CN103033839B - Photodetector with improved quantum efficiency - Google Patents
Photodetector with improved quantum efficiency Download PDFInfo
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- CN103033839B CN103033839B CN201210377179.3A CN201210377179A CN103033839B CN 103033839 B CN103033839 B CN 103033839B CN 201210377179 A CN201210377179 A CN 201210377179A CN 103033839 B CN103033839 B CN 103033839B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
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Abstract
The present invention is entitled " photodetector with improved quantum efficiency ".The method that context of methods is related to the radiation detector module for the quantum efficiency that band is improved and assembles the radiation detector module.Module includes scintillator substrate and the photodetector assembled on scintillator substrate.Photodetector includes anode, active organic element and negative electrode.Module also includes being deployed in the pixel element array on photodetector.During being imaged, pixel element array can be propagated through and by the multilayer by photodetector by the radiation for the object attenuation that will be imaged, to be absorbed by scintillator, scintillator launches light quantum as response.Photodetector can absorb photon and generates electric charge with improved quantum efficiency, because photon may not be obscured by the cathode or other layers of the module.Further, module can include reflecting material in the cathode and at pixel element array, and light quantum is oriented into active organic element.
Description
Background technology
In the imaging system based on x-ray, x-ray source is to the patient that will be such as imaged or the person under inspection of luggage or right
As typically launching radiation (that is, x-ray).Hereinafter, term " person under inspection " and " object " convertibly can use to retouch
State the anything that can be imaged.By the typical Ground shock waves of x-ray beam after person under inspection or object attenuation detector radiation
On the array of detecting element, it responds the radiation generation readable signal of impact.Reach the intensity of radiation beam of detector typically
It is determined by the decay and absorption of the person under inspection of scanning or the x-ray of object.In some detectors, scintillator conversion x is penetrated
Beta radiation is the light quantum of the more low energy of collision detector element.Produce and indicated in element after each of detector element
The electric signal of the separation of the radiation, x-ray amount of specific site.These electric signals are collected, digitized and are sent to data processing system
System is for analysis and further processing with reconstruction image.
Because electric signal (its amount based on the light quantum by scintillator launched and generate) of the image based on transmission is rebuild, because
The performance of this detector system by scintillator, the conversion that is radiated light quantum influenceed.Specifically, the quantum effect of detector
Rate, or detector have impact on the light quantum that detector indicates to detect in generation to the sensitivity for the photon launched by scintillator
Accuracy during electric signal.
By convention, the detector based on scintillator is directly filled on the array (for example, tft array) of pixel element
Match somebody with somebody.For example, the layer of detector can deposit (for example, spin coating, spraying etc.) on tft array, and metallic cathode can use incoming call
Detector is connected to scintillator.However, configuration as a result, photodetector can have drop due to the photonic absorption of negative electrode
Low quantum efficiency (for example, having dropped about 20%).Such reduction can cause in radiation detection in detector photo-quantum efficiency
Deficient efficiency in device system and/or the inaccuracy in the image of reconstruction.
The content of the invention
There is provided radiation detector module in one embodiment.Radiation detector module includes tft array, is deployed in
Photodetector under tft array and the scintillator substrate being deployed under photodetector.Photodetector includes deployment
Negative electrode, the active organic element being deployed under negative electrode and the sun being deployed under active organic element under tft array
Pole.Scintillator substrate is configured to absorb radiation, and photodetector is configured to respond to absorbed radiation-emitting light quantum.Light
Electric explorer is configured to absorb the light quantum generation electric charge that the light quantum launched by scintillator and response are absorbed.
Another embodiment is related to the method for manufacture radiation detector.Method includes forming scintillator substrate, flashed
Device substrate deployment anode, form on anode active organic element, form on active organic element negative electrode and
The array of pixel element is physically combined to negative electrode.
