CN103018808B - Photon sieve and manufacturing method thereof - Google Patents
Photon sieve and manufacturing method thereof Download PDFInfo
- Publication number
- CN103018808B CN103018808B CN201110286868.9A CN201110286868A CN103018808B CN 103018808 B CN103018808 B CN 103018808B CN 201110286868 A CN201110286868 A CN 201110286868A CN 103018808 B CN103018808 B CN 103018808B
- Authority
- CN
- China
- Prior art keywords
- multilayer film
- photon screen
- light
- deielectric
- described light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Laminated Bodies (AREA)
Abstract
The embodiment of the invention discloses a photon sieve and a manufacturing method thereof. The photon sieve comprises a light-transmitting substrate, a plurality of light-tight films and a plurality of small holes, wherein the plurality of light-tight films are located on the light-transmitting substrate and consist of a plurality of metal films and dielectric films at intervals; and the plurality of small holes are formed in the light-tight films and are distributed in a zonal shape, and a plurality of small holes in each girdle are randomly distributed and are not overlapped with one other. Because the plurality of metal films and dielectric films at intervals are arranged on the light-transmitting substrate, and the plurality of small holes distributed in the zonal shape are formed in the plurality of metal films and dielectric films at intervals, when light irradiates the a photon sieve, the surface plasma polarization and the surface plasma coupling of the metal films and the dielectric films are enhanced, the light transmittance is effectively improved, and further the diffraction efficiency of the photon sieve is improved.
Description
Technical field
The present invention relates to diffraction optical element technical field, more particularly, relate to a kind of photon screen and preparation method thereof.
Background technology
Photon screen is a kind of novel diffraction optical element based on fresnel's zone plate, and the printing opacity aperture of region corresponding for bright ring on fresnel's zone plate by a large amount of stochastic distribution replaces by it, and the diameter of aperture is 1.5 times of corresponding zone plate endless belt width.Photon screen breaches the resolution restriction of zone plate, and the focal beam spot obtained is less than the zone plate focal beam spot of same characteristic dimension, and effectively inhibits the secondary lobe of focal beam spot, reduces bias light thus improves resolution.
Photon screen makes simply compared with zone plate, superior performance, the focusing and imaging of grenz ray, extreme ultraviolet light has good application, can be used for the research fields such as high resolving power microscopy, spectroscopy and Next Generation Lithographies.
Even so, but the subject matter that common at present photon screen exists is exactly that diffraction efficiency is low, in its practical application, therefore just had very large restriction.
Summary of the invention
In view of this, the invention provides a kind of photon screen and preparation method thereof, to solve the low problem of existing photon screen diffraction efficiency.
For achieving the above object, the invention provides following technical scheme:
A kind of photon screen, described photon screen comprises:
Light-transmissive substrates;
Be positioned at the light tight multilayer film in described light-transmissive substrates, described light tight multilayer film comprises the metal film and deielectric-coating that arrange between multi-layer phase;
Be arranged on the multiple apertures distributed on described light tight multilayer film, in multiple ring-band shape, the multiple aperture stochastic distribution on each endless belt and not overlapping each other.
Preferably, in above-mentioned photon screen, described endless belt center radius is: r
m 2=2mf λ+m
2λ
2; Wherein, m is positive integer, and f is focal length, and λ is wavelength.
Preferably, in above-mentioned photon screen, the diameter of the multiple apertures on each endless belt is all identical, and is: d
m=λ/2r
m, wherein λ is wavelength.
Preferably, in above-mentioned photon screen, described metal film and deielectric-coating are five layers.
Preferably, in above-mentioned photon screen, the thickness of every layer of metal film and deielectric-coating is 30nm.
Preferably, in above-mentioned photon screen, described metal membrane material is silver.
Preferably, in above-mentioned photon screen, described deielectric-coating material is silicon dioxide, alundum (Al2O3), hafnium oxide or zirconium dioxide.
Preferably, in above-mentioned photon screen, described light-transmissive substrates is fused quartz, simple glass or organic glass.
Present invention also offers a kind of photon screen method for making, the method comprises:
Polished and cleaned is carried out to light-transmissive substrates;
Described light-transmissive substrates is formed metal film alternately and deielectric-coating, thus form light tight multilayer film in described light-transmissive substrates;
In described light tight multilayer film, form multiple apertures of multiple ring-band shape distribution, and the multiple apertures on each endless belt do not overlap each other.
