CN102961185A - Semiconductor laser system for laser medical cosmetology - Google Patents
Semiconductor laser system for laser medical cosmetology Download PDFInfo
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- CN102961185A CN102961185A CN201210480076XA CN201210480076A CN102961185A CN 102961185 A CN102961185 A CN 102961185A CN 201210480076X A CN201210480076X A CN 201210480076XA CN 201210480076 A CN201210480076 A CN 201210480076A CN 102961185 A CN102961185 A CN 102961185A
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Abstract
The invention provides a semiconductor laser system for laser medical cosmetology. A contact window of the semiconductor laser system can be directly contacted with the skin. The semiconductor laser system comprises a semiconductor laser array, a light waveguide, the a boss-shaped and transparent contact window and a refrigerating block, wherein the light waveguide is positioned at the front end of a light emitting surface of the semiconductor laser array; the boss-shaped and transparent contact window is positioned at the light-outlet end of the light waveguide; the refrigerating block is used for carrying out conduction cooling on the contact window, and is divided into a base part and a hollow type head part positioned above the base part; the side walls of the contact window are wholly attached and fastened by the front part of the hollow type head part; the light-outlet end of the light waveguide is positioned at a cavity of the hollow type head part, and a gap is left between the light-outlet end of the light waveguide and the inner wall of the hollow type head part; and the light waveguide is clamped and fixed by a pair of groove type fixed blocks, and the contact surfaces among the light waveguide and the fixed blocks are provided with gaskets which are hollow at the centers. The semiconductor laser system provided by the invention has the advantages that the unique refrigerating structure design is adopted, so that the temperature of the working end surface directly contacted with the skin can be close to the freezing point, and the structure is compact and stable.
Description
Technical field
The invention belongs to the semiconductor laser application, relate to a kind of high-power semiconductor laser light-source system, be applicable to laser medicine.
Background technology
The key areas that laser medicine is used as laser develops very fastly, progressively moves to maturity.Volume is little, lightweight because having, the life-span is long, low in energy consumption for semiconductor laser, wavelength covers wide characteristics, is specially adapted to the manufacturing of armarium.
The commercial laser depilation system that uses has at present: ruby laser (wavelength 694nm), alexandrite laser (wavelength 755nm), semiconductor laser (wavelength 810nm) and accent Q neodymium doped yttrium aluminium garnet laser (wavelength 1064nm).Wherein the semiconductor laser depilation has been proved to be a kind of safety and effective laser depilation mode.
According to estimates, the laser depilation operation of carrying out in the global range in 2010 reaches 5,000,000 person-times.Semiconductor laser is the skin reconstruction operations in another important application of beauty treatment fields, is used for reduce wrinkle, skin care.Moisture absorption during laser is organized by dermal collagen produces heat effect, and the regeneration of stimulation collagen and reinventing makes the skin smooth delicacy that becomes, and recovers elasticity.In addition, laser also can be used for treating freckle, traumatic pigmentation, dispel tatoo, eyebrow tattooing, informer etc. are black, the cyanine pathological changes
Thermal source the most frequently used in the ophthalmology is semiconductor laser, and semiconductor laser can be used for treating various Refractory Glaucomas, the intractable high intraocular pressure of Silicone oil injection postoperative, and amphiblestroid light is solidifying and fixing etc.
Full-fledged along with semiconductor laser technique, self distinctive advantage constantly increase, its in the application of medical field also in continuous expansion, nearly cover the range of application of other laser instrument.It has not only remedied high energy CO laser and has been difficult for fiber-optic transfer, unhandy shortcoming, and has remedied the shortcoming that lamp light-pumped solid state laser efficient is low, heat radiation bothers, and is expected to become the main flow of medical laser.
Chinese patent Granted publication number discloses the apparatus for laser depilation of Japanese refined awns company limited utility model for CN1452465.This device adopts output 5mW-1500mw, and the semiconductor laser of wavelength 600nm-1600nm loses hair or feathers, because system's output is low, spot size is little, and wavelength output is also non-adjustable, and depilation efficient is very low.
Summary of the invention
The object of the invention is to overcome the shortcoming of above-mentioned background technology, the laser medical beauty treatment Laser Diode System is provided, can be directly and contact skin by contact hole.
Technical scheme of the present invention is as follows:
The laser medical beauty treatment Laser Diode System comprises
The semiconductor laser array that is formed by the stack of a plurality of semiconductor lasers,
Be positioned at semiconductor laser array light-emitting area front end fiber waveguide,
Be positioned at fiber waveguide light-emitting window end boss shape transparent contact hole and
In order to contact hole is conducted the cold-making block of cooling;
Described cold-making block is divided into basilar part and is positioned at the hollow type head of basilar part top, and the front portion of this hollow type head is with the whole applying fastening of the sidewall of contact hole; Fiber waveguide light-emitting window end is positioned at the cavity of hollow type head, and and the inwall of hollow type head between leave the space;
The thermoelectric semiconductor refrigerator is set below the basilar part of cold-making block, and thermoelectric semiconductor refrigerator (TEC) below is provided with the first water flowing piece; Semiconductor laser array is equipped with the second water flowing piece for heat radiation;
Above-mentioned fiber waveguide grips by a pair of grooved fixed block that is installed on the first water flowing piece or the cold-making block basilar part, and this is fixed by the screw cross-under the grooved fixed block, and the center that is provided with on the contact surface of fiber waveguide and fixed block is empty pad.
Based on above-mentioned basic technical scheme, the present invention has also done following optimization and has limited and improve.
Above-mentioned pad is flexible material.(polyformaldehyde, polyethylene, polystyrene, polypropylene, polyamide, vulcanite)
Liquid cooling passage in above-mentioned the first water flowing piece and the second water flowing piece can be independent separately, also can be in series.
Above-mentioned fiber waveguide integral body is cylinder, round platform, prism or terrace with edge shape.
Above-mentioned fiber waveguide is positioned at semiconductor laser array light-emitting area front end, apart from semiconductor laser array light-emitting area 0.5-5.0 millimeter.
The material of above-mentioned contact hole can be sapphire or K9 glass, quartz glass, diamond etc.
The material of above-mentioned cold-making block can be metal material, such as copper, and aluminum, ferrum, gold plated copper, gold-plated aluminum, rustless steels etc. also can be diamond.
The material of above-mentioned the first water flowing piece and the second water flowing piece can be copper, aluminum, rustless steel, hard anodized aluminum, plastics.
Above-mentioned semiconductor laser is that chip of laser is encapsulated on the heat sink, and heat sink can be micro-channel heat sink, grand passage is heat sink or metal derby; Chip of laser can be single-shot luminous point chip, also can be multiple luminous point chip.
The bottom of above-mentioned semiconductor laser array is provided with insulating barrier, is mounted on the second water flowing piece by this insulating barrier.
The present invention has following beneficial effect:
1, the fast axle angle of divergence of semiconductor laser array mini-bus bar quick shaft direction is 30～40 degree usually, and the slow axis angle of divergence is 5～10 degree; Use fiber waveguide transmission laser, confine optical beam is dispersed, and by Multi reflection, therefore the hot spot of final outgoing is obtained uniform light spots by homogenize to light beam in fiber waveguide.
2, adopt unique refrigeration structure design, so that the operative end surface temperature that directly contacts with skin can be near freezing point, and compact conformation, stablize.
3, adopt thermoelectric semiconductor refrigerator (TEC) as cooling source, the temperature of regulating cold-making block is freezed to contact hole, and chilling temperature can be low to moderate (freezing point) about 5 ℃, the pain when having effectively reduced treatment.
4, coupling setting has the water flowing piece of liquid cooling passage, and radiating efficiency is high; In addition, water flowing piece under the thermoelectric semiconductor refrigerator also can consist of a channels in series with the liquid cooling passage of the miscellaneous part such as semiconductor laser array is whole, semiconductor laser array and semiconductor thermoelectric refrigeration device (TEC) cooling water channel are cascaded structure, connect by the water flowing piece, simple in structure, overcome each uncontrollable shortcoming in branch road water route of traditional water route in parallel, effectively guaranteed the cooling of semiconductor laser, so that laser works is more reliable and more stable.
5, contact hole adopts the boss design, assists entering of article such as epoxy resin etc. when having stopped treatment, so that laser works is more reliable and more stable; Simultaneously contact hole change easy, during use can with skin attachement, the contact site temperature had both protected normal skin not to be subjected to the hot injury near freezing point effectively, eased the pain, and can increase the treatment energy again, improved curative effect; Contact hole presses down skin simultaneously, makes the hair follicle lodging, makes the absorbtivity of laser increase 30%-40%.
6, fiber waveguide grips by fixed block, and the contact site of fiber waveguide and fixed block is perpendicular or horizontal plane, is beneficial to stable holding and fixes, and fixed block can be arranged on cold-making block basilar part and the/the first water flowing piece.
7, between fixed block and fiber waveguide pad is set, it is fixing that two fixed blocks are connected by screw, and prevents that fixed block from crushing fiber waveguide; The pad center is empty, and connection fixing block and fiber waveguide reduce pad and fiber waveguide contact area, and the laser that does not affect in the fiber waveguide carries out total reflection.The refraction of the refractive index ratio fiber waveguide of air is low, so the laser that semiconductor laser sends carries out multiple total reflection after by fiber waveguide, total reflection is not carried out for sky does not affect to make by the laser in the fiber waveguide in the pad center, if pad is not hollow type, when then the refractive index ratio fiber waveguide refractive index of pad is large, then affects by the laser in the fiber waveguide and carry out total reflection.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the sketch map of upper and lower clamping;
Fig. 3 is the sketch map of left and right clamping;
Fig. 4 is cold-making block of the present invention and contact hole connected mode figure.
Drawing reference numeral explanation: 1 semiconductor laser array; 2 fiber waveguides; 3 contact holes; 4 cold-making blocks; 5 semiconductor thermoelectric refrigeration devices; 6 first water flowing pieces; 7 chip of laser; 8 heat sinks; 9 water inlets; 10 outlets; 11 hollow pads; 12 first fixed blocks; 13 second fixed blocks; 14 second water flowing pieces; 15 insulating barriers.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
As shown in Figure 1, laser medical beauty treatment Laser Diode System of the present invention, the transparent contact hole 3 of the boss shape that comprise the semiconductor laser array 1, the fiber waveguide 2 that is positioned at semiconductor laser array light-emitting area front end that are formed by the stack of a plurality of semiconductor lasers, is positioned at fiber waveguide light-emitting window end and in order to contact hole is conducted the cold-making block 4 of cooling.
Cold-making block 4 is divided into basilar part and is positioned at the hollow type head of basilar part top, and the front portion of this hollow type head is with the whole applying fastening of the sidewall of contact hole 3; Fiber waveguide light-emitting window end is positioned at the cavity of hollow type head, and and the inwall of hollow type head between leave the space.
Fiber waveguide grips by a pair of grooved fixed block 12,13 that is installed on the first water flowing piece 6 or the cold-making block basilar part, and this is fixed by the screw cross-under the grooved fixed block, and the center that is provided with on the contact surface of fiber waveguide and fixed block is empty pad.The concrete form of this pad can be similar to packing ring, also can be that cross section is the structure of polygon frame, oval frame.
This hollow pad is flexible material, and better selection is polyformaldehyde, polyethylene, polystyrene, polypropylene, polyamide or vulcanite.
Fiber waveguide is positioned at semiconductor laser array light-emitting area front end, apart from semiconductor laser array light-emitting area 0.5-5.0 millimeter.
According to the practical application needs, the material of fiber waveguide 2 can be metal, and then fiber waveguide is hollow, and four faces all are coated with reflectance coating in the fiber waveguide; The material of fiber waveguide also can be transparent material, and such as glass, resin, sapphire, diamond etc., then fiber waveguide both can be for solid, also can be for hollow.Further improve energy density such as needs, fiber waveguide 2 can adopt has terrace with edge shape or the truncated cone-shaped that light beam converges effect.
The material of contact hole can be sapphire or K9 glass, quartz glass, diamond etc.
The material of cold-making block can be metal material, such as copper, and aluminum, ferrum, gold plated copper, gold-plated aluminum, rustless steels etc. also can be diamond.
Semiconductor laser can be that chip of laser is encapsulated on the heat sink, and heat sink can be micro-channel heat sink, grand passage is heat sink or metal derby; Chip of laser can be single-shot luminous point chip, also can be multiple luminous point chip.The bottom of semiconductor laser array is provided with insulating barrier 15, is mounted on the second water flowing piece by this insulating barrier.
If adopt the present invention to carry out laser depilation, then the output of semiconductor laser array 1 is to get final product more than the 200W.
Claims (10)
1. the laser medical beauty treatment Laser Diode System is characterized in that: comprise
The semiconductor laser array that is formed by the stack of a plurality of semiconductor lasers,
Be positioned at semiconductor laser array light-emitting area front end fiber waveguide,
Be positioned at fiber waveguide light-emitting window end boss shape transparent contact hole and
In order to contact hole is conducted the cold-making block of cooling;
Described cold-making block is divided into basilar part and is positioned at the hollow type head of basilar part top, and the front portion of this hollow type head is with the whole applying fastening of the sidewall of contact hole; Fiber waveguide light-emitting window end is positioned at the cavity of hollow type head, and and the inwall of hollow type head between leave the space;
The thermoelectric semiconductor refrigerator is set below the basilar part of cold-making block, and thermoelectric semiconductor refrigerator below is provided with the first water flowing piece; Semiconductor laser array is equipped with the second water flowing piece for heat radiation;
Described fiber waveguide grips by a pair of grooved fixed block that is installed on the first water flowing piece or the cold-making block basilar part, and this is fixed by the screw cross-under the grooved fixed block, and the center that is provided with on the contact surface of fiber waveguide and fixed block is empty pad.
2. laser medical beauty treatment Laser Diode System according to claim 1, it is characterized in that: described pad is flexible material.
3. laser medical beauty treatment Laser Diode System according to claim 1 and 2 is characterized in that: the liquid cooling passage in described the first water flowing piece and the second water flowing piece is independence or be in series separately.
4. laser medical beauty treatment Laser Diode System according to claim 3 is characterized in that: described fiber waveguide is whole to be cylinder, round platform, prism or terrace with edge shape.
5. laser medical beauty treatment Laser Diode System according to claim 3, it is characterized in that: described fiber waveguide is positioned at semiconductor laser array light-emitting area front end, apart from semiconductor laser array light-emitting area 0.5-5.0 millimeter.
6. laser medical beauty treatment Laser Diode System according to claim 3, it is characterized in that: the material of described contact hole is sapphire, K9 glass, quartz glass or diamond.
7. laser medical beauty treatment Laser Diode System according to claim 3, it is characterized in that: the material of described cold-making block is copper, aluminum, ferrum, gold plated copper, gold-plated aluminum, rustless steel or diamond.
8. laser medical beauty treatment Laser Diode System according to claim 3, it is characterized in that: the material of described the first water flowing piece and the second water flowing piece is copper, aluminum, rustless steel, hard anodized aluminum or plastics.
9. laser medical beauty treatment Laser Diode System according to claim 3, it is characterized in that: described semiconductor laser is that chip of laser is encapsulated on the heat sink, heat sink is micro-channel heat sink, grand passage is heat sink or metal derby; Chip of laser is single-shot luminous point chip or multiple luminous point chip.
10. laser medical beauty treatment Laser Diode System according to claim 3, it is characterized in that: the bottom of described semiconductor laser array is provided with insulating barrier, and semiconductor laser array is mounted on the second water flowing piece through this insulating barrier.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210480076.XA CN102961185B (en) | 2012-11-22 | 2012-11-22 | semiconductor laser system for laser medical cosmetology |
| US14/646,439 US9510908B2 (en) | 2012-11-22 | 2013-11-21 | Semiconductor laser system for laser medical cosmetology |
| KR1020157016573A KR101667897B1 (en) | 2012-11-22 | 2013-11-21 | Semiconductor laser system for laser medical cosmetology |
| PCT/CN2013/087603 WO2014079375A1 (en) | 2012-11-22 | 2013-11-21 | Semiconductor laser system for laser medical cosmetology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210480076.XA CN102961185B (en) | 2012-11-22 | 2012-11-22 | semiconductor laser system for laser medical cosmetology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102961185A true CN102961185A (en) | 2013-03-13 |
| CN102961185B CN102961185B (en) | 2015-09-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210480076.XA Active CN102961185B (en) | 2012-11-22 | 2012-11-22 | semiconductor laser system for laser medical cosmetology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014079375A1 (en) * | 2012-11-22 | 2014-05-30 | 西安炬光科技有限公司 | Semiconductor laser system for laser medical cosmetology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867324A (en) * | 1997-01-28 | 1999-02-02 | Lightwave Electronics Corp. | Side-pumped laser with shaped laser beam |
| US6485484B1 (en) * | 1999-03-15 | 2002-11-26 | Altus Medical, Inc. | Hair removal device |
| CN1977431A (en) * | 2004-06-30 | 2007-06-06 | 皮雷利&C.有限公司 | Thermally controlled external cavity tuneable laser |
| CN102723663A (en) * | 2012-05-29 | 2012-10-10 | 武汉电信器件有限公司 | Coaxial laser component with a refrigerator |
| CN202977973U (en) * | 2012-11-22 | 2013-06-05 | 西安炬光科技有限公司 | Semiconductor laser system used for laser medical cosmetology |
-
2012
- 2012-11-22 CN CN201210480076.XA patent/CN102961185B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867324A (en) * | 1997-01-28 | 1999-02-02 | Lightwave Electronics Corp. | Side-pumped laser with shaped laser beam |
| US6485484B1 (en) * | 1999-03-15 | 2002-11-26 | Altus Medical, Inc. | Hair removal device |
| CN1977431A (en) * | 2004-06-30 | 2007-06-06 | 皮雷利&C.有限公司 | Thermally controlled external cavity tuneable laser |
| CN102723663A (en) * | 2012-05-29 | 2012-10-10 | 武汉电信器件有限公司 | Coaxial laser component with a refrigerator |
| CN202977973U (en) * | 2012-11-22 | 2013-06-05 | 西安炬光科技有限公司 | Semiconductor laser system used for laser medical cosmetology |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014079375A1 (en) * | 2012-11-22 | 2014-05-30 | 西安炬光科技有限公司 | Semiconductor laser system for laser medical cosmetology |
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| CN102961185B (en) | 2015-09-30 |
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Address after: 710077 high power semiconductor laser Industrial Park, Shaanxi, Xi'an, Shaanxi Province, No. 86, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Patentee before: Xi'an Focuslight Technology Co., Ltd. |