CN102964886B - Formula and preparation method of high-selectivity solar energy heat absorption nanometer film - Google Patents
Formula and preparation method of high-selectivity solar energy heat absorption nanometer film Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000010521 absorption reaction Methods 0.000 title abstract description 19
- 238000009472 formulation Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 47
- 238000005245 sintering Methods 0.000 claims abstract description 34
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 24
- 239000012498 ultrapure water Substances 0.000 claims abstract description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000003921 oil Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002048 multi walled nanotube Substances 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims description 41
- 239000002086 nanomaterial Substances 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 25
- 238000000498 ball milling Methods 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000013543 active substance Substances 0.000 claims description 11
- 238000005201 scrubbing Methods 0.000 claims description 11
- -1 10~15 parts Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 10
- 239000005543 nano-size silicon particle Substances 0.000 claims description 10
- 239000011858 nanopowder Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 5
- 239000011807 nanoball Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 1
- 239000004809 Teflon Substances 0.000 abstract 1
- 229920006362 Teflon® Polymers 0.000 abstract 1
- 239000002270 dispersing agent Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000005238 degreasing Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005354 coacervation Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
The invention discloses a formula and a preparation method of a high-selectivity solar energy heat absorption nanometer film. The high-selectivity solar energy heat absorption nanometer film comprises the following components: Teflon nanometer powder, nanometer metal titanium powder, nanometer metal chromium powder, multiwalled carbon nanotube, nanometer magnesia and nanometer silicon oxide at a ratio of 35:65, nanometer manganese metal, BYK surface active agent, nanometer material dispersing agent and ultrapure water. The preparation method comprises the steps of dispersing the components, removing oil and dirt on the base material, preparing the film and sintering at high temperature. The nanometer materials are uniformly deposited on the surface of the base material, the thickness of the heat absorption film is less than 500nm, the solar energy absorption rate is greater than 95%, and the infrared emittance is about 5%. The high-selectivity solar energy heat absorption nanometer film has high stability, weather resistance, selectivity and heat absorption performance, is environment-friendly, is a novel high-selectivity heat absorption film, and has bright market prospect and economic benefit prospect.
Description
Technical field
What the present invention relates to is a kind of solar energy heat absorbing rete, in particular a kind of formula of highly selective solar energy heat absorbing nanometer rete and the preparation method of this rete.
Background technology
At present, plate solar collector is more and more subject to the favor in architecture-integral market.Heat absorption rete is as the core of heat collector, and its performance directly has influence on the final result of use of whole heat collector, also determines class and the quality of flat plate collector simultaneously.And China's flat-plate collector heat absorption rete technology is never effectively improved and optimizes, the coating that domestic flat type solar heat collector adopts mainly contains paint coatings, anodized coating, black chrome coating and magnetic sputtering coating.At present, the paint coatings emittance on market is higher, poor selectivity, and thermal characteristics is poor, and work-ing life is short; Magnetic sputtering coating producing apparatus costliness, weather resistance is not very desirable, the of long duration even coating shedding of performance degradation that just there will be.Black chrome coating preparation technology pollutes larger, can not meet the needs of environment environmental protection.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of formula of highly selective solar energy heat absorbing nanometer rete and the preparation method of this rete are provided, adopt nano material and High Voltage magnetic coacervation technology to realize the highly selective of rete.
The present invention is achieved by the following technical solutions, and nanometer film layer formula of the present invention by weight, comprises following component:
Polytetrafluorethylenano nano powder, 10～15 parts, particle diameter is less than or equal to 80nm, and purity is higher than 95%;
Nano metal titanium valve, 12～18 parts, particle diameter 50～80nm, purity is higher than 98%;
Nano metal chromium powder, 3～8 parts, particle diameter 20～50nm, purity is higher than 98%;
Multi-walled carbon nano-tubes, 1～3 part, diameter is less than or equal to 20nm, and length is less than or equal to 300nm;
Nano magnesia: the weight ratio of nano silicon oxide is 35:65, and 8～12 parts, particle diameter is less than or equal to 30nm, and purity is higher than 98%;
Nano metal manganese, 3～8 parts, particle diameter 50～80nm, purity is higher than 98%;
Tensio-active agent, 1～3 part;
Nano material dispersion agent, 1～3 part;
Ultrapure water, 40～50 parts.
Tensio-active agent of the present invention is the polyaminoamide solution B yk-130 of cationic unsaturated polycarboxylic acid.
