CN103000248A - Solar cell front sliver paste powder adaptable to high sheet resistance and shallow junction - Google Patents
Solar cell front sliver paste powder adaptable to high sheet resistance and shallow junction Download PDFInfo
- Publication number
- CN103000248A CN103000248A CN2012104465352A CN201210446535A CN103000248A CN 103000248 A CN103000248 A CN 103000248A CN 2012104465352 A CN2012104465352 A CN 2012104465352A CN 201210446535 A CN201210446535 A CN 201210446535A CN 103000248 A CN103000248 A CN 103000248A
- Authority
- CN
- China
- Prior art keywords
- additive
- powder
- solar cell
- glass dust
- average grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Conductive Materials (AREA)
Abstract
The invention relates to solar cell front sliver paste powder adaptable to high sheet resistance and shallow junction. The powder comprises, by weight percent, 50-75% of coarse sliver powder 2-5 micrometers in average particle size, 20-45% of fine sliver powder 0.5-2 micrometers in average particle size, 1-9% of glass powder, and 0.1-3% of additive. The components are added up to 100% by weight percent. Both the glass powder and the additive are in twin-peak particle size distribution. Compared with the prior art, the front sliver paste powder is optimized by powder gradation. The glass powder and the additive are proper in particle size. Voids between the coarse and fine sliver powders can be effectively filled with the glass powder and the additive. After sintering, silver islands are small and evenly distributed, can form fine orphic contacts and are fine in appearance. The glass powder has moderate activity and does not disrupt P-N junctions. The front sliver paste made from the powder is suitable for sintering on shallow-junction silicon cells.
Description
Technical field
The present invention relates to a kind of electric slurry, be specifically related to a kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction.
Background technology
Solar cell is a kind of semiconductor device that can convert solar energy into electrical energy.Along with the development of photovoltaic industry, the high square resistance shallow junction becomes one of development trend of solar battery sheet gradually.The silicon solar cell of high square resistance shallow junction structures can reduce the minority carrier recombination speed of solar cell surface and improve short wave response, thereby improves the electricity conversion of cell piece.The positive silver paste that the high square resistance shallow junction General Requirements of realizing cell piece is used for making electrode of solar battery has high sintering temperature.Common silver slurry is many when being used on the silicon cell with shallow junction structures sintering, and the bypass junction phenomena can occur, and cause leakage current, and the contact resistance of electrode is large, can reduce the output characteristic of electric current, and then reduce the performance of battery.Therefore be necessary to adjust at the prescription of positive silver paste, to adapt to the sintering requirement of the silicon cell with shallow junction structures.Because solvent, organic carrier and organic additive in the positive silver paste substantially all are removed in the stage at the low temperature drying of cell piece, therefore these components do not exert an influence substantially to the sintering temperature of positive silver paste, and the factor that the sintering temperature of positive silver paste exerts an influence is mainly derived from silver powder, glass dust and inorganic additive.Therefore, the solar cell positive silver paste of a kind of adaptation high square resistance shallow junction that is comprised of silver powder, glass dust and inorganic additive of exploitation is very necessary with powder material.
At present, it is electric conductor that the solar cell positive silver paste adopts the silver powder of single particle size more, and its shortcoming is that the sintering activity of silver powder is single; If use large particle diameter silver powder, then the silverskin structure is fine and close not behind the sintering, and the contact resistance between electrode and the silicon substrate is large; If use small particle diameter silver powder, the easy excessive curtain coating of silver powder in the sintering then, and need high silver powder loading can reach the index of electrode conductivity, preparation cost is high.By contrast, the mixture of the silver powder that the two particle diameters of use or many particle diameters distribute is as the electric conductor of positive silver paste, be that the mixture of disclosed a kind of thick silver powder that uses 0.1-1 μ m super fine silver powder, the thin silver powder of 1-3 μ m and 3-6 μ m in 201210030266.1 the Chinese patent is as the positive silver paste of electric conductor such as application number, because the silver powder that wherein particle size is different has different sintering activities, so has preferably electrode outward appearance behind this positive silver paste sintering.But at present used positive silver paste powder material is basic only to carry out the optimization of powder grating from the angle of silver powder; And in fact, glass dust and inorganic additive all affect the sintering of positive silver paste.
