CN103003467A - Spotless arc directed vapor deposition (SA-DVD) and related method thereof - Google Patents

Spotless arc directed vapor deposition (SA-DVD) and related method thereof Download PDF

Info

Publication number
CN103003467A
CN103003467A CN2011800228084A CN201180022808A CN103003467A CN 103003467 A CN103003467 A CN 103003467A CN 2011800228084 A CN2011800228084 A CN 2011800228084A CN 201180022808 A CN201180022808 A CN 201180022808A CN 103003467 A CN103003467 A CN 103003467A
Authority
CN
China
Prior art keywords
substrate
carrier gas
gas jet
equipment according
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011800228084A
Other languages
Chinese (zh)
Other versions
CN103003467B (en
Inventor
H.N.G.瓦德利
G.马托施
F-H.勒格纳
B.舍费尔
C.梅茨纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
University of Virginia Patent Foundation
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
University of Virginia Patent Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, University of Virginia Patent Foundation filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of CN103003467A publication Critical patent/CN103003467A/en
Application granted granted Critical
Publication of CN103003467B publication Critical patent/CN103003467B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A plasma assisted directed vapor deposition process that utilizes a spotless arc directed vapor deposition (SA-DVD) method for the creation of the plasma in a directed vapor deposition apparatus. Vapor is created by electron or other high intensity directed energy beam evaporation from one or more source materials contained in a water cooled crucible. This vapor is entrained in a transonic helium or other gas jet and transported to a substrate for deposition. The electron or other directed energy beam used for evaporation is simultaneously exploited to ionize the vapor and the jet forming gas (helium, or other gases including combinations of inert and reactant gases). An anode positioned near the electron beam impingement position attracts scattered electrons formed during the directed energy beams interaction with a target surface and enables the formation of an intense plasma. This plasma is at first transported towards the substrate by the vapor entraining gas jet through an ion-drag mechanism. However, if the substrate is sufficiently charged (electrically biased), the plasma ions are electrostatically accelerated towards the substrate and this extra momentum aids in vapor transport and deposition on a component surface.