Preferably, in said method, in described light tight multilayer film, form multiple apertures of multiple ring-band shape distribution, specifically comprise:
Spin coating electron sensitive resist on described light tight multilayer film;
Under the blocking of mask plate with the multiple little sectional hole patterns that multiple ring-band shape distributes, adopt electron sensitive resist described in electron beam irradiation, the multiple apertures on described mask plate on each endless belt are all not overlapping each other;
Electron sensitive resist after adopting electron beam irradiation is developed, in described electron sensitive resist, forms multiple apertures of multiple ring-band shape distribution;
For mask, described light tight multilayer film is etched with the described electron sensitive resist with multiple apertures of multiple ring-band shape distribution, in described light tight multilayer film, form multiple apertures of multiple ring-band shape distribution.
As can be seen from technique scheme, photon screen provided by the present invention comprises: light-transmissive substrates; Be positioned at the light tight multilayer film in described light-transmissive substrates, described light tight multilayer film comprises the metal film and deielectric-coating that arrange between multi-layer phase; Be arranged on the multiple apertures distributed on described light tight multilayer film, in multiple ring-band shape, the multiple aperture stochastic distribution on each endless belt and not overlapping each other.Photon screen provided by the present invention, owing to light-transmissive substrates being provided with multilayer metal film alternately and deielectric-coating, and in described multilayer metal film alternately and deielectric-coating, be provided with multiple apertures of the distribution in ring-band shape, therefore, when light is radiated on described photon screen, to be enhanced in the surface plasma body polarization of metal film and deielectric-coating and surface plasma coupling, thus effectively improve the transmitance of light, and then improve the diffraction efficiency of photon screen.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of photon screen provided by the present invention;
Fig. 2 is the structure for amplifying schematic diagram of dotted line frame indicating section in Fig. 1;
Fig. 3 is the schematic flow sheet of photon screen method for making provided by the present invention;
The scanning electron microscope (SEM) photograph of the photon screen of Fig. 4 made by the present invention;
The focus characteristics analogous diagram of the photon screen of Fig. 5 made by the present invention;
The focus characteristics analogous diagram of the photon screen that Fig. 6 is formed for employing traditional handicraft.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment one
With reference to the structural representation that figure 1, Fig. 1 is photon screen provided by the present invention, described photon screen comprises: light-transmissive substrates 1; Be positioned at the light tight multilayer film 2 in described light-transmissive substrates 1, described light tight multilayer film 2 comprises the metal film and deielectric-coating that arrange between multi-layer phase; Be arranged on the multiple apertures 3 distributed on described light tight multilayer film 2, in multiple ring-band shape, multiple apertures 3 stochastic distribution on each endless belt and not overlapping each other.
In order to more clearly describe the position relationship of light-transmissive substrates 1 and upper light tight multilayer film 2 thereof, partial enlargement has been carried out to dotted box portion in Fig. 1, the diagrammatic cross-section obtained as shown in Figure 2, light-transmissive substrates 1 has been shown in Fig. 2, be positioned at the light tight multilayer film 2 in light-transmissive substrates 1, described light tight multilayer film 2 comprises the metal film 21 and deielectric-coating 22 that arrange between multi-layer phase.In concrete forming process, first can form metal film in light-transmissive substrates 1, also first can form deielectric-coating, to this present invention, there is no particular restriction.
Preferably, can be arranged so that metal film 21 and deielectric-coating 22 are respectively five layers, and make the thickness of each layer metal film 21 and deielectric-coating 22 be 30nm by controlling formation time.The material of metal film 21 described in the present embodiment can be silver, and described deielectric-coating 22 material can be silicon dioxide (SiO
2), alundum (Al2O3) (Al
2o
3), hafnium oxide (HfO
2) or zirconium dioxide (ZrO
2) etc.
Described light-transmissive substrates, as the term suggests be namely the substrate that can make light transmission, the material of described light-transmissive substrates can be fused quartz, simple glass or organic glass etc.
Being positioned at multiple apertures 3 on light tight multilayer film 2 can for circular, also can be the regular polygons such as square, regular hexagon, be described in the embodiment of the present invention for circle.
