CN103036403B - A kind of based on numerically controlled high-power IGBT driver - Google Patents
A kind of based on numerically controlled high-power IGBT driver Download PDFInfo
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- CN103036403B CN103036403B CN201210524631.4A CN201210524631A CN103036403B CN 103036403 B CN103036403 B CN 103036403B CN 201210524631 A CN201210524631 A CN 201210524631A CN 103036403 B CN103036403 B CN 103036403B
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Abstract
The present invention relates to IGBT driver design field, be specifically related to a kind of based on numerically controlled high-power IGBT driver.IGBT driver includes driving master control borad and driving adaptation board；Master control borad is driven to be connected with three lead-out terminals driving adaptation board by high-voltage insulating wire；Drive adaptation board to be connected by screw is fixing with colelctor electrode, grid and three terminals of emitter stage of IGBT device, drive master control borad and use single high-voltage conducting wires to be connected between the colelctor electrode driving adaptation board being arranged on IGBT；Drive master control borad and between the grid and the emitter stage that drive adaptation board that are arranged on IGBT, use multiple twin high-voltage conducting wires to be connected；Described driving master control borad has single supply input and is converted to drive dual power supply output function；Adaptation board is driven to have the function of gate protection and active clamp.The driver of the present invention has safe and reliable advantage, and it is simple, intelligent to have control by numerically controlled IGBT driver, it is possible to controls the detailed process that IGBT is switched on or off, has the advantage of uniqueness.
Description
Technical field
The present invention relates to IGBT driver design field, be specifically related to a kind of based on numerically controlled high-power IGBT driver.
Background technology
Development and the development of turn-off device along with modular multi-level flexible direct-current transmission technology; power and the electric pressure of the IGBT turn-off device that converter valve submodule uses are more and more higher; therefore its gate-drive condition is more and more higher, opens turn-off characteristic and short-circuit protection function reliably and has higher requirement to the design of high-power IGBT driver.Existing IGBT driver is substantially and is made up of simple analog circuit, and the process that can only turn on and off IGBT carries out the simple control of entirety, can not the detailed process that is switched on or off of the control of intelligence, change the size of open resistance the most dynamically.The IGBT driver that it is main that the most traditional simulation controls can not meet the demand of high-power IGBT, and numerically controlled IGBT driver to have control simple, intelligent, just can control, by programming, the detailed process that IGBT is switched on or off, there is the advantage of uniqueness.
Summary of the invention
For the deficiencies in the prior art, the present invention provides a kind of based on numerically controlled high-power IGBT driver, the driver of the present invention has safe and reliable advantage, and it is simple, intelligent to have control by numerically controlled IGBT driver, the detailed process that IGBT is switched on or off can be controlled, there is the advantage of uniqueness.
It is an object of the invention to use following technical proposals to realize:
A kind of based on numerically controlled high-power IGBT driver, it thes improvement is that, described IGBT driver includes driving master control borad and driving adaptation board；Described driving master control borad is connected with three lead-out terminals driving adaptation board by high-voltage insulating wire；Described driving adaptation board is connected by screw is fixing with colelctor electrode, grid and three terminals of emitter stage of IGBT device, uses single high-voltage conducting wires to be connected between described driving master control borad and the colelctor electrode driving adaptation board being arranged on IGBT；Multiple twin high-voltage conducting wires is used to be connected between described driving master control borad and the grid and the emitter stage that drive adaptation board that are arranged on IGBT；Described driving master control borad has single supply input and is converted to drive dual power supply output function；Described driving adaptation board has the function of gate protection and active clamp.
Wherein, described driving master control borad includes driving power supply, the interface circuit of peripheral control unit, main control chip and peripheral circuit；Described driving power supply is connected with interface circuit, main control chip and the peripheral circuit of peripheral control unit respectively, and interface circuit, main control chip and peripheral circuit for peripheral control unit are powered；The interface circuit of described peripheral control unit communicates with peripheral control unit.
Wherein, the interface circuit of described peripheral control unit uses two-way optical fiber interface to communicate with peripheral control unit；One tunnel feeds back to peripheral control unit to the main control chip of driver, a road for the triggering normal signal produced by main control chip or fault-signal order output for peripheral control unit sends control pulse command.
