CN102976323A - Recovery technology of waste mortar used for solar silicon wafer cutting - Google Patents
Recovery technology of waste mortar used for solar silicon wafer cutting Download PDFInfo
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- CN102976323A CN102976323A CN2012104628701A CN201210462870A CN102976323A CN 102976323 A CN102976323 A CN 102976323A CN 2012104628701 A CN2012104628701 A CN 2012104628701A CN 201210462870 A CN201210462870 A CN 201210462870A CN 102976323 A CN102976323 A CN 102976323A
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- waste mortar
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- silicon carbide
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- solar silicon
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Abstract
The invention discloses a recovery technology of waste mortar used for solar silicon wafer cutting. Steps of water wash and centrifuge wash are added after a step of centrifuge wash after alkali wash, and therefore content of Na2SiO3 in silicon carbide is lowered effectively. In the step of water wash, Na2SiO3 is dissolved in water. Na2SiO3 and the silicon carbide are separated in the step of centrifuge wash. Therefore, the content of Na2SiO3 in the silicon carbide is reduced, and content of SiC in recycling sand is improved.
Description
Technical field
The present invention relates to a kind of recovery technique of the waste mortar for solar silicon wafers cutting, belong to the photovoltaic field.
Background technology
In the photovoltaic industry, mortar is larger consumptive material in the silicon chip cutting, and the composition of mortar is mainly silicon carbide and (is commonly called as silicon carbide, SiC) with a small amount of silicon, will causes the very large wasting of resources and environmental pollution if use once just to discard.After carrying mortar and carry out silicon chip cutting by steel wire, be mixed with a large amount of silica flours in the mortar, and the wearing and tearing of the silicon carbide of part are broken, the effect of effective cutting can't recur, sneak into foreign matter such as broken silicon wafers etc. in the cutting process simultaneously so that the necessary regular replacing of mortar, but comprise still that wherein a large amount of performances there is no SiC particle and the suspension of large change, therefore reclaim the trend that mortar becomes the PV industry.The content of the silicon carbide of the explained hereafter of existing recovery sand is about 96% substantially, can not satisfy the quality requirements that reclaims sand.
Summary of the invention
The object of the invention provides a kind of recovery technique of the waste mortar for solar silicon wafers cutting, adds the step of washing and eccentric cleaning after the eccentric cleaning step after the alkali cleaning, can effectively reduce Na in the silicon carbide
2SiO
3Content; In the step of washing, Na
2SiO
3Soluble in water, the step of eccentric cleaning is with Na
2SiO
3Separate with silicon carbide, thereby reduce Na
2SiO
3Content in silicon carbide improves the content that reclaims SiC in the sand.
A kind of recovery technique of the waste mortar for solar silicon wafers cutting, with the NaOH solution alkali cleaning 4.5-5.5h of waste mortar with the 5-7% of 4-6 times of weight, eccentric cleaning 0.5h, rotating speed 60-70r/min, washing 1.8-2.2h, continue eccentric cleaning 0.5h, rotating speed 60-70r/min is with the H of the 1.5-2.5% of 4-6 times of waste mortar weight
2SO
4Solution pickling 4.5-5.5h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 70-80r/min.
The chemical reaction that mainly occurs during the mortar alkali cleaning is: Si+2NaOH+H
2O=Na
2SiO
3+ 2H
2↑; Because Na
2SiO
3Have very large viscosity, also have part to be attached to silicon carbide after the eccentric cleaning, flowing into reacts in the pickling tub generates indissoluble solution material orthosilicic acid (Na
2SiO
3+ H
2SO
4+ H
2O=Na
2SO
4+ H
4SiO4 ↓) because the orthosilicic acid that generates is the same with silicon carbide, all be the indissoluble material, follow-up rinsing can only be removed part Fe
2O
3, metal ion and uncombined carbon, little to removing the orthosilicic acid effect, cause carborundum content on the low side.
The present invention adds the step of washing and eccentric cleaning after the eccentric cleaning step after the alkali cleaning, can effectively reduce Na in the silicon carbide
2SiO
3Content.In the step of washing, Na
2SiO
3Soluble in water, the step of eccentric cleaning is with Na
2SiO
3Separate with silicon carbide, thereby reduce Na
2SiO
3Content in silicon carbide makes the content that reclaims SiC in the sand more than 98%.
Embodiment:
Embodiment 1:
A kind of recovery technique of the waste mortar for solar silicon wafers cutting is with 5% the NaOH solution alkali cleaning 4.5h of waste mortar with 4 times of weight, eccentric cleaning 0.5h, rotating speed 60r/min, washing 1.8h continues eccentric cleaning 0.5h, rotating speed 60r/min is with 1.5% H of 4 times of waste mortar weight
2SO
4Solution pickling 4.5h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 70r/min.The content that finally is recycled silicon carbide in the sand is 98.2%.
Embodiment 2:
A kind of recovery technique of the waste mortar for solar silicon wafers cutting is with 6% the NaOH solution alkali cleaning 5.0h of waste mortar with 5 times of weight, eccentric cleaning 0.5h, rotating speed 65r/min, washing 2.0h continues eccentric cleaning 0.5h, rotating speed 65r/min is with 2.0% H of 5 times of waste mortar weight
2SO
4Solution pickling 5.0h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 75r/min.The content that finally is recycled silicon carbide in the sand is 98.9%.
Embodiment 3:
A kind of recovery technique of the waste mortar for solar silicon wafers cutting is with 7% the NaOH solution alkali cleaning 5.5h of waste mortar with 6 times of weight, eccentric cleaning 0.5h, rotating speed 70r/min, washing 2.2h continues eccentric cleaning 0.5h, rotating speed 70r/min is with 2.5% H of 6 times of waste mortar weight
2SO
4Solution pickling 5.5h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 80r/min.The content that finally is recycled silicon carbide in the sand is 98.6%.
Embodiment 4:
A kind of recovery technique of the waste mortar for solar silicon wafers cutting is with 4% the NaOH solution alkali cleaning 4.0h of waste mortar with 3 times of weight, eccentric cleaning 0.5h, rotating speed 50r/min, washing 1.5h continues eccentric cleaning 0.5h, rotating speed 50r/min is with 1.0% H of 3 times of waste mortar weight
2SO
4Solution pickling 4.0h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 65r/min.The content that finally is recycled silicon carbide in the sand is 97.0%.
Embodiment 5:
A kind of recovery technique of the waste mortar for solar silicon wafers cutting is with 8% the NaOH solution alkali cleaning 6.0h of waste mortar with 7 times of weight, eccentric cleaning 0.5h, rotating speed 75r/min, washing 2.5h continues eccentric cleaning 0.5h, rotating speed 75r/min is with 3.0% H of 7 times of waste mortar weight
2SO
4Solution pickling 6.0h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 85r/min.The content that finally is recycled silicon carbide in the sand is 97.4%.
Comparative Examples 1:
Usually the recovery technique of the waste mortar of solar silicon wafers cutting, with 6% the NaOH solution alkali cleaning 5.0h of waste mortar with 5 times of weight, eccentric cleaning 0.5h, rotating speed 65r/min is with 2.0% H of 5 times of waste mortar weight
2SO
4Solution pickling 5.0h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 75r/min.The content that finally is recycled silicon carbide in the sand is 96.7%.
Claims (2)
1. recovery technique that is used for the waste mortar of solar silicon wafers cutting, it is characterized in that: with the NaOH solution alkali cleaning 4.5-5.5h of waste mortar with the 5-7% of 4-6 times of weight, eccentric cleaning 0.5h, rotating speed 60-70r/min, washing 1.8-2.2h, continue eccentric cleaning 0.5h, rotating speed 60-70r/min is with the H of the 1.5-2.5% of 4-6 times of waste mortar weight
2SO
4Solution pickling 4.5-5.5h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 70-80r/min.
2. the recovery technique of a kind of waste mortar for solar silicon wafers cutting as claimed in claim 1, it is characterized in that: a kind of recovery technique of the waste mortar for solar silicon wafers cutting, with 6% the NaOH solution alkali cleaning 5.0h of waste mortar with 5 times of weight, eccentric cleaning 0.5h, rotating speed 65r/min, washing 2.0h continues eccentric cleaning 0.5h, rotating speed 65r/min is with 2.0% H of 5 times of waste mortar weight
2SO
4Solution pickling 5.0h, rinsing 1h, centrifuge dripping 0.5h, rotating speed 75r/min.
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CN2012104628701A CN102976323A (en) | 2012-11-16 | 2012-11-16 | Recovery technology of waste mortar used for solar silicon wafer cutting |
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CN2012104628701A CN102976323A (en) | 2012-11-16 | 2012-11-16 | Recovery technology of waste mortar used for solar silicon wafer cutting |
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CN102976323A true CN102976323A (en) | 2013-03-20 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104528904A (en) * | 2014-12-26 | 2015-04-22 | 江南大学 | Composite iron silicate activated carbon flocculant and preparation method thereof |
CN105858602A (en) * | 2016-04-08 | 2016-08-17 | 北京科技大学 | Polycrystalline silicon cutting waste material treatment method |
Citations (4)
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---|---|---|---|---|
CN101474511A (en) * | 2008-12-17 | 2009-07-08 | 西安交通大学 | Process for recovering polyethylene glycol and silicon carbide in waste mortar from silicon wafer wire cutting |
US20100284885A1 (en) * | 2009-05-11 | 2010-11-11 | National Taiwan University | Recovery Of Silicon And Silicon Carbide Powder From Kerf Loss Slurry Using Particle Phase-Transfer Method |
CN102031193A (en) * | 2010-11-02 | 2011-04-27 | 薛荣秀 | Method for recovering silicon carbide and polyglycol cutting solution from silicon slice cutting waste mortar |
CN101817526B (en) * | 2010-04-08 | 2012-06-20 | 浙江源盛硅晶材料有限公司 | Method for recovering polyethylene glycol and silicon carbide from silicon crystal cutting waste liquid |
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2012
- 2012-11-16 CN CN2012104628701A patent/CN102976323A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101474511A (en) * | 2008-12-17 | 2009-07-08 | 西安交通大学 | Process for recovering polyethylene glycol and silicon carbide in waste mortar from silicon wafer wire cutting |
US20100284885A1 (en) * | 2009-05-11 | 2010-11-11 | National Taiwan University | Recovery Of Silicon And Silicon Carbide Powder From Kerf Loss Slurry Using Particle Phase-Transfer Method |
CN101817526B (en) * | 2010-04-08 | 2012-06-20 | 浙江源盛硅晶材料有限公司 | Method for recovering polyethylene glycol and silicon carbide from silicon crystal cutting waste liquid |
CN102031193A (en) * | 2010-11-02 | 2011-04-27 | 薛荣秀 | Method for recovering silicon carbide and polyglycol cutting solution from silicon slice cutting waste mortar |
Non-Patent Citations (1)
Title |
---|
曹春梅等: "线切割废砂浆资源化利用研究技术", 《化工进展》, vol. 31, 31 July 2012 (2012-07-31), pages 496 - 500 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104528904A (en) * | 2014-12-26 | 2015-04-22 | 江南大学 | Composite iron silicate activated carbon flocculant and preparation method thereof |
CN105858602A (en) * | 2016-04-08 | 2016-08-17 | 北京科技大学 | Polycrystalline silicon cutting waste material treatment method |
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Application publication date: 20130320 |