Nano material dispersion agent of the present invention is TAZ-ND1.
A preparation method for highly selective solar energy heat absorbing nanometer rete, comprises the following steps:
(1) component is disperseed
After being taken in proportion, each component disperses;
(2) base material oil removing scrubbing
Substrate surface is carried out to oil removing and scrubbing, then carry out chromate treating;
(3) Film preparation
Use ultra-high speed High Voltage magnetic technology that film material is deposited on base material, micro-firing rate degree 4000～6000m/s, strong magnetoelectricity is pressed and is greater than 90,000 volts, flow 50～100cc/S, air pressure is greater than 6MPa;
(4) high temperature sintering
Carry out high temperature sintering and remove ultrapure water preparing the base material of upper rete, sintering process is set as: 200～280 DEG C of sintering 5min, 300～380 DEG C of sintering 5min, 400～450 DEG C of sintering 5min.
Described step (1) comprises the following steps:
1) polytetrafluorethylenano nano powder, ultrapure water and tensio-active agent are put into ball-milling dispersion machine;
2) and then nano magnesia, nano silicon oxide, nano material dispersion agent are put into ball-milling dispersion machine and disperse 2min;
3) add successively other nano material pre-dispersed 15min in ball-milling dispersion machine, then in nano ball grinding dispersion grinding all-in-one, disperse 3～6h;
4) by high pressure microjet dispersion machine dispersion steps 3) the mixing nano material that obtains, at least circulation disperses four times, and pressure is 600～800MPa, and discharge port bore is 0.1mm, and material temperature is lower than 22 DEG C.
In described step (2), meter by volume, water: grease-removing agent=1:20 configuration degreasing mixture, base material is carried out to soaking and washing 1 minute, scrub surface with hairbrush simultaneously, after degreasing, enter second in proportion degreasing mixture degreasing tank clean again one minute, then enter tap water service sink embathe 1 minute, finally enter pure water service sink and embathe 1 minute, complete the scrubbing oil removing of base material cleaned.
As one of optimal way of the present invention, described base material is aluminium volume or copper volume.
In order to make metallic surface occur uniform concave point, increase the specific surface area of base material, form optical trap, increase the specific absorption of its rete and carry out chromate treating, in described step (2), the weight ratio of chromaking liquid and ultrapure water is 45:55, base material chromaking point 30～35/c ㎡, chromaking film thickness is less than or equal to 10nm, and bake out temperature is 25～50 DEG C.
Because solar radiant energy is mainly distributed in 0.3 μ m～2.5 μ m, so energy gap 0.5eV(2.5 μ m)～1.24eV(1.0 μ semi-conductor m), as Si(1.1eV), Ge(0.7eV) and PbS(0.4eV) etc., absorb just meaningful for the selectivity of sun power.Transition metal is as Cu, Ni, Zn, Cr and Mn etc., and its absorption mechanism is similar to semi-conductor, and the energy gap 1.15eV of rete component nano-substance mixture in the present invention, meets the main distribution range of solar radiation, has spectral selectivity.Due to characteristics such as the large specific surface areas of nano material, in the present invention, the specific surface area of mixing liquid is more than 2500 ㎡/kg, so can ensure that rete of the present invention has 97% high-absorbility in addition.Because nano metal material used in the present invention self has very low infrared emittance, this rete main film forming substance is nano metal, and therefore this metallic diaphragm has very low infrared emissivity.
The present invention has the following advantages compared to existing technology: nano material of the present invention is deposited on substrate surface uniformly, and the absorption film layer thickness making is less than 500nm, is greater than 95% through actual measurement solar energy specific absorption, and infrared emittance is in 5% left and right; There is product stability, weathering resistance, highly selective heat absorption capacity solves the feature of environmental protection of production technique simultaneously, is that a kind of novel height is selected heat absorption rete, has stronger market outlook and economic benefit prospect.
Embodiment
Below embodiments of the invention are elaborated, the present embodiment is implemented under taking technical solution of the present invention as prerequisite, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
The film material of the present embodiment comprises following component by weight:
Polytetrafluorethylenano nano powder, 10 parts, particle diameter is less than or equal to 80nm, and purity is higher than 95%;
Nano metal titanium valve, 12 parts, particle diameter 50～80nm, purity is higher than 98%;
Nano metal chromium powder, 3 parts, particle diameter 20～50nm, purity is higher than 98%;
Multi-walled carbon nano-tubes, 1 part, diameter is less than 20nm, and length is less than 300nm;
Nano magnesia and nano silicon oxide mixture, weight ratio is 35:65, and 8 parts, particle diameter is less than 30nm, and purity is higher than 98%;
Nano metal manganese, 3 parts, particle diameter 50～80nm, purity is higher than 98%;
BYK-130 tensio-active agent, 1 part;
Nano material dispersion agent, 1 part;
Ultrapure water, 40 parts.
