CN103021609B - The method for designing of large-scale thick-film resistor network - Google Patents
The method for designing of large-scale thick-film resistor network Download PDFInfo
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- CN103021609B CN103021609B CN201210406396.0A CN201210406396A CN103021609B CN 103021609 B CN103021609 B CN 103021609B CN 201210406396 A CN201210406396 A CN 201210406396A CN 103021609 B CN103021609 B CN 103021609B
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Abstract
The present invention relates to a kind of method for designing of large-scale thick-film resistor network, comprise: (1) point quasi-resistance: resistance is divided into some classes, every quasi-resistance adopts a kind of resistance slurry and designs as same components and parts, and each components and parts are the thick-film resistor of same size and the compatible design of plate resistor; (2) layout design: on substrate employing wait line-spacing, etc. row design several unit apart from matrix pattern; (3) silk screen printing: adopt silk-screen printing technique printed resistor; (4) be greater than to resistance after silk screen printing the resistance designing nominal value to correct; (5) wire bonding: make resistance form resistor network by leading wire bonding in the bonding region of the one or both ends of resistance, makes its formation thick film chip that to be connected with the pin of encapsulating package at the exit of resistor network by lead wire bonding; (6) thick film chip is packaged in encapsulation cover plate.This method simplifies design, the reduction difficulty of processing of large-scale thick-film resistor network, improves rate of finished products.
Description
Technical field
The present invention relates to a kind of method for designing of large-scale thick-film resistor network.
Background technology
The research of resistor network is current one large hot issue, have the equivalent resistance of the relevant various resistor network of a lot of paper, periodical introduction to calculate and mathematics model analysis, but they all exists very large problem, specific as follows:
These researchs concentrate on the equivalent resistance calculating of some resistor networks on the one hand, and be all well-regulated resistor network: structure is regular, the resistance of resistance is distributed with rule, and the resistor network equivalent resistance as the calculating of trapezoid resistance network equivalent resistance, hexagon distribution calculates, sierpinski resistor network equivalent resistance calculates, star resistor network equivalent resistance calculates and the calculating of some other resistor network equivalent resistance.
On the other hand often kind of network equivalent resistance ask method also all more special, trapezoidal equivalent resistance is solved, with equivalent resistance of Fibonacci Series computation rule connection electrical resistance network etc. as ordered series of numbers method, these research major defect models are suitable for ideal, method transplantability is poor, and processes means difficulty realizes.Large-scale thick-film resistor network matrix production is domestic at present does not also have similar thick film products.
Summary of the invention
The object of this invention is to provide a kind of method for designing of the random large-scale thick-film resistor network that is applicable to that resistor network structure is regular, resistance distributes.
For achieving the above object, the technical solution used in the present invention is:
A method for designing for large-scale thick-film resistor network, described large-scale thick-film resistor network is encapsulated by several resistance and forms, and it comprises the steps:
(1) quasi-resistance is divided: described resistance is divided into some classes by its resistance, resistance described in each class adopts a kind of resistance slurry and designs as same components and parts, and each described components and parts are the thick-film resistor of same size and the compatible design of plate resistor;
(2) layout design: adopt all equally spaced matrix pattern between often going, often arranging to design several unit on substrate, described unit and described resistance one_to_one corresponding, each described unit comprises resistive arrangement effective coverage, be arranged at two adhesion zone at described two ends, resistive arrangement effective coverage, connect described in resistive arrangement effective coverage and the bonding region of described adhesion zone;
(3) silk screen printing: adopt silk-screen printing technique printed resistor in the unit on described substrate, the resistance described in each class adopts same resistance slurry to be printed in described resistive arrangement effective coverage, forms substrate for film deposition;
(4) resistance corrects: resistance resistance after silk screen printing being greater than to design nominal value corrects, and makes the design nominal value that the resistance of each resistance reaches described;
(5) wire bonding: make itself and other resistance form the resistor network of electricity interlinkage by leading wire bonding in the bonding region of the one or both ends of resistance, makes it be connected with the pin of encapsulating package at the exit of described resistor network by lead wire bonding and forms thick film chip;
(6) shell encapsulation: described thick film chip is packaged in encapsulation cover plate.
Preferably, in described step (1), first described resistance is divided into several modules by its resistance, the resistance in each described module is further divided into some classes; In described step (2) and step (3), each described module adopts the substrate design described in a piece and printing is described substrate for film deposition; In described step (5), the substrate for film deposition described in each is carried out after wire bonding forms described thick film chip, by bonding with described encapsulating package for each described thick film chip and carry out bonding to described outer lead and form core group.