Described multiple aperture 3 is distributed on multiple endless belt, and the center radius r of these endless belt
m, endless belt width w
mmeet following relation:
r
m 2＝2mfλ+m
2λ
2，
w
m＝λ/2r
m，
Wherein, m is positive integer, and f is focal length, and λ is wavelength.
Stochastic distribution state is all become for the multiple apertures on arbitrary endless belt, that is: the spacing on same endless belt between adjacent apertures does not limit, but multiple apertures on same endless belt are all not overlapping each other, and diameter is all equal and equal the width of its place endless belt, therefore, being distributed in width is w
mendless belt on the diameter d of multiple apertures
mfor: d
m=w
m=λ/2r
m, wherein λ is wavelength, r
mfor the center radius of this endless belt.
The multiple apertures 3 on light tight multilayer film 2 are arranged in the embodiment of the present invention, it is the aperture arranged on light tight multilayer film 2 thickness direction, and described multiple aperture 3 runs through described light tight multilayer film 2, therefore, when this photon screen is penetrated in illumination, light can by the multiple apertures 3 on light tight multilayer film 2 through, more finally to focus on or imaging through light-transmissive substrates 1.Because described light tight multilayer film 2 comprises multilayer metal film alternately and deielectric-coating, therefore, when described in light therethrough during multiple aperture 3, the surface plasma body polarization of described metal film and deielectric-coating and surface plasma coupling will reach optical field and strengthen, and then the transmittance of light can be improved, the final diffraction efficiency improving photon screen.
Embodiment two
Describe photon screen provided by the present invention above in detail, introduce the method for making of photon screen below.
With reference to the schematic flow sheet that figure 3, Fig. 3 is photon screen method for making provided by the present invention, the method specifically comprises the steps:
Step S1: polished and cleaned is carried out to light-transmissive substrates.
First choose a light-transmissive substrates, and polished and cleaned is carried out to described light-transmissive substrates.This light-transmissive substrates elects quartz substrate as, and the thickness of quartz substrate is 1.5mm, and diameter is 25.4mm, and this light-transmissive substrates transmitance under the irradiation of application wavelength 405nm is greater than 85%.After carrying out polished and cleaned to light-transmissive substrates, make the roughness of light-transmissive substrates be less than 0.5nm, flatness is less than 1 μm.
Step S2: form metal film alternately and deielectric-coating in described light-transmissive substrates, thus light tight multilayer film is formed in described light-transmissive substrates.
By magnetically controlled sputter method sputtering metal membrane and deielectric-coating successively in described light-transmissive substrates in the present embodiment, that is: make metal film and deielectric-coating alternately, certainly, the method forming metal film and deielectric-coating is not limited to magnetically controlled sputter method.Described metal membrane material is Ag, and described deielectric-coating material is Al
2o
3, and make metal film and deielectric-coating be respectively five layers, make the thickness of each metal film and each deielectric-coating be 30nm by controlling sputtering time.
After light-transmissive substrates is formed metal film alternately and deielectric-coating, namely light tight multilayer film is defined, compared to single-layer metal film of the prior art, the present invention by forming light tight multilayer film in light-transmissive substrates, thus when this photon screen is penetrated in illumination, the surface plasma body polarization of metal film and deielectric-coating and surface plasma coupling can be made to reach optical field strengthen, thus the transmitance of light can be improved, and then improve the diffraction efficiency of photon screen.
By being arranged so that everybody reason of five layers of the number of plies of metal film and deielectric-coating is in the present embodiment: the number of plies of metal film and deielectric-coating is less than five layers, and the transmitance of light is lower, will not reach the object strengthening photon screen diffraction efficiency; And if the number of plies of metal film and deielectric-coating is more than five layers, then the growth of photon screen diffraction efficiency will be very not obvious, and the number of plies is more, and manufacture craft difficulty is larger, therefore, preferably embodiment be arrange metal film and deielectric-coating the number of plies everybody five layers.
Step S3: the multiple apertures forming the distribution of multiple ring-band shape in described light tight multilayer film, and the multiple apertures on each endless belt do not overlap each other.
This step can comprise again following several step:
Step S31: spin coating electron sensitive resist on described light tight multilayer film.
Electron sensitive resist used in the present embodiment is ZEP520A electron sensitive resist.
