of the power line, and the other electrode of the storage capacitor Cs1 is connected with a common port of the switch transistor M1, the drive transistor M2 and the storage capacitor Cs. When the situations that the changes of the voltages at the two ends of the storage capacitor Cs happen and current is generated happen because of influences of the charge injection effects and the leakage currents, the AMOLED pixel drive circuit and capacitor structure of the AMOLED pixel drive circuit can effectively reduce degrees of display image distortion caused by the charge injection effects of the M1 and the leakage currents.
Description
Technical field
The present invention relates to AMOLED display technique field, be specifically related to the capacitor arrangement of a kind of AMOLED pixel-driving circuit and described pixel-driving circuit.
Background technology
The traditional 2T1C pixel-driving circuit that consists of based on P type TFT is as shown in Figure 1: among the figure, M1 is switching transistor, is used for control data line Vdata input; M2 is driving transistors, is used for the glow current of control OLED; Cs is holding capacitor, is used to the grid of driving transistors M2 biasing to be provided and to keep voltage.
Above-mentioned 2T1C pixel-driving circuit comprises two working hours at single frames in the time, as shown in Figure 2: the first period was that data line Vdata writes period t1, within this period, horizontal scanning line Vscan is low level, switching transistor M1 conducting this moment, data line Vdata is written on the holding capacitor Cs through the passage between the switching transistor M1 drain-source utmost point, and acts on simultaneously the grid of driving transistors M2, the M2 conducting, it is luminous to drive light emitting pixel unit OLED; The second period was kept period t2 for showing, within this period, horizontal scanning line Vscan is high level, and switching transistor M1 is in cut-off state, passage between its drain-source utmost point is turned off, the grid of data line Vdata and holding capacitor Cs(driving transistors M2) between passage be turned off.At this moment, requiring to think in the undemanding situation that holding capacitor Cs turn-offs the path of releasing that does not have electric charge because of switching transistor M1, can only end front state by hold switch transistor M1, the Cs both end voltage remains unchanged, M2 conducting and to keep light emitting pixel unit OLED luminous, until the horizontal scanning line Vscan in next frame cycle arrives, switching transistor M1 is strobed again.
But in practical engineering application, because switching transistor M1 itself exists charge injection effect and leakage current, consider that the voltage at Cs two ends after this actual conditions is that the grid potential of driving transistors M2 will be closed have no progeny at switching transistor M1 and As time goes on be changed because of the impact of M1 charge injection effect and leakage current, add the impact of the nonlinear characteristic of the IV curve (current-voltage relation curve) of driving transistors M2 and the IVL curve of light emitting pixel unit OLED (current-voltage-brightness relationship curve), the OLED brightness meeting of respective pixel unit changes within the above-mentioned frame period to some extent, and then causes easily showing pattern distortion.Be embodied in, switching transistor M1 closes and has no progeny, switching transistor M1 charge injection effect can cause data-signal (voltages at the holding capacitor Cs two ends) transition that write, as shown in Figure 3, voltage (voltage) is at time (time) 0m(S) and 20m (S) between the Y2=2.5431 (V) of being ordered by B drop to the Y3=2.4079(V that C is ordered), drop-off voltage dY2=-135.8mv.This variation will act on the grid of driving transistors M2 and further affect the glow current variation of light emitting pixel unit OLED, cause pattern distortion; As shown in Figure 4, voltage (voltage) is at time (time) 30u(S) and 35u (S) between Y1=2.5 (V) transition of being ordered by the A Y2=2.5437 (V) of ordering to B, transition voltage dY1=43.7mv; The data-signal (voltages at holding capacitor Cs two ends) that the leakage current of switching transistor M1 can cause having write falls.So in pixel-driving circuit, require to reduce as far as possible or eliminate the change in voltage at the charge injection effect of switching transistor M1 and the holding capacitor Cs two ends that leakage current causes.
Traditional a kind of way is the capacitance that increases the holding capacitor Cs of existing 2T1C image element circuit.Can effectively reduce the impact of switching transistor M1 charge injection effect and leakage current by increasing capacitance, but increase capacitance and need to increase in OLED pixel cell zone capacitor C s polar plate area, from the OLED pixel cell structure can find out that holding capacitor Cs and OLED light-emitting zone are distributed in pixel region side by side, increase holding capacitor Cs and certainly will have influence on the panel aperture opening ratio.
