CN103033268B - For the semiconductor package part of pyroelectric infrared sensor and manufacture method thereof and sensor - Google Patents
For the semiconductor package part of pyroelectric infrared sensor and manufacture method thereof and sensor Download PDFInfo
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- CN103033268B CN103033268B CN201110297563.8A CN201110297563A CN103033268B CN 103033268 B CN103033268 B CN 103033268B CN 201110297563 A CN201110297563 A CN 201110297563A CN 103033268 B CN103033268 B CN 103033268B
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Abstract
A kind of semiconductor package part for pyroelectric infrared sensor and manufacture method thereof and sensor.This semiconductor package part comprises conductive metal foil, field effect transistor nude film or operational amplifier nude film, plastic packaging housing and the support for supporting sensitive element.Field effect transistor nude film or amplifier nude film are pasted onto on conductive metal foil, and are electrically connected with it; Plastic packaging housing is for encapsulating conductive metal foil and nude film.Plastic packaging housing exposes partially conductive metal forming, and the part of exposure is for realizing the electrical connection of conductive metal foil and sensitive element and base pin.The present invention adopts semiconductor packaging process that field effect transistor nude film or amplifier die package are become structure and the shape of the substrate required for pyroelectric infrared sensor, this encapsulating structure part has the electrical connection function of the substrate of existing pyroelectric infrared sensor concurrently, the supporting functions of support and the enlarging function of amplifier element, thus simplify sensor internal structure, improve reliability, reduce cost.
Description
Technical field
The present invention relates to pyroelectric infrared sensor technology.
Background technology
Pyroelectric infrared sensor is a kind of detector infrared radiation signal being changed into electric signal.As shown in Figure 1, it comprises base 91, substrate 92, amplifier element 93, sensitive element 94 and pipe cap 95 to the structure of existing a kind of pyroelectric infrared sensor.Base 91 is metal material, and base 91 is provided with three through holes, and three base pins 96a, 96b and 96c are each passed through this three through holes, wherein a pin 96c ground connection, and this pin 96c is electrically connected with base 91; Other two pins 96a, 96b and base 91 keep insulating.Substrate 92 is arranged on base 91, and the upper surface of substrate 92 is provided with groove for accommodating amplifier element 93 and P.e.c., and this P.e.c. has the pad be electrically connected with the two ends of amplifier element 93, sensitive element 94 and base pin 96a, 96b, 96c.Pair of brackets 97,98 is also provided with at the upper surface of substrate 92, the side of this pair of brackets 97,98 is provided with conductive layer, sensitive element 94 is arranged in this pair of brackets 97,98, the two ends of sensitive element 94 are electrically connected with the conductive layer of support 97 and the conductive layer of support 98 respectively, and conductive layer and the conductive layer of support 98 of this support 97 are electrically connected with the P.e.c. of substrate.Pipe cap 95 is provided with infrared fileter window 99.Pipe cap 95 covers on base 91, and is tightly connected with this base 91, substrate 92, amplifier element 93 and sensitive element 94 is covered in the space jointly limited by pipe cap 95 and base 91.
There are some pyroelectric infrared sensors to adopt field effect transistor (FET) as amplifier element 93, also have some pyroelectric infrared sensors to adopt operational amplifier as amplifier element 93.Fig. 2 shows the circuit theory diagrams of the pyroelectric infrared sensor adopting field effect transistor.As shown in the figure, one end of sensitive element 94 is electrically connected with the grid G of field effect transistor, other end ground connection.The drain D of field effect transistor and source S are as the power input of pyroelectric infrared sensor and signal output part.
Fig. 1 and Fig. 2 illustrate only the pyroelectric infrared sensor example of an employing amplifier element, in addition, market also has the pyroelectric infrared sensor of employing two amplifier elements, these two amplifier elements are installed on same substrate, and base is provided with four base pins.At present, no matter be the pyroelectric infrared sensor adopting one or more amplifier element, what its amplifier element all adopted is the element pasted on surface that plastic packaging is good, and amplifier element and substrate are discrete components.Due in manufacture link, there is the manufacture of substrate and installation, amplifier element are installed and the operation such as welding, cause the pyroelectric infrared sensor of this structure to have higher manufacturing cost.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of enclosed inside to have the semiconductor package part for pyroelectric infrared sensor of field effect transistor nude film or operational amplifier nude film and conductive metal foil, to substitute existing discrete amplifier element and the surperficial substrate having printed wire, thus reduce the manufacturing cost of pyroelectric infrared sensor.
Further technical matters to be solved by this invention is to provide a kind of pyroelectric infrared sensor adopting above-mentioned semiconductor package part.
Another technical matters to be solved by this invention is the manufacture method providing a kind of above-mentioned semiconductor package part for pyroelectric infrared sensor.
The invention provides a kind of semiconductor package part for pyroelectric infrared sensor, this pyroelectric infrared sensor comprises sensitive element and base pin; Be characterized in, this semiconductor package part being used for pyroelectric infrared sensor comprises:
Conductive metal foil;
Field effect transistor nude film (die) or operational amplifier nude film, be pasted onto on conductive metal foil, and be electrically connected with this conductive metal foil;
Plastic packaging housing, for encapsulating described conductive metal foil and field effect transistor nude film or operational amplifier nude film; This plastic packaging housing exposes partially conductive metal forming, and the partially conductive metal forming of this exposure is used for realizing being electrically connected with described sensitive element and base pin;
Support, for supporting described sensitive element.