Preferably, in described step (2), each described cell size is identical and press matrix form and arrange, and the spacing between adjacent row or adjacent row is equal.
Preferably, in described step (3), the area of printed resistor is less than the area of described resistive arrangement effective coverage.
Preferably, in described step (4), resistance after silk screen printing is greater than to the resistance of design nominal value, in the adhesion zone at its two ends, bonding Parallel Adjustment resistance makes the design nominal value that its resistance reaches described; Resistance after silk screen printing is less than to the resistance of design nominal value, adopts the design nominal value that laser resistor trimming method makes its resistance reach described.
Preferably, described correction resistance is plate resistor, and described plate resistor adopts conductive epoxy to be pasted on described adhesion zone.
Preferably, in described step (5), described leading wire bonding and described lead wire bonding all adopt gold wire bonding technique, the connecting line that institute bonding is formed by the through hole of described substrate for film deposition at the front of described substrate for film deposition or back side cabling.
Preferably, in described step (6), adopt packed by metal casing technique.
Preferably, adopt parallel weld seam that described chip and described encapsulation cover plate are stitched weldering mutually.
Preferably, described substrate is Al
2o
3ceramic substrate.
Because technique scheme is used, the present invention compared with prior art has following advantages:
(1) resistance is by class stepping, and simplified design, avoids each resistance to design one by one, and during minimizing Butut, resistance puts the probability of makeing mistakes;
(2) each resistance is independently unit before non-wire bonding, and solving silk screen printing resistance and resistance timing routine is requirement in open loop situations, makes resistance printing become possibility, improves the precision of resistance resistance trimming simultaneously;
(3) the unit rules arrangement on substrate, is conducive to the making of probe, can makes the probe of one piece of laser resistor trimming and be common to a whole set of resistance network circuit by step-by-step system, making processes become possibility.
(4) resistance corrects and makes to revise in production, do over again conveniently, and processes difficulty significantly reduces, and improves rate of finished products, large-scale thick-film resistor network matrix is produced and becomes a reality;
(5) the matrix form laying out pattern of rule, bonding wire is also regular, the difficulty decreasing processing and check, when avoiding conventional design, bonding wire is mixed and disorderly, the problem substantially cannot processed and check.
Accompanying drawing explanation
Accompanying drawing 1 is the circuit theory diagrams of this large-scale thick-film resistor network.
Accompanying drawing 2 is the schematic diagram of the unit on the substrate of the method for designing of large-scale thick-film resistor network of the present invention.
Accompanying drawing 3 is the matrix design protocol schematic diagram of the method for designing of large-scale thick-film resistor network of the present invention.
Accompanying drawing 4 is the matrix domain schematic diagram of the method for designing of large-scale thick-film resistor network of the present invention.
Accompanying drawing 5 is the encapsulating structure figure of the method for designing of large-scale thick-film resistor network of the present invention.
Accompanying drawing 6 be the method for designing of large-scale thick-film resistor network of the present invention process chart.
Embodiment
Below in conjunction with embodiment shown in the drawings, the invention will be further described.
Embodiment one: a kind of method for designing of large-scale thick-film resistor network, resistance regular for resistor network structure distributes the design of random large-scale thick-film resistor network and processing.
Large-scale thick-film resistor network in the present embodiment is encapsulated by several resistance and forms, such as, one large-scale thick-film resistor network has 8640 resistance altogether, its Standard resistance range is very wide, for 10k Ω-50M Ω, resistance precision and temperature characterisitic index request higher, and there is no the resistance of similar resistance, each resistance is all in multiple loop, and its circuit theory as shown in Figure 1.
The design of this large-scale thick-film resistor network has following difficult point:
(1) resistance quantity is many, scope wide, resistance distribution is random, adopts thick film ink kind a lot;
(2) resistance is not identical, and conventional design designs respectively one by one, and design efforts would is very big;
(3) the resistive arrangement consistency of sheet resistance of the same race is difficult to meet the demands;
(4) the resistance quantity of sheet resistance of the same race is many, scope wide, and in processes, silk screen printing can not ensure that each resistance is within Standard resistance range;
(5) resistance precision and temperature characterisitic index request high, add design and processing difficulty;
(6) if domain conventional design, laying out pattern is random, to design and inspection domain correctness, all substantially can not realize;
(7) during conventional design, the probe region of resistance is put arbitrarily, and the making of laser resistor trimming probe is complicated, and quantity reaches more than hundreds of, technique can not realize;
(8) all resistance is all loop, and in multiple loop, and when can not meet silk screen printing resistance and laser resistor trimming, routine is the basic demand in open loop situations.
