CN103064207A - Conducting lead and manufacturing method thereof - Google Patents
Conducting lead and manufacturing method thereof Download PDFInfo
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- CN103064207A CN103064207A CN2013100120916A CN201310012091A CN103064207A CN 103064207 A CN103064207 A CN 103064207A CN 2013100120916 A CN2013100120916 A CN 2013100120916A CN 201310012091 A CN201310012091 A CN 201310012091A CN 103064207 A CN103064207 A CN 103064207A
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Abstract
The invention discloses a manufacturing method of a conducting lead. The method includes: forming a metal layer on the surface of a substrate, forming a metal oxide conducting layer on the surface of the metal layer, using a mask plate with a conducting lead pattern as a mask, patterning the metal oxide conducting layer by photoetching and etching to form a metal oxide conducting protective wire, patterning the metal layer to form a metal wire, and completing manufacture of the conducting lead. Under the protection of the metal oxide conducting protective wire, chances for moisture or basic ions to invade the metal wire are lowered greatly, chances of exposing the metal wire in air are lowered, and corrosion resistance of products is increased.
Description
Technical field
The invention belongs to integrated circuit fields, relate in particular to a kind of conductive lead wire and preparation method thereof.
Background technology
Informationized society more and more needs frivolous portable display device, and the most ripe current product has been exactly liquid crystal indicator (Liquid Crystal Display).Liquid crystal indicator generally includes for the display panels of display frame with for the circuit part that signal is provided to display panels.
Because the complicacy of the environment for use of LCD, its reliability is had higher requirement, but owing to itself manufacturing process complexity, production environment requires harsh, use gas, liquid of a great variety, make the yield rate of itself and reliability be faced with stern challenge.
Wherein, the challenge that faces of the yield rate of LCD and reliability is mainly reflected on the etching problem at conductive lead wire and lead-in wire via hole position.And the etching problem at conductive lead wire and lead-in wire via hole position not merely has the field of integrated circuit in the surface in other application on LCD, and the etching problem at conductive lead wire and lead-in wire via hole position is very serious on the impact of equipment.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of conductive lead wire and preparation method thereof, to avoid conductive lead wire and the generation of the etching problem at the via hole position that goes between.
A kind of method for making of conductive lead wire comprises:
Form metal level at a substrate surface;
Form the metal conductive oxide layer at described layer on surface of metal;
Take mask plate with conductive lead wire figure as mask, adopt photoetching process and etching technics patterning metal oxide conductive layer, form the metal conductive oxide protective wire, patterned metal layer forms metal wire, finishes the making of conductive lead wire.
Preferably, the making material of described metal level is Mo, AL, MoNb, Ti, Ta or Cr.
Preferably, adopt sputtering technology to form metal level at described substrate surface.
Preferably, the making material of described metal conductive oxide layer is ITO or IZO.
Preferably, adopt sputtering technology to form the metal conductive oxide layer at described layer on surface of metal.
Preferably, take mask plate with conductive lead wire figure as mask, adopt photoetching process and etching technics successively patterning metal oxide conductive layer and metal level, form the process of conductive lead wire, comprising:
Form photoresist layer on described metal conductive oxide layer surface;
Take mask plate with conductive lead wire figure as mask, adopt exposure and developing process at described photoresist layer formation conductive lead wire figure;
Take photoresist layer with conductive lead wire figure as mask, adopt etching technics to remove the metal conductive oxide layer material;
Take photoresist layer with conductive lead wire figure as mask, adopt etching technics to remove metal layer material, form conductive lead wire.
A kind of method for making of liquid crystal indicator comprises:
One transparency carrier is provided;
Adopt the described method of above-mentioned any one to form conductive lead wire at described transparency carrier.
A kind of conductive lead wire comprises:
Be arranged on the metal wire on the substrate surface;
Cover the lip-deep metal conductive oxide protective wire of described metal wire.
