CN103064102B - Crystal arranging method and probe thereof - Google Patents
Crystal arranging method and probe thereof Download PDFInfo
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- CN103064102B CN103064102B CN201210586722.0A CN201210586722A CN103064102B CN 103064102 B CN103064102 B CN 103064102B CN 201210586722 A CN201210586722 A CN 201210586722A CN 103064102 B CN103064102 B CN 103064102B
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Abstract
The invention relates to a crystal arranging method and a probe thereof. A crystal is formed by array configuration of a plurality of crystal units, each crystal unit comprises a flicker crystal block and a flicker crystal block with a processed outgoing face, a portion of the processed outgoing face of the flicker crystal block is processed in a shading mode. The crystal arranging method comprises that upper and lower adjacent crystal units are arranged in a manner that the flicker crystal block and the processed flicker crystal block are mutually interval, and left and right adjacent crystal units are arranged in a manner that a shading face and a non-shading face of the outgoing face of the processed flicker crystal block are mutually interval. The crystal is adopted by the probe, and the probe comprises a silicon photomultiplier (SPM). Multiple signal units are arranged on the SPM, the signal units correspond to the crystal units one by one, and the signal units can receive light signals which are sent by the crystal units. The probe breaks through size limitation of signal units of an existing SPM, and under the condition that sizes of the signal units of the SPM are not reduced, and resolution ratio of the probe is greatly improved.
Description
Technical field
The present invention relates to photoelectron material field, particularly a kind of crystal arrangement method and detector thereof.
Background technology
Scintillation crystal is a kind of under the shock of X/ gamma-rays and ray high energy particle, and the crystal that is visible ray by the kinetic transformation of high energy particle is the critical component that CT in medical imaging and PET obtain image.
Positron emission tomography device (PET, Positron Emission Tomography) be after x-ray tomography imaging (X-CT) and magnetic resonance imaging (MRI) technology, Computed tomography is applied to the field of nuclear medicine and a kind of novel large medical equipment that grows up.It is utilize with the closely-related emissivity isotope of human body as
11c,
15o,
13n,
18f etc. can produce the nucleic of positron as tracer agent, by focus part, the picked-up of tracer agent are understood to focus functional metabolism state, thus the medical imaging device that disease is judged.
Complete positron emission tomography device (PET) is mainly made up of PET scanner and bevatron two parts.Cyclotron is used for producing the isotope of radiation positron, as
11c,
18f etc., PET scanner is emitted isotope in human body photon signal through annihilation reaction collects, and carries out data processing by computing machine, and does image reconstruction computing, obtains the metabolic images at the tested position of human body.
Detector is the critical component of PET scanner, this detector conventionally by receive gamma-rays and convert thereof into visible light signal scintillation crystal, receive the photomultiplier (SPM) of photon signal and form.The corresponding pixel of the minimum unit of next silicon photomultiplier of normal conditions, i.e. the corresponding SPM signal element of scintillation crystal bar, that is to say SPM signal element size restrictions the resolution of detector.
Summary of the invention
Technical matters to be solved by this invention is, the present situation that the resolution that breaks through current PET detector is determined by the size restrictions of SPM signal element conventionally, do not reducing under the prerequisite of SPM signal element size, by the processing of scintillation crystal being increased substantially to the resolution of PET detector.
The present invention realizes like this, a kind of crystal arrangement method is provided, crystal is made up of some crystal unit array arrangements, and crystal unit comprises a scintillation crystal piece and the treated scintillation crystal piece of an exit facet, and a part for the exit facet of treated scintillation crystal piece is through shading treatment; Crystal arrangement method comprises: neighbouring crystal unit is arranged in the mode of scintillation crystal piece and treated scintillation crystal piece space, and the adjacent crystal unit in left and right is arranged in the mode of shading surface on the exit facet of treated scintillation crystal piece and non-shading surface space.
Further, the half of treated scintillation crystal piece exit facet is through shading treatment.
Further, shading treatment is to adopt vacuum coating method to process the half exit facet of scintillation crystal piece, and the color of vacuum film is black.
Further, shading treatment is to adopt paint spraying method to process the half exit facet of scintillation crystal piece, and spraying color is black.