A preparation method for highly selective solar energy heat absorbing nanometer rete, comprises the following steps:
(1) component is disperseed
After each component is taken in proportion, disperse, be specially:
1) polytetrafluorethylenano nano powder, ultrapure water and tensio-active agent are put into ball-milling dispersion machine;
2) and then nano magnesia, nano silicon oxide, nano material dispersion agent are put into ball-milling dispersion machine and disperse 2min;
3) add successively other nano material pre-dispersed 15min in ball-milling dispersion machine, then in nano ball grinding dispersion grinding all-in-one, disperse 3h;
4) by high pressure microjet dispersion machine dispersion steps 3) the mixing nano material that obtains, at least circulation disperses four times, and pressure is 600MPa, and discharge port bore is 0.1mm, and material temperature is lower than 22 DEG C.
(2) base material oil removing scrubbing
Substrate surface is carried out to oil removing and scrubbing, then carry out chromate treating;
The weight ratio of chromaking liquid and ultrapure water is 45:55, base material chromaking point 30～35/c ㎡, and chromaking film thickness is less than 10nm, and bake out temperature is 25 DEG C.
(3) Film preparation
Use ultra-high speed High Voltage magnetic technology that film material is deposited on base material, micro-firing rate degree 4000m/s, strong magnetoelectricity is pressed and is greater than 90,000 volts, adjusts flow 50～100cc/S according to the wide cut of base material, and air pressure is greater than 6MPa;
(4) high temperature sintering
Carry out high temperature sintering and remove ultrapure water preparing the base material of upper rete, sintering process is set as: 200 DEG C of sintering 5min, 300 DEG C of sintering 5min, 400 DEG C of sintering 5min.
The base material of the present embodiment is aluminium volume.
Through high temperature sintering, ultrapure water all volatilizees, and nano material is deposited on substrate surface uniformly, and thicknesses of layers is less than 500nm, is greater than 95% through actual measurement solar energy specific absorption, and infrared emittance is in 5% left and right.
Embodiment 2
The film material of the present embodiment comprises following component by weight:
Polytetrafluorethylenano nano powder, 12 parts, particle diameter is less than or equal to 80nm, and purity is higher than 95%;
Nano metal titanium valve, 15 parts, particle diameter 50～80nm, purity is higher than 98%;
Nano metal chromium powder, 5 parts, particle diameter 20～50nm, purity is higher than 98%;
Multi-walled carbon nano-tubes, 2 parts, diameter is less than 20nm, and length is less than 300nm;
Nano magnesia and nano silicon oxide mixture, weight ratio is 35:65, and 10 parts, particle diameter is less than 30nm, and purity is higher than 98%; Nano metal manganese, 5 parts, particle diameter 50～80nm, purity is higher than 98%;
BYK-130 tensio-active agent, 2 parts;
Nano material dispersion agent, 1.5 parts;
Ultrapure water, 47.5 parts.
A preparation method for highly selective solar energy heat absorbing nanometer rete, comprises the following steps:
(1) component is disperseed
After each component is taken in proportion, disperse, be specially:
1) polytetrafluorethylenano nano powder, ultrapure water and tensio-active agent are put into ball-milling dispersion machine;
2) and then nano magnesia, nano silicon oxide, nano material dispersion agent are put into ball-milling dispersion machine and disperse 2min;
3) add successively other nano material pre-dispersed 15min in ball-milling dispersion machine, then in nano ball grinding dispersion grinding all-in-one, disperse 4h;
4) by high pressure microjet dispersion machine dispersion steps 3) the mixing nano material that obtains, at least circulation disperses four times, and pressure is 700MPa, and discharge port bore is 0.1mm, and material temperature is lower than 22 DEG C.
(2) base material oil removing scrubbing
Substrate surface is carried out to oil removing and scrubbing, then carry out chromate treating;
The weight ratio of chromaking liquid and ultrapure water is 45:55, base material chromaking point 30～35/c ㎡, and chromaking film thickness is less than 10nm, and bake out temperature is 40 DEG C.
