CN102982812A - Method for producing magnetic head wafer of hard disk - Google Patents
Method for producing magnetic head wafer of hard disk Download PDFInfo
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- CN102982812A CN102982812A CN2012105095475A CN201210509547A CN102982812A CN 102982812 A CN102982812 A CN 102982812A CN 2012105095475 A CN2012105095475 A CN 2012105095475A CN 201210509547 A CN201210509547 A CN 201210509547A CN 102982812 A CN102982812 A CN 102982812A
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Abstract
The invention discloses a method for producing a magnetic head wafer of a hard disk. The key points of the technical scheme of the invention lie in that the method for producing the magnetic head wafer of the hard disk comprises the steps as follows: (1) an adhesive layer is sputtered on the wafer, a seed layer is further sputtered on the wafer, then photoresist is coated on the wafer, a needed graphic is exposed and developed, and the wafer is dried; (2) three alloy layers are electroplated in sequence, wherein the front two layers are alloy layers difficult to oxidize or corrode, the wafer is washed by using deionized water to remove the photoresist, and etched by using argon ion beams to remove the seed layer outside the needed graphic; and (3) photoresist is coated to protect a needed metal area, needless metal is corroded by using an acid solution, Al2O3 crystals are further sputtered on the wafer, the wafer is ground to expose the alloy layers, and then the magnetic head wafer of the hard disk is formed. The method for producing the magnetic head wafer of the hard disk by adopting a manner of electroplating multiple layers of alloy step by step has the advantages of simple working procedure step, short working procedure time, little control parameter, and the like, so that great economic benefits can be brought to an enterprise.
Description
Technical field
The present invention relates to the technical field of plating in the production of hard disc magnetic head chip design, be specifically related to a kind of production method of hard disc magnetic head wafer.
Background technology
Electroplating work procedure accounts for very large proportion in the hard disc magnetic head wafer manufacture, and related plating kind mainly contains Ni-Fe plating, Au plating, Cu plating, Co-Ni-Fe plating, Fe-Ni-Co plating, Fe-Ni plating etc.The wafer electroplating cycle is longer, if bad delivery will affect the competitive power of manufacturing enterprise greatly.
The step that common single-layer metal is electroplated is roughly: sputter adhesion layer on wafer, sputter one deck Seed Layer → coating photoresist → expose and the required figure → oven dry of developing again, make photoresist typing → plating → deionization clean → take off except photoresist → Ar Ion Beam Etching remove the Seed Layer the figure of wanting; Then protect with photoresist desired metal area → erode unwanted metal → sputter Al with acid solution
2O
3Crystal → grinding is to expose alloy-layer.Electroplate if carry out the multilayer alloy-layer, repeat above each step and get final product.Yet, so whole process operation more complicated, the production cycle is longer, and benefit is lower.
Summary of the invention
The technical matters that the present invention solves has provided a kind of production method of hard disc magnetic head wafer, and the operation that the method adopts substep to electroplate greatly reduces production stage, has shortened the production cycle, has improved economic benefit.
Technical scheme of the present invention is: a kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, then sputter one deck Seed Layer is coated with photoresist again, expose and the required figure that develops, the oven dry; (2), successively carry out the plating of three-layer alloy layer, wherein before the alloy-layer of the awkward oxidation of two-layer alloy-layer or difficult corrosion, washed with de-ionized water takes off except photoresist, Ar Ion Beam Etching is removed the Seed Layer outside institute's figure of wanting; (3), the coating photoresist protect desired metal area, erode unwanted metal with acid solution, again sputter Al
2O
3Crystal grinds and namely forms the hard disc magnetic head wafer to expose alloy-layer.
The thickness of coating photoresist is 5.0 ~ 5.5 μ m in the step described in the production method of hard disc magnetic head wafer of the present invention (1).
Three-layer alloy layer in the step described in the production method of hard disc magnetic head wafer of the present invention (2) is followed successively by Ni-Fe layer, Ni-P layer and Fe-Co-Ni layer or Ni-Fe layer, Ni-P layer and Co-Ni-Fe layer or Ni-Fe layer, Ni-Pd layer and Co-Ni-Fe layer or Ni-Fe layer, Ni-Pd layer and Fe-Co-Ni layer.
In the step described in the production method of hard disc magnetic head wafer of the present invention (2) in the electroplating process of alloy-layer acid activation solution be: the volume that contains mass concentration in the 10L acid activation solution and be 37% hydrochloric acid is 500ml, deionized water 10L and lauryl sodium sulfate 2.0g, the acid activation time is 1min, and the difference according to the plating alloy layer in the electroplating process arranges different plating conditions.
