CN103035776A - Improved method for polycrystalline silicon solar cell temperature varying diffusion process - Google Patents
Improved method for polycrystalline silicon solar cell temperature varying diffusion process Download PDFInfo
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- CN103035776A CN103035776A CN2011102982148A CN201110298214A CN103035776A CN 103035776 A CN103035776 A CN 103035776A CN 2011102982148 A CN2011102982148 A CN 2011102982148A CN 201110298214 A CN201110298214 A CN 201110298214A CN 103035776 A CN103035776 A CN 103035776A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses an improved method for a polycrystalline silicon solar cell temperature varying diffusion process. The method mainly comprises the following steps: 1) oxidization; 2) diffusing; 3) warming; 4) deep diffusing; 5) saturation; and 6) cooling. The improved method is characterized in that a one-step warming process is added in a diffusing and junction manufacturing process, so that temperature fluctuation caused by unstable temperature control systems of temperature areas of a furnace tube during the diffusing and junction manufacturing process can be effectively controlled. Stability of the temperature during diffusing is ensured, evenness of square resistor pieces and conversion efficiency of battery pieces can be effectively ensured. The improved method for the polycrystalline silicon solar cell temperature varying diffusion process is convenient to operate, can be performed in the furnace tube continuously and cannot increase production cost.
Description
Technical field
The invention belongs to the solar cell production technical field, the method can apply in the polycrystalline silicon solar cell diffusion technology.
Background technology
Polycrystalline silicon solar cell has occupied absolute leading status in photovoltaic market, and this status was difficult to change within the from now on a very long time, therefore improve polycrystalline silicon solar cell efficient, reduce production costs, polycrystalline silicon solar cell can be at war with conventional energy resource becomes the now theme in photovoltaic epoch.Because fault of construction and a large amount of metal impurities such as the crystal boundary of polysilicon meeting generation higher density in casting process, dislocation, microdefects, these metal impurities all can become dark energy level and form the complex centre, thereby affect battery conversion efficiency.All take the alternating temperature diffusion technology to replace the constant temperature diffusion in order to raise the efficiency many companies.Because the Cryogenic Temperature Swing diffusion technology can more effective minimizing the compound simultaneously effect to the phosphorus gettering of few son more abundant.The domestic Cryogenic Temperature Swing diffusion technology of doing adopts domestic boiler tube equipment mostly, but has thereupon also brought some problems.Home equipment causes each warm area temperature unstable owing to the temperature-controlling system shakiness, thereby causes sheet resistance fluctuation and doping content gradient not to form, and like this sintering has been produced very high requirement.Now adopt the fluctuation that this alternating temperature diffusion technology can each warm area temperature of effectively control.Like this uniformity between the sheet resistance sheet and cell piece conversion efficiency have all been obtained effective assurance.
Summary of the invention
The object of the present invention is to provide a kind of polycrystalline silicon solar cell alternating temperature diffusion technology of improvement.
The technical solution adopted in the present invention is: large nitrogen and dried oxygen technological parameter when controlling a series of diffusion, in the alternating temperature diffusion process, insert a step temperature-rise period, make it to be applicable in the alternating temperature diffusion technology of polycrystalline silicon solar cell, its step mainly was divided into for six steps, specifically comprised following six steps:
(1) silicon chip is put into diffusion furnace, temperature is controlled at 810 ℃ ~ 820 ℃, pass into large nitrogen and the dried oxygen of 3000sccm of 25000sccm again, the time of passing into is 300s.
(2) spread, temperature is controlled at 810 ℃ ~ 820 ℃, pass into again the large nitrogen of 25000sccm, the dried oxygen of 1200sccm and the little nitrogen of 1500sccm, the time of passing into is controlled at 600s.
(3) carry out hyperthermic treatment, temperature is raised to 860 ℃ ~ 870 ℃, and pass into large nitrogen and dried oxygen, the heating-up time is 300s.
(4) deeply spread, temperature is controlled at 860 ℃ ~ 870 ℃, pass into again the large nitrogen of 25000sccm, the dried oxygen of 1200sccm and the little nitrogen of 1500sccm, be 1300s diffusion time.
(5) saturated: pass into the large nitrogen of 25000sccm and the dried oxygen of 2000sccm, the time that wherein passes into is 500s.
(6) processing of lowering the temperature is with silicon chip extracting.
Compared with prior art, the present invention can better control the variation of each warm area temperature, and uniformity between the sheet resistance sheet and cell piece conversion efficiency have all been obtained effective assurance.The present invention is easy to operate, can carry out continuously in boiler tube, and not increase production cost.
Embodiment 1
Below in conjunction with example the present invention is described in further detail.
The object of the present invention is to provide a kind of polycrystalline silicon solar cell alternating temperature diffusion technology of improvement.This technique can well control that uniformity is effectively guaranteed battery conversion efficiency between the square resistor disc.
The present invention includes following six steps:
(1) silicon chip is put into diffusion furnace, temperature is controlled at 810 ℃ ~ 820 ℃, pass into large nitrogen and the dried oxygen of 3000sccm of 25000sccm again, the time of passing into is 300s.
