CN102956546A - Copper interconnection structure and forming method thereof - Google Patents
Copper interconnection structure and forming method thereof Download PDFInfo
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- CN102956546A CN102956546A CN2011102526982A CN201110252698A CN102956546A CN 102956546 A CN102956546 A CN 102956546A CN 2011102526982 A CN2011102526982 A CN 2011102526982A CN 201110252698 A CN201110252698 A CN 201110252698A CN 102956546 A CN102956546 A CN 102956546A
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Abstract
The invention provides a copper interconnection structure and a forming method of the copper interconnection structure. The forming method of the copper interconnection structure provided by the invention comprises the steps of providing a semiconductor lining, wherein a first medium layer and a first interconnection structure running through the first medium layer are formed on the surface of the semiconductor lining; forming a second medium layer on the surfaces of the first medium layer and the first interconnection structure, wherein the material of the second medium layer contains oxygen atoms, and the second medium layer is provided with a through hole for exposing the first interconnection structure; forming alloy blocking layers on the side wall and the bottom part of the through hole; and forming copper layers completely filling the through hole on the surfaces of the alloy blocking layers. The forming method provided by the invention is simple in technique, low in cost and capable of reducing the resistivity of the copper interconnection structure.
Description
Technical field
The present invention relates to semiconductor applications, particularly copper interconnection structure and forming method thereof.
Background technology
Along with the development of semiconductor technology, the integrated level of VLSI (very large scale integrated circuit) chip is up to the scale of several hundred million and even tens devices, and two-layer above multiple layer metal interconnection technique is widely used.Traditional metal interconnectedly made by aluminum metal, but along with constantly reducing of device feature size in the integrated circuit (IC) chip, current density in the metal interconnecting wires constantly increases, the response time that requires constantly reduces, the conventional aluminum interconnection line can not meet the demands, process less than 130nm after, the copper interconnecting line technology has been substituted the aluminum interconnecting technology.Compare with aluminium, the resistivity of metallic copper is lower, and the resistance capacitance (RC) that copper interconnecting line can reduce interconnection line postpones, and improves electromigration, improves device reliability.
In publication number is the United States Patent (USP) of US2006/0286797A1, disclose a kind of formation method of copper interconnection structure, having comprised:
With reference to figure 1, Semiconductor substrate 100 is provided, described Semiconductor substrate 100 surfaces are formed with the first interconnection structure 110, and described the first interconnection structure 110 surfaces form first medium layer 120, and described first medium layer 120 has the through hole 130 that exposes described the first interconnection structure 110;
With reference to figure 2, form barrier layer 140 in sidewall and the bottom of described through hole 130, described barrier layer 140 comprises tantalum nitride layer and the tantalum layer that forms successively;
With reference to figure 3, adopt the method for PVD to form alloy Seed Layer 150 on the surface on described barrier layer 140, the material of described alloy Seed Layer 150 is albronze or cupromanganese, and it is to improve the electron transfer reliability of the copper interconnection structure of follow-up formation that described alloy Seed Layer 150 adopts the benefit of alloy material;
With reference to figure 4, form the metal copper layer 160 of filling full described through hole on described alloy Seed Layer 150 surfaces, also comprise in the subsequent process described metal copper layer 160 is carried out smooth processing, until expose first medium layer 120, form the copper interconnection structure that is formed by barrier layer, alloy Seed Layer 150 and metal copper layer 160.The effect of described tantalum nitride layer is the follow-up formation copper interconnection structure of isolation and first medium layer 120, and described tantalum layer can increase the adhesion between copper interconnection structure and the described tantalum nitride layer.
But the said method complex process, and the resistance value ratio of formed copper interconnection structure is larger.
Summary of the invention
The problem that the present invention solves provides a kind of copper interconnection structure and forming method thereof, and is large to solve existing copper interconnection structure resistance, forms the problem of complex process.
