CN103063976B - A kind of use two way classification that silicon through hole is carried out the method and system of fault detect - Google Patents
A kind of use two way classification that silicon through hole is carried out the method and system of fault detect Download PDFInfo
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Abstract
The invention discloses and a kind of use two way classification that silicon through hole is carried out the method and system of fault detect, described method includes: test zone is divided by the distribution previously according to fault silicon through hole, and test zone is divided into central area, marginal area and defective region；Being grouped silicon through hole, often group includes several silicon through hole, successively by detecting probe contact often group silicon through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and analyzes the most faulty silicon through hole in each group, and test zone residing for failure judgement silicon through hole；The group using two way classification silicon faulty to central area through hole detects again, and traveling probe position carries out assignment test, the position of location fault silicon through hole.The present invention can save technology difficulty and cost with the failure condition of the little silicon through hole of detection area.Compared with testing silicon through hole one by one with probe, testing efficiency being greatly improved, solve silicon through hole cannot be by the situation of probe detection when area is the least simultaneously.
Description
Technical field
The present invention relates to the three-dimensional packaging technology in integrated circuit, in particular a kind of employing two way classification is to silicon through hole
Carry out the method and system of fault detect.
Background technology
Along with the development of integrated circuit, integrated level is more and more higher, and technological level reduces increasingly, the time delay of metal interconnecting wires and
Power consumption is being continuously increased, and has had a strong impact on the development of integrated technology.In order to promote the development of semiconductor industry, there has been proposed three
The concept of dimension chip technology.Three-dimensional chip technology by multiple unencapsulated wafer stacked on top together, and can use silicon through hole
(Through Silicon Via-TSV) connects as the signal between stacked wafer.This technology not only reduce chip
Area, the introducing of silicon through hole simultaneously shortens the connecting line in chip greatly, thus reduces signal delay, improves performance also
Reduce power consumption.Silicon through hole is the key technology that three dimensional integrated circuits carries out perpendicular interconnection, and insulating barrier circuit defect and salient point are opened
Road defect is two kinds of common failure modes of silicon through hole.At present, it is proposed that various test, main method is to build self-test
Circuit is tested.This method of testing has had the circuit model of a variety of comparative maturity, but due to from test circuit built
Exist and add manufacturing process difficulty, improve testing cost.Another kind of main method is to be transferred out silicon through hole by interposer
Testing, owing to silicon through hole cellar area is little, the spacing in hole is less, is difficult to switching, and technical costs is high.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
The technical problem to be solved in the present invention is, for the drawbacks described above of prior art, it is provided that a kind of employing two way classification
Silicon through hole is carried out the method and system of fault detect, solves the problem that in prior art, silicon through hole process fault detection is loaded down with trivial details,
Making silicon through hole fault detect easier, detection efficiency is higher.
It is as follows that the present invention solves the technical scheme that technical problem used:
A kind of method using two way classification that silicon through hole is carried out fault detect, wherein, including step:
Test zone is divided by A, distribution previously according to fault silicon through hole, and test zone is divided into center
Territory, marginal area and defective region；
B, being grouped all silicon through holes that need to detect, often group includes several silicon through hole, test is used successively
Probe contact often group silicon through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and it is logical to analyze the most faulty silicon in each group
Hole, and test zone residing for failure judgement silicon through hole；
C, the group of employing two way classification silicon faulty to central area through hole detect again, and traveling probe position carries out fixed
Bit test, the position of location fault silicon through hole, and export fault type.
The described method using two way classification that silicon through hole is carried out fault detect, wherein, described step A farther includes:
Distribution function P(x according to fault silicon through hole) test zone is divided:
Central area meets condition:；
Marginal area meets condition:；
Defective region meets condition:；
Wherein, x is that in test zone, any point is to the distance at center, and r is the radius of detecting probe, and M is set
The qualified threshold value of fault silicon number of openings.
The described method using two way classification that silicon through hole is carried out fault detect, wherein, described step A also includes:
A1, in advance statistics silicon through hole print are in the silicon number of through-holes of central area, marginal area, according to described silicon through hole
The fault silicon through hole distribution function of print calculates the testing efficiency of fault silicon through hole, and when drawing testing efficiency maximum probe is once
The contact number of detection silicon through hole.
