CN103046029B - Based on the atomic layer deposition apparatus that the self-adaptive pressure of simulated annealing controls - Google Patents
Based on the atomic layer deposition apparatus that the self-adaptive pressure of simulated annealing controls Download PDFInfo
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- CN103046029B CN103046029B CN201110309981.4A CN201110309981A CN103046029B CN 103046029 B CN103046029 B CN 103046029B CN 201110309981 A CN201110309981 A CN 201110309981A CN 103046029 B CN103046029 B CN 103046029B
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Abstract
The invention discloses the atomic layer deposition apparatus that a kind of self-adaptive pressure based on simulated annealing controls, comprise deposition chambers, plasma gas produces system, radio-frequency power supply matching box, radio-frequency power supply, air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism.The atomic layer deposition apparatus that self-adaptive pressure based on simulated annealing provided by the invention controls, the adaptive control algorithm based on simulated annealing is adopted to control the chamber pressure of atomic layer deposition apparatus, make it to remain in the air pressure range of setting, and default atmospheric pressure value can be reached fast, atomic layer deposition apparatus not only can be made to enter rapidly stable working order, and the waste of chemical reagent can be reduced, improve practical efficiency, reduce remaining reagent to the pollution of gaseous reagent, reduce deposition reaction cycle time, homogeneity can be obtained, the film of good performance such as purity and gauge control.
Description
Technical field
The present invention relates to semi-conductor device technology field, particularly the atomic layer deposition apparatus that controls of a kind of self-adaptive pressure based on simulated annealing.
Background technology
In atomic layer deposition apparatus, pressure-controlling is a rather complicated problem always.All relate to the control problem of pressure at the links of deposition, before deposition starts, need to inflate deposition chambers, at work, air pressure often needs to remain on whole equipment deposition
torr arrives
in the scope of Torr, but in the chemical reagent step of reaction of deposition, the air pressure of deposition chambers can change, according to the difference of reactant, air pressure may become and also may diminish greatly, and the variable quantity of air pressure neither be changeless, the excessive or too small operating air pressure of chamber that all may cause of pressure variation is in
with
outside, the speed that substrate adsorbs presoma (or react with presoma) so just may be caused to change, within a short period of time, adsorb and can not reach capacity or the generation of the phenomenon such as surface reaction is incomplete.Air pressure is too low or too highly the reaction of chemical reagent all may be made insufficient, and then causes reagent waste and utilization ratio to reduce, and also can bring unfavorable for scale removal process, prolongation scale removal process, the deposition cycle reaction times is elongated, and quality product also can not be guaranteed.
Therefore, no matter air pressure is too high or too low, all possible unfavorable factor all can destroy ald from restricted, whole deposition process is all no longer desired by us, can only regard a kind of similar atomic layer deposition process as, its sedimentation rate may increase with the rising of air pressure and also may reduce.This will cause the uncontrollable of sedimentation rate, finally affects the performances such as the homogeneity of film, purity and gauge control.The above analysis, in atomic layer deposition apparatus working process, chamber pressure should be in certain scope that (namely operating air pressure belongs to
).
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of chamber pressure of atomic layer deposition apparatus that can make and remains in the air pressure range of setting, and the atomic layer deposition apparatus that the self-adaptive pressure based on simulated annealing that can reach default atmospheric pressure value fast controls.
For solving the problems of the technologies described above, the invention provides the atomic layer deposition apparatus that a kind of self-adaptive pressure based on simulated annealing controls, it comprises deposition chambers, plasma gas generation system, radio-frequency power supply matching box and radio-frequency power supply comprise air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism; Described air pressure acquisition circuit gathers the air pressure of described deposition chambers; Described simulated annealing pilot circuit receives the air pressure that described air pressure acquisition circuit gathers, and controls described inflation mechanism and inflates described deposition chambers, control described air extractor and bleed to described deposition chambers.
Further, described air extractor comprises electric current and voltage amplification module, rly., pump group controller, mechanical pump, molecular pump and manual modulation valve;
The output terminal of described electric current and voltage amplification module is connected with the input terminus of described deposition chambers by described rly., pump group controller, mechanical pump, molecular pump and manual modulation valve successively;
The input terminus of described electric current and voltage amplification module is connected with the output terminal of described simulated annealing pilot circuit.
Further, described inflation mechanism comprises two mass flow controllers, magnetic valve and manual modulation valves;
Wherein the input terminus of mass flow controller described in is connected with the output terminal of described simulated annealing pilot circuit, output terminal is connected with the input terminus of described deposition chambers by described magnetic valve and manual modulation valve successively, and output terminal is also connected with described air pressure acquisition circuit;
The input terminus of mass flow controller described in another is connected with the output terminal of described simulated annealing pilot circuit, and output terminal produces system by described magnetic valve and described plasma gas and is connected.
Further, described simulated annealing pilot circuit comprises computer and data processing module;
Described computer receives the air pressure of described air pressure acquisition circuit collection by described data processing module, judge whether the air pressure of described deposition chambers is in preset range, when described air pressure is lower than preset range, then controls described mass flow controller, magnetic valve and manual modulation valve and described deposition chambers is inflated;
When described air pressure is higher than preset range, then send open command by described data processing module, control described electric current and voltage amplification module output HIGH voltage, relay is connected, and then open the power supply of described pump group controller, start mechanical pump, molecular pump and open manual modulation valve and described deposition chambers is bled.
Further, described inflation mechanism also comprises inert gas source bottle, and the input terminus of described inert gas source bottle is connected with the output terminal of a described mass flow controller by a magnetic valve, and the output terminal of described inert gas source bottle is connected with manual magnetic valve.
Further, described atomic layer deposition apparatus also comprises temperature regulator, and described temperature regulator is connected between described deposition chambers and described data processing module.
The atomic layer deposition apparatus that self-adaptive pressure based on simulated annealing provided by the invention controls, the adaptive control algorithm based on simulated annealing is adopted to control the chamber pressure of atomic layer deposition apparatus, make it to remain in the air pressure range of setting, and default atmospheric pressure value can be reached fast, atomic layer deposition apparatus not only can be made to enter rapidly stable working order, and the waste of chemical reagent can be reduced, improve practical efficiency, reduce remaining reagent to the pollution of gaseous reagent, reduce deposition reaction cycle time, homogeneity can be obtained, the film of good performance such as purity and gauge control.
Accompanying drawing explanation
The principle schematic of the pneumatic control circuits that Fig. 1 provides for the embodiment of the present invention.
The PID Controlling model figure based on simulated annealing that Fig. 2 provides for the embodiment of the present invention.
The schema of the control air pressure based on simulated annealing that Fig. 3 provides for the embodiment of the present invention.
The structural representation of the atomic layer deposition apparatus that the self-adaptive pressure based on simulated annealing that Fig. 4 provides for the embodiment of the present invention controls.
Wherein, 1-mass flow controller, 2-magnetic valve, 8-inert gas source bottle, 10-manual modulation valve, 12-radio-frequency power supply, 13-radio-frequency power supply matching box, 14-plasma production system, 15-deposition chambers, 16-molecular pump, 17-mechanical pump, 18-pump group controller, 20-temperature regulator, 21-computer, 22-data processing module, 23-pressure transmitter, 24-rly., 25-electric current and voltage amplification module, 26-gas.
Embodiment
The present invention is the air pressure control texture based on simulated annealing, this structure is mainly used in measuring the air pressure in deposition chambers, make it to reach the air pressure required for deposition work fast, and control within the scope of the operating air pressure preset, atomic layer deposition apparatus is made to be operated in suitable air pressure, the disadvantageous effect brought when avoiding air pressure too high or too low, causes the uncontrollable of the performances such as the homogeneity of film, purity, the product that production performance is bad.Thus the present invention is directed to the adverse consequences that air pressure is not suitable for bringing deposition effect, adopt the pid control algorithm based on simulated annealing, effectively air pressure can be remained on the scope of setting.
The atomic layer deposition apparatus of a kind of adaptive barometric pressure control algolithm based on simulated annealing provided by the invention, the schematic circuit of this algorithm realization as shown in Figure 1.Controller based on simulated annealing is made up of two portions: one be classical PID controller (mathematical model of PID method control law is:
), for directly carrying out closed-loop control to controlled plant, and parameter (
,
,
) on-line tuning; Two is simulated annealing (SAA) parts, according to the running status of system, by self-adaptation and the weighting coefficient adjustment of simulated annealing, thus pid regulator parameters, make the pid parameter in system dynamic course each stage be in optimum regime, to obtain satisfied control effects.The PID Controlling model of application simulation annealing as described in Figure 2.
The application form of this simulated annealing is: from selected initial solution, by means of controling parameters
produce in a series of Markov chain when increasing progressively, utilize a new explanation generation device and acceptance criterion, repeat to comprise " generation new explanation-calculating target function-judge whether to accept new explanation-acceptance (or giving up) new explanation " this four-stage, constantly iteration is carried out to current solution, thus reaching the implementation of objective function optimum, schema is as described in Figure 3.
In Controlling System implementation process, first compare with the value preset again after needing the pneumatic parameter controlled to convert certain signal to by sensor, after calculating, corresponding controlling valu is obtained comparing the difference signal obtained, give Controlling System by manipulated variable to control accordingly, if air pressure is too low, pass into a certain amount of rare gas element, if air pressure is too high, need to extract a part of gas, make the air pressure of whole chamber be in the state of running balance.In deposition process, constantly carry out above-mentioned work, thus reach the object automatically regulated.
Be described in detail below in conjunction with the atomic layer deposition apparatus of a specific embodiment to the adaptive barometric pressure control algolithm based on simulated annealing provided by the invention.
As shown in Figure 4, the atomic layer deposition apparatus based on the adaptive barometric pressure control algolithm of simulated annealing comprises deposition chambers 15, plasma gas produces system 14, radio-frequency power supply matching box 13, radio-frequency power supply 12, temperature regulator 20, air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism.Wherein, air pressure acquisition circuit comprises non-Shi Chu ﹚ in pressure transmitter 23 and analog to digital conversion electricity Lu ﹙ Tu.Pressure transmitter 23 gathers the air pressure of deposition chambers 15.The air pressure of collection is carried out analog to digital conversion by analog to digital conversion circuit.Simulated annealing pilot circuit comprises computer 21 and data processing module 22.Data processing module 22 receives the air pressure signal through analog to digital conversion circuit conversion, and sends this signal to computer 21 and process.Data processing module 22 receive temperature regulator 20 from deposition chambers 15 collect temperature signal, control deposition chambers 15 carry out heating or dispelling the heat, make its temperature remain on the scope that depositing device is normally worked.Air extractor comprises electric current and voltage amplification module 25, rly. 24, pump group controller 18, mechanical pump 17, molecular pump 16 and manual modulation valve 10.The output terminal of electric current and voltage amplification module 25 is connected with the input terminus of deposition chambers 15 by rly. 24, pump group controller 18, mechanical pump 17, molecular pump 16 and manual modulation valve 10 successively.Inflation mechanism comprises two mass flow controllers 1, magnetic valve 2 and manual modulation valve 10.Wherein, the input terminus of a mass flow controller 1 is connected with the output terminal of data processing module 22, and output terminal is connected with the input terminus of deposition chambers by magnetic valve 2 and manual modulation valve 10 successively, and output terminal is also connected with pressure transmitter 23.The input terminus of another mass flow controller 1 is connected with the output terminal of data processing module 22, and output terminal produces system 14 by magnetic valve 2 and plasma gas and is connected.
Computer 21 judges whether the air pressure of deposition chambers 15 is in preset range, and when air pressure is lower than preset range, then gas 26 is sent into deposition chambers 15 by Mass Control flow director 1, magnetic valve 2 and manual modulation valve 10.When deposition chambers 15 reaches required operating pressure, close mass flow controller 1 and manual modulation valve 10, stop inflation.When air pressure is higher than preset range, then send open command by data processing module 22, control voltage Current amplifier module 25 output HIGH voltage, relay 24 is connected, and then open the power supply of pump group controller 18, start mechanical pump 17, molecular pump 16 and manual modulation valve 10 pairs of deposition chambers 15 to bleed, take out base vacuum.
After deposition terminates, in n the cycle of computer control whole equipment dry running, purging purification is carried out, so inflation mechanism also comprises inert gas source bottle 8 to atomic layer deposition apparatus valve.The input terminus of inert gas source bottle 8 is connected with the output terminal of a mass flow controller 1 by a magnetic valve 2, and the output terminal of inert gas source bottle 8 is connected with manual magnetic valve 10.The number of inert gas source bottle 8 can be two, and is provided with magnetic valve 2 separately.Computer 21 is by data processing module 22 sending controling instruction, and the magnetic valve 2 controlled on inert gas source bottle 8 is opened, thus opens inert gas source bottle 8, purifies reaction chamber 15.
In addition, computer 21 arranges the parameter required for deposition work, the order of parameter access control is sent in the receiving-member of radio-frequency power supply 12 by computer 21, control the unlatching of radio-frequency power supply 12 and the setting to output rating, the output rating of radio-frequency power supply 12 is fed back to computer 21 as the quantities received of data processing module 22, computer is analyzed this power, is operated in stable state to make plasma production system.
The present invention is used for atomic layer deposition apparatus, when carrying out ald, under can guaranteeing that atomic layer deposition apparatus is operated in suitable air pressure, and air pressure needed for equipment can be reached fast, and then reduce the working hour, and due under being operated in normal barometric pressure, chemical reagent just can fully be reacted and be used, reduce reagent waste tail gas pollution, improve equipment deposition properties, obtain the high-quality product of the fabulous and very high purity of homogeneity.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to example to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (1)
1., based on the atomic layer deposition apparatus that the self-adaptive pressure of simulated annealing controls, comprise deposition chambers, plasma gas produce system, radio-frequency power supply matching box and radio-frequency power supply, it is characterized in that, also comprise:
Air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism;
Described air pressure acquisition circuit gathers the air pressure of described deposition chambers;
Described simulated annealing pilot circuit receives the air pressure that described air pressure acquisition circuit gathers, and controls described inflation mechanism and inflates described deposition chambers, control described air extractor and bleed to described deposition chambers;
Wherein, described air extractor comprises:
Electric current and voltage amplification module, rly., pump group controller, mechanical pump, molecular pump and manual modulation valve;
The output terminal of described electric current and voltage amplification module is connected with the input terminus of described deposition chambers by described rly., pump group controller, mechanical pump, molecular pump and manual modulation valve successively;
The input terminus of described electric current and voltage amplification module is connected with the output terminal of described simulated annealing pilot circuit;
Wherein, described inflation mechanism comprises:
Two mass flow controllers, magnetic valve and manual modulation valves;
Wherein the input terminus of mass flow controller described in is connected with the output terminal of described simulated annealing pilot circuit, output terminal is connected with the input terminus of described deposition chambers by described magnetic valve and manual modulation valve successively, and output terminal is also connected with described air pressure acquisition circuit;
The input terminus of mass flow controller described in another is connected with the output terminal of described simulated annealing pilot circuit, and output terminal produces system by described magnetic valve and described plasma gas and is connected;
Wherein, described simulated annealing pilot circuit comprises:
Computer and data processing module;
Described computer receives the air pressure of described air pressure acquisition circuit collection by described data processing module, judge whether the air pressure of described deposition chambers is in preset range, when described air pressure is lower than preset range, then controls described mass flow controller, magnetic valve and manual modulation valve and described deposition chambers is inflated;
When described air pressure is higher than preset range, then send open command by described data processing module, control described electric current and voltage amplification module output HIGH voltage, relay is connected, and then open the power supply of described pump group controller, start mechanical pump, molecular pump and open manual modulation valve and described deposition chambers is bled;
Wherein, described inflation mechanism also comprises:
Inert gas source bottle, the input terminus of described inert gas source bottle is connected with the output terminal of a described mass flow controller by a magnetic valve, and the output terminal of described inert gas source bottle is connected with manual modulation valve;
Wherein, described atomic layer deposition apparatus also comprises:
Temperature regulator, described temperature regulator is connected between described deposition chambers and described data processing module.
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| CN100523291C (en) * | 2004-08-06 | 2009-08-05 | 东京毅力科创株式会社 | Thin film forming method and thin film forming apparatus |
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| JPS62238381A (en) * | 1986-04-08 | 1987-10-19 | Kokusai Electric Co Ltd | Device for controlling pressure in vacuum chamber |
| JP2004510221A (en) * | 2000-06-14 | 2004-04-02 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for maintaining pressure in a controlled environment chamber |
| US7435454B2 (en) * | 2005-03-21 | 2008-10-14 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
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| CN100523291C (en) * | 2004-08-06 | 2009-08-05 | 东京毅力科创株式会社 | Thin film forming method and thin film forming apparatus |
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