For addressing the above problem, the formation method of a kind of copper interconnection structure of the present invention comprises:
Provide Semiconductor substrate, the first interconnection structure that described semiconductor substrate surface is formed with the first medium layer and runs through described first medium layer;
Form the second medium layer at described first medium layer and the first interconnection structure surface, the material of described second medium layer contains oxygen atom, and described second medium layer has the through hole that exposes described the first interconnection structure;
The alloy barrier layer is formed on sidewall and bottom at described through hole;
Form the copper layer of filling full described through hole on described alloy barrier layer surface.
Alternatively, also comprise described copper interconnection structure is carried out annealing in process, make the metallic atom diffusion in described oxygen atom and the alloy barrier layer and react.
Alternatively, described alloy barrier layer is the 20-50 dust at the thickness of the sidewall of described through hole, is the 50-100 dust at the thickness of described via bottoms.
Alternatively, the material of described alloy barrier layer is manganese-tantalum alloy, perhaps aluminium-tantalum alloy, perhaps titanium-tantalum alloy.
Alternatively, the temperature of described annealing in process is 100-400 degree centigrade, and the annealing duration is 1-30 minute, and anneal gas is hydrogen and nitrogen.
Alternatively, in the described anneal gas, the shared volume ratio of hydrogen is 0-20%.
Alternatively, described second medium layer is low-k materials.
Alternatively, also be included in described copper interconnection structure surface and form cover layer, described tectal material is silicon-carbon nitrogen.
Correspondingly, the present invention also provides a kind of copper interconnection structure, comprising: Semiconductor substrate, described semiconductor substrate surface are formed with the first medium layer and run through the first interconnection structure of described first medium layer; Be positioned at the second medium layer on described first medium layer and the first interconnection structure surface, the material of described second medium layer contains oxygen atom, and described second medium layer has the through hole that exposes described the first interconnection structure; Be positioned at the alloy barrier layer of described through-hole side wall and bottom; Be positioned at described alloy barrier layer surface, and fill the copper layer of full described through hole.
Alternatively, also comprise the alloyed oxide that the oxygen atom reaction in described alloy barrier layer and the second medium layer generates.
Alternatively, the material of described alloy barrier layer is manganese-tantalum alloy, perhaps aluminium-tantalum alloy, perhaps titanium-tantalum alloy.
Alternatively, described alloy barrier layer is the 20-50 dust at the thickness of the sidewall of described through hole, is the 50-100 dust at the thickness of described via bottoms.
Alternatively, the material of described second medium layer is low-k materials.
Compared with prior art, technical scheme of the present invention has the following advantages:
The formation method of the copper interconnection structure of the embodiment of the invention forms the copper layer on described alloy barrier layer surface, the material of described copper layer is copper, avoid metallic atom outside the copper of metal seed layer of prior art alloy to assemble and moved between metal seed layer and the barrier layer, caused the defective that the copper interconnection structure resistance increases; The material of the described alloy barrier layer of the embodiment of the invention is metal alloy, compare with the tantalum layer barrier layer with the tantalum nitride layer of prior art, have the low advantage of resistance, thereby can reduce the resistivity of the copper interconnection structure that the copper interconnection structure formation method of the embodiment of the invention forms.
Further, the formation method of the copper interconnection structure of the embodiment of the invention forms the alloy barrier layer in the through-hole surfaces that is positioned at the second medium layer first; Form the copper layer on described alloy barrier layer surface again; Carry out annealing in process after forming the copper layer; In annealing in process, oxygen atom in the described second medium layer and the diffusion of the metallic atom one way or another in the described alloy barrier layer, the meeting at the interface and reacting at second medium layer and alloy barrier layer in the process of diffusion of oxygen atom and metallic atom, formation can stop that copper atom spreads to the second medium layer in the copper layer, stop simultaneously the alloyed oxide that the oxygen atom in the second medium layer spreads to the copper layer, and formed alloyed oxide resistivity is little, thereby can reduce the resistivity of copper interconnection structure.
Further, the metallic atom in the described alloy barrier layer is diffused in the copper layer, can reduce the electromigration of copper interconnection structure, improves the reliability of copper interconnection structure.
Further, alloy barrier layer of the present invention is single layer structure, and the technique that forms the alloy barrier layer is simple, and efficient is high.