There is provided radiation detector and imaging system In yet another embodiment.Radiation detector and imaging system include
Detector module, it includes being configured to absorption by the radiation for the object attenuation that will be imaged and responds absorbed radiation-emitting light
The scintillator substrate of quantum.Radiation impacts scintillator by pixel element array and photodetector.Photodetector is disposed
The light quantum that the light quantum launched by scintillator and response absorbed, which is absorbed, in scintillator substrate and being configured to generates electricity
Lotus.Pixel element array, which physically combines and is electrically coupled to photodetector and is configured to produce, to be corresponded to by photodetector
The electronic signal of the electric charge of generation.Radiation detector and imaging system also include control circuit, and it is configured to processing by pixel elements
The electronic signal that pixel array is produced, to rebuild the image for the object that will be imaged.
Brief description of the drawings
These and other features, aspect and the advantage of the present invention will more be held when refer to the attached drawing is read and is described in detail below
Change places and be understood, represent similar component through accompanying drawing similar reference numerals, in the accompanying drawings：
Fig. 1 depicts the photoelectric sensor system of one embodiment according to the disclosure, it include photodetector and with
Its associated control circuit for obtaining view data；
Fig. 2 depicts traditional photodetector configuration；
Fig. 3 depicts assembling according to the one embodiment, photodetector being deployed on scintillator of the disclosure
First step；
Fig. 4 depicts assembling according to the one embodiment, photodetector being deployed on scintillator of the disclosure
Second step；
Fig. 5 depicts one embodiment, photodetector being deployed on scintillator the side according to the disclosure
Figure, its mounting technology illustrated according to Fig. 3 and Fig. 4；And
Fig. 6 depicts the pixel elements primitive matrix according to the one embodiment of the disclosure, Fig. 5 photodetector module illustrated
The top view of the part of row.
Embodiment
The implementation of the disclosure is related to radiation detector and the imaging system with x-ray source, and x-ray source is to person under inspection or right
As or the anything that can be imaged launch radiation.X-ray beam impacts photodetection after by person under inspection or object attenuation
Device, this produces the signal for indicating x-ray radiation at the specific site of element.Signal is collected, digitizes and is sent to number
According to processing system, handled for analysis with further to produce image.
Fig. 1 depicts one embodiment of the radiation detector system of FIGURE 10 for using in imaging systems.When in X-ray
During the context interpretation system 10 of detection, in certain embodiments, system 10 can be adapted to the electromagnetic signal (example for detecting other forms
Such as, it is seen that light).In the embodiment of description, radiation detector system of FIGURE 10 includes photodetector module 12 and control and handled
Circuit 14.During being imaged, from imaging source enter radiation 16 (for example, X-ray) by experience imaging middle person under inspection or
Photodetector module 12 is impacted after object attenuation.As that will be discussed in more detail, photodetector module 12 can include member
Part (for example, scintillator), it absorbs 16 (for example, x-ray photons) of radiation and the light as response emission characteristics wavelength, so that
The absorbed energy of release.The energy (that is, the light of transmitting) absorbed can by photodetector module 12 other elements (example
Such as, organic photodiode) detection, with the electric signal for the radiation 16 for generating correspondence incidence.
The electric signal generated by photodetector module 12 is next by controlling the reading circuit 18 with process circuit 14 to obtain
.Signal from reading circuit 18 is obtained by data acquisition circuit 20.In the embodiment depicted, the signal supply of acquisition
To data processing circuit 22 and/or image processing circuit 24.When there is data processing circuit 22, its executable a variety of function example
Such as gain calibration, edge detection, sharpening, contrast enhancing, so that data are suitable to subsequent processing or image reconstruction.Image
Next process circuit or image processor 24 can handle the signal of acquisition, to generate the area-of-interest passed through by radiation 16
(ROI) image.In the embodiment depicted, control and process circuit 14 can be controlled or are implemented within by computer 16,
Computer may include operator workstation and/or image display workstation or communicate with.For example, operator workstation can be by being
System operator utilize provide control instruction to help image generate component some or all.Operator workstation also can be
The image of long-range position display generation, such as on the image display workstation of separation.