Present invention also offers a kind of pyroelectric infrared sensor, comprise with the pipe cap of infrared fileter window, sensitive element, base and the base pin through this base, pipe cap is located on base, and be tightly connected with this base, its feature is, this pyroelectric infrared sensor also comprises the semiconductor encapsulating structure part be arranged on base, and this semiconductor package part comprises:
Conductive metal foil;
Field effect transistor nude film or operational amplifier nude film, be pasted onto on conductive metal foil, and be electrically connected with this conductive metal foil;
Plastic packaging housing, for encapsulating described conductive metal foil and field effect transistor nude film or operational amplifier nude film; This plastic packaging housing exposes partially conductive metal forming, and the partially conductive metal forming of this exposure is used for realizing being electrically connected with described sensitive element and base pin;
Support, for supporting described sensitive element;
Wherein, sensitive element is arranged on support; The two ends of this sensitive element and base pin are electrically connected with the corresponding conductive metal foil part be exposed respectively.
Present invention also offers a kind of method manufacturing the above-mentioned semiconductor package part for pyroelectric infrared sensor, it comprises the following steps:
Step 1, provides a conductive metal foil, multiple field effect transistor nude film or multiple operational amplifier nude film is pasted onto on this conductive metal foil, and each field effect transistor nude film or operational amplifier nude film are electrically connected with conductive metal foil;
Step 2, by plastic package die plastic packaging multiple field effect transistor nude film or multiple operational amplifier nude film and conductive metal foil, form the plastic packaging housing exposing partially conductive metal forming, form the support for supporting sensitive element, the partially conductive metal forming of this exposure is used for realizing being electrically connected with the sensitive element of pyroelectric infrared sensor and base pin simultaneously;
Step 3, is separated into the single semiconductor package part for pyroelectric infrared sensor, and removes unnecessary rim charge by the conductive metal foil completing encapsulation.
The present invention adopts semiconductor packaging process by field effect transistor nude film (die) or operational amplifier nude film (die) and conductive metal foil plastic packaging in housing, this enclosed inside is utilized to have the semiconductor package part of field effect transistor nude film or operational amplifier nude film and conductive metal foil, substitute existing discrete amplifier element and the surperficial substrate having printed wire, the electrical connection function of the substrate of existing pyroelectric infrared sensor, the supporting functions of support and the enlarging function of amplifier element can be realized simultaneously.While saving substrate element, compared with traditional pyroelectric infrared sensor production technology, also eliminate amplifier element and install and welding technology link, thus significantly reduce the manufacturing cost of infrared sensor.In addition, owing to eliminating the operation of installation, welding amplifier element, therefore the reliability of pyroelectric infrared sensor finished product and yield rate also obtain raising.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing a kind of pyroelectric infrared sensor.
Fig. 2 shows the circuit theory diagrams of the pyroelectric infrared sensor adopting field effect transistor.
Fig. 3 is the structural representation of an embodiment of pyroelectric infrared sensor of the present invention.
Fig. 4 is the inside top schematic diagram of the present invention for a semiconductor package part embodiment of pyroelectric infrared sensor.
Fig. 5 is the A-A cross-sectional schematic of Fig. 4, shows a kind of arrangement of pin pad.
Fig. 6 is the A-A cross-sectional schematic of Fig. 4, shows the another kind of arrangement of pin pad.
Fig. 7 is the B-B cross-sectional schematic of Fig. 4.
Fig. 8 is the inside top schematic diagram of the present invention for another embodiment of semiconductor package part of pyroelectric infrared sensor.
Fig. 9 is the B-B cross-sectional schematic of Fig. 8.
Figure 10 is the inside top schematic diagram of the present invention for another embodiment of semiconductor package part of pyroelectric infrared sensor.
Embodiment
Below in conjunction with accompanying drawing the present invention made and further illustrating.
The semiconductor package part of pyroelectric infrared sensor comprises conductive metal foil, field effect transistor nude film or operational amplifier nude film, plastic packaging housing and the support for the sensitive element that supports this pyroelectric infrared sensor according to an embodiment of the invention.Wherein, conductive metal foil can adopt Copper Foil.Plastic packaging housing can adopt epoxy package.
Field effect transistor nude film or operational amplifier nude film are pasted onto on conductive metal foil, and are electrically connected with conductive metal foil.Plastic packaging housing is for encapsulating conductive metal foil and field effect transistor nude film or operational amplifier nude film, this plastic packaging housing exposes partially conductive metal forming, and the partially conductive metal forming of this exposure is used for realizing being electrically connected with the sensitive element of pyroelectric infrared sensor and base pin.
Fig. 3 is the structural representation of a specific embodiment of pyroelectric infrared sensor of the present invention.As shown in Figure 3, it comprises base 11, semiconductor package part 12, sensitive element 14, the pipe cap 15 with infrared fileter window 19 and three base pins through base 11.These three base pins comprise the first pin 16a, the second pin 16b and the 3rd pin 16c.
