CN103046029A - Atomic layer deposition equipment for self-adaptive pressure control based on simulated annealing algorithm - Google Patents
Atomic layer deposition equipment for self-adaptive pressure control based on simulated annealing algorithm Download PDFInfo
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- CN103046029A CN103046029A CN2011103099814A CN201110309981A CN103046029A CN 103046029 A CN103046029 A CN 103046029A CN 2011103099814 A CN2011103099814 A CN 2011103099814A CN 201110309981 A CN201110309981 A CN 201110309981A CN 103046029 A CN103046029 A CN 103046029A
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Abstract
The invention discloses atomic layer deposition equipment for self-adaptive pressure control based on a simulated annealing algorithm. The atomic layer deposition equipment comprises a deposition chamber, a plasma gas generating system, a radio-frequency power supply matcher, a radio-frequency power supply, a gas pressure acquisition circuit, a simulated annealing control circuit, a gas extractor and a gas filling device. According to the atomic layer deposition equipment for self-adaptive pressure control based on the simulated annealing algorithm, disclosed by the invention, the gas pressure of the chamber of the atomic layer deposition equipment is controlled by adopting a self-adaptive control algorithm based on the simulated annealing algorithm, so that the gas pressure is kept in a set gas pressure range, and a preset gas pressure value can be rapidly achieved, therefore, not only can the atomic layer deposition equipment rapidly enter a stable working state, but also the waste of a chemical reagent can be reduced, the actual utilization rate is increased, the pollution of residual reagent on the gas reagent is reduced, the deposition reaction cycle time is shortened, and a film which has favorable performances, such as evenness, purity and thickness control can be obtained.
Description
Technical field
The present invention relates to semi-conductor device technology field, particularly a kind of atomic layer deposition apparatus of controlling based on the self-adaptive pressure of simulated annealing.
Background technology
In the atomic layer deposition apparatus, pressure-controlling is a rather complicated problem always.Links in deposition all relates to the control problem of pressure, before the deposition beginning, need to inflate deposition chambers, whole equipment deposition at work, air pressure often need to remain on
Torr arrives
In the scope of Torr, but the chemical reagent step of reaction in deposition, the air pressure of deposition chambers can change, difference according to reactant, air pressure may become greatly also and may diminish, and the variable quantity of air pressure neither be changeless, and the excessive or too small operating air pressure of chamber that all may cause of pressure variation is in
With
Outside, so just may cause the speed of substrate absorption presoma (or with presoma reaction) to change, within a short period of time, the generation of the phenomenon such as absorption can not reach capacity or surface reaction is incomplete.Air pressure is crossed and low or too highly all may be made the reaction of chemical reagent insufficient, and then causes reagent waste and utilization ratio to reduce, and also can bring unfavorablely for scale removal process, prolongs scale removal process, and the deposition cycle reaction times is elongated, and quality product also can not be guaranteed.
Therefore, no matter air pressure is too high still excessively low, all possible unfavorable factor all can destroy ald from restricted, whole deposition process all no longer is that we are desired, can only regard a kind of similar atomic layer deposition process as, its sedimentation rate may increase also and may reduce with the rising of air pressure.This will cause the uncontrollable of sedimentation rate, finally affect the performances such as homogeneity, purity and gauge control of film.The above analysis, in the atomic layer deposition apparatus working process, it (is that operating air pressure belongs to that chamber pressure should be in certain scope
).
Summary of the invention
Technical problem to be solved by this invention provides a kind of chamber pressure of atomic layer deposition apparatus that can make and remains in the air pressure range of setting, and can reach fast the atomic layer deposition apparatus based on the self-adaptive pressure control of simulated annealing of default atmospheric pressure value.
For solving the problems of the technologies described above, the invention provides a kind of atomic layer deposition apparatus of controlling based on the self-adaptive pressure of simulated annealing, it comprises that deposition chambers, plasma gas produce system, radio-frequency power supply matching box and radio-frequency power supply and comprise air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism; Described air pressure acquisition circuit gathers the air pressure of described deposition chambers; Described simulated annealing pilot circuit receives the air pressure that described air pressure acquisition circuit gathers, and controls described inflation mechanism described deposition chambers is inflated, and controls described air extractor described deposition chambers is bled.
