CN102967072A - 辐射选择性吸收器-多层系统和配备有其的用于太阳能发电装置的吸收器 - Google Patents

辐射选择性吸收器-多层系统和配备有其的用于太阳能发电装置的吸收器 Download PDF

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CN102967072A
CN102967072A CN2012101950229A CN201210195022A CN102967072A CN 102967072 A CN102967072 A CN 102967072A CN 2012101950229 A CN2012101950229 A CN 2012101950229A CN 201210195022 A CN201210195022 A CN 201210195022A CN 102967072 A CN102967072 A CN 102967072A
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R·尼格曼
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Abstract

本发明涉及一种辐射选择性吸收器-多层系统(1)，其包括氮化硅和吸收层(5)。所述氮化硅包含在所述吸收层(5)中并且提供一基质(4)。在所述基质(4)中结合入纳米晶颗粒(3)。用于太阳能发电装置的吸收器包括一个构件被利用所述辐射选择性吸收器-多层系统(1)涂覆。所述构件可以是吸收器。

Description

辐射选择性吸收器-多层系统和配备有其的用于太阳能发电装置的吸收器
技术领域
本发明涉及一种辐射选择性吸收器-多层系统和配备有所述辐射选择性吸收器-多层系统的用于太阳能发电装置的吸收器。 
背景技术
对于这种系统的要求是其高的热稳定性。 
在DE 10 2006 039 669 A1中建议了一种系统，其中，吸收层由氮化钛铝构成并且抗反射层由氮化硅构成。 
该系统不能以足够的程度满足所述要求。 
发明内容
因此，本发明的主要任务在于，提供一种吸收器-多层系统和配备有这种吸收器-多层系统的吸收器，所述吸收器-多层系统具有特别高的热稳定性。 
另外的任务在于，提供一种吸收器-多层系统和配备有这种吸收器-多层系统的吸收器，它们能够成本低廉地制造。 
所述任务通过具有权利要求1特征的系统并且通过具有权利要求10特征的吸收器解决。 
本发明的辐射选择性吸收器-多层系统包括氮化硅Si3N4和吸收层，其特征在于，氮化硅包含在吸收层中并且构成基质；并且在该基质中结合入纳米晶颗粒。 
在所述太阳能选择性吸收器-多层系统中，包含在吸收层中的氮化硅用作用于晶体的结合介质，所述晶体分别仅仅具有几纳米的大小并且由不同于氮化硅的材料构成。 
本发明的多层系统具有高达1000℃的高耐温性。 
附加的优点是低廉的制造成本。形成吸收层的材料可以由位于德国埃 特林根的Eifeler Süd-Coating股份有限公司以商品名 
Figure BDA00001760121800021
购得。该公司利用 
Figure BDA00001760121800022
涂覆通常的切削工具例如钻头等，也就是用于涂覆不同于本发明的物品。由 构成的吸收层的涂覆可通过物理气相沉积(PVD)、特别是电弧蒸镀(Arc-PVD)进行。 
在从属权利要求中描述本发明的另外的进一步方案。 
在一个进一步方案中，所述颗粒由不同于氮化硅的其他氮化物构成。吸收层在此仍然是复合材料。所述其他氮化物可以是氮化铝铬AlCrN或氮化铝钛铬AlTiCrN。同样，所述其他氮化物可以是氮化钛铝TiAlN或氮化铝钛AlTiN。在该情况下，在所述基质和结合在所述基质中的颗粒下方具有柱状结构，所述柱状结构具有由氮化硅构成的基质和结合在其中的由氮化钛铝TiAlN或氮化铝钛AlTiN构成的纳米晶杆。所述杆是柱形晶体，由不同于氮化硅的其他氮化物构成。杆组织在吸收层的多功能方面是有利的。 
在另一进一步方案中，所述颗粒具有3纳米至10纳米的平均粒度。粒度涉及的是相应颗粒的最大伸展尺寸并且在近似球形的形状的情况下可以是颗粒的直径。与此相应地，颗粒的平均直径为3纳米至10纳米。 
在另一进一步方案中，在所述基质内部，颗粒之间的平均距离为1纳米至2纳米。平均距离是相应的颗粒与相邻颗粒的距离平均值并且平均为1纳米至2纳米。与此相应地，相应的颗粒与相邻颗粒之间由基质填充的中间空间的宽度为1纳米至2纳米。 
在另一进一步方案中，所述吸收层在功能单元中构成抗反射层，其是所述辐射选择性吸收器-多层系统的唯一的抗反射层。在此，吸收层和抗反射层构成所述吸收器-多层系统的最外部或最上部的层。 
在另一进一步方案中，所述吸收层在功能单元中构成红外反射层，其是所述辐射选择性吸收器-多层系统的唯一的红外反射层。 