(2) spread, temperature is controlled at 810 ℃ ~ 820 ℃, pass into again the large nitrogen of 25000sccm, the dried oxygen of 1200sccm and the little nitrogen of 1500sccm, the time of passing into is controlled at 600s.
(3) carry out hyperthermic treatment, temperature is raised to 860 ℃ ~ 870 ℃, and pass into large nitrogen and dried oxygen, the heating-up time is 300s.
(4) deeply spread, temperature is controlled at 860 ℃ ~ 870 ℃, pass into again the large nitrogen of 25000sccm, the dried oxygen of 1200sccm and the little nitrogen of 1500sccm, be 1300s diffusion time.
(5) saturated: pass into the large nitrogen of 25000sccm and the dried oxygen of 2000sccm, the time that wherein passes into is 500s.
(6) processing of lowering the temperature is with silicon chip extracting.
Be elaborated below by the case of implementing.
Select resistivity at 0.5 Ω cm ~ 6 Ω cm, silicon wafer thickness is totally 200 of the A level polysilicon sheets of 240 ± 20 μ m.Through once cleaning, corrode making herbs into wool, and the attenuate amount of silicon chip is controlled at 0.4g ~ 0.5g.Again 200 polysilicon chips are put into diffusion furnace, carry out as above alternating temperature DIFFUSION TREATMENT.After get the size that wherein six (two of fire doors, in the stove two, two on stove tails) survey its square resistance, as shown in table 1:
Table 1
It is as shown in the table: the average square resistance of each sheet is respectively 59.4,58.6,58.4,59.2,59.2,58.8.As above data show that the square resistance between sheet all is controlled at (59 ± 1) siements/sq, between sheet the even performance of square resistance be controlled at ± 1.
Pass through following steps: plasma etching → dephosphorization silex glass → PECVD → silk screen printing → test draws 200 electrical performance data as shown in table 2 again:
Table 2
| Ncel(%) | Uoc（V） | Isc（A） | Rs（Ω） | Rsh（Ω） | FF（%） |
| 16.73 | 0.628 | 8.479 | 0.0047 | 24.79 | 76.51 |
Wherein in 200 finished product electrical performance of cell data, its every cell piece battery conversion efficiency a slice poor efficiency sheet do not occur all greater than 16.2%.As seen above data show the cell piece made from the alternating temperature diffusion technology of this invention, and sheet resistance uniformity and battery conversion efficiency have all obtained effective assurance between sheet.
Claims (3)
1. the method for the polycrystalline silicon solar cell alternating temperature diffusion technology of an improvement, its step mainly is divided into following six steps: 1) silicon chip is put into diffusion furnace, temperature is controlled at 810 ℃ ~ 820 ℃, passes into large nitrogen and the dried oxygen of 3000sccm of 25000sccm again, the time of passing into is 300s; 2) spread, temperature is controlled at 810 ℃ ~ 820 ℃, pass into again the large nitrogen of 25000sccm, the dried oxygen of 1200sccm and the little nitrogen of 1500sccm, the time of passing into is controlled at 600s; 3) carry out hyperthermic treatment, temperature is raised to 860 ℃ ~ 870 ℃, and pass into large nitrogen and dried oxygen, the heating-up time is 300s; 4) deeply spread, temperature is controlled at 860 ℃ ~ 870 ℃, pass into again the large nitrogen of 25000sccm, the dried oxygen of 1200sccm and the little nitrogen of 1500sccm, be 1300s diffusion time; 5) saturated: pass into the large nitrogen of 25000sccm and the dried oxygen of 2000sccm, the time that wherein passes into is 500s; 6) processing of lowering the temperature is with silicon chip extracting.
2. process according to claim 1 is characterized in that step (2) and (4) little nitrogen and dried oxygen flow ratio, and has increased by a step temperature-rise period in (3).
3. a kind of method of polycrystalline silicon solar cell alternating temperature diffusion technology of improvement in the claim 1, it is applied in the crystal silicon solar battery diffusion technology, has good result.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102982148A CN103035776A (en) | 2011-10-08 | 2011-10-08 | Improved method for polycrystalline silicon solar cell temperature varying diffusion process |
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| CN2011102982148A CN103035776A (en) | 2011-10-08 | 2011-10-08 | Improved method for polycrystalline silicon solar cell temperature varying diffusion process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715308A (en) * | 2014-01-08 | 2014-04-09 | 江苏宇兆能源科技有限公司 | Low-temperature varying temperature diffusion technology of polycrystalline silicon solar cell |
| CN107331731A (en) * | 2017-07-04 | 2017-11-07 | 合肥市大卓电力有限责任公司 | A kind of solar cell crystal silicon chip phosphorus diffusion method |
-
2011
- 2011-10-08 CN CN2011102982148A patent/CN103035776A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715308A (en) * | 2014-01-08 | 2014-04-09 | 江苏宇兆能源科技有限公司 | Low-temperature varying temperature diffusion technology of polycrystalline silicon solar cell |
| CN107331731A (en) * | 2017-07-04 | 2017-11-07 | 合肥市大卓电力有限责任公司 | A kind of solar cell crystal silicon chip phosphorus diffusion method |
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Application publication date: 20130410 |