Although in the illustrated embodiment, control and process circuit 14 are depicted in the outside of photodetector module 12,
But in some implementations, some or all of these circuits can provide the part as photodetector assembly 12.Similarly,
In certain embodiments, some or all of the circuit occurred in control and process circuit 14 can be provided as computer 26
In part, such as imaging workstation that may be embodied in operator workstation.Therefore, in certain embodiments, reading circuit 18, number
According to Acquisition Circuit 20, data processing circuit 22, image processing circuit 24 aspect, and control and process circuit 14 other electricity
Road, it is possible to provide as photodetector module 12 part and/or connection computer 26 part.
Fig. 2 provides the diagram that traditional photodetector is configured.Photodetector is typically in pixel element array 34
On assemble, also referred to as thin film transistor (TFT) (TFT) array, photodetector is deployed on substrate 32.Photodetector 35
Typically directly assembled on imaging tft array 34.Photodetector 35, also referred to as photodiode or organic photoelectric
Diode (OPD), it may include anode 36, negative electrode 40 and the organic film 38 between anode 36 and negative electrode 40, it responds light absorbs
Produce electric charge carrier.Scintillator 42 can be deployed on the negative electrode 40 of photodetector 35, and top cover 44 can cover flicker
Device 42.
Illustrated in Fig. 2 and photodetector is used during being imaged, radiation 16 can impact photodetector and pass through top cover
44 are absorbed by scintillator 42.Scintillator 42 can generate photon, the light quantum that for example responsive radiation 16 absorbs.The light of scintillator generation
Son may pass through negative electrode 40, be absorbed by the organic film 38 of photodetector 35, and the optical wavelength photon that the response of organic film 38 absorbs is produced
Electric charge carrier.The electric charge produced by photodetector 35 is stored by tft array 34 and transmitted (for example, by reading circuit 18
To control and process circuit 14) it is used to further handle and image reconstruction.
In typical photodetector, such as illustrating in fig. 2, the absorption of the photon generated by scintillator 42
It can be hindered by the negative electrode 40 of photodetector 35.Because negative electrode 40 is containing metal and opaque as usual, by scintillator
A part for the photon of 42 generations can be absorbed by negative electrode 40 or block and can not reach enlivening for photodetector 35 forever
Organic layer 38.This may reduce the quantum efficiency (for example, close to 20%) of photodetector 35, because impact photodetector 35
Photon be not that all can produce electron hole pair between negative electrode 40 and anode 36.The quantum efficiency of photodetector is so
Reduction can cause in the deficient efficiency of radiation detector system of FIGURE and/or inaccurate in the image of reconstruction.In addition, because passing
Photodetector 35 is deposited on tft array 34 in the photodetector mounting technology of system, so scintillator 42 must optics
Ground is attached to photodetector and tft array assembly.In such an arrangement, when scintillator 42 to photodetector 35 it
Between transmit photon when, due to combining flaw, photon may also be lost.
One or more embodiments of this method are included in the photodetector 35 assembled on scintillator and assembling so
Photodetector module 12 method.According to this method, the light of the responsive radiation 16 of scintillator 42 generation can not visited by photoelectricity
Survey device 35 negative electrode 40 hinder first in the case of launch and/or reflect towards enlivening organic layer 38.In addition, by directly in flicker
Photodetector is assembled on device 42 (or on the complanation layer being deployed on scintillator 42), is not necessary with reference to step
, and can further reduce photon from scintillator 42 to the transmission of photodetector 35 in deficient efficiency and improve photodetection
The quantum efficiency of device module 12.