本发明还涉及一种用于太阳能发电装置的吸收器，包括一个构件，所述构件被利用本发明所述的或者本发明的进一步方案之一所述的吸收器-多层系统涂覆。所述构件可以是吸收器管或者热接收器。例如，所述构件可以是菲涅尔集热器或抛物槽式集热器的吸收器管。同样，所述构件也可以是抛物面发电装置或碟式斯特林发电装置的热接收器。 
附图说明
由下面对优选实施例和附图的描述中得出另外的结构上和功能上有利的进一步方案。在此示出： 
图1至8：是吸收器-多层系统的在层结构方面彼此不同的实施例， 
图9：是具有吸收器管的太阳能发电装置，所述吸收器管被用图1至8中的吸收器-多层系统涂覆。 
具体实施方式
在图1至9中，彼此相应的元件设有相同的参考标号。 
图1以横截面图示出太阳能发电装置的构件的壁。所述构件例如可以是吸收器管。所述构件包括基本材料或载体层11和安置在其上的吸收器-多层系统1。载体层11由不锈钢制成并且可以是吸收器管的管壁。在载体层11上安置由氮化钛TiN构成的附着层10，在所述附着层上安置纳米晶扩散阻挡层9。所述扩散阻挡层9包括由氮化硅Si3N4构成的基质9和结合在所述基质7中的由氮化钛铝TiAlN、氮化铝钛AlTiN、氮化铝铬AlCrN或氮化铝钛铬AlTiCrN构成的颗粒8。所述扩散阻挡层9防止微粒从载体层11或附着层10扩散到安置在扩散阻挡层9上的IR(红外)反射层6中。所述IR反射层6约0.1纳米厚并且可以由铜、金、银、铂或氮化钛构成。 
在IR反射层6上具有吸收层5，其包括基质4和嵌入到所述基质中的颗粒3。所述颗粒由氮化钛铝TiAlN或氮化铝钛AlTiN构成。基质4由氮化硅Si3N4构成。吸收层5可以是梯度层，其中，基质4的体积百分比从下/内向上/外增加。吸收层5的厚度可以为0.1微米至0.4微米。在吸收层5上安置透明层作为抗反射层2。所述抗反射层2具有80纳米至150纳米的厚度并且可以由氧化硅SiO2或氧化铝Al2O3构成。 
可以将附加的元件集成到颗粒3和/或基质4中。在IR反射层6与吸收层5之间和/或在IR反射层6与扩散阻挡层9之间可嵌入另外的附着层。 
图2中所示的实施例与图1中所示的实施例的区别仅仅在于吸附层5的构造。在图2的实施例中，吸收层5包括柱状结构14，其位于基质4和颗粒3下方。所述柱状结构14包括由氮化硅构成的基质13和嵌入到该基质中的由氮化钛铝或氮化铝钛构成的杆12。所述柱状结构14是纳米晶并且所述杆12在相对于所述多层系统1的层边界垂直的方向上基本上彼此平行地纵向延伸。该方向在所述构件构造为吸收器管的情况下可以是该吸收器 管的径向方向。 
图3中所示的实施例与图1中所示的实施例的区别仅仅在于省掉了抗反射层2。在图3的实施例中，吸收层5承担抗反射层的任务并且吸收层5是所述多层系统1的向着待接收的辐射的最外层。 
图4中的实施例与图2中的实施例的区别仅仅在于省掉了抗反射层2。在图4的该实施例中，吸收层5也形成最上面的层并且所述吸收层5同时也是抗反射层。 
图5示出一个实施例，其与图1的实施例的区别仅仅在于省掉了IR反射层。吸收层5直接安置在扩散阻挡层9上并且承担IR反射层的任务。 
图6示出一个实施例，其与图2的实施例的区别仅仅在于：在图6的实施例中，与图2的实施例相比，不存在单独的IR反射层。取而代之的是，在此也是将吸收层5直接安置在扩散阻挡层9上并且该吸收层5在此也在多功能使用的情况下承担IR反射层的任务。 
图7的实施例是图3实施例和图5实施例的组合。在图7的该实施例中，如图3中的实施例那样，不存在任何单独的抗反射层并且吸收层5承担抗反射层的任务。此外，在图7的实施例中，不存在任何单独的IR反射层并且吸收层5同样承担该省掉的IR反射层的任务。 
图8中的实施例与图7中的实施例的区别仅仅在于：吸收层5具有柱状结构14。图8的实施例可以说是图4和6的实施例的组合。 
图9以示意图示出具有反射器16的太阳能发电装置15，所述反射器将入射的太阳光引导到一个构件17上。所述构件17可以是吸收器管，所述吸收器管被流体流过。所述构件17被用多层系统1涂覆，所述多层系统是附图1至8中任一附图所示的多层系统1。 
本发明的多层系统1具有极高的应用温度并且因此适合于高温应用。此外，所述多层系统对于干扰具有高的可靠性，所述干扰是由于短时和无意地出现的温度峰值、例如由于太阳能设备中由于热介质回路例如由于泵失效导致的中断而导致的。此外，本发明的多层系统1极其稳固。 
参考标号表 
1    多层系统 
2    抗反射层 
3     颗粒 
4     基质 
5     吸收层 
6     IR反射层 
7     基质 
8     颗粒 
9     扩散阻挡层 
10    附着层 
11    载体层 
12    杆 
13    基质 
14    柱状结构 
15    太阳能发电装置 
16    反射器 
17    构件 

