CN103022177A - Uncooled pyroelectric infrared detector and preparation method thereof - Google Patents

Uncooled pyroelectric infrared detector and preparation method thereof Download PDF

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CN103022177A
CN103022177A CN2013100094964A CN201310009496A CN103022177A CN 103022177 A CN103022177 A CN 103022177A CN 2013100094964 A CN2013100094964 A CN 2013100094964A CN 201310009496 A CN201310009496 A CN 201310009496A CN 103022177 A CN103022177 A CN 103022177A
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thermo
substrate
pyroelectric infrared
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electrode
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王晓川
张欣翼
许丽娜
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SICHUAN HUIYUAN SCIENCE AND TECHNOLOGY DEVELOPMENT Co Ltd
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Abstract

The invention discloses an uncooled pyroelectric infrared detector and a preparation method thereof and belongs to the technical field of electronic materials and components. The uncooled pyroelectric infrared detector comprises a substrate and heat sensitive units, each heat sensitive unit comprises a heat sensitive film and electrodes, each heat sensitive film with the thickness of 50nm-5um is made of VOx1, amorphous silicon, barium strontium titanate (Bax2Sr1-x2)TiO3, lead zirconate titanate Pb(Zrx3Ti1-x3)O3, lead lanthanum zirconate titanate (Pby1La1-y1)(Zrx4Ti1-x4)O3 or lead scandium tantalite Pb(Tax5Sc1-x5)O3, wherein 1<x1</=2.5, 0.5</=x2</=0.9, 0</=x3<0.9, 0.2<x4<0.5, 0.9<y1<1, and 0.2<x5<0.9. The uncooled pyroelectric infrared detector has excellent infrared response performance.

Description

A kind of uncooled pyroelectric infrared detectors and preparation method
Technical field
The invention belongs to the electronically materials and component technical field, relate in particular to a kind of uncooled pyroelectric infrared detectors and preparation method.
Background technology
Infrared detection technique is by wide popularization and application, and detector is core in infrared detection technique, and it has determined performance and the application of the detection equipment that it is supporting.By having or not the refrigerating plant Infrared Detectors to be divided into refrigeration mode and non-refrigeration type.Because refrigeration mode infrared imaging instrument refrigerating system is heavy, mobility is poor, so that its application is restricted.Although the non-refrigeration type Infrared Detectors does not have the refrigeration mode performance high, owing to do not need refrigerating plant, have moderate performance, volume is little, lightweight, easy to use, low in energy consumption, price is low characteristics, can be widely used in small-sized, the low-cost detection system.
The structure of traditional non-refrigerated infrared detector as shown in Figure 1, make thermal insulation structure 4 at substrate 5, make thermo-responsive unit at thermal insulation structure 4 again, thermo-responsive unit is made of thermo-responsive film 3 and electrode 2, after being subject to infrared radiation 1, can cause that thermo-responsive cell temperature increases, cause the variation of the electric property of thermo-responsive film 3, after subsequent conditioning circuit is processed, realize the detection to infrared radiation.Wherein the effect of thermal insulation structure 4 is, reduce the towards periphery medium loss of heat that thermo-responsive unit absorbs, improve the thermal insulation properties of thermo-responsive unit, making thermo-responsive film 3 obtain large as far as possible temperature increases, therefore thermal insulation structure 4 has very important impact to non-refrigerated infrared detector, and its design and preparation are the keys that obtains the high-performance non-refrigerated infrared detector.
At present, thermal insulation structure 4 mainly contains micro-bridge structure (referring to document: Mike A.Todd, Paul A.Manning, Paul P.Donohue, Alan G.Brown and Rex Watton, Proceedings of SPIE, USA, 4130 (2000), 128-139), the thermal insulation film layer structure is (referring to document: Wang Sanhong, Wu Xiaoqing, Yao Xi, XI AN JIAOTONG UNIVERSITY Subject Index, 35 (2001), 146-148) and the substrate back of the body empty structure (referring to document: Kazuhiko Hashimoto, Huaping Xu, Tomonori Mukaigawa, Ryuichi Kubo, Hong Zhuc, Minoru Noda, Masanori Okuyama, Sensors and Actuators A, 88 (2001), 10-19).Although the micro-bridge structure thermal insulation properties is high, technical difficulty height, complex process, cost height; The thermal insulation film layer structure refers to the very low thin-film material of preparation one deck thermal conductivity between thermo-responsive unit and substrate 5, reduces thermo-responsive unit to the heat conduction of substrate 5, and thin-film material commonly used has porous silica (SiO 2), polyimides (PI) etc.; The substrate back of the body is emptied structure and is referred to thermo-responsive unit directly is produced on the substrate 5, and thermo-responsive unit part substrate is behind emptied, and reduces the thermal capacitance of substrate 5, improves the temperature response of thermo-responsive unit.In these three kinds of structures, thermo-responsive unit also needs to carry out graphical PROCESS FOR TREATMENT, makes the environment heat isolation in itself and the plane, reduces horizontal thermal loss, and the heat that reduces between pixel is crosstalked.