Fig. 3 and Fig. 4 are the side views formed in the middle of the period of assembly of photodetector module 12, and Fig. 5 is according to this
The side view of the complete photodetector module 12 of one embodiment of method.Started first with Fig. 3, photodetector module
12 are included in the photodetector 35 manufactured on scintillator 42.Scintillator 42 can by absorb radiation 16 and 17 (its perpendicular to
Any direction impact photodetector module 12 of the plane of photodetector module 12) and conduct response emission characteristics wavelength
Light, formed so as to the material of the energy that discharges absorption.The polytype of scintillator material can be used, and it is by photodetector 35
The form for being transformed into detectable energy, such as optical or other more low energy photons will be radiated.In certain embodiments,
Scintillator material can be deposited on glass or polymer film, for example polycarbonate or PET (polyethylene terephthalate).This
Outside, (such as it is typical case in traditional manufacture method because scintillator is not deposited on the organic material of photodetector 35
As), a variety of scintillator materials that may otherwise destroy photodetector 35 are available in certain embodiments.Such flicker
Equipment material has higher efficiency than traditional scintillator material, and may include such as sintering or sputtering sedimentation ceramics or burn
Knot or sputtering sedimentation glass, and particle bonding scintillator.
Reflector 46 can be formed on one side of scintillator 42.In certain embodiments, reflector 46 may include to be adapted to
The reflecting material of the photon generated in reflection by scintillator 42, it is equally suitably adapted for as scintillator 42 and/or photodetector
Barrier protection is provided in other layer of relatively blunt environment reaction thing of module 12 (for example, vapor, oxygen etc.).In some realities
Apply in example, reflector 46 can be substantial uniform layer, it has low absorption and there can be scope at about 0.1 millimeter to 1
The thickness of millimeter.One example of suitable reflector 46 may include the carbon graphite layer with reflective aluminum backing.
Complanation layer 48 can be deposited on that heel-tap reflex device 46 is opposite, on another surface of scintillator 42.In some realities
Apply in example, complanation layer 48 can cover inhomogeneities or roughness in scintillator 42.Suitable complanation layer 48 can cover the flaw
Defect (for example, inhomogeneities or roughness) without flaw so that have the peak value higher than the thickness 2/3 of complanation layer 48 (for example, high
Degree is on the surface of complanation layer 48).For example, typical complanation layer 48 is smaller than about 10 microns, and by planarizing
The flaw of the covering of layer 48 is highly smaller than about 20/3 micron.In certain embodiments, complanation layer 48 generally can be
It is bright and can will not significantly affect light between the scintillator 42 being deployed on complanation layer 48 and photodetector 35
Resolution ratio and transmission.Complanation layer 48 may include the material of relative low density (for example, polyimides), and it will not significantly shadow
Ring the intensity of the radiation 16 by complanation layer 48 to scintillator 42.Further, in certain embodiments, complanation layer 48 can
It is not essential, and photodetector 35 can be directly deployed on scintillator 42.
The formation photodetector 35 on complanation layer 48 or directly on scintillator 42, anode 36 can use non-pattern
The deposition technique (for example, spin coating, spraying etc.) of change is deposited first.Anode can adulterate thin metal oxide film, such as SnO2、
ZnO2, tin indium oxide, or can be include for example silver, gold or aluminium metal film.In certain embodiments, anode 36 can be with
It is any suitable nesa coating, its light transmission with about 90% or higher and about 100 ohms per squares or higher
Electric conductivity.
26. active organic layer 38 uses such as solution processing, physical vapour deposition (PVD), spin coating or liquid coating technology, it can sink
Product is on anode 36.Active organic layer 38 can include the absorption with light (for example, photon that scintillator 42 discharges) at two
One or more organic materials of electric charge carrier are produced between electrode (for example, anode 36 and negative electrode 40).Typically, electric charge point
Realized from by two kinds of materials arranged side by side, so that the most stable state of electronics (charge carriers, electronics acceptor) is on a kind of material,
And the most stable state (positive carrier, electron donor) in hole is on another.One of such material pair
Example is 3,4,9,10- perylene tetracarboxylic bisbenzimidazoles (PTCBI, electronics acceptor), and copper phthalocyanine (CuPc, electronics
Alms giver).Another possible material is to including poly- (2- methoxyl groups -5- (3 ', 7 ' dimethyl-octa epoxide) 1,4, phenylene vinylene
Support, (MDMO-PPV) and (6,6) phenyl-C61- methyl butyrates (PCBM).In addition, it is possible to use include machine composition (such as poly-
Phenylene vinylene derivative) and both inorganic nanocrystal materials (such as CdSe or ZnTe) mixed structure.It is such to receive
Rice crystalline material can have the change of size and shape, from about 2 nanosphere bodies to the rod of the micron dimension size of high aspect ratio,
Or even possess multiple high aspect ratios (aspect) rod for being connected to single core.Electron donor and acceptor's material can or from
Deposition is deposited or mixed in scattered hierarchy.
