CN103014679A

CN103014679A - System for carrying out silicon thin-film plating by using carrier jacking chip-delivering technology

Info

Publication number: CN103014679A
Application number: CN2011102840541A
Authority: CN
Inventors: 戴嘉男; 刘幼海; 刘吉人
Original assignee: Jifu New Energy Technology Shanghai Co Ltd
Current assignee: Jifu New Energy Technology Shanghai Co Ltd
Priority date: 2011-09-23
Filing date: 2011-09-23
Publication date: 2013-04-03

Abstract

The invention relates to a system for carrying out silicon thin-film plating by using a carrier jacking chip-delivering technology. The system comprises an access end, a carrier jack, a vacuuming chamber, and a P.I.N-type process chamber. A transmission wheel shaft and a vacuum pump are arranged in the chambers. A heater, a showerhead and an RF are arranged in the process chamber. According to the invention, the carrier jack is arranged at the access end. The transmission wheel shaft is arranged at the access end. A pin is provided at the carrier, and fixtures for fixing glass are arranged on the periphery of the carrier. A robot fetches TCO glass from a trolley and delivers the glass to an inlet end; the carrier at the inlet end plane jacks the pin, such that robot delivers the glass onto the carrier, and the TCO glass is supported by the pin; the robot leaves the inlet end, the pin is lowered, and the glass is placed onto the carrier; the fixtures of the carrier move and press on the glass, such that the glass is embedded into the carrier; the carrier then delivers the glass into the vacuuming chamber and the P.I.N-type process; when the process is finished, the glass is fetched in reverse direction, such that silicon thin-film plating is finished. According to the invention, glass is embedded into the carrier, such that warping caused by heating is prevented, and uniform temperature can be achieved by conduction and radiation. Therefore, film heating uniformity and silicon thin-film battery efficiency can be improved.

Description

Use the Carrier jacking to pass chip technology to carry out the silicon film plated film

Technical field

Present method is the biography chip technology with the technological core PECVD in the thin film solar, when TCO glass prepares to pass sheet to the PECVD cavity the time from atmosphere, utilize the jacking technology of carrying platform Carrier, allow TCO glass inlay first Carrier inner, and along with driving to, Carrier carries out plated film in the PECVD, main cause be when glass when carrying out silicon film, need quite evenly and stably to carry out under the hot environment, if glass only depends on cavity heating itself, probably can cause temperature uneven, admittedly the Carrier with special construction is bumped into glass interior, can so that glass itself except can the radiant heat by cavity heating, also can be increased by the heat by conduction that Carrier provides rate of heating and evenly plating, can allow the glass be under the equal temperature state before processing procedure, when at plated film, can obtain uniform silicon film TCO is on glass, can improve the stability of solar power silicon film.

Background technology

At present; industry is for existing many research in the thin-film solar cells; special design is also arranged when making core PECVD; mainly be horizontal and vertical type is main; in the middle of in the industry cycle with the normal board module that uses of academia, be in the majority with horizontal design, and I haven't seen you for ages in horizontal design glass size is amplified; mainly be because the glass of horizontal type structure glass when heating has heating inequality or heating often easily has the situation of warpage in the majority, but but still solution should be arranged.The present invention mainly will allow TCO glass be placed on the Carrier on plane exactly, can improve glass by the Carrier material and pine for reaching samming adding, therefore be provided with a Carrier at inlet end, when Robot gripping TCO glass is prepared to be passed to inlet end, the plane Carrier of its inlet end can begin to do the pin jacking, so that glass can be put into the pin upper end, subsequently after Robot leaves inlet end, its pin descends, monoblock TCO glass is lain on the Carrier, and then there is tool that glass is completely fixed around on Carrier four limits, make from the appearance for glass is bumped in the Carrier, passing subsequently sheet enters into and carries out the silicon film processing procedure in the vacuum cavity again, this invention can be removed the glass heats inequality of horizontal PECVD normal generation in processing procedure and the problem of glass warpage, also can allow glass processing procedure silicon film under the most uniform temperature, enable to improve the uniform and stable property of solar energy film plated film.

