CN102956522A - Film crack detection apparatus and film forming apparatus - Google Patents
Film crack detection apparatus and film forming apparatus Download PDFInfo
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- CN102956522A CN102956522A CN2012102935654A CN201210293565A CN102956522A CN 102956522 A CN102956522 A CN 102956522A CN 2012102935654 A CN2012102935654 A CN 2012102935654A CN 201210293565 A CN201210293565 A CN 201210293565A CN 102956522 A CN102956522 A CN 102956522A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention provides a film crack detection apparatus and a film forming apparatus. The film crack detection apparatus for performing a film crack detection operation, which is mounted to the film forming apparatus having a processing vessel for receiving an object to be processed and forming a thin film on a surface of the object to be processed, includes an elastic wave detection unit mounted to the film forming apparatus to detect an elastic wave, and a determination unit to determine whether performing a cleaning process of the processing vessel is necessary based on a detection result of the elastic wave detection unit.
Description
This specification is based on the rights and interests of the priority of the Japanese patent application of on August 16th, 2011 application 2011-177991 number, and this Japanese publication content all is included in this as the reference file.
Technical field
The present invention relates to film forming film formation device and film rupture checkout gear mounted thereto on semiconductor crystal wafer etc.
Background technology
Generally, in order to make the semiconductor device such as semiconductor integrated circuit, the semiconductor crystal wafers such as silicon substrate are carried out the various processing such as film forming processing, etch processes, oxidation processes, DIFFUSION TREATMENT repeatedly.For example, when the film forming with batch type was treated to example and describes, the multi-disc semiconductor crystal wafer that wafer boat is supported was housed in the container handling of quartz system of lengthwise, was heated the temperature of regulation under vacuum environment, simultaneously film forming gas is imported in the container handling, form film.
Repeatedly carrying out film forming as described above when processing, unwanted film also little by little adheres to the inner surface that is deposited in container handling etc., if this unwanted film peels off, then can produce the particle that causes the reduction of production rate.Therefore, in the prior art, the aggregate-value of the film thickness of wafer film forming is managed etc., thereby before unwanted film generation film is peeled off etc., regularly or aperiodically implement clean etc., come to remove unwanted film before peeling off in that film occurs.
Summary of the invention
The problem that invention will solve
But, in above-mentioned existing clean mode, there is following problem: if it is blocked up to be used for the estimated value of aggregate-value of film thickness of beginning clean, then can be owing to clean is crossed a large amount of particle of slow generation and significantly reduction of productivity ratio generation, perhaps, if the estimated value of the aggregate-value of opposite film thickness is excessively thin, then no matter whether the particle that produces significantly is less than tolerance, the result who carries out clean is, cleaning frequency increases and the disposal ability reduction, has accelerated the loss of container handling.
The present invention is a kind of film rupture checkout gear and film formation device, and it can detect the unwanted film generation film rupture on the inwall that is attached to container handling etc., and in real time identification produces the possibility of particle.
For the scheme of dealing with problems
Thereby the result that the inventor studies heartily to the film rupture of the unwanted film that becomes the reason that produces particle obtains following opinion to have obtained the present invention: find can produce small elastic wave when film rupture occurs, by it is detected, can identify the generation of film rupture.
According to an embodiment of the invention, a kind of film rupture checkout gear is provided, it is arranged at film formation device and carries out film rupture and detect operation, this film formation device has the container handling of accommodating handled object and the surface that film-shaped is formed in above-mentioned handled object, this film rupture checkout gear possesses: the elastic wave detecting unit, it is installed in above-mentioned film formation device, detects elastic wave; And judging unit, it judges whether and need to clean above-mentioned container handling according to the testing result of above-mentioned elastic wave detecting unit.
Like this, the film rupture checkout gear is arranged on has the container handling of accommodating handled object and the film formation device that film-shaped is formed in the surface of handled object, carry out film rupture and detect operation, this film rupture checkout gear possesses: the elastic wave detecting unit, it is installed in film formation device, detects elastic wave; Judging unit, it judges whether and need to clean container handling according to the testing result of elastic wave detecting unit, therefore, can detect the unwanted film generation film rupture on the inwall that is attached to container handling etc., in real time identification produces the possibility of particle.
