CN103035565B - Method for producing semiconductor device - Google Patents
Method for producing semiconductor device Download PDFInfo
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- CN103035565B CN103035565B CN201110294756.8A CN201110294756A CN103035565B CN 103035565 B CN103035565 B CN 103035565B CN 201110294756 A CN201110294756 A CN 201110294756A CN 103035565 B CN103035565 B CN 103035565B
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Abstract
A method for producing a semiconductor device comprising steps of providing a substrate, forming a film on the substrate, removing unnecessary film materials through a chemical mechanical grinding process, and conducting the heat processing for the surface of the film through a thermal radiation source. The thermal radiation source is used for conducting heat processing for the surface of the film which is subjected to Chemical Mechanical Polishing (CMP), the contamination on the surface of the film is reduced, the probability that small projections are formed when other materials are deposited on the film is reduced and the yield is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of manufacture method of semiconductor device.
Background technology
Along with the development of semiconductor technology, integrated circuit is towards the future development of high integration.The requirement of high integration makes the live width of semiconductor device more and more less, and the formation process of reduction to integrated circuit of live width is had higher requirement.
Semiconductor device generally includes more metal layers and multilayer dielectricity layer, is formed with the interconnection line being communicated with described metal level in described dielectric layer.
In order to meet element reduce after interconnection line demand, the design of two-layer and two-layer above multiple layer metal interconnection line becomes a kind of method that very large scale integration technology adopts usually.The process of semiconductor manufacturing is normally at processing line leading portion (front end of line, FEOL) MOS transistor is formed, and the dielectric layer between orlop in MOS transistor and interconnection layer, processing line back segment (back end of line, BEOL) formed described two-layer and two-layer more than the design of multiple layer metal interconnection line.
Such as, at notification number be CN1270371C Chinese patent in disclose a kind of method forming metal interconnecting layer in semiconductor devices.
In the manufacture process of prior art BEOL, first by cmp (Chemical MechanicalPolishing, CMP) unnecessary metal layer material is removed, afterwards, form barrier layer, low K dielectric layer successively on the metal layer, wherein barrier layer is for preventing the diffusion of metal material, then can form the interconnection line between metal level in low K dielectric layer, and described low K dielectric layer is also for making mutually insulated between metal level.
But, due to polishing fluid (slurry) can be used in a cmp process, metal level is processed, after the cmp process, chemical solution in slurry, organic substance are easily adsorbed on the surface of metal level, be adsorbed with chemical solution, organic layer on surface of metal again deposited barrier layer time, small embossment (hillock) can be formed on the surface on the barrier layer of the position of chemical solution, organic substance residues, thus the yield of BEOL segment process is reduced.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of manufacture method improving the semiconductor device of yield.
In order to solve the problem, the invention provides a kind of manufacture method of semiconductor device, described manufacture method comprises:
Substrate is provided, substrate forms film;
Unnecessary thin-film material is removed by chemical mechanical milling tech;
Infrared source is adopted to heat-treat film surface.
Alternatively, described employing infrared source comprises the step that film surface is heat-treated: make the temperature of described film surface in the scope of 350 ~ 400 DEG C by thermal radiation.
Alternatively, described infrared source is ultraviolet source, and described employing infrared source comprises the step that film surface is heat-treated: adopt described ultraviolet source to irradiate to heat-treat to film surface.
Alternatively, the wavelength of described ultraviolet source is in the scope of 400nm ~ 200nm.
Alternatively, the wavelength of described ultraviolet source is 365nm.
Alternatively, the power of described ultraviolet source is in the scope of 100 ~ 500w, and the time of irradiating film surface is in the scope of 1 ~ 5 minute.
Alternatively, described employing infrared source comprises the step that film surface is heat-treated: heat-treat film surface under the vacuum environment of 0.1 ~ 0.5torr.
Alternatively, described infrared source is visible light source, and described employing infrared source comprises the step that film surface is heat-treated: adopt described visible light source to irradiate to heat-treat to film surface.
Alternatively, described infrared source is infrared light light source, and described employing infrared source comprises the step that film surface is heat-treated: adopt described infrared light light source to irradiate to heat-treat to film surface.
Alternatively, described film is metal level.