(3) Film preparation
Use ultra-high speed High Voltage magnetic technology that film material is deposited on base material, micro-firing rate degree 5000m/s, strong magnetoelectricity is pressed and is greater than 90,000 volts, adjusts flow 50～100cc/S according to the wide cut of base material, and air pressure is greater than 6MPa;
(4) high temperature sintering
Carry out high temperature sintering and remove ultrapure water preparing the base material of upper rete, sintering process is set as: 246 DEG C of sintering 5min, 350 DEG C of sintering 5min, 420 DEG C of sintering 5min.
The base material of the present embodiment is copper volume.
Through high temperature sintering, ultrapure water all volatilizees, and nano material is deposited on substrate surface uniformly, and thicknesses of layers is less than 500nm, is greater than 95% through actual measurement solar energy specific absorption, and infrared emittance is in 5% left and right.
Embodiment 3
The film material of the present embodiment comprises following component by weight:
Polytetrafluorethylenano nano powder, 15 parts, particle diameter is less than or equal to 80nm, and purity is higher than 95%;
Nano metal titanium valve, 18 parts, particle diameter 50～80nm, purity is higher than 98%;
Nano metal chromium powder, 8 parts, particle diameter 20～50nm, purity is higher than 98%;
Multi-walled carbon nano-tubes, 3 parts, diameter is less than 20nm, and length is less than 300nm;
Nano magnesia and nano silicon oxide mixture, weight ratio is 35:65, and 12 parts, particle diameter is less than 30nm, and purity is higher than 98%;
Nano metal manganese, 8 parts, particle diameter 50～80nm, purity is higher than 98%;
BYK-130 tensio-active agent, 3 parts;
Nano material dispersion agent, 3 parts;
Ultrapure water, 50 parts.
A preparation method for highly selective solar energy heat absorbing nanometer rete, comprises the following steps:
(1) component is disperseed
After each component is taken in proportion, disperse, be specially:
1) polytetrafluorethylenano nano powder, ultrapure water and tensio-active agent are put into ball-milling dispersion machine;
2) and then nano magnesia, nano silicon oxide, nano material dispersion agent are put into ball-milling dispersion machine and disperse 2min;
3) add successively other nano material pre-dispersed 15min in ball-milling dispersion machine, then in nano ball grinding dispersion grinding all-in-one, disperse 6h;
4) by high pressure microjet dispersion machine dispersion steps 3) the mixing nano material that obtains, at least circulation disperses four times, and pressure is 800MPa, and discharge port bore is 0.1mm, and material temperature is lower than 22 DEG C.
(2) base material oil removing scrubbing
Substrate surface is carried out to oil removing and scrubbing, then carry out chromate treating;
The weight ratio of chromaking liquid and ultrapure water is 45:55, base material chromaking point 30～35/c ㎡, and chromaking film thickness is less than 10nm, and bake out temperature is 50 DEG C.
(3) Film preparation
Use ultra-high speed High Voltage magnetic technology that film material is deposited on base material, micro-firing rate degree 6000m/s, strong magnetoelectricity is pressed and is greater than 90,000 volts, adjusts flow 50～100cc/S according to the wide cut of base material, and air pressure is greater than 6MPa;
(4) high temperature sintering
Carry out high temperature sintering and remove ultrapure water preparing the base material of upper rete, sintering process is set as: 280 DEG C of sintering 5min, 380 DEG C of sintering 5min, 450 DEG C of sintering 5min.
The base material of the present embodiment is aluminium volume.
Through high temperature sintering, ultrapure water all volatilizees, and nano material is deposited on substrate surface uniformly, and thicknesses of layers is less than 500nm, is greater than 95% through actual measurement solar energy specific absorption, and infrared emittance is in 5% left and right.
Claims (5)
1. a formula for highly selective solar energy heat absorbing nanometer rete, is characterized in that, by weight, comprises following component:
Polytetrafluorethylenano nano powder, 10～15 parts, particle diameter is less than or equal to 80nm, and purity is higher than 95%;
Nano metal titanium valve, 12～18 parts, particle diameter 50～80nm, purity is higher than 98%;
Nano metal chromium powder, 3～8 parts, particle diameter 20～50nm, purity is higher than 98%;
Multi-walled carbon nano-tubes, 1～3 part, diameter is less than or equal to 20nm, and length is less than or equal to 300nm;
Nano magnesia: the weight ratio of nano silicon oxide is 35:65, and 8～12 parts, particle diameter is less than or equal to 30nm, and purity is higher than 98%;
Nano metal manganese, 3～8 parts, particle diameter 50～80nm, purity is higher than 98%;
Tensio-active agent, 1～3 part;
Nano material dispersion agent, 1～3 part;
Ultrapure water, 40～50 parts.