Wherein, described driving power supply includes being sequentially connected with isolating transformer and power converting circuit；Described power converting circuit uses reference power supply chip and peripheral circuit thereof, converts input voltage into required voltage scope by isolating transformer.
Wherein, by isolating transformer and power supply chip, input voltage range 9-30V is converted to required 15V and 5V DC voltage.
Wherein, described main control chip uses digital control chip, for realizing control and the protection of IGBT device.
Wherein, described digital control chip uses FPGA or CPLD digital control chip.
Wherein, main control chip and peripheral circuit include main control chip circuit, drive resistance to arrange circuit, single supply input dual power supply output circuit.
Wherein, described driving resistance arranges circuit and arranges at least one tunnel open resistance and close resistance break, during the turning on and off of IGBT device, controls to select the wherein above open resistance in a road or a road and close resistance break by main control chip.
Wherein, described single supply input dual power supply output circuit, for main control chip in controlling IGBT device switching process, regulation drives the output grid of master control borad and the current potential of emitter stage to be 15V or 0V；If output grid is 15V, launch extremely 0V, then IGBT driver exports positive 15V, controls IGBT device conducting；If output grid is 0V, launches extremely 15V, the then negative 15V of IGBT driver output, control IGBT device and turn off.
Wherein, described driving adaptation board includes gate protection circuit and active clamp circuit.
Wherein, described gate protection circuit include the noninductive Absorption Capacitance of parallel connection, clamp resistance and Transient Suppression Diode TVS (noninductive electric capacity be provided for improving driving voltage waveform, absorption circuit connects the oscillating voltage that inductance brings；Offer current potential when being provided for turning off for IGBT device of resistance；The voltage being provided between clamper grid and emitter stage of Transient Suppression Diode).
Wherein, described active clamp circuit is constituted (number of Zener diode determines) according to the colelctor electrode clamp voltage size of the IGBT of active clamp circuit by n the Zener diode being connected between colelctor electrode C and grid E and 1 high-voltage diode.
Wherein, the multiple twin every centimetre that described multiple twin high-voltage conducting wires connects is more than two circles, and line length is not more than 30 centimetres.(more than two circles, multiple twin every centimetre ensures that the degree of multiple twin is big, and twisted-pair feeder twists the tightst).
Compared with the prior art, the present invention reaches to provide the benefit that:
1, the present invention provides a kind of based on numerically controlled and reliable driver for high-power IGBT, and power supply is required low by this driver, voltage range width, for 9V-30V DC voltage, the process that turns on and off of IGBT can be regulated dynamically, control simple, be suitable for the IGBT of different model.
2, the IGBT driver of the present invention has the function of single supply input dual power supply output, it is not necessary to additional designs negative supply, the Power Management Design making driver is the most simple and reliable.
3, the driving power supply of the IGBT driver that the present invention provides has wide input voltage range, isolation voltage high, and drives the dual power supply of output by driving the internal generation of control chip, reduces the complexity of Power Management Design.The input and the fault-signal feedback that control pulse use optical fiber interface, achieve again the isolation of peripheral control unit and driver while improve anti-interference.The use of digital control chip makes the driving process of IGBT to regulate dynamically, more intelligent.Drive the design of adaptation board so that driver is tightr with the connection of IGBT, and loop inductance is minimum.
4, the present invention uses software to design different drivings according to the IGBT of different model, and does not spend amendment hardware circuit, and the size selecting driving resistance of dynamic, optimizes whole driving process.
Accompanying drawing explanation
Fig. 1 be the present invention provide based on numerically controlled high-power IGBT driver principles figure；
Wherein: 1 for driving master control borad；11 for driving power supply；12 is the interface circuit of peripheral control unit；13 is main control chip and peripheral circuit；2 for driving adaptation board；3 is power input interface；4 is optical fiber interface；5 is output interface；For colelctor electrode；G is grid；E is emitter stage；C1 is noninductive electric capacity；R1 is clamp resistance；TVS is Transient Suppression Diode；Zn is Zener diode；D is high-voltage diode.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in further detail.