Step S32: under the blocking of mask plate with the multiple little sectional hole patterns that multiple ring-band shape distributes, adopt electron sensitive resist described in electron beam irradiation, the multiple apertures on described mask plate on each endless belt are all not overlapping each other.
, by means of pre-designed mask plate (or claiming photon screen domain), electron beam exposure is carried out to described electron sensitive resist in this step.The shape of described pre-designed mask plate is identical with the shape of light-transmissive substrates, and this mask plate is provided with a lot of circular aperture, and these apertures are distributed on multiple endless belt, and the center radius r of each endless belt
m, endless belt width w
mmeet following relation:
r
m 2＝2mfλ+m
2λ
2，
w
m＝λ/2r
m，
Wherein, m is positive integer, and f is focal length 1 μm, and λ is wavelength 405nm.
Multiple apertures of arbitrary endless belt all become stochastic distribution state, that is: the spacing on same endless belt between adjacent apertures does not limit, but multiple apertures on same endless belt are all not overlapping each other, and diameter is all equal and equal the width of its place endless belt, therefore, being distributed in width is w
mendless belt on the diameter d of multiple apertures
mfor: d
m=w
m=λ/2r
m, wherein λ is wavelength, r
mfor the center radius of this endless belt.
Described pre-designed mask plate is made to block on electron sensitive resist, adopt mask plate described in electron beam irradiation simultaneously, owing to described mask plate being provided with the aperture of multiple distribution in ring-band shape, therefore, electron beam is radiated on described electron sensitive resist through described multiple aperture, thus makes electron sensitive resist corresponding below described multiple aperture and described electron beam phase reaction.
Step S33: the electron sensitive resist after adopting electron beam irradiation is developed, form multiple apertures of multiple ring-band shape distribution in described electron sensitive resist.
Electron sensitive resist after adopting electron beam irradiation is developed, because the electron sensitive resist at aperture position place multiple on mask plate corresponding on electron sensitive resist and described electron beam there occurs reaction, therefore electron sensitive resist will be eliminated in these regions after having developed, thus multiple aperture is defined on described electron sensitive resist, and these apertures become ring-band shape to distribute, multiple apertures on arbitrary endless belt are all not overlapping each other, and diameter is all equal and equal the width of its place endless belt, the center radius r of each endless belt
m, endless belt width w
mmeet following relation:
r
m 2＝2mfλ+m
2λ
2，
w
m＝λ/2r
m，
Wherein, m is positive integer, and f is focal length 1 μm, and λ is wavelength 405nm.
Step S34: for mask, described light tight multilayer film is etched with the described electron sensitive resist with multiple apertures of multiple ring-band shape distribution, form multiple apertures of multiple ring-band shape distribution in described light tight multilayer film.
With the electron sensitive resist of gained after development in step S33 for mask adopts dry etch process to etch light tight multilayer film, thus in described light tight multilayer film, form multiple apertures of multiple ring-band shape distribution.
Dry etch process is adopted in this step, with the electron sensitive resist of gained after development in step S33 (described electron sensitive resist having the aperture of multiple distribution in ring-band shape) for mask etches light tight multilayer film, after having etched by the Graphic transitions in electron sensitive resist in light tight multilayer film, therefore in described light tight multilayer film, multiple aperture is defined, and these multiple apertures become ring-band shape to distribute, on each endless belt, the diameter of aperture is all equal with the width of its place endless belt, and the width w of these endless belt
mand endless belt center radius r
mmeet following relation:
r
m 2＝2mfλ+m
2λ
2，
w
m＝λ/2r
m，
Wherein, m is positive integer, and f is focal length 1 μm, and λ is wavelength 405nm.
After etching technics completes, remove the electron sensitive resist on light tight multilayer film, complete the making of photon screen.Carry out sem test to made photon screen, acquired results is shown in Fig. 4, and as seen from Figure 4, the multiple apertures on photon screen become ring-band shape to distribute, and hole diameter on central belt is maximum, and more to edge, hole diameter is less.