Usually, thermal insulation structure 4 and thermo-responsive unit all adopt the method for dry method (plasma etching)/wet method (chemical corrosion) etching to make in above-mentioned three kinds of structures, need respectively thermal insulation structure 4, sensitive material 3, electrode material 2 to be carried out graphical treatment.2. the processing step of graphical treatment applies photoresist for 1. preparing thin-film material each time, 3. by certain figure photoresist is exposed, and 4. removes photoresist, and 5. 6. dry method or wet etching thin-film material remove photoresist.Carrying out in the process of graphical treatment with the method for dry/wet etching, for different materials, need to select different etching technics, the making flow process is many, complex process; In the etching process, stay residue at film surface easily, be unfavorable for the growth of lower film material, and then cause material property to descend, the infringement device performance; In the etching process, plasma/corrosive liquid can also can cause material property to descend to thermo-responsive thin-film material injury, the infringement device performance.In addition, as when the making substrate back of the body is emptied structure, need the thickness of etching to reach hundreds of microns, because the dry/wet etching speed is slower, usually need tens hours, this just causes very long, the inefficiency of the course of processing.Therefore, low with method making non-refrigerated infrared detector complex process, the efficient of dry/wet etching, can damage device performance.
Summary of the invention
Goal of the invention of the present invention is: for the problem of above-mentioned existence, provide a kind of thermal insulation properties is high, thermal capacitance is little, mechanical performance is good pyroelectric infrared detector and preparation method.
Uncooled pyroelectric infrared detectors of the present invention, comprise substrate (6), thermo-responsive unit (7), described thermo-responsive unit (7) comprises thermo-responsive film (3) and electrode (2), it is characterized in that, the material of described thermo-responsive film (3) is VOx1, or amorphous silicon, or barium strontium titanate (Bax2Sr1-x2) TiO3, or lead zirconate titanate Pb (Zrx3Ti1-x3) O3, or (Zrx4Ti1-x4) O3 of lead lanthanum zirconate titanate (Pby1La1-y1), or tantalum scandium acid plumbum Pb (Tax5Sc1-x5) O3;
Wherein, 1＜x1≤2.5,0.5≤x2≤0.9,0≤x3＜0.9,0.2＜x4＜0.5,0.9＜y1＜1,0.2＜x5＜0.9.
Further, the thickness of described thermo-responsive film (3) is set to 50nm-5um;
The material of electrode is (Ba X6Sr 1-x6) RuO 3, 0≤x6＜1, the thickness of electrode is 10nm-1um.
Also be provided with supporting layer between substrate of the present invention (6) and thermo-responsive unit (7), the material of described supporting layer is SiO 2, or porous SiO 2, or Si 3N 4The thickness of supporting layer can be set to 50nm-50um.
Uncooled pyroelectric infrared detectors of the present invention possesses insulation property height, thermal capacitance is little, mechanical performance is good beneficial effect.
The present invention has also improved a kind of preparation method of uncooled pyroelectric infrared detectors, it is characterized in that, comprises the steps:
Step 1: select silicon single crystal substrate, or SrTiO 3Monocrystal chip, or LaAlO 3Monocrystal chip, or Al 2O 3Monocrystal chip prepares substrate;
Step 2: in the thermo-responsive unit of described substrate preparation, described thermo-responsive unit comprises thermo-responsive film and electrode;
Step 3: with the direction of etching laser machining self-heating sensing unit to substrate, described thermo-responsive film and electrode are carried out graphical treatment;
Step 4: with the direction of etching laser machining self-heating sensing unit to substrate, substrate is carried out graphical treatment.