The design of the IGBT driver of the present invention includes driving Power Management Design, the interface circuit design of peripheral control unit, main control chip and periphery circuit design and the design of driving adaptation board.Drive power supply to have wide input voltage range, isolation voltage high, and drive the dual power supply of output by driving the internal generation of Master control chip, eliminate the design of negative supply, reduce the complexity of Power Management Design.The feedback output of the input and normal signal or fault-signal that control pulse uses optical fiber interface, and capacity of resisting disturbance is strong.The use of digital control chip makes the driving process of IGBT to regulate dynamically, more intelligent.Drive the design of adaptation board so that driver is tightr with the connection of IGBT, and loop inductance is minimum.
The present invention provide based on numerically controlled high-power IGBT driver principles as it is shown in figure 1, IGBT driver includes driving master control borad 1 and driving adaptation board 2；Master control borad 1 is driven to be connected with three lead-out terminals driving adaptation board 2 by high-voltage conducting wires；Drive adaptation board 2 to be connected by screw is fixing with colelctor electrode C, grid G and three terminals of emitter E of IGBT device, drive and use single high-voltage conducting wires to be connected between master control borad 1 and the colelctor electrode C of IGBT device；Drive and between master control borad 1 and grid G and the emitter E of IGBT device, use multiple twin high-voltage conducting wires to be connected, it is desirable to multiple twin every centimetre is more than two circles, and line length is not more than 30 centimetres in principle.Drive master control borad 1 to have single supply input to be converted to drive dual power supply output function；Adaptation board 2 is driven to have the function of gate protection and active clamp.
One, master control borad 1 is driven: include driving power supply 11, the interface circuit 12 of peripheral control unit, main control chip and peripheral circuit 13；Drive power supply 11 to be connected with interface circuit 12, main control chip and the peripheral circuit 13 of peripheral control unit respectively, power 13 for interface circuit 12, main control chip and the peripheral circuit of peripheral control unit；The interface circuit 12 of peripheral control unit is connected with main control chip and peripheral circuit 13.
(1) design of power supply 11 is driven: use based on transformator and the power converting circuit of reference power supply chip.Power supply 11 is driven to include isolating transformer and the power converting circuit being sequentially connected with；Described power converting circuit uses power supply chip, and the driving power supply 11 of this driver has wide input voltage range, the feature that isolation voltage is high.From power input interface 3 input voltage, by isolating transformer and power supply chip, the voltage that input voltage range is 9-30V being converted to 15V and 5V, input and output isolation voltage can reach more than 6kV.15V gives and drives the peripheral circuit on master control borad to power, and arranges the driving resistance on circuit including driving resistance；5V powers to main control chip.Wider input voltage range reduces the driver of the present invention requirement to power supply.
(2) interface circuit 12 of peripheral control unit designs: the interface circuit 12 of peripheral control unit includes controlling pulse input interface and fault-signal output interface, control pulse input interface and fault-signal output interface all uses optical fiber interface 4, driver to export with the feedback that unique interface is the input and normal signal or fault-signal that control pulse of peripheral control unit.Owing to peripheral control unit and driver need isolation, and driver breaks down and should not affect the work of peripheral control unit, the present invention uses optical fiber interface 4 to export for the feedback controlling pulse input and normal signal or fault-signal, achieves again the isolation of peripheral control unit and driver while improve anti-interference.
(3) main control chip and peripheral circuit 13 design: the core of driver is to employ digital control chip, are realized the various functions driven by programming Control.IGBT driver is under the electromagnetic environment of high-voltage great-current and works, and therefore the anti-electromagnetic interference capability of control chip must be the strongest.The present invention selects FPGA or the CPLD digital control chip of military project level to coordinate its peripheral circuit as the main control chip of driver, it is achieved that numerically controlled function in turn ensure that the reliability of driver.Meanwhile, by the control of main control chip, can arbitrarily regulate the output grid of master control borad and the current potential of emitter stage is 15V or 0V.If output grid is 15V, launch extremely 0V, then IGBT driver exports positive 15V from output interface 5, controls IGBT device conducting；If output grid is 0V, launch extremely 15V, then IGBT driver is from the negative 15V of output interface 5 output, controls IGBT device and turns off.It is arranged such, it is achieved that the dual power supply under single supply is powered exports, and eliminates the design of negative supply, and the Power Management Design making driver is the most simple and reliable.
