CN102969395A - Method for improving cracking resistance of silicon chip - Google Patents
Method for improving cracking resistance of silicon chip Download PDFInfo
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- CN102969395A CN102969395A CN2012104268462A CN201210426846A CN102969395A CN 102969395 A CN102969395 A CN 102969395A CN 2012104268462 A CN2012104268462 A CN 2012104268462A CN 201210426846 A CN201210426846 A CN 201210426846A CN 102969395 A CN102969395 A CN 102969395A
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Abstract
The invention provides a method for improving cracking resistance of a silicon chip and belongs the technical field of photovoltaic materials. The method is characterized in that the silicon chip is placed in an argon or nitrogen atmosphere, heated to 300-900 DEG C and then subjected to heat preservation for 0.2-4 hours, and then the silicon chip is cooled at the speed lower than 7 DEG C/min to a room temperature and then discharged from a furnace. The method is simple in operation, low in costs and capable of greatly improving cracking resistance of the silicon chip and particularly improving the cracking resistance to diamonds which are used for cutting the silicon chip, and the bending fracture strain of the silicon chip can be improved by over 90%; simultaneously, minority carrier lifetime of polycrystalline silicon chips is obviously prolonged; and chip cracking rates during silicon chip follow-up processing and solar battery manufacturing processes are reduced, and solar battery production costs are finally reduced.
Description
Technical field
The invention belongs to the photovoltaic material technical field.Be particularly related to solar cell production and the modification of silicon chip.
Technical background
Solar photovoltaic electric power based on the crystal silicon chip solar cell, wherein is the polysilicon chip solar cell more than 50% more than 85%.Required polysilicon chip is obtained by the polycrystalline silicon ingot casting cutting of directional solidification.The present industrial two kinds of silicon chip cutting techniques that have: the silicon carbide abrasive mortar cooperates steel wire cutting (hereinafter to be referred as the mortar cutting) to cut (hereinafter to be referred as diamond cut) with the solidified diamond fret saw.The thickness of silicon chip is 0.16～0.22 mm, is attenuate gradually with the technical development general trend.Ubiquity die crack loss problem, particularly polysilicon chip in the photovoltaic industry.Reflect generally that according to industry the fragment rate of mortar cutting silicon wafer monocrystalline silicon piece is generally 0.3 ~ 1.0%, polysilicon chip then reaches 1.5 ~ 4.5%.We adopt three power bendings method that the bending breaking strain of two kinds of silicon chips has been carried out measuring statistics, find monocrystalline silicon piece bending breaking strain average out to 0.15%, and polysilicon chip then is 0.11%.Can see that silicon chip bending breaking strain has very significant impact to its fragment rate.
The production application of diamond cut silicon chip just just begins at present, although industry not yet draws its fragment rate horizontal data, but existing bending fracture test shows, the diamond cut polysilicon chip is perpendicular to the bending breaking strain average out to 0.065% on the line of cut direction, be starkly lower than mortar cutting polysilicon chip (0.11%), its fragment rate level will be higher; Also there is Similar Problems in the diamond cut monocrystalline silicon piece on perpendicular to the line of cut direction.The diamond cut silicon chip technology but fragment rate higher may restrict its development, thereby improve its anti-fragmentation performance particularly important because it is efficient, environmental protection, the little advantage of silicon chip surface damage are expected to apply on a large scale.。
Solar cell is with up to now, and relevant silicon chip manufacturing enterprise constantly makes great efforts to reduce the silicon chip fragment rate by relevant management link with solar cell growth enterprise, improves the technology report that improves the silicon chip anti-fragmentation performance but there is not yet any active.
Summary of the invention
The method that the purpose of this invention is to provide a kind of raising silicon chip anti-fragmentation performance of lower cost particularly improves the method for diamond cut silicon chip anti-fragmentation performance.
The method of raising silicon chip anti-fragmentation performance of the present invention is achieved through the following technical solutions.
Silicon chip is placed argon gas or nitrogen atmosphere, be heated to 300～900 ℃, be incubated 0.2～4 hour, then, with the speed that is lower than 7 ℃/min silicon chip is cooled to room temperature and comes out of the stove.
In the said process, under 300～＜600 ℃ condition, also silicon chip can be placed air atmosphere.