According to another embodiment of the present invention, a kind of film formation device is provided, in the film forming film formation device to handled object, possess: container handling, it accommodates above-mentioned handled object; Holding unit, it keeps above-mentioned handled object; Heating unit, it heats above-mentioned handled object; The gas feed unit, its supply gas in the above-mentioned container handling; Gas extraction system, it discharges the gas in the above-mentioned container handling; The film rupture checkout gear; And apparatus control portion, its action to film formation device integral body is controlled.
Description of drawings
Fig. 1 is the vertical section structure figure of an example of the expression film formation device that the film rupture checkout gear is installed involved in the present invention.
Fig. 2 is the part amplification sectional view of the installment state of expression film rupture checkout gear.
Fig. 3 is the modular structure figure of the judging unit of expression film rupture checkout gear.
Fig. 4 is the figure of a part of the first variant embodiment of expression film rupture checkout gear of the present invention.
Fig. 5 be expression load with the film rupture of generation between the curve chart of relation.
Fig. 6 is the figure of waveform of the point of expression elasticity intensity of wave maximum.
Fig. 7 is the block diagram of a part of the second variant embodiment of expression film rupture checkout gear of the present invention.
Fig. 8 is the curve chart of analyzing for to the micro rupture of obtaining according to the data that obtain at Fig. 5.
Fig. 9 is the AE original shape ripple of every group of expression and the curve chart of the relation between the frequency distribution.
Figure 10 is the figure of variation of the installment state of expression elastic wave detecting unit.
Figure 11 is the figure of another variation of expression elastic wave detecting unit.
Embodiment
Below, describe with reference to the accompanying drawings an embodiment of film rupture checkout gear involved in the present invention and film formation device in detail.Fig. 1 is the vertical section structure figure of an example of the expression film formation device that the film rupture checkout gear is installed involved in the present invention, Fig. 2 is the part amplification sectional view of the installment state of expression film rupture checkout gear, and Fig. 3 is the modular structure figure of the judging unit of expression film rupture checkout gear.
As shown in the figure, this film formation device 2 has container handling cylindraceous 4 lower ending opening, that the top is arranged.These container handling 4 integral body are formed by for example quartz.This container handling 4 is by being inner core 4A cylindraceous and forming at the interval of its lateral septal regulation, the urceolus 4B that the top is arranged of concentric circles ground configuration.Above-mentioned inner core 4A is supported on the support ring 6 of the inwall that is formed on annularly urceolus 4B bottom.In addition, the bottom of this container handling 4, be the underpart opening of urceolus 4B.Form annularly the flange part 8 of wall thickness in this bottom.For example also can constitute the manifold cylindraceous that peristome in this lower end connects stainless steel.
In the lower ending opening section of above-mentioned container handling 4, liftably freely plug the wafer boat 10 of quartzy system from its below, this wafer boat 10 is as the holding unit of multistage mounting multi-disc as the semiconductor crystal wafer W of handled object.In the situation of present embodiment, the pillar (not shown) of this wafer boat (holding unit) 10 can roughly support for example wafer W of the diameter 300mm about 50 ~ 150 equally spacedly multistagely.
This wafer boat 10 is positioned on the platform 14 via the heat-preservation cylinder 12 of quartz system, and this 14 is supported on the rotating shaft 18 that runs through the cap 16 of stainless steel for example, and this cap 16 is opened the lower ending opening section that closes container handling 4.In addition, for example be embedded with magnetic fluid seal spare 20 in the section of running through of this rotating shaft 18,20 pairs of these rotating shafts 18 of this magnetic fluid seal spare carry out airtight sealing and are rotatably supported by this rotating shaft 18.In addition, wait the containment member 22 that forms in the bottom of the peripheral part of cap 16 and container handling 4 such as being embedded with by the O ring, thus the interior sealing of maintenance container handling 4.
Above-mentioned rotating shaft 18 is installed in the front end of arm 24, and this arm 24 is supported such as the elevating mechanisms such as boat elevator (not shown), can make the integratedly lifting such as wafer boat 10 and cap 16 and in the insert handling container 4 or extract in container handling 4.In addition, also can be fixedly installed above-mentioned cap 16 sides with above-mentioned 14, not make wafer boat 10 carry out rotatably the processing of wafer W.