When adopting traditional dry/wet etching method to prepare uncooled pyroelectric infrared detectors, at every turn can only a kind of thin-film material of etching, different material requires is adopted different technique, 6 processing steps such as each etching needs gluing, photoetching, development, etching, remove photoresist, etching process can be polluted the growth that film interface affects lower film, the etching process reduction film performance that can adjacent/this layer film causes damage, etching speed is slow, is not suitable for the material of hundreds of micron thickness is carried out etching.In contrast to this, adopt the present invention to have following beneficial effect: when using laser ablation, to etching material non-selectivity, can realize an etching to plural layers, can not pollute the interface of film growth, can not damage the performance of material; Etching speed is fast, is suitable for the material of hundreds of micron thickness is carried out etching; Machining accuracy can reach several microns, can satisfy the preparation requirement of high density, fine; Good process repeatability, rate of finished products height are fit to produce in enormous quantities; Laser ablation equipment is ripe, and technique is simple, can decrease element manufacturing cost.
Description of drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is traditional pyroelectric infrared detector fundamental diagram;
Fig. 2 is the structural representation of the specific embodiment of the invention;
Fig. 3 is the structure side view of the pyroelectric infrared detector of the embodiment of the invention 1;
Fig. 4 is the structure vertical view of the pyroelectric infrared detector of the embodiment of the invention 1;
Fig. 5 is the substrate schematic diagram after the embodiment of the invention 1 graphical;
Fig. 6 is the stereoscan photograph of the embodiment of the invention 1;
Fig. 7 is the photoelectric respone curve chart of the embodiment of the invention 1 of the present invention;
Mark among the figure, 1-infrared radiation, 2-electrode, 2-1-bottom electrode, 2-2-top electrode, the bottom electrode of 2-1-1-be not etched, the top electrode of 2-2-1-be not etched, 3-thermo-responsive film, 4-thermal insulation structure, 5-supporting layer, the supporting layer of 5-1-be etched away, the supporting layer of 5-2-be not etched away, 6-substrate, the substrate of 6-1-be etched away, 7-thermo-responsive unit NiCr/BST/Pt, 8-by the NiCr/BST/Pt of laser incising eating away, 9-not by the NiCr/BST/Pt of laser incising eating away.
Embodiment
Disclosed all features in this specification, or the step in disclosed all methods or the process except mutually exclusive feature and/or step, all can make up by any way.
Disclosed arbitrary feature in this specification (comprising any accessory claim, summary and accompanying drawing) is unless special narration all can be replaced by other equivalences or the alternative features with similar purpose.That is, unless special narration, each feature is an example in a series of equivalences or the similar characteristics.
Referring to Fig. 2, non-refrigerated infrared detector of the present invention comprises substrate 6, thermo-responsive unit, and thermo-responsive unit comprises thermo-responsive film 3 and electrode, and the thickness of thermo-responsive film 3 is 50nm-5um, and the material of thermo-responsive film 3 is VO X1Or amorphous silicon or barium strontium titanate (Ba X2Sr 1-x2) TiO 3, or lead zirconate titanate Pb (Zr X3Ti 1-x3) O 3, or lead lanthanum zirconate titanate (Pb Y1La 1-y1) (Zr X4Ti 1-x4) O 3, or tantalum scandium acid plumbum Pb (Ta X5Sc 1-x5) O 3
In the material of above-mentioned thermo- responsive film 3,1＜x1≤2.5,0.5≤x2≤0.9,0≤x3＜0.9,0.2＜x4＜0.5,0.9＜y1＜1,0.2＜x5＜0.9.
The material of electrode is (Ba X6Sr 1-x6) RuO 3(0≤x6＜1), the thickness of electrode are 10nm-1um, and the thickness of substrate 6 is 0.01 ~ 10mm.Electrode can be arranged at the top of thermo-responsive film 3 and/or below, the upper and lower surface that Fig. 2 has provided at thermo-responsive film 3 arranges electrode 2-1,2-2.
Also be provided with supporting layer 5 between substrate 6 and thermo-responsive unit, the material of supporting layer 5 is SiO 2, or porous SiO 2, or Si 3N 4The thickness of supporting layer 5 can be arranged on 50nm-50um.
The preparation method of non-refrigerated infrared detector of the present invention may further comprise the steps:
Step 1: preparation substrate 5 and supporting layer 6.
Substrate 6 available materials have: silicon (Si) monocrystal chip, or strontium titanates (SrTiO 3) monocrystal chip, or lanthanum aluminate (LaAlO 3) monocrystal chip, or aluminium oxide (Al 2O 3) monocrystal chip; The thickness of substrate 6 is 0.01-10mm.
