CN103043599A - Preparation method of flexible polymer substrate-based spiral inductor - Google Patents
Preparation method of flexible polymer substrate-based spiral inductor Download PDFInfo
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Abstract
The invention relates to a preparation method of a flexible polymer substrate-based spiral inductor. The preparation method comprises the following steps of: (A) growing a flexible film on a substrate; for optional (A1), sputtering a seed layer on the film, electroplating a magnetic material, and growing the flexible film; for optional (A2), sputtering the seed layer; (B) electroplating a coil; (C) electroplating a magnetic core; for optional (C1), removing a photoresist and the seed layer; (D) growing the flexible film; for optional (D1), sputtering the seed layer on the film, electroplating the magnetic material, and growing the flexible film; (E) stripping an inductor to obtain a flexible polymer substrate-based spiral inductor with a sandwich structure. The micro spiral inductor with the sandwich structure obtained by electroplating a copper coil and an iron-nickel magnetic core on the flexible substrate has a high L value and a high Q value and a small area, and is foldable, good in biocompatibility, simple in process and low in cost. The prepared inductor can be widely applied to various biological and abiological microsystems, and is in particular used for an embedded wireless energy transmission system.
Description
Technical field
The present invention relates to the micro-nano manufacture field, particularly a kind of preparation method of the spiral inductance based on flexible polymer substrate.
Background technology
Parylene (Parylene) is a kind of thermoplasticity crystalline polymer.Compare with other polymer, the Parylene film has that shape-retaining ability is good, and chemical inertness is strong, can not dissolve under the normal temperature, bio-compatibility is fabulous, film thickness is little, and is transparent, and cost is low, nontoxic, the characteristics such as pollution-free, therefore in the MEMS field, particularly fluid channel and Bio-MEMS can play a significant role in using.
Flexibility is one of Parylene build-in attribute, brings into play significant role with Parylene as the device of flexible substrate in the fields such as biologic medical, is the study hotspot of micro-nano manufacture field in recent years.The structure of known Parylene has kind more than 20, but can in little processing, use only have three kinds, i.e. Parylene N, Parylene C and Parylene D, wherein ParyleneC is a kind of structure that generally adopts.
Except Parylene, the flexible polymers such as polyimides (PI), dimethyl silicone polymer (PDMS) also have the similar character with Parylene, therefore also can be used for the preparation of inductance of the present invention.
In integrated circuit or micro-system, add inductance element and be regarded as challenge always, because existing inductance generally all needs to occupy very large area and guarantees high L value and high Q value, this not only can bring very large loss, and so that tries hard to realize that the target of small-scale integrated circuit chip becomes difficult to achieve.Utilize the method for electro-coppering can effectively reduce the impedance of coil, thereby improve the performance of inductance.Center at inductance coil adds the performance that the magnetic core (such as iron-nickel alloy, cobalt nickel manganese phosphorus alloy, ferro-cobalt etc.) of being made by soft magnetic materials can effectively promote inductance.According to research before, Xuming Sun for example, (IEEE-NEMS 2012 for the Design andFabrication of Flexible Parylene-based Inductors withElectroplated NiFe Magnetic Core for Wireless PowerTransmission System that the people such as Yang Zheng delivered in 2012, p.238-242) (Chinese exercise question: the Design ﹠ preparation with the inductance of the flexible Parylene substrate of iron nickel magnetic core that is used for wireless energy transfer system), do not compare with the inductance of magnetic core, the center is more superior with the performance of the inductance of magnetic core.Therefore, soft magnetic materials can improve the performance of inductance.But existing MEMS inductance is owing to the reason such as simple in structure, that the magnetic core area is limited, and performance is still waiting further raising.
In addition, in the biologic medical field, the device of a lot of implant into body need to guarantee its bio-compatibility and flexibility.Because built-in type device environment of living in is abominable, to guarantee on the one hand device not can with human body in material react and cause human body to be polluted or device failure, so device will have good bio-compatibility; On the other hand, deformation even bending fold might occur in built-in type device when physical activity, so this device also must guarantee to have good flexibility.Parylene is as the extremely strong macromolecule polymer material of a kind of inertia, and its bio-compatibility is fabulous, and itself has flexibility, is the tectal excellent material as built-in type device.