The sidewall 26 of these container handling 4 bottoms is provided with to the gas feed unit 28 of the needed gases such as container handling 4 interior supply film forming gas.Specifically, above-mentioned gas feed unit 28 has the sidewall 26 that runs through above-mentioned container handling 4 bottoms to the inboard gas nozzle 30 that is formed by quartz ampoule.And, can be from the gas jetting hole 30A gas jet of the front end of this gas nozzle 30.Gas passage 32 is connected on the above-mentioned gas nozzle 30.And 32 are provided with switch valve 32A and the flow controller 32B as mass flow controller in the gas passage, can be when gas be carried out flow control supply gas.
Only put down in writing a gas feed unit 28 among Fig. 1, and the unit that in fact is same structure can be provided with for example employed gaseous species quantity.For example, forming in the situation of silicon nitride film, can use dichlorosilane as silane based gas, as the ammonia of nitriding gas, as the nitrogen of Purge gas etc.
In addition, be formed with exhaust outlet 34 in part corresponding to the gap 27 with between inner core 4A and the urceolus 4B on the sidewall 26 of these container handling 4 bottoms.And this exhaust outlet 34 is connected with the gas extraction system 36 that is provided with not shown pressure-regulating valve, vacuum pump etc., makes it possible to the gases in the container handling 4 are carried out vacuum pumping and are maintained the pressure of regulation.Thereby the gas that imports by gas nozzle 30 flows as follows: rise in inner core 4A and turn back at the top, gap 27 interior declines between inner core 4A and urceolus 4B and from exhaust outlet 34 discharges.
In addition, be provided with the heating unit 38 of tubular in the mode of the periphery of surrounding above-mentioned container handling 4,38 pairs of these container handlings 4 of this heating unit and inner wafer W thereof heat.And this container handling 4 is provided with film rupture checkout gear 40 involved in the present invention.This film rupture checkout gear 40 has: elastic wave detecting unit 42, and it is installed in this film formation device 2, detects elastic wave; And judging unit 44, it judges whether and need to clean above-mentioned container handling 4 according to the testing result of this elastic wave detecting unit 42.And above-mentioned judging unit 44 is connected with for the display part 45 that shows judged result herein.
Specifically, at this, above-mentioned elastic wave detecting unit 42 is installed in the flange part 8 of the bottom of container handling 4.At this, elastic wave refer at material deformation or when chapping material discharge the ripple that when the strain energy of inside, produces of savings.(Acoustic Emission: acoustic emission) transducer 43 is as this elastic wave detecting unit 42 can to use AE.Also as shown in Figure 2, flange part 8 is high temperature herein, and therefore above-mentioned AE transducer 43 engages with flange part 8 via metallic guided wave bar member 46.
Above-mentioned guided wave bar member 46 integral body are formed by metals such as aluminium, stainless steels.Specifically, this guided wave bar member 46 have easy conduction elastic wave, length is about several centimetres barred body 48, its two ends are provided with discoideus mounting panel 50.And this barred body 48 is equipped with a plurality of fin 52 of arranging with predetermined distance, can be cooled to the following temperature of heat resisting temperature of AE transducer 43.
And the composition surface between above-mentioned mounting panel 50 and flange part 8 and the AE transducer 43 is across the driving fit material 54 of easy conduction elastic wave.Metallic plate that can use liquid glass, silicone grease, be made of copper coin, the such soft metal of golden plate etc. is as this driving fit material 54.In addition, in the high situation of the thermal endurance of AE transducer 43, also can not use above-mentioned guided wave bar member 46 and directly this AE transducer 43 is installed in flange part 8.Above-mentioned AE transducer 43 has the frequency band of several kHz ~ tens kHz as the vibration frequency band such as being built-in with the piezoelectric element such as PZT (lead zirconate titanate), for example can use AE144A (Vallen company system) as this AE transducer 43.
This elastic wave detecting unit 42 is connected to above-mentioned judging unit 44 via holding wire 56, thereby can pass on testing result.Above-mentioned holding wire 56 have the intensity filter element 61 that the signal more than the constant intensity is exported as the elastic wave detection signal midway, noise contribution is ended.At this, with the signal below the fixed gain for example the signal below the 40dB end as noise.For example can use high speed AE measuring system AMSY-6 (Vallen-systeme company system) as this intensity filter element 61.
In addition, above-mentioned judging unit 44 has such as being made of computer etc.: count section 58, and it obtains the number of times that detects above-mentioned elastic wave detection signal; And comparing section 60, its output with this count section 58 compares with the fiducial value of being scheduled to.In above-mentioned count section 58, because the tip-shape impulse wave that produces when film rupture occurs is carried from the above-mentioned intensity filter element 61 of prime as elastic wave detection signal S1 and is come, therefore, by the pulse of this tip-shape impulse wave is counted, measure the number of times that film rupture occurs.