In order to prove to adopt the photon screen in the photon screen hinge structure made by the present invention to have good diffraction efficiency, the photon screen made the photon screen made by the present invention and employing conventional monolayers metallic film especially carries out focus characteristics emulation testing, acquired results is shown in Fig. 5 and Fig. 6, the focus characteristics analogous diagram of the photon screen that Fig. 5 and Fig. 6 is respectively photon screen made by the present invention and adopts traditional handicraft to be formed.As can be seen from Fig. 5 and Fig. 6, under the irradiation of the same focal length with identical wavelength incident light, the photon screen made by the present invention not only diffraction efficiency is higher, and has higher resolution and sharpness.
In summary, photon screen provided by the present invention, relative to traditional photon sieve structure, metal multilayer film and deielectric-coating is utilized to instead of single metallic film, at metal film and deielectric-coating interface, there is special subwavelength optics characteristic, utilize the surface plasma body polarization of metallic film and dielectric film and surface plasma coupling to reach optical field enhancing and effectively promote transmitance, thus improve the diffraction efficiency of photon screen.
In addition, photon screen provided by the present invention, relative to common zone plate structure, on it, the printing opacity aperture of stochastic distribution makes mutually to interfere enhancing between diffraction light, thus can suppressed sidelobes effect and Advanced Diffraction effectively, improve resolution, obtain more sharp keen focal spot.
Emphasize particularly on different fields a little to the description of photon screen and preparation method thereof in the embodiment of the present invention, be correlated with, similarity can reference mutually.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a photon screen, is characterized in that, comprising:
Light-transmissive substrates;
Be positioned at the light tight multilayer film in described light-transmissive substrates, described light tight multilayer film comprises the metal film and deielectric-coating that arrange between multi-layer phase, and described deielectric-coating material is silicon dioxide, alundum (Al2O3), hafnium oxide or zirconium dioxide;
Be arranged on the multiple apertures distributed on described light tight multilayer film, in multiple ring-band shape, the multiple aperture stochastic distribution on each endless belt and not overlapping each other.
2. photon screen according to claim 1, is characterized in that, described endless belt center radius is: r
m 2=2mf λ+m
2λ
2; Wherein, m is positive integer, and f is focal length, and λ is wavelength.
3. photon screen according to claim 2, is characterized in that, the diameter of the multiple apertures on each endless belt is all identical, and is: d
m=λ/2r
m, wherein λ is wavelength.
4. photon screen according to claim 1, is characterized in that, described metal film and deielectric-coating are five layers.
5. photon screen according to claim 4, is characterized in that, the thickness of every layer of metal film and deielectric-coating is 30nm.
6. photon screen according to claim 1, is characterized in that, described metal membrane material is silver.
7. the photon screen according to any one of claim 1 ~ 6, is characterized in that, described light-transmissive substrates is fused quartz, simple glass or organic glass.
8. a photon screen method for making, is characterized in that, comprising:
Polished and cleaned is carried out to light-transmissive substrates;
Described light-transmissive substrates is formed metal film alternately and deielectric-coating, thus form light tight multilayer film in described light-transmissive substrates, wherein, described deielectric-coating material is silicon dioxide, alundum (Al2O3), hafnium oxide or zirconium dioxide;
In described light tight multilayer film, form multiple apertures of multiple ring-band shape distribution, and the multiple apertures on each endless belt do not overlap each other.