Summary of the invention
The objective of the invention is to change in order to reduce holding capacitor Cs both end voltage that the AMOLED panel causes because of charge injection effect and the leakage current of switching transistor M1 the impact of caused demonstration pattern distortion, simultaneously do not reduce pixel aperture ratio, proposed a kind of AMOLED pixel-driving circuit and capacitance structure thereof.
Technical scheme of the present invention is: a kind of AMOLED pixel-driving circuit comprises:
Switching transistor M1 comprises two input ends and an output terminal, and described two input ends are connected with horizontal scanning line Vscan with data line Vdata respectively;
Driving transistors M2, comprise two input ends and an output terminal, described two input ends are connected with the output terminal of the anodal Vdd of power lead and switching transistor M1 respectively, described output terminal is connected with the anode of Organic Light Emitting Diode D1, and the negative electrode of described Organic Light Emitting Diode D1 is connected with power lead negative pole Vss;
Holding capacitor Cs comprises two electrodes, and wherein an electrode is connected with the anodal Vdd of power lead, and another electrode is connected with the common port of driving transistors M2 with switching transistor M1;
It is characterized in that, also comprise,
Holding capacitor Cs1 comprises two electrodes, and wherein an electrode is connected with power lead negative pole Vss, and another electrode is connected with the common port of holding capacitor Cs with switching transistor M1, driving transistors M2.
A kind of storage capacitor structures of AMOLED pixel-driving circuit is characterized in that:
Three battery lead plates that comprise stacked distribution, two battery lead plates that wherein lay respectively at the upper and lower form the first holding capacitor Cs and the second holding capacitor Cs1 with the battery lead plate in middle layer respectively.
Further, a battery lead plate of described the upper and lower is positioned at the layer at the power lead negative pole Vss place of AMOLED dot structure, another battery lead plate is positioned at the layer at the anodal Vdd of the power lead place of AMOLED dot structure, and the battery lead plate in middle layer is positioned at the layer at the common port place of switching transistor and driving transistors.
The invention has the beneficial effects as follows: technical scheme of the present invention is by arranging a holding capacitor Cs1 between the common port of the switching transistor M1 of traditional 2T1C pixel-driving circuit and driving transistors M2 and power lead negative pole Vss, and pass through with the anodal Vdd layer of power lead, the common port layer of switching transistor M1 and driving transistors M2 and power lead negative pole Vss layer arrange three battery lead plates of holding capacitor Cs and Cs1, make impact because of switching transistor M1 charge injection effect and leakage current cause that holding capacitor Cs both end voltage changes and during generation current, the electric current that produces can discharge to reduce this impact by the capacitor Cs1 that sets up, and effectively reduces the distortion degree of the demonstration image that causes because of M1 charge injection effect and leakage current.
Description of drawings
Fig. 1 is existing 2T1C type AMOLED pixel-driving circuit schematic diagram;
Fig. 2 is the line scan signals synoptic diagram of AMOLED pixel;
Fig. 3 is the NET1 point potential change figure of existing 2T1C type AMOLED pixel-driving circuit under the M1 influence of leakage current;
Fig. 4 is the NET1 point potential change figure of existing 2T1C type AMOLED pixel-driving circuit under M1 charge injection effects;
Fig. 5 is AMOLED pixel-driving circuit schematic diagram of the present invention;
Fig. 6 is the capacitor arrangement synoptic diagram of AMOLED pixel-driving circuit of the present invention;
Fig. 7 is AMOLED pixel-driving circuit of the present invention and the NET1 point potential change comparison diagram of existing 2T1C type driving circuit under the M1 influence of leakage current;
Fig. 7-1 shows for the partial enlarged drawing at A place among Fig. 7;
Fig. 8 is AMOLED pixel-driving circuit of the present invention and the NET1 point potential change comparison diagram of existing 2T1C type driving circuit under M1 charge injection effects.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
As shown in Figure 5: a kind of AMOLED pixel-driving circuit of present embodiment comprises:
Switching transistor M1 is the P transistor npn npn, comprises two input ends and an output terminal, and described two input ends are connected with horizontal scanning line Vscan with data line Vdata respectively; Described two input ends are respectively grid G and the source S of M1, and described output terminal is specially the drain electrode of M1;
Driving transistors M2, be the P transistor npn npn, comprise two input ends and an output terminal, described two input ends are respectively source S and the grid G of M2, the source S of described M2 is connected with the output terminal drain D of the anodal Vdd of grid G and power lead and switching transistor M1, described output terminal drain D is connected with the anode of Organic Light Emitting Diode (OLED) D1, and the negative electrode of described Organic Light Emitting Diode D1 is connected with power lead negative pole Vss;
Holding capacitor Cs comprises two electrodes, and wherein an electrode is connected with the anodal Vdd of power lead, and another electrode is connected with the common port of driving transistors M2 with switching transistor M1;
Comprise that also holding capacitor Cs1 comprises two electrodes, wherein an electrode is connected with power lead negative pole Vss, and another electrode is connected with the common port of holding capacitor Cs with switching transistor M1, driving transistors M2.