In this case, in above-mentioned count section 58, as the first counting form, for example obtain in the last time above-mentioned container handling 4 has been carried out the aggregate-value after the clean.That is, if carry out clean, then remove the unwanted film of the internal face that is attached to container handling 4, therefore, detect the film rupture that after this clean, occurs, its number of times addition that detects is obtained the aggregate-value of accumulative total.And, in this count section 58, to above-mentioned comparing section 60 these aggregate-values of output.Not only in the action of the film forming of film, in the temperature-rise period that is about to carry out the container handling 4 that film forming carries out before processing and in the temperature-fall period of the container handling 4 that carries out after processing of film forming, also carry out this counting action, be that film rupture detects and operates.
In above-mentioned comparing section 60, the threshold value of rule of thumb obtaining is predefined for fiducial value, when this aggregate-value of sending here from prime had reached fiducial value, this comparing section 60 was judged as " need to carry out clean ".In this case, the fiducial value that above-mentioned aggregate-value is used for example is set to about 100, in other words, if detect the film rupture phenomenon 100 times, then is identified as and need to carries out clean.
And, by carried out the control of all actions of this film formation device 2 by the apparatus control portion 70 that consists of such as computer etc., such as the beginning supply gas with stop the setting of supply gas, treatment temperature, the setting of processing pressure, the action control of above-mentioned film rupture checkout gear 40 etc.And, this apparatus control portion 70 has storage mediums 72 such as floppy disk, CD (Compact Disc), hard disk, flash memory or DVD, the program of the control that these storage medium 72 storages stop for supply and supply to above-mentioned various gases, the switch control of high frequency and the embodied on computer readable that the whole action of device is controlled.
Then, the film build method that uses above-mentioned such film formation device that consists of 2 to carry out take the situation that forms silicon nitride film (SiN) as the example explanation.As shown in Figure 1, wafer boat 10 is risen from the below and be loaded in the container handling 4 of predetermined temperature, this wafer boat 10 for example is in the state that mounting has the wafer W of 50 ~ 150 300mm sizes, closes the lower ending opening section of container handling 4 with cap 16, thus, make container interior airtight.
And, be maintained the processing pressure of regulation to vacuumizing in the container handling 4, and increase the supply capability to heating unit 38, make thus temperature and the wafer temperature rising of container handling 4 and keep treatment temperature, alternately supply with off and on respectively for example silane based gas and NH3 gas by gas feed unit 28 (being provided with a plurality of).Thus, form silicon nitride film (SiN) on the surface of the wafer W that supports of wafer boat 10 of rotation.
Then, when the film forming processing finished, this after the supply that has stopped each gas, was reduced to safe temperature with the temperature of container handling 4 and the temperature of wafer W on the contrary, for example about 300 ° of C ~ 400 ° C.Then, if become safe temperature, by being descended to the below of container handling 4, wafer W after the processing unloads, and the wafer W that takes out after processing from container handling 4.At this, in above-mentioned a series of action, film rupture checkout gear 40 involved in the present invention moves and carries out film rupture and detect operation.That is, in the temperature-rise period of the container handling 4 before film forming, in the film forming procedure of film and in the temperature-fall period of the container handling after the film forming 4, carry out film rupture and detect operation.
As mentioned above, in the film forming of film is processed, the not only surface of wafer W, all surface of structure is all piled up the unwanted film of the reason that becomes particle in the containers such as surface of the internal face in container handling 4, gas nozzle 30, and it is put aside along with the increase of the processing sheet number of wafer.And film rupture can occur in this unwanted film when the film thickness that becomes to a certain degree, become the generation reason of particle.When the temperature that makes container handling 4 heats up or lowers the temperature, owing to thermal shock film rupture occurs easily especially.
When above-mentioned unwanted film generation film rupture, produce elastic wave, this elastic wave is transmitted to container handling 4, and the elastic wave detecting unit 42 of tunicle Safety check-up device 40 detects via the guided wave bar member 46 that engages with flange part 8.This elastic wave detecting unit 42 for example is made of the AE transducer 43 that comprises piezoelectric element, and detection signal herein is input to judging unit 44 after having passed through intensity filter element 61 via holding wire 56.Above-mentioned intensity filter element 61 only makes the above signal of constant intensity pass through in order to end noise, is used as elastic wave detection signal S1 output.At this, the above signal of 40dB is passed through, cut-off is less than the signal of 40dB intensity.