From above introduction as can be known, soft magnetic materials can improve the performance of inductance, and flexible polymer can provide flexible and good bio-compatibility, therefore demands research and realization urgently based on the more high performance inductance of these materials.
Summary of the invention
The application's purpose is to propose a kind of spiral inductance preparation method based on flexible substrate (such as Parylene), utilize electro-plating method at Parylene superficial growth wire coil, and in hub of a spool, bottom and the top plating magnetic core Q value with the raising inductance, thereby realize high performance MEMS inductance.
The application discloses a kind of preparation method of the spiral inductance based on flexible polymer substrate, comprises the steps: in order
(A) Grown fexible film;
(A1) that chooses wantonly sputtering seed layer on film is electroplated magnetic material, the growth fexible film;
(A2) sputtering seed layer of choosing wantonly;
(B) electroplate coil;
(C) electroplate magnetic core;
Optional step (C1) is removed photoresist and is removed Seed Layer;
(D) growth fexible film;
(D1) that chooses wantonly sputtering seed layer on film is electroplated magnetic material, the growth fexible film;
(E) peel off inductance, obtain the sandwich structure spiral inductance of flexible polymer substrate.
Further:
Step (A) substrate is silicon substrate, and fexible film is Parylene, polyimides or dimethyl silicone polymer film;
Step (B) is electroplated coil and is comprised thick resist lithography, makes coil pattern, the electro-coppering coil; Photoresist is AZ9260, AZ4620, and the thickness of whirl coating is 10-15um;
Step (C) is electroplated magnetic core and is comprised thick resist lithography, makes the magnetic core position, electroplates magnetic core;
The fexible film of deposition is Parylene, polyimides or dimethyl silicone polymer film in the step (D);
Step (E) is peeled off as directly peeling off by hand.
Further:
Step (A) flexible material film thickness is 8-15um;
The described Seed Layer of step (A1) is Ti/Cu, and the thickness of Ti is 10-30nm, and the thickness of Cu is 100-300nm, first deposit Ti, again deposit Cu; The plating magnetic material is iron-nickel alloy, ferro-cobalt; Electroplating time is 90-120 minute, electroplates density 2-4ASD; Fexible film thickness is 8-15um;
Step (A2) Seed Layer is Ti/Cu, and the thickness of Ti is 10-30nm, and the thickness of Cu is 100-300nm, first deposit Ti, again deposit Cu;
The described electroplating time of step (B) is 50-70 minute, and the current density during plating is 1ASD;
The described magnetic core of step (C) is iron-nickel alloy, ferro-cobalt, cobalt nickel manganese phosphorus alloy, when adopting iron-nickel alloy in the electroplate liquid ratio of iron and nickel be 20:80,30:70 or 40:60; Electroplating time is 90-120 minute, and the current density during plating is 2-4ASD;
Step (C1) is that wet etching removes photoresist and remove Seed Layer, and process is put into organic solvent with sample and finished, and goes the process of Seed Layer to adopt the method for wet etching; If Seed Layer is Ti and Cu, then method is first sample to be put into copper corrosion liquid, sample is put into the titanium corrosive liquid with clean rear taking-up of titanium corrosion after copper corrosion is clean again, and is rinsed well with deionized water;
Step (D) flexible material film thickness is 8-15um;
Step (D1) Seed Layer is Ti/Cu, and the thickness of Ti is 10-30nm, and the thickness of Cu is 100-300nm, first deposit Ti, again deposit Cu; The plating magnetic material is iron-nickel alloy, ferro-cobalt; Electroplating time is 90-120 minute, electroplates density 2-4ASD; Fexible film thickness is 8-15um.
Further:
Film thickness is 10um in the step (A), and film is parylene film;
The thickness of Ti is 15nm in the step (A1), and the thickness of Cu is 150nm;
Photoresist thickness is 10um in the step (B);
Step (C) electroplating iron-nickel magnetic core, the solution composition of use mainly contains nickelous sulfate, nickel chloride, ferrous sulfate, and the plating pulse is 4ASD, and electroplating time is 100min;
Acetone removes photoresist in the step (C1), and copper corrosion liquid main component is glacial acetic acid and hydrogen peroxide, and the corrosion Cu time is 60s-70s, and the titanium corrosive liquid is hydrofluoric acid, and the time is 40s-60s;
The thick parylene film of step (D) growth 10um.