Base 11 is metal material, and base 11 is provided with three through holes, and the first pin 16a, the second pin 16b and the 3rd pin 16c are each passed through this three through holes, and wherein the 3rd pin 16c ground connection, is electrically connected with base 11; First pin 16a and the second pin 16b and base 11 keep insulating.
Semiconductor package part 12 comprises the plastic packaging housing 123 of field effect transistor nude film (die) 121, conductive metal foil 122 and encapsulation field effect transistor nude film 121 and conductive metal foil 122.Conductive metal foil 122 is embedded in plastic packaging housing 123, as shown in Figure 4, conductive metal foil 122 comprises a metal forming gate pads 122a, an one metal forming drain pad 122b and metal forming source pad 122c, for the first pin pad 122d be electrically connected with the first pin 16a, for the second pin pad 122e be electrically connected with the second pin 16b, for the 3rd pin pad 122f be electrically connected with the 3rd pin 16c, for the sensitive element first end pad 122g that is electrically connected with one end of sensitive element 14 and the sensitive element second end pad 122h for being electrically connected with the other end of sensitive element.First pin pad 122d, the second pin pad 122e and the 3rd pin pad 122f are respectively equipped with the first lead hole 122d1, the second lead hole 122e1 and the 3rd lead hole 122f1 that pass for the first pin 16a, the second pin 16b and the 3rd pin 16c.The partially conductive metal forming of above-mentioned exposure comprises sensitive element first end pad 122g, sensitive element second end pad 122h, the first pin pad 122d, the second pin pad 122e and the 3rd pin pad 122f.Metal forming gate pads 122a is electrically connected with sensitive element first end pad 122g by the lead-in wire 1221 on conductive metal foil, metal forming drain pad 122b is electrically connected with the first pin pad 122d by the lead-in wire 1222 on conductive metal foil, metal forming source pad 122c is electrically connected with the second pin pad 122e by the lead-in wire 1223 on conductive metal foil, and sensitive element second end pad 122h is electrically connected with the 3rd pin pad 122f by the lead-in wire 1224 on conductive metal foil.
Field effect transistor nude film 121 is pasted onto on conductive metal foil 122.The grid of this field effect transistor nude film draws pad, pad is drawn in drain electrode and source electrode extraction pad is electrically connected with metal forming gate pads 122a, metal forming drain pad 122b and metal forming source pad 122c respectively.In the embodiment illustrated in fig. 4, field effect transistor nude film 121 has the first type surface back side relative with this first type surface with one, and the source electrode of field effect transistor nude film 121 draws pad and drain electrode extraction pad is arranged on first type surface, and grid is drawn pad and arranged on the back side.The back side of field effect transistor nude film 121 is pasted onto on metal forming gate pads 122a by conducting resinl, and grid is drawn pad and to be formed with metal forming gate pads 122a by conducting resinl and be electrically connected.The drain electrode of field effect transistor nude film 121 is drawn pad and is electrically connected with metal forming drain pad 122b by bonding line 1225, and source electrode is drawn pad and is electrically connected with metal forming source pad 122c by bonding line 1226.In another embodiment, also grid can be drawn pad, source electrode draws pad and drain electrode extraction pad is all arranged on the first type surface of field effect transistor nude film 121, now, conductive metal foil 122 arranges a slide holder, the back side of field effect transistor nude film 121 is pasted on this slide holder by insulating gel, and grid draws pad, pad is drawn in drain electrode and source electrode extraction pad is electrically connected with metal forming gate pads 122a, metal forming drain pad 122b and metal forming source pad 122c respectively by bonding line.
With reference to figure 5.Plastic packaging housing 123 be respectively equipped with in the position corresponding with the first pin pad 122d, the second pin pad 122e, the 3rd pin pad 122f exposure first pin pad 122d the first pin pad hole 123d1, expose the second pin pad hole 123e1 of the second pin pad 122e, expose the 3rd pin pad hole (not shown) of the 3rd pin pad 123f.The 3rd pin perforation (not shown) that this plastic packaging housing 123 is also provided with the first pin perforation 123d2 penetrated for the first pin 16a, the second pin perforation 123e2 supplying the second pin 16b to penetrate and penetrates for the 3rd pin.First pin pad hole 123d1, the second pin pad hole 123e1 and the 3rd pin pad hole bore a hole 123e2 and the 3rd pin of 123d2, the second pin of boring a hole with the first pin is respectively bored a hole through connection.The aperture in the first pin pad hole 123d1, the second pin pad hole 123e1 and the 3rd pin pad hole is greater than the aperture of the first pin perforation 123d2, the second pin perforation 123e2 and the perforation of the 3rd pin respectively.First pin pad hole 123d1 is defining step with the first pin 123d2 joining place of boring a hole.Equally, the joining place that bore a hole at bore a hole with the second pin respectively 123e2 and the 3rd pin in the second pin pad hole 123e1 and the 3rd pin pad hole also forms step.The pore size of the first pin perforation 123d2, the second pin perforation 123e2 and the perforation of the 3rd pin is preferably equal with the aperture of the first lead hole 122d1, the second lead hole 122e1 and the 3rd lead hole 122f1 respectively.
Conductive metal foil also can comprise the multiple resistance pad for being electrically connected with outer meeting resistance and the multiple electric capacity pads for being electrically connected with external capacitor; Now, plastic packaging housing is also provided with the multiple resistance conductive hole exposing the plurality of resistance pad correspondingly respectively and the multiple capacitor conductive holes exposing the plurality of electric capacity pad correspondingly respectively.
In one embodiment, above-mentioned multiple resistance pads, multiple electric capacity pad, first pin pad 122d, second pin pad 122e and the 3rd pin pad 122f all protrudes by the direction, side of preformed mode to conductive metal foil 122, in mould envelope technique subsequently, the plurality of resistance pad is made to be exposed to the aperture in corresponding resistance conductive hole respectively, the plurality of electric capacity pad is exposed to the aperture in corresponding capacitor conductive hole respectively, this the first pin pad 122d, second pin pad 122e and the 3rd pin pad 122f is exposed to the aperture in the first pin pad hole respectively, the aperture in the second pin pad hole and the aperture in the 3rd pin pad hole, and be no longer depressed in the inside in hole.In Fig. 6, illustrate only the first pin pad 122d and the second pin pad 122e, as shown in the figure, first pin pad 122d and the second pin pad 122e protrudes to the top of conductive metal foil 122, and the first pin pad 122d and the second pin pad 122e is exposed to the aperture in the first pin pad hole and the aperture in the second pin pad hole respectively.
In the embodiment of Fig. 7, plastic packaging housing 123 is provided with the support for supporting sensitive element 14, and this support is the pair of brackets 1231,1232 of projection at plastic packaging housing 123 upper surface.The first conductive hole 122g3 is provided with near the position of support 1231 side at plastic packaging housing upper surface, the second conductive hole 122h3 is provided with, the upper and lower surface of the first conductive hole 122g3 and all through plastic packaging housing of the second conductive hole 122h3 near the position of support 1232 side at plastic packaging housing upper surface.Sensitive element first end pad 122g and sensitive element second end pad 122h is all upwards bent by stamping forming technique, be respectively formed at exposure in the first conductive hole 122g3 and the vertical vertical portion 122g1 extended and the vertical portion 122h1 exposing also vertically extension in the second conductive hole 122h3, wherein, the vertical portion 122g1 of sensitive element first end pad 122g is close to the side of support 1231, and the end face of this vertical portion 122g1 flushes with the end face of support 1231; And the vertical portion 122h1 of sensitive element second end pad 122h is close to support 1232, the end face of this vertical portion 122h1 flushes with the end face of support 1232, vertical portion 122g1,122h1 are identical with the conductive layer role be arranged in prior art in side face, when sensitive element 14 is arranged in this pair of brackets 1231,1232, the two ends of sensitive element 14 are electrically connected with vertical portion 122g1 and vertical portion 122h1 respectively by conducting resinl.
In another embodiment, as shown in Figure 8 and Figure 9, first conductive hole 1233 and the second conductive hole 1234 are separately positioned on the end face of support 1231 and support 1232, sensitive element first end pad 122g exposes by the first conductive hole 1233, and sensitive element second end pad 122h exposes by the second conductive hole 1234.When sensitive element 14 is electrically connected with sensitive element first end pad 122g, sensitive element second end pad 122h by needs, can in the first conductive hole 1233 and the second conductive hole 1234 filled conductive glue 80, this conducting resinl can be such as scolding tin glue, and the two ends of sensitive element 14 are electrically connected with sensitive element first end pad 122g and sensitive element second end pad 122h respectively by conducting resinl 80.In fig. 8, the shape of the first conductive hole 1233 and the second conductive hole 1234 is circular, and be arranged at the center of support 1231 and support 1232 end face respectively, but, this first conductive hole 1233 and the second conductive hole 1234 also can be other shapes such as square, oval, also can be arranged at the marginal position of cradle top surface.
Figure 10 is the inside top schematic diagram of the present invention for another embodiment of semiconductor package part of pyroelectric infrared sensor.In this embodiment, sensitive element first end pad 122g and sensitive element second end pad 122h is not that the mode by arranging conductive hole is exposed to plastic packaging outside, but is directly exposed at outside plastic packaging housing, and upwards bends.Support is the pair of brackets 1235,1236 of projection on plastic packaging housing 123 upper surface, this pair of brackets 1235,1236 is near the edge of plastic packaging housing, the lateral surface 1235A of the support 1235 and lateral surface 123A of plastic packaging housing is roughly positioned at same plane, and the lateral surface 1236A of the support 1236 and lateral surface 123B of plastic packaging housing is roughly positioned at same plane.The sensitive element first end pad 122g of this bending and sensitive element second end pad 122h is close to lateral surface 1235A, 1236A of this pair of brackets 1235,1236 respectively, and end face flushes with the end face of this pair of brackets 1235,1236 respectively.When sensitive element 14 is arranged in this pair of brackets 1235,1236, the two ends of sensitive element are electrically connected with the sensitive element first end pad of this bending and sensitive element second end pad respectively by conducting resinl.
In another embodiment, support can directly by being exposed to plastic packaging housing 123 outside and for forming with the partially conductive metal forming that sensitive element realizes being electrically connected, now not needing to arrange support on plastic packaging housing.The sensitive element first end pad 122g upwards bent as shown in Figure 10 and sensitive element second end pad 122h, if its top is higher than the surface of plastic packaging housing, can form the support of supporting sensitive element.In order to obtain support effects more stably, sensitive element first end pad 122g can also relative bending further in the horizontal direction with the top of sensitive element second end pad 122h.Sensitive element can be suspended on the support that is made up of sensitive element first end pad 122g and sensitive element second end pad 122h, and the two ends of sensitive element are electrically connected with the sensitive element first end pad of this bending and sensitive element second end pad respectively.
During assembling, semiconductor package part 12 is arranged on base 11.The top of the first pin 16a penetrates the first pin perforation 123d2 and the first lead hole 122d1 successively, and is electrically connected with the first pin pad 122d; The top of the second pin 16b penetrates the second pin perforation 123e2 and the second lead hole 122e1 successively, and is electrically connected with the second pin pad 122e; The top of the 3rd pin 16c penetrates the 3rd pin perforation and the 3rd lead hole 122f1 successively, and is electrically connected with the 3rd pin pad 122f.Sensitive element 14 is arranged in this pair of brackets 1231,1232, and the two ends of sensitive element 14 are electrically connected with sensitive element first end pad and sensitive element second end pad respectively.The pipe cap 15 being provided with infrared fileter window 19 covers on base 11, and is tightly connected with this base 11, sensitive element 14, semiconductor package part 12 is covered in the space jointly limited by pipe cap 15 and base 11.
In another embodiment, plastic packaging housing upper surface offers groove, and the side that this groove two is relative forms support.Sensitive element 14 is placed on the top of groove, and is supported on the relative side of this groove two, thus forms space between sensitive element and the bottom surface of groove.First conductive hole 1233 and the second conductive hole are separately positioned on the plastic packaging surface of shell on the limit, two opposite sides of groove, and expose sensitive element first end pad 122g and sensitive element second end pad 122h respectively.The two ends of sensitive element 14 are electrically connected with sensitive element first end pad 122g and sensitive element second end pad 122h respectively by conducting resinl, and this conducting resinl such as can adopt scolding tin glue.
In the above-described embodiment, be illustrate with single sensitive element and monolithic field effect transistor nude film, the present invention is also applicable to single sensitive element and single operational amplifier nude film and arranges the situation of two or more sensitive element and more than two pieces field effect transistor nude films or operational amplifier nude film.To arrange the situation of two sensitive elements and two pieces of field effect transistor nude films or operational amplifier nude film, these two pieces of field effect transistor nude films or operational amplifier nude film are all pasted onto on conductive metal foil 122, and are electrically connected with this conductive metal foil.Plastic packaging housing 123 encapsulates conductive metal foil 122 and two pieces of field effect transistor nude films or operational amplifier nude film, plastic packaging housing 123 expose portion conductive metal foil, the partially conductive metal forming of this exposure is for realizing the electrical connection of this conductive metal foil and two sensitive elements and base pin; Plastic packaging housing is also provided with the support for supporting two sensitive elements.
Semiconductor package part for pyroelectric infrared sensor of the present invention is by following steps manufacture:
Step 1, provides a conductive metal foil, multiple field effect transistor nude film or multiple operational amplifier nude film is pasted onto on this conductive metal foil, and each field effect transistor nude film or operational amplifier nude film are electrically connected with conductive metal foil.The conductive metal foil used in this step 1 is strip, and the conductive metal foil of this strip is provided with technique edges and pilot hole.
Conductive metal foil is furnished with circuit pattern, utilizes this circuit pattern can realize electrical connection between the sensitive element of pyroelectric infrared sensor and field effect transistor nude film or operational amplifier nude film and sensitive element, field effect transistor nude film or the electrical connection between operational amplifier nude film and base pin.Grid is provided with for the back side draw pad and principal plane and be provided with drain electrode and draw pad and source electrode and draw for the field effect transistor nude film of pad, can the back side of field effect transistor nude film be pasted onto in the metal forming gate pads of conductive metal foil by conducting resinl, source electrode be drawn pad and drain electrode and draw pad and be electrically connected with the metal forming source pad of conductive metal foil and metal forming drain pad respectively by bonding line.
Step 2, by plastic package die plastic packaging multiple field effect transistor nude film or multiple operational amplifier nude film and conductive metal foil, form the plastic packaging housing exposing partially conductive metal forming, form the support for supporting sensitive element, the partially conductive metal forming of this exposure is used for realizing being electrically connected with the sensitive element of pyroelectric infrared sensor and base pin simultaneously.
The partially conductive metal forming exposed first can carry out preformed, and as bending or the direction, side struck out to conductive metal foil 122 are protruded, then being exposed by during plastic package die plastic packaging, the material of plastic packaging employing is such as epoxy resin; The support of supporting sensitive element can be arranged on plastic packaging housing, integrally formed with plastic packaging housing, or this support is by being exposed to plastic packaging outside and for forming with the partially conductive metal forming that sensitive element realizes being electrically connected.By the design to plastic package die, be easy to be formed the hole that exposes conductive metal foil and as the support of support and groove.
Step 3, is separated into the single semiconductor package part for pyroelectric infrared sensor, and removes unnecessary rim charge by the conductive metal foil completing encapsulation.
Claims (16)
1., for a semiconductor package part for pyroelectric infrared sensor, described pyroelectric infrared sensor comprises sensitive element and base pin; This semiconductor package part being used for pyroelectric infrared sensor comprises:
Conductive metal foil;
Support, for supporting described sensitive element;
It is characterized in that, this semiconductor package part being used for pyroelectric infrared sensor also comprises:
Field effect transistor nude film or operational amplifier nude film, be pasted onto on described conductive metal foil, and be electrically connected with this conductive metal foil;
Plastic packaging housing, for encapsulating described conductive metal foil and field effect transistor nude film or operational amplifier nude film; This plastic packaging housing exposes partially conductive metal forming, and the partially conductive metal forming of this exposure is used for realizing being electrically connected with described sensitive element and base pin.
2., as claimed in claim 1 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that,
Described base pin comprises the 3rd pin of the first pin, the second pin and ground connection;
Field effect transistor nude film is pasted onto on described conductive metal foil, and described field effect transistor nude film has gate electrode and draws pad, source electrode extraction pad and drain electrode extraction pad;
Described conductive metal foil comprise metal forming gate pads, metal forming drain pad, metal forming source pad, for be electrically connected with one end of described sensitive element sensitive element first end pad, for be electrically connected with the other end of described sensitive element sensitive element second end pad, for be electrically connected with the first pin the first pin pad, for the second pin pad of being electrically connected with the second pin and the 3rd pin pad for being electrically connected with the 3rd pin; The first described pin pad, the second pin pad and the 3rd pin pad are respectively equipped with the first lead hole, the second lead hole and the 3rd lead hole of passing for the first pin, the second pin and the 3rd pin;
The partially conductive metal forming of described exposure comprises sensitive element first end pad, sensitive element second end pad, the first pin pad, the second pin pad and the 3rd pin pad;
Described plastic packaging housing is provided with the first pin pad hole of exposure first pin pad, the second pin pad hole exposing the second pin pad, the 3rd pin pad hole exposing the 3rd pin pad, the first pin perforation supplying the first pin to penetrate, the second pin perforation supplying the second pin to penetrate and bores a hole for the 3rd pin that the 3rd pin penetrates; Bore a hole with described first pin respectively in first pin pad hole, the second pin pad hole and the 3rd pin pad hole, the second pin is bored a hole and the 3rd pin is bored a hole through connection; The aperture in the first pin pad hole, the second pin pad hole and the 3rd pin pad hole is greater than the aperture of the first pin perforation, the second pin perforation and the perforation of the 3rd pin respectively;
Described gate electrode draws pad, source electrode draws pad and drain electrode extraction pad is electrically connected with described metal forming gate pads, metal forming source pad and metal forming drain pad respectively; Metal forming gate pads is electrically connected with sensitive element first end pad, and metal forming drain pad is electrically connected with the first pin pad, and metal forming source pad is electrically connected with the second pin pad, and sensitive element second end pad is electrically connected with the 3rd pin pad.
3. as claimed in claim 2 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that, described plastic packaging housing is provided with the first conductive hole exposing sensitive element first end pad and the second conductive hole exposing sensitive element second end pad;
Described support is the pair of brackets of projection on plastic packaging housing upper surface, and the first described conductive hole and the second conductive hole are separately positioned on the end face of this pair of brackets.
4. as claimed in claim 2 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that, described plastic packaging housing is provided with the first conductive hole exposing sensitive element first end pad and the second conductive hole exposing sensitive element second end pad;
Described support is the pair of brackets of projection on plastic packaging housing upper surface, the first described conductive hole and the second conductive hole are separately positioned on the position of plastic packaging housing upper surface near this pair of brackets side, and the upper and lower surface of the first conductive hole and all through plastic packaging housing of the second conductive hole;
Described sensitive element first end pad and sensitive element second end pad upwards bend respectively in the first described conductive hole and the second conductive hole, are formed in exposure in the first conductive hole and vertical the first vertical portion extended and the second vertical portion exposing also vertically extension in the second conductive hole; The first described vertical portion and the second vertical portion are close to the side of this pair of brackets respectively, and the end face of this first vertical portion and the second vertical portion flushes with the end face of this pair of brackets respectively.
5., as claimed in claim 2 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that,
Described support is the pair of brackets of projection on plastic packaging housing upper surface, and the lateral surface of this pair of brackets and the lateral surface of plastic packaging housing are roughly positioned at same plane;
Described sensitive element first end pad and sensitive element second end pad are all exposed to outside plastic packaging housing, and upwards bend; The sensitive element first end pad of this bending and sensitive element second end pad are close to the lateral surface of this pair of brackets respectively, and end face flushes with the end face of this pair of brackets respectively.
6. as claimed in claim 1 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that, described plastic packaging housing upper surface offers groove, the support described in the side that this groove two is relative is formed.
7. as claimed in claim 1 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that, described support is arranged on described plastic packaging housing, or this support is by being exposed to plastic packaging outside and for forming with the partially conductive metal forming that described sensitive element realizes being electrically connected.
8. as claimed in claim 2 for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that, described conductive metal foil also comprises the multiple resistance pad for being electrically connected with outer meeting resistance and the multiple electric capacity pads for being electrically connected with external capacitor; Plastic packaging housing is also provided with the multiple resistance conductive hole exposing the plurality of resistance pad correspondingly respectively and the multiple capacitor conductive holes exposing the plurality of electric capacity pad correspondingly respectively;
Described multiple resistance pad and multiple electric capacity pad all protrude to the direction, side of this conductive metal foil, and, the plurality of resistance pad is exposed to the aperture in corresponding resistance conductive hole respectively, and the plurality of electric capacity pad is exposed to the aperture in corresponding capacitor conductive hole respectively.
9. a pyroelectric infrared sensor, comprise with the pipe cap of infrared fileter window, sensitive element, base and the base pin through this base, described pipe cap is located on described base, and be tightly connected with this base, this pyroelectric infrared sensor also comprises the semiconductor encapsulating structure part be arranged on described base, and this semiconductor package part comprises:
Conductive metal foil;
Support, for supporting described sensitive element; Described sensitive element is arranged on described support;
It is characterized in that, this semiconductor package part also comprises:
Field effect transistor nude film or operational amplifier nude film, be pasted onto on described conductive metal foil, and be electrically connected with this conductive metal foil;
Plastic packaging housing, for encapsulating described conductive metal foil and field effect transistor nude film or operational amplifier nude film; This plastic packaging housing exposes partially conductive metal forming, and the partially conductive metal forming of this exposure is used for realizing being electrically connected with described sensitive element and base pin;
Wherein, the two ends of described sensitive element and described base pin are electrically connected with the corresponding conductive metal foil part be exposed respectively.
10. pyroelectric infrared sensor as claimed in claim 9, is characterized in that,
Described base pin comprises the 3rd pin of the first pin, the second pin and ground connection;
Field effect transistor nude film is pasted onto on described conductive metal foil, and described field effect transistor nude film has gate electrode and draws pad, source electrode extraction pad and drain electrode extraction pad;
Described conductive metal foil comprise metal forming gate pads, metal forming drain pad, metal forming source pad, for be electrically connected with one end of described sensitive element sensitive element first end pad, for be electrically connected with the other end of described sensitive element sensitive element second end pad, for be electrically connected with the first pin the first pin pad, for the second pin pad of being electrically connected with the second pin and the 3rd pin pad for being electrically connected with the 3rd pin; The first described pin pad, the second pin pad and the 3rd pin pad are respectively equipped with the first lead hole, the second lead hole and the 3rd lead hole of passing for the first pin, the second pin and the 3rd pin;
The partially conductive metal forming of described exposure comprises sensitive element first end pad, sensitive element second end pad, the first pin pad, the second pin pad and the 3rd pin pad;
Described plastic packaging housing is provided with the first pin pad hole of exposure first pin pad, the second pin pad hole exposing the second pin pad, the 3rd pin pad hole exposing the 3rd pin pad, the first pin perforation supplying the first pin to penetrate, the second pin perforation supplying the second pin to penetrate and bores a hole for the 3rd pin that the 3rd pin penetrates; Bore a hole with described first pin respectively in first pin pad hole, the second pin pad hole and the 3rd pin pad hole, the second pin is bored a hole and the 3rd pin is bored a hole through connection; The aperture in the first pin pad hole, the second pin pad hole and the 3rd pin pad hole is greater than the aperture of the first pin perforation, the second pin perforation and the perforation of the 3rd pin respectively;
Described gate electrode draws pad, source electrode draws pad and drain electrode extraction pad is electrically connected with described metal forming gate pads, metal forming source pad and metal forming drain pad respectively; Metal forming gate pads is electrically connected with sensitive element first end pad, and metal forming drain pad is electrically connected with the first pin pad, and metal forming source pad is electrically connected with the second pin pad, and sensitive element second end pad is electrically connected with the 3rd pin pad
The two ends of described sensitive element are electrically connected with sensitive element first end pad and sensitive element second end pad respectively;
The top of the first described pin penetrates the first pin perforation and the first lead hole successively, and is electrically connected with the first pin pad; The top of the second described pin penetrates the second pin perforation and the second lead hole successively, and is electrically connected with the second pin pad; The top of the 3rd described pin penetrates the 3rd pin perforation and the 3rd lead hole successively, and is electrically connected with the 3rd pin pad.
11. pyroelectric infrared sensors as claimed in claim 10, is characterized in that, described plastic packaging housing is provided with the first conductive hole exposing sensitive element first end pad and the second conductive hole exposing sensitive element second end pad;
Described support is the pair of brackets of projection on plastic packaging housing upper surface, the first described conductive hole and the second conductive hole are separately positioned on the end face of this pair of brackets, in each conductive hole, be filled with conducting resinl, the two ends of sensitive element are electrically connected with sensitive element first end pad and sensitive element second end pad respectively by conducting resinl.
12. pyroelectric infrared sensors as claimed in claim 10, is characterized in that, described plastic packaging housing is provided with the first conductive hole exposing sensitive element first end pad and the second conductive hole exposing sensitive element second end pad;
Described support is the pair of brackets of projection on plastic packaging housing upper surface, the first described conductive hole and the second conductive hole are separately positioned on the position of plastic packaging housing upper surface near this pair of brackets side, and the upper and lower surface of the first conductive hole and all through plastic packaging housing of the second conductive hole;
Described sensitive element first end pad and sensitive element second end pad upwards bend respectively in the first described conductive hole and the second conductive hole, are formed in exposure in the first conductive hole and vertical the first vertical portion extended and the second vertical portion exposing also vertically extension in the second conductive hole; The first described vertical portion and the second vertical portion are close to the side of this pair of brackets respectively, and the end face of this first vertical portion and the second vertical portion flushes with the end face of this pair of brackets respectively, the two ends of sensitive element are electrically connected with the first vertical portion and the second vertical portion respectively by conducting resinl.
13. pyroelectric infrared sensors as claimed in claim 10, it is characterized in that, described support is the pair of brackets of projection on plastic packaging housing upper surface, the lateral surface of this pair of brackets and the lateral surface of plastic packaging housing are roughly positioned at same plane;
Described sensitive element first end pad and sensitive element second end pad are all exposed to outside plastic packaging housing, and upwards bend; The sensitive element first end pad of this bending and sensitive element second end pad are close to the lateral surface of this pair of brackets respectively, and end face flushes with the end face of this pair of brackets respectively, the two ends of sensitive element are electrically connected with sensitive element first end pad and sensitive element second end pad respectively by conducting resinl.
14. pyroelectric infrared sensors as claimed in claim 9, it is characterized in that, described plastic packaging housing upper surface offers groove, the support described in the side that this groove two is relative is formed;
Described sensitive element is placed on the top of groove, and is supported on the relative side of described groove two.
15. pyroelectric infrared sensors as claimed in claim 9, it is characterized in that, described support is arranged on described plastic packaging housing, or this support is by being exposed to plastic packaging outside and for forming with the partially conductive metal forming that described sensitive element realizes being electrically connected.
16. 1 kinds manufacture as claimed in claim 1 for the method for the semiconductor package part of pyroelectric infrared sensor, it is characterized in that, comprise the following steps:
Step 1, provides a conductive metal foil, multiple field effect transistor nude film or multiple operational amplifier nude film is pasted onto on this conductive metal foil, and each field effect transistor nude film or operational amplifier nude film are electrically connected with conductive metal foil;
Step 2, by plastic package die plastic packaging multiple field effect transistor nude film or multiple operational amplifier nude film and conductive metal foil, form the plastic packaging housing exposing partially conductive metal forming, form the support for supporting sensitive element, the partially conductive metal forming of this exposure is used for realizing being electrically connected with the sensitive element of pyroelectric infrared sensor and base pin simultaneously;
Step 3, is separated into the single semiconductor package part for pyroelectric infrared sensor, and removes unnecessary rim charge by the conductive metal foil completing encapsulation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110297563.8A CN103033268B (en) | 2011-10-08 | 2011-10-08 | For the semiconductor package part of pyroelectric infrared sensor and manufacture method thereof and sensor |
| PCT/CN2012/079895 WO2013049983A1 (en) | 2011-10-08 | 2012-08-09 | Semiconductor encapsulation structure for pyroelectric infrared sensor and manufacturing method thereof and sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110297563.8A CN103033268B (en) | 2011-10-08 | 2011-10-08 | For the semiconductor package part of pyroelectric infrared sensor and manufacture method thereof and sensor |
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| Publication Number | Publication Date |
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| CN103033268A CN103033268A (en) | 2013-04-10 |
| CN103033268B true CN103033268B (en) | 2016-04-27 |
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| CN111947786A (en) * | 2020-08-14 | 2020-11-17 | 上海烨映电子技术有限公司 | Infrared temperature measurement sensor device |
| CN112420913A (en) * | 2020-10-10 | 2021-02-26 | 杭州敏和光电子技术有限公司 | Packaging structure applied to infrared sensor and packaging method of infrared sensor |
| CN113091921A (en) * | 2021-03-26 | 2021-07-09 | 瓷金科技(河南)有限公司 | Packaging tube shell for patch type sensor and patch type sensor using same |
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| CN202284971U (en) * | 2011-10-08 | 2012-06-27 | 江苏科融电子技术有限公司 | Semiconductor packaging structural part for pyroelectric infrared sensor and sensor |
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| CN2438108Y (en) * | 2000-08-07 | 2001-07-04 | 上海尼赛拉传感器有限公司 | Vibration- and impact-resistant pyroelectric flame detector |
| KR100870188B1 (en) * | 2005-11-22 | 2008-11-24 | 파나소닉 덴코 가부시키가이샤 | Infrared detector and process for fabricating the same |
| JP5379374B2 (en) * | 2007-11-26 | 2013-12-25 | パナソニック株式会社 | Infrared detector |
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| CN202284971U (en) * | 2011-10-08 | 2012-06-27 | 江苏科融电子技术有限公司 | Semiconductor packaging structural part for pyroelectric infrared sensor and sensor |
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Address after: 215325, Suzhou, Jiangsu province Kunshan Zhouzhuang Town Park Road South Applicant after: Jiangsu Kerong Electronic Technology Co., Ltd. Address before: 215325, Suzhou, Jiangsu province Kunshan Zhouzhuang Town Park Road South Applicant before: Jiangsu Kerong Electronic Technology Co.,Ltd. |
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Effective date of registration: 20180321 Address after: No. 888, Wenchuan Road, Hongkou District, Shanghai Patentee after: Shanghai Nicera Sensor Co., Ltd. Address before: 215325, Suzhou, Jiangsu province Kunshan Zhouzhuang Town Park Road South Patentee before: Jiangsu Kerong Electronic Technology Co., Ltd. |