Further, shading treatment is to adopt polishing process to process the half exit facet of scintillation crystal piece, makes light in this face generation diffuse reflection.
Further, shading treatment is to adopt the first method of the rear paint spraying of polishing to process the half exit facet of scintillation crystal piece, and spraying color is black.
Further, shading treatment is a part of material that adopts the half exit facet of first removing scintillation crystal piece, forms a step, then on this step, fills lighttight material.
Further, scintillation crystal piece and treated scintillation crystal piece are to contain one or more in LYSO, Na:CsI, BGO, GSO, T1:NaI, BaF2, YAP, LSO and LaBr3, or the crystal of its combination in any.
The present invention also provides a kind of detector that adopts above-mentioned crystal to make, detector also comprises silicon photomultiplier, on silicon photomultiplier, be provided with some signal element, signal element is corresponding one by one with crystal unit, and signal element can receive the light signal being sent by crystal unit; Crystal is directly connected with silicon photomultiplier is bonding by UV glue.
Further, detector is PET detector.
Compared with prior art, the crystal of detector of the present invention is made up of some crystal unit array arrangements, crystal unit comprises a scintillation crystal piece and the treated scintillation crystal piece of an exit facet, and arranges in the mode of scintillation crystal piece and treated scintillation crystal piece space.Detector of the present invention also comprises silicon photomultiplier, is provided with some signal element on silicon photomultiplier, and signal element is corresponding one by one with crystal unit, and signal element can receive the light signal being sent by crystal unit.In the time that scintillation crystal piece receives X/ radiation gamma, scintillation crystal piece is luminous, signal element can detect the light signal of scintillation crystal piece, because some processed surface of scintillation crystal piece issued light of processing partially absorbs, therefore the light intensity of going out from exit facet is less than the light intensity of the scintillation crystal piece of unprocessed mistake, therefore signal element can be distinguished the light signal that different scintillation crystal pieces send.Like this, a signal element can produce two pixels, thereby improves exponentially the resolution of detector.
Brief description of the drawings
Fig. 1 is the schematic perspective view of the crystal arrangement method of prior art;
Fig. 2 is the floor map of crystal arrangement method of the present invention;
Fig. 3 is the solid intention of the embodiment one of treated scintillation crystal piece exit facet shading treatment in Fig. 2;
Fig. 4 is the solid intention of the embodiment five of treated scintillation crystal piece exit facet shading treatment in Fig. 2;
Fig. 5 is the schematic perspective view of detector of the present invention;
Fig. 6 is the decomposing schematic representation of Fig. 5.
Embodiment
In order to make technical matters to be solved by this invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Please refer to shown in Fig. 1, the crystal arrangement mode of prior art is: crystal 1 is made up of some crystal unit 2 array arrangements.
Please refer to shown in Fig. 2, crystal arrangement method of the present invention is: crystal 3 is made up of some crystal unit 4 array arrangements, crystal unit 4 comprises a scintillation crystal piece 5 and the treated scintillation crystal piece 6 of an exit facet, and a part for the exit facet 61 of treated scintillation crystal piece 6 is through shading treatment.Neighbouring crystal unit 4 is arranged with scintillation crystal piece 5 and the mode of treated scintillation crystal piece 6 spaces, and the adjacent crystal unit 4 in left and right is arranged with shading surface on the exit facet 61 of treated scintillation crystal piece 6 611 and the mode of non-shading surface 612 spaces.In the present embodiment, the half of the exit facet 61 of treated scintillation crystal piece 6 is through shading treatment.
In the present embodiment, scintillation crystal piece 5 and treated scintillation crystal piece 6 are for containing LYSO(cerium doped lutetiumyttrium orthosilicate, yttrium luetcium silicate), Na:CsI (sodium doped cesium iodide, cesium iodide), BGO(bismuth germinate, bismuth germanium oxide), GSO(cerium doped gadoliniumorthosilicate, gadolinium siliate), T1:NaI(thallium doped sodium iodide, sodium iodide), BaF2(barium fluoride, barium fluoride), YAP(cerium doped yttriumaluminate, yttrium aluminate), LSO(cerium doped lutetium oxyorithosilicate, silicic acid lutetium) and LaBr3(lanthanum bromide, lanthanum bromide) in one or more, or the crystal of its combination in any.