In above-mentioned judging unit 44, count section 58 is when having inputted a sharp-pointed tip-shape elastic wave detection signal S1, and counting " 1 " adds up the aggregate-value after the clean, this aggregate-value is sent to the comparing section 60 of rear class.In addition, each when container handling 4 is cleaned all the aggregate-value to above-mentioned count section 58 reset.
And in above-mentioned comparing section 60, the fiducial value of using with predefined aggregate-value for example " 100 " compares, and under the aggregate-value from count section 58 inputs of prime is situation more than the fiducial value, is judged as " need to carry out clean ".Then, its result is presented in the display part 45, causes operator's attention.In addition, said reference value " 100 " only represents an example, is not limited to this.In this case, even be judged as " need to carry out clean ", can not stop immediately warming temperature, film forming processing yet, process but the wafer in pre-treatment is finished film forming.Then, before then carrying out the film forming processing, carry out the clean of container handling 4.As mentioned above, in temperature-rise period, film forming processing procedure, temperature-fall period, detect the film rupture of unwanted film, can identify in real time the possibility that particle produces.
Like this, according to the present invention, carry out film rupture and detect in the film rupture checkout gear of operation being arranged on the film formation device that has the container handling 4 of accommodating handled object, for example semiconductor crystal wafer W and film is formed on the surface of handled object, possess: elastic wave detecting unit 42, it is installed in film formation device, detects elastic wave; Judging unit 44, it judges whether and will clean container handling 4 according to the testing result of elastic wave detecting unit 42, therefore, can detect the film rupture of the unwanted film of the inwall that is attached to container handling 4 etc., identifies in real time the possibility that particle produces.
The variation of＜counting mode 〉
The variation of the counting mode of 58 pairs of film rupture frequencies of count section then, is described.In the first counting mode that has illustrated in front, obtain in the last time and carry out the frequency addition of the film rupture that occurs after the clean and the aggregate-value that obtains, but be not limited to this, also can be carried out as follows.
At first, as the second counting form, also can in count section 58, obtain the aggregate-value in each unit interval of measuring off and on.Specifically, and discontinuously carry out film rupture and detect operation, but the unit interval that every time-out for example just carried out regulation only in one minute for example the film rupture in a second detect and operate, and repeatedly carry out this operation.The number of times that then, will go out by the film rupture detection operation detection in a second carries out addition accumulative total.That is the film rupture that, also can carry out a second within each minute detects operation.
In this case, the threshold value in the comparing section 60 is that fiducial value is the aggregate-value that tempus intercalare is used, and is set to for example 100 little values of the fiducial value used than the aggregate-value of front, for example 10 times.In this case, also can bring into play the action effect identical with the first counting mode of front.
Then, as the 3rd counting mode, count section 58 also can be obtained the number of times that detects the elastic wave detection signal in each unit interval.For example, at this, carry out continuously film rupture and detect operation, the number of times that all the time each unit interval is for example detected film rupture in each second is counted, and exports the count value in each second.In this case, the threshold value in the comparing section 60 is that fiducial value is the count value of using the unit interval, is set to than the fiducial value of above-mentioned the second counting mode 5 less values for example, for example 2 times.In this case, also can bring into play the action effect identical with the first counting mode of front.
Then, as the 4th counting mode, count section 58 is obtained the number of times that detects the elastic wave detection signal in each unit interval, and obtains the increase trend of each number of times that should detect in the unit interval.For example, approaching when need to carry out the period of clean, the generation quantity of film rupture phenomenon sharply increases with the form of conic section, therefore, constitutes and catches this rapid increase.Specifically, for example carry out continuously film rupture and detect operation, the number of times that all the time each unit interval is for example detected film rupture in per 60 seconds is counted, and obtains the count value in these per 60 seconds.And then, this count value and the count value in previous 60 seconds are compared, obtain and export its increment rate.For example, if the count value in previous 60 seconds is 5 times, the count value in this 60 seconds is 10 times, and then increment rate is 200%, exports this value.