Shown in accompanying drawing 6, the concrete scheme step of the method for designing of large-scale thick-film resistor network of the present invention is as described below.
(1) quasi-resistance is divided
First whole 8640 resistance are divided into 6 modules, each module comprises 1440 resistance.Classified by its resistance by each module 1440 resistance, the resistance of each quasi-resistance, in certain interval range, is specifically classified as follows shown in table: (unit is Ω)
Each resistance in each class adopts a kind of resistance slurry and designs according to same components and parts.This method for designing can avoid each resistance to be designed to separately components and parts, each components and parts are the thick-film resistor of same size and the compatible design of plate resistor, effectively can reduce workload, simplified design, ensure the consistency of the resistance value design of sheet resistance of the same race, make circuit be converted into product and provide possibility.
(2) layout design
Select Al
2o
3ceramic substrate, its cost is low, and resistance to mechanical impact strength is high.Substrate adopts process for filling hole, and filling perforation conductor material is the thick film conductor paste of DUPONT-6388 conductor paste or suitable performance.
Substrate adopt matrix pattern design several unit, unit and resistance one_to_one corresponding.Each unit comprises resistive arrangement effective coverage, is arranged at two adhesion zone at two ends, resistive arrangement effective coverage, the bonding region of contact resistance design effective coverage and adhesion zone.Each cell size is identical and press matrix form arrangement, and the spacing between adjacent row or adjacent row is equal.
Each modular design is on one piece of substrate.According to the area of substrate, on the basis taking into full account cloth version principle, by 1440 unit identical sized by 1440 of each module resistive arrangement.The size of each unit can change according to actual needs.In the present embodiment, shown in accompanying drawing 2, the area of an adhesion zone is 58mil × 20mil, and the area of resistive arrangement effective coverage is 58mil × 40mil, and each unit can paste 0603 plate resistor.The matrix design protocol of whole substrate is see shown in accompanying drawing 3.
(3) silk screen printing
Adopt silk-screen printing technique printed resistor in unit on substrate, each quasi-resistance adopts same resistance slurry to be printed in resistive arrangement effective coverage, forms substrate for film deposition.
When printing, should be noted that the area of printed resistor is less than the area of resistive arrangement effective coverage, screen mesh on the mask plate passed through, thick film ink is deposited on the substrate of insulation equably, form the pattern with certain thickness and shape.
Related process parameters and material as follows:
A) insulated substrate: 96% Al
2o
3pottery;
B) web plate order number: 300 order ~ 400 order stainless steel cloths;
C) mask thickness: 25 μm ~ 40 μm;
The thick film conductor paste of d) conductor paste: DUPONT-5771Au or quite performance;
E) resistance slurry: the resistance slurry of the different sheet resistances such as Dupont-2170 type 10M Ω/, Dupont-2160 type 1M Ω/ or quite performance;
F) the glass glaze slurry of glass glaze slurry: Dupont-7137 or suitable performance.
(4) resistance corrects
Extensive resistance network circuit is due to wire mark resistance huge amount, and the resistance number number of often kind of sheet resistance of each module, with hundred notes, therefore needs resistance resistance after silk screen printing being greater than to design nominal value to correct, makes the resistance of each resistance reach design nominal value.
Resistance after silk screen printing is greater than to the resistance of design nominal value, in the adhesion zone at its two ends, bonding Parallel Adjustment resistance makes its resistance reach design nominal value.Correct resistance and select 0603 plate resistor, plate resistor adopts conductive epoxy to be pasted on adhesion zone.The correction resistance pasted is equivalent to a resistance in parallel on printed resistor and makes it reach design nominal value.Resistance as a 10k Ω is printed as 15k Ω, if paste a 20k Ω plate resistor on the adhesion zone of this resistance, by calculating, 15k Ω 20k Ω in parallel just can be corrected to 10k Ω, meets the demands.
Resistance after silk screen printing is less than to the resistance of design nominal value, adopts laser resistor trimming method to make its resistance reach design nominal value.
Resistance is corrected, underproof resistor satisfied requirement can be made, Realization of Product is processed and provides guarantee, and greatly reduce workload, improve rate of finished products.
(5) wire bonding
In the bonding region of the one or both ends of resistance, make itself and other resistance form the resistor network of electricity interlinkage by leading wire bonding, make it be connected with the pin of encapsulating package at the exit of resistor network by lead wire bonding and form thick film chip.So far the matrix layout design of resistor network completes, shown in accompanying drawing 4.Bonding with encapsulating package respectively and bonding is carried out to outer lead form core group after the leading wire bonding of each module.