Summary of the invention
The technical issues that need to address of the present invention are to overcome the deficiencies in the prior art, and a kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction is provided.
The technical issues that need to address of the present invention are achieved through the following technical solutions: a kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction, and its composition and percetage by weight thereof are: average grain diameter is that thick silver powder 50-75%, the average grain diameter of 2-5 μ m is thin silver powder 20-45%, glass dust 1-9%, the additive 0.1-3% of 0.5-2 μ m; Wherein, the percetage by weight sum of each component is 100%.
For the compactness of silverskin behind the further raising sintering, preferred technical scheme can be that above-mentioned thickness silver powder is sphere or class is spherical, tap density〉5.5g/cm
3This high tap density silver powder can closely be piled up, and guarantees the conductivity of silverskin.
For fear of glass dust when the high temperature sintering on silicon substrate excessive curtain coating and cause the formation of piece silver, this glass dust must have moderate softening temperature.Preferred technical scheme can be that the softening point of above-mentioned glass dust is 380-480 ℃.
Further preferred technical scheme can be that the composition of above-mentioned glass dust and percetage by weight thereof are: lead oxide 65-85%, aluminium oxide 0.5-5%, silica 1-10%, zinc oxide 1-10%, magnesium oxide 1-10%; Wherein, each component weight percentage sum of glass dust is 100%.
In order effectively to realize effectively bonding to above-mentioned thickness silver powder of glass dust, further preferred technical scheme can be, above-mentioned glass dust has bimodal attitude particle diameter and distributes, account for 10-35% on the thin glass dust weight of average grain diameter less than 0.5 μ m, surplus is that average grain diameter is the coarse glass frit of 0.5-5 μ m, and the percetage by weight sum of coarse glass frit and thin glass dust is 100%.Therefore, coarse glass frit can be dispersed in the hole between the above-mentioned crude aluminum silver powder, and thin glass dust can be dispersed in the hole between the above-mentioned thin silver powder, so adopt the mixture of this thickness glass dust can effective bonding thickness silver powder, avoids the formation of piece silver in the high temperature sintering.
In order to promote the formation of ohmic contact between silverskin and the silicon substrate, can be at this positive silver paste with using a small amount of additive in the powder material, with acceleration of sintering.Preferred technical scheme can be that above-mentioned additive is one or more in copper, tin, zinc, the nickel metal simple-substance.Form alloy between the metal simple-substance that silver particles can and be added, penetrate antireflective coating after the fusing, thereby promoted the diffusion of silver particles, form ohmic contact, reduce series resistance.
Further preferred technical scheme is, above-mentioned additive has bimodal attitude particle diameter and distributes, account for 10-35% on the weight of additive of average grain diameter less than 0.5 μ m, surplus is that average grain diameter is the additive of 0.5-5 μ m, and the percetage by weight sum of the additive of two kinds of different-grain diameters is 100%.This additive with bimodal attitude particle diameter distribution can be filled the hole between thickness silver powder and the thickness glass dust effectively, so that it is more even to penetrate the process of antireflective coating, the electrical property of the electrode of gained is more even.
Compared with prior art, advantage of the present invention is with beneficial effect: the solar cell positive silver paste that the present invention adapts to the high square resistance shallow junction adopts two kinds of different high jolt ramming silver powder collocation to use sintering rear electrode compact structure, outward appearance high conformity with powder material; Glass dust active suitable, penetrate the puncture that the P-N knot can not occur behind the antireflective coating and cause the bypass junction phenomena, glass dust adopts two particle diameters to distribute simultaneously, bonding thickness silver powder effectively, the silver-colored island size that forms in the sintering cooling procedure is less, and be evenly distributed, so can make silverskin and silicon substrate produce good ohmic contact; Additive also can be evenly and has effectively been improved ohmic contact between silverskin and the silicon substrate; The more conventional positive silver paste of the use amount of glass dust is few with the consumption of glass dust in this powder material, and can reach the required adhesive force of commercial Application, so the resistance of the electrode of gained and grid line is little, electricity conversion is high.This powder material is fit to for the preparation of at the positive silver paste with sintering on the silicon cell of shallow junction structures.
Embodiment
Below in conjunction with embodiment, the specific embodiment of the present invention is described further.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
Embodiment 1
A kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction, its composition and percetage by weight thereof are: average grain diameter is that thick silver powder 50%, the average grain diameter of 2-5 μ m is thin silver powder 45%, glass dust 4.9%, the additive 0.1% of 0.5-2 μ m.Wherein, thickness silver powder is sphere or class is spherical, tap density〉5.5g/cm
3The softening point of glass dust is 380-480 ℃, and the composition of glass dust and percetage by weight thereof are: lead oxide 65%, aluminium oxide 5%, silica 10%, zinc oxide 10%, magnesium oxide 10%; Glass dust has bimodal attitude particle diameter and distributes, and accounts for 10% on the thin glass dust weight of average grain diameter less than 0.5 μ m, and average grain diameter is that the coarse glass frit of 0.5-5 μ m accounts for 90%; Additive is tin simple substance, has bimodal attitude particle diameter and distributes, and accounts for 10% on the weight of additive of average grain diameter less than 0.5 μ m, and average grain diameter is that the additive of 0.5-5 μ m accounts for 90%.
Embodiment 2
A kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction, its composition and percetage by weight thereof are: average grain diameter is that thick silver powder 75%, the average grain diameter of 2-5 μ m is thin silver powder 20%, glass dust 2%, the additive 3% of 0.5-2 μ m.Wherein, thickness silver powder is sphere or class is spherical, tap density〉5.5g/cm
3The softening point of glass dust is 380-480 ℃, and the composition of glass dust and percetage by weight thereof are: lead oxide 85%, aluminium oxide 5%, silica 1%, zinc oxide 4%, magnesium oxide 5%; Glass dust has bimodal attitude particle diameter and distributes, and accounts for 35% on the thin glass dust weight of average grain diameter less than 0.5 μ m, and average grain diameter is that the coarse glass frit of 0.5-5 μ m accounts for 65%; Additive is copper simple substance, has bimodal attitude particle diameter and distributes, and accounts for 35% on the weight of additive of average grain diameter less than 0.5 μ m, and average grain diameter is that the additive of 0.5-5 μ m accounts for 65%.
Embodiment 3
A kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction, its composition and percetage by weight thereof are: average grain diameter is that thick silver powder 62%, the average grain diameter of 2-5 μ m is thin silver powder 27%, glass dust 9%, the additive 2% of 0.5-2 μ m.Wherein, thickness silver powder is sphere or class is spherical, tap density〉5.5g/cm
3The softening point of glass dust is 380-480 ℃, and the composition of glass dust and percetage by weight thereof are: lead oxide 81%, aluminium oxide 2%, silica 9%, zinc oxide 1%, magnesium oxide 7%; Glass dust has bimodal attitude particle diameter and distributes, and accounts for 15% on the thin glass dust weight of average grain diameter less than 0.5 μ m, and average grain diameter is that the coarse glass frit of 0.5-5 μ m accounts for 85%; Additive is nickel simple substance, has bimodal attitude particle diameter and distributes, and accounts for 20% on the weight of additive of average grain diameter less than 0.5 μ m, and average grain diameter is that the additive of 0.5-5 μ m accounts for 80%.
Embodiment 4
A kind of solar cell positive silver paste powder material that adapts to the high square resistance shallow junction, its composition and percetage by weight thereof are: average grain diameter is that thick silver powder 66%, the average grain diameter of 2-5 μ m is thin silver powder 32%, glass dust 1%, the additive 1% of 0.5-2 μ m.Wherein, thickness silver powder is sphere or class is spherical, tap density〉5.5g/cm
3The softening point of glass dust is 380-480 ℃, and the composition of glass dust and percetage by weight thereof are: lead oxide 85%, aluminium oxide 0.5%, silica 6%, zinc oxide 7.5%, magnesium oxide 1%; Glass dust has bimodal attitude particle diameter and distributes, and accounts for 25% on the thin glass dust weight of average grain diameter less than 0.5 μ m, and average grain diameter is that the coarse glass frit of 0.5-5 μ m accounts for 75%; Additive is the by weight mixture of 1:1 of copper, zinc simple substance, has bimodal attitude particle diameter and distributes, and accounts for 24% on the weight of additive of average grain diameter less than 0.5 μ m, and average grain diameter is that the additive of 0.5-5 μ m accounts for 76%.
Above-mentioned each embodiment is to further specifying that foregoing of the present invention is made, but the scope that should not be construed as the above-mentioned theme of the present invention only limits to above-described embodiment.Should be pointed out that for those skilled in the art under the prerequisite that does not break away from the technology of the present invention principle, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. solar cell positive silver paste powder material that adapts to the high square resistance shallow junction, it is characterized in that: the composition of this powder material and percetage by weight thereof are: average grain diameter is that thick silver powder 50-75%, the average grain diameter of 2-5 μ m is thin silver powder 20-45%, glass dust 1-9%, the additive 0.1-3% of 0.5-2 μ m; Wherein, the percetage by weight sum of each component is 100%.
2. the solar cell positive silver paste powder material of adaptation high square resistance shallow junction according to claim 1 is characterized in that: described thickness silver powder is sphere or class is spherical, tap density〉5.5g/cm
3
3. the solar cell positive silver paste powder material of adaptation high square resistance shallow junction according to claim 1, it is characterized in that: the softening point of described glass dust is 380-480 ℃.
4. the solar cell positive silver paste powder material of adaptation high square resistance shallow junction according to claim 3, it is characterized in that: the composition of described glass dust and percetage by weight thereof are: lead oxide 65-85%, aluminium oxide 0.5-5%, silica 1-10%, zinc oxide 1-10%, magnesium oxide 1-10%; Wherein, each component weight percentage sum of glass dust is 100%.
5. according to claim 3 or the solar cell positive silver paste powder material of 4 described adaptation high square resistance shallow junctions, it is characterized in that: described glass dust has bimodal attitude particle diameter and distributes, account for 10-35% on the thin glass dust weight of average grain diameter less than 0.5 μ m, surplus is that average grain diameter is the coarse glass frit of 0.5-5 μ m, and the percetage by weight sum of coarse glass frit and thin glass dust is 100%.
6. the solar cell positive silver paste powder material of adaptation high square resistance shallow junction according to claim 1, it is characterized in that: described additive is one or more in copper, tin, zinc, the nickel metal simple-substance.
7. the solar cell positive silver paste powder material of adaptation high square resistance shallow junction according to claim 6, it is characterized in that: described additive has bimodal attitude particle diameter and distributes, account for 10-35% on the weight of additive of average grain diameter less than 0.5 μ m, surplus is that average grain diameter is the additive of 0.5-5 μ m, and the percetage by weight sum of the additive of two kinds of different-grain diameters is 100%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210446535.2A CN103000248B (en) | 2012-11-10 | 2012-11-10 | A kind of solar cell positive silver paste powder material adapting to high square resistance shallow junction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210446535.2A CN103000248B (en) | 2012-11-10 | 2012-11-10 | A kind of solar cell positive silver paste powder material adapting to high square resistance shallow junction |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103000248A true CN103000248A (en) | 2013-03-27 |
CN103000248B CN103000248B (en) | 2015-10-28 |
Family
ID=47928712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210446535.2A Active CN103000248B (en) | 2012-11-10 | 2012-11-10 | A kind of solar cell positive silver paste powder material adapting to high square resistance shallow junction |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103000248B (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104668551A (en) * | 2015-01-28 | 2015-06-03 | 哈尔滨工业大学深圳研究生院 | Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste |
CN106816199A (en) * | 2017-01-23 | 2017-06-09 | 湖南省国银新材料有限公司 | A kind of high square resistance crystal silicon solar energy battery front electrode silver slurry and preparation method thereof |
CN107658045A (en) * | 2017-08-30 | 2018-02-02 | 南通天盛新能源股份有限公司 | A kind of unleaded PERC batteries back electrode silver paste and preparation method |
CN110061074A (en) * | 2019-03-05 | 2019-07-26 | 苏州市贝特利高分子材料股份有限公司 | A kind of PERC solar battery |
CN110060794A (en) * | 2019-03-05 | 2019-07-26 | 苏州市贝特利高分子材料股份有限公司 | PERC silver paste based on granularity compounding |
CN112272851A (en) * | 2018-07-06 | 2021-01-26 | 千住金属工业株式会社 | Conductive paste and sintered body |
CN113096846A (en) * | 2021-03-23 | 2021-07-09 | 华中科技大学 | P-type emitter ohmic contact silver electrode slurry |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101136261A (en) * | 2007-07-06 | 2008-03-05 | 广东风华高新科技股份有限公司 | Copper electrode slurry material and manufacturing method thereof |
US20090211626A1 (en) * | 2008-02-26 | 2009-08-27 | Hideki Akimoto | Conductive paste and grid electrode for silicon solar cells |
CN101609849A (en) * | 2009-07-13 | 2009-12-23 | 中南大学 | Silver conductive paste used for positive electrode of solar battery and preparation technology thereof |
CN101615637B (en) * | 2009-07-08 | 2010-09-15 | 西安交通大学苏州研究院 | Sizing agent for forming electrode of solar cell and preparation method thereof |
CN102603196A (en) * | 2012-02-13 | 2012-07-25 | 江苏瑞德新能源科技有限公司 | Glass mixing powder, preparation method thereof and conductive silver paste containing glass mixing powder |
CN102751000A (en) * | 2012-06-16 | 2012-10-24 | 华东微电子技术研究所合肥圣达实业公司 | Lead-free and cadmium-free electrode silver slurry for piezoelectric ceramics and preparation method thereof |
-
2012
- 2012-11-10 CN CN201210446535.2A patent/CN103000248B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101136261A (en) * | 2007-07-06 | 2008-03-05 | 广东风华高新科技股份有限公司 | Copper electrode slurry material and manufacturing method thereof |
US20090211626A1 (en) * | 2008-02-26 | 2009-08-27 | Hideki Akimoto | Conductive paste and grid electrode for silicon solar cells |
CN101615637B (en) * | 2009-07-08 | 2010-09-15 | 西安交通大学苏州研究院 | Sizing agent for forming electrode of solar cell and preparation method thereof |
CN101609849A (en) * | 2009-07-13 | 2009-12-23 | 中南大学 | Silver conductive paste used for positive electrode of solar battery and preparation technology thereof |
CN102603196A (en) * | 2012-02-13 | 2012-07-25 | 江苏瑞德新能源科技有限公司 | Glass mixing powder, preparation method thereof and conductive silver paste containing glass mixing powder |
CN102751000A (en) * | 2012-06-16 | 2012-10-24 | 华东微电子技术研究所合肥圣达实业公司 | Lead-free and cadmium-free electrode silver slurry for piezoelectric ceramics and preparation method thereof |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104668551A (en) * | 2015-01-28 | 2015-06-03 | 哈尔滨工业大学深圳研究生院 | Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste |
CN104668551B (en) * | 2015-01-28 | 2017-01-04 | 哈尔滨工业大学深圳研究生院 | A kind of bimodal distribution nano silver paste as thermal interfacial material and preparation method thereof |
CN106816199A (en) * | 2017-01-23 | 2017-06-09 | 湖南省国银新材料有限公司 | A kind of high square resistance crystal silicon solar energy battery front electrode silver slurry and preparation method thereof |
CN106816199B (en) * | 2017-01-23 | 2019-01-29 | 湖南省国银新材料有限公司 | A kind of high square resistance crystal silicon solar energy battery front electrode silver slurry and preparation method thereof |
CN107658045A (en) * | 2017-08-30 | 2018-02-02 | 南通天盛新能源股份有限公司 | A kind of unleaded PERC batteries back electrode silver paste and preparation method |
CN112272851A (en) * | 2018-07-06 | 2021-01-26 | 千住金属工业株式会社 | Conductive paste and sintered body |
CN110061074A (en) * | 2019-03-05 | 2019-07-26 | 苏州市贝特利高分子材料股份有限公司 | A kind of PERC solar battery |
CN110060794A (en) * | 2019-03-05 | 2019-07-26 | 苏州市贝特利高分子材料股份有限公司 | PERC silver paste based on granularity compounding |
CN113096846A (en) * | 2021-03-23 | 2021-07-09 | 华中科技大学 | P-type emitter ohmic contact silver electrode slurry |
Also Published As
Publication number | Publication date |
---|---|
CN103000248B (en) | 2015-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103000248B (en) | A kind of solar cell positive silver paste powder material adapting to high square resistance shallow junction | |
CN103000252B (en) | A kind of back silver paste of solar cell with ultralow silver content | |
CN102104076B (en) | Conductive paste for solar cell electrode and solar cell using the same | |
CN102592708B (en) | Aluminum conductor slurry for silicon solar energy battery | |
CN103000255B (en) | The low sintering solar cell positive silver paste of a kind of adaptation | |
CN103700428B (en) | Silicon solar battery electrode electrocondution slurry and preparation method thereof | |
CN105655005A (en) | Electrode silver slurry for crystalline silicon solar cell | |
CN105655009A (en) | Silver slurry for crystalline silicon solar cell | |
CN103000247B (en) | A kind of solar cell back aluminum slurry powder material adapting to high square resistance shallow junction | |
TW201319213A (en) | Conductive adhesive composition for use in solar cells and uses thereof | |
CN102687205A (en) | Electroconductive paste composition | |
CN106683744A (en) | Low-temperature sintering solar-cell back-electrode silver slurry | |
CN102779566A (en) | Lead-free conductive silver paste for front faces of crystalline silicon solar cells | |
CN103000254B (en) | A kind of solar cell back aluminum slurry with wide sintering process window | |
TW201922658A (en) | Electrode paste for solar cell's electrode and solar cell using the same | |
WO2018040570A1 (en) | Local contact back surface field aluminum paste for high-efficiency double-sided crystalline silicon solar cell and preparation method thereof | |
CN103000256A (en) | Undoped solar cell back aluminum slurry | |
CN104681123A (en) | Solar battery back silver paste and preparing method thereof as well as solar battery and preparing method thereof | |
CN107240435A (en) | A kind of photovoltaic cell silver paste and preparation method thereof | |
CN110648781A (en) | Main grid front silver paste suitable for step-by-step screen printing | |
CN105810284A (en) | Slurry for silicon solar cell | |
CN104992747A (en) | Environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste | |
CN105655416A (en) | Electrode slurry for silicon solar cell | |
CN105655007A (en) | Mixed slurry for crystalline silicon solar cell | |
CN103915128A (en) | Conductive slurry for photovoltaic battery back electrode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |