CN202960763U - Semiconductor laser system for laser medical cosmetology - Google Patents
Semiconductor laser system for laser medical cosmetology Download PDFInfo
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- CN202960763U CN202960763U CN 201220624575 CN201220624575U CN202960763U CN 202960763 U CN202960763 U CN 202960763U CN 201220624575 CN201220624575 CN 201220624575 CN 201220624575 U CN201220624575 U CN 201220624575U CN 202960763 U CN202960763 U CN 202960763U
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- semiconductor laser
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- fiber waveguide
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Abstract
The utility model provides a semiconductor laser system for laser medical cosmetology. A contact window can be in direct contact with skin. The semiconductor laser system for laser medical cosmetology comprises a semiconductor laser array, an optical waveguide positioned at the front end of the light emitting surface of the semiconductor laser array, a transparent contact window shaped as a convex boss and positioned at the light outlet end of the optical waveguide and a refrigerating block; the refrigerating block is provided with a base part and a hollow head part positioned above the base part, wherein the side walls of the contact window are integrally and closely attached and fastened by the front part of the hollow head part, a hollow sleeve of which one inner surface is provided with a high-reflective film in a plating manner is fixed in a cavity of the hollow head part, and the front end of the hollow sleeve supports against the rear end surface of the contact window; and the light outlet end of the optical waveguide is positioned in the hollow sleeve, and a gap is reserved between the optical waveguide and the hollow sleeve. Due to adoption of a unique refrigerating structure design, the temperature of the working end surface which is in direct contact with the skin can be close to an ice point; and in addition, the semiconductor laser system is compact and stable in structure.
Description
Technical field
This utility model belongs to the semiconductor laser application, is specifically related to the Laser Diode System for laser medical beauty treatment.
Background technology
The key areas that laser medicine is used as laser develops very fastly, progressively moves to maturity.Volume is little, lightweight because having, the life-span is long for semiconductor laser, low in energy consumption, wavelength covers wide characteristics, is specially adapted to the manufacturing of armarium.
At present the business laser depilation system that uses has: ruby laser (wavelength 694nm), alexandrite laser (wavelength 755nm), semiconductor laser (wavelength 810nm) and accent Q neodymium doped yttrium aluminium garnet laser (wavelength 1064nm).Wherein the semiconductor laser depilation has been proved to be a kind of safety and effective laser depilation mode.
According to estimates, the laser depilation operation of carrying out in global range in 2010 reaches 5,000,000 person-times.Semiconductor laser is the skin reconstruction operations in another important application of beauty treatment fields, is used for reduce wrinkle, skin care.Moisture absorption during laser is organized by dermal collagen produces heat effect, and the regeneration of stimulation collagen and reinventing makes the skin smooth delicacy that becomes, and recovers elasticity.In addition, laser also can be used for treating freckle, traumatic pigmentation, dispel tatoo, eyebrow tattooing, informer etc. are black, the cyanine pathological changes
Thermal source the most frequently used in ophthalmology is semiconductor laser, and semiconductor laser can be used for treating various Refractory Glaucomas, the intractable high intraocular pressure of Silicone oil injection postoperative, and amphiblestroid light is solidifying and fixing etc.
Full-fledged along with semiconductor laser technique, self distinctive advantage constantly increase, its in the application of medical field also in continuous expansion, nearly cover the range of application of other laser instrument.It has not only made up high energy CO laser and has been difficult for fiber-optic transfer, unhandy shortcoming, and has made up the shortcoming that lamp light-pumped solid state laser efficient is low, heat radiation bothers, and is expected to become the main flow of medical laser.
Chinese patent Granted publication number discloses the apparatus for laser depilation of Japanese refined awns company limited utility model for CN1452465.This device adopts output 5mW-1500mw, and the semiconductor laser of wavelength 600nm-1600nm loses hair or feathers, because system's output is low, spot size is little, and wavelength output is also non-adjustable, and depilation efficient is very low.
The utility model content
The purpose of this utility model is to overcome the shortcoming of above-mentioned background technology, is provided for the Laser Diode System of laser medical beauty treatment, and this utility model contact hole can be directly and contact skin.
The purpose of this utility model solves by the following technical programs:
Be used for the Laser Diode System of laser medical beauty treatment, comprise
The semiconductor laser array that is formed by the stack of a plurality of semiconductor lasers,
Be positioned at semiconductor laser array light-emitting area front end fiber waveguide,
Be positioned at fiber waveguide light-emitting window end boss shape transparent contact hole and
In order to contact hole is conducted cooling cold-making block;
Described cold-making block is divided into basilar part and is positioned at the hollow type head of basilar part top, the front portion of this hollow type head is with the whole applying fastening of the sidewall of contact hole, be fixedly installed the hollow sleeve that an inner surface is coated with high-reflecting film in the cavity of hollow type head, the front end of hollow sleeve holds out against the rear end face of contact hole; Fiber waveguide light-emitting window end is positioned at hollow sleeve, and and hollow sleeve between leave the space;
The thermoelectric semiconductor refrigerator is set below the basilar part of cold-making block, is provided with the first water flowing piece below thermoelectric semiconductor refrigerator (TEC); Semiconductor laser array is equipped with the second water flowing piece for heat radiation.
Based on above-mentioned basic technical scheme, this utility model has also been done following optimization and has been limited and improve.
Above-mentioned hollow sleeve is connected and fixed by the inwall of the some way of contact (such as being threaded) with the hollow type head.
The material of above-mentioned hollow sleeve preferably adopts copper, and corresponding high-reflecting film is gold-plated or silver coating.
Liquid cooling passage in above-mentioned the first water flowing piece and the second water flowing piece can be independent separately, also can be in series.
Above-mentioned fiber waveguide integral body is prism, terrace with edge, cylinder or truncated cone-shaped.
Above-mentioned fiber waveguide is positioned at semiconductor laser array light-emitting area front end, apart from semiconductor laser array light-emitting area 0.5-5.0 millimeter.
The material of above-mentioned contact hole can be sapphire or K9 glass, quartz glass, diamond etc., take sapphire as best.
Above-mentioned contact hole and fiber waveguide are the integral piece that sapphire or diamond are made.
The material of above-mentioned cold-making block preferably adopts copper, aluminum, ferrum, gold plated copper, gold-plated aluminum, rustless steel or diamond.The material of above-mentioned the first water flowing piece and the second water flowing piece can be copper, aluminum, rustless steel, hard anodized aluminum, plastics.
Above-mentioned fiber waveguide is clamped on the basilar part or the first water flowing piece of cold-making block by fixed block.
Above-mentioned semiconductor laser can be that chip of laser is encapsulated on heat sink, and heat sink can be micro-channel heat sink, grand passage is heat sink or metal derby; Chip of laser can be single-shot luminous point chip, can be also multiple luminous point chip.
The utlity model has following beneficial effect:
1, the fast axle angle of divergence of semiconductor laser array mini-bus bar quick shaft direction is 30～40 degree usually, and the slow axis angle of divergence is 5～10 degree; Use fiber waveguide transmission laser, confine optical beam is dispersed, and by Multi reflection, therefore the hot spot of final outgoing is obtained uniform light spots by homogenize to light beam in fiber waveguide.
2, adopt unique refrigeration structure design, make the operative end surface temperature that directly contacts with skin can be near freezing point, and compact conformation, stablize.
3, adopt thermoelectric semiconductor refrigerator (TEC) as cooling source, the temperature of regulating cold-making block is freezed to contact hole, and chilling temperature can be low to moderate 5 ℃ of left and right (freezing point), the pain when having effectively reduced treatment.
4, coupling setting has the water flowing piece of liquid cooling passage, and radiating efficiency is high; In addition, water flowing piece under the thermoelectric semiconductor refrigerator also can consist of a channels in series with the liquid cooling passage of the miscellaneous part such as semiconductor laser array is whole, semiconductor laser array and semiconductor thermoelectric refrigeration device (TEC) cooling water channel are cascaded structure, connect by the water flowing piece, simple in structure, overcome each uncontrollable shortcoming in branch road water route of traditional water route in parallel, effectively guaranteed the cooling of semiconductor laser, made laser works more reliable and more stable.
5, contact hole adopts the boss design, assists entering of article such as epoxy resin etc. when having stopped treatment, makes laser works more reliable and more stable; Simultaneously contact hole change easy, during use can with skin attachement, the contact site temperature had both protected normal skin not to be subjected to the hot injury near freezing point effectively, eased the pain, and can increase the treatment energy again, improved curative effect; Contact hole presses down skin simultaneously, makes the hair follicle lodging, makes the absorbtivity of laser increase 30%-40%.
6, in the cold-making block hollow head, hollow sleeve is set, fiber waveguide bright dipping end is wrapped in hollow sleeve, and and hollow sleeve between leave air-gap; Can make the issuable light leak of fiber waveguide only in the hollow sleeve internal reflection, the laser of avoiding spilling is beaten and affect cold-making block to the refrigeration of skin contact part (contact window) on cold-making block, and the while hollow sleeve also plays the effect that holds out against to contact hole.
Description of drawings
Fig. 1 is this utility model example structure schematic diagram;
Fig. 2 is hollow type head and the contact hole connection layout of this utility model cold-making block.
Drawing reference numeral explanation: 1 semiconductor laser array; 2 fiber waveguides; 3 contact holes; 4 cold-making blocks; 5 semiconductor thermoelectric refrigeration devices; 6 water flowing pieces; 7 chip of laser; 8 heat sinks; 9 water inlets; 10 outlets; 11 hollow sleeves; 12 first fixed blocks; 13 second fixed blocks.
The specific embodiment
Below in conjunction with accompanying drawing, this utility model is described in further detail:
Referring to Fig. 1, Laser Diode System for laser medical beauty treatment of the present utility model, the transparent contact hole 3 of the boss shape that comprise the semiconductor laser array 1, the fiber waveguide 2 that is positioned at semiconductor laser array 1 light-emitting area front end that are formed by the stack of a plurality of semiconductor lasers, is positioned at fiber waveguide light-emitting window end and in order to contact hole 3 is conducted cooling cold-making block 4.
Fiber waveguide is positioned at semiconductor laser array light-emitting area front end, apart from semiconductor laser array light-emitting area 0.5-5.0 millimeter.
According to the practical application needs, the material of fiber waveguide 2 can be metal, and fiber waveguide is hollow, and in fiber waveguide, four faces all are coated with reflectance coating; The material of fiber waveguide can be also transparent material, and as glass, resin, sapphire, diamond etc., fiber waveguide both can be for solid, also can be for hollow.Further improve energy density as needs, fiber waveguide 2 can adopt has terrace with edge shape or the truncated cone-shaped that light beam converges effect.
Cold-making block 4 is divided into basilar part and is positioned at the hollow type head of basilar part top, the front portion of this hollow type head is with the whole applying fastening of the sidewall of contact hole 3, be fixedly installed the hollow sleeve 11 that an inner surface is coated with high-reflecting film in the cavity of hollow type head, the front end of hollow sleeve 11 holds out against the rear end face of contact hole 3; Fiber waveguide 2 light-emitting window ends are positioned at hollow sleeve 11, and and hollow sleeve between leave the space;
Fiber waveguide is clamped on the basilar part or the first water flowing piece of cold-making block jointly by the first fixed block 12 and the second fixed block 13.Fixed block generally adopts grooved.
The material of contact hole can be sapphire or K9 glass, quartz glass, diamond etc., take sapphire as best.The Optimum Matching of contact hole and fiber waveguide is the integral piece that sapphire or diamond are made.
The material of cold-making block preferably adopts copper, aluminum, ferrum, gold plated copper, gold-plated aluminum, rustless steel or diamond.The material of the first water flowing piece and the second water flowing piece can be copper, aluminum, rustless steel, hard anodized aluminum, plastics.
Each semiconductor laser can be that chip of laser 7 is encapsulated on heat sink 8, and heat sink can be micro-channel heat sink, grand passage is heat sink or metal derby; Chip of laser can be single-shot luminous point chip, can be also multiple luminous point chip.
Claims (8)
1. be used for the Laser Diode System of laser medical beauty treatment, it is characterized in that: comprise
The semiconductor laser array that is formed by the stack of a plurality of semiconductor lasers,
Be positioned at semiconductor laser array light-emitting area front end fiber waveguide,
Be positioned at fiber waveguide light-emitting window end boss shape transparent contact hole and
In order to contact hole is conducted cooling cold-making block;
Described cold-making block is divided into basilar part and is positioned at the hollow type head of basilar part top, the front portion of this hollow type head is with the whole applying fastening of the sidewall of contact hole, be fixedly installed the hollow sleeve that an inner surface is coated with high-reflecting film in the cavity of hollow type head, the front end of hollow sleeve holds out against the rear end face of contact hole; Fiber waveguide light-emitting window end is positioned at hollow sleeve, and and hollow sleeve between leave the space;
The thermoelectric semiconductor refrigerator is set below the basilar part of cold-making block, is provided with the first water flowing piece below the thermoelectric semiconductor refrigerator; Semiconductor laser array is equipped with the second water flowing piece for heat radiation.
2. the Laser Diode System for laser medical beauty treatment according to claim 1, it is characterized in that: described hollow sleeve is connected and fixed by the inwall of a way of contact and hollow type head.
3. the Laser Diode System for laser medical beauty treatment according to claim 1 and 2, it is characterized in that: described hollow sleeve is to be provided as the gold-plated or silver coating of high-reflecting film at sleeve body inwall made of copper.
4. the Laser Diode System for laser medical beauty treatment according to claim 3 is characterized in that: the liquid cooling passage in described the first water flowing piece and the second water flowing piece is independence or be in series separately.
5. the Laser Diode System for laser medical beauty treatment according to claim 3 is characterized in that: described fiber waveguide is whole is prism, terrace with edge, cylinder or truncated cone-shaped.
6. the Laser Diode System for laser medical beauty treatment according to claim 3, it is characterized in that: described fiber waveguide is positioned at semiconductor laser array light-emitting area front end, apart from semiconductor laser array light-emitting area 0.5-5.0 millimeter.
7. the Laser Diode System for laser medical beauty treatment according to claim 3, it is characterized in that: described contact hole and fiber waveguide are the integral piece that sapphire or diamond are made.
8. the Laser Diode System for laser medical beauty treatment according to claim 3, it is characterized in that: described fiber waveguide is to be clamped on the basilar part or the first water flowing piece of cold-making block by fixed block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220624575 CN202960763U (en) | 2012-11-22 | 2012-11-22 | Semiconductor laser system for laser medical cosmetology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220624575 CN202960763U (en) | 2012-11-22 | 2012-11-22 | Semiconductor laser system for laser medical cosmetology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202960763U true CN202960763U (en) | 2013-06-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220624575 Withdrawn - After Issue CN202960763U (en) | 2012-11-22 | 2012-11-22 | Semiconductor laser system for laser medical cosmetology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202960763U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102973316A (en) * | 2012-11-22 | 2013-03-20 | 西安炬光科技有限公司 | Semi-conductor laser system for laser medical beautification |
| WO2014079375A1 (en) * | 2012-11-22 | 2014-05-30 | 西安炬光科技有限公司 | Semiconductor laser system for laser medical cosmetology |
-
2012
- 2012-11-22 CN CN 201220624575 patent/CN202960763U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102973316A (en) * | 2012-11-22 | 2013-03-20 | 西安炬光科技有限公司 | Semi-conductor laser system for laser medical beautification |
| WO2014079375A1 (en) * | 2012-11-22 | 2014-05-30 | 西安炬光科技有限公司 | Semiconductor laser system for laser medical cosmetology |
| CN102973316B (en) * | 2012-11-22 | 2015-04-01 | 西安炬光科技有限公司 | Semi-conductor laser system for laser medical beautification |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130605 Effective date of abandoning: 20150401 |
|
| RGAV | Abandon patent right to avoid regrant |