Active organic layer 38 may include sublayer, such as electronics or hole blocking layer, electronics or hole transmission layer etc., its suction
Receive photon and electric charge is transmitted by active organic layer 38.Can be from several nanometers to a few micrometers changes on each molecular layers thick.Organic layer
Typical thickness is at 10 nanometers to 100 rans.Multilayer solution processing equipment can be by using will not be dissolved in the molten of cutting optimal
The continuous application of the material of agent is formed.For example, poly- (3,4-secondary ethylenedioxy thiophene (ethylenedioxythiophene))：It is poly-
(styrene sulfonic acid) (PDOT：PSS it) will not be dissolved in many organic solvents, and can be for the suitable of solution processing equipment
The first layer of conjunction, followed by the mixing of (MDMO-PPV and the PCBM) of the organic solvent deposition from such as Benzene Chloride.Multilayer is organic
Structure can also be formed by continuous thin organic film physical vapour deposition (PVD), continuous thin organic film can comprising it is one or more into
Fractionated molecule.In the case of the non-crystalline silicon based on photodiode, the overall thickness of organic layer is adjustable integrated to obtain electric charge
The expectation part (fraction) of signal.
Negative electrode 40 can be formed enlivening on organic layer 38.Negative electrode 40 can be thin metal level, and it is opaque and anti-
Penetrate, so that any unabsorbed light from scintillator 42 can be reflected back active organic layer 38, therefore improve photodetection
The quantum efficiency of device 35.In certain embodiments, such as Ca, LiF, CsF, ITO, FTO or any are transparent and conductive partly leads
The material of body etc. may be added to negative electrode 40, to improve the series connection contact resistance that negative electrode 40 arrives photodetector 35.
In certain embodiments, negative electrode available physical is vapor-deposited or prepared by splash coating technology, and in deposition
Or contact-mat array 35 can be defined using shadow mask (shadow mask) during sputtering.Engagement pad 41 in certain embodiments may be used
To be rectangle, although in other embodiments, engagement pad 41 can be suitable for providing between negative electrode 40 and tft array 34
Any shape of electrical contact.Engagement pad 41 can substantially equally be separated above the plane of negative electrode 40, with photodetector mould
The pixel alignment of block 12.In certain embodiments, the engagement pad 41 of negative electrode 40 can be about 10-15 microns wide and can have big
In the size of engagement pad 41 spacing (for example, between engagement pad 41 corresponding to the pixel of photodetector module 12
Every).For example, if engagement pad 41 is 10-15 microns, the spacing between engagement pad 41 can be about 20 microns or bigger.
In certain embodiments, pel spacing can be about 200 microns.
Once photodetector 35 is deployed on scintillator 42, photodetector 35 can be coupled with tft array 34.Fig. 4
It is the side view formed in the assembling of photodetector module 12 in the middle of another, it is coupled to TFT in photodetector 35
Before array 34.In certain embodiments, tft array 34 may include the tft array in glass or low density plastics' substrate, lining
Bottom has the thickness from one to several millimeters on thickness.In addition, in certain embodiments, tft array 34 can be patterned to tool
There is the contact 54 that can be alignd with the engagement pad 41 of photodetector 35, so as to be obtained between tft array 34 and photodetector 35
Obtain and preferably electrically connect.Tft array 34 in certain embodiments can the thinner radiation to reduce impact photodetector module 12
14 absorption, and in certain embodiments, tft array 34 can be flexibly with other spirits with photodetector module 12
Layer living is compatible.The arrangement of TFT in tft array 34 may correspond to the engagement pad 41 and/or pixel of photodetector 35.Such as
It is used herein, the pixel of photodetector module 12 may include negative electrode 40 engagement pad 41 and corresponding pel spacing (for example,
The distance between adjacent engagement pad 41), it includes anode 36, negative electrode 40 and the part for enlivening organic layer 38 between them.