Summary of the invention

Main purpose of the present invention is to use the Carrier jacking to pass chip technology to carry out the silicon film plated film.Its system mainly comprises inlet end, inlet end Carrier jacking, vacuumizes the chamber, P.I.N N-type semiconductorN processing procedure chamber, exit end.In each cavity, be provided with power axle and vacuum Pump, and heating unit, Showerhead airflow hole and RF electrode are then arranged in the processing procedure chamber, to carry out processing procedure.Carrier jacking technology of the present invention then is to be erected at inlet end and exit end place, and its inlet/outlet end all is provided with the pin device on its Carrier except power axle is arranged, and Carrier also is provided with tool all around, in order to can fix glass.When Robot with the gripping out time the from the chassis of TCO glass, and before preparing to deliver to inlet end, the plane Carrier of its inlet end namely can be with the pin jacking, and allow Robot can send the pin of TCO glass to the Carrier, remove to support TCO glass by pin, subsequently after Robot leaves inlet end, its pin then begins to descend, TCO glass is lain against the Carrier top, after finishing, the tool around its Carrier then begins mobile, be pressed in glass around on, then similarly be that glass is bumped on the Carrier this moment from the appearance, this Carrier can be passed to after finishing and vacuumize in the chamber, and carry out subsequently P.I.N N-type semiconductorN processing procedure, after finishing processing procedure, Carrier passes to exit end, this moment, its tool can begin mobilely equally, make tool leave glass behind the plated film, and pin also began jacking at this moment, to the appropriate location, Robot gets sheet again and namely finishes to chassis subsequently with glass roof.The main purpose of this invention is bumped into glass in Carrier exactly, produce warpage in the time of can not being subject to heating and can be just when processing procedure reach even temperature effect by heat by conduction and radiant heat, so can improve rete homogeneous heating degree, then can improve solar power silicon hull cell efficient.

Embodiment

Hereby the present invention is cooperated accompanying drawing, shown in being described in detail as follows: see also the 1st figure, for using the Carrier jacking, the present invention passes chip technology to carry out silicon film plated film schema, by among the figure as can be known, when Robot gets TCO glass to inlet end from chassis, then the Carrier of inlet end begins to do the pin jacking, then glass is placed on after the pin upper end, its Robot namely leaves inlet end, the pin of Carrier drops on the carrier of plane subsequently, and the tool around its Carrier can be fixed glass, make its similar effect that is bumped into, glass reaches and vacuumizes the chamber subsequently, P.I.N manufacture of semiconductor chamber, arrive again in the cooling vacuum breaker chamber after finishing processing procedure, finish afterwards glass after its Carrier tool of exit end can move away plated film, and pin can allow Robot get sheet once again jacking of glass and go out, and namely finish this invention, and the glass behind the processing procedure also can be even shape.

See also the 2nd figure; this passes chip technology to carry out the Carrier schematic diagram of silicon film plated film for the present invention uses the Carrier jacking; by learning among the figure; Carrier 1 is plane; be inserted in the Carrier and have 9 pin 2; its pin can carry out jacking or down maneuver by the dataphone interface; tool 3 is then arranged around Carrier; its tool is understood packaged type equally; it moves equally is to be controlled by the dataphone interface; therefore when glass will pass sheet, the pin on its Carrier and tool namely can begin start, and protection TCO glass is not damaged.

See also the 3rd figure, this is for using the Carrier jacking to pass chip technology to carry out the inlet end schematic diagram of silicon film plated film, by learning among the figure, when Robot 4 gets TCO glass 5 to inlet end, pin 2 on its Carrier 1 can begin jacking, subsequently after glass is positioned on the pin, Robot leaves inlet end, and tool 3 begins the mobile TCO glass of fixing, Carrier can be positioned over roller 6 tops subsequently, and it is fixing that whole inlet end then is provided with bracing frame 7, inlet end is difficult for mobile, after Carrier can first do position correction by Sensor 8, namely begin to pass sheet and enter to vacuumize in the chamber and vacuumize.

See also the 4th figure, this is for using the Carrier jacking to pass chip technology to carry out the schematic diagram that vacuumizes of silicon film plated film, after Slit valve 9 opens, its Carrier 1 namely begins to pass sheet to vacuumizing in the cavity, and can see that tool 3 is to be completely fixed TCO glass, and begun to vacuumize by Pump 10, after vacuum values reached base pressure, its glass began to pass sheet to P.I.N N-type semiconductorN processing procedure chamber.

See also the 5th figure, this is for using the Carrier jacking to pass chip technology to carry out the P.I.N N-type semiconductorN schematic diagram of silicon film plated film, by among the figure as can be known, when TCO glass 5 is placed on Carrier 1 when interior, its glass can be by the effect that adds the radiant heat pined for and heat by conduction and reach samming, and because the fixing of tool 3 arranged, allow glass be difficult for warpage, this moment, gas was begun to flow in the Showerhead 11 by airflow hole 12, and can be diffused into whole processing procedure chamber, and carry out pressure control by computer interfaceJi Suanjijiekou, after pressure-stabilisation, carry out processing procedure by RF power supply 13 unlatchings, after processing procedure was finished, its glass passed sheet to vacuum breaker chamber and the exit end of lowering the temperature by Slit valve 9 again.

See also the 6th figure, this is for using the Carrier jacking to pass chip technology to carry out the vacuum breaker chamber schematic diagram of silicon film plated film, by learning among the figure, glass 5 behind the plated film is still in Carrier 1, and can position correction by Sensor 8, be subsequently vacuum breaker to atmosphere, and finish this processing procedure.

See also the 7th figure, this is for using the Carrier jacking to pass chip technology to carry out the exit end schematic diagram of silicon film plated film, by learning among the figure, when the glass 5 behind the plated film was placed on exit end, its tool 3 can be mobile away from glass behind the plated film once again, subsequently its pin 2 once again jackings of meeting, glass leaves Carrier 1 after making plated film, and Robot 4 can enter into exit end glass is taken out subsequently, and complete this processing procedure of finishing, except can keeping the glass samming, also can improve bulk silicon hull cell efficient

Above explanation; just illustrative for the purpose of the present invention; nonrestrictive; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits; can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention, the below is that the present invention is further described in conjunction with the accompanying drawings and embodiments: [The first figure is the present invention's motion flow schematic diagram; The second figure is the present invention's Carrier schematic diagram; The 3rd figure is the present invention's inlet end schematic diagram; The 4th figure be the present invention vacuumize the cavity schematic diagram; The 5th figure is the present invention's P.I.N N-type semiconductorN thin film manufacture process chamber schematic diagram; The 6th figure is the present invention's cooling vacuum breaker chamber schematic diagram; The 7th figure is the present invention's exit end schematic diagram, main element nomenclature: 1 ... Carrier2 ... pin bracing frame 3 ... tool 4 ... Robot5 ... glass 6 ... roller 7 ... anchor 8 ... Sensor9 ... Slit valve10 ... Pump11 bleeds ... Showerhead12 ... airflow hole 13 ... RF power supply.

Claims

1. one kind is used the Carrier jacking to pass chip technology carrying out the silicon film plated film, and its system mainly comprises inlet end, inlet end Carrier jacking, vacuumizes the chamber, P.I.N N-type semiconductorN processing procedure chamber, exit end; In each cavity, be provided with power axle and vacuum Pump, and heating unit, Showerhead airflow hole and RF electrode are then arranged in the processing procedure chamber, to carry out processing procedure; Carrier jacking technology of the present invention then is to be erected at inlet end and exit end place, its inlet/outlet end is except having power axle, all be provided with the pin device on its Carrier, and Carrier also is provided with tool all around, in order to can fix glass, when Robot with the gripping out time the from the chassis of TCO glass, and before preparing to deliver to inlet end, the plane Carrier of its inlet end namely can be with the pin jacking, and allow Robot can send the pin of TCO glass to the Carrier, remove to support TCO glass by pin, subsequently after Robot leaves inlet end, its pin then begins to descend, TCO glass is lain against the Carrier top, after finishing, tool around its Carrier then begins mobile, be pressed in glass around on, then similarly be that glass is bumped on the Carrier this moment from the appearance, this Carrier can be passed to after finishing and vacuumize in the chamber, and carry out subsequently P.I.N N-type semiconductorN processing procedure, after finishing processing procedure, Carrier passes to exit end, this moment, its tool can begin mobile equally, make tool leave glass behind the plated film, and pin also begins jacking at this moment, and to the appropriate location, Robot gets sheet again and namely finishes to chassis subsequently with glass roof, the main purpose of this invention is bumped into glass in Carrier exactly, produce warpage in the time of can not being subject to heating and can be just when processing procedure reach even temperature effect by heat by conduction and radiant heat, so can promote rete homogeneous heating degree, then can promote solar power silicon hull cell efficient.

2. a kind of use Carrier jacking according to claim 1 passes chip technology to carry out the silicon film plated film, wherein be provided with the pin that can rise and press down at Carrier, and can make portable tool, these two kinds of inventions can allow glass enter into PECVD can do uniform heating before, and also can not cause glass to have the situation of distortion warpage to occur because of large-sized relation.

3. a kind of use Carrier jacking according to claim 1 passes chip technology to carry out the silicon film plated film, wherein all be provided with this Carrier at inlet end and exit end, when this gets sheet and film releasing as Robot, pin on its Carrier can do to rise and presses down and tool can move, do not have the danger that causes the glass fragmentation when allowing Robot get sheet, and can make the complete sheet that picks and places and move.

4. use Carrier jacking according to claim 1 passes chip technology to carry out the silicon film plated film, its heating and vacuum breaker cavity all are provided with the Sensor positioning correcting, can allow the Carrier of bearing glass proofread and correct first the location, can not be subject to the switch of Slit valve and cause having the possibility of pushing Carrier, and cavity all is provided with the switch of vacuum Pump and Vent, the situation of its cavity be can observe by computer interface, can vacuumizing of glass and vacuum breaker action be done according to on-the-spot actual state.

5. use Carrier jacking according to claim 1 passes chip technology to carry out the silicon film plated film; its processing procedure P.I.N N-type semiconductorN; equally also there is Sensor to position correction; and its gas can be taken advantage of a situation and lower shunts to Showerhead from airflow hole; when reaching processing procedure pressure in the cavity; its RF can open and carry out plated film; because glass is under the Carrier on plane protection; therefore be difficult for having the possibility of fragmentation; and because glass is subject to the radiant heat of cavity and the heat by conduction of Carrier; therefore be under the most uniform situation, to carry out during glass coating; therefore can after processing procedure finishes, see the even shape of glass surface Color expression; and thicknesses of layers also can reach even shape, and then improves solar power silicon hull cell efficient.