The present invention is based on for heat treatment a large amount of system experimentations of the impact of silicon chip breaking strain are researched and proposed.Research is found, not only at high temperature more than 900 ℃, be low to moderate 300 ℃ than large-temperature range in to silicon chip heat tracing and Slow cooling, the breaking strain of silicon chip is significantly improved, particularly to the diamond cut silicon chip, its perpendicular to the line of cut direction on effect very remarkable; Research also shows, is improving heat treatment temperature more than 900 ℃, can't bring better treatment effect.Fig. 1 illustrates two kinds of silicon chips 900 ℃ of lower heat treatment experiment results; Fig. 2 illustrates under the series of temperature heat treatment experiment result to diamond cut polysilicon silicon chip.
The technology of the present invention effect is: after the inventive method was processed, the bending breaking strain of silicon chip obviously improved.The degree that improves take the diamond cut silicon chip than the mortar cutting silicon wafer for greatly; To be parallel to the line of cut direction perpendicular to the line of cut direction as large.To the polysilicon chip of diamond cut, on perpendicular to the line of cut direction, process its bending breaking strain through the present invention and can improve more than 90%.
The result that silicon chip bending breaking strain improves will make its anti-fragmentation performance improve, and make fragment rate reduction in silicon chip subsequent treatment and the solar cell manufacturing process, finally reduce the solar cell production cost.
Description of drawings
Fig. 1 is that two kinds of silicon chips of the present invention are 900 ℃ of lower heat treatment experiment results.Various silicon chips are being parallel to the line of cut direction and perpendicular to the bending breaking strain (ε on the line of cut direction before and after processing in 900 ℃/2 hours argon gas
c, adopt 3 bending methods to measure).
Fig. 2 is to the heat treatment experiment result of diamond cut silicon chip under the different temperatures of the present invention.The diamond cut silicon chip was perpendicular to the bending breaking strain (ε on the line of cut direction before and after lower 2 hours of different temperatures was processed
c, adopt 3 bending methods to measure).
Embodiment
The present invention will be described further by following examples.The present invention includes but be not limited to the following example.
Embodiment 1.
Get mortar cutting polysilicon chip, become 78 x, 8 mm with the laser scribing means scribing
2The test piece of size strip; Its rectangular direction is respectively along silicon chip line of cut direction with perpendicular to silicon chip line of cut direction, each 20; Test piece scribing edge all with No. 600 carborundum papers along rectangular direction polishing deburring.Every kind of test piece is got 10 and be incubated 2 hours in 900 ℃ of lower argon gas, with the stove cooling, guarantees in the process that cooldown rate is lower than 7 ℃/min afterwards.Various silicon chips are carried out 3 bending experiments one by one, record its breaking strain, and average, the result is as shown in table 1.Do heat treatment the breaking strain of mortar cutting polysilicon chip on both direction all is significantly increased.
Table 1 mortar cutting polysilicon chip is 2 hours processing front and back breaking strain value (x10 in 900 ℃ of argon gas
-3)
| ? | Be parallel to line of cut | Perpendicular to line of cut |
| Before the processing | 1.33 | 1.10 |
| After the processing | 1.71 | 1.66 |
| Relatively increase | 29% | 51% |
Embodiment 2.
Get the diamond cut polysilicon chip, become 78 x, 8 mm with the laser scribing means scribing
2The test piece of size strip; Its rectangular direction is respectively along silicon chip line of cut direction with perpendicular to silicon chip line of cut direction, each 20; Test piece scribing edge all with No. 600 carborundum papers along rectangular direction polishing deburring.Every kind of test piece is got 10 and be incubated 2 hours in 600 ℃ of lower argon gas, with the stove cooling, guarantees in the process that cooldown rate is lower than 7 ℃/min afterwards.Various silicon chips are carried out 3 bending experiments one by one, record its breaking strain, and average, the result is as shown in table 2.Do heat treatment the breaking strain of diamond cut polysilicon chip on both direction all is significantly increased.
Table 2 diamond cut polysilicon chip is 2 hours processing front and back breaking strain mean value (x10 in 600 ℃ of argon gas
-3)
| ? | Be parallel to line of cut | Perpendicular to line of cut |
| Before the processing | 1.50 | 0.65 |
| After the processing | 2.00 | 1.27 |
| Relatively increase | 33% | 95% |
Embodiment 3.