Pixel may also comprise the TFT of tft array 34, and it aligns with engagement pad 41.
Adhesive layer 50 can be deployed on tft array 34, and photodetector 35 is arrived physically to combine tft array 34.
In some embodiments, adhesive layer 50 can be deployed on negative electrode 40 as replacement, and TFT is arrived physically to combine photodetector 35
Array 34.Adhesive layer 50 may include any suitable bonding and conductive material.For example, layer 50 may include anisotropic conductive cream or
Film (ACP or ACF), adhesive tape, acryloid cement or hot activation glue.Adhesive layer 50 can be tft array 34 and photodetection
Device 35 is laminated together, and in certain embodiments, heat and/or pressure can be against tft array 34 and/or photodetectors 35
Apply, so that tft array 34 and photodetector 35 is laminated together.
In addition, adhesive layer 50 can be conductive in z directions (for example, perpendicular to plane of tft array 34) and in x directions or
Y directions (for example, in face of tft array 34) are without significantly conductive.Due to adhesive layer 50 be only in z directions it is conductive,
The electric charge formed in the pixel of photodetector 35, can be via engagement pad in the case of the not short-circuit pixel of photodetector module 12
41 are sent to the corresponding TFT in tft array 34.Electric wire 52 in adhesive layer 50 represents conductive path (for example, TFT source electrode
Line or drain line etc.), it is suitably adapted for the electric charge being transmitted between photodetector 35 and tft array 34.
Fig. 5 illustrates the side view of complete photodetector module 12.During being imaged, the radiation 16 from imaging source
17 by be subjected to imaging medium object or person under inspection decay after impact photodetector module 12.It is noted that in different realities
Apply in example, radiation can be from any direction impact perpendicular to the plane of photodetector module 12.For example, radiation 16 can pass through
Impacted in the direction of tft array 34, or in certain embodiments, radiation 17 can be impacted in the direction by reflector 46.Spoke
Penetrate 16 or 17 layers that may pass through photodetector module 12 (including tft array 34, adhesive layer 50, negative electrode 40, active organic layer
38th, anode and complanation layer 48) arrive scintillator 42.The wavelength of radiation 16 or 17 can be short enough, with no notable in intensity
Pass through these layers in the case of loss.
The absorbable radiation 16 or 17 of scintillator 42 and the release absorption in the form of light quantum or other more energy photons
Energy.As indicated by arrow 56, the light quantum launched by scintillator 42 may pass through complanation layer 48 and anode 36, complanation layer
48 and anode 36 be usually each transparent (for example, light quantum transmission more than 90%), with the activity of photodetector 35
Organic layer 38 is absorbed.As indicated by arrow 58, it is not that the direct light quantum launched towards active organic layer 38 can be by reflector
Reflect to improve the photon percentage through scintillator 42 and towards photodetector 35.In addition, through active organic layer 38
Light quantum can be reflected by the reflector space of negative electrode 40, as indicated by arrow 60, therefore be further increasing and sent out by scintillator
The percentage that the light quantum penetrated is absorbed by active organic layer 38, and improve the quantum efficiency of photodetector module 12.
Once active organic layer 38 absorbs light quantum, organic material can produce electric charge carrier, and separation of charge can
Occur between positive electrode (such as negative electrode 40) and negative electrode (such as anode 36).The electric charge generated in 35 layers of photodetector
Can be via the corresponding contact pad 41 of negative electrode 40 from each middle transmission of the pixel of photodetector 35.Electric charge may pass through adhesive layer 50
(its can z directions conductive) and to the corresponding TFT of tft array 34.Electric charge can be digitized by tft array 34 and be sent to control and
Process circuit (for example, by the reading circuit 18 in Fig. 1 and arriving control and process circuit 14), for further handling and sweeping
The reconstruction for the image retouched.