Leading wire bonding and lead wire bonding all adopt gold wire bonding technique, and the connecting line that institute's bonding is formed passes through the through hole of substrate for film deposition at the front of substrate for film deposition or back side cabling.
Key process parameter and material as follows:
A) conducting resinl: H20E or quite performance conductive epoxy glue;
B) gold wire bonding method: the full-automatic continuous bonding of gold wire ball or the continuous bonding of manual semi-automatic gold wire ball;
C) bonding gold wire string diameter: φ 18 μm ~ φ 40 μm, gold content: 99.99%Au.
D) adhesives: 5020-1-.005 epoxy film or quite performance adhesives.
(6) shell encapsulation
Thick film chip is packaged in encapsulation cover plate.
Concrete encapsulating structure can be selected according to actual needs.In the present embodiment, for packed by metal casing technique, adopt parallel weld seam that chip and encapsulation cover plate are stitched weldering mutually.Metal-packaged shell in the present embodiment is surrounding lead-in wire, and lead spacing is 2.54mm, and pin count is 166, and concrete encapsulating structure is see shown in accompanying drawing 5.Metallic packaging shell and supporting cover plate: the cut down steel of gold-plated or nickel plating or quite performance adhesives.
The method for designing of large-scale thick-film resistor network of the present invention has following advantages:
(1) resistance is by class stepping, and simplified design, avoids each resistance to design one by one, and during minimizing Butut, resistance puts the probability of makeing mistakes;
(2) spacing between every row or column of large-scale thick-film resistor network is consistent, and each resistance has one or both ends to be connected with other resistance in network by gold wire bonding.Each resistance is independently unit before non-wire bonding, and solving silk screen printing resistance and resistance timing routine is requirement in open loop situations, makes resistance printing become possibility, improves the precision of resistance resistance trimming simultaneously;
(3) the unit rules arrangement on substrate, is conducive to the making of probe, can makes the probe of one piece of laser resistor trimming and be common to a whole set of resistance network circuit by step-by-step system, making processes become possibility.Design according to conventional thinking, domain is random, and it is also random that the probe region of resistance is put, due to the limited amount of each resistance trimming of resistance trimming probe, maximum 20 resistance in theory, so at least will make the probe that hundreds of is individual, technique can not realize.
(4) resistance slurry of the same race each silk screen printing resistance number reaches hundreds of, certainly has resistance to exceed standard, the method corrected by plate resistor, make to revise in production, do over again conveniently, processes difficulty significantly reduces, and improves rate of finished products, large-scale thick-film resistor network matrix is produced and becomes a reality;
(5) the matrix form laying out pattern of rule, bonding wire is also regular, the difficulty decreasing processing and check, when avoiding conventional design, bonding wire is mixed and disorderly, the problem substantially cannot processed and check.
Above-described embodiment, only for technical conceive of the present invention and feature are described, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (10)
1. a method for designing for large-scale thick-film resistor network, described large-scale thick-film resistor network is encapsulated by several resistance and forms, and it is characterized in that: it comprises the steps:
(1) quasi-resistance is divided: described resistance is divided into some classes by its resistance, resistance described in each class adopts a kind of resistance slurry and designs as same components and parts, and each described components and parts are the thick-film resistor of same size and the compatible design of plate resistor;
(2) layout design: adopt all equally spaced matrix pattern between often going, often arranging to design several unit on substrate, described unit and described resistance one_to_one corresponding, each described unit comprises resistive arrangement effective coverage, be arranged at two adhesion zone at described two ends, resistive arrangement effective coverage, connect described in resistive arrangement effective coverage and the bonding region of described adhesion zone;
(3) silk screen printing: adopt silk-screen printing technique printed resistor in the unit on described substrate, the resistance described in each class adopts same resistance slurry to be printed in described resistive arrangement effective coverage, forms substrate for film deposition;
(4) resistance corrects: resistance resistance after silk screen printing being greater than to design nominal value corrects, and makes the design nominal value that the resistance of each resistance reaches described; Resistance after silk screen printing is less than to the resistance of design nominal value, adopts the design nominal value that laser resistor trimming method makes its resistance reach described;
(5) wire bonding: make itself and other resistance form the resistor network of electricity interlinkage by leading wire bonding in the bonding region of the one or both ends of resistance, makes it be connected with the pin of encapsulating package at the exit of described resistor network by lead wire bonding and forms thick film chip;
(6) shell encapsulation: described thick film chip is packaged in encapsulation cover plate.