Main control chip realizes PCI circuit input control wave and exports, by after driver, the driving pulse that corresponding pulsewidth can drive IGBT to turn on and off, signals such as driving normal and short trouble is reported peripheral control unit by the signal feedback optical fiber interface of PCI circuit, it is achieved driver and the interactive function of peripheral control unit simultaneously.The dual power supply simultaneously passed through under the single supply of the control realization to output grid and emitter stage current potential inputs exports.Arrange different multichannel on this peripheral circuit drive open resistance and close resistance break, open resistance can be driven by any one road of selection of control chip and close resistance break, thus control IGBT dynamically turn on and off process so that whole switching process optimization.
(4) design of adaptation board 2 is driven: C, G, E tri-of driving adaptation board 2 to be directly connected to IGBT extremely go up so that loop inductance is minimum.Adaptation board 2 is driven to include gate protection circuit and active clamp circuit.Protection circuit includes noninductive electric capacity, clamp resistance and the Transient Suppression Diode TVS of parallel connection；Noninductive electric capacity be provided for improving driving voltage waveform, absorption circuit connects the oscillating voltage that inductance brings；Avoid grid potential to raise to mislead；Offer grid potential when being provided for turning off for IGBT device of clamp resistance, it is to avoid the too high IGBT of grid potential misleads；The voltage being provided between clamper grid and emitter stage of Transient Suppression Diode TVS, prevents the grid of too high voltage breakdown IGBT, is chosen as 16V.
Active clamp circuit is made up of n the Zener diode being connected between colelctor electrode C and grid E and 1 high-voltage diode；The number of Zener diode determines according to the colelctor electrode clamp voltage size of the IGBT of active clamp circuit.
Finally should be noted that: above example is only in order to illustrate that technical scheme is not intended to limit, although the present invention being described in detail with reference to above-described embodiment, those of ordinary skill in the field are it is understood that still can modify or equivalent to the detailed description of the invention of the present invention, and without departing from any amendment of spirit and scope of the invention or equivalent, it all should be contained in the middle of scope of the presently claimed invention.
Claims (1)
1. one kind based on numerically controlled high-power IGBT driver, it is characterised in that described IGBT driver includes driving master control borad and driving adaptation board；Described driving master control borad is connected with three lead-out terminals driving adaptation board by high-voltage insulating wire；Described driving adaptation board is connected by screw is fixing with colelctor electrode, grid and three terminals of emitter stage of IGBT device, uses single high-voltage conducting wires to be connected between described driving master control borad and the colelctor electrode of IGBT device；Described driving master control borad is connected with using multiple twin high-voltage conducting wires between the grid being arranged on IGBT device and emitter stage；Described driving master control borad has single supply input and is converted to drive dual power supply output function；Described driving adaptation board has the function of gate protection and active clamp；
Described driving master control borad includes driving power supply, the interface circuit of peripheral control unit, main control chip and peripheral circuit；Described driving power supply is connected with interface circuit, main control chip and the peripheral circuit of peripheral control unit respectively, and interface circuit, main control chip and peripheral circuit for peripheral control unit are powered；The interface circuit of described peripheral control unit communicates with peripheral control unit；
The interface circuit of described peripheral control unit uses two-way optical fiber interface to communicate with peripheral control unit；One tunnel feeds back to peripheral control unit to the main control chip of driver, a road for the triggering normal signal produced by main control chip or fault-signal order output for peripheral control unit sends control pulse command；
Described driving power supply includes isolating transformer and the power converting circuit being sequentially connected with；Described power converting circuit uses reference power supply chip and peripheral circuit thereof, converts input voltage into required voltage scope by isolating transformer；
By isolating transformer and power supply chip, input voltage range 9-30V is converted to required 15V and 5V DC voltage；
Described main control chip uses digital control chip, for realizing control and the protection of IGBT device；
Described digital control chip uses FPGA or CPLD digital control chip；
Main control chip and peripheral circuit include main control chip circuit, drive resistance to arrange circuit, single supply input dual power supply output circuit；
Described driving resistance arranges circuit and arranges at least one tunnel open resistance and close resistance break, during the turning on and off of IGBT device, controls to select the wherein above open resistance in a road or a road and close resistance break by main control chip；
Described single supply input dual power supply output circuit, for main control chip in controlling IGBT device switching process, regulation drives the output grid of master control borad and the current potential of emitter stage to be 15V or 0V；If output grid is 15V, launch extremely 0V, then IGBT driver exports positive 15V, controls IGBT device conducting；If output grid is 0V, launches extremely 15V, the then negative 15V of IGBT driver output, control IGBT device and turn off；
Described driving adaptation board includes gate protection circuit and active clamp circuit；
Described gate protection circuit includes noninductive Absorption Capacitance, clamp resistance and the Transient Suppression Diode TVS of parallel connection；
Described active clamp circuit is made up of n the Zener diode being connected between colelctor electrode C and grid E and 1 high-voltage diode；
The multiple twin every centimetre that described multiple twin high-voltage conducting wires connects is more than two circles, and line length is not more than 30 centimetres.
