CN103022312A - Light-emitting diode device and manufacturing method thereof - Google Patents
Light-emitting diode device and manufacturing method thereof Download PDFInfo
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- CN103022312A CN103022312A CN2011102858812A CN201110285881A CN103022312A CN 103022312 A CN103022312 A CN 103022312A CN 2011102858812 A CN2011102858812 A CN 2011102858812A CN 201110285881 A CN201110285881 A CN 201110285881A CN 103022312 A CN103022312 A CN 103022312A
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- light
- emitting diode
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- substrate
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Abstract
The invention discloses a light-emitting diode device which comprises a substrate, a conductive layer, a light-emitting diode chip and an optical part, wherein the conductive layer is attached to the substrate, the light-emitting diode chip is arranged on the conductive layer, the optical part comprises a reflection structure and a lens structure, the lens structure is wrapped on the reflection structure, and the optical part is adhered to the surface of the substrate provided with the conductive layer by the lens structure and covered on the light-emitting diode chip. Compared with the previous techniques, the lens structure of the optical part is wrapped on the reflection structure, so that the light-emitting diode device is simpler in structure, the reflection structure is completely embedded in the lens structure, and the reflection structure is closely connected with the lens structure; and the optical part is fixedly connected to the conductive layer through an adhesive, so that the light-emitting diode device is good in sealing property and simper in packaging process. The invention also relates to a manufacturing method of a light-emitting diode packaging structure.
Description
Technical field
The present invention relates to a kind of semiconductor device and manufacture method thereof, relate in particular to a kind of light-emitting diode assembly and manufacture method thereof.
Background technology
Light-emitting diode (Light Emitting Diode, LED) is a kind of semiconductor element that current conversion can be become the light of particular range of wavelengths.Rely on that its luminous efficiency is high, volume is little, the advantage such as lightweight, environmental protection, be widely applied in the middle of the current every field.
The lensed light-emitting diode assembly of traditional tool generally includes the LED encapsulating structure with reflector and is fixed in lens on the LED encapsulating structure.Usually this kind lens arrangement is fastened on the loading plate or reflector of LED encapsulating structure via screw or trip, yet, the fixed form of this kind lens is comparatively loaded down with trivial details, and owing to easily having the gap between lens arrangement and reflector or the substrate, makes its sealing be difficult to be guaranteed.Therefore, need further to improve.
Summary of the invention
In view of this, be necessary to provide a kind of light-emitting diode assembly and manufacture method thereof of simple for production, good airproof performance.
A kind of light-emitting diode assembly, comprise substrate, the conductive layer of this substrate that is sticked, be located at light-emitting diode chip for backlight unit and optics section on this conductive layer, the lens arrangement that this optics section comprises catoptric arrangement and coats this catoptric arrangement, described optics section establishes this light-emitting diode chip for backlight unit via the surface that is provided with conductive layer and cover that lens arrangement is pasted on this substrate.
A kind of light-emitting diode assembly manufacture method, its step comprises: a substrate is provided, and this substrate comprises a first surface and a second surface; Form a conductive layer on the surface of this substrate, this conductive layer comprises the first electrode and the second electrode, described the first electrode and the second electrode space and all fit in first surface and the second surface of this substrate; Provide on the light-emitting diode chip for backlight unit electrode located therein, this light-emitting diode chip for backlight unit is by routing or cover brilliant mode and this first electrode and the second electrode electrode formation electric connection, forms an electric department; One catoptric arrangement is provided, utilizes the mode of injection mo(u)lding to form a lens arrangement, make this lens arrangement coat this catoptric arrangement, thereby form an optics section, this lens arrangement comprises a binding face and an exiting surface, and this binding face is the plane of a rule, and this exiting surface is a convex surface; Binding face etching at this lens arrangement forms a groove, and this recess edge end links to each other with described catoptric arrangement one end; Described optics section is connected with this packaging body by gluing mode, makes this groove accommodate described light-emitting diode chip for backlight unit, make simultaneously this binding face be positioned at the two side portions of groove and described the first electrode and the second electrode and fit.