For the material of supporting layer 5, can select the material identical with substrate 6, also can select the material different with substrate 6.When supporting layer 5 and substrate 6 are selected same material, then do not need to prepare in addition the material of supporting layer 5, but the part of substrate 6 is got final product as supporting layer.When supporting layer 5 was not identical with substrate 6 materials, supporting layer 5 available materials had: SiO 2, or porous SiO 2, or silicon nitride (Si 3N 4), or PI; Corresponding preparation method has sputter, or pulsed laser deposition (PLD), or metal-organic chemical vapor deposition equipment (MOCVD), or plasma activated chemical vapour deposition (PEVCD); The thickness of backing material 7 is 50nm-50um;
Step 2: in the thermo-responsive unit 7 of fid layer 5 preparation.
Thermo-responsive unit 7 is made of thermo-responsive film 3 and electrode, and electrode can be positioned at the upper and lower surface of thermo-responsive film 3,2-1 as shown in Figure 2,2-2; Also can only be positioned at the one side of thermo-responsive film 3.Thermo-responsive film 3 available materials have vanadium oxide VO X1(1＜x1≤2.5), or amorphous silicon a-Si, or barium strontium titanate (Ba X2Sr 1-x2) TiO 3(0.5≤x2≤0.9), or lead zirconate titanate Pb (Zr X3Ti 1-x3) O 3(0≤x3＜0.9), or lead lanthanum zirconate titanate (Pb Y1La 1-y1) (Zr X4Ti 1-x4) O 3(0.2＜x4＜0.5) (0.9＜y1＜1), or tantalum scandium acid plumbum Pb (Ta X5Sc 1-x5) O 3(0.2＜x5＜0.9); The thickness of thermo-responsive film 3 is 50nm-5um; The preparation method of thermo-responsive film 3 can be sputter, or PLD, or MOCVD, or sol-gal process (Sol-gel), or deposition of metal organic method (MOD).Electrode 2 available materials can be platinum (Pt), or gold (Au), or aluminium (Al), or nichrome (NiCr), or tin indium oxide (In 2O 3-SnO 2), or yttrium barium copper oxide (YBaCuO), or ruthenic acid strontium barium (Ba X6Sr 1-x6) RuO 3(0≤x6＜1), or nickel acid lanthanum (LaNbO 3); The thickness of electrode is 10nm-1um; The preparation method of electrode has sputter, or PLD.
Step 3: with the method for laser ablation, the direction from thermo-responsive unit 7 to substrate 6 is carried out graphical treatment to thermo-responsive film 3 and electrode.
Structure according to designed pyroelectric infrared detector, determine the part that thermo-responsive film 3 and electrode need to be etched, its figure is input in the control software of etching laser machining, the setting laser etching parameters, such as laser beam area, power density and etching speed, etching laser machining carries out etching to thermo-responsive film 3 and electrode.The parameter of laser ablation is laser beam spot diameter 1-100um, power 0.1-10W, sweep speed 0-500mm/s.
Step 4: with the method for laser ablation, the direction from thermo-responsive unit 7 to substrate 6 is to the graphical treatment of carrying out of supporting layer 7.
According to the structure of designed pyroelectric infrared detector, determine the part that supporting layer 5 need to be etched, its figure is input in the control software of etching laser machining, the setting laser etching parameters is such as laser beam area, power density and etching speed.The parameter of laser ablation is laser beam spot diameter 1-100um, power 0.1-10W, sweep speed 0-500mm/s.
Step 5: the method with laser ablation is carried out graphical treatment according to the top-down direction to substrate 6.
According to the structure of designed pyroelectric infrared detector, determine the part that substrate 6 need to be etched, its figure is input in the control software of etching laser machining, the setting laser etching parameters is such as laser beam area, power density and etching speed.The parameter of laser ablation is laser beam spot diameter 1-100um, power 0.1-10W, sweep speed 0-500mm/s.