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| CN201210524631.4A CN103036403B (en) | 2012-12-07 | 2012-12-07 | A kind of based on numerically controlled high-power IGBT driver |
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| CN103199678B (en) * | 2013-04-17 | 2015-05-20 | 国电南瑞科技股份有限公司 | Compact type insulated gate bipolar transistor (IGBT) module driving unit |
| CN103337970A (en) * | 2013-06-26 | 2013-10-02 | 永济新时速电机电器有限责任公司 | Novel IGBT configuration circuit board device applicable to high-power electric locomotive |
| CN104158385B (en) * | 2014-09-03 | 2016-08-24 | 永济新时速电机电器有限责任公司 | Gate pole absorbs suppression circuit module |
| DE102015103247A1 (en) * | 2015-03-05 | 2016-09-08 | Ge Energy Power Conversion Technology Limited | Switch module with short-circuit protection and power electronics module with this |
| CN106300931A (en) * | 2016-09-30 | 2017-01-04 | 许继电源有限公司 | A kind of numerical control and simulation hybrid driving circuit structure |
| CN107404216B (en) * | 2017-06-22 | 2019-10-01 | 江苏广义牵引技术研究所有限公司 | Universal high-power IGBT drive control device and control method |
| CN109787454A (en) * | 2017-11-13 | 2019-05-21 | 中车株洲电力机车研究所有限公司 | A kind of high-power IGBT driver and its creation method |
| CN110601520A (en) * | 2019-09-02 | 2019-12-20 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
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Address after: 102209 Beijing City, Changping District science and Technology Park in the future smart grid research institute hospital Co-patentee after: CHINA-EPRI ELECTRIC POWER ENGINEERING Co.,Ltd. Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Co-patentee after: DALIAN POWER SUPPLY COMPANY, STATE GRID LIAONING ELECTRIC POWER Co.,Ltd. Co-patentee after: State Grid Corporation of China Address before: 102211 Beijing city Changping District Xiaotangshan town big East Village Road No. 270 (future technology city) Co-patentee before: CHINA-EPRI ELECTRIC POWER ENGINEERING Co.,Ltd. Patentee before: STATE GRID SMART GRID Research Institute Co-patentee before: DALIAN POWER SUPPLY COMPANY OF LIAONING ELECTRIC POWER Co.,Ltd. Co-patentee before: State Grid Corporation of China |
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Effective date of registration: 20170531 Address after: 102209 Beijing City, Changping District science and Technology Park in the future smart grid research institute hospital Co-patentee after: DALIAN POWER SUPPLY COMPANY, STATE GRID LIAONING ELECTRIC POWER Co.,Ltd. Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Co-patentee after: State Grid Corporation of China Address before: 102209 Beijing City, Changping District science and Technology Park in the future smart grid research institute hospital Co-patentee before: CHINA-EPRI ELECTRIC POWER ENGINEERING Co.,Ltd. Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co-patentee before: DALIAN POWER SUPPLY COMPANY, STATE GRID LIAONING ELECTRIC POWER Co.,Ltd. Co-patentee before: State Grid Corporation of China |