Described switching transistor M1 is used for according to the control of horizontal scanning line Vscan data line Vdata being write holding capacitor Cs; Driving transistors M2 is used for flowing to according to the Control of Voltage at data line Vdata or holding capacitor Cs two ends the electric current of light emitting pixel unit OLED; Holding capacitor Cs is used for the storage data voltage and provides bias voltage to driving transistors M2.
Described capacitor Cs1, its appearance value equates with holding capacitor Cs.
As shown in Figure 6: the storage capacitor structures of a kind of AMOLED pixel-driving circuit of present embodiment,
Three battery lead plates that comprise stacked distribution, two pole plates that wherein lay respectively at the upper and lower form holding capacitor Cs and holding capacitor Cs1 with the pole plate in middle layer respectively.
Two battery lead plates of described the upper and lower, one of them battery lead plate is positioned at the layer 4 at the power lead negative pole Vss place of AMOLED dot structure, another battery lead plate is positioned at the layer at the anodal Vdd of the power lead place of AMOLED dot structure, and the battery lead plate in middle layer is positioned at the layer 3 at switching transistor 1 and driving transistors 2 common port places.
The specific works flow process of the described circuit of above-mentioned specific embodiment is as follows, with reference to the accompanying drawings 7, Fig. 7-1 and Fig. 8: t1 period, switching transistor M1 is according to the sweep signal conducting of horizontal scanning line Vscan, data line Vdata writes holding capacitor Cs and capacitor Cs1 by switching transistor M1, and act on the grid of driving transistors M2, driving transistors M2 conducting, corresponding the lighting of light emitting pixel unit OLED, above-mentioned state is maintained until the t2 period to begin; The t2 period, switching transistor is in off state, and driving transistors is kept conducting state under the effect of the voltage signal that memory capacitance is stored, and light emitting pixel unit OLED continues luminous.In t1 and the handoff procedure of t2 period, because the charge injection effect of switching transistor M1 can produce the electric current that the NET1 that flows through is ordered; Simultaneously, t2 in the period because the leakage current of switching transistor M1 also can produce the electric current that the NET1 that flows through is ordered.When above-mentioned electric current occurs, can be simultaneously to holding capacitor Cs and holding capacitor Cs1 charging or discharge, with capacitor Cs1 be not set compare, the voltage variety that NET1 is ordered will reduce, the appearance value of holding capacitor Cs1 size equates with holding capacitor Cs in the present embodiment, so the voltage variety that NET1 is ordered is with respect to reducing by half on the Circuit theory that capacitor Cs1 is not set.Whether the appearance value that one skilled in the art will appreciate that described storer Cs and holding capacitor Cs1 equates not affect the present invention program's enforcement, holding capacitor Cs and holding capacitor Cs1 appearance value equate to be an optimization technique parameter in the present embodiment, are inessential technical characterictic of the present invention.