Description

Without the directed vapour deposition (SA-DVD) of dirty electric arc and methods involving thereof
Related application
The sequence number that is entitled as " Spotless Arc Activated Directed Vapor Deposition Concept and Implementation Thereof " that the application requires to submit on May 6th, 2010 is No. 61/331,844 U.S. Provisional Application and the sequence number that is entitled as " Spotless Arc Activated Directed Vapor Deposition Concept and Implementation Thereof " of submitting on July 22nd, 2010 are No. 61/366, the right of priority of 711 U.S. Provisional Application, the disclosure with above-mentioned U.S. Provisional Application integrally is incorporated herein by reference.
Technical field
Present invention relates in general to from the field of the physical vapor deposition of point-like vapor source.More particularly, the present invention is in the sub-field of the directed vapour deposition of plasmaassisted.
Background technology
Directed vapour deposition (DVD) is a kind of physical vapor deposition (PVD) technique, and it carries rough vacuum electron beam (EB) evaporation and the steam in the flowing gas stream (gas-jet) secretly combination so that one or more evaporation agents are deposited on the substrate effectively.It is a kind of PVD technology that plasma body activates directed vapour deposition (PA-DVD), and it forms technical combinations to allow to produce the coating of controlled composition, structure and unrelieved stress with electron beam and plasma.In the previous embodiment of PA-DVD, produce plasma body by hollow cathode discharge.In this technique, the low voltage electronics that the inert gas jets that is ionized is easily together carried is injected in the zone of seeking the plasma body activation.Injection can occur to become any angle ground with the gas-jet of carrying steam secretly.The coaxial concept that the gas-jet that forms plasma body is alignd with the gas-jet of carrying steam secretly is preferred for many application.
Yet there are several shortcomings in DVD technique by the plasma body activation of hollow cathode discharge.The first, form high-speed jet from the working gas of the plasma source of hollow cathode emission, the axle of this high-speed jet usually and the direction that transports of steam angled.Working gas jet by hollow cathode may be scattered from substrate transport (being low-momentum) slow movement or light steam particle of carrying secretly in the jet at steam, especially when vertically being orientated with the jet that transports steam.The second, this mode need to be used sizable plasma body working gas flow velocity, and it has disadvantageous economic consequences: except gas consumption, it also needs the more powerful carrier gas jet that transports steam, and therefore needs the more air-bleed system of heavy body.The 3rd, hollow-cathode plasma source and supply thereof and control unit are expensive and effort for maintenance.For example, the radiation heater coil is used for starting discharge in existing apparatus.These well heaters stand frequent fault, needing to cause changing.The 4th, well heater and have hollow cathode itself slowly but stable vaporization (because their High Operating Temperature and ionic bombardment) produces pollutent, described pollutent is merged in the layer that deposits.It should be noted that DVD technique since these last four shortcomings of hollow cathode discharge in addition newer hollow cathode discharge and steam are transported in the hollow cathode technology of aliging also effective.
Existence is to the plasma body activated equipment of the improvement that is used for DVD technique and the needs of method, and shortcoming and the exploitation that existing plasma body based on hollow cathode activates scheme is used at a high speed, the new mode of economic and clean deposition in order to eliminate.
Summary of the invention
An aspect of embodiments of the invention provides a kind of plasmaassisted directed gas-phase deposition, and it utilizes without directed vapour deposition (SA-DVD) method of dirty electric arc and produce plasma body in directed vapor deposition apparatus.Produce steam by electronics or the evaporation of other high-strength directional energy-beams by the one or more source materials that are comprised in the water cooling crucible.This steam is entrained in transonic speed helium or other gas-jets and is transported to substrate and is used for deposition.Be used for the electronics of evaporation or other oriented energy bundles and be used simultaneously in the gas that faintly ionizes described steam and form jet (helium, or comprise other gases of the combination of rare gas element and reactant gases).Near the anode that is arranged and is placed on the electron beam impingement position and be connected to power supply attracts the scattered electrons that forms during the interaction on oriented energy bundle and target surface, and makes it possible to form the arc-over towards the surface combustion of the evaporation agent that is used as negative electrode.Arc-over has promoted the plasma body that density is high.At first transport this plasma body by the gas-jet of carrying steam secretly that pulls mechanism by ion towards substrate.Yet if substrate is abundant charged (by electrical bias), plasma ion is accelerated towards substrate static, and this extra momentum helps deposition and steam on parts surface to transport.Because not forming the gas of plasma body is injected in the deposition, therefore this aspect of embodiments of the invention has overcome many plasma bodys with using coaxial hollow cathode to be used for DVD technique and has activated the problem that is associated, and causes producing the auxiliary concept of low cost plasma body.Instead, the carrier gas jet is used for carrying steam plumage (vapor plume) secretly as the part of this technique.
Therefore an aspect of embodiments of the invention has overcome many plasma bodys with using coaxial hollow cathode to be used for DVD technique and has activated the problem that is associated.For example, some in the aspect of some embodiments of the present invention can be with following relevant:
Described arc-over burns in the steam of the material that evaporates and in gas-jet, has avoided thus the additional plasma working gas to have to be released in the sediment chamber.Arc plasma is localized and is alignd with shape and the propagation of steam flow.Like this, the harmful characteristic that directed steam plumage do not occur.
Higher ion volume density, macroion production rate and high ionization degree (about 50% scope) are the characteristics of the method.These are such aspects, these aspects are provided to reach the large rising that must be enough to mate high deposition rate (about 15 μ m/min scopes) and stably move the average energy of the condensation particle that discharges, and no matter the charged particle carrier of when in DVD technique, meeting, being dragged away by gas-jet.
This equipment and method have reduced the complicacy of plasma source, have avoided wearing parts and have eliminated source of pollution, and it causes producing and is easy to safeguard the concept that activates with the low cost plasma body.
The concept of embodiments of the invention also allows steam to be ejected on the big area, and utilizes simultaneously effective plasmaassisted to control coating structure and characteristic.
In a kind of mode, this can for example arrange chaining or array by one group of crucible that will be close to mutually, each is equipped with alone anode or common anode and for generation of the device of the gas-jet that transports steam, and the steam plumage that perhaps scans at least one crucible by the device that utilizes the direction that is used for the control gas-jet is realized.
And, if substrate by pulsed bias, then can be electrostatically attracted and impact substrate surface near the most of positive ions the substrate during the cycle when the base plate strip negative electricity time.Because vapor atomic is contained near the streamline of process substrate and has characteristic velocity (it is controlled by jet flow condition and substrate geometry) along this streamlined motion, the time between the pulse of pulsed bias can be used for controlling ion deposition and where occurs in go the substrate.This is so that realized controlling according to the position on the substrate novel capabilities of thickness, structure, composition and unrelieved stress.It will be general for the vapour deposition field by the point-like vapor source.
An aspect of embodiments of the invention provides a kind of equipment at least one coating being applied at least one substrate.This equipment can comprise: the sediment chamber; At least one evaporation agent source; Be used for clashing at least one high energy beam that described at least one evaporation agent source forms the steam plumage; At least one anode, it is used for forming arc-over between described at least one anode and described at least one evaporation agent source near being placed on the evaporation agent source; Be used for the steam plumage towards horizontal limited at least one carrier gas that transports of substrate with at least one jet of formation.
An aspect of embodiments of the invention provides a kind of method at least one coating being applied at least one substrate.The method can comprise: described at least one substrate is provided; The sediment chamber is provided; At least one evaporation agent source is provided; Utilize at least one described at least one evaporation agent source of high energy beam bump to produce the steam plumage; Between at least one anode and described at least one evaporation agent source, form arc-over; And launch at least one carrier gas, form at least one jet along the direction of at least basically aliging with the steam plumage and be used for the steam plumage towards horizontal limited the transporting of substrate.
These and other purposes of embodiments of the invention disclosed herein will become more obvious by following description, accompanying drawing and claim together with advantage and the feature of each side.
Description of drawings
When reading with accompanying drawing, aforementioned and other purposes, feature and advantage and the present invention itself of the present invention will be understood more fully by the description of following preferred embodiment.