The principle of said method of the present invention is when laser beam acts on sample surfaces, setting laser bundle parameter, such as laser beam area, power density and etching speed, just the material of certain depth and width can be etched away, realize the graphical treatment to thermo-responsive unit, supporting layer 5 and substrate 6.Behind thermo-responsive film 3 and electrode pattern, the most materials around the thermo-responsive unit are etched away, and have hindered transverse heat transfer, have reduced thermal loss; After supporting layer 5 was carried out the etching figure, the supporting layer that is not etched was as the supporting hot sensing unit, and remaining is etched away, and has hindered transverse heat transfer, has reduced thermal loss; After substrate 6 was carried out graphical treatment, the backing material at the back side, thermo-responsive unit was etched away, and had reduced the vertical heat conduction to substrate 6, had reduced thermal loss.The pyroelectric infrared detector that the above-mentioned graphical process of laser ablation of process is made, has unique thermal insulation structure (referring to Fig. 2), it combines the advantage that micro-bridge structure, thermal insulation film layer structure and the substrate back of the body are emptied the structure three, has thermal insulation properties height, thermal capacitance is little, mechanical performance is excellent characteristics.
Embodiment 1
Referring to Fig. 3,4, obtain through the following steps non-refrigerated infrared detector of the present invention:
(1) the Si monocrystal chip of getting the N-shaped polishing of (100) orientation is used as substrate 6, and substrate thickness is 500um.After conventional semiconductor technology was cleaned, at Si substrate preparation SiO2 film, as the material of supporting layer 5, the thickness of supporting layer 5 was 10um with the PECVD method, and substrate 6 is consistent with the length of supporting layer 5.
(2) on described Si/SiO2 sample, prepare the Pt film with direct current magnetron sputtering process, as bottom electrode 2-1, thickness is 100nm.Bottom electrode 2-1 is consistent with the length of substrate 6, as shown in Figure 3.
(3) on the Pt/SiO2/Si sample, with radio-frequency magnetron sputter method preparation (Ba0.65Sr0.35) TiO3 film, as the material of thermo-responsive film 3, thickness is 500nm.The length of thermo-responsive film 3 is less than substrate 6.
(4) on the BST/Pt/SiO2/Si sample, prepare the NiCr film with direct current magnetron sputtering process, as top electrode 2-2, thickness is 50nm.Top electrode 2-2 is consistent with the length of thermo-responsive film 3.
(5) with etching laser machining the NiCr/BST/Pt in the NiCr/BST/Pt/SiO2/Si sample is carried out graphical treatment, the parameter of laser beam is: laser beam spot diameter 1-100um, power 0.1-10W, sweep speed 0-500mm/s namely carries out graphical treatment to top electrode 2-2, thermo-responsive film 3 and bottom electrode 2-1;
(6) with etching laser machining the sample of step (5) is proceeded graphical treatment, finish the graphical treatment to supporting layer 5, the figure of the SiO2 supporting layer 5-1 that is etched is shown in Fig. 3,4.The parameter of laser beam is: laser beam spot diameter 1-100um, power 0.1-10W, sweep speed 0-500mm/s.
(7) from the bottom surface of silicon lining 6 sample of step (6) is proceeded graphical treatment with etching laser machining, the parameter of laser beam is: laser beam spot diameter 1-100um, power 0.1-10W, sweep speed 0-500mm/s, the schematic diagram of the bottom surface of the silicon that is etched lining 6 is referring to Fig. 5.
Obtain non-refrigerated infrared detector of the present invention through above-mentioned steps (1)-(7), shown in Fig. 3,4, its stereoscan photograph as shown in Figure 6.Not by 8 among the NiCr/BST/Pt(figure of laser incising eating away) be used for to keep top electrode 2-2, bottom electrode 2-1 respectively and the conducting of the top electrode 2-2-1 that is not etched, the bottom electrode 2-1-1 that is not etched, and reduce 7 among the thermo-responsive unit NiCr/BST/Pt(figure) to the heat conduction of 2-2-1 and 2-1-1.
Non-refrigerated infrared detector of the present invention is carried out the photoelectric properties test, test result as shown in Figure 7, curve 25 is photoelectric respone signals of pyroelectric infrared detector among the figure, amplitude is 130mV, curve 26 is chopper control signals, frequency is 40Hz, and curve 25 and 26 same frequencys change, and illustrate that detector is subjected to the chopper signal controlling to produce the photoelectric respone signal.Test condition is black matrix emissivity ε=0.98, blackbody temperature T BB=800K, ambient temperature T C=305K surveys first photosurface and aperture spacing d=15cm, the aperture area A S=0.096cm 2, noise bandwidth Δ f=0.2395, photosurface effective area A D=0.005cm 2, noise peak-to-peak value V N=0.1027mv.As shown in Figure 7, infrared response voltage peak-to-peak value V S=125mv, according to following formula:
D * = A D &Delta;f P V S V N , P = C RMS &epsiv;&sigma; ( T BB 4 - T C 4 ) &pi;d 2 A S A D
Wherein, energy root mean square conversion coefficient C RMS=0.447, these special fence constant σ=5.67 * 10 -12Wcm -2K -4Calculate D*=6.22 * 10 7CmHz 1/2W -1This shows that the non-refrigerated infrared detector of invention has good infrared response performance.