Those of skill in the art recognize that embodiment described here is in order to help reader understanding's principle of the present invention, should to be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not break away from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (3)
1. AMOLED pixel-driving circuit comprises:
Switching transistor M1 comprises two input ends and an output terminal, and described two input ends are connected with horizontal scanning line Vscan with data line Vdata respectively;
Driving transistors M2, comprise two input ends and an output terminal, described two input ends are connected with the output terminal of the anodal Vdd of power lead and switching transistor M1 respectively, described output terminal is connected with the anode of Organic Light Emitting Diode D1, and the negative electrode of described Organic Light Emitting Diode D1 is connected with power lead negative pole Vss;
Holding capacitor Cs comprises two electrodes, and wherein an electrode is connected with the anodal Vdd of power lead, and another electrode is connected with the common port of driving transistors M2 with switching transistor M1;
It is characterized in that, also comprise,
Holding capacitor Cs1 comprises two electrodes, and wherein an electrode is connected with power lead negative pole Vss, and another electrode is connected with the common port of holding capacitor Cs with switching transistor M1, driving transistors M2.
2. the storage capacitor structures of an AMOLED pixel-driving circuit is characterized in that:
Three battery lead plates that comprise stacked distribution, two pole plates that wherein lay respectively at the upper and lower form holding capacitor Cs and holding capacitor Cs1 with the pole plate in middle layer respectively.
3. the storage capacitor structures of a kind of AMOLED pixel-driving circuit according to claim 2, two battery lead plates of described the upper and lower, one of them battery lead plate is positioned at the layer at the power lead negative pole Vss place of AMOLED dot structure, another battery lead plate is positioned at the layer at the anodal Vdd of the power lead place of AMOLED dot structure, and the battery lead plate in middle layer is positioned at the layer at the common port place of switching transistor and driving transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210555023.XA CN103065585B (en) | 2012-12-19 | 2012-12-19 | A kind of AMOLED pixel-driving circuit and capacitor arrangement thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210555023.XA CN103065585B (en) | 2012-12-19 | 2012-12-19 | A kind of AMOLED pixel-driving circuit and capacitor arrangement thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103065585A true CN103065585A (en) | 2013-04-24 |
| CN103065585B CN103065585B (en) | 2016-04-13 |
Family
ID=48108189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210555023.XA Expired - Fee Related CN103065585B (en) | 2012-12-19 | 2012-12-19 | A kind of AMOLED pixel-driving circuit and capacitor arrangement thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103065585B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383600A (en) * | 2020-04-28 | 2020-07-07 | 厦门天马微电子有限公司 | Pixel driving circuit, driving method, display panel and display device |
| WO2022252029A1 (en) * | 2021-05-31 | 2022-12-08 | 京东方科技集团股份有限公司 | Display substrate and display panel |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1599518A (en) * | 2003-09-16 | 2005-03-23 | 三星Sdi株式会社 | Image display and its display panel |
| CN2735379Y (en) * | 2004-09-11 | 2005-10-19 | 鸿富锦精密工业（深圳）有限公司 | Memory capacitor |
| US20050269958A1 (en) * | 2004-04-07 | 2005-12-08 | Choi Joon-Hoo | Display device and driving method thereof |
| CN1319039C (en) * | 2003-03-21 | 2007-05-30 | 友达光电股份有限公司 | Active matrix organic light emitting diode pixel circuit capable of automatically compensating current |
| CN101924122A (en) * | 2010-05-20 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix/organic light emitting display and manufacturing method thereof |
| JP2011002747A (en) * | 2009-06-22 | 2011-01-06 | Sony Corp | Display device, method of driving the same, and electronic device |
| CN101976545A (en) * | 2010-10-26 | 2011-02-16 | 华南理工大学 | Pixel drive circuit of OLED (Organic Light Emitting Diode) display and drive method thereof |
| CN102290027A (en) * | 2010-06-21 | 2011-12-21 | 北京大学深圳研究生院 | Pixel circuit and display device |
| CN102708786A (en) * | 2011-08-25 | 2012-10-03 | 京东方科技集团股份有限公司 | Active matrix organic light emitting diode (AMOLED) pixel unit driving circuit and method, pixel unit and display device |