2. the method for designing of large-scale thick-film resistor network according to claim 1, is characterized in that: in described step (1), first described resistance is divided into several modules by its resistance, and the resistance in each described module is further divided into some classes; In described step (2) and step (3), each described module adopts the substrate design described in a piece and printing is described substrate for film deposition; In described step (5), the substrate for film deposition described in each is carried out after wire bonding forms described thick film chip, by bonding with described encapsulating package for each described thick film chip and carry out bonding to described outer lead and form core group.
3. the method for designing of large-scale thick-film resistor network according to claim 1, is characterized in that: in described step (2), and each described cell size is identical and press matrix form and arrange, and the spacing between adjacent row or adjacent row is equal.
4. the method for designing of large-scale thick-film resistor network according to claim 1, is characterized in that: in described step (3), and the area of printed resistor is less than the area of described resistive arrangement effective coverage.
5. the method for designing of large-scale thick-film resistor network according to claim 1, it is characterized in that: in described step (4), resistance after silk screen printing is greater than to the resistance of design nominal value, in the adhesion zone at its two ends, bonding Parallel Adjustment resistance makes the design nominal value that its resistance reaches described.
6. the method for designing of large-scale thick-film resistor network according to claim 5, is characterized in that: described correction resistance is plate resistor, and described plate resistor adopts conductive epoxy to be pasted on described adhesion zone.
7. the method for designing of large-scale thick-film resistor network according to claim 1, it is characterized in that: in described step (5), described leading wire bonding and described lead wire bonding all adopt gold wire bonding technique, the connecting line that institute bonding is formed by the through hole of described substrate for film deposition at the front of described substrate for film deposition or back side cabling.
8. the method for designing of large-scale thick-film resistor network according to claim 1, is characterized in that: in described step (6), adopts packed by metal casing technique.
9. the method for designing of large-scale thick-film resistor network according to claim 8, is characterized in that: adopt parallel weld seam that described chip and described encapsulation cover plate are stitched weldering mutually.
10. the method for designing of large-scale thick-film resistor network according to claim 1, is characterized in that: described substrate is Al
2o
3ceramic substrate.
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| CN104347208B (en) * | 2013-07-31 | 2018-10-12 | 南京中兴新软件有限责任公司 | A kind of resistor production method, resistor and circuit |
| CN104093224A (en) * | 2014-06-11 | 2014-10-08 | 浙江西德斯电气有限公司 | Heating plate based on large-power thick-membrane resistor, and parallel screen printing method thereof |
| CN104409323B (en) * | 2014-10-24 | 2017-05-24 | 中国电子科技集团公司第四十一研究所 | Microwave film resistor manufacture method |
| CN112820715B (en) * | 2020-12-28 | 2022-12-06 | 中国电子科技集团公司第十三研究所 | Wafer-level on-chip resistor standard sample wafer for calibration and preparation method thereof |
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| US5521576A (en) * | 1993-10-06 | 1996-05-28 | Collins; Franklyn M. | Fine-line thick film resistors and resistor networks and method of making same |
| CN102129964A (en) * | 2010-12-13 | 2011-07-20 | 华东光电集成器件研究所 | Method for manufacturing resistor end effect curves of thick-film integrated circuit |
| CN202373399U (en) * | 2011-12-12 | 2012-08-08 | 中国振华集团云科电子有限公司 | Thick film chip fixed resistor network |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475400B2 (en) * | 2001-02-26 | 2002-11-05 | Trw Inc. | Method for controlling the sheet resistance of thin film resistors |
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|---|---|---|---|---|
| US5521576A (en) * | 1993-10-06 | 1996-05-28 | Collins; Franklyn M. | Fine-line thick film resistors and resistor networks and method of making same |
| CN102129964A (en) * | 2010-12-13 | 2011-07-20 | 华东光电集成器件研究所 | Method for manufacturing resistor end effect curves of thick-film integrated circuit |
| CN202373399U (en) * | 2011-12-12 | 2012-08-08 | 中国振华集团云科电子有限公司 | Thick film chip fixed resistor network |
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Effective date of registration: 20180813 Address after: 233030 2016 Tang He road, Bengbu, Anhui Patentee after: Huadong Photoelectric Integrated Device Research Institute Address before: 215163 No. 89 Longshan Road, hi tech Zone, Suzhou, Jiangsu Patentee before: China North Industries Group Corporation No.214 Research Institute Suzhou R&D Center |