Fig. 1 is the longitudinal cross-section synoptic diagram without the embodiment of directed vapour deposition (SA-DVD) equipment of dirty electric arc and assembly.
Fig. 2 is the partial schematic diagram (just having single evaporation agent source) without the amplification of the embodiment of directed vapour deposition (SA-DVD) equipment of dirty electric arc and assembly as shown in Figure 1.
Fig. 3 provides constant pressure, and (nitrogen pressure mbar) and be deposited on the diagrammatic representation of the relation between the dynamic stiffness (GPa) of the coating on the substrate, illustrates the advantage that is associated with (High Voltage) DVD embodiment that uses without dirty arc method thus.
Fig. 4 provides when it and relates to the carrier gas that just is being ionized (for example, Ar) or the carrier gas that is not ionized (for example, jet ion current density (mA/cm during He) use 2) the diagrammatic representation of relation between contrast jet flow (slm), this diagrammatic representation confirms that when plasma body is crossed in transonic speed gas-jet ion pulls the existence of phenomenon.Shown in special case research in, utilize Ar to be passed by He or Ar carrier gas jet as the horizontal hollow cathode discharge of the working gas of plasma source.
The impact of pulsed bias illustrated when Fig. 5 was provided at it and relates to coated substrate.
Fig. 6 is provided at illustrating of streamline on the carrier gas jet of atom with steam plumage of carrying secretly and ion.
Fig. 7 is provided for using suitable bias voltage and carrier gas/steam particles mixture with the conformal deposited pattern or applies the illustrating of technology of non-planar surfaces with the trench fill sedimentation model.
The accompanying drawing that is merged in the present description and forms the part of present description illustrates several aspect of the present invention and embodiment, and is used from the description one of this paper and explains principle of the present invention.Accompanying drawing is provided and only is used for the purpose of select embodiment of the present invention being shown and not being interpreted as limiting the present invention.
Embodiment
Turn to now accompanying drawing, an aspect such as the schematically illustrated embodiments of the invention of Fig. 1-2 is method and apparatus 10, be used for utilizing the directed gas-phase deposition of plasmaassisted at least one coating for example to be applied at least one substrate 20(, sample) on.This equipment can comprise that the 30(of sediment chamber has upstream 33 and catchment 35), at least one evaporation agent source 40(for example, ingot or other types), at least one at least one high energy oriented energy (for example electronics) bundle 50 with formation steam plumage 90 that is used for bump evaporation agent source 40, be placed near at least one anode 80 the evaporation agent source 40, be used between anode 80 and evaporation agent source 40, forming the arc-over (not shown), and at least one carrier gas 70, it forms horizontal limited the transporting towards substrate 20 that at least one jet 71 is used for restriction steam plumage 90 and/or plasma body 105, as substantially describing with deshed line 72 among Fig. 1.In the equipment 10 in the included element at least some can comprise " nozzle " 15, and it can participate at least one coating is applied at least one substrate 20.In a kind of mode, anode 80 is placed in the position that raises on the evaporation agent source 40.In another kind of mode, anode 80 is placed on the substrate 20.Substrate 20 can about 0 to approximately+/ be biased during-200 V, perhaps can as required or require to be raised or to reduce.
In a kind of mode, can be by multiple oriented energy device 52, for example in electron beam gun, laser source or this area now or any other oriented energy device of recognizing later on, produce high energy oriented energy bundle 50.In the situation of electron beam gun 52, it can be operated in low vacuum state or be operated with the background pressure (that is, high vacuum state) that reduces.For example, the rough vacuum operational stage can be that still can as required or require was other levels more than about 0.001 holder was held in the palm to 100.Electron beam gun can be approximated to be the 70kV/10kW type, but also not necessarily, because voltage and wattage can as required or require to change.High energy beam 50 can comprise for the device of bundle rum point that changes at least one of evaporation agent source 40.For example, this device can comprise solenoid coil 55 or the deflector coil that can coaxially and/or partly be placed near evaporation agent source 40.Solenoid coil 55 can make high energy beam 50 crooked at least in part.The evaporation agent source can be solid or liquid.
In a kind of mode, solenoid coil 55 can be placed like this and be powered up so that by make electronics along spiral path move (this increased the distance that moves the electron institute and increased thus electronics and evaporation agent or form the probability that ion between the atom of gas-jet forms collision) come the plasma body of enhanced system-formation efficient mechanically.In a kind of mode, solenoid coil 55 can be provided for and improve at least in part plasma density, and promotes to be used for to accelerate the axial potential gradient of positive ion towards substrate 20.
In a kind of mode, the device that is used for emission carrier gas jet 71 can comprise aperture 73, at least one in for example following: pipeline, conduit, pipe, groove, flexible pipe, handle, duct, entrance, groove, path and passage.By the setting of 71 pairs of steam plumages 90 of carrier gas jet with transport at least in part and realize by physics and/or electrostatic interaction between the formation of steam plumage 90 and carrier gas jet 71.In a kind of mode, the momentum of carrier gas is assisted steam plumage transporting towards substrate.And carrier gas jet 71 basically protects anode 80 and does not contact with steam plumage 90, has reduced thus the accumulation of evaporation agent on anode 80.For example, the protection that is provided by the high atomic weight carrier gas has reduced the undesirable accumulation of condensation evaporation agent on anode.Carrier gas jet 71 can be placed with at least basically coaxial with evaporation agent source 40.In a kind of mode, the surface of protection anode avoids undesirable deposition of steam particle and can go out " rinsing gas " that enter catchment 35 from anode 80 inside and provide or improve by flowing through jig drill hole (not shown).Described boring can be so disposed so that rinsing gas helps 90 setting of steam plumage, for example when radially inwardly flowing out from anode 80.
The direction of carrier gas jet 71 and/or intensity can be used for plasma body 105 or described steam plumage 90 or both setting and/or orientation by control.Can finish described setting and/or orientation by pressure and/or the gas flow rate of control carrier gas jet 71.In a kind of mode, the carrier gas jet can be placed on around the evaporation agent source 40 with loop configurations, and it is inner that wherein evaporation agent source 40 coaxially is incorporated into the loop configurations of carrier gas jet 71 at least basically.This loop configurations can be a variety of arrangement type.In a kind of mode, finish described setting and orientation by pressure and/or gas flow rate in each carrier gas jet of controlling individually one by one described arrangement.The example of carrier gas can comprise one or more in following any combination: rare gas element (for example, He), reactive gas (N 2, H 2, or O 2) or form the gas (Ar, Xe, or Kr) of ion; And the suitable carrier gas of any other type.
In the various embodiment that discuss from the beginning to the end, the relative pressure of carrier gas jet 71 and/or gas flow rate can by one by one individually control be used for from one side to any or both of the other side directional scanning plasma body or described steam plumage.
In various embodiments, the carrier gas jet can be introduced reactant gases.In a kind of mode, reactant gases can form compound with the gas phase form with steam plumage atom or molecule simultaneously in the carrier gas jet during transporting.In another kind of mode, reactant gases can form compound by the chemical reaction on the deposition surface of substrate.Replacedly, reactant gases can be simultaneously with following two kinds of pattern formation compounds: during transporting with the steam plumage in the carrier gas jet simultaneously with the gas phase form; And by the chemical reaction on the deposition surface of this at least one substrate.
In a kind of mode, high energy beam 50 faintly ionizes steam plumage 90, forms thus plasma body 105.And the arc-over between anode 80 and the evaporation agent source 40 ionizes the steam particle effectively with occupying an leading position, improves thus the ionization of plasma body 105 so that intensive plasma body zone 100 to be provided.The carrier gas jet is crossed intensive plasma body zone by ionization with occupying an leading position simultaneously.In a kind of mode, the electric current of arc-over can be changed in order to adjust or control the density of plasma body.In a kind of mode, the flow that the balance between steam particle ion and the carrier gas ion can be by changing carrier gas and/or composition and controlled.The carrier gas jet that is ionized has the momentum that can be controlled by electrostatic force.Replacedly, carrier gas can before be ionized; Or the combination of previous ionization and the ionization in intensive plasma body zone the time.The carrier gas jet that is ionized of control and/or the steam particle that is ionized of carrying secretly provide to the surface topography of the each several part of at least one coating of substrate or (a plurality of) coating with interior mutually, the manipulation of structure and stress.
In a kind of mode, anode 80 can be annular or ring-type, and be placed with at least basically coaxial with at least one carrier gas jet.In a kind of mode, anode is segmented to form two or more anode segments, and described anode segment is electrically isolated from each other and mechanically is arranged so that each anode segment is corresponding to one of evaporation agent source 40.When by independent controllable current source supply one by one, this mode is provided at the ionization of the steam particle that 40 places, different evaporation agents source produce and can be controlled independently of one another.