The thickness of coating photoresist is 6.0 ~ 6.5 μ m in the step described in the production method of hard disc magnetic head wafer of the present invention (3).
Sputter Al in the step described in the production method of hard disc magnetic head wafer of the present invention (3)
2O
3The thickness of crystal is 7.0 ~ 7.5 μ m.
Milling time in the step described in the production method of hard disc magnetic head wafer of the present invention (3) is 30min.
Suitably improved the concentration of surfactant in the electroplate liquid in the implementation process of the present invention, to reduce the surface tension of liquid; Under the prerequisite of the magnetic performance that does not affect alloy or stirring in the scope that alloying component allows, suitably reduce rate of deposition in addition.
The present invention adopts the multilayer alloy to electroplate step by step the method for producing the hard disc magnetic head wafer, have the advantages such as process is simple, activity time short, the control parameter is few with respect to common single layer alloy multistep circulation plating, therefore can bring huge economic benefit for enterprise.
Embodiment
The embodiment of form is described in further details foregoing of the present invention by the following examples, but this should be interpreted as that the scope of the above-mentioned theme of the present invention only limits to following embodiment.All technology that realizes based on foregoing of the present invention all belong to scope of the present invention.
Embodiment 1
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.0 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-P and Fe-Co-Ni three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-P alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 40 ° of C ± 0.2 ° C, and the pH value is 3.34 ± 0.02; Fe-Ni-Co alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.05 ± 0.01g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 14.0 ± 0.3L/min, temperature of electroplating solution is 19 ° of C ± 0.2 ° C, and the pH value is 3.10 ± 0.02; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.0 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.0 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 2
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.5 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-P and Fe-Co-Ni three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-P alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 40 ° of C ± 0.2 ° C, and the pH value is 3.34 ± 0.02; Fe-Ni-Co alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.05 ± 0.01g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 14.0 ± 0.3L/min, temperature of electroplating solution is 19 ° of C ± 0.2 ° C, and the pH value is 3.10 ± 0.02; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.5 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.5 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 3
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.0 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-P and Co-Ni-Fe three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-P alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 40 ° of C ± 0.2 ° C, and the pH value is 3.34 ± 0.02; Co-Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.01 ± 0.005g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 11.5 ± 0.5L/min, temperature of electroplating solution is 22 ° of C ± 1 ° C, and the pH value is 3.70 ± 0.03; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.0 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.0 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 4
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.5 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-P and Co-Ni-Fe three-layer alloy layer, acid activation solution is in the electroplating process: mass concentration is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-P alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 40 ° of C ± 0.2 ° C, and the pH value is 3.34 ± 0.02; Co-Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.01 ± 0.005g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 11.5 ± 0.5L/min, temperature of electroplating solution is 22 ° of C ± 1 ° C, and the pH value is 3.70 ± 0.03; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.5 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.5 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 5
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.0 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-Pd and Co-Ni-Fe three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-Pd alloy plating liquid: the adjuvant mass concentration is 0.10L/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 8.30 ± 0.02; Co-Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.01 ± 0.005g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 11.5 ± 0.5L/min, temperature of electroplating solution is 22 ° of C ± 1 ° C, and the pH value is 3.70 ± 0.03; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.0 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.0 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 6
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.5 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-Pd and Co-Ni-Fe three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-Pd alloy plating liquid: the adjuvant mass concentration is 0.10L/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 8.30 ± 0.02; Co-Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.01 ± 0.005g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 11.5 ± 0.5L/min, temperature of electroplating solution is 22 ° of C ± 1 ° C, and the pH value is 3.70 ± 0.03; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.5 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.5 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 7
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.0 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-Pd and Fe-Co-Ni three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-Pd alloy plating liquid: the adjuvant mass concentration is 0.10L/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 8.30 ± 0.02; Fe-Ni-Co alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.05 ± 0.01g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 14.0 ± 0.3L/min, temperature of electroplating solution is 19 ° of C ± 0.2 ° C, and the pH value is 3.10 ± 0.02; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.0 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.0 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
Embodiment 8
A kind of production method of hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, sputter one deck Seed Layer again, then coating thickness is the photoresist of 5.5 μ m, exposes and the required figure that develops oven dry; (2), successively electroplated Ni-Fe, Ni-Pd and Fe-Co-Ni three-layer alloy layer, acid activation solution is in the electroplating process: massfraction is that the volume of 37% hydrochloric acid is 500ml in the 10L acid activation solution, deionized water 10L, lauryl sodium sulfate 2.0g, soak time are 1min; The plating condition is: Ni-Fe alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 1.5g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 2.68 ± 0.02; Ni-Pd alloy plating liquid: the adjuvant mass concentration is 0.10L/L, the distance of wafer and anode is 25 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 58 ± 2 times/min, the electroplate liquid flow velocity is 10.5 ± 0.5L/min, temperature of electroplating solution is 25 ° of C ± 0.2 ° C, and the pH value is 8.30 ± 0.02; Fe-Ni-Co alloy plating liquid: the mass concentration of sodium dodecylsulphonate is 0.05 ± 0.01g/L, the distance of wafer and anode is 30 ± 0.2cm, the distance of stirring handle and wafer is 1.0 ± 0.1cm, stirring rate is 52 ± 2 times/min, the electroplate liquid flow velocity is 14.0 ± 0.3L/min, temperature of electroplating solution is 19 ° of C ± 0.2 ° C, and the pH value is 3.10 ± 0.02; Washed with de-ionized water takes off except photoresist, and Ar Ion Beam Etching is removed institute's figure of wanting Seed Layer outward; (3), coating thickness is that the photoresist of 6.5 μ m is protected desired metal area, corrodes unwanted metal with acid solution, sputter thickness is the Al of 7.5 μ m again
2O
3Crystal grinds 30min and namely forms the magnetic head wafer to expose alloy-layer.
The comparison of electroplating with substep is electroplated in the circulation of table 1 individual layer multistep
Table 1 is electroplated the comparison of electroplating step by step with the present invention for common individual layer multistep circulation, adopts as can be seen from Table 1 substep electric plating method process to greatly reduce, as: only need carry out a Seed Layer sputter, an acid corrosion, an Al
2O
3The crystal sputter reaches once grinding etc.The time that is directly used in the production and processing product when adopting common individual layer multistep circulation to electroplate only has 943min, and the stand-by period is 3900min; Adopt the present invention to electroplate step by step rear production and processing time decreased to 468min, and the stand-by period reduce to 1604min, comprehensively relatively can save 46.2h, is approximately two day time.If the single monthly average of enterprise is produced 2000 wafer at least, every wafer is worth at least 20000 dollars of meters, production cycle reduces two days then can increase about 2,600,000 dollars of the output value every year, if the electroplating work procedure in the whole wafer production processes all adopts production method of the present invention as much as possible, then can bring huge economic benefit to enterprise.This shows that adopting the substep electrochemical plating is to shorten the production cycle, one of the very effective method of increasing economic efficiency.
Claims (7)
1. the production method of a hard disc magnetic head wafer is characterized in that may further comprise the steps: (1), on wafer the sputter adhesion layer, then sputter one deck Seed Layer is coated with photoresist again, exposes and the required figure that develops oven dry; (2), successively carry out the plating of three-layer alloy layer, wherein before the alloy-layer of the awkward oxidation of two-layer alloy-layer or difficult corrosion, washed with de-ionized water takes off except photoresist, Ar Ion Beam Etching is removed the Seed Layer outside institute's figure of wanting; (3), the coating photoresist protect desired metal area, erode unwanted metal with acid solution, again sputter Al
2O
3Crystal grinds and namely forms the hard disc magnetic head wafer to expose alloy-layer.
2. the production method of hard disc magnetic head wafer according to claim 1 is characterized in that: the thickness of coating photoresist is 5.0 ~ 5.5 μ m in the described step (1).
3. the production method of hard disc magnetic head wafer according to claim 1, it is characterized in that: the three-layer alloy layer in the described step (2) is followed successively by Ni-Fe layer, Ni-P layer and Fe-Co-Ni layer or Ni-Fe layer, Ni-P layer and Co-Ni-Fe layer or Ni-Fe layer, Ni-Pd layer and Co-Ni-Fe layer or Ni-Fe layer, Ni-Pd layer and Fe-Co-Ni layer.
4. the production method of hard disc magnetic head wafer according to claim 1, it is characterized in that: in the described step (2) in the electroplating process of alloy-layer acid activation solution be: the volume that contains mass concentration in the 10L acid activation solution and be 37% hydrochloric acid is 500ml, deionized water 10L and lauryl sodium sulfate 2.0g, the acid activation time is 1min, and the difference according to the plating alloy layer in the electroplating process arranges different plating conditions.
5. the production method of hard disc magnetic head wafer according to claim 1 is characterized in that: the thickness of coating photoresist is 6.0 ~ 6.5 μ m in the described step (3).
6. the production method of hard disc magnetic head wafer according to claim 1 is characterized in that: sputter Al in the described step (3)
2O
3The thickness of crystal is 7.0 ~ 7.5 μ m.
7. the production method of hard disc magnetic head wafer according to claim 1, it is characterized in that: the milling time in the described step (3) is 30min.
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