Compare with prior art, the lens arrangement of this optics section coats this catoptric arrangement, the structure that makes this light-emitting diode assembly is more simple, this catoptric arrangement is embedded in this lens arrangement fully, this catoptric arrangement is connected with lens arrangement closely and via viscose glue described optics section is connected and fixed on the described conductive layer, make this light-emitting diode assembly good airproof performance, packaging technology is easier simultaneously.
Description of drawings
Fig. 1 is the decomposing schematic representation of the light-emitting diode assembly of one embodiment of the invention.
Fig. 2 is the structural representation of light-emitting diode assembly shown in Figure 1.
Fig. 3 is the structural representation of another angle of light-emitting diode assembly shown in Figure 1.
Fig. 4 to Fig. 9 is the manufacturing step schematic diagram of light-emitting diode assembly shown in Figure 1.
The main element symbol description
| Light- |
100 |
| |
10 |
| |
20 |
| |
30 |
| |
40 |
| Light-emitting diode chip for |
50 |
| |
31 |
| |
32 |
| The |
41 |
| The |
42 |
| Contact- |
411、421 |
| The |
412、422 |
| |
413、423 |
| |
51 |
| |
60 |
| |
70 |
| |
61 |
| |
62 |
| |
611 |
| Contact-making surface | 612 |
| The |
71 |
| The top | 72 |
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Below with reference to the drawings, the present invention is described in further detail.
Fig. 1 is to the light-emitting diode assembly 100 that Figure 3 shows that the embodiment of the invention provides, and this light-emitting diode assembly 100 comprises electric department 10 and covers the optics section 20 of this electric department 10.
This electric department 10 comprises substrate 30, is attached at the conductive layer 40 of this substrate 30, is arranged on the light-emitting diode chip for backlight unit 50 on this conductive layer 40.This optics section 20 is affixed to merge to cover with this conductive layer 40 and establishes described light-emitting diode chip for backlight unit 50.
Concrete, see also Fig. 1, in the present embodiment, this substrate 30 is cuboid, and it comprises a first surface 31 and a second surface 32.In the present embodiment, this first surface 31 is a plane.This substrate 30 is silicon substrate, plastic base or ceramic substrate.This substrate 30 also can be made by in the following material one or more: GaAs (GaAs), zinc oxide (ZnO) and indium phosphide (InP) etc.
See also Fig. 2, described conductive layer 40 is attached at the surface of this substrate 30, and it comprises the first electrode 41 and the second electrode 42, and this first electrode 41 and the second electrode 42 are made by metal material, and be bent into U-shapedly, be attached at respectively first surface 31 and the second surface 32 of substrate 30.This first electrode 41 and the second electrode 42 are spaced from each other to avoid short circuit.The first electrode 41 and the second electrode 42 include the contact-segment 411,421 that is attached at second surface 32, the wiring section 412 that is attached at first surface 31,422 and connect this contact-segment 411,421 and wiring section 412,422 linkage section 413,423.This contact-segment 411,421 is used for being connected with in the luminous diode chip 50 that the electric energy input is seted out with the circuit (not shown) of outside.This wiring section 412,422 is used for being electrically connected with light-emitting diode chip for backlight unit 50, and is luminous to drive light-emitting diode chip for backlight unit 50.This wiring section 412,422 is parallel to contact-segment 411,421 and perpendicular to linkage section 413,423.
This light-emitting diode chip for backlight unit 50 is arranged on the wiring section 412 of this first electrode 41.In the present embodiment, this light-emitting diode chip for backlight unit 50 is positioned on the wiring section 412 of the first electrode 41 side near these the second electrode 42 wiring sections 422.Be provided with the insulating material (not shown) between this light-emitting diode chip for backlight unit 50 and this first electrode 41, two electrodes of this light-emitting diode chip for backlight unit 50 are connected to respectively the wiring section 412,422 of the first electrode 41 and the second electrode 42 by two gold threads 51, electrically conduct with realization.In other embodiments, this light-emitting diode chip for backlight unit 50 also can be electrically connected with the first electrode 41 and 42 formation of the second electrode to cover brilliant mode.