The described method using two way classification that silicon through hole is carried out fault detect, wherein, described step A1 farther includes:
Calculate at the testing time of central area fault silicon through hole by below equation:
And the testing time by below equation calculating edge region fault silicon through hole:
And the testing time of total fault silicon through hole is calculated by below equation:
Above-mentioned formula is carried out derivation draw,
When from which further following that testing efficiency maximum, probe once detects the contact number of silicon through hole, for:
Wherein, y1 represents the testing time at central area fault silicon through hole, and y2 represents edge region fault silicon through hole
Testing time, Y represents the testing time of total fault silicon through hole, and N is silicon number of openings total on silicon through hole print, and area is
S=kN, k are constant, and n is the contact number of probe detection silicon through hole, the radius in region, N centered by R1Centered by region silicon lead to
Hole number, N2For the silicon number of openings of marginal area, and π R2=kN1。
The described method using two way classification that silicon through hole is carried out fault detect, wherein, described probe detection silicon through hole
Contact number is any one in 3 to 8.
The described method using two way classification that silicon through hole is carried out fault detect, wherein, uses two way classification in described step C
Again the detailed process detected the group of faulty silicon through hole is:
When detecting the group of center area fault silicon through hole, traveling probe position carries out assignment test, makes to connect every time
The half of this group silicon number of through-holes that this group silicon number of through-holes touched once contacts before being, until finding out the position of fault silicon through hole
Put.
The described method using two way classification that silicon through hole is carried out fault detect, wherein, described step C also includes:
When C1, group to edge area fault silicon through hole detect, traveling probe position carries out assignment test, makes every time
This group silicon number of through-holes of contact is than front few one of this group silicon number of through-holes once contacted, until finding the position of fault silicon through hole
Put.
A kind of using two way classification that silicon through hole carries out the system of fault detect, wherein, described system includes:
Pre-set module, test zone is divided, by test zone for the distribution previously according to fault silicon through hole
It is divided into central area, marginal area and defective region；
Packet detection module, for being grouped all silicon through holes that need to detect, often group includes several silicon and leads to
Hole, successively by detecting probe contact often group silicon through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and analyzes in each group
The most faulty silicon through hole, and test zone residing for failure judgement silicon through hole；
Fault silicon through hole locating module, for using the group of two way classification silicon faulty to central area through hole again to examine
Surveying, traveling probe position carries out assignment test, the position of location fault silicon through hole, and exports fault type.
The described system using two way classification that silicon through hole carries out fault detect, wherein, described fault silicon through hole location mould
When block is additionally operable to detect the group of edge area fault silicon through hole, traveling probe position carries out assignment test, makes to connect every time
This group silicon number of through-holes touched is than front few one of this group silicon number of through-holes once contacted, until finding the position of fault silicon through hole
Put.
Employing two way classification provided by the present invention carries out the method and system of fault detect to silicon through hole, it is achieved to area
Silicon through hole failure condition little, closely spaced is tested, and improves testing efficiency, it is possible to effectively facilitate sending out of three-dimensional packaging technology
Exhibition.
Accompanying drawing explanation
Fig. 1 is that the two way classification that uses that the present invention provides carries out the method flow diagram of fault detect to silicon through hole.
Fig. 2 is that the two way classification that uses that the present invention provides carries out the one of test zone in the method for fault detect to silicon through hole
Preferably divide schematic diagram.
Fig. 3 is that the two way classification that uses that the present invention provides carries out the silicon of a test sample in the method for fault detect to silicon through hole
Through hole breaks down at different test zones the data statistics schematic diagram of probability.
Fig. 4 is the fault scatter chart drawn according to the data statistics schematic diagram shown in Fig. 3.
Fig. 5 is a kind of preferred simulation curve chart of different size of test sample testing efficiency.
Fig. 6 is the simulation curve figure of same size test sample testing efficiency in the case of different distributions function.
Fig. 7 is that the two way classification that uses that the present invention provides carries out the system structure schematic diagram of fault detect to silicon through hole.
Detailed description of the invention
The present invention uses bigger probe contacting multiple silicon through hole once detecting when simultaneously.First to multiple silicon
The overall impedance of through hole, capacitive reactance characteristic are analyzed, and the impedance of reference standard silicon through hole, capacitive reactance characteristic judge whether that this group silicon leads to
Faulty silicon through hole in hole.Then probe search coverage is moved and reorientate, gradually all silicon through holes are measured.Finally
Use two way classification that the group of faulty silicon through hole is analyzed, orient out of order through hole, and obtain out of order particular type,
Such as short circuit, open circuit.In the case of characteristic test needs, draw defect type also by detailed comparisons's standard silicon through hole, as
Bubbles or impurity.
For making the purpose of the present invention, technical scheme and advantage clearer, clear and definite, develop simultaneously embodiment pair referring to the drawings
The present invention further describes.Should be appreciated that specific embodiment described herein, and need not only in order to explain the present invention
In limiting the present invention.
Seeing Fig. 1, Fig. 1 is that the two way classification that uses that the present invention provides carries out the method flow diagram of fault detect to silicon through hole.
Test zone is divided by step S100, distribution previously according to fault silicon through hole, is divided into by test zone
Central area, marginal area and defective region.
Wherein, owing on test sample, the distribution situation of silicon through hole is different, the fault silicon through hole near center is very
Few, from center more away from fault silicon through hole the most, therefore, in order to more accurately fault silicon through hole be detected, need to be to survey
Examination region divides, to detect regional respectively respectively.Division to test zone is according to fault silicon through hole
Distribution function be determined.Described distribution function P(x) with production technology manufacture process be correlated with.Fault distribution be by
In in the fabrication process, the factor such as the defect of technique, production equipment, manufacture process causes.Silicon through hole on every kind of silicon through hole print
Distribution function be all known, and be different from.Setting x as any point in test cell to the distance at center, r is test
The radius of probe, M is the qualified threshold value of the fault silicon number of openings set.The partitioning standards of zones of different is as follows in testing:
In central area, fault silicon number of openings is few, is distributed sparse, uses probe single to detect multiple faults in central area
Silicon through hole will not once contain multiple fault silicon through hole, therefore uses below equation to divide central area:,
Edge region, the distribution of fault silicon through hole is more, and distribution opposed central regions is the most intensive, therefore uses following public
Formula division marginal area:,
In defective region, owing to when mistake the silicon through hole using probe single to detect this region, breaking down
The quantity of silicon through hole can exceed qualified threshold values M, therefore, abandons the test to this region, it is believed that it is substandard product, and uses
The defective region of below equation division:.A kind of test sample as shown in Figure 2, wherein, during 1 represents
Heart region, 2 represent marginal area, and 3 represent defective region, and 4 represent the search coverage of probe.
Citing below illustrates.In a kind of test sample shown in Figure 3, silicon through hole occurs at different test zones
The data statistics of probability of malfunction, as seen from Figure 3 in different test zone silicon through hole fault contingent probability distribution feelings
Condition, according to the probability distribution situation of fault silicon through hole, can simulate the curve chart of fault distribution, as shown in Figure 4 by emulation.
In it can be seen that, the distance at test zone center is the most remote, the distribution function P(x of fault silicon through hole) probability the biggest.
Before starting to test silicon through hole print, need to select suitable probe, different probes detects every time
Silicon number of through-holes is not quite similar, and selects suitable probe that testing efficiency can be made to reach maximum, reduces testing time.Therefore to
Selecting suitable probe, the present invention also performs step S101: statistics silicon through hole print is in central area, marginal area in advance
Silicon number of through-holes, calculates the testing efficiency of fault silicon through hole according to the fault silicon through hole distribution function of described silicon through hole print, and
When drawing testing efficiency maximum, probe once detects the contact number of silicon through hole.
For the testing efficiency of different test zones, it is to become to amass according to test required time every time and testing time
Go out.First testing time is calculated, specifically, by calculating the test time at central area fault silicon through hole by below equation
Number:
And the testing time by below equation calculating edge region fault silicon through hole:
And the testing time of total fault silicon through hole is calculated by below equation:
Above-mentioned formula is carried out derivation draw,
Owing to test required time is essentially identical every time, therefore, when testing time is minimum, testing efficiency is also
Greatly, therefore by above-mentioned derivation formula, when can from which further follow that testing efficiency maximum, probe once detects the contact of silicon through hole
Number, for:
Wherein, y1 represents the testing time at central area fault silicon through hole, and y2 represents edge region fault silicon through hole
Testing time, Y represents the testing time of total fault silicon through hole, and N is silicon number of openings total on silicon through hole print, and area is
S=kN, K are constant, and n is the contact number of probe detection silicon through hole, the radius in region, N centered by R1Centered by region silicon lead to
Hole number, N2For the silicon number of openings of marginal area, and π R2=kN1。
Citing below illustrates.As it is shown in figure 5, Fig. 5 is according to different size of test sample, i.e. comprises different silicon and lead to
The test sample of hole number, when choosing different probe size, the simulation curve of testing efficiency, the silicon through hole of three kinds of test samples
Quantity is 1000,500 and 100, and as can be seen from the figure the silicon number of openings of three kinds of test samples is different, single probe test
Number of times is different, and for each test sample, the quantity that single probe once contacts silicon through hole is different, eldest brother's probe
Testing time is the most different.
The most as shown in Figure 6, Fig. 6 is at same size test sample, comprises identical silicon number of openings and tests, in difference
The simulation curve of the testing efficiency in the case of distribution function, wherein the fault silicon number of openings in region centered by F in figure.From Fig. 6
In it can be seen that the fault silicon number of openings of central area differs, single probe once contacts silicon number of openings and differs, single
The testing time of individual probe also differs.
In conjunction with quantity and the distribution function of silicon through hole, drawn by great many of experiments statistics, single probe detection silicon through hole
Contact number be advisable with 3 to 8, now testing efficiency is higher.Tending towards stability more than 8 curves, testing efficiency improves not clear
Aobvious.
Step S200, being grouped all silicon through holes that need to detect, often group includes several silicon through hole, successively will
Detecting probe contact often group silicon through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and analyzes whether there is event in each group
Barrier silicon through hole, and test zone residing for failure judgement silicon through hole；
Wherein, by the probe selected, all silicon through holes in test sample are detected, and silicon through hole is divided
Group is based on the contact number of probe one-time detection silicon through hole, often the group number of silicon through hole and connecing of probe one-time detection silicon through hole
Touch number equal.By impedance and the capacitive reactance characteristic of silicon through holes all in this probe in detecting test sample, by each silicon through hole
Impedance and capacitive reactance feature, can be easy to analyze silicon through hole the most faulty, and fault type can also be exported, such as open
Road or short circuit etc..At the same time it can also be judge the test zone residing for fault silicon through hole, it is judged that standard is: when this silicon leads to
The position in hole is eligibleTime, this silicon through hole is in central area；When the position of this silicon through hole meets bar
PartTime, this silicon through hole is in marginal area；When the position of this silicon through hole is eligibleTime, this silicon through hole is in defective region.
Step S300, the group of employing two way classification silicon faulty to central area through hole detect again, traveling probe position
Put and carry out assignment test, the position of location fault silicon through hole, and export fault type.
Wherein, step S300 the most also includes:
Step S301, when the group of center area fault silicon through hole is detected, traveling probe position carries out location and surveys
Examination, makes the half of this group silicon number of through-holes once contacted before this group silicon number of through-holes every time contacted is, until finding out fault
The position of silicon through hole.Data can be tested after test terminates and be analyzed can be derived that particular location and the generation of fault through hole
The type of fault.Adopt two way classification central area carries out the detection of fault silicon through hole to be greatly reduced detection number of times, improve detection
Efficiency.
When step S302, group to edge area fault silicon through hole detect, traveling probe position carries out assignment test,
Make this group silicon number of through-holes every time contacted than front few one of this group silicon number of through-holes once contacted, until find fault silicon lead to
The position in hole.Detection to edge area fault silicon through hole uses common factor mode, it is assumed that test contact silicon number of through-holes is n every time
Individual, after moving, test zone occurs simultaneously with test zone last time every time should be n-1 silicon through hole, repeats n time, and the most each silicon through hole is equal
By test leakage once.Test terminate after, by test data be analyzed process can be out of order through hole particular location with
And produce the type of fault.
Owing to defective area fault through hole is too many, then not detection.
The method is tested mainly for silicon through hole densely distributed, that cellar area is little, uses probe once to contact many
Individual silicon through hole, through repeatedly testing, draws under the concrete formula of testing time and the optimal situation of selection contact silicon via count
Probe area, to test result utilize the impedance operator of silicon through hole implant and capacitive reactance characteristic that test result is analyzed
Process, to determine fault silicon through hole concrete in test silicon through hole and fault type.The method can efficiently solve because of silicon
The little problem being not easy detection of the area of through hole, reduces the testing time, improves testing efficiency.The testing algorithm of the present invention is all right
Optimize further, in order to test result is analyzed more accurately, promote the further development of three-dimensional integration technology.
Method silicon through hole being carried out fault detect based on above-mentioned employing two way classification, present invention also offers a kind of employing two
Point-score carries out the system of fault detect to silicon through hole, as it is shown in fig. 7, described system includes:
Pre-set module 10, test zone is divided, by test section for the distribution previously according to fault silicon through hole
Territory is divided into central area, marginal area and defective region；
Packet detection module 20, for being grouped all silicon through holes that need to detect, often group includes several silicon
Through hole, successively by detecting probe contact often group silicon through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and analyzes each group
In the most faulty silicon through hole, and test zone residing for failure judgement silicon through hole；
Fault silicon through hole locating module 30, for using the group of two way classification silicon faulty to central area through hole to carry out again
Detection, traveling probe position carries out assignment test, the position of location fault silicon through hole, and exports fault type.
Further, described fault silicon through hole locating module 30 is additionally operable to examine the group of edge area fault silicon through hole
During survey, traveling probe position carries out assignment test, makes this group silicon number of through-holes every time contacted than front this group silicon once contacted
Few one of number of through-holes, until finding the position of fault silicon through hole.
In sum, what the present invention provided uses two way classification that silicon through hole carries out the method and system of fault detect, passes through
Test zone is divided by the distribution previously according to fault silicon through hole, and test zone is divided into central area, marginal area
With defective region；Being grouped silicon through hole, often group includes several silicon through hole, successively detecting probe contact is often organized silicon
Through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and analyzes the most faulty silicon through hole in each group, and failure judgement
Test zone residing for silicon through hole；The group using two way classification silicon faulty to central area through hole detects again, traveling probe
Position carries out assignment test, the position of location fault silicon through hole, and exports fault type.The present invention can be with the little silicon of detection area
The failure condition of through hole, compared with existing built-in self-test circuit, saves technology difficulty and cost.On the other hand with probe by
Individual test silicon through hole is compared, and testing efficiency is greatly improved, and solve silicon through hole cannot be with visiting when area is the least simultaneously
The situation of pin detection.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Protect scope.
Claims (9)
1. one kind uses the method that two way classification carries out fault detect to silicon through hole, it is characterised in that include step:
Test zone is divided by A, distribution previously according to fault silicon through hole, and test zone is divided into central area, limit
Edge region and defective region；
B, being grouped all silicon through holes that need to detect, often group includes several silicon through hole, successively by detecting probe
Contact often group silicon through hole, detects impedance and the capacitive reactance characteristic of each group of silicon through hole, and analyzes the most faulty silicon through hole in each group, with
And test zone residing for failure judgement silicon through hole；
C, the group of employing two way classification silicon faulty to central area through hole detect again, and traveling probe position carries out location and surveys
Examination, the position of location fault silicon through hole, and export fault type.
The method that employing two way classification the most according to claim 1 carries out fault detect to silicon through hole, it is characterised in that described
Step A farther includes: divide test zone according to distribution function P (x) of fault silicon through hole:
Central area meets condition:
Marginal area meets condition:
Defective region meets condition:
Wherein, x is that in test zone, any point is to the distance at center, and r is the radius of detecting probe, and M is the fault set
The qualified threshold value of silicon number of openings.
The method that employing two way classification the most according to claim 1 carries out fault detect to silicon through hole, it is characterised in that described
Step A also includes:
A1, in advance statistics silicon through hole print are in the silicon number of through-holes of central area, marginal area, according to described silicon through hole print
Fault silicon through hole distribution function calculate the testing efficiency of fault silicon through hole, and when drawing testing efficiency maximum, probe once detects
The contact number of silicon through hole.