Further, described air extractor comprises electric current and voltage amplification module, rly., pump group controller, mechanical pump, molecular pump and manual modulation valve;
The output terminal of described electric current and voltage amplification module is connected with the input terminus of described deposition chambers by described rly., pump group controller, mechanical pump, molecular pump and manual modulation valve successively;
The input terminus of described electric current and voltage amplification module is connected with the output terminal of described simulated annealing pilot circuit.
Further, described inflation mechanism comprises two mass flow controllers, magnetic valve and manual modulation valves;
Wherein the input terminus of a described mass flow controller is connected with the output terminal of described simulated annealing pilot circuit, output terminal is connected with the input terminus of described deposition chambers by described magnetic valve and manual modulation valve successively, and output terminal also is connected with described air pressure acquisition circuit;
The input terminus of another described mass flow controller is connected with the output terminal of described simulated annealing pilot circuit, and output terminal is connected with described plasma gas generation system by described magnetic valve.
Further, described simulated annealing pilot circuit comprises computer and data processing module;
Described computer receives the air pressure that described air pressure acquisition circuit gathers by described data processing module, whether the air pressure of judging described deposition chambers is in preset range, when described air pressure is lower than preset range, then controls described mass flow controller, magnetic valve and manual modulation valve described deposition chambers is inflated;
When described air pressure is higher than preset range, then send open command by described data processing module, control described electric current and voltage amplification module output HIGH voltage, relay is connected, and then open the power supply of described pump group controller, start mechanical pump, molecular pump and open manual modulation valve described deposition chambers is bled.
Further, described inflation mechanism also comprises the inert gas source bottle, and the input terminus of described inert gas source bottle is connected with the output terminal of a described mass flow controller by a magnetic valve, and the output terminal of described inert gas source bottle is connected with manual magnetic valve.
Further, described atomic layer deposition apparatus also comprises temperature regulator, and described temperature regulator is connected between described deposition chambers and the described data processing module.
The atomic layer deposition apparatus of controlling based on the self-adaptive pressure of simulated annealing provided by the invention, employing is based on the chamber pressure of the adaptive control algorithm control atomic layer deposition apparatus of simulated annealing, make it to remain in the air pressure range of setting, and can reach fast default atmospheric pressure value, not only can make atomic layer deposition apparatus enter rapidly stable working order, and can reduce the waste of chemical reagent, improve practical efficiency, reduce residual reagent to the pollution of gaseous reagent, reduce deposition reaction cycle time, can access homogeneity, the well behaved film such as purity and gauge control.
Description of drawings
The principle schematic of the air pressure pilot circuit that Fig. 1 provides for the embodiment of the invention.
The PID control model diagram based on simulated annealing that Fig. 2 provides for the embodiment of the invention.
The schema based on the control air pressure of simulated annealing that Fig. 3 provides for the embodiment of the invention.
The structural representation based on the atomic layer deposition apparatus of the self-adaptive pressure of simulated annealing control that Fig. 4 provides for the embodiment of the invention.
Wherein, 1-mass flow controller, 2-magnetic valve, 8-inert gas source bottle, 10-manual modulation valve, 12-radio-frequency power supply, 13-radio-frequency power supply matching box, 14-plasma generation system, 15-deposition chambers, 16-molecular pump, 17-mechanical pump, 18-pump group controller, 20-temperature regulator, 21-computer, 22-data processing module, 23-pressure transmitter, 24-rly., 25-electric current and voltage amplification module, 26-gas.
Embodiment
The present invention is the air pressure control texture based on simulated annealing, this structure is mainly used in measuring the air pressure in the deposition chambers, make it to reach fast the needed air pressure of deposition work, and be controlled in the default operating air pressure scope, make atomic layer deposition apparatus be operated in suitable air pressure, the disadvantageous effect of bringing when avoiding air pressure too high or too low, the performance such as homogeneity, purity uncontrollable that causes film, the product that production performance is bad.Thereby the present invention is directed to air pressure and be not suitable for adverse consequences that deposition effect is brought, adopt the pid control algorithm based on simulated annealing, can effectively air pressure be remained on the scope of setting.
The atomic layer deposition apparatus of a kind of adaptive barometric pressure control algolithm based on simulated annealing provided by the invention, the schematic circuit that this algorithm is realized as shown in Figure 1.Controller based on simulated annealing is comprised of two portions: the one, classical PID controller (mathematical model of PID method control law is:
), be used for directly controlled plant being carried out closed-loop control, and parameter (
,
,
) on-line tuning; The 2nd, simulated annealing (SAA) part, according to the running status of system, by self-adaptation and the weighting coefficient adjustment of simulated annealing, thereby pid regulator parameters makes the pid parameter in each stage of system dynamic course be in optimum regime, to obtain satisfied control effect.The PID control model of application simulation annealing as described in Figure 2.
The application form of this simulated annealing is: from selected initial solution, by means of the control parameter
Produce when increasing progressively in a series of Markov chains, utilize a new explanation generation device and acceptance criterion, repeat to comprise " produce new explanation-calculating target function-judge whether to accept new explanation-acceptance (or giving up) new explanation " this four-stage, constantly current solution is carried out iteration, thereby reach the implementation of objective function optimum, schema as described in Figure 3.
In the Controlling System implementation process, after converting certain signal to by sensor, the pneumatic parameter that at first will need to control compares with predefined value again, the difference signal that relatively obtains is obtained corresponding controlling valu after calculating, giving Controlling System with manipulated variable controls accordingly, if air pressure is crossed low then is passed into a certain amount of rare gas element, if air pressure too high then needs extracted a part of gas, make the air pressure of whole chamber be in the state of running balance.In the deposition process, constantly carry out above-mentioned work, thereby reach the purpose of automatic adjusting.
Be elaborated below in conjunction with the atomic layer deposition apparatus of a specific embodiment to the adaptive barometric pressure control algolithm based on simulated annealing provided by the invention.
As shown in Figure 4, the atomic layer deposition apparatus based on the adaptive barometric pressure control algolithm of simulated annealing comprises that deposition chambers 15, plasma gas produce system 14, radio-frequency power supply matching box 13, radio-frequency power supply 12, temperature regulator 20, air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism.Wherein, the air pressure acquisition circuit comprises Wei Shi Chu ﹚ among pressure transmitter 23 and the analog to digital conversion Dian Lu ﹙ Tu.Pressure transmitter 23 gathers the air pressure of deposition chambers 15.Analog to digital conversion circuit carries out analog to digital conversion with the air pressure that gathers.The simulated annealing pilot circuit comprises computer 21 and data processing module 22.Data processing module 22 receives the air pressure signal through the analog to digital conversion circuits conversion, and sends this signal to computer 21 and process.Data processing module 22 receives temperature regulators 20 from deposition chambers 15 temperature signal that collects, and control deposition chambers 15 heats or dispel the heat, the scope that its temperature is remained on depositing device is worked.Air extractor comprises electric current and voltage amplification module 25, rly. 24, pump group controller 18, mechanical pump 17, molecular pump 16 and manual modulation valve 10.The output terminal of electric current and voltage amplification module 25 is connected with the input terminus of deposition chambers 15 by rly. 24, pump group controller 18, mechanical pump 17, molecular pump 16 and manual modulation valve 10 successively.Inflation mechanism comprises two mass flow controllers 1, magnetic valve 2 and manual modulation valve 10.Wherein, the input terminus of a mass flow controller 1 is connected with the output terminal of data processing module 22, and output terminal is connected with the input terminus of deposition chambers by magnetic valve 2 and manual modulation valve 10 successively, and output terminal also is connected with pressure transmitter 23.The input terminus of another mass flow controller 1 is connected with the output terminal of data processing module 22, and output terminal produces system 14 by magnetic valve 2 and plasma gas and is connected.
Deposition in n cycle of the whole equipment dry running of computer control, purges purification to the atomic layer deposition apparatus valve, so inflation mechanism also comprises inert gas source bottle 8 after finishing.The input terminus of inert gas source bottle 8 is connected with the output terminal of a mass flow controller 1 by a magnetic valve 2, and the output terminal of inert gas source bottle 8 is connected with manual magnetic valve 10.The number of inert gas source bottle 8 can be two, and is provided with separately magnetic valve 2.Computer 21 is by data processing module 22 sending controling instructions, and the magnetic valve 2 on the control inert gas source bottle 8 is opened, thereby opens inert gas source bottle 8, and reaction chamber 15 is purified.
In addition, computer 21 arranges the needed parameter of deposition work, computer 21 sends to the order of parameter access control in the receiving-member of radio-frequency power supply 12, the unlatching of control radio-frequency power supply 12 and to the setting of output rating, the output rating of radio-frequency power supply 12 is fed to computer 21 as the quantities received of data processing module 22, computer is analyzed this power, so that the plasma generation system works is at stable state.
The present invention is used for atomic layer deposition apparatus, when carrying out ald, can guarantee that atomic layer deposition apparatus is operated under the suitable air pressure, and can reach fast the required air pressure of equipment, and then reduce the working hour, and owing to be operated under the normal barometric pressure, chemical reagent just can access abundant reaction and use, reduce the reagent waste tail gas pollution, improve the equipment deposition properties, obtain the high-quality product of the fabulous and based on very high purity of homogeneity.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although with reference to example the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not breaking away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (6)
1. the atomic layer deposition apparatus based on the self-adaptive pressure control of simulated annealing comprises that deposition chambers, plasma gas produce system, radio-frequency power supply matching box and radio-frequency power supply, it is characterized in that, also comprises:
Air pressure acquisition circuit, simulated annealing pilot circuit, air extractor and inflation mechanism;
Described air pressure acquisition circuit gathers the air pressure of described deposition chambers;
Described simulated annealing pilot circuit receives the air pressure that described air pressure acquisition circuit gathers, and controls described inflation mechanism described deposition chambers is inflated, and controls described air extractor described deposition chambers is bled.
2. atomic layer deposition apparatus according to claim 1 is characterized in that, described air extractor comprises:
Electric current and voltage amplification module, rly., pump group controller, mechanical pump, molecular pump and manual modulation valve;
The output terminal of described electric current and voltage amplification module is connected with the input terminus of described deposition chambers by described rly., pump group controller, mechanical pump, molecular pump and manual modulation valve successively;
The input terminus of described electric current and voltage amplification module is connected with the output terminal of described simulated annealing pilot circuit.
3. atomic layer deposition apparatus according to claim 3 is characterized in that, described inflation mechanism comprises:
Two mass flow controllers, magnetic valve and manual modulation valves;
Wherein the input terminus of a described mass flow controller is connected with the output terminal of described simulated annealing pilot circuit, output terminal is connected with the input terminus of described deposition chambers by described magnetic valve and manual modulation valve successively, and output terminal also is connected with described air pressure acquisition circuit;
The input terminus of another described mass flow controller is connected with the output terminal of described simulated annealing pilot circuit, and output terminal is connected with described plasma gas generation system by described magnetic valve.
4. atomic layer deposition apparatus according to claim 3 is characterized in that, described simulated annealing pilot circuit comprises:
Computer and data processing module;
Described computer receives the air pressure that described air pressure acquisition circuit gathers by described data processing module, whether the air pressure of judging described deposition chambers is in preset range, when described air pressure is lower than preset range, then controls described mass flow controller, magnetic valve and manual modulation valve described deposition chambers is inflated;
When described air pressure is higher than preset range, then send open command by described data processing module, control described electric current and voltage amplification module output HIGH voltage, relay is connected, and then open the power supply of described pump group controller, start mechanical pump, molecular pump and open manual modulation valve described deposition chambers is bled.
5. according to claim 3 or 4 described atomic layer deposition apparatus, it is characterized in that described inflation mechanism also comprises:
The inert gas source bottle, the input terminus of described inert gas source bottle is connected with the output terminal of a described mass flow controller by a magnetic valve, and the output terminal of described inert gas source bottle is connected with manual magnetic valve.
6. atomic layer deposition apparatus according to claim 4 is characterized in that, described atomic layer deposition apparatus also comprises:
Temperature regulator, described temperature regulator are connected between described deposition chambers and the described data processing module.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238381A (en) * | 1986-04-08 | 1987-10-19 | Kokusai Electric Co Ltd | Device for controlling pressure in vacuum chamber |
| US20030209322A1 (en) * | 2000-06-14 | 2003-11-13 | Kenneth Pfeiffer | Methods and apparatus for maintaining a pressure within an environmentally controlled chamber |
| US20060210713A1 (en) * | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
| CN100523291C (en) * | 2004-08-06 | 2009-08-05 | 东京毅力科创株式会社 | Thin film forming method and thin film forming apparatus |
-
2011
- 2011-10-13 CN CN201110309981.4A patent/CN103046029B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238381A (en) * | 1986-04-08 | 1987-10-19 | Kokusai Electric Co Ltd | Device for controlling pressure in vacuum chamber |
| US20030209322A1 (en) * | 2000-06-14 | 2003-11-13 | Kenneth Pfeiffer | Methods and apparatus for maintaining a pressure within an environmentally controlled chamber |
| CN100523291C (en) * | 2004-08-06 | 2009-08-05 | 东京毅力科创株式会社 | Thin film forming method and thin film forming apparatus |
| US20060210713A1 (en) * | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
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