The copper interconnection structure of the embodiment of the invention is with the tantalum nitride/tantalum double-decker in the alloy barrier layer replacement existing structure, and the resistivity of alloy barrier layer is little, so reduced the resistivity of copper interconnection structure.
Further the copper interconnection structure of the embodiment of the invention also comprises the alloyed oxide that alloy barrier layer and the reaction of second medium layer form, described alloyed oxide can improve the diffusion barrier effect of alloy barrier layer, and the copper interconnection structure reliability that the embodiment of the invention provides is high.
Description of drawings
Fig. 1 to Fig. 4 is the cross-sectional view of existing copper interconnection structure forming process;
Fig. 5 is the schematic flow sheet of the copper interconnection structure formation method that provides of embodiments of the invention;
Fig. 6 to Figure 10 is the cross-sectional view of the copper interconnection structure forming process that provides of embodiments of the invention.
Embodiment
By background technology as can be known, the existing formed copper interconnection structure resistance value of method is larger, and complex process.Please continue with reference to figure 4, the inventor studies for the problems referred to above, think that the existing larger main cause of the formed copper interconnection structure resistance value of method is: the metallic atom outside the copper in the metal seed layer 150 (such as: the aluminium in the albronze or the manganese in the cupromanganese) can gather together and move between metal seed layer 150 and the barrier layer 140, thus the resistance that causes copper interconnection structure increases; In addition, because it is larger to be positioned at the resistance value ratio of the tantalum nitride bottom the copper interconnection structure, so the copper interconnection structure bottom resistance can be larger.
The inventor further studies for the problems referred to above, and a kind of copper interconnection structure formation method is provided in an embodiment of the present invention, and Fig. 5 is the schematic flow sheet of copper interconnection structure formation method provided by the present invention, comprising:
Step S101 provides Semiconductor substrate, the first interconnection structure that described semiconductor substrate surface is formed with the first medium layer and runs through described first medium layer;
Step S102 forms the second medium layer at described first medium layer and the first interconnection structure surface, and the material of described second medium layer contains oxygen atom, and described second medium layer has the through hole that exposes described the first interconnection structure;
Step S103 forms the alloy barrier layer in sidewall and the bottom of described through hole;
Step S104 forms the copper layer of filling full described through hole on described alloy barrier layer surface;
Step S105 carries out annealing in process to described copper interconnection structure, makes the metallic atom diffusion in described oxygen atom and the alloy barrier layer and reacts.
In order to further specify spirit of the present invention and essence, hereinafter, the present invention will be described in detail in conjunction with the accompanying drawings and embodiments.
Fig. 6 to Figure 10 is the cross-sectional view of the copper interconnection structure forming process that provides of embodiments of the invention.
With reference to figure 6, provide Semiconductor substrate 200, the first interconnection structure 210 that described Semiconductor substrate 200 surfaces are formed with first medium layer 220 and run through described first medium layer 220.
In the present embodiment, described Semiconductor substrate 200 is silicon substrate or SOI substrate, and in the described Semiconductor substrate 200 and/or surface also is formed with other semiconductor device (not shown).
The material of described the first interconnection structure 210 is any electric conducting materials that can be used for interconnection structure, such as copper or tungsten.Because the speed that copper spreads in silicon materials is very fast, so in the present embodiment, the material that is formed directly into the bottom interconnection structure on silicon materials surface does not adopt copper.
With reference to figure 7, form second medium layer 230 at described first medium layer 220 and the first interconnection structure 210 surfaces, the material of described second medium layer 230 contains oxygen atom, and described second medium layer 230 has the through hole that exposes described the first interconnection structure 210.
In the present embodiment, adopt first plasma reinforced chemical vapour deposition technique to form described second medium layer 230; Then form the first mask layer on described second medium layer 230 surface, described the first mask layer has the first opening, and the position of described the first opening is corresponding with the position of described through hole; Then along the described second medium layer 230 of described the first opening etched portions thickness, form the first through hole 240a; After forming the first through hole 240a, form the second mask layer in the bottom of described the first through hole 240a, described the second mask layer has the second opening, and the width of described the second opening is less than the width of described the first opening; Along the described second medium layer 230 of described the second opening etching, until expose described the first interconnection structure 210, form the second through hole 240b again.Described the first through hole 240a and the second through hole 240b consist of the through hole that exposes described the first interconnection structure 210.