Alternatively, be also included in after layer on surface of metal heat-treated, form barrier layer, dielectric layer successively on the metal layer.
Alternatively, the material of described metal level is copper.
Alternatively, the material on described barrier layer is one or more in the carborundum of nitrating, silicon nitride.
Alternatively, the material of described dielectric layer is one or more in SiO2, SiOF, SiCOH, SiO, SiCO, SiCON.
Compared with prior art, the present invention has the following advantages:
1. infrared source is heat-treated the film surface after CMP, the chemical solution evaporation that slurry can be made to remain, make the organic substance decomposing that remains, thus reduce the pollutant of film surface, reduce the probability of the small embossment formed when depositing other materials on the membrane, and then improve yield.
2. infrared source is without the need to contacting with film surface, thus preventing pollution or damage described film surface, further improve yield.
3. alternatively, the temperature of film surface is when the scope of 350 ~ 400 DEG C, and the chemical solution, organic substance etc. of film surface can be removed efficiently.
4. alternatively, adopt ultraviolet source to heat-treat, because the wavelength of ultraviolet light is shorter, energy is comparatively strong, the efficiency that film surface temperature raises can be improved.
5. alternatively, adopt ultraviolet source to heat-treat film surface under the vacuum environment of 0.1 ~ 0.5torr, the evaporation efficiency of chemical solution can be improved.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of manufacture method one execution mode of semiconductor device of the present invention;
Fig. 2 to Fig. 5 is the side schematic view of semiconductor device one embodiment that the manufacture method of semiconductor device of the present invention is formed.
Embodiment
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, and when describing the embodiment of the present invention in detail, for ease of illustrating, described schematic diagram is example, and it should not limit the scope of protection of the invention at this.
In order to solve the problem of prior art, the invention provides a kind of manufacture method of semiconductor device, comprising: substrate is provided, substrate forms film; Unnecessary thin-film material is removed by chemical mechanical milling tech; Infrared source is adopted to heat-treat film surface.
The present invention is heat-treated film surface by infrared source, film surface temperature is raised, the chemical solution that chemical mechanical milling tech remains is by thermal evaporation, and residual organic substance decomposes, thus reach with removing film surface residue object, afterwards again when film surface deposition other materials, reduce the probability forming small embossment, thus improve yield.
With reference to figure 1, show the schematic flow sheet of manufacture method one execution mode of semiconductor device of the present invention.Particularly, described manufacture method roughly comprises the following steps:
Step S1, provides substrate, and substrate forms metal material;
Step S2, removes unnecessary metal material by CMP, forms metal level;
Step S3, adopts ultraviolet source to irradiate layer on surface of metal, to heat-treat;
Step S4, metal level after the heat treatment forms barrier layer, low K dielectric layer successively.
Below in conjunction with the drawings and specific embodiments, technical scheme of the present invention is elaborated.
Referring to figs. 2 to Fig. 5, the side schematic view of semiconductor device one embodiment that the manufacture method showing semiconductor device of the present invention is formed.The present embodiment is for BEOL, but the present invention is not restricted to this, if the residue that there is CMP at other operation stages affects the Similar Problems of yield, technical solution of the present invention also can be adopted to solve.
As shown in Figure 2, provide substrate 100, the material of described substrate 100 can be monocrystalline silicon or single-crystal silicon Germanium, or monocrystalline carbon doped silicon; Other material can also be comprised, the III-V such as such as GaAs.
In addition, be formed with device architecture (not shown) in described substrate 100, this device architecture can for the device architecture formed in semiconductor FEOL, such as MOS transistor etc.
Form metal material 101 on the substrate 100, to form metal interconnecting wires, particularly, described metal material 101 can be copper, can form described copper, but the present invention is not restricted to this by physical vapour deposition (PVD) or electric plating method.
As shown in Figure 3, remove unnecessary metal material by CMP, obtain smooth metal surface, form metal level 102.
Can use polishing fluid (slurry) in a cmp process, after the cmp process, the chemical solution in slurry, organic substance etc. can be adsorbed on the surface of metal level 102, form pollutant 105.
As shown in Figure 4, the surface of ultraviolet source (not shown) to metal level 102 is adopted to irradiate, to heat-treat.