Fig. 6 corresponds to the top view of the part 72 of the tft array 34 of a pixel of photodetector module 12.As institute
Discuss, the pixel portion 72 of photodetector module 12 may include the engagement pad 41 and anode 36 of negative electrode 40, negative electrode 40 and
The part of active organic layer 38 in the middle of it, and the tft array 34 alignd with engagement pad 41 TFT.From illustrated in Fig. 6
In the top view of the pixel portion 72 of tft array 34, engagement pad 54 can be it is visible, and TFT 62 component, such as grid
Pole, source electrode line 64 and drain line 66 can be embedded under passivation layer 70, passivation layer 70 prevent TFT62 from environment components and/or with light
Electric explorer 35 reacts.Passivation layer 70 can be formed by 68 passivation passages.Engagement pad 54 may be produced that any size, and one
In a little embodiments, the prescribed level of engagement pad 54 is about a pel spacing, transmittable from photodetection by it to improve
The contact area of the electric charge of the corresponding engagement pad 41 of device 35.In certain embodiments, face of the engagement pad 54 relative to tft array 34
Long-pending big bonded area can reduce alignment error and improve alignment tolerances, therefore improve every layer and in photodetector module 12
Connection between the component of pixel.
This written description uses examples to disclose the present invention including optimal mode, and also enables those skilled in the art real
The present invention is trampled, including makes and use any equipment or system and the method for performing any combination.The present invention is patentable
Scope is defined by the claims, and may include the other examples that those skilled in the art expect.If such other examples have
From claim literal language without different structural elements, or if they are included with claim literal language without substantially not
With equivalent structural elements, then they be defined as within the scope of claim.
Claims (23)
1. a kind of radiation detector module, comprising：
Thin film transistor (TFT) (TFT) array；
It is deployed in the thin film transistor (TFT)（TFT）Photodetector under array, the photodetector is included：
It is deployed in the thin film transistor (TFT)（TFT）Negative electrode under array；
It is deployed in the active organic element under the negative electrode；And
It is deployed in the anode under the active organic element；Wherein described negative electrode is in the one side towards the active organic element
It is reflection, and the reflecting surface of wherein described negative electrode is configured to the light quantum generated by scintillator being reflected back the activity and had
Machine element；
The scintillator substrate under the photodetector is deployed in, wherein the scintillator substrate absorbs brilliant by the film
Body pipe（TFT）The radiation of array and the photodetector, and absorbed radiation-emitting light quantum is responded, and it is wherein described
Photodetector absorbs the light quantum launched by the scintillator and responds absorbed light quantum generation electric charge.
2. radiation detector module as claimed in claim 1, wherein the thin film transistor (TFT)（TFT）Array includes transistor
Array, each transistor is configured to receive the electric charge generated by the photodetector.
3. radiation detector module as claimed in claim 2, wherein each transistor correspondence in the array of the transistor
In the pixel of the photodetector.
4. radiation detector module as claimed in claim 2, wherein the array of the transistor includes thin film transistor (TFT) (TFT)
Array.
5. radiation detector module as claimed in claim 1, comprising adhesive layer, wherein the thin film transistor (TFT)（TFT）Array
The photodetector is physically attached to by described adhesive layer.
6. radiation detector module as claimed in claim 5, wherein the adhesive layer is anisotropic conductive cream, anisotropy
One or more of conducting film and conductive strips.
7. radiation detector module as claimed in claim 5, wherein the adhesive layer is generally brilliant perpendicular to the film
Body pipe（TFT）It is conductive in the z directions of the plane of array, and without significantly conductive in x directions or y directions.
8. radiation detector module as claimed in claim 1, wherein the negative electrode includes the array of cathode contact pad, and its
In each cathode contact pad correspond to a pixel of the radiation detector module.
9. radiation detector module as claimed in claim 1, wherein the anode arrangement is impacted into transmission from the scintillator
90% or more of the light quantum of the anode.