Threshold value in the comparing section 60 is that fiducial value is the fiducial value that increment rate is used, and for example is set to " 200% ".That is, if the increment rate that film rupture occurs is more than 200%, then to be judged as " need to carry out clean ".At this, 60 seconds above-mentioned unit interval, fiducial value 200% only represent an example, are not limited to this.In this case, also can bring into play the action effect identical with the first counting mode of front.
The＜the first variant embodiment 〉
The first variant embodiment of film rupture checkout gear of the present invention then, is described.Among the embodiment in front, between elastic wave detecting unit 42 and judging unit 44, be provided with intensity filter element 61 in order to end noise, but in order to end more reliably noise, the first frequency filter unit that dwindles frequency band can be set also.Fig. 4 is the figure of a part of the first variant embodiment of this film rupture checkout gear of the present invention of expression.For the structure division identical with the structure division of Fig. 1 ~ shown in Figure 3, additional identical Reference numeral, and the description thereof will be omitted.
As shown in Figure 4, at this, on the holding wire 56 between intensity filter element 61 and the judging unit 44, be provided with the first frequency filter unit 74 that the signal that makes the allocated frequency band from the signal of above-mentioned intensity filter element 61 outputs passes through.Can use band pass filter as this first frequency filter unit 74.Use following device as this band pass filter, namely cut-off frequency signal and the frequency ratio 400kHz large signal less than 200kHz for example only makes the signal of the frequency band of 200kHz ~ 400kHz pass through.As described later, in the elastic wave that produces being accompanied by the film rupture generation, comprise sharp-pointed tip-shape signal in the special frequency band about 300kHz, therefore, by it is detected, can further improve accuracy of detection.
The confirmatory experiment that＜film rupture occurs 〉
Then, therefore the actual confirmatory experiment that has carried out the film rupture generation illustrates its evaluation result.At this, as experiment material, having prepared external diameter is that 15mm, internal diameter are that 12mm, length are two quartz ampoules of 1400mm, and the inner surface of a quartz ampoule and outer surface integral body are smeared the silicon nitride film (SiN film) of adequate thickness (3 μ m) therein.Another root quartz ampoule is not smeared any film and directly use.
Fix under the state at the two ends of these quartz ampoules in flatly supporting, little by little apply load at central portion to vertical direction, detect the elastic wave that produce this moment by the AE transducer.Fig. 5 be expression load with the film rupture of generation between the curve chart of relation, (A) expression of Fig. 5 is applied to the load of quartz ampoule and the generation quantity of film rupture (Hits: the relation hits), transverse axis is the time, the right longitudinal axis is load, and the left longitudinal axis is the generation quantity (Hits) of film rupture.In (B) of Fig. 5, transverse axis is the time, and the longitudinal axis is the intensity (Amp) of signal.At this, by the following signal of filter (corresponding with the intensity filter element 61 of Fig. 1) cut-off 400dB, prevent the intrusion of noise.
At first, during about 260 seconds, constantly to increase until the mode of 0.05kN applies load to two quartz ampoules from 0kN.Do not smearing in the situation without the quartz ampoule of film of silicon nitride film, until quartz ampoule is disrumpent feelings, for the generation of film rupture, hits all are " nothing ", " 0 ".
Relative therewith, in the situation of the quartz ampoule that film is arranged of having smeared silicon nitride film, shown in Fig. 5 (A), for about 0.01kN film rupture has occured from load, and along with film rupture occurs discretely in the increase of loading.For the generation quantity of film rupture, be the part place of 40sec, 85sec, 100sec, 140sec at transverse axis, count down to respectively and be 4 film rupture generation quantity to the maximum.
In (B) of Fig. 5, the elasticity intensity of wave (dB) when expressing film rupture generation among (A) that detects Fig. 5 and counting, the each point in the curve chart represents to occur film rupture.According to this curve chart, judge in transverse axis elasticity intensity of wave when 90sec (0.015kN) maximum.According to these curve charts, can be interpreted as the generation that can come capture film to break by detecting elastic wave.
Then, the waveform of the elastic wave of the some A of the intensity maximum of the signal of (B) Elastic Wave of extraction Fig. 5 is analyzed.Fig. 6 illustrates its result.Fig. 6 is the figure of waveform of the point of expression elasticity intensity of wave maximum, and Fig. 6 (A) illustrates amplitude, and (B) of Fig. 6 illustrates that signal to (A) of Fig. 6 carries out Fourier transform and the frequency distribution obtained.Shown in Fig. 6 (A), for detected elastic wave, be judged as the large tip-shape signal of very sharp-pointed amplitude and illustrate with the width of a few μ sec, afterwards, the weak waveform of amplitude is continuously about 700 μ sec.