The application also discloses a kind of spiral inductance based on flexible polymer substrate, and it adopts the said method preparation.
Further be optional possess top thin magnetic film and/or the optional inductance that possesses the bottom magnetic film.
The spiral inductance of sandwich structure preferably.
The purposes of above-mentioned spiral inductance is characterized in that: be used for various biologies and abiotic micro-system, be preferred for the wireless energy transfer system of implanted.
The sandwich structure MEMS spiral inductance preparation method based on flexible substrate that the present invention proposes has provided a kind of feasible high performance induction structure, above the copper coil, below and the center all plate magnetic material, significantly improved the performance of inductance.Can obtain the flexible inductance of little, the high Q value of area by the present invention, efficiently solve in traditional micro-system that the inductance area is excessive, poor performance, bio-compatibility are poor, be difficult to crooked problem.The new method that the present invention proposes has satisfied implantable MEMS simultaneously to the flexibility of inductance and the requirement of electric property, utilizes the inductance of this method preparation after tested, and L value and Q value are higher, and flexible collapsible, device size is little.
Description of drawings
Fig. 1 is the model (omitted the thin magnetic film of the top in order conveniently to find out figure, therefore also can regard as simultaneously above-mentioned not with the model of the spiral inductance of the simple structure of top magnetic core) of the spiral inductance based on flexible substrate of the present invention;
Fig. 2 is the spiral inductance preparation method's based on flexible substrate of the present invention process chart;
Fig. 3 does not of the present inventionly contain the up and down spiral inductance preparation method's of the simple structure of two-layer soft magnetic film process chart based on flexible substrate;
Fig. 4 is spiral inductance preparation method's the process chart that only contains the bottom soft magnetic film based on flexible substrate of the present invention;
Fig. 5 is the electro-coppering electron micrograph afterwards of step 7 among the preparation method of the present invention;
Fig. 6 is the plating magnetic core electron micrograph afterwards of step 9 among the preparation method of the present invention;
Fig. 7 is that the wet etching of step 10 among the preparation method of the present invention removes Seed Layer electron micrograph afterwards;
Fig. 8 be utilize that preparation method's machining of the present invention gets not with the photo after the inductance (being the inductance that following embodiment one described method makes) of two-layer thin magnetic film is peeled off from silicon substrate up and down, can find out that inductance is flexible.
Fig. 9 is the photo after the inductance with the bottom magnetic film (being the inductance that following embodiment two described methods make) that utilizes preparation method's machining of the present invention to get is peeled off from silicon substrate, can find out that inductance is flexible.
Figure 10 is the performance test results of utilizing the sandwich structure inductance that preparation method's machining of the present invention gets, and its inductance value (L value) and quality factor (Q value) are all more satisfactory.
The specific embodiment
For above-mentioned purpose of the present invention, feature, advantage can be become apparent more, below in conjunction with the drawings and specific embodiments the embodiment of the invention is described in further detail.
Set forth the preparation method's step with the sandwich spiral inductance of magnetic core based on flexible substrate provided by the invention below in conjunction with Fig. 1 to Figure 10.
Embodiment one:
Embodiment one is not for the preparation process of the inductance of top and bottom two layers thin magnetic film.Therefore step 2-4 and step 12-14 all can omit.In the present embodiment, select Parylene as backing material, iron-nickel alloy is as the material of thin magnetic film and magnetic core.
Step 1: at the Parylene film of the about 10um of silicon chip growth one deck;
Step 5: sputtered with Ti on the Parylene film/Cu Seed Layer, wherein the thickness of Ti is 15nm, the thickness of Cu is 150nm;
Step 6: thick resist lithography (AZ9260 photoresist), make coil pattern;
Step 7: the electro-coppering coil, current density is 1ASD during plating, electroplating time is 50 minutes;
Step 8: for the second time photoetching (AZ9260 photoresist), make the magnetic core position;
Step 9: the electroplating iron-nickel magnetic core, current density is 4ASD during plating, and electroplating time is 120 minutes, and the proportioning of iron nickel is 20:80 in the electroplate liquid;
Step 10: acetone removes photoresist, and wet etching goes Seed Layer (copper corrosion liquid adopts the mixed solution of glacial acetic acid and hydrogen peroxide, and the titanium corrosive liquid adopts the aqueous solution of hydrofluoric acid);
Step 11: on coil, cover one deck Parylene film;
Step 15: the Parylene inductance is peeled off from silicon substrate.