Get the diamond cut polysilicon chip, become 78 x, 8 mm with the laser scribing means scribing
2The test piece of size strip; Its rectangular direction is respectively along silicon chip line of cut direction with perpendicular to silicon chip line of cut direction, each 10; Test piece scribing edge all with No. 600 carborundum papers along rectangular direction polishing deburring.Every kind of test piece is incubated 2 hours in 300 ℃ of lower air, cool off with stove afterwards.Various silicon chips are carried out 3 bending experiments one by one, record its breaking strain, and average, the result is as shown in table 3.Can see, make the breaking strain of diamond cut polysilicon chip on both direction that considerable raising be arranged do heat treatment.
Table 3 diamond cut polysilicon chip is 2 hours processing front and back breaking strain mean value (x10 in 300 ℃ of air
-3)
| ? | Be parallel to line of cut | Perpendicular to line of cut |
| Before the processing | 1.50 | 0.65 |
| After the processing | 1.68 | 0.76 |
| Relatively increase | 12% | 17% |
Embodiment 4.
Get the diamond cut monocrystalline silicon piece, become 78 x, 8 mm with the laser scribing means scribing
2The test piece of size strip; Its rectangular direction is respectively along silicon chip line of cut direction with perpendicular to silicon chip line of cut direction, each 10; Test piece scribing edge all with No. 600 carborundum papers along rectangular direction polishing deburring.Every kind of test piece is incubated 2 hours in 600 ℃ of lower nitrogen, cool off with stove afterwards.Various silicon chips are carried out 3 bending experiments one by one, record its breaking strain, and average, the result is as shown in table 4.Can see, make the breaking strain of diamond cut polysilicon chip on both direction that considerable raising be arranged do heat treatment.
Table 4 diamond cut monocrystalline silicon piece is 2 hours processing front and back breaking strain mean value (x10 in 600 ℃ of nitrogen
-3)
| ? | Be parallel to line of cut | Perpendicular to line of cut |
| Before the processing | 1.67 | 1.04 |
| After the processing | 1.85 | 1.64 |
| Relatively increase | 11% | 58% |
Claims (2)
1. a method that improves the silicon chip anti-fragmentation performance is characterized in that silicon chip is placed argon gas or nitrogen atmosphere, is heated to 300～900 ℃, is incubated 0.2～4 hour, then, with the speed that is lower than 7 ℃/min silicon chip is cooled to room temperature and comes out of the stove.
2. a method that improves the silicon chip anti-fragmentation performance is characterized in that silicon chip is placed air atmosphere, is heated to 300～＜600 ℃, is incubated 0.2～4 hour, then, with the speed that is lower than 7 ℃/min silicon chip is cooled to room temperature and comes out of the stove.
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| CN201210426846.2A CN102969395B (en) | 2012-10-31 | 2012-10-31 | Method for improving cracking resistance of silicon chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110965127A (en) * | 2019-12-10 | 2020-04-07 | 中国电子科技集团公司第四十六研究所 | Heat treatment strengthening process for ultrathin silicon single crystal slices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5980720A (en) * | 1997-02-06 | 1999-11-09 | Samsung Electronics Co., Ltd. | Methods of treating crystal-grown wafers for surface defect analysis |
| CN101187059A (en) * | 2006-10-04 | 2008-05-28 | 硅电子股份公司 | Silicon wafer having good intrinsic getterability and method for its production |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5980720A (en) * | 1997-02-06 | 1999-11-09 | Samsung Electronics Co., Ltd. | Methods of treating crystal-grown wafers for surface defect analysis |
| CN101187059A (en) * | 2006-10-04 | 2008-05-28 | 硅电子股份公司 | Silicon wafer having good intrinsic getterability and method for its production |
Non-Patent Citations (1)
| Title |
|---|
| 奚光平等: "低温退火对重掺砷直拉硅片的氧沉淀形核的作用", 《物理学报》, vol. 57, no. 11, 20 November 2008 (2008-11-20), pages 7108 - 7113 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110965127A (en) * | 2019-12-10 | 2020-04-07 | 中国电子科技集团公司第四十六研究所 | Heat treatment strengthening process for ultrathin silicon single crystal slices |
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