The part that the present invention provides the exit facet 61 of several treated scintillation crystal pieces 6 is carried out the embodiment of shading treatment:
Embodiment one: adopt vacuum coating method to process the exit facet 61 of scintillation crystal piece 6, vacuum film on half plated surface therein, the color of film is black, prevents that light signal from passing through, and plays interception.Exit facet 61 is processed rear generation shading surface 611 and non-shading surface 612.Please refer to shown in Fig. 3.
Embodiment two: adopt paint spraying method to process the exit facet 61 of scintillation crystal piece 6, half surface spraying therein, the color of spraying is black, prevents that light signal from passing through, and plays interception.Exit facet 61 is processed rear generation shading surface 611 and non-shading surface 612.Also please refer to shown in Fig. 3.
Embodiment three: adopt polishing process to process the exit facet 61 of scintillation crystal piece 6, make light in this face generation diffuse reflection, prevent light signal straight-line pass, play interception.
Embodiment four: adopt the first method of the rear paint spraying of polishing to process the exit facet 61 of scintillation crystal piece 6, spraying color is black, prevents that light signal from passing through, and plays interception.Exit facet 61 is processed rear generation shading surface 611 and non-shading surface 612.Also please refer to shown in Fig. 3.
Embodiment five: adopt a part of material of the exit facet 61 of first removing scintillation crystal piece 6', form a step, then fill lighttight material on this step, prevent that light signal from passing through, and plays interception.Exit facet 61 is processed rear generation shading surface 611' and non-shading surface 612'.Please refer to shown in Fig. 4.
Please refer to shown in Fig. 5 and 6, for a kind of detector 7 that adopts above-mentioned crystal 3 to make, detector 7 also comprises silicon photomultiplier 8, on silicon photomultiplier, be provided with some signal element 9, signal element 9 is corresponding one by one with crystal unit 4, and signal element 9 can receive the light signal being sent by crystal unit 4; Crystal 3 is directly connected with silicon photomultiplier 8 is bonding by UV glue.
In the present invention, detector 7 is PET detector.In the time that crystal unit 4 receives X/ radiation gamma, crystal unit 4 is luminous, and silicon photomultiplier 8 can detect the light signal of crystal unit 4.Due to treated scintillation crystal piece 6 issued lights, some is partially absorbed by the shading surface 611 that on exit facet 61, blacking was processed, therefore the light intensity of going out from exit facet 61 is less than the light intensity of the scintillation crystal piece 5 of unprocessed mistake, therefore silicon photomultiplier 8 can be distinguished the light signal that different scintillation crystal pieces send.Like this, the minimum signal unit 9 of a silicon photomultiplier 8 can produce two pixels, thereby in the situation that cost is constant, can increase substantially the resolution of PET detector.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a crystal arrangement method, described crystal is made up of some crystal unit array arrangements, described crystal unit comprises a scintillation crystal piece and the treated scintillation crystal piece of an exit facet, a part for the exit facet of described treated scintillation crystal piece is through shading treatment, it is characterized in that, described crystal arrangement method comprises: neighbouring described crystal unit is arranged in the mode of scintillation crystal piece and treated scintillation crystal piece space, the adjacent described crystal unit in left and right is arranged in the mode of shading surface on the exit facet of treated scintillation crystal piece and non-shading surface space.
2. crystal arrangement method as claimed in claim 1, is characterized in that, the half of described treated scintillation crystal piece exit facet is through shading treatment.
3. crystal arrangement method as claimed in claim 2, is characterized in that, described shading treatment is to adopt vacuum coating method to process the half exit facet of described scintillation crystal piece, and the color of vacuum film is black.
4. crystal arrangement method as claimed in claim 2, is characterized in that, described shading treatment is to adopt paint spraying method to process the half exit facet of described scintillation crystal piece, and spraying color is black.
5. crystal arrangement method as claimed in claim 2, is characterized in that, described shading treatment is to adopt polishing process to process the half exit facet of described scintillation crystal piece, makes light in this face generation diffuse reflection.
6. crystal arrangement method as claimed in claim 2, is characterized in that, described shading treatment is to adopt the first method of the rear paint spraying of polishing to process the half exit facet of described scintillation crystal piece, and spraying color is black.