In the present embodiment, the material of described second medium layer 230 is low-k materials (the k value is lower than 3.0), and described second medium layer 230 is comprised of elements such as silicon, carbon, oxygen, hydrogen.In one embodiment, the material of described second medium layer 230 is black diamonds.
The degree of depth and the width of described the first through hole 240a and the second through hole 240b can be regulated according to arts demand.In other embodiments, described through hole can also have different structures and shape.
With reference to figure 8, form alloy barrier layer 250 in sidewall and the bottom of described through hole.
Described alloy barrier layer 250 is single coating, for example is the single coating of manganese tantalum alloy, the single coating of aluminium tantalum alloy, or the single coating of titanium tantalum alloy.
In the present embodiment, the formation technique of described alloy barrier layer 250 is physical gas-phase deposition (PVD).
In the present embodiment, described alloy barrier layer 250 is the 20-50 dust at the thickness of the sidewall of described through hole, is the 50-100 dust at the thickness of described via bottoms.If the thickness of described alloy barrier layer 250 is too small, possibly can't stop copper atom in the copper layer of follow-up formation to described second medium layer 230 diffusion, can't stop that also oxygen atom in the described second medium layer 230 is to the copper layer diffusion of follow-up formation; If the thickness of described alloy barrier layer 250 is excessive, can reduces the width of the copper layer of follow-up formation, thereby increase resistance value.
Again because adopting PVD technique to form in the process of described alloy barrier layer 250, upper surface at described second medium layer 230, the sidewall of described through hole, the deposition rate of the bottom of described through hole is different, the speed of growth at the sidewall of through hole is the slowest, the speed of growth at the upper surface of described second medium layer 230 is the fastest, so for so that described alloy barrier layer 250 is enough thick in enough barrier effects can be provided at the sidewall of described through hole, described alloy barrier layer is the 20-50 dust at the thickness of the sidewall of described through hole, thickness in described via bottoms is the 50-100 dust, and the thickness on described second medium layer 230 surface is the 50-150 dust.
In the present embodiment, the material of described alloy barrier layer 250 is manganese tantalum alloys, and in other embodiments of the invention, the material of described alloy barrier layer 250 can also be the aluminium tantalum alloy, perhaps the titanium tantalum alloy.Adopt the little alloy material of resistance value to form the barrier layer in the present embodiment, reduced the resistance value of interconnection structure, described alloy material in follow-up annealing process can also with the second medium layer in oxygen atom form the low alloyed oxide of resistivity, described alloyed oxide can improve the barrier effect of 250 pairs of atoms diffusion of alloy barrier layer.
With reference to figure 9, form the copper layer 260 of filling full described through hole on described alloy barrier layer 250 surface.
The step that forms described copper layer comprises: adopt PVD technique to form copper seed layer on described alloy barrier layer 250 surface, described copper seed layer material is copper.
Take described copper seed layer as anode, adopt electroplating technology to form the copper body layer of filling full described through hole on described copper seed layer surface, the material of described copper body layer is copper, and described copper body layer carried out planarization, until expose described second medium layer 230, described copper body layer and copper seed layer consist of copper layer 260 after the planarization.
With reference to Figure 10, described copper interconnection structure is carried out annealing in process, make the metallic atom diffusion in described oxygen atom and the alloy barrier layer 250 and react.
The temperature of described annealing in process is 100-400 degree centigrade, and the annealing duration is 1-30 minute, and anneal gas is hydrogen and nitrogen.Preferably, the shared volume ratio of hydrogen is 0-20%.