Claims (10)

1.一种辐射选择性吸收器-多层系统(1)，其包括氮化硅Si3N4和吸收层(5)，其特征在于，所述氮化硅Si3N4包含在所述吸收层(5)中并且构成基质(4)；并且在所述基质(4)中结合入纳米晶颗粒(3)。
2.根据权利要求1的辐射选择性吸收器-多层系统，其特征在于，所述颗粒(3)由不同于氮化硅Si3N4的其他氮化物构成。
3.根据权利要求2的辐射选择性吸收器-多层系统，其特征在于，所述颗粒(3)由氮化钛铝TiAlN或氮化铝钛AlTiN构成。
4.根据权利要求3的辐射选择性吸收器-多层系统，其特征在于，在所述基质(4)和结合在所述基质中的颗粒(3)下方具有柱状结构(14)，所述柱状结构具有由氮化硅Si3N4构成的基质(13)和结合在所述基质中的由氮化钛铝TiAlN或氮化铝钛AlTiN构成的纳米晶杆(12)。
5.根据权利要求2的辐射选择性吸收器-多层系统，其特征在于，所述颗粒(3)由氮化铝铬AlCrN或氮化铝钛铬AlTiCrN构成。
6.根据权利要求1至5之一的辐射选择性吸收器-多层系统，其特征在于，所述颗粒(3)具有3nm至10nm的平均粒度。
7.根据权利要求1至6之一的辐射选择性吸收器-多层系统，其特征在于，在所述基质(4)内部，颗粒(3)之间的平均距离为1nm至2nm。
8.根据权利要求1至7之一的辐射选择性吸收器-多层系统，其特征在于，所述吸收层(5)在功能单元中构成抗反射层，其是所述辐射选择性吸收器-多层系统(1)的唯一的抗反射层。
9.根据权利要求1至8之一的辐射选择性吸收器-多层系统，其特征在于，所述吸收层(5)在功能单元中构成IR反射层，其是所述辐射选择性吸收器-多层系统(1)的唯一的IR反射层。
10.一种用于太阳能发电装置(15)的吸收器，其包括一构件(17)，所述构件特别是菲涅尔集热器或抛物槽式集热器的吸收器管或者是抛物面发电装置或碟式斯特林发电装置的热接收器，所述构件利用权利要求1至9之一所述的辐射选择性吸收器-多层系统(1)涂覆。
CN201210195022.9A 2011-08-30 2012-06-13 辐射选择性吸收器-多层系统和配备有其的用于太阳能发电装置的吸收器 Expired - Fee Related CN102967072B (zh)

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