With reference to Fig. 3, Fig. 3 is the spiral inductance preparation method's of the simple structure based on flexible substrate of the present invention process chart.Processes process described in the above steps is preparation method's of the present invention step, by Twi-lithography and twice plating, has realized the high Q value inductance on the flexible substrate.
With reference to Fig. 5, Fig. 5 is that inductance of the present invention is through the electron micrograph after the plating of step 5.
With reference to Fig. 6, Fig. 6 is that inductance of the present invention is through the electron micrograph after the plating of step 7.
With reference to Fig. 7, Fig. 7 is that inductance of the present invention is through the electron micrograph after the plating of step 8.
With reference to Fig. 8, Fig. 8 is the finished figure of the spiral inductance of the simple structure based on the Parylene substrate of the present invention, can see that the Parylene substrate is transparence, and the volume of inductance is very little, and is flexible.
Embodiment two:
Embodiment two is not for the preparation process of the inductance of top thin magnetic film.Therefore step 12-14 all can omit.In the present embodiment, select PDMS as backing material, ferro-cobalt is as the material of thin magnetic film and magnetic core.
Step 1: at the PDMS film of the about 15um of silicon chip growth one deck;
Step 2: sputtered with Ti on the PDMS film/Cu Seed Layer, wherein the thickness of Ti is 20nm, the thickness of Cu is 200nm;
Step 3: electroplate the ferro-cobalt thin magnetic film, current density is 2ASD during plating, and electroplating time is 180 minutes, and the proportioning of ferro-cobalt is 70:30 in the electroplate liquid;
Step 4: at the PDMS film of the about 15um of thin magnetic film growth one deck;
Step 5: sputtered with Ti on the PDMS film/Cu Seed Layer, wherein the thickness of Ti is 20nm, the thickness of Cu is 200nm.
Step 6: thick resist lithography (AZ4620 photoresist), make coil pattern;
Step 7: the electro-coppering coil, current density is 1ASD during plating, electroplating time is 70 minutes;
Step 8: again photoetching (AZ4620 photoresist), make the magnetic core position;
Step 9: electroplate the ferro-cobalt magnetic core, current density is 2ASD during plating, and electroplating time is 180 minutes, and the proportioning of ferro-cobalt is 70:30 in the electroplate liquid;
Step 10: acetone removes photoresist, and wet etching goes Seed Layer (copper corrosion liquid adopts the mixed solution of glacial acetic acid and hydrogen peroxide, and the titanium corrosive liquid adopts the aqueous solution of hydrogen peroxide);
Step 11: the PDMS film of the about 10um of growth one deck;
Step 15: the PDMS inductance is peeled off from silicon substrate.
With reference to Fig. 1, Fig. 1 is the model with the spiral inductance of bottom magnetic film based on flexible substrate of the present invention.
With reference to Fig. 4, Fig. 4 is the spiral inductance preparation method's of the band bottom NiFe thin film based on flexible substrate of the present invention process chart.Processes process described in the above steps is preparation method's of the present invention step, by Twi-lithography and twice plating, has realized the high Q value inductance on the flexible substrate.
With reference to Fig. 9, Fig. 9 is the finished figure with the spiral inductance of bottom magnetic film based on the PDMS substrate of the present invention.
Embodiment three:
Embodiment three is the preparation process based on the sandwich structure spiral inductance of flexible substrate.In the present embodiment, select Parylene as backing material, iron-nickel alloy is as the material of thin magnetic film and magnetic core.