Please consult simultaneously Fig. 3, this optics section 20 comprises a lens arrangement 60 and a catoptric arrangement 70, and described lens arrangement 60 coats this catoptric arrangement 70.
This lens arrangement 60 comprises a binding face 61 and an exiting surface 62, described binding face 61 is the plane of a rule, in the present embodiment, the size of this lens arrangement 60 is measure-alike with this whole electric department 10, and namely the binding face 61 of this lens arrangement 60 covers whole electric department 10.These binding face 61 middle parts are recessed to form a groove 611 to these exiting surface 62 directions, and described groove 611 is used for accommodating, cover and establish this light-emitting diode chip for backlight unit 50 and electrode 41,42 subregion.The part that this binding face 61 is positioned at groove 611 both sides comprises two contact-making surfaces 612, this two contact-making surface 612 fits symmetrically and with wiring section 412,422 by gluing mode and described the first electrode 41 and the second electrode 42, thereby this lens arrangement 60 is attached at the surface that is formed with conductive layer 40 of this substrate 30 via this binding face 61.This exiting surface 62 is a convex surface, and itself and binding face 61 join and be protruding to the side away from this binding face 61.
Described catoptric arrangement 70 is coated in this lens arrangement 60, it is roughly a ring-type curved surface sidewall, it comprises a bottom 71 and a top 72, the binding face 61 of described this lens arrangement 60 of bottom 71 relative proximities and be connected with the bottom edge of this groove 611, the exiting surface 62 of described this lens arrangement 60 of top 72 relative proximities also is coated in this lens arrangement 60 fully.This catoptric arrangement 70 from the bottom 71 towards the top 72 directions are diffusion type, namely the radius at 72 places, top of this annular reflex structure 70 is greater than the radius at these 71 places, bottom.This catoptric arrangement 70 can be made by LCP (Liquid Crystal Polymer, i.e. liquid crystal polymer) material, also can adopt metal material to make.In addition, in manufacturing process, can sneak into plastic cement (Plastic) particle, pottery (Ceramic) particle or high volatile volatile solution in the described LCP material.
During manufacturing, the first separately encapsulation of this electric department 10 and this optics section 20 is fixed together by gluing mode afterwards.Below, take the light-emitting diode assembly 100 of the embodiment of the invention as example, the manufacture process of this light-emitting diode assembly 100 is described in conjunction with Fig. 2.
First step please refer to Fig. 4, and a substrate 30 is provided.This substrate 30 has first surface 31 and second surface 32.This substrate 30 is silicon substrate, plastic base or ceramic substrate, also can be made by in the following material one or more: GaAs (GaAs), zinc oxide (ZnO) and indium phosphide (InP) etc.
Second step, please refer to Fig. 5, form a conductive layer 40 on the surface of this substrate 30, this conductive layer 40 comprises the first electrode 41 and the second electrode 42, described the first electrode 41 and the second electrode 42 spaces and all fit in first surface 31 and the second surface 32 of this substrate 30, the first electrode 41 and the second electrode 42 include the contact-segment 411 that is positioned at substrate 30 second surfaces 32,421, be positioned at the wiring section 412 of substrate 30 first surfaces, 422 and connect this contact-segment 411,421 and wiring section 412,422 linkage section 413,423, this wiring section 412,422 are parallel to contact-segment 411,421 and perpendicular to linkage section 413,423.
Third step please refer to Fig. 6, a light-emitting diode chip for backlight unit 50 is located on the wiring section 412 of this first electrode 41, and is passed through mode and this first electrode 41 and the 42 formation electric connections of the second electrode of routing.Understandable, among other embodiment, also can be to cover brilliant mode and the first electrode 41 and the 42 formation electric connections of the second electrode.