Adopting electroplating technology to form in the step of copper body layer, the oxygen atom that can comprise inevitably trace in the copper body layer, in hydrogen environment, anneal, be conducive to reduce the oxygen content in the copper body layer, and reduce the oxygen content in the copper body layer, be conducive to increase the volume of copper crystal grain, after the copper crystal particle volume increases, the gross area at the intercrystalline interface of copper can reduce, and the area at the interface of copper intergranule reduces correspondingly to reduce electronics in the scattering of copper grain surface, thereby is conducive to reduce resistance.In addition on the one hand, the oxygen content that reduces in the copper body layer can avoid the reliability of copper interconnection structure to reduce.Reason is: in annealing process, tantalum in the alloy barrier layer 250 can with copper body layer in oxygen atom (oxygen atom can spread in annealing process) oxidation reaction occurs, thereby can destroy the interface of alloy barrier layer 250 and copper, cause the reliability of copper interconnection structure to reduce.
Simultaneously, in above-mentioned annealing process, the oxygen atom 10 in the described second medium layer 230 can be towards the different directions diffusion, and a part of oxygen atom 10 can be diffused into the interface of described second medium layer 230 and alloy barrier layer 250; Metallic atom 20 in the alloy barrier layer 250 also can the one way or another diffusion simultaneously.Material take alloy barrier layer 250 is that the manganese tantalum alloy is as example, oxygen atom 10 and metallic atom 20 concurrent biochemical reaction of meeting at the interface at alloy barrier layer 250 and second medium layer 230 in diffusion process, form manganese tantalum alloy oxide, formed manganese tantalum alloy oxide can stop effectively that the copper atom in the copper layer 260 spreads to described second medium layer 230, effectively stops that the oxygen atoms in the described second medium layer 230 spread to copper layer 260 simultaneously.
Be the aluminium tantalum alloy at alloy material, perhaps among the embodiment of titanium tantalum alloy, form accordingly aluminium tantalum alloy oxide, or titanium tantalum alloy oxide.
In above-mentioned annealing process, also have the metallic atom 20 of part can be diffused in the copper layer 260, after metallic atom 20 is diffused into copper layer 260, can improve the electron transfer reliability of the copper interconnection structure that is formed by copper layer 260 and alloy barrier layer 270.
Subsequent technique also is included in described copper interconnection structure surface and second medium layer 230 surface form cover layer, and described tectal material is silicon-carbon nitrogen.Described cover layer can prevent the copper atom diffusion in the interconnection structure.
Embodiments of the invention form the alloy barrier layer between copper layer and second medium layer, described copper layer and alloy barrier layer consist of copper interconnection structure; And described copper interconnection structure carried out annealing in process; In annealing process, the metallic atom generation chemical reaction in the oxygen atom in the second medium layer and the alloy barrier layer, formation can stop the alloyed oxide that copper atom spreads to the copper layer to the diffusion of second medium layer, oxygen atom.Metallic atom in the alloy barrier layer is diffused into the electron transfer reliability that the copper layer can improve copper interconnection structure simultaneously.Form tantalum nitride-tantalum double-decker with respect to prior art and stop that copper atom spreads to the copper layer to the diffusion of second medium layer, oxygen atom, form the alloy Seed Layer to improve the electron transfer reliability of copper interconnection structure, embodiments of the invention technique is simple, cost is low, and formed copper interconnection structure resistance is little.
Correspondingly, the present invention also provides a kind of copper interconnection structure, Fig. 9 is the structural representation of the copper interconnection structure that provides of embodiments of the invention, comprise: Semiconductor substrate 200, the first interconnection structure 210 that described Semiconductor substrate 200 surfaces are formed with first medium layer 220 and run through described first medium layer 220; Be positioned at the second medium layer 230 on described first medium layer 220 and the first interconnection structure 210 surfaces, the material of described second medium layer 230 contains oxygen atom, and described second medium layer 230 has the through hole that exposes described the first interconnection structure 210; Be positioned at the alloy barrier layer 250 of described through-hole side wall and bottom; Be positioned at described alloy barrier layer 250 surface, and fill the copper layer 260 of full described through hole.