Step 1: at the Parylene film of the about 10um of silicon chip growth one deck;
Step 2: sputtered with Ti on the Parylene film/Cu Seed Layer, wherein the thickness of Ti is 10nm, the thickness of Cu is 100nm;
Step 3: the electroplating iron-nickel thin magnetic film, current density is 4ASD during plating, and electroplating time is 100 minutes, and the proportioning of iron nickel is 7:93 in the electroplate liquid;
Step 4: at the Parylene film of the about 10um of thin magnetic film growth one deck;
Step 5: sputtered with Ti on the Parylene film/Cu Seed Layer, wherein the thickness of Ti is 10nm, the thickness of Cu is 100nm;
Step 6: thick resist lithography (AZ9260 photoresist), make coil pattern;
Step 7: the electro-coppering coil, current density is 1ASD during plating, electroplating time is 60 minutes;
Step 8: again photoetching (AZ9260 photoresist), make the magnetic core position;
Step 9: the electroplating iron-nickel magnetic core, current density is 4ASD during plating, and electroplating time is 100 minutes, and the proportioning of iron nickel is 7:93 in the electroplate liquid;
Step 10: acetone removes photoresist, and wet etching goes Seed Layer (copper corrosion liquid adopts the mixed solution of glacial acetic acid and hydrogen peroxide, and the titanium corrosive liquid adopts the aqueous solution of hydrofluoric acid);
Step 11: the Parylene film of the about 10um of growth one deck;
Step 12: sputtered with Ti on the Parylene film/Cu Seed Layer, wherein the thickness of Ti is 10nm, the thickness of Cu is 100nm;
Step 13: the electroplating iron-nickel thin magnetic film, current density is 4ASD during plating, and electroplating time is 100 minutes, and the proportioning of iron nickel is 7:93 in the electroplate liquid;
Step 14: the Parylene film that covers again the about 10um of one deck in the above;
Step 15: the Parylene inductance is peeled off from silicon substrate.
With reference to Fig. 1, Fig. 1 be the sandwich structure spiral inductance based on flexible substrate of the present invention model (because).The width of coil is 200um, and spacing is 50um, and thickness is 10um, and the number of turn is 4.The radius of magnetic core is 1000um.
With reference to Fig. 2, Fig. 2 is the sandwich structure spiral inductance preparation method's based on flexible substrate of the present invention process chart.Processes process described in the above-mentioned steps 1-15 reaches and is preparation method's of the present invention step, by process shown in Figure 2, has realized the high Q value inductance on the flexible substrate.
The film wrapped because the finished figure top of sandwich structure spiral inductance and bottom all are magnetic, coil and magnetic core in the middle of therefore can't directly seeing, the signal of therefore having omitted finished figure.
More than a kind of sandwich structure spiral inductance preparation method based on flexible substrate provided by the present invention is described in detail, used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications.In sum, this description should not be construed as limitation of the present invention.
Claims (9)
1. the preparation method based on the spiral inductance of flexible polymer substrate comprises the steps: in order
(A) Grown fexible film;
(A1) that chooses wantonly sputtering seed layer on film is electroplated magnetic material, the growth fexible film;
(A2) sputtering seed layer of choosing wantonly;
(B) electroplate coil;
(C) electroplate magnetic core;
Optional step (C1) is removed photoresist and is removed Seed Layer;
(D) growth fexible film;
(D1) that chooses wantonly sputtering seed layer on film is electroplated magnetic material, the growth fexible film;
(E) peel off inductance, obtain the sandwich structure spiral inductance of flexible polymer substrate.
2. the method for claim 1 is characterized in that:
Step (A) substrate is silicon substrate, and fexible film is Parylene, polyimides or dimethyl silicone polymer film;
Step (B) is electroplated coil and is comprised thick resist lithography, makes coil pattern, the electro-coppering coil; Photoresist is AZ9260, AZ4620, and the thickness of whirl coating is 10-15um;
Step (C) is electroplated magnetic core and is comprised thick resist lithography, makes the magnetic core position, electroplates magnetic core;
The fexible film of deposition is Parylene, polyimides or dimethyl silicone polymer film in the step (D);
Step (E) is peeled off as directly peeling off by hand.