The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature or any new combination that discloses in this manual, and the arbitrary new method that discloses or step or any new combination of process.

Claims (10)

1. uncooled pyroelectric infrared detectors, comprise substrate (6), thermo-responsive unit (7), described thermo-responsive unit (7) comprises thermo-responsive film (3) and electrode (2), it is characterized in that, the material of described thermo-responsive film (3) is VOx1, or amorphous silicon, or barium strontium titanate (Bax2Sr1-x2) TiO3, or lead zirconate titanate Pb (Zrx3Ti1-x3) O3, or (Zrx4Ti1-x4) O3 of lead lanthanum zirconate titanate (Pby1La1-y1), or tantalum scandium acid plumbum Pb (Tax5Sc1-x5) O3;
Wherein, 1＜x1≤2.5,0.5≤x2≤0.9,0≤x3＜0.9,0.2＜x4＜0.5,0.9＜y1＜1,0.2＜x5＜0.9.
2. uncooled pyroelectric infrared detectors as claimed in claim 1 is characterized in that, the thickness of described thermo-responsive film (3) is 50nm-5um.
3. uncooled pyroelectric infrared detectors as claimed in claim 1 is characterized in that, the material of described electrode (2) is (Ba X6Sr 1-x6) RuO 3, 0≤x6＜1, the thickness of electrode is 10nm-1um.
4. uncooled pyroelectric infrared detectors as claimed in claim 1 is characterized in that, the thickness of described substrate (6) is 0.01 ~ 10mm.
5. uncooled pyroelectric infrared detectors as claimed in claim 1 is characterized in that, described electrode (2) be arranged at the top of thermo-responsive film (3) and/or below.
6. such as claim 1,2,3,4 or 5 described uncooled pyroelectric infrared detectors, it is characterized in that also be provided with supporting layer (5) between described substrate (6) and thermo-responsive unit (7), the material of described supporting layer (5) is SiO 2, or porous SiO 2, or Si 3N 4, or PI.
7. uncooled pyroelectric infrared detectors as claimed in claim 6 is characterized in that, the thickness of described supporting layer (5) is 50nm-50um.
8. a method for preparing the uncooled pyroelectric infrared detectors of claim 1 is characterized in that, comprises the steps:
Step 1: select silicon single crystal substrate, or SrTiO 3Monocrystal chip, or LaAlO 3Monocrystal chip, or Al 2O 3Monocrystal chip prepares substrate;
Step 2: in the thermo-responsive unit of described substrate preparation, described thermo-responsive unit comprises thermo-responsive film and electrode;
Step 3: with the direction of etching laser machining self-heating sensing unit to substrate, described thermo-responsive film and electrode are carried out graphical treatment;
Step 4: with the direction of etching laser machining self-heating sensing unit to substrate, substrate is carried out graphical treatment.
9. pyroelectric infrared detector preparation method as claimed in claim 8 is characterized in that, in the described step 2, also comprises, selects SiO 2, or porous SiO 2, or Si 3N 4, or the PI material prepares supporting layer; Then in step 4, stand-by etching laser machining carries out graphical treatment to substrate after described supporting layer is carried out graphical treatment again.
10. pyroelectric infrared detector preparation method as claimed in claim 9 is characterized in that, the laser beam spot diameter 1-100um of described etching laser machining is set, power 0.1-10W, sweep speed 0-500mm/s.
CN2013100094964A 2013-01-11 2013-01-11 Uncooled pyroelectric infrared detector and preparation method thereof Pending CN103022177A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110926604A (en) * 2019-12-03 2020-03-27 合肥工业大学 Photo-thermal detection unit based on chromium-niobium co-doped vanadium dioxide epitaxial film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
马韬等: "热释电薄膜单片式UFPA器件微桥单元结构研究", 《红外技术》, vol. 32, no. 1, 31 January 2010 (2010-01-31) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110926604A (en) * 2019-12-03 2020-03-27 合肥工业大学 Photo-thermal detection unit based on chromium-niobium co-doped vanadium dioxide epitaxial film

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Application publication date: 20130403