The method that employing two way classification the most according to claim 3 carries out fault detect to silicon through hole, it is characterised in that described
Step A1 farther includes:
Calculate at the testing time of central area fault silicon through hole by below equation:
And the testing time by below equation calculating edge region fault silicon through hole:
y2=N2/n+N2
And the testing time of total fault silicon through hole is calculated by below equation:
Above-mentioned formula is carried out derivation draw,
When from which further following that testing efficiency maximum, probe once detects the contact number of silicon through hole, for:
Wherein, y1 represents the testing time at central area fault silicon through hole, and y2 represents the survey of edge region fault silicon through hole
Examination number of times, Y represents the testing time of total fault silicon through hole, and N is silicon number of openings total on silicon through hole print, and area is S=
KN, K are constant, and n is the contact number of probe detection silicon through hole, the radius in region, N centered by R1Centered by the silicon through hole in region
Quantity, N2For the silicon number of openings of marginal area, and π R2=kN1, p (x) represents fault silicon through hole distribution function.
The method that employing two way classification the most according to claim 4 carries out fault detect to silicon through hole, it is characterised in that described
The contact number of probe detection silicon through hole is any one in 3 to 8.
The method that employing two way classification the most according to claim 1 carries out fault detect to silicon through hole, it is characterised in that described
The detailed process using two way classification again to detect the group of faulty silicon through hole in step C is:
When detecting the group of center area fault silicon through hole, traveling probe position carries out assignment test, makes to contact every time
The half of this group silicon number of through-holes that this group silicon number of through-holes once contacts before being, until finding out the position of fault silicon through hole.
The method that employing two way classification the most according to claim 1 carries out fault detect to silicon through hole, it is characterised in that described
Step C also includes:
When C1, group to edge area fault silicon through hole detect, traveling probe position carries out assignment test, makes to contact every time
This group silicon number of through-holes than front few one of this group silicon number of through-holes once contacted, until finding the position of fault silicon through hole.
8. one kind uses two way classification that silicon through hole is carried out the system of fault detect, it is characterised in that described system includes:
Pre-set module, for the distribution previously according to fault silicon through hole, test zone is divided, test zone is divided
Centered by region, marginal area and defective region；
Packet detection module, for being grouped all silicon through holes that need to detect, often group includes several silicon through hole, depends on
Secondary detecting probe contact often group silicon through hole is detected impedance and the capacitive reactance characteristic of each group of silicon through hole, and whether analyze in each group
Faulty silicon through hole, and test zone residing for failure judgement silicon through hole；
Fault silicon through hole locating module, for using the group of two way classification silicon faulty to central area through hole again to detect,
Traveling probe position carries out assignment test, the position of location fault silicon through hole, and exports fault type.
Employing two way classification the most according to claim 8 carries out the system of fault detect to silicon through hole, it is characterised in that described
When fault silicon through hole locating module is additionally operable to detect the group of edge area fault silicon through hole, traveling probe position carries out fixed
Bit test, make this group silicon number of through-holes every time contacted than front few one of this group silicon number of through-holes once contacted, until finding
The position of fault silicon through hole.
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| CN104750587B (en) * | 2013-12-31 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | The interactive method of testing and test device of encapsulating structure |
| CN109029225A (en) * | 2018-10-09 | 2018-12-18 | 信丰迅捷兴电路科技有限公司 | A kind of Microvia laser pore-forming quality periodic sensing approach |
| CN111007432B (en) * | 2019-12-12 | 2022-06-17 | 芜湖伦丰电子科技有限公司 | Method for searching open short circuit position of silver paste |
| CN113270335B (en) * | 2021-04-15 | 2022-11-11 | 深圳市国微电子有限公司 | TSV test method, TSV test system, TSV test equipment and storage medium |
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| CN102569260A (en) * | 2010-12-17 | 2012-07-11 | 海力士半导体有限公司 | Integrated circuit for detecting defects of through chip via |
| KR101186464B1 (en) * | 2011-04-13 | 2012-09-27 | 에스엔유 프리시젼 주식회사 | Interferometric system for measuring tsv and method using the same |
| CN102386169A (en) * | 2011-10-21 | 2012-03-21 | 华中科技大学 | Electromigration test structure of silicon through hole metal interconnection wire |
| CN102818765A (en) * | 2012-08-28 | 2012-12-12 | 北京工业大学 | Method for testing processing residual stress of 'through-silicon via'-Cu structure |
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Application publication date: 20130424 Assignee: Dongguan Shenglian Network Information Technology Co.,Ltd. Assignor: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES Contract record no.: X2023980039406 Denomination of invention: A Method and System for Fault Detection of Silicon Through Holes Using Dichotomy Granted publication date: 20161228 License type: Common License Record date: 20230810 |