3. method as claimed in claim 1 or 2 is characterized in that:
Step (A) flexible material film thickness is 8-15um;
The described Seed Layer of step (A1) is Ti/Cu, and the thickness of Ti is 10-30nm, and the thickness of Cu is 100-300nm, first deposit Ti, again deposit Cu; The plating magnetic material is iron-nickel alloy, ferro-cobalt; Electroplating time is 90-120 minute, electroplates density 2-4ASD; Fexible film thickness is 8-15um;
Step (A2) Seed Layer is Ti/Cu, and the thickness of Ti is 10-30nm, and the thickness of Cu is 100-300nm, first deposit Ti, again deposit Cu;
The described electroplating time of step (B) is 50-70 minute, and the current density during plating is 1ASD;
The described magnetic core of step (C) is iron-nickel alloy, ferro-cobalt, cobalt nickel manganese phosphorus alloy, when adopting iron-nickel alloy in the electroplate liquid ratio of iron and nickel be 20:80,30:70 or 40:60; Electroplating time is 90-120 minute, and the current density during plating is 2-4ASD;
Step (C1) is that wet etching removes photoresist and remove Seed Layer, and process is put into organic solvent with sample and finished, and goes the process of Seed Layer to adopt the method for wet etching; If Seed Layer is Ti and Cu, then method is first sample to be put into copper corrosion liquid, sample is put into the titanium corrosive liquid with clean rear taking-up of titanium corrosion after copper corrosion is clean again, and is rinsed well with deionized water;
Step (D) flexible material film thickness is 8-15um;
Step (D1) Seed Layer is Ti/Cu, and the thickness of Ti is 10-30nm, and the thickness of Cu is 100-300nm, first deposit Ti, again deposit Cu; The plating magnetic material is iron-nickel alloy, ferro-cobalt; Electroplating time is 90-120 minute, electroplates density 2-4ASD; Fexible film thickness is 8-15um.
4. method as claimed in claim 3 is characterized in that:
Film thickness is 10um in the step (A), and film is parylene film;
The thickness of Ti is 15nm in the step (A1), and the thickness of Cu is 150nm;
Photoresist thickness is 10um in the step (B);
Step (C) electroplating iron-nickel magnetic core, the solution composition of use mainly contains nickelous sulfate, nickel chloride, ferrous sulfate, and the plating pulse is 4ASD, and electroplating time is 100min;
Acetone removes photoresist in the step (C1), and copper corrosion liquid main component is glacial acetic acid and hydrogen peroxide, and the corrosion Cu time is 60s-70s, and the titanium corrosive liquid is hydrofluoric acid, and the time is 40s-60s;
The thick parylene film of step (D) growth 10um.
5. the spiral inductance based on flexible polymer substrate is characterized in that: adopt the method preparation of one of claim 1-4.
6. spiral inductance claimed in claim 5 is characterized in that: it is optional possess top thin magnetic film and/or the optional inductance that possesses the bottom magnetic film.
7. a spiral inductance claimed in claim 5 is characterized in that: the spiral inductance that is sandwich structure.
8. the purposes of a spiral inductance as claimed in claim 5 is characterized in that: be used for various biologies and abiotic micro-system.
9. a purposes as claimed in claim 6 is characterized in that: the wireless energy transfer system that is used for implanted.
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| CN114334335A (en) * | 2021-12-30 | 2022-04-12 | 杭州电子科技大学 | Magnetic element with multilayer magnetic core |
| CN114843067A (en) * | 2022-04-18 | 2022-08-02 | 电子科技大学 | Flexible inductor and preparation method thereof |
| CN115072655A (en) * | 2022-07-22 | 2022-09-20 | 中国电子科技集团公司第五十八研究所 | Wafer-level preparation method of biocompatible micro solenoid |
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| CN107705971A (en) * | 2017-08-30 | 2018-02-16 | 歌尔股份有限公司 | A kind of manufacture method of coil, coil, electronic equipment |
| CN107705976A (en) * | 2017-08-30 | 2018-02-16 | 歌尔股份有限公司 | A kind of manufacture method of coil, coil, electronic equipment |
| CN114334335A (en) * | 2021-12-30 | 2022-04-12 | 杭州电子科技大学 | Magnetic element with multilayer magnetic core |
| CN114843067A (en) * | 2022-04-18 | 2022-08-02 | 电子科技大学 | Flexible inductor and preparation method thereof |
| CN115072655A (en) * | 2022-07-22 | 2022-09-20 | 中国电子科技集团公司第五十八研究所 | Wafer-level preparation method of biocompatible micro solenoid |
| CN115072655B (en) * | 2022-07-22 | 2022-11-11 | 中国电子科技集团公司第五十八研究所 | Wafer-level preparation method of biocompatible micro solenoid |
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