It should be noted that, the chemical solution that slurry remains is heated and can evaporates, thus reaches the object of removal.And residual organic substance is heated and is easily decomposed into carbon dioxide and water.Wherein, carbon dioxide is that gas can depart from from the surface of metal level 102, reaches the effect of removal; And water at high temperature also easily evaporates, thus from the surface removal of metal level 102.
By removing the residue of slurry, thus produce the probability of small embossment when can reduce to deposit other materials again on metal level 102 surface.
Because organic substance just can decompose at a lower temperature, preferably, when the surface temperature of metal level 102 is elevated to the scope of 350 ~ 400 DEG C, the chemical solution, organic substance etc. on metal level 102 surface can more efficiently be removed.
In the present embodiment, adopt the surface of ultraviolet source to metal level 102 to irradiate, to increase the surface temperature of metal level 102, realize removing chemical solution, organic object.
Because the wavelength of ultraviolet light is shorter, energy is comparatively strong, can improve the efficiency that metal level 102 surface temperature raises, therefore, the present embodiment adopts ultraviolet light to heat-treat metal level 102.
The ultraviolet source of wavelength within the scope of 400nm ~ 200nm can be adopted to heat-treat metal level 102.
Particularly, the ultraviolet source being 365nm due to wavelength is Ordinary Light Sources Have in industry, in the present embodiment, the wavelength of described ultraviolet source is 365nm, the power of described ultraviolet source is in the scope of 100 ~ 500W, the time of irradiating film surface, in the scope of 1 ~ 5 minute, raises to make the surface temperature of metal level 102 and reaches predetermined temperature.
In addition, ultraviolet source is heat-treated metal level 102 under the vacuum environment of 0.1 ~ 0.5torr, can improve the evaporation efficiency of the chemical solution on metal level 102 surface further.
In the present embodiment, ultraviolet source without the need to metal level 102 surface contact, just can improve the temperature on metal level 102 surface, thus avoid the pollution to metal level 102, also can prevent ultraviolet source and metal level 102 surface contact and the destruction on metal level 102 surface of causing.
As shown in Figure 5, metal level 102 forms barrier layer 103, dielectric layer 104 successively.
Described barrier layer 103 is spread for preventing copper, particularly, the material on described barrier layer 103 comprises carborundum (the Nitrogen Doped Silicon Carbon of nitrogen, NDC) one or more, in silicon nitride, can form described barrier layer 103 by the method for chemical vapour deposition (CVD).
In the present embodiment, described dielectric layer is low K dielectric layer (dielectric coefficient scope is 3.9 ~ 2.8) or ultra-low K dielectric layer (dielectric coefficient scope is 2.5 ~ 2.8), but the present invention is not restricted to this, the other materials that also can be known to the skilled person.
Particularly, described dielectric layer is low K dielectric layer, and the material of described dielectric layer is SiO
2, one or more in SiOF, SiCOH, SiO, SiCO, SiCON.
Described dielectric layer is ultra-low K dielectric layer, and the material of described ultra-low K dielectric layer is carbonado (BlackDiamond, BD) etc.
After metal level 102 is formed barrier layer 103, dielectric layer 104 successively, scanography is carried out to the surface of dielectric layer 104, can find that the quantity of small embossment greatly reduces.
It should be noted that, above-described embodiment is for BEOL, but the present invention is not restricted to this, in other embodiments, can also be the situations of other operation stages (such as FEOL) when applying CMP, such as, in FEOL, after substrate forms metal-oxide-semiconductor, when forming the metal plug of being drawn each for metal-oxide-semiconductor pole, need to form groove in the interlayer dielectric layer first on metal-oxide-semiconductor, backward groove in fill metal material, unnecessary interlayer dielectric layer and metal material is removed afterwards by CMP, by infrared source, interlayer dielectric layer and metal surface are heat-treated after CMP, the chemical solution evaporation that CMP can be made residual, make organic substance decomposing, thus the probability that convexes to form can be reduced, improve yield.