Particularly, the material of described alloy barrier layer 250 is manganese-tantalum alloys, perhaps aluminium-tantalum alloy, perhaps titanium-tantalum alloy.When the material of described alloy barrier layer 250 is manganese-tantalum alloy, also comprise manganese tantalum alloy oxide in the described alloy barrier layer 250; When the material of described alloy barrier layer 250 is aluminium-tantalum alloy, also comprise aluminium tantalum alloy oxide in the described alloy barrier layer 250; When the material of described alloy barrier layer 250 is titanium-tantalum alloy, also comprise titanium tantalum alloy oxide in the described alloy barrier layer 250.Described manganese tantalum alloy oxide or aluminium tantalum alloy oxide or titanium tantalum alloy oxide can stop effectively that the copper atom in the copper layer spreads to the copper layer to the oxygen atom in the diffusion of second medium layer, the second medium layer.
Described alloy barrier layer is the 20-50 dust at the thickness of the sidewall of described through hole, is the 50-100 dust at the thickness of described via bottoms.
Described first medium layer is low-k materials.
To sum up, technical scheme of the present invention has the following advantages:
The formation method of the copper interconnection structure of the embodiment of the invention forms the copper layer on described alloy barrier layer surface, the material of described copper layer is copper, avoid metallic atom outside the copper of metal seed layer of prior art alloy to assemble and moved between metal seed layer and the barrier layer, caused the defective that the copper interconnection structure resistance increases; The material of the described alloy barrier layer of the embodiment of the invention is metal alloy, compare with the tantalum layer barrier layer with the tantalum nitride layer of prior art, have the low advantage of resistance, thereby can reduce the resistivity of the copper interconnection structure that the copper interconnection structure formation method of the embodiment of the invention forms.
Further, the formation method of the copper interconnection structure of the embodiment of the invention forms the alloy barrier layer in the through-hole surfaces that is positioned at the second medium layer first; Form the copper layer on described alloy barrier layer surface again; Carry out annealing in process after forming the copper layer; In annealing in process, oxygen atom in the described second medium layer and the diffusion of the metallic atom one way or another in the described alloy barrier layer, the meeting at the interface and reacting at second medium layer and alloy barrier layer in the process of diffusion of oxygen atom and metallic atom, formation can stop that copper atom spreads to the second medium layer in the copper layer, stop simultaneously the alloyed oxide that the oxygen atom in the second medium layer spreads to the copper layer, and formed alloyed oxide resistivity is little, thereby can reduce the resistivity of copper interconnection structure.
Further, the metallic atom in the described alloy barrier layer is diffused in the copper layer, can reduce the electromigration of copper interconnection structure, improves the reliability of copper interconnection structure.
Further, alloy barrier layer of the present invention is single layer structure, and the technique that forms the alloy barrier layer is simple, and efficient is high.
The copper interconnection structure of the embodiment of the invention is with the tantalum nitride/tantalum double-decker in the alloy barrier layer replacement existing structure, and the resistivity of alloy barrier layer is little, so reduced the resistivity of copper interconnection structure.
Further the copper interconnection structure of the embodiment of the invention also comprises the alloyed oxide that alloy barrier layer and the reaction of second medium layer form, described alloyed oxide can improve the diffusion barrier effect of alloy barrier layer, and the copper interconnection structure reliability that the embodiment of the invention provides is high.Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (13)
1. the formation method of a copper interconnection structure is characterized in that, comprising:
Provide Semiconductor substrate, the first interconnection structure that described semiconductor substrate surface is formed with the first medium layer and runs through described first medium layer;
Form the second medium layer at described first medium layer and the first interconnection structure surface, the material of described second medium layer contains oxygen atom, and described second medium layer has the through hole that exposes described the first interconnection structure;
The alloy barrier layer is formed on sidewall and bottom at described through hole;
Form the copper layer of filling full described through hole on described alloy barrier layer surface.
2. the formation method of copper interconnection structure as claimed in claim 1 is characterized in that, also comprises:
Described copper layer and described alloy barrier layer are carried out annealing in process, make the metallic atom diffusion in described oxygen atom and the alloy barrier layer and the formation alloyed oxide that reacts.
3. the formation method of copper interconnection structure as claimed in claim 1 is characterized in that, described alloy barrier layer is the 20-50 dust at the thickness of the sidewall of described through hole, is the 50-100 dust at the thickness of described via bottoms.