7. crystal arrangement method as claimed in claim 2, is characterized in that, described shading treatment is a part of material that adopts the half exit facet of first removing described scintillation crystal piece, forms a step, then on this step, fills lighttight material.
8. crystal arrangement method as claimed in claim 1, it is characterized in that, described scintillation crystal piece and treated scintillation crystal piece are to contain one or more in LYSO, Na:CsI, BGO, GSO, T1:NaI, BaF2, YAP, LSO and LaBr3, or the crystal of its combination in any.
9. a detector that adopts crystal arrangement method claimed in claim 1 to make, it is characterized in that, described detector also comprises silicon photomultiplier, on described silicon photomultiplier, be provided with some signal element, described signal element is corresponding one by one with crystal unit, and described signal element receives the light signal being sent by described crystal unit; Described crystal is directly connected with described silicon photomultiplier is bonding by UV glue.
10. detector as claimed in claim 9, is characterized in that, described detector is PET detector.
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| CN104252005A (en) * | 2013-06-26 | 2014-12-31 | 北京大基康明医疗设备有限公司 | PET detector module |
| CN104166151B (en) * | 2014-07-21 | 2017-04-12 | 北京永新医疗设备有限公司 | PET detection module, PET detector and PET system |
| US10067245B2 (en) | 2015-12-31 | 2018-09-04 | Shanghai United Imaging Healthcare Co., Ltd. | Apparatus, method and system for sparse detector |
| TWI655452B (en) * | 2017-10-24 | 2019-04-01 | 行政院原子能委員會核能硏究所 | Energy resolved x-ray imaging detector |
| CN110568470B (en) * | 2019-08-29 | 2020-12-08 | 华中科技大学 | Method for optimizing discrete crystal layout in polyhedral detector |
| CN110660464B (en) * | 2019-10-29 | 2020-10-27 | 浙江明峰智能医疗科技有限公司 | Intelligent daily quality control method and system for LYSO crystal PET |
| CN111487666B (en) * | 2020-05-09 | 2022-08-19 | 中国科学院高能物理研究所 | Positron annihilation angle correlation measurement method |
| CN112782746B (en) * | 2021-02-22 | 2022-09-20 | 中国电子科技集团公司第二十六研究所 | Method for manufacturing vacuum centrifugal scintillation crystal array |
| CN113786209A (en) * | 2021-09-16 | 2021-12-14 | 华中科技大学 | Polyhedral brain PET system with ultrahigh sensitivity |
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| JPH0627847B2 (en) * | 1989-12-15 | 1994-04-13 | 浜松ホトニクス株式会社 | Radiation detector |
| US5300782A (en) * | 1992-06-26 | 1994-04-05 | General Electric Company | Gamma ray detector for pet scanner |
| US6552348B2 (en) * | 1999-12-14 | 2003-04-22 | Regents Of The University Of California | Apparatus and method for breast cancer imaging |
| US6749761B1 (en) * | 2000-10-10 | 2004-06-15 | Cti Pet Systems, Inc. | Method for producing a high resolution detector array |
| CN101182133A (en) * | 2007-10-15 | 2008-05-21 | 苏州工业园区派特科技发展有限公司 | Optical fibre and PET explorer employing the same |
| CN101644780A (en) * | 2008-08-04 | 2010-02-10 | 北京大学 | Scintillation crystal array detecting device |
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Effective date of registration: 20180213 Address after: 528437 the 1 and 2 floors of building A3 6, Shennong Road, Zhongshan, Guangdong Province Patentee after: Zhongshan Ming Feng Medical Instrument Co., Ltd. Address before: 311215 Building No. 1, No. 99, No. 99, Xiaoshan Economic Development Zone, Xiaoshan District, Hangzhou City, Zhejiang Patentee before: FMI Technologies Inc. |
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Address after: 528437 First and Second Floors of A3 Building No.6 Shennong Road, Zhongshan Torch Development Zone, Guangdong Province Patentee after: Guangdong Mingfeng Medical Technology Co.,Ltd. Address before: 528437 First and Second Floors of A3 Building No.6 Shennong Road, Zhongshan Torch Development Zone, Guangdong Province Patentee before: ZHONGSHAN MINFOUND MEDICAL EQUIPMENT Co.,Ltd. |
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