Then, when the frequency of waveform is at this moment analyzed, showing sharp-pointed peak value waveform near the 100kHz and near the 300kHz.Although these two peak value waveforms are diagram not, the detection signal of other elastic waves manifests similarly this two peak value waveforms.Thereby, can be interpreted as that in order to prevent more reliably sneaking into of noise the peak value waveform about the low 100kHz of preferred cut-off frequency detects the peak value waveform about the high 300kHz of frequency.Therefore, in first variant embodiment shown in Figure 4, the first frequency filter unit 74 that uses the signal in the scope that only makes 200kHz ~ 400kHz to pass through detects the peak value waveform centered by 300kHz in front.
The＜the second variant embodiment 〉
The second variant embodiment of film rupture checkout gear of the present invention then, is described.Among the embodiment in front, constitute and have count section 58 and comparing section 60 as judging unit 44, but also can replace them with the second frequency the filter unit whether output of judging intensity filter element 61 has a signal of assigned frequency band.Fig. 7 is the block diagram of a part of the second variant embodiment of this film rupture checkout gear of the present invention of expression.In Fig. 7, for the additional identical Reference numeral of the structure division identical with the structure division of Fig. 1 ~ shown in Figure 6, and the description thereof will be omitted.
At this, has second frequency filter unit 80 that the signal that only makes assigned frequency band passes through as judging unit 44.For example can use 70kHz ~ 80kHz frequency band signal by and the band pass filter of signal of cut-off frequency in addition as this second frequency filter unit 80.The signal of the frequency band of this 70kHz ~ 80kHz is the elastic wave that produces when on the surface of the container handling 4 of quartz system, quartz ampoule small be full of cracks occuring as described later, known when producing this small be full of cracks the unwanted film of its surface sediment also film rupture must occur, therefore, when small be full of cracks has occured at this quartz surfaces in estimation, the film ruptures of films can occur in a large number, are judged as " need to carry out clean ".
This second variant embodiment also can be replaced Fig. 1 ~ embodiment illustrated in fig. 6, perhaps can also make holding wire 56 branch and using side by side midway.
At this, the elastic wave signal that above-mentioned small when be full of cracks occurs is analyzed, therefore, its analysis result is described.Fig. 8 is the curve chart of analyzing for the small be full of cracks that the data that obtain according to Fig. 5 are obtained, (A) of Fig. 8 is the curve chart of expression peak swing (Amp) and the relation between the waveform duration (Dur), (B) of Fig. 8 is the curve chart of the relation between expression peak swing (Amp) and the gravity frequency (F), and (C) of Fig. 8 is the curve chart of the relation between expression peak swing (Amp) and the crest frequency (F).At this, the waveform duration refers to that the envelope of AE waveform (elastic wave) keeps the above time of setting.In addition, gravity frequency refers to the position of centre of gravity of the integrated value of the function that obtains by frequency analysis, by following formula.Gravity frequency (kHz)=∑ Ei * Fi/ ∑ Ei, at this, Ei is the size of frequency content, Fi is frequency.
When the correlation shown in (A) that confirm Fig. 8 and Fig. 8 (B), can confirm shown in Fig. 8 (C), to be divided into like that four groups of A ~ D.Specifically, as shown in Figure 6 size, waveform duration, the frequency of amplitude being analyzed, is the elastic wave grouping with each detected AE original shape ripple.Fig. 9 is the AE original shape ripple of each group of expression and the curve chart of the relation between the frequency distribution, (A) expression A group of Fig. 9, (B) expression B group of Fig. 9, (C) expression C group of Fig. 9, (D) expression D group of Fig. 9.The transverse axis of the figure of left-hand line is the time, and the longitudinal axis is amplitude.The transverse axis of the figure of right-hand column is the frequency when having carried out Fourier transform, and the longitudinal axis is size.
When the waveform of the AE original shape ripple (elastic wave) that belongs to these groups was observed, the feature that confirms waveform as shown in Figure 9 was different.The difference of these waveforms can be thought by the mechanism difference of AE original shape ripple caused, judges according to occurrence frequency and time, can