The 4th step, please refer to Fig. 7, one catoptric arrangement 70 is provided, this catoptric arrangement 70 is curved surface in the form of a ring roughly, it comprises a bottom 71 and a top 72, this catoptric arrangement 70 from the bottom 71 towards the top 72 directions are diffusion type, namely the radius on the top 72 of this catoptric arrangement 70 is greater than the radius of this bottom 71, this catoptric arrangement 70 can be made by liquid crystal high polymer material, also can adopt metal material to make.
Utilize the mode of injection mo(u)lding around this catoptric arrangement 70, to form a lens arrangement 60, make this lens arrangement 60 coat described catoptric arrangement 70 fully, form an optics section 20, described lens arrangement 60 comprises a binding face 61 and an exiting surface 62, the tabular of 61 one-tenth rules of this binding face, described exiting surface 62 is a convex surface; The size of this lens arrangement 60 is measure-alike with this whole electric department 10, and namely the binding face 61 of this lens arrangement 60 can cover the light-emitting face of whole electric department 10.
The 5th step please refer to Fig. 8, utilizes etching technique to offer a groove 611 at the binding face 61 of this lens arrangement 60, and these groove 611 bottom margins just are connected the bottom 71 of this catoptric arrangement 70.
The 6th step, please refer to Fig. 9, described optics section 20 is covered on this electric department 10 by gluing mode, make the groove 611 of this lens arrangement 60 accommodate this light-emitting diode chip for backlight unit 50, the part that makes simultaneously this binding face 61 be positioned at groove 611 both sides fits with this first electrode 41 and the second electrode 42.
Be understandable that, can include the fluorescent glue (not shown) in the groove 611 of this lens arrangement 60, this fluorescent glue comprises one or more in garnet-base fluorescent material, silicate-base fluorescent material, orthosilicate base fluorescent powder, sulfide base fluorescent powder, thiogallate base fluorescent powder, nitrogen oxide base fluorescent powder and the nitride based fluorescent material.
In addition, in the process that forms this optics section 20, also can form first lens arrangement 60 and offer groove 611, the technology that embeds via mould is again imbedded this catoptric arrangement 70 in this lens arrangement 60.
Compare with prior art, the lens arrangement of this optics section coats this catoptric arrangement, make that this light-emitting diode assembly structure is more simple, this catoptric arrangement is embedded in this lens arrangement fully, this catoptric arrangement is connected with lens arrangement closely and via viscose glue described optics section is connected and fixed on the described conductive layer, make this light-emitting diode assembly good airproof performance, packaging technology is simpler simultaneously.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.
Claims (10)
1. light-emitting diode assembly, comprise substrate, the conductive layer of this substrate that is sticked, be located at light-emitting diode chip for backlight unit and optics section on this conductive layer, it is characterized in that: the lens arrangement that this optics section comprises catoptric arrangement and coats this catoptric arrangement, described optics section establishes this light-emitting diode chip for backlight unit via the surface that is provided with conductive layer and cover that lens arrangement is pasted on this substrate.
2. light-emitting diode assembly as claimed in claim 1, it is characterized in that: described lens arrangement comprises a binding face and is opened in groove on this binding face, fit in the surface that is provided with conductive layer of this binding face and substrate, this groove cover is established this and is located at light-emitting diode chip for backlight unit on the conductive layer.
3. light-emitting diode assembly as claimed in claim 2, it is characterized in that: described binding face fits by the surface that is provided with conductive layer of viscose glue and substrate.
4. light-emitting diode assembly as claimed in claim 2, it is characterized in that: described lens arrangement comprises an exiting surface, this exiting surface is a convex surface, and this exiting surface and binding face joins and to the side projection away from this binding face.
5. light-emitting diode assembly as claimed in claim 1, it is characterized in that: this catoptric arrangement in the form of a ring.
6. light-emitting diode assembly as claimed in claim 5 is characterized in that: this catoptric arrangement comprises the bottom of adjacent recess and the top of contiguous exiting surface, and this tip radius is greater than this bottom radius.