10. radiation detector module as claimed in claim 1, wherein the scintillator comprising sintering or sputtering sedimentation ceramics,
One or more of or sintering or sputtering sedimentation glass.
11. radiation detector module as claimed in claim 1, wherein the scintillator binds scintillator comprising particle.
12. radiation detector module as claimed in claim 1, comprising be deployed in the scintillator and the photodetector it
Between complanation layer, wherein the complanation layer is generally transparent.
13. radiation detector module as claimed in claim 1, comprising reflector, it is configured to reflection by the scintillator court
The light quantum for the photodetector transmitting being deployed on the scintillator.
14. a kind of method for manufacturing radiation detector, methods described is included：
Form scintillator substrate；
In the scintillator substrate deposition anode；
Active organic element is formed on the anode；
Negative electrode is formed on the active organic element；And
Physically with reference to pixel element array to the negative electrode；
Wherein described negative electrode the one side towards the active organic element be reflection, and wherein described negative electrode reflecting surface
It is configured to the light quantum generated by the scintillator being reflected back the active organic element.
15. method as claimed in claim 14, is included using non-wherein depositing the anode in the scintillator substrate
The deposition technique of patterning.
16. method as claimed in claim 14, solution is used wherein forming active organic element on the anode and including
Handle, pass through one or more of physical vapour deposition (PVD), spin coating or liquid coating technology.
17. method as claimed in claim 14, is used wherein forming the negative electrode on the active organic element and including
Physical vapour deposition (PVD) passes through splash coating technology.
18. method as claimed in claim 14, wherein forming the negative electrode on the active organic element included in institute
State cathode material deposition or sputtering during using cover to form the array of cathode contact pad.
19. method as claimed in claim 18, engagement pad is formed on the array of the pixel element, wherein configuring institute
Each of engagement pad is stated to contact one in the cathode contact pad.
20. method as claimed in claim 14, wherein physically being included with reference to the array of the pixel element to the negative electrode
Deposit adherent material between the negative electrode and the array of the pixel element.
21. method as claimed in claim 20, wherein physically being included with reference to the array of the pixel element to the negative electrode
Using one or more of heat and pressure, to be laminated the array and the negative electrode of the pixel element.
22. a kind of radiation detector and imaging system, comprising：
Detector module, it is included：
Scintillator substrate, it is configured to absorb by the radiation for the object attenuation that will be imaged, wherein the radiation passes through pixel elements
Pixel array and photodetector, and wherein described scintillator substrate are further configured to respond to absorbed radiation-emitting light
Quantum；
The photodetector of the scintillator substrate is deployed in, the photodetector includes transparent and conductive sun
Pole, the negative electrode of reflection and the active organic element being deployed between the anode and the negative electrode；Wherein described negative electrode towards
The one side of the active organic element is to reflect, and the reflecting surface of wherein described negative electrode is configured to be given birth to by the scintillator
Into light quantum be reflected back the active organic element；
Wherein described photodetector is configured to absorb the light quantum launched by the scintillator and responds absorbed light
Quantum generates electric charge；And
The pixel element array, its physically with reference to be electrically coupled to the photodetector, wherein the pixel element battle array
Row are configured to produce the electronic signal for corresponding to the electric charge generated by the photodetector；
Circuit, it is configured to the electronic signal that processing is produced by the pixel element array, described will be imaged with rebuilding
Object image.
23. radiation detector as claimed in claim 22 and imaging system, include the display for being configured to show described image.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/250,568 US8581254B2 (en) | 2011-09-30 | 2011-09-30 | Photodetector having improved quantum efficiency |
| US13/250568 | 2011-09-30 |
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| Publication Number | Publication Date |
|---|---|
| CN103033839A CN103033839A (en) | 2013-04-10 |
| CN103033839B true CN103033839B (en) | 2017-10-13 |
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| Country | Link |
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| US (1) | US8581254B2 (en) |
| CN (1) | CN103033839B (en) |
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| CN103033839A (en) | 2013-04-10 |
| US20130082264A1 (en) | 2013-04-04 |
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