Preferably, the making material of described metal wire is Mo, AL, MoNb, Ti, Ta or Cr.
Preferably, the making material of described metal conductive oxide protective wire is ITO or IZO.
Conductive lead wire in a kind of liquid crystal indicator, described liquid crystal indicator is the described conductive lead wire of above-mentioned any one.
Compared with prior art; the method for making of conductive lead wire provided by the present invention comprises: form metal level at a substrate surface; form the metal conductive oxide layer at described layer on surface of metal; take mask plate with conductive lead wire figure as mask; adopt photoetching process and etching technics patterning metal oxide conductive layer, form the metal conductive oxide protective wire, patterned metal layer; form metal wire, finish the making of conductive lead wire.Then the top layer of described conductive lead wire is the metal conductive oxide protective wire, and the metal conductive oxide protective wire has preferably corrosion resistivity.The protection of metal conductive oxide protective wire has been arranged, greatly reduced the probability that aqueous vapor or alkali ion are invaded metal wire, and reduced metal wire and be exposed to airborne probability, improved the resistance to corrosion of product.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the required accompanying drawing that will use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the making process flow diagram of a kind of conductive lead wire of providing of the embodiment of the present application;
Fig. 2 is the structural representation of a kind of conductive lead wire of providing of the embodiment of the present application;
Fig. 3 is a kind of insulation course of providing of the embodiment of the present application, the structural representation that contact lead-wire is combined with conductive lead wire.
Embodiment
The etching problem at conductive lead wire and lead-in wire via hole position is very serious on the impact of equipment just as described in the background section.
The inventor studies discovery, existing making conductive lead wire method generally is directly to metal level being processed the formation conductive lead wire, and metal level can be exposed to air or plasma etc. and has in the environment of Among Corrosive Factors, so that the corrosion resistivity of conductive lead wire is lower, especially more serious at the etching problem at lead-in wire via hole position.
On the basis based on above-mentioned research, the embodiment of the invention provides a kind of conductive lead wire and preparation method thereof, and the method comprises:
Form metal level at a substrate surface;
Form the metal conductive oxide layer at described layer on surface of metal;
Take mask plate with conductive lead wire figure as mask, adopt photoetching process and etching technics patterning metal oxide conductive layer, form the metal conductive oxide protective wire, patterned metal layer forms metal wire, finishes the making of conductive lead wire.
The technical scheme that the embodiment of the invention provides be the metal conductive oxide protective wire on the top layer of described conductive lead wire, and the metal conductive oxide protective wire has preferably corrosion resistivity.The protection of metal conductive oxide protective wire has been arranged, greatly reduced the probability that aqueous vapor or alkali ion are invaded metal wire, and reduced metal wire and be exposed to airborne probability, improved the resistance to corrosion of product.
It more than is the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication device spare structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Embodiment one:
The present embodiment discloses a kind of method for making of conductive lead wire, as shown in Figure 1, comprising:
Step S11, form metal level at a substrate surface.Described substrate is insulated substrate, both can be the rigid insulation substrate, also can be the flexible insulation substrate.
Step S12, form the metal conductive oxide layer at described layer on surface of metal.
Step S13, take mask plate with conductive lead wire figure as mask, adopt photoetching process and etching technics patterning metal oxide conductive layer, form the metal conductive oxide protective wire, patterned metal layer forms metal wire, finishes the making of conductive lead wire.
Compared with prior art, the top layer of the conductive lead wire of conductive lead wire method for making made provided by the present invention is the metal conductive oxide protective wire, and the metal conductive oxide protective wire has preferably corrosion resistivity.The protection of metal conductive oxide protective wire has been arranged, greatly reduced the probability that aqueous vapor or alkali ion are invaded metal wire, and reduced metal wire and be exposed to airborne probability, improved the resistance to corrosion of product.
Embodiment two:
The present embodiment discloses the method for making of another kind of conductive lead wire, comprising:
Step S21, employing sputtering technology are forming metal level at a substrate surface.The making material of described metal level is preferably Mo, AL, MoNb, Ti, Ta or Cr.