| CN202996248U (en) * | 2012-12-19 | 2013-06-12 | 四川虹视显示技术有限公司 | AMOLED (active matrix/organic light emitting diode) pixel drive circuit and capacitor structure thereof |
-
2012
- 2012-12-19 CN CN201210555023.XA patent/CN103065585B/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319039C (en) * | 2003-03-21 | 2007-05-30 | 友达光电股份有限公司 | Active matrix organic light emitting diode pixel circuit capable of automatically compensating current |
| CN1599518A (en) * | 2003-09-16 | 2005-03-23 | 三星Sdi株式会社 | Image display and its display panel |
| US20050269958A1 (en) * | 2004-04-07 | 2005-12-08 | Choi Joon-Hoo | Display device and driving method thereof |
| CN2735379Y (en) * | 2004-09-11 | 2005-10-19 | 鸿富锦精密工业（深圳）有限公司 | Memory capacitor |
| JP2011002747A (en) * | 2009-06-22 | 2011-01-06 | Sony Corp | Display device, method of driving the same, and electronic device |
| CN101924122A (en) * | 2010-05-20 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix/organic light emitting display and manufacturing method thereof |
| CN102290027A (en) * | 2010-06-21 | 2011-12-21 | 北京大学深圳研究生院 | Pixel circuit and display device |
| CN101976545A (en) * | 2010-10-26 | 2011-02-16 | 华南理工大学 | Pixel drive circuit of OLED (Organic Light Emitting Diode) display and drive method thereof |
| CN102708786A (en) * | 2011-08-25 | 2012-10-03 | 京东方科技集团股份有限公司 | Active matrix organic light emitting diode (AMOLED) pixel unit driving circuit and method, pixel unit and display device |
| CN202996248U (en) * | 2012-12-19 | 2013-06-12 | 四川虹视显示技术有限公司 | AMOLED (active matrix/organic light emitting diode) pixel drive circuit and capacitor structure thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383600A (en) * | 2020-04-28 | 2020-07-07 | 厦门天马微电子有限公司 | Pixel driving circuit, driving method, display panel and display device |
| WO2022252029A1 (en) * | 2021-05-31 | 2022-12-08 | 京东方科技集团股份有限公司 | Display substrate and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103065585B (en) | 2016-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104850270B (en) | Driving method, drive circuit, touch module, panel and the device of touch module | |
| CN103839520B (en) | Pixel circuit, method for driving pixel circuit, display panel and display device | |
| CN109087610A (en) | AMOLED pixel-driving circuit, driving method and display panel | |
| CN103440840B (en) | A kind of display device and image element circuit thereof | |
| CN103927987B (en) | Image element circuit and display device | |
| CN103383836B (en) | Pixel circuit and driving method, display panel and display device of pixel circuit | |
| CN104252845A (en) | Pixel driving circuit, pixel driving method, display panel and display device | |
| CN103383834B (en) | A kind of image element circuit, display panel and display device | |
| CN107342049B (en) | The driving method of display panel and display panel | |
| CN104157238A (en) | Pixel circuit, driving method of pixel circuit, and display device adopting pixel circuit | |
| CN105427803A (en) | Pixel driving circuit, driving method thereof, display panel and display device | |
| CN104157239A (en) | Pixel circuit, driving method of pixel circuit, and display device adopting pixel circuit | |
| CN103413519A (en) | Pixel circuit and driving method, array substrate and display device thereof | |
| CN102682705B (en) | Active matrix organic light emitting diode (AMOLED) pixel driving circuit | |
| CN207425322U (en) | Pixel circuit, display base plate and display device | |
| CN102890910A (en) | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof | |
| CN203480806U (en) | Pixel circuit, array substrate and display device | |
| CN109801596A (en) | A kind of pixel circuit, display panel and its driving method | |
| CN102930820A (en) | Pixel drive circuit, display device and drive method thereof | |
| CN104217674A (en) | Pixel unit drive circuit and method, pixel drive circuit and AMOLED (active matrix/organic light-emitting diode) display device | |
| CN205507290U (en) | Touch -control display module assembly, touch -control display panel and device | |
| CN203480803U (en) | Pixel circuit, display panel, and display device | |
| CN104157241A (en) | Pixel drive circuit and drive method thereof and display device | |
| CN106803417A (en) | Pixel compensation circuit and driving method, display device | |
| CN104715725A (en) | Pixel circuit, display device and drive method of display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160413 Termination date: 20201219 |