9. method according to claim 8, is characterized in that, forms multiple apertures of multiple ring-band shape distribution, specifically comprise in described light tight multilayer film:
Spin coating electron sensitive resist on described light tight multilayer film;
Under the blocking of mask plate with the multiple little sectional hole patterns that multiple ring-band shape distributes, adopt electron sensitive resist described in electron beam irradiation, the multiple apertures on described mask plate on each endless belt are all not overlapping each other;
Electron sensitive resist after adopting electron beam irradiation is developed, in described electron sensitive resist, forms multiple apertures of multiple ring-band shape distribution;
For mask, described light tight multilayer film is etched with the described electron sensitive resist with multiple apertures of multiple ring-band shape distribution, in described light tight multilayer film, form multiple apertures of multiple ring-band shape distribution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110286868.9A CN103018808B (en) | 2011-09-23 | 2011-09-23 | Photon sieve and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110286868.9A CN103018808B (en) | 2011-09-23 | 2011-09-23 | Photon sieve and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103018808A CN103018808A (en) | 2013-04-03 |
| CN103018808B true CN103018808B (en) | 2015-05-13 |
Family
ID=47967619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110286868.9A Active CN103018808B (en) | 2011-09-23 | 2011-09-23 | Photon sieve and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103018808B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105137513B (en) * | 2015-09-23 | 2018-06-26 | 苏州大学 | A kind of broadband photon sieve of phase coding |
| CN106054297A (en) * | 2016-08-01 | 2016-10-26 | 苏州大学 | Large field diffraction photon sieve |
| CN107515470B (en) * | 2017-09-28 | 2020-02-11 | 上海霖迈实业有限公司 | Method for generating elliptical vortex optical rotation by amplitude modulation device |
| CN110441849B (en) * | 2019-08-27 | 2021-08-17 | 中南大学 | Construction method of fractional fractal photon sieve and photon sieve manufactured by same |
| CN111579098A (en) * | 2020-06-19 | 2020-08-25 | 中国科学院上海光学精密机械研究所 | Focal plane Hartmann wavefront sensor based on large-caliber photon sieve |
| CN114994930B (en) * | 2022-06-13 | 2024-01-19 | 中国计量大学 | Vortex light beam generator based on multi-circle spiral nano groove structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272332A (en) * | 1990-04-11 | 1993-12-21 | American Optical Corporation | Laser discrimination device |
| CN101630027A (en) * | 2009-08-20 | 2010-01-20 | 中国科学院微电子研究所 | Large-aperture imaging photon sieve and production method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1262764B1 (en) * | 2001-05-25 | 2007-04-11 | Corning Incorporated | Method for the detection of reactions and metabolic changes with temperature-sensitive fluorescent material |
-
2011
- 2011-09-23 CN CN201110286868.9A patent/CN103018808B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272332A (en) * | 1990-04-11 | 1993-12-21 | American Optical Corporation | Laser discrimination device |
| CN101630027A (en) * | 2009-08-20 | 2010-01-20 | 中国科学院微电子研究所 | Large-aperture imaging photon sieve and production method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 光子筛的超分辨率聚焦特性研究;李亚文 等;《光电工程》;20090331;第36卷(第3期);第130-134页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103018808A (en) | 2013-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103018808B (en) | Photon sieve and manufacturing method thereof | |
| US8691476B2 (en) | EUV mask and method for forming the same | |
| WO2013031863A1 (en) | Reflective mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank | |
| TWI431407B (en) | Fabrication method of photomask-blank | |
| JP6690814B2 (en) | Film mask, method for manufacturing the same, and pattern forming method using the same | |
| KR20100076707A (en) | Photomask for extreme ultraviolet lithography and method for fabricating the same | |
| CN102096334B (en) | Super-diffraction imaging device for improving resolution based on phase shifting principle and manufacturing method thereof | |
| WO2015033539A1 (en) | Reflective photomask and production method therefor | |
| JP2017016102A (en) | Reflective photomask and reflection-type mask blank | |
| JPH05265186A (en) | Self-aligned phase shift mask and its production | |
| TW201028791A (en) | Substrate with multilayer reflection film, reflective mask blank and method for manufacturing reflective mask blank | |
| JP2012054412A (en) | Reflective mask with light blocking region, reflective mask blank, method of manufacturing reflective mask | |
| CN1154879C (en) | Phase shift mask and method for fabricating same | |
| CN102096316A (en) | Method for improving super-diffraction lithographic resolution and lithographic quality by utilizing island-type structure mask | |
| CN101794070A (en) | Device for reducing projection super-resolution imaging and photoetching method | |
| US9529249B2 (en) | Extreme ultraviolet lithography process and mask | |
| CN103163726A (en) | Method for manufacturing chromium sidewall attenuation type phase-shifting mask used in extreme ultra-violet lithography | |
| JP2009186863A5 (en) | ||
| JPH02211450A (en) | Phase shift mask and its manufacture | |
| JP2008055665A (en) | Method for producing transferring mold and method for producing substrate with unevenness | |
| JP5767140B2 (en) | Photomask, pattern transfer method, and pellicle | |
| CN106094084A (en) | Multiplayer films in EUV reflective single diffraction order grating | |
| TWI652543B (en) | Method for manufacturing the photomask | |
| CN112034674A (en) | Method for preparing phase shift mask | |
| TW202143296A (en) | Mask for extreme ultravioletphotolithography and methods of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |