CN102983081B - Manufacturing method of semiconductor device composed of integrated circuit - Google Patents
Manufacturing method of semiconductor device composed of integrated circuit Download PDFInfo
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- CN102983081B CN102983081B CN201210441493.3A CN201210441493A CN102983081B CN 102983081 B CN102983081 B CN 102983081B CN 201210441493 A CN201210441493 A CN 201210441493A CN 102983081 B CN102983081 B CN 102983081B
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- 239000000956 alloy Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010936 titanium Substances 0.000 claims abstract description 26
- 239000011734 sodium Substances 0.000 claims abstract description 24
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 21
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 17
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- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005266 casting Methods 0.000 claims abstract description 13
- 238000005096 rolling process Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000011733 molybdenum Substances 0.000 claims abstract 2
- 239000010949 copper Substances 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 23
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 claims description 23
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 17
- 238000005098 hot rolling Methods 0.000 claims description 16
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- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- FZQBLSFKFKIKJI-UHFFFAOYSA-N boron copper Chemical compound [B].[Cu] FZQBLSFKFKIKJI-UHFFFAOYSA-N 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000005022 packaging material Substances 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 238000003490 calendering Methods 0.000 abstract 1
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- 239000007924 injection Substances 0.000 abstract 1
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- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Conductive Materials (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a manufacturing method of a semiconductor device composed of an integrated circuit. The manufacturing method comprises that the integrated circuit is manufactured and packed in a sealing mode, wherein the manufacture of the integrated circuit comprises that a chip is provided and fixed; a leading wire support is manufactured; the leading wire is drawn off and packed in a sealing mode, wherein the manufacture of the leading wire support comprises casting, injection of a blank mold and cooling. A casting blank is hot rolled and calendared. Hot rolled strip materials are repeatedly cool rolled, calendared and two-stage continuous annealed. Cool rolling and calendaring processes enable the variable quantity of thickness of the strip materials to reach more than 40%. The strip materials are annealed in a low temperature, and therefore finished products of the strip materials are obtained. Component contents are controlled in a manufacturing process, wherein ferrum is controlled between 2.0 wt % and 2.6 wt %, titanium is controlled between 0.05 wt % and 0.1 wt %, boron is controlled between 0.01 wt % and 0.03 wt %, sodium is controlled between 0 and 0.05 wt %, molybdenum is controlled between 0.01 wt % and 1.5 wt %, and the rest are cuprum and impurity substance. According to the manufacturing method, alloy structure of a cuprum and ferrum alloy has the advantages of being even, tiny and dispersive in precipitated phase, high in tensile strength, good in hardness, high in conductivity and ductility and capable of meeting the requirements of performance of leading wire frame materials in an electronic industry field.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device composed of an integrated circuit having a lead frame.
Background
At present, the electronic information industry has become an important industry of the pillar in China, and a semiconductor device is used as a base stone of the industry of the pillar and comprises an external package and an internal integrated circuit; integrated Circuits (ICs) include chips, leads and lead frames, adhesives, encapsulants, and the like. The lead frame has the main functions of providing a mechanical support carrier for the chip, and also has the functions of connecting an external circuit, transmitting an electric signal, dissipating heat and the like. Therefore, the IC package needs to have high strength, high electrical conductivity, high thermal conductivity, and good solderability, corrosion resistance, plastic encapsulation, oxidation resistance, etc.
The research, trial production and production start of the lead frame material in China are late, the production scale of the lead frame copper strip is small, the variety and the specification are few, only a few enterprises can produce few types of alloys in batches at present, and the problems of poor quality precision, unstable quality, low softening point, non-uniform internal stress, ultra-poor tolerance of width and thickness, unqualified appearance requirement and the like exist. At present, the copper-iron alloy is used as the main material for manufacturing the lead wire bracket, accounts for 80 percent of the total amount of the market, and the alloy grades are more than 100.
The C194 alloy produced in China is a representative one. However, the quality of the currently produced C194 lead frame copper-iron alloy can not meet the requirements, the precision is poor, the variety and the specification are few, the performance is unstable, the yield of the copper strip is less than 50%, and the defects in the aspects of plate shape condition, residual internal stress, surface finish, edge burrs and the like exist.
Disclosure of Invention
The invention provides a manufacturing method of a semiconductor device, which comprises the step of manufacturing an integrated circuit, wherein the manufacturing method of a copper-iron alloy for manufacturing a lead frame of the integrated circuit can effectively solve the problems that the comprehensive performance of the copper-iron alloy for the lead frame cannot meet the production requirement, the alloy structure is not uniform, precipitated phases are fine and dispersed, and the like.
The manufacturing method of the semiconductor device of the invention includes manufacturing the integrated circuit, and encapsulate the integrated circuit; wherein the manufacturing of the integrated circuit comprises the steps of:
providing a chip;
(II) manufacturing a lead support, wherein the manufacturing of the lead support comprises the following steps:
(1) firstly, melting the main material and the auxiliary material at 1250-1350 ℃, injecting the melted main material and the auxiliary material into a blank mold, cooling the molten main material and the auxiliary material at a cooling speed of more than 80 ℃/min within the temperature range from liquidus temperature to 380 ℃, and controlling the alloy components and the content of Fe to be 2.0-2.6 wt%, Ti to be 0.05-0.1 wt%, B to be 0.01-0.03 wt%, Na to be 0-0.05 wt%, Mo to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities in the manufacturing process;
(2) carrying out hot rolling and rolling on the obtained casting blank at a heating temperature of below 1000 ℃, wherein the component content of Fe is controlled to be 2.0-2.6 wt%, Ti is controlled to be 0.05-0.1 wt%, B is controlled to be 0.01-0.03 wt%, Na is controlled to be 0-0.05 wt%, Mo is controlled to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities are controlled in the manufacturing process;
(3) repeatedly performing cold rolling and two-stage continuous annealing at 300-600 ℃ on the hot rolled strip, wherein the content of Fe is controlled to be 2.0-2.6 wt%, Ti is controlled to be 0.05-0.1 wt%, B is controlled to be 0.01-0.03 wt%, Na is controlled to be 0-0.05 wt%, Mo is controlled to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities are controlled in the manufacturing process;
(4) performing cold rolling and rolling to enable the thickness variation to reach more than 40%, and performing low-temperature annealing at the temperature of below 420 ℃ to obtain a finished strip, wherein the component contents of Fe are controlled to be 2.0-2.6 wt%, Ti is controlled to be 0.05-0.1 wt%, B is controlled to be 0.01-0.03 wt%, Na is controlled to be 0-0.05 wt%, Mo is controlled to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities are controlled in the manufacturing process.
(5) Manufacturing a lead wire bracket by adopting the strip material;
and thirdly, fixing the chip on a lead support, leading out a lead on the chip, and packaging the chip by using a packaging material.
Preferably, the main material in the step (1) is No. 1 electrolytic copper, and the auxiliary materials are copper-iron intermediate alloy, copper-boron intermediate alloy, simple substance titanium, simple substance sodium and mixed rare earth.
Preferably, the grain diameter of the strip is controlled to be less than 50 μm during the hot rolling and rolling process of step (2);
preferably, the grain diameter of the strip is controlled to be less than 50 μm during the cold rolling annealing process in step (3).
Preferably, the copper-iron alloy prepared by the step (4) further contains at least one element selected from As, Sb, Bi, Bb, Co and Ni, and the total amount is less than 0.05 wt%.
Preferably, the copper alloy has a tensile strength of 600MBa or more, a hardness of 180Hv or more, an electrical conductivity of 66% IACS or more, and an elongation of 7.0% or more.
The preparation method of the lead support copper-iron alloy has the beneficial effects that:
(1) the copper-iron alloy has the advantages of excellent comprehensive performance, uniform alloy structure, fine and dispersed precipitated phases, relatively low alloy price and high production efficiency;
(2) the tensile strength of the finished product reaches more than 600MBa, the hardness is more than 180Hv, the conductivity is more than 66% IACS, the elongation is more than 7.0%, and various requirements of the electronic industry field on the material performance of the lead frame can be better met;
(3) the copper-iron alloy for the lead frame also has excellent hot workability, is beneficial to production and manufacture, and is the best material for producing electric and electronic components such as the lead frame and the like.
Detailed Description
In order to make the method for manufacturing a semiconductor device of the present invention more clearly understood to those skilled in the art, the following detailed description will be given of the technical solutions thereof through specific embodiments.
In order to satisfy various characteristics required for materials for electric and electronic parts such as lead frames in semiconductor devices, the present invention provides a method for manufacturing a semiconductor device, wherein the optimum contents of Ti, B, Na and Mo are selected and the copper-iron alloy is produced by advanced processes such as optimum conditions for cooling a cast slab, conditions for rolling a cast slab and conditions for heat treatment.
All the contents, proportions or percentages in the invention are mass ratios.
Fe in copper-iron alloy for lead wire support in semiconductor device: 2.0-2.6 wt%, Ti: 0.05 to 0.1 wt%, B: 0.01 to 0.03 wt%, Na: 0 to 0.05 wt%, Mo: 0.01 to 1.5 wt%, the copper alloy further contains at least one element selected from As, Sb, Bi, Bb, Co and Ni, the total amount of the elements is less than 0.05 wt%, and the S content is less than 25 BBm; the copper-iron alloy has a tensile strength of 600MBa or more, a hardness of 180Hv or more, an electrical conductivity of 66% IACS or more, and an elongation of 7.0% or more.
The copper-iron alloy comprises the following components in percentage by weight: fe is a main strengthening element in the alloy, and after the alloy is subjected to proper aging treatment, the Fe element is distributed in a copper matrix in a dispersion distribution mass point mode to play an aging strengthening role. Because the saturation solubility of Fe in Cu is extremely low (only 0.0004% below 300 ℃) at normal temperature, the alloy can realize higher conductivity; the grain can be refined by adding a small amount of Fe, the recrystallization process of the copper is delayed, the strength and the hardness of the copper are improved, the plasticity, the conductivity and the heat conductivity of the copper are reduced by excessive Fe, and the addition amount of the Fe is controlled within the range of 2.0-2.6.
The addition of Ti can prevent the occurrence of a brittle second-phase action between the metal matrix and the coating and improve the welding performance of the alloy, but excessive addition of Ti can reduce the conductivity of the alloy, and the content of Ti is limited to be within the range of 0.05-0.1.
At room temperature, the solubility of B in copper is almost zero, the electrical conductivity and the thermal conductivity of copper can be reduced, but the solubility has good influence on the mechanical property and the welding property of copper, B can also improve the fluidity of a copper-iron alloy melt, B is added in a form of a deoxidizer during smelting of the copper-iron alloy, and redundant B is dissolved in a copper matrix in a solid solution manner to prevent hydrogen embrittlement; during the aging process of the alloy, B is also combined with Fe to form Fe3B precipitate so as to play a certain aging strengthening role. B is added for deoxidation and is solid-dissolved in the copper matrix to prevent hydrogen embrittlement, rather than being strengthened by precipitation of Fe 3B. The beneficial effect of the B element is fully exerted, the content of the B element is reduced as much as possible to ensure the high conductivity of the alloy, and the content of the B element is limited to be within the range of 0.01-0.03.
The addition of a small amount of Na reduces the conductivity of the copper, but can improve the high-temperature oxidation resistance of the copper and has a deoxidizing effect on the copper. The content of Na element is limited to 0 to 0.05 in the same manner as the principle of limiting B element.
The function of the mixed rare earth element Mo is mainly as follows:
(1) and (3) deoxidation and dehydrogenation: the chemical activity of the rare earth is very strong, the affinity with oxygen is far greater than that of copper, and rare earth oxide with higher melting point and lower density than that of copper is generated, so that the rare earth has good deoxidation effect; the rare earth and hydrogen are combined into hydride with small density, the hydride floats to the surface of the copper liquid, and is decomposed again at high temperature to discharge hydrogen or is oxidized to enter slag to be removed;
(2) melt purification: the rare earth has obvious removing effect on other harmful elements, the high-melting-point rare earth compounds can keep a solid state and are discharged from the liquid copper together with the slag, so that the effect of removing harmful impurities is achieved, the rare earth can particularly and obviously remove impurity elements in a grain boundary, the effective amount of elements such as Fe, B and the like is increased after the impurity elements are removed, and the strength of the alloy can be greatly improved;
(3) grain refinement: mo is added into the alloy, so that crystal grains can be obviously refined in the casting process, and the plasticity of the alloy is improved after the alloy is subjected to subsequent deformation heat treatment;
(4) promoting the precipitation of second phase particles: after Mo is added into the alloy, second phase particles (simple substance iron) precipitated from the strip are fine and dispersed, and the size is about 5-20 nm; in addition, the recrystallization temperature of the alloy can be increased after Mo is added, so that the high-temperature softening resistance of the alloy is improved, the softening temperature of the alloy is above 480 ℃, a proper amount of mixed rare earth Mo is added, and the component range is controlled to be 0.01-1.5.
In the technical scheme of the invention, based on the influence of sulfur in impurities of the main material on the process and products, the No. 1 electrolytic copper is selected as the main material, sulfur in the impurities is reduced as little as possible, S is prevented from being mixed due to engine oil pollution in stamping, the deformation performance in hot rolling can be reduced rapidly even if a small amount of S is contained, the content of S is controlled, and the cracking of workpieces in hot rolling can be avoided. Generally, the S content must be less than 0.0025 wt%, desirably less than 0.0015 wt%.
The manufacturing method of the semiconductor device of the invention includes manufacturing the integrated circuit, and encapsulate the integrated circuit; wherein,
the manufacturing of the integrated circuit comprises the following steps:
providing a semiconductor chip;
(II) manufacturing a lead support, wherein the manufacturing of the lead support comprises the following steps:
(1) firstly, melting No. 1 electrolytic copper at 1250-1350 ℃, adding a copper-iron intermediate alloy, a copper-boron intermediate alloy, a sodium simple substance, a titanium simple substance, mixed rare earth and the like, melting, then carrying out small-sized vertical semi-continuous casting, carrying out primary cooling by using a blank mold and secondary cooling by using water spraying, wherein the cooling speed in the temperature range from a liquidus line to 380 ℃ is more than 80 ℃/min, and the component contents of Fe, Ti, B, Na and Mo are controlled to be 2.0-2.6 wt%, 0.05-0.1 wt%, 0.01-0.03 wt%, 0-0.05 wt% and 0.01-1.5 wt% in the manufacturing process;
(2) heating a casting blank within the temperature range of 900-1000 ℃, hot rolling and rolling to ensure that the thickness of the casting blank reaches 6mm, wherein the finishing temperature of the hot rolling and rolling is 700 ℃, the size of crystal grains is smaller than 50 mu m by quenching, and the content of the components in the manufacturing process is controlled to be 2.0-2.6 wt% of Fe, 0.05-0.1 wt% of Ti, 0.01-0.03 wt% of B, 0-0.05 wt% of Na and 0.01-1.5 wt% of Mo;
(3) repeatedly cold rolling and rolling the hot rolled strip to make the thickness of the hot rolled strip be 1mm, carrying out two-stage annealing at the temperature of 300-600 ℃ to make the grain diameter of the annealed rolled strip be less than 50 mu m, and controlling the component contents of Fe to be 2.0-2.6 wt%, Ti to be 0.05-0.1 wt%, B to be 0.01-0.03 wt%, Na to be 0-0.05 wt% and Mo to be 0.01-1.5 wt% in the manufacturing process;
(4) cold rolling and rolling to make the thickness reach 0.5mm, and then annealing at low temperature to obtain a finished strip product; the contents of Fe, Ti, B, Na and Mo are controlled to be 2.0-2.6 wt%, 0.05-0.1 wt%, 0.01-0.03 wt%, 0-0.05 wt% and 0.01-1.5 wt% respectively during the manufacturing process.
(5) The strip is used for manufacturing the lead wire bracket.
And thirdly, fixing the chip on a lead support, leading out a lead on the chip, and packaging the chip by using a packaging material.
The manufacturing process of the invention comprises the following steps: the alloy raw materials are No. 1 electrolytic copper, copper-iron intermediate alloy, copper-boron intermediate alloy, sodium simple substance, titanium simple substance and mixed rare earth, and are smelted by adopting a medium-frequency induction furnace.
The casting process after melting the raw materials is preferably continuous casting, and may be semi-continuous casting. In the casting process, cooling is carried out at a cooling speed of more than 80 ℃/min within the temperature range from the liquidus to 380 ℃, and when the cooling speed is lower than 80 ℃/min, element segregation will occur, which brings adverse effect on the subsequent hot rolling processability and causes reduction of production efficiency; controlling the cooling speed, preferably the temperature range from the liquidus temperature to 380 ℃; at a temperature of 380 ℃ or lower, excessive segregation of the alloying elements does not occur due to a change in the length of the cooling time during casting.
After melt casting, hot working is performed. The heating temperature of the hot working is in the range of 900-1000 ℃, and if the temperature exceeds the upper limit temperature, overheating will occur, hot rolling cracking is caused, and the production efficiency is reduced. When hot rolling is carried out at a temperature of 900 to 1000 ℃, micro segregation and cast structure will disappear, and a rolled strip with uniform structure can be obtained within the content range of the elements such as Fe, Ti, B and the like, and the more ideal hot rolling temperature is about 950 ℃. The grain size after hot rolling is 50 μm or less and the grain size is more than 50 μm, and the range of conditions for the subsequent cold rolling reduction ratio and annealing becomes narrow, thereby deteriorating the properties.
After the hot rolling, surface cutting is performed as necessary, and thereafter, cold rolling and annealing at a temperature in the range of 300 to 600 ℃ are repeated. The purpose of controlling the grain size and precipitated phase (the grain diameter is less than 50 mu m) is achieved by adopting two-stage continuous annealing of high temperature and low temperature. When the temperature is lower than 300 ℃, the time required for controlling the tissue performance is longer; the crystal grains become coarse in a short time at a temperature exceeding 600 ℃. If the crystal grains after annealing are larger than 50 μm, mechanical properties such as tensile strength and workability are deteriorated. Thus, the crystal grain diameter is made smaller than 50 μm, more preferably, smaller than 25 μm.
The obtained annealed material is subjected to cold rolling to a thickness variation of 40% or more, and further subjected to low-temperature annealing at 420 ℃ or lower to obtain a copper-iron alloy having a tensile strength of 600MBa or more, a hardness of 180Hv or more, an electric conductivity of 66% IACS or more, and an elongation of 7.0% or more. If the cold rolling reduction ratio is less than 40%, the strength due to work hardening is insufficient, and the mechanical properties cannot be completely improved. Therefore, the desirable working ratio is 50% or more. In order to further improve the characteristics of the alloy, such as tensile strength, hardness, elongation, and particularly electrical conductivity, a low-temperature annealing process is necessary, and the material is softened in a short time at a temperature higher than 420 ℃ due to an excessively large heat capacity, and the characteristics of the interior of the material are likely to be uneven regardless of the batch type or continuous type. Therefore, the low temperature annealing condition should be 420 ℃ or lower.
Example (b):
Cu-Fe alloy Nos. 1 to 6 having compositions (wt%) shown in Table 1,
TABLE 1
It is worth noting that during the smelting process of the alloy, each element has different burning loss degrees, and the burning loss rate Fe: 1-2%, Ti: 1-3%, B: 2-5%, Na: 20-30%, Mo: 30-50%; the topping should be given complementary during the course of the ingredients. Firstly adding electrolytic copper and copper-iron intermediate alloy when smelting starts, heating, adding 1/3 copper-boron intermediate alloy after the intermediate alloy is molten, and keeping the temperature for 1-3 min; then adding titanium, sodium and rare earth, preserving heat for 3-5 min after the titanium, sodium and rare earth are melted, then adding the residual 2/3 of copper-boron intermediate alloy, preserving heat for 10min after full melting, and casting; casting a 70X 180X 1000(mm) cast slab by using a small vertical semi-continuous casting machine, and performing primary cooling by using a slab mold and secondary cooling by using water spraying so that the cooling rate in the temperature range from the liquidus to 380 ℃ is more than 80 ℃/min. Thereafter, each cast slab was heated at a temperature ranging from 900 to 1000 ℃, hot rolled so that the thickness thereof was 6mm, and hot rolling workability was evaluated from cracks on the surface and edges. After acid washing, the test material in which no crack was observed under an optical microscope of 50 times was evaluated as good, and the test material in which a crack was observed was evaluated as poor. The finishing temperature of hot rolling was 700 ℃ and the crystal grain size was controlled to about 50 μm by quenching. Then cold rolling is carried out to enable the thickness of the steel sheet to be 1mm, two-stage annealing treatment is carried out within the temperature range of 300-600 ℃, second-phase particles are precipitated to improve the performance, then cold rolling is carried out to enable the thickness of the steel sheet to be 0.5mm, and finally low-temperature annealing is carried out.
And (3) cutting a test piece from the obtained strip, and measuring the tensile strength, the hardness, the elongation and the conductivity, wherein all performance indexes are measured according to the national standard. The results obtained above are reported in table 2.
TABLE 2
Obviously, the copper-iron alloy has good hot workability, is beneficial to production and manufacture, particularly has the characteristics of excellent tensile strength, hardness, elongation, conductivity and the like, and is the best material for producing electric and electronic components such as lead frames and the like; the Cu-Fe alloy belongs to the Cu-Fe alloy C194.
The technical solutions of the present invention are further described by the specific embodiments, and the examples given are only application examples, which should not be construed as a limitation to the scope of the claims of the present invention.
Claims (5)
1. A method of manufacturing a semiconductor device comprising manufacturing an integrated circuit and packaging the integrated circuit, wherein the manufacturing of the integrated circuit comprises the steps of:
providing a chip;
(II) manufacturing a lead support, wherein the manufacturing of the lead support comprises the following steps:
(1) firstly, melting the main material and the auxiliary material at 1250-1350 ℃, injecting the melted main material and the auxiliary material into a blank mold, cooling the molten main material and the auxiliary material at a cooling speed of more than 80 ℃/min within the temperature range from liquidus temperature to 380 ℃, and controlling the alloy components and the content of Fe to be 2.0-2.6 wt%, Ti to be 0.05-0.1 wt%, B to be 0.01-0.03 wt%, Na to be 0-0.05 wt%, Mo to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities in the manufacturing process; the main material is No. 1 electrolytic copper, and the auxiliary materials are copper-iron intermediate alloy, copper-boron intermediate alloy, simple substance titanium, simple substance sodium and molybdenum;
(2) carrying out hot rolling and rolling on the obtained casting blank at a heating temperature of below 1000 ℃, wherein the component content of Fe is controlled to be 2.0-2.6 wt%, Ti is controlled to be 0.05-0.1 wt%, B is controlled to be 0.01-0.03 wt%, Na is controlled to be 0-0.05 wt%, Mo is controlled to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities are controlled in the manufacturing process;
(3) repeatedly performing cold rolling and two-stage continuous annealing at 300-600 ℃ on the hot rolled strip, wherein the content of Fe is controlled to be 2.0-2.6 wt%, Ti is controlled to be 0.05-0.1 wt%, B is controlled to be 0.01-0.03 wt%, Na is controlled to be 0-0.05 wt%, Mo is controlled to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities are controlled in the manufacturing process;
(4) performing cold rolling and rolling to enable the thickness variation to reach more than 40%, and performing low-temperature annealing at the temperature of below 420 ℃ to obtain a finished strip, wherein the component contents of Fe are controlled to be 2.0-2.6 wt%, Ti is controlled to be 0.05-0.1 wt%, B is controlled to be 0.01-0.03 wt%, Na is controlled to be 0-0.05 wt%, Mo is controlled to be 0.01-1.5 wt%, and the balance of Cu and inevitable impurities are controlled in the manufacturing process;
(5) manufacturing a lead wire bracket by adopting the strip material;
and thirdly, fixing the chip on a lead support, leading out a lead on the chip, and packaging the chip by using a packaging material.
2. The manufacturing method according to claim 1, wherein the grain diameter of the strip is controlled to be less than 50 μm during the hot rolling and rolling process of step (2).
3. The manufacturing method according to claim 1, wherein the grain diameter of the strip is controlled to be less than 50 μm during the cold rolling annealing process in the step (3).
4. The manufacturing method according to claim 1, wherein the copper-iron alloy obtained in step (4) further contains at least one or more elements selected from the group consisting of As, Sb, Bi, Co and Ni in a total amount of less than 0.05 wt%.
5. The method according to claim 4, wherein the copper-iron alloy has a tensile strength of 600MPa or more, a hardness of 180HV or more, an electrical conductivity of 66% IACS or more, and an elongation of 7.0% or more.
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| CN1940104A (en) * | 2006-08-16 | 2007-04-04 | 苏州有色金属加工研究院 | Copper alloy for lead-wire frame and its production |
| CN100469923C (en) * | 2006-09-27 | 2009-03-18 | 苏州有色金属加工研究院 | High temperature copper alloy for lead frame and its making process |
| CN101914701A (en) * | 2010-08-26 | 2010-12-15 | 中铝华中铜业有限公司 | Lead frame material and method for processing strip made of same |
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| JP4660735B2 (en) * | 2004-07-01 | 2011-03-30 | Ｄｏｗａメタルテック株式会社 | Method for producing copper-based alloy sheet |
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| CN1940104A (en) * | 2006-08-16 | 2007-04-04 | 苏州有色金属加工研究院 | Copper alloy for lead-wire frame and its production |
| CN100469923C (en) * | 2006-09-27 | 2009-03-18 | 苏州有色金属加工研究院 | High temperature copper alloy for lead frame and its making process |
| CN101914701A (en) * | 2010-08-26 | 2010-12-15 | 中铝华中铜业有限公司 | Lead frame material and method for processing strip made of same |
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