CN103018563A - Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal - Google Patents
Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal Download PDFInfo
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- CN103018563A CN103018563A CN2012105341499A CN201210534149A CN103018563A CN 103018563 A CN103018563 A CN 103018563A CN 2012105341499 A CN2012105341499 A CN 2012105341499A CN 201210534149 A CN201210534149 A CN 201210534149A CN 103018563 A CN103018563 A CN 103018563A
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Abstract
The invention relates to a method for testing indium tin oxide (ITO) sheet resistance of an ITO membrane coated by metal, belongs to the field of touch panel technology research, and particularly relates to exploration of the method for testing ITO in membranes coated by metal. The method includes: a metal layer is etched away by selective metal etching liquid, an ITO layer is left, the ITO sheet resistance of a material is tested and compares with the ITO sheet resistance provided by a raw material manufacturer, and whether the ITO sheet resistance of the ITO membrane coated by metal meets standard requirements is determined. Quality reliability of a raw material is guaranteed.
Description
Technical field
The present invention relates to cover the method for testing of metal ITO film ITO sheet resistance, belong to contact panel technical research field, the method for testing of espespecially covering the ITO in the metal membrane material is probed into.
Background technology
The starting material of at present touch-screen industry use have the metal of covering ITO conducting film, and structure is sputter ITO transparent conductive material on PET or the glass baseplate, spatters the metal materials such as nickel plated copper again, to increase the electric conductivity of finished product contact panel frame lead-in wire.But the ITO in the raw material can't directly measure sheet resistance because below metal level.
The present invention etches away metal level with metal selective etching liquid, stays the ITO layer, and the ITO sheet resistance of test material bottom again is to guarantee raw-material reliability.
Summary of the invention
Technical purpose: the present invention will provide the method for testing of covering metal ITO film ITO sheet resistance, solves to cover the method for testing of ITO sheet resistance in the raw metal, thereby guarantees raw-material reliability.
Technical scheme: the method for testing of metal ITO film sheet resistance is openly covered in the present invention, comprises the steps:
Step 1: get be of moderate size cover metal ITO membrane sample;
Step 2: select suitable metal selective etching liquid;
Step 3: sample is dropped in this etching solution, etch away metal level, stay the ITO layer;
Step 4: take out the above-mentioned ITO film behind the metal level that etches away, measure 9 sheet resistances of ITO behind the washing and drying;
Step 5: compare with the ITO sheet resistance that starting material producer provides.
Beneficial effect: the invention discloses the method for testing of covering metal ITO film ITO sheet resistance, can judge the sheet resistance size of covering metal ITO film ITO layer by the method, thereby judge raw-material reliability.
Description of drawings
Fig. 1: cover metal ITO film sectional view; Fig. 2: etch away ITO film sectional view behind the metal level;
The simple symbol explanation
1, base material; 2, ITO layer; 3, metal level.
Embodiment
The below is that specific embodiments of the invention further describe:
The method of testing of metal ITO film ITO sheet resistance is openly covered in the present invention, comprises the steps:
Step 1: get be of moderate size cover metal ITO membrane sample;
Step 2: select suitable metal selective etching liquid;
Step 3: sample is dropped in this etching solution, etch away metal level, stay the ITO layer;
Step 4: take out the above-mentioned ITO film behind the metal level that etches away, measure 9 sheet resistances of ITO behind the washing and drying;
Step 5: compare with the ITO sheet resistance that starting material producer provides.
Embodiment:
Step 1: get a slice and cover metal (Cu-Ni) ITO film, such as Fig. 1;
Step 2: with the production line of tape-stripping to volume to volume gold-tinted technique;
Step 3: with metal selective etching liquid copper nickel metal layer 3 is etched away, stay ITO layer 2;
Step 4: take out the above-mentioned ITO film behind the metal level that etches away, such as Fig. 2,9 sheet resistance values measuring ITO with the sheet resistance instrument behind the washing and drying are:
158、162、157、157、159、157、154、154、153（Ω/□）；
Step 5: compare with the ITO sheet resistance that starting material producer provides: (former emblem mark standard 150 ± 30 Ω/),
9 sheet resistance values of the former ITO of factory test are 146,152,150,152,155,160,153,155,155(Ω/);
Contrast step 4 and step 5, both test results are close, illustrate to cover metal ITO film ITO sheet resistance in the standard-required scope, and the starting material sheet resistance satisfies request for utilization, and is qualified.
Claims (3)
1. cover the method for testing of metal ITO film ITO sheet resistance, its feature comprises the steps:
Step 1: get be of moderate size cover metal ITO membrane sample;
Step 2: select suitable metal selective etching liquid;
Step 3: sample is dropped in this etching solution, etch away metal level, stay the ITO layer;
Step 4: take out the above-mentioned ITO film behind the metal level that etches away, measure 9 sheet resistances of ITO behind the washing and drying;
Step 5: compare with the ITO sheet resistance that starting material producer provides.
2. the method for testing of covering metal ITO film ITO sheet resistance as claimed in claim 1 is characterized in that:
Select suitable metal selective etching liquid in the step 2, this etching solution etching metal, not etching ITO namely etches away metal level, stays the ITO layer.
3. the method for testing of covering metal ITO film ITO sheet resistance as claimed in claim 1 is characterized in that:
Step 4 test result and step 5 ITO sheet resistance are compared, and judge whether cover metal ITO film ITO sheet resistance meets standard-required.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105341499A CN103018563A (en) | 2012-12-12 | 2012-12-12 | Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105341499A CN103018563A (en) | 2012-12-12 | 2012-12-12 | Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103018563A true CN103018563A (en) | 2013-04-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105341499A Pending CN103018563A (en) | 2012-12-12 | 2012-12-12 | Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal |
Country Status (1)
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| CN (1) | CN103018563A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605445A (en) * | 2013-12-09 | 2014-02-26 | 山东华芯富创电子科技有限公司 | Method for measuring wire resistance of ITO (indium tin oxide) circuit |
| CN110568263A (en) * | 2019-08-06 | 2019-12-13 | 北京航空航天大学 | Multi-parameter detection method and device for conductor with metal coating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10141980A1 (en) * | 2001-08-28 | 2003-03-20 | Hermann Barth | Method for testing electric breakdown strength of intermediate insulting layers material e.g. for basic material of printed circuits, testing takes place on moved band of material in dashed-line test zone |
| CN101812688A (en) * | 2009-02-19 | 2010-08-25 | 比亚迪股份有限公司 | Etching solution and etching method |
| CN101931023A (en) * | 2009-06-26 | 2010-12-29 | 比亚迪股份有限公司 | Crystalline silicon solar cell manufacturing method |
-
2012
- 2012-12-12 CN CN2012105341499A patent/CN103018563A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10141980A1 (en) * | 2001-08-28 | 2003-03-20 | Hermann Barth | Method for testing electric breakdown strength of intermediate insulting layers material e.g. for basic material of printed circuits, testing takes place on moved band of material in dashed-line test zone |
| CN101812688A (en) * | 2009-02-19 | 2010-08-25 | 比亚迪股份有限公司 | Etching solution and etching method |
| CN101931023A (en) * | 2009-06-26 | 2010-12-29 | 比亚迪股份有限公司 | Crystalline silicon solar cell manufacturing method |
Non-Patent Citations (2)
| Title |
|---|
| 占红明等: "基于有机电致发光显示的透明导电膜ITO", 《液晶与显示》 * |
| 谢鸿波: "方块电阻测试仪的智能化方案", 《真空》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605445A (en) * | 2013-12-09 | 2014-02-26 | 山东华芯富创电子科技有限公司 | Method for measuring wire resistance of ITO (indium tin oxide) circuit |
| CN103605445B (en) * | 2013-12-09 | 2016-06-29 | 山东华芯富创电子科技有限公司 | The measuring method of ITO circuit line resistance |
| CN110568263A (en) * | 2019-08-06 | 2019-12-13 | 北京航空航天大学 | Multi-parameter detection method and device for conductor with metal coating |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20130403 |