7. package structure for LED as claimed in claim 6, it is characterized in that: the bottom of this catoptric arrangement is connected with described bottom portion of groove edge.
8. the manufacture method of a light-emitting diode assembly, its step comprises:
One substrate is provided, and this substrate comprises a first surface and a second surface;
Form a conductive layer on the surface of this substrate, this conductive layer comprises the first electrode and the second electrode, described the first electrode and the second electrode space and all fit in first surface and the second surface of this substrate;
Provide on the light-emitting diode chip for backlight unit electrode located therein, this light-emitting diode chip for backlight unit is by routing or cover brilliant mode and this first electrode and the second electrode electrode formation electric connection, forms an electric department;
One catoptric arrangement is provided, utilizes the mode of injection mo(u)lding to form a lens arrangement, make this lens arrangement coat this catoptric arrangement, thereby form an optics section, this lens arrangement comprises a binding face and an exiting surface;
Binding face etching at this lens arrangement forms a groove, and this recess edge end links to each other with described catoptric arrangement one end;
Described optics section is connected with this electric department by gluing mode, makes this groove accommodate described light-emitting diode chip for backlight unit, the part that makes simultaneously this binding face be positioned at the groove both sides fits with described the first electrode and the second electrode.
9. the manufacture method of light-emitting diode assembly as claimed in claim 8, it is characterized in that: this binding face is the plane of a rule, and this exiting surface is a convex surface.
10. the manufacture method of light-emitting diode assembly as claimed in claim 8, it is characterized in that: this catoptric arrangement comprises a bottom and a top, this tip radius is greater than this bottom radius.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102858812A CN103022312A (en) | 2011-09-23 | 2011-09-23 | Light-emitting diode device and manufacturing method thereof |
| TW100134682A TWI447970B (en) | 2011-09-23 | 2011-09-26 | Led apparatus and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102858812A CN103022312A (en) | 2011-09-23 | 2011-09-23 | Light-emitting diode device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103022312A true CN103022312A (en) | 2013-04-03 |
Family
ID=47970662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102858812A Pending CN103022312A (en) | 2011-09-23 | 2011-09-23 | Light-emitting diode device and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103022312A (en) |
| TW (1) | TWI447970B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI690095B (en) * | 2017-03-30 | 2020-04-01 | 宏齊科技股份有限公司 | Light emitting device |
| TWI812124B (en) * | 2022-03-28 | 2023-08-11 | 李銘洛 | Electronic module and carrier structure thereof and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006109113A2 (en) * | 2005-04-12 | 2006-10-19 | Acol Technologies Sa | Primary optic for a light emitting diode |
| CN1929159A (en) * | 2005-09-08 | 2007-03-14 | 斯坦雷电气株式会社 | Semiconductor illumination device |
| CN1992357A (en) * | 2005-12-30 | 2007-07-04 | 深圳市蓝科电子有限公司 | Method for manufacturing white light diode with low attenuation |
| US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7280288B2 (en) * | 2004-06-04 | 2007-10-09 | Cree, Inc. | Composite optical lens with an integrated reflector |
| KR100648628B1 (en) * | 2005-12-29 | 2006-11-24 | 서울반도체 주식회사 | Light emitting diode |
-
2011
- 2011-09-23 CN CN2011102858812A patent/CN103022312A/en active Pending
- 2011-09-26 TW TW100134682A patent/TWI447970B/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006109113A2 (en) * | 2005-04-12 | 2006-10-19 | Acol Technologies Sa | Primary optic for a light emitting diode |
| CN1929159A (en) * | 2005-09-08 | 2007-03-14 | 斯坦雷电气株式会社 | Semiconductor illumination device |
| CN1992357A (en) * | 2005-12-30 | 2007-07-04 | 深圳市蓝科电子有限公司 | Method for manufacturing white light diode with low attenuation |
| US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI447970B (en) | 2014-08-01 |
| TW201314969A (en) | 2013-04-01 |
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Application publication date: 20130403 |