2. a preparation method for highly selective solar energy heat absorbing nanometer rete as claimed in claim 1, is characterized in that: comprise the following steps:
(1) component is disperseed
After being taken in proportion, each component disperses;
(2) base material oil removing scrubbing
Substrate surface is carried out to oil removing and scrubbing, then carry out chromate treating;
(3) Film preparation
Use ultra-high speed High Voltage magnetic technology that film material is deposited on base material, micro-firing rate degree 4000～6000m/s, strong magnetoelectricity is pressed and is greater than 90,000 volts, flow 50～100cc/S, air pressure is greater than 6MPa;
(4) high temperature sintering
Carry out high temperature sintering and remove ultrapure water preparing the base material of upper rete, sintering process is set as: 200～280 DEG C of sintering 5min, 300～380 DEG C of sintering 5min, 400～450 DEG C of sintering 5min.
3. the preparation method of a kind of highly selective solar energy heat absorbing nanometer rete according to claim 2, is characterized in that: described step (1) comprises the following steps:
1) polytetrafluorethylenano nano powder, ultrapure water and tensio-active agent are put into ball-milling dispersion machine;
2) and then nano magnesia, nano silicon oxide, nano material dispersion agent are put into ball-milling dispersion machine and disperse 2min;
3) add successively other nano material pre-dispersed 15min in ball-milling dispersion machine, then in nano ball grinding dispersion grinding all-in-one, disperse 3～6h;
4) by high pressure microjet dispersion machine dispersion steps 3) the mixing nano material that obtains, at least circulation disperses four times, and pressure is 600～800MPa, and discharge port bore is 0.1mm, and material temperature is lower than 22 DEG C.
4. the preparation method of a kind of highly selective solar energy heat absorbing nanometer rete according to claim 2, is characterized in that: described base material is aluminium volume or copper volume.
5. the preparation method of a kind of highly selective solar energy heat absorbing nanometer rete according to claim 2, it is characterized in that: in described step (2), the weight ratio of chromaking liquid and ultrapure water is 45:55, and chromaking film thickness is less than or equal to 10nm, and bake out temperature is 25～50 DEG C.
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| CN103542563A (en) * | 2013-09-23 | 2014-01-29 | 邯郸市飞翔太阳能科技有限公司 | Ceramic substrate heat absorption plate core and flat-plate solar collector thereof |
| CN104403558B (en) * | 2014-11-14 | 2017-01-18 | 无锡中洁能源技术有限公司 | Preparation method for solar-energy selectively-adsorbing paint with self cleaning function |
| CN108610662A (en) * | 2016-11-30 | 2018-10-02 | 德州金奈尔新材料科技有限公司 | Highly selective absorption film layer formula of nano black chromium and preparation method thereof |
| CN109237828A (en) * | 2017-05-08 | 2019-01-18 | 德州金奈尔新材料科技有限公司 | The highly selective heat absorption heating film of metal atomic layer depositing solar and preparation method |
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|---|---|---|---|---|
| CN101418155A (en) * | 2008-12-05 | 2009-04-29 | 中山大学 | Sun screen and heat insulation nano composite material for reflecting infrared and preparation method thereof |
| CN101805561A (en) * | 2010-05-05 | 2010-08-18 | 哈尔滨工业大学 | Preparation method of high-radiation energy-saving coating on metal surface |
| CN101854131A (en) * | 2009-04-01 | 2010-10-06 | 中国科学院金属研究所 | High-temperature-resistant selective solar energy-absorbing film and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101418155A (en) * | 2008-12-05 | 2009-04-29 | 中山大学 | Sun screen and heat insulation nano composite material for reflecting infrared and preparation method thereof |
| CN101854131A (en) * | 2009-04-01 | 2010-10-06 | 中国科学院金属研究所 | High-temperature-resistant selective solar energy-absorbing film and preparation method thereof |
| CN101805561A (en) * | 2010-05-05 | 2010-08-18 | 哈尔滨工业大学 | Preparation method of high-radiation energy-saving coating on metal surface |
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