Step S22, employing sputtering technology are forming the metal conductive oxide layer at described layer on surface of metal.The making material of described metal conductive oxide layer is preferably ITO or IZO.
Step S23, take mask plate with conductive lead wire figure as mask, adopt photoetching process and etching technics patterning metal oxide conductive layer, form the metal conductive oxide protective wire, patterned metal layer forms metal wire, finishes the making of conductive lead wire.
Specifically comprise:
Apply photoresist on described metal conductive oxide layer surface, form photoresist layer.
Take mask plate with conductive lead wire figure as mask, adopt exposure technology that described photoresist layer is exposed, form the conductive lead wire pattern at described photoresist layer, adopt again the photoresist outside the developing process removal conductive lead wire pattern, form the conductive lead wire figure at described photoresist layer.
Take photoresist layer with conductive lead wire figure as mask, adopt etching technics to remove the metal conductive oxide layer material, form the metal conductive oxide protective wire.Preferably, utilize oxalic acid solution, adopt wet-etching technology to etch away described metal conductive oxide layer material.
Take photoresist layer with conductive lead wire figure as mask, adopt etching technics to remove metal layer material, form metal wire, finish the making of conductive lead wire.
Compared with prior art; the top layer of the conductive lead wire of conductive lead wire method for making made provided by the present invention is the metal conductive oxide protective wire; and the metal conductive oxide protective wire has preferably corrosion resistivity; then reduce metal wire and be exposed to airborne probability, improved the resistance to corrosion of product.
Embodiment three:
The present embodiment discloses a kind of method for making of liquid crystal indicator, comprising:
One transparency carrier is provided, and described transparency carrier is preferably glass substrate.
Adopt the described method of above-described embodiment to form conductive lead wire at described transparency carrier.
Namely, form the first metal layer at described transparency carrier, form the metal conductive oxide layer on described the first metal layer surface, form photoresist layer on described metal conductive oxide layer surface, take mask plate with sweep trace figure as mask, adopt photoetching process and etching technics, the described metal conductive oxide layer of patterning and the first metal layer form sweep trace successively.Described sweep trace is made of the first metal material that is arranged on substrate surface and the metal conductive oxide material that covers described the first metal material surface.Wherein, described the first metal material is preferably Mo, AL, MoNb, Ti, Ta or Cr, and described metal conductive oxide material is preferably ITO or IZO.
Form gate insulator and silicon island at described sweep trace and transparency carrier surface.
Form the second metal level at described gate insulator and surface, silicon island, form the metal conductive oxide layer at described the second layer on surface of metal, form photoresist layer on described metal conductive oxide layer surface, take mask plate with data line figure as mask, adopt photoetching process and etching technics, the described metal conductive oxide layer of patterning and the second metal level form data line successively.Described data line is made of the second metal material that is arranged on silicon island and gate insulator surface and the metal conductive oxide material that covers described the second metal material surface.
Form passivation layer at described data line and gate insulator surface, and in described passivation layer, form via hole.
Form transparent electrode layer in described passivation layer surface, take mask plate with pixel electrode figure as mask, adopt the described transparent electrode layer of photoetching process patterning, form pixel electrode.Described pixel electrode is electrically connected with described data line by via hole.
Compared with prior art, liquid crystal indicator method for making provided by the present invention, in the process of making liquid crystal indicator, because described sweep trace is made of the first metal material that is arranged on substrate surface and the metal conductive oxide material that covers described the first metal material surface; Described data line is made of the second metal material that is arranged on silicon island and gate insulator surface and the metal conductive oxide material that covers described the second metal material surface.And the metal conductive oxide layer has preferably corrosion resistivity, and the metal level that has then reduced sweep trace and data line is exposed to airborne probability, has improved the resistance to corrosion of product.