4. the formation method of copper interconnection structure as claimed in claim 1 is characterized in that, the material of described alloy barrier layer is manganese-tantalum alloy, perhaps aluminium-tantalum alloy, perhaps titanium-tantalum alloy.
5. the formation method of copper interconnection structure as claimed in claim 1 is characterized in that, the temperature of described annealing in process is 100-400 degree centigrade, and the annealing duration is 1-30 minute, and anneal gas is hydrogen and nitrogen.
6. the formation method of copper interconnection structure as claimed in claim 5 is characterized in that, in the described anneal gas, the shared volume ratio of hydrogen is 0-20%.
7. the formation method of copper interconnection structure as claimed in claim 1 is characterized in that, described second medium layer is low-k materials.
8. the formation method of copper interconnection structure as claimed in claim 1 is characterized in that, also is included in described copper interconnection structure surface and forms cover layer, and described tectal material is silicon-carbon nitrogen.
9. copper interconnection structure comprises: Semiconductor substrate, described semiconductor substrate surface are formed with the first medium layer and run through the first interconnection structure of described first medium layer; Be positioned at the second medium layer on described first medium layer and the first interconnection structure surface, the material of described second medium layer contains oxygen atom, and described second medium layer has the through hole that exposes described the first interconnection structure; It is characterized in that, also comprise:
Be positioned at the alloy barrier layer of described through-hole side wall and bottom;
Be positioned at described alloy barrier layer surface, and fill the copper layer of full described through hole.
10. copper interconnection structure as claimed in claim 9 is characterized in that, also comprises the alloyed oxide that the oxygen atom reaction in described alloy barrier layer and the second medium layer generates.
11. copper interconnection structure as claimed in claim 9 is characterized in that, the material of described alloy barrier layer is manganese-tantalum alloy, perhaps aluminium-tantalum alloy, perhaps titanium-tantalum alloy.
12. copper interconnection structure as claimed in claim 9 is characterized in that, described alloy barrier layer is the 20-50 dust at the thickness of the sidewall of described through hole, is the 50-100 dust at the thickness of described via bottoms.
13. copper interconnection structure as claimed in claim 9 is characterized in that, the material of described second medium layer is low-k materials.
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| CN107210286A (en) * | 2015-01-21 | 2017-09-26 | 高通股份有限公司 | IC-components and method |
| TWI641050B (en) * | 2016-01-25 | 2018-11-11 | 日商鋼臂功科研股份有限公司 | Wiring structure, display device, input device, touch panel and sputtering target |
| WO2018002737A1 (en) * | 2016-06-30 | 2018-01-04 | International Business Machines Corporation | Techniques to improve reliability in cu interconnects using cu intermetallics |
| GB2566243A (en) * | 2016-06-30 | 2019-03-06 | Ibm | Techniques to improve reliability in cu interconnects using cu intermetallics |
| US10461026B2 (en) | 2016-06-30 | 2019-10-29 | International Business Machines Corporation | Techniques to improve reliability in Cu interconnects using Cu intermetallics |
| US10818590B2 (en) | 2016-06-30 | 2020-10-27 | International Business Machines Corporation | Techniques to improve reliability in Cu interconnects using Cu intermetallics |
| GB2566243B (en) * | 2016-06-30 | 2021-02-24 | Ibm | Techniques to improve reliability in cu interconnects using cu intermetallics |
| US10943863B2 (en) | 2016-06-30 | 2021-03-09 | International Business Machines Corporation | Techniques to improve reliability in Cu interconnects using Cu intermetallics |
| CN109545740A (en) * | 2018-11-27 | 2019-03-29 | 德淮半导体有限公司 | Metal interconnection structure and forming method thereof |
| WO2021103136A1 (en) * | 2019-11-26 | 2021-06-03 | 深圳市华星光电半导体显示技术有限公司 | Thin-film transistor and manufacturing method therefor |
| CN115036270A (en) * | 2022-08-11 | 2022-09-09 | 广州粤芯半导体技术有限公司 | Method for manufacturing copper interconnection structure |
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