It should be noted that, in above-described embodiment, described infrared source is for ultraviolet source, but the present invention is not restricted to this, can also be visible light source (industrial powerful mercury lamp) or infrared light light source (industrial powerful quartzy infrared lamp), can also be that other can the object of radiations heat energy, described infrared source is adopted to heat-treat the film surface after CMP, described film surface temperature is raised, chemical solution can be made to evaporate, make organic substance decomposing, thus reduce the pollutant of film surface, reduce the probability depositing the small embossment that other materials is formed on the membrane, and then improve yield.
In addition, infrared source is without the need to contacting with film surface, thus preventing pollution or damage described film surface, further improve yield.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (7)
1. a manufacture method for semiconductor device, is characterized in that, comprising:
Substrate is provided, substrate forms film;
Unnecessary thin-film material is removed by using the chemical mechanical milling tech of polishing fluid;
Infrared source is adopted to heat-treat film surface, make the temperature of described film surface in the scope of 350 ~ 400 DEG C by thermal radiation, chemical solution during the polishing fluid of film surface is remained evaporation and organic substance decomposing during polishing fluid is remained is carbon dioxide and water; Wherein:
Described infrared source is visible light source, and described employing infrared source comprises the step that film surface is heat-treated: adopt described visible light source to irradiate to heat-treat to film surface;
Or described infrared source is infrared light light source, described employing infrared source comprises the step that film surface is heat-treated: adopt described infrared light light source to irradiate to heat-treat to film surface.
2. the manufacture method of semiconductor device as claimed in claim 1, it is characterized in that, described employing infrared source comprises the step that film surface is heat-treated: heat-treat film surface under the vacuum environment of 0.1 ~ 0.5torr.
3. the manufacture method of semiconductor device as claimed in claim 1, it is characterized in that, described film is metal level.
4. the manufacture method of semiconductor device as claimed in claim 3, is characterized in that, is also included in after heat-treating layer on surface of metal, forms barrier layer, dielectric layer successively on the metal layer.
5. the manufacture method of semiconductor device as claimed in claim 4, it is characterized in that, the material of described metal level is copper.
6. the manufacture method of semiconductor device as claimed in claim 5, is characterized in that, the material on described barrier layer is one or more in the carborundum of nitrating, silicon nitride.
7. the manufacture method of semiconductor device as claimed in claim 6, it is characterized in that, the material of described dielectric layer is SiO
2, one or more in SiOF, SiCOH, SiO, SiCO, SiCON.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110294756.8A CN103035565B (en) | 2011-09-29 | 2011-09-29 | Method for producing semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110294756.8A CN103035565B (en) | 2011-09-29 | 2011-09-29 | Method for producing semiconductor device |
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| CN103035565A CN103035565A (en) | 2013-04-10 |
| CN103035565B true CN103035565B (en) | 2015-07-08 |
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| CN201110294756.8A Active CN103035565B (en) | 2011-09-29 | 2011-09-29 | Method for producing semiconductor device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943528B (en) * | 2014-03-24 | 2016-09-28 | 上海华力微电子有限公司 | Monitored off-line method for NDC thin film |
| CN111081539A (en) * | 2019-12-09 | 2020-04-28 | 上海华力微电子有限公司 | Method for forming semiconductor device |
| CN114664732B (en) * | 2022-05-25 | 2022-09-16 | 合肥晶合集成电路股份有限公司 | Semiconductor integrated device and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1263636A (en) * | 1998-02-13 | 2000-08-16 | 精工爱普生株式会社 | Method for producing semiconductor device and heat treating apparatus |
| CN1719584A (en) * | 2004-07-09 | 2006-01-11 | 精工爱普生株式会社 | Method for manufacturing thin film transistor, electro-optical device and electronic apparatus |
| CN101123215A (en) * | 2006-08-11 | 2008-02-13 | 联华电子股份有限公司 | Copper enchasing technology |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1263636A (en) * | 1998-02-13 | 2000-08-16 | 精工爱普生株式会社 | Method for producing semiconductor device and heat treating apparatus |
| CN1719584A (en) * | 2004-07-09 | 2006-01-11 | 精工爱普生株式会社 | Method for manufacturing thin film transistor, electro-optical device and electronic apparatus |
| CN101123215A (en) * | 2006-08-11 | 2008-02-13 | 联华电子股份有限公司 | Copper enchasing technology |
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| CN103035565A (en) | 2013-04-10 |
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