In addition, can also adopt said method to make the conductive lead wires such as the peripheral leads of liquid crystal indicator, common line, not repeat them here.
Embodiment four:
A kind of conductive lead wire as shown in Figure 2, comprising:
Be arranged on a substrate 10 lip-deep metal wires 11;
Cover described metal wire 11 lip-deep metal conductive oxide protective wires 12.
Wherein, the making material of described metal wire 11 is preferably Mo, AL, MoNb, Ti, Ta or Cr, and the making material of described metal conductive oxide protective wire 12 is preferably ITO or IZO.
Compared with prior art, the top layer of the conductive lead wire that the present embodiment provides is the metal conductive oxide protective wire, and the metal conductive oxide protective wire has preferably corrosion resistivity.The protection of metal conductive oxide protective wire has been arranged, reduced metal wire and be exposed to airborne probability, improved the resistance to corrosion of product.
And; making with above-mentioned conductive lead wire basis in the process of contact via hole and contact lead-wire; as shown in Figure 3; surface at conductive lead wire forms insulation course 21; and adopt photoetching process at described insulation course 21 interior formation via holes; form afterwards contact lead-wire 22 on described insulation course 21 surfaces, described contact lead-wire 22 is electrically connected with the metal conductive oxide protective wire 12 of described conductive lead wire by via hole.In the process of making insulation course 21, via hole and contact lead-wire 22; tend to introduce the factor that plasma or aqueous vapor or alkali ion etc. can cause to the metal wire 11 of conductive lead wire corrosion; and metal wire 11 Surface mulchs of the conductive lead wire of the disclosed conductive lead wire method for making of the present embodiment made have metal conductive oxide protective wire 12; then can effectively reduce plasma or aqueous vapor or alkali ion etc. and invade the probability of metal wire 11 by via hole; reduce the corrosion probability of metal wire 11, improve the resistance to corrosion of product.
Embodiment five:
The present embodiment discloses a kind of liquid crystal indicator, and the conductive lead wire in the described liquid crystal indicator is the described conductive lead wire of above-described embodiment.
Then compared with prior art, the conductive lead wire in the disclosed liquid crystal indicator of the present embodiment has higher corrosion resistivity, and described liquid crystal indicator has higher reliability.
Need to prove, the method disclosed in the present and structure not only are applicable to the making of liquid crystal indicator, utilize the field of film metal lead-in wire for other integrated circuit etc., all can adopt the method disclosed in the present and structure.
Various piece adopts the mode of going forward one by one to describe in this instructions, and what each part stressed is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.
To the above-mentioned explanation of the disclosed embodiments, this area professional and technical personnel can be realized maybe will using the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, in other embodiments realization.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (11)
1. the method for making of a conductive lead wire is characterized in that, comprising:
Form metal level at a substrate surface;
Form the metal conductive oxide layer at described layer on surface of metal;
Take mask plate with conductive lead wire figure as mask, adopt photoetching process and etching technics patterning metal oxide conductive layer, form the metal conductive oxide protective wire, patterned metal layer forms metal wire, finishes the making of conductive lead wire.
2. described method according to claim 1 is characterized in that, the making material of described metal level is Mo, AL, MoNb, Ti, Ta or Cr.
3. described method according to claim 1 is characterized in that, adopts sputtering technology to form metal level at described substrate surface.
4. described method according to claim 1 is characterized in that, the making material of described metal conductive oxide layer is ITO or IZO.
5. described method according to claim 1 is characterized in that, adopts sputtering technology to form the metal conductive oxide layer at described layer on surface of metal.
6. described method according to claim 1 is characterized in that, forms the process of metal conductive oxide protective wire and metal wire, comprising:
Form photoresist layer on described metal conductive oxide layer surface;
Take mask plate with conductive lead wire figure as mask, adopt exposure and developing process at described photoresist layer formation conductive lead wire figure;
Take photoresist layer with conductive lead wire figure as mask, adopt etching technics to remove the metal conductive oxide layer material, form the metal conductive oxide protective wire;
Take photoresist layer with conductive lead wire figure as mask, adopt etching technics to remove metal layer material, form metal wire.
7. the method for making of a liquid crystal indicator is characterized in that, comprising:
One transparency carrier is provided;
Adopt the described method of claim 1 ~ 6 any one to form conductive lead wire at described transparency carrier.
8. a conductive lead wire is characterized in that, comprising:
Be arranged on the metal wire on the substrate surface;
Cover the lip-deep metal conductive oxide protective wire of described metal wire.
9. described conductive lead wire according to claim 8 is characterized in that making material Mo, AL, MoNb, Ti, Ta or the Cr of described metal wire.
10. described conductive lead wire according to claim 8 is characterized in that, the making material of described metal conductive oxide protective wire is ITO or IZO.
11. a liquid crystal indicator is characterized in that, the conductive lead wire in the described liquid crystal indicator is the described conductive lead wire of claim 8 ~ 10 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100120916A CN103064207A (en) | 2013-01-11 | 2013-01-11 | Conducting lead and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100120916A CN103064207A (en) | 2013-01-11 | 2013-01-11 | Conducting lead and manufacturing method thereof |
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| CN103064207A true CN103064207A (en) | 2013-04-24 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104020593A (en) * | 2014-05-30 | 2014-09-03 | 深圳市华星光电技术有限公司 | Array substrate, manufacturing method and liquid crystal display panel |
| CN105977151A (en) * | 2016-06-03 | 2016-09-28 | 京东方科技集团股份有限公司 | Array substrate and preparation method for the same, and display panel |
| CN106842729A (en) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | Graphene electrodes preparation method and liquid crystal display panel |
| CN106935511A (en) * | 2017-05-09 | 2017-07-07 | 京东方科技集团股份有限公司 | Thin film transistor (TFT), display base plate and preparation method thereof, display device |
| CN109343283A (en) * | 2018-10-16 | 2019-02-15 | 信利（惠州）智能显示有限公司 | Array substrate anti-corrosion protection structure, array substrate, display screen and guard method |
| CN109378297A (en) * | 2018-10-16 | 2019-02-22 | 信利（惠州）智能显示有限公司 | Array substrate anti-corrosion protection method, protection structure, array substrate and display screen |
| US10290659B2 (en) | 2016-03-22 | 2019-05-14 | Boe Technology Group Co., Ltd. | Methods for manufacturing display panels having reduced contact resistance, display panels and display devices |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104020593A (en) * | 2014-05-30 | 2014-09-03 | 深圳市华星光电技术有限公司 | Array substrate, manufacturing method and liquid crystal display panel |
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| US10290659B2 (en) | 2016-03-22 | 2019-05-14 | Boe Technology Group Co., Ltd. | Methods for manufacturing display panels having reduced contact resistance, display panels and display devices |
| CN105977151A (en) * | 2016-06-03 | 2016-09-28 | 京东方科技集团股份有限公司 | Array substrate and preparation method for the same, and display panel |
| CN106842729A (en) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | Graphene electrodes preparation method and liquid crystal display panel |
| CN106935511A (en) * | 2017-05-09 | 2017-07-07 | 京东方科技集团股份有限公司 | Thin film transistor (TFT), display base plate and preparation method thereof, display device |
| CN106935511B (en) * | 2017-05-09 | 2019-05-28 | 京东方科技集团股份有限公司 | Thin film transistor (TFT), display base plate and preparation method thereof, display device |
| CN109343283A (en) * | 2018-10-16 | 2019-02-15 | 信利（惠州）智能显示有限公司 | Array substrate anti-corrosion protection structure, array substrate, display screen and guard method |
| CN109378297A (en) * | 2018-10-16 | 2019-02-22 | 信利（惠州）智能显示有限公司 | Array substrate anti-corrosion protection method, protection structure, array substrate and display screen |
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Application publication date: 20130424 |