In a kind of mode, the embodiment of equipment 10 can comprise that at least one refrigerating unit 42 is used at least one evaporation agent source 40 of cooling.For example, refrigerating unit 42 can be crucible, water or fluid cooling crucible or as required or other devices that require.Crucible can about 0 to approximately-be biased during 10 V, perhaps as required or require to be biased.
In a kind of mode, the embodiment of equipment 10 can comprise bias voltage 57, and this bias voltage is applied to substrate 20, is used for towards described substrate 20 speeding-up ions.Therefore, in a kind of mode, provide electrostatic ionic to draw and acceleration region 58, as shown in Figure 2.Will be appreciated that bias voltage 57 can be DC, AC, or positive, negative or two pulsed voltages that symbol has.Scope can be about 0 to about 10 3V or can be as required or require and change.Show and have about 100 exemplary embodiments to the scope of about 200V.In addition, in a kind of mode, the impact that thermal source 59 can be provided for heated substrates 20 advantageously or ion can be used for finishing this heating.Well heater or heating can be optional.
The frequency that the aspect of the embodiment of the inventive method and equipment 10 comprises the pulsed bias voltage 57 of controlling substrate is to change deposition position on the substrate 20 so that thickness, structure, composition, unrelieved stress and/or other coating characteristics on the control substrate 20.And another aspect of the embodiment of this equipment comprises at least one the oriented energy bundle 50 with formation steam plumage 90 for bump evaporation agent source 40.Oriented energy bundle 50 can also be controlled to for example change the oriented energy of following when evaporating by the oriented energy bundle is pulsed.By this way, can set up the finite length (slug (slug)) that arrives the steam of substrate position with the speed of being determined by the jet flow condition.Further again, the aspect of embodiment can comprise coordinates both control of substrate biasing voltage 57 and oriented energy bundle 50.As the result of this coordination, this will further strengthen the ability of thickness, structure, composition, unrelieved stress, other coating characteristics and/or the position of the deposition region on the control substrate.For example, control can comprise that the stage with pulsation is modified to substrate biasing voltage and oriented energy bundle.
In a kind of mode, anode can be arranged to be set up magnetic field and is used for direct magnetic flux so that the magnetic field line in the anode front is arranged essentially parallel to its surface and by radial directed, forms closed electronic drift track along the circumferential direction that is arranged essentially parallel to the surface of anode 80 thus.Magnetic field has promoted to be used for accelerating the axial potential gradient of positive ion towards substrate 20.
Fig. 3 provides constant pressure, and (nitrogen pressure mbar) and be deposited on the diagrammatic representation of the relation between the dynamic stiffness (Gpa) of the coating on the substrate, illustrates the advantage that is associated with the embodiment that uses without dirty arc method thus.By will without the operating pressure of dirty electric arc technique from the previous contemplated higher pressure scope that expands DVD technique to, producing obviously harder coating.
Turn to Fig. 4, Fig. 4 provides jet ion current density (mA/cm 2) the diagrammatic representation of relation between contrast jet flow (slm).Its ion(ic)current that arrival substrate when plasma body is crossed by gas-jet is shown can increase, and the nucleidic mass of this effect and gas-jet and plasma particle is proportional.This has illustrated that ion pulls technique, and wherein the collision between gas-jet atom and the ion is preferably guided ion into substrate, causes for the non-electrostatic equipment of handling plasma body.
Fig. 5 provides the illustrating of impact of pulse bias mode when it relates to coated substrate 20.Fig. 5 A illustrates Coating Ions 24 and does not setover substrate 20(namely, does not wherein apply bias voltage) between interaction.Thickness be the plasma sheath 22 of ds be formed and this sheath 22 in positive charge Coating Ions 24 attracted to substrate 20 by the sheath electromotive force.The thickness d s that Fig. 5 B illustrates sheath 22 when applying (or increase) negative bias voltage increases.The flux of this thickness extension and the correspondingly increase of Coating Ions 24 attracted to substrate 20 from the steam plumage.Some ions also with apply neutrals (that is, neutral coating atom 26) collision, and with them towards the substrate scattering, further increased the mark that is deposited on the vapor atomic on the substrate.Fig. 5 C illustrates when bias voltage is turned off, and the thickness d s of sheath 22 is owing to before beginning to increase from the sheath deionizing.The flux of this thickness extension and the correspondingly increase of Coating Ions 24 attracted to substrate 20.Some ions in addition with apply neutrals (that is, neutral coating atom 26) collision, and with them towards the substrate scattering.Most of ion is deposited to substrate, stays positive ion depleted region 28.At last, plasma sheath caves in and gets back to its initial (not biasing) value.
Fig. 6 provides illustrating of streamline 75 on the carrier gas jet 71 of atom with steam plumage of carrying secretly and ion.Carrier gas jet 71 provides positive ion to replenish the positive ion depleted region shown in Fig. 5 C.The motion that replenishes by these particle ions of streamline mobile around substrate of steam deposition and atomic or ion occurs.The particle that is deposited is moved along streamline with the speed that is subjected to the control of jet flow condition and substrate geometry.If it is large that the time between the bias pulse and particle in the streamline cross that the time of substrate compares, then fully replenished between pulse near the particle the substrate.Exemplary pulse speed can be about 10 4Hz, it is 100 μ s between pulse, but can as required or require to be conditioned.The gas-jet streamline that is rich in Coating Ions can have the velocity of particle of about 1000m/s (particle per 1 μ s on substrate moves the distance of about 1mm); Perhaps can be as required or require and change.Therefore between these pulses, be added in the 1mm length on the substrate.By the speed of the particle in the manipulation streamline and the cycle between the pulse, can be produced by the impact of rare gas element or condensation atom and substrate evenly or the deposition and the plasmaassisted effect that highly localize.
Fig. 7 provides illustrating for the technology of for example using constant bias coating non-planar surfaces.With reference to figure 7A, the coating 25(that the high energy recoat covers ion 24 and previous deposition is metallic coating for example) collision, and will apply the zone (for example, groove) that atom 27 is splashed to the low coating of the common reception atom flux on the substrate again.Because the resulting accumulation coating 29 of coating atom of sputter is illustrated in Fig. 7 B and 7C again.
The device of various embodiment of the present invention disclosed herein, system, composition, equipment and method can be utilized disclosed all respects in following reference, application, publication and the patent, and integrally incorporate described reference, application, publication and patent into this paper by reference thus:
U.S. Patent No. 5,368,897, the people such as Kurihra, " Method for Arc Discharge Plasma Vapor Deposition of Diamond ", on November 29th, 1994.
U.S. Patent No. 4,668,365, the people such as Foster " Apparatus and Method for Magnetron-Enhanced Plasma-Assisted Chemical Vapor Deposition ", on May 26th, 1987.
U.S. Patent No. 5,242,530, the people such as Batey " Pulsed Gas Plasma-Enhanced Chemical Vapor Deposition of Silicon ", on September 7th, 1993.
U.S. Patent No. 5,614,273, the people such as Goedicke " Process and Apparatus for Plasma-Activated Electron Beam Vaporization ", on March 25th, 1997.
U.S. Patent No. 5,780,803, the people such as Goedicke " Process for the Stabilization of Plasma Generation by Means of Electron Beam Vaporizer ", on July 14th, 1988.
U.S. Patent No. 6,083,356, the people such as Goedicke " Method and Device for Pre-Treatment of Substrates ", on July 4th, 2000.
International patent application No. PCT/US2010/025259, is entitled as " Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof " on February 24th, 2010;
International patent application No. PCT/US2008/073071, on August 13rd, 2008 submitted to, was entitled as " Thin Film Battery Synthesis by Directed Vapor Deposition "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on February 16th, 12/733,160,2010, was entitled as " Thin Film Battery Synthesis by Directed Vapor Deposition "; Haydn N.G. Wadley;
International patent application No. PCT/US2006/025978, filed June 30,2006 is entitled as " Reliant Thermal Barrier Coating System and Related Methods and Apparatus of Making the Same "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on December 14th, 11/917,585,2007, was entitled as " Reliant Thermal Barrier Coating System and Related Methods and Apparatus of Making the Same "; Haydn N.G. Wadley;
Sequence number is the U.S. Patent application of No. 11/788,958, and on April 23rd, 2007 submitted to, was entitled as " Multifunctional Battery and Method of Making the Same "; U.S. Patent Application Publication No. No. 2007-0269716, on November 22nd, 2007;
International patent application No. PCT/US2001/022266, submit to July 16 calendar year 2001, is entitled as " Method And Apparatus For Heat Exchange Using Hollow Foams and Interconnected Networks and Method of Making the Same "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on January 14th, 10/333,004,2003, was entitled as " Heat Exchange Foam "; Haydn N.G. Wadley, U.S. Patent No. 7,401, issue 643,2008 year July 22;
U.S. Patent application No. 11/928,161, on October 30th, 2007 submitted to, was entitled as " Method and Apparatus for Heat Exchange Using Hollow Foams and Interconnected Networks and Method of Making the Same "; Haydn N.G. Wadley;
International patent application No. PCT/US2005/000606, on January 10th, 2005 submitted to, was entitled as " Apparatus and Method for Applying Coatings onto the Interior Surfaces of Components and Related Structures Produced There from "; Haydn N.G. Wadley;
U.S. Patent application No. 10/584,682, on June 28th, 2006 submitted to, was entitled as " Apparatus and Method for Applying Coatings onto the Interior Surfaces of Components and Related Structures Produced There from "; Haydn N.G. Wadley;
International patent application No. PCT/US2004/024232, on July 28th, 2004 submitted to, was entitled as " Method for Application of a Thermal Barrier Coating and Resultant Structure Thereof; Haydn N.G. Wadley;
U.S. Patent application No. submitted on February 14th, 10/566,316,2006, was entitled as " Method for Application of a Thermal Barrier Coating and Resultant Structure Thereof; Haydn N.G. Wadley;
International patent application No. PCT/US2003/037485, on November 21st, 2003 submitted to, was entitled as " Bond Coat for a Thermal Barrier Coating System and Related Method Thereof; Haydn N.G. Wadley;
U.S. Patent application No. submitted on May 18th, 10/535,364,2005, was entitled as " Bond Coat for a Thermal Barrier Coating System and Related Method Thereof; Haydn N.G. Wadley;
International patent application No. PCT/US2003/036035, on November 12nd, 2003 submitted to, was entitled as " Extremely Strain Tolerant Thermal Protection Coating and Related Method and Apparatus Thereof; Haydn N.G. Wadley;
U.S. Patent application No. submitted on May 5th, 10/533,993,2005, was entitled as " Extremely Strain Tolerant Thermal Protection Coating and Related Method and Apparatus Thereof; Haydn N.G. Wadley;
International patent application No. PCT/US2003/023111, on July 24th, 2003 submitted to, was entitled as " Method and Apparatus for Dispersion Strengthened Bond Coats for Thermal Barrier Coatings "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on January 21st, 10/522,076,2005, was entitled as " Method and Apparatus for Dispersion Strengthened Bond Coats for Thermal Barrier Coatings "; Haydn N.G. Wadley;
International patent application No. PCT/US2003/012920, on April 25th, 2003 submitted to, was entitled as " Apparatus and Method for Uniform Line of Sight and Non-Line of Sight Coating at High Rate "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on October 15th, 10/512,161,2004, was entitled as " Apparatus and Method for Uniform Line of Sight and Non-Line of Sight Coating at High Rate "; Haydn N.G. Wadley;
International patent application No. PCT/US2002/28654, on September 10th, 2002 submitted to, was entitled as " Method and Apparatus for Application of Metallic Alloy Coatings "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on March 9th, 10/489,090,2004, was entitled as " Method and Apparatus Application of Metallic Alloy Coatings "; Haydn N.G. Wadley;
International patent application No.PCT/US2002/13639, on April 30th, 2002 submitted to, was entitled as " Method and Apparatus for Efficient Application of Substrate Coating "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on October 29th, 10/476,309,2003, was entitled as " Method and Apparatus for Efficient Application of Substrate Coating "; Haydn N.G. Wadley;
International patent application No. PCT/US2001/16693, submit to May 23 calendar year 2001, is entitled as " A Process and Apparatus for Plasma Activated Deposition In Vacuum "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on November 21st, 10/297,347,2002, was entitled as " Process and Apparatus for Plasma Activated Deposition in a Vacuum "; Haydn N.G. Wadley; U.S. Patent No. 7,014, on May 21st, 889,2006 issued.
U.S. Patent application No. 09/634,457, on August 7th, 2000 submitted to, was entitled as " Apparatus and Method for Intra-Layer Modulation of the Material Deposition and Assist Beam and the Multilayer Structure Produced There from "; Haydn N.G. Wadley; U.S. Patent No. 6,478, on November 12nd, 931,2002 issued.
U.S. Patent application No. 10/246,018, on September 18th, 2002 submitted to, was entitled as " Apparatus and Method for Intra-layer Modulation of the Material Deposition and Assist Beam and the Multilayer Structure Produced There from "; Haydn N.G. Wadley;
International patent application No. PCT/US2001/025158, submit to August 10 calendar year 2001, is entitled as " Multifunctional Battery And Method Of Making The Same "; Haydn N.G. Wadley;
U.S. Patent application No. 10/110,368, filed July 22,2002 is entitled as " Multifunctional Battery and Method of Making the Same "; Haydn N.G. Wadley; U.S. Patent No. 7,211, on May 1st, 348,2007 issued;
International patent application No. PCTUS submitted on June 15th, 1999/13450,1999, was entitled as " Apparatus And Method For Producing Thermal Barrier Coatings "; Haydn N.G. Wadley;
Publication number is the international patent application of No. PCT/US1997/11185, and on July 8th, 1997 submitted to, was entitled as " Production Of Nanometer Particles By Directed Vapor Deposition Of Electron Beam Evaporant "; Haydn N.G. Wadley;
U.S. Patent application No. submitted on July 8th, 08/679,435,1996, was entitled as " Production of Nanometer Particles by Directed Vapor Deposition of Electron Beam Evaporant "; Haydn N.G. Wadley; U.S. Patent No. 5,736, on April 7th, 073,1998 issued;
U.S. Patent application No. submitted on August 31st, 08/298,614,1994, was entitled as " Directed Vapor Deposition of Electron Beam Evaporant "; Haydn N.G. Wadley; U.S. Patent No. 5,534, on July 9th, 314,1996 issued; And
U.S. Patent No. 5,635,087, the people such as Schiller " Apparatus for Plasma-Assisted High Rate Electron Beam Vaporization ", on June 3rd, 1997 issued.
Schiller S, Goedicke K, Reschke J, Scheffel B, Metzner C, Kern H (1993) Verfahren zum Elektronenstrahlverdampfen. German patent DE 43 36 680 C2
Goedicke?K,?Scheffel?B,?Schiller?S?(1994)?Plasma-activated?high?rate?electron?beam?evaporation?using?a?spotless?cathodic?arc.?Surface?and?Coatings?Technology?68/69:?799-803
Metzner?C,?Scheffel?B,?Goedicke?K?(1996)?Plasma-activated?electron?beam?deposition?with?diffuse?cathodic?vacuum?arc?discharge?(SAD):?a?technique?for?coating?strip?steel.?Surface?and?Coatings?Technology?86/87:?769-775
Heinss?JP?(2004)?Deposition?of?hard?abrasion-resistant?films?at?rates?of?100?nm/s?using?plasma-activated?evaporation.?In:?Annual?Report?of?Fraunhofer?FEP?2004:?60-63。
Unless clear and definite on the contrary regulation does not require for any specific mutual relationship of any specific description or the action that illustrates or element, any particular order or the action of this class, any specific dimensions, speed, material, time length, profile, yardstick or frequency or this class component.And any action can be repeated, and any action can be carried out by a plurality of entities, and/or any element can be replicated.Further, any action or element can be excluded, and the order of action can change, and/or the mutual relationship of element can change.Will be appreciated that each aspect of the present invention can as required or require to have sizes, profile, shape, composition and material.
In a word, although described the present invention about specific embodiment, many modifications, modification, change, replacement and equivalent will be obvious to those skilled in the art.The invention is not restricted to the scope according to specific embodiment described herein.In fact, according to description and the accompanying drawing of front, those, various modifications of the present invention also will be obvious to those skilled in the art except described herein.Therefore, the present invention only will be considered to the spirit and scope restriction by claim appended, that comprise all modifications and equivalent.
By the accompanying drawing of reading detailed description recited above and certain exemplary embodiments, also have other embodiment to become easily obvious for those skilled in the art.Should be appreciated that a plurality of modification, modification and additional embodiment are possible, and therefore all these modification, modification and embodiment will be regarded as in the application's spirit and scope.For example, no matter the application's any part (for example, exercise question, field, background, summary, summary, accompanying drawing etc.) content how, unless clear and definite on the contrary regulation is for this paper's or require inclusion, any specific description or the action that illustrates or element, any particular order of this class action or any specific phase mutual relation of this class component in any claim of any application of its right of priority not to require.And any action can be repeated, and any action can be carried out by a plurality of entities, and/or any element can be replicated.Further, any action or element can be excluded, and the order of action can change, and/or the mutual relationship of element can change.Unless clear and definite on the contrary regulation does not require for any specific mutual relationship of any specific description or the action that illustrates or element, any particular order or the action of this class, any specific dimensions, speed, material, yardstick or frequency or this class component.Therefore, it is illustrative in essence that description and accompanying drawing are regarded as, and is not regarded as restrictive.And, when any number or scope when this paper is described, unless clear and definite in addition explanation, this number or scope are similar to.When any scope when this paper is described, unless clear and definite in addition explanation, this scope comprise wherein all values and all subranges wherein.(for example be merged in by reference any material of this paper, the U.S./foreign patent, the U.S./foreign patent application, books, article etc.) in any information only be incorporated into by reference such degree, namely between this category information and other statements described in this paper and accompanying drawing, do not have conflict.If this conflict occurs, comprise the conflict that any claim that will cause this paper is invalid or seek its right of priority that any this class conflicting information in the material that this class is merged in is not by reference incorporated into this paper especially by reference so.

Claims (92)

1. one kind is used at least one coating is applied to equipment at least one substrate, and described equipment comprises:
The sediment chamber;
At least one evaporation agent source;
Be used for clashing at least one high energy beam that described at least one evaporation agent source forms the steam plumage;
At least one anode, it is used for forming arc-over between described at least one anode and described at least one evaporation agent source near being placed on described evaporation agent source; And
Form at least one jet and be used for described steam plumage towards horizontal limited at least one carrier gas that transports of substrate.
2. equipment according to claim 1, wherein said at least one evaporation agent source is solid.
3. equipment according to claim 1, wherein said at least one carrier gas jet are auxiliary with described steam plumage setting and be transported to described at least one substrate at least in part.
4. equipment according to claim 3, the device that wherein is used for launching described carrier gas jet comprise following at least one: pipeline, conduit, pipe, groove, flexible pipe, handle, duct, entrance, groove, path and passage.
5. equipment according to claim 3, wherein by described carrier gas jet to the described setting of described steam plumage with transport at least in part and realize by physics and/or electrostatic interaction between the formation of described steam plumage and described carrier gas jet.
6. equipment according to claim 1, wherein said at least one carrier gas jet at least basically protects described at least one anode and does not contact with described steam plumage, is used for reducing the accumulation of evaporation agent on described at least one anode.
7. equipment according to claim 1, wherein said at least one carrier gas jet is placed with at least basically coaxial with described at least one evaporation agent source.
8. equipment according to claim 7, wherein said at least one carrier gas jet are auxiliary with described steam plumage setting and be transported to described substrate at least in part.
9. equipment according to claim 7, wherein when described at least one carrier gas jet is ionized, described at least one carrier gas jet that is ionized has the momentum that can be controlled by electromagnetic force.
10. equipment according to claim 9, wherein said controlled at least one carrier gas jet that is ionized provide to the surface topography of described at least one coating of described at least one substrate with interior mutually, the manipulation of structure and stress.
11. equipment according to claim 1, wherein said high energy beam ionizes described steam plumage, forms plasma body.
12. equipment according to claim 11, wherein said arc-over have increased the ionization of described plasma body so that intensive plasma body zone to be provided.
13. equipment according to claim 1 further comprises be used at least one refrigerating unit that cools off described at least one evaporation agent source.
14. equipment according to claim 13, wherein said refrigerating unit comprises crucible.
15. equipment according to claim 11, the direction of wherein said at least one carrier gas jet and/or intensity can be used for described plasma body or described steam plumage or both setting and/or orientation by control.
16. equipment according to claim 15 is wherein finished described setting and/or orientation by the pressure that controls described at least one carrier gas jet or the gas flow rate of controlling described at least one carrier gas jet.
17. equipment according to claim 1, wherein said at least one carrier gas jet are placed on loop configurations around described at least one evaporation agent source, it is inner that wherein said evaporation agent source coaxially is incorporated into described loop configurations at least basically.
18. equipment according to claim 17, wherein said loop configurations provides arrangement.
19. equipment according to claim 17, the direction of wherein said at least one carrier gas jet and/or intensity can be used for described plasma body or described steam plumage or both setting and/or orientation by control.
20. equipment according to claim 19 is wherein finished described setting and orientation by the gas flow rate of controlling individually one by one the pressure in each carrier gas jet or control individually one by one in each carrier gas jet.
21. equipment according to claim 20, the relative pressure of wherein said carrier gas jet and/or gas flow rate can by one by one individually control be used for from one side to any or both of the described plasma body of the other side directional scanning or described steam plumage.
22. equipment according to claim 1, wherein said high energy beam is produced by electron beam gun or laser source.
23. equipment according to claim 1, wherein said high energy electron gun further comprises the device for the bundle rum point that changes described at least one evaporation agent source.
24. equipment according to claim 1 further comprises being applied to described substrate for the bias voltage towards described substrate speeding-up ion.
25. equipment according to claim 24, wherein:
Described high energy beam ionizes described steam plumage, forms plasma body; And
Described bias voltage accelerates ion in the described plasma body towards described at least one substrate static, provide thus extra momentum, and this momentum helps described steam plumage is transported to described at least one substrate.
26. equipment according to claim 24, wherein said bias voltage are DC, AC or pulsed voltage.
27. equipment according to claim 26, wherein said pulsed bias voltage are controlled to change at the deposition position on described at least one substrate to control thickness, structure, composition, unrelieved stress and/or other coating characteristics on described at least one substrate.
28. equipment according to claim 1, wherein said carrier gas jet is introduced reactant gases.
29. equipment according to claim 28, wherein said reactant gases form compound with the gas phase form with described steam plumage simultaneously in described carrier gas jet during transporting.
30. equipment according to claim 28, wherein said reactant gases forms compound by the chemical reaction on the deposition surface of described at least one substrate.
31. equipment according to claim 1, wherein said at least one carrier gas jet help described steam plumage setting, and its momentum is auxiliary transports described steam plumage towards described at least one substrate.
32. equipment according to claim 1, wherein said anode is annular.
33. equipment according to claim 32, wherein said anode are placed with at least basically coaxial with described at least one carrier gas jet.
34. equipment according to claim 32, wherein said anode is segmented to form two or more anode segments.
35. equipment according to claim 32, wherein said anode further comprises such device, this device is used for setting up magnetic field and is used for direct magnetic flux so that the magnetic field line in described anode front is arranged essentially parallel to its surface and by radial directed, forms closed electronic drift track along the circumferential direction that is arranged essentially parallel to the surface of described anode thus.
36. equipment according to claim 35, wherein said magnetic field promotes to be used for accelerating towards described substrate the axial potential gradient of positive ion.
37. equipment according to claim 1 further comprises the solenoid coil that coaxially and/or at least in part is placed near described evaporation agent source.
38. described equipment according to claim 37, wherein said solenoid coil can make described high energy beam crooked at least in part.
39. described equipment according to claim 37, the efficient of described anode is placed and powered up so that magnetically strengthened to wherein said solenoid coil like this.
40. described equipment according to claim 37, wherein said solenoid coil increase at least in part plasma density and promote to be used for accelerating towards described substrate the axial potential gradient of positive ion.
41. equipment according to claim 1, wherein said anode are placed in the position that raises on the described evaporation agent source.
42. equipment according to claim 1, wherein said anode is placed on the described substrate.
43. one kind is used at least one coating is applied to method at least one substrate, described method comprises:
Described at least one substrate is provided;
The sediment chamber is provided;
At least one evaporation agent source is provided;
Utilize at least one described at least one evaporation agent source of high energy beam bump to produce the steam plumage;
Between at least one anode and described at least one evaporation agent source, form arc-over; And
Launch at least one carrier gas, form at least one jet along the direction of at least basically aliging with described steam plumage and be used for described steam plumage towards horizontal limited the transporting of described substrate.
44. described method according to claim 43, wherein said at least one evaporation agent source is solid.
45. described method according to claim 43, wherein said at least one carrier gas jet are auxiliary with described steam plumage setting and be transported to described at least one substrate at least in part.
46. described method according to claim 45, the device that wherein is used for launching described carrier gas jet comprise following at least one: pipeline, conduit, pipe, groove, flexible pipe, handle, duct, entrance, groove, path and passage.
47. described method according to claim 45, wherein by described carrier gas jet to the described setting of described steam plumage with transport at least in part and realize by physics and/or electrostatic interaction between the formation of described steam plumage and described carrier gas jet.
48. described method according to claim 45, wherein said at least one carrier gas jet at least basically protects described at least one anode and does not contact with described steam plumage.
49. described method according to claim 43, wherein said at least one carrier gas jet is placed with at least basically coaxial with described at least one evaporation agent source.
50. described method according to claim 49, wherein said at least one carrier gas jet are auxiliary with described steam plumage setting and be transported to described substrate at least in part.
51. described method according to claim 49, wherein when described at least one carrier gas jet was ionized, described method comprised the momentum by described at least one the carrier gas jet that is ionized of electromagnetic force control.
52. 1 described method according to claim 5, further comprise with described controlled at least one carrier gas jet that is ionized handle described at least one substrate coating surface topography with interior mutually, structure and stress.
53. described method according to claim 43, wherein said high energy beam ionizes described steam plumage, forms plasma body.
54. 3 described methods comprise that further the electric current that changes described arc-over is to adjust or to control the density of described plasma body according to claim 5.
55. described method further comprises at least one refrigerating unit that is provided for cooling off described at least one evaporation agent source according to claim 43.
56. 5 described methods according to claim 5, wherein said cooling source comprises crucible.
57. 3 described methods according to claim 5, direction and/or the intensity of controlling described at least one carrier gas jet are used for described plasma body or described steam plumage or both setting and/or orientation.
58. 7 described methods are wherein finished described setting and/or orientation by the pressure that controls described at least one carrier gas jet or the gas flow rate of controlling described at least one carrier gas jet according to claim 5.
59. described method according to claim 43, wherein said at least one carrier gas jet is placed on loop configurations around described at least one evaporation agent source, and it is inner that wherein said evaporation agent source coaxially is incorporated into described loop configurations at least basically.
60. 9 described methods according to claim 5, wherein said loop configurations provides arrangement.
61. 9 described methods comprise that further direction and/or the intensity of controlling described at least one carrier gas jet are used for described plasma body or described steam plumage or both setting and/or orientation according to claim 5.
62. 1 described method is wherein finished described setting and orientation by the gas flow rate of controlling individually one by one the pressure in each carrier gas jet or control individually one by one in each carrier gas jet according to claim 6.
63. 2 described methods according to claim 6 comprise that further the described relative pressure that controls described carrier gas jet and/or gas flow rate are used for from one side to any or both of the described plasma body of the other side directional scanning or described steam plumage.
64. described method further comprises the bundle rum point that changes in described at least one evaporation agent source according to claim 43.
65. 4 described methods according to claim 6, wherein said device for changing the bundle rum point comprises at least one deflector coil.
66. described method comprises that further bias voltage is applied to described substrate to be used for towards described substrate speeding-up ion according to claim 43.
67. 6 described methods according to claim 6, wherein:
Described high energy beam ionizes described steam plumage, forms plasma body; And
Described bias voltage accelerates ion in the described plasma body towards described at least one substrate static, provide thus extra momentum, and this momentum helps described steam plumage is transported to described at least one substrate.
68. 6 described methods according to claim 6, wherein said bias voltage is DC, AC or pulsed voltage.
69. 8 described methods comprise that further the frequency of controlling described pulsed bias voltage is to change at the deposition position on described at least one substrate to control thickness, structure, composition, unrelieved stress and/or other coating characteristics on described at least one substrate according to claim 6.
70. described method according to claim 43, wherein said carrier gas jet is introduced reactant gases.
71. 0 described method according to claim 7, wherein said reactant gases form compound with the gas phase form with described steam plumage simultaneously in described carrier gas jet during transporting.
72. 0 described method according to claim 7, wherein said reactant gases forms compound by the chemical reaction on the deposition surface of described at least one substrate.
73. described method according to claim 43, wherein said carrier gas jet help described steam plumage setting, and its momentum is auxiliary transports described steam plumage towards described at least one substrate.
74. described method according to claim 43, wherein said anode is annular.
75. 4 described methods according to claim 7, wherein said anode is placed with at least basically coaxial with described at least one carrier gas jet.
76. 4 described methods according to claim 7, wherein said anode is segmented to form two or more anode segments.
77. 4 described methods according to claim 7, further comprise and set up magnetic field and be used for direct magnetic flux so that the magnetic field line in described anode front is arranged essentially parallel to its surface and by radial directed, forms closed electronic drift track along the circumferential direction that is arranged essentially parallel to the surface of described anode thus.
78. 7 described methods according to claim 7, wherein said magnetic field promotes to be used for accelerating towards described substrate the axial potential gradient of positive ion.
79. described method further comprises solenoid coil coaxially and/or at least in part is placed near described evaporation agent source according to claim 43.
80. described method further comprises the solenoid coil that is provided for making described high energy beam bending according to claim 43.
81. 9 described methods according to claim 7, the efficient of described anode is placed and powered up so that magnetically strengthened to wherein said solenoid coil like this.
82. 9 described methods according to claim 7, wherein said solenoid coil increase at least in part plasma density and promote to be used for accelerating towards described substrate the axial potential gradient of positive ion.
83. described method according to claim 43, wherein said anode is placed in the position that raises on the described evaporation agent source.
84. described method according to claim 43, wherein said anode is placed on the described substrate.
85. equipment according to claim 27, wherein said high energy beam are controlled to change at the deposition position on described at least one substrate to control thickness, structure, composition, unrelieved stress and/or other coating characteristics on described at least one substrate.
86. equipment according to claim 1, wherein said high energy beam are controlled to change at the deposition position on described at least one substrate to control thickness, structure, composition, unrelieved stress and/or other coating characteristics on described at least one substrate.
87. 6 described equipment according to claim 8, wherein said control to described high energy beam provides the foundation of the finite length of the steam plumage that arrives described at least one substrate, and the finite length of described steam plumage limits slug thus.
88. 7 described equipment according to claim 8, the described arrival of wherein said slug is subjected to the intensity control of described carrier gas jet.
89. 9 described methods comprise that further the described high energy beam of control is to change at the deposition position on described at least one substrate to control thickness, structure, composition, unrelieved stress and/or other coating characteristics on described at least one substrate according to claim 6.
90. described method comprises that further the described high energy beam of control is to change at the deposition position on described at least one substrate to control thickness, structure, composition, unrelieved stress and/or other coating characteristics on described at least one substrate according to claim 43.
91. 0 described method according to claim 9, wherein said control to described high energy beam provides the foundation of the finite length of the steam plumage that arrives described at least one substrate, and the finite length of described steam plumage limits slug thus.
92. 1 described method according to claim 9, the described arrival of wherein said slug is subjected to the intensity control of described carrier gas jet.
CN201180022808.4A 2010-05-06 2011-05-06 Spotless arc directed vapor deposition (SA-DVD) and related method thereof Expired - Fee Related CN103003467B (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US33184410P 2010-05-06 2010-05-06
US61/331844 2010-05-06
US61/331,844 2010-05-06
US36671110P 2010-07-22 2010-07-22
US61/366,711 2010-07-22
US61/366711 2010-07-22
PCT/US2011/035581 WO2011140481A1 (en) 2010-05-06 2011-05-06 Spotless arc directed vapor deposition (sa-dvd) and related method thereof

Publications (2)

Publication Number Publication Date
CN103003467A true CN103003467A (en) 2013-03-27
CN103003467B CN103003467B (en) 2015-04-01

Family

ID=44904109

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180022808.4A Expired - Fee Related CN103003467B (en) 2010-05-06 2011-05-06 Spotless arc directed vapor deposition (SA-DVD) and related method thereof

Country Status (4)

Country Link
EP (1) EP2572014A4 (en)
CN (1) CN103003467B (en)
SG (1) SG185413A1 (en)
WO (1) WO2011140481A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110819954A (en) * 2018-08-13 2020-02-21 台湾积体电路制造股份有限公司 Film deposition system and method for controlling particles in film deposition system

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014014541A2 (en) * 2012-04-27 2014-01-23 Directed Vapor Technologies International Wear resistant coatings and process for the application thereof
JP5832985B2 (en) * 2012-11-09 2015-12-16 住友重機械工業株式会社 Deposition equipment
ITBO20120695A1 (en) * 2012-12-20 2014-06-21 Organic Spintronics S R L IMPULSED PLASMA DEPOSITION DEVICE
WO2015073094A2 (en) 2013-08-27 2015-05-21 University Of Virginia Patent Foundation Lattice materials and structures and related methods thereof
US10233533B2 (en) 2014-01-09 2019-03-19 United Technologies Corporation Coating process using gas screen
EP3189298A1 (en) 2014-09-04 2017-07-12 University Of Virginia Patent Foundation Impulse mitigation systems for media impacts and related methods thereof
EP3492625B1 (en) * 2014-10-24 2024-05-22 RTX Corporation Nanoparticle formation mitigation in a deposition process
US10184759B2 (en) 2015-11-17 2019-01-22 University Of Virgina Patent Foundation Lightweight ballistic resistant anti-intrusion systems and related methods thereof
US11866816B2 (en) 2016-07-06 2024-01-09 Rtx Corporation Apparatus for use in coating process
WO2019111183A1 (en) * 2017-12-06 2019-06-13 Arizona Thin Film Research Llc Systems and methods for additive manufacturing for the deposition of metal and ceramic materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238546A (en) * 1990-03-01 1993-08-24 Balzers Aktiengesellschaft Method and apparatus for vaporizing materials by plasma arc discharge
US20080220177A1 (en) * 2005-06-30 2008-09-11 University Of Virginia Patent Foundation Reliant Thermal Barrier Coating System and Related Methods and Apparatus of Making the Same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372069A (en) * 1989-08-12 1991-03-27 Nisshin Steel Co Ltd Method for continuously vapor-depositing compound on metal strip
DE4336681C2 (en) * 1993-10-27 1996-10-02 Fraunhofer Ges Forschung Method and device for plasma-activated electron beam evaporation
US5478608A (en) * 1994-11-14 1995-12-26 Gorokhovsky; Vladimir I. Arc assisted CVD coating method and apparatus
US5736073A (en) * 1996-07-08 1998-04-07 University Of Virginia Patent Foundation Production of nanometer particles by directed vapor deposition of electron beam evaporant
DE59811474D1 (en) * 1997-06-13 2004-07-01 Unaxis Trading Ag Truebbach METHOD FOR PRODUCING WORKPIECES COATED WITH AN EPITACTIC LAYER
US6391164B1 (en) * 2000-06-23 2002-05-21 Isak I. Beilis Deposition of coatings and thin films using a vacuum arc with a non-consumable hot anode
US20050266163A1 (en) * 2002-11-12 2005-12-01 Wortman David J Extremely strain tolerant thermal protection coating and related method and apparatus thereof
WO2010099218A1 (en) * 2009-02-24 2010-09-02 University Of Virginia Patent Foundation Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238546A (en) * 1990-03-01 1993-08-24 Balzers Aktiengesellschaft Method and apparatus for vaporizing materials by plasma arc discharge
US20080220177A1 (en) * 2005-06-30 2008-09-11 University Of Virginia Patent Foundation Reliant Thermal Barrier Coating System and Related Methods and Apparatus of Making the Same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110819954A (en) * 2018-08-13 2020-02-21 台湾积体电路制造股份有限公司 Film deposition system and method for controlling particles in film deposition system

Also Published As

Publication number Publication date
EP2572014A4 (en) 2016-03-02
EP2572014A1 (en) 2013-03-27
SG185413A1 (en) 2012-12-28
CN103003467B (en) 2015-04-01
WO2011140481A1 (en) 2011-11-10

Similar Documents

Publication Publication Date Title
CN103003467B (en) Spotless arc directed vapor deposition (SA-DVD) and related method thereof
US20170236692A1 (en) Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof
US7014889B2 (en) Process and apparatus for plasma activated depositions in a vacuum
US9793098B2 (en) Low pressure arc plasma immersion coating vapor deposition and ion treatment
Grigoriev et al. Broad fast neutral molecule beam sources for industrial-scale beam-assisted deposition
CA2867451C (en) Low pressure arc plasma immersion coating vapor deposition and ion treatment
CN104364416A (en) Filtered cathodic arc deposition apparatus and method
BR102013023563A2 (en) remote arc discharge plasma assisted processes
WO2005089107A2 (en) Apparatus and method for applying coatings onto the interior surfaces of components and related structures produced therefrom
US9761424B1 (en) Filtered cathodic arc method, apparatus and applications thereof
Coll et al. Design of vacuum arc-based sources
US20150368783A1 (en) Deposition apparatus with gas supply and method for depositing material
Baranov et al. Direct current arc plasma thrusters for space applications: Basic physics, design and perspectives
Gorokhovsky et al. Characterization of large area filtered arc deposition technology: Part I—Plasma processing parameters
US20070256927A1 (en) Coating Apparatus for the Coating of a Substrate and also Method for Coating
US20240043142A1 (en) Sources for plasma assisted electric propulsion
EP2896063A1 (en) Plasma source
JP3409874B2 (en) Ion plating equipment
US20140034484A1 (en) Device for the elimination of liquid droplets from a cathodic arc plasma source
EP2590756B1 (en) Method and apparatus for applying a coating at a high rate onto non-line-of-sight regions of a substrate
Park et al. A stationary plasma thruster for modification of polymer and ceramic surfaces
JP2006111930A (en) Film deposition system
JP3618643B2 (en) Film forming apparatus and method
RU2620534C2 (en) Method of coating and device for its implementation
Meunier et al. Erosion of carbon arc cathodes operating in the thermo-field electron emission mode

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150401

Termination date: 20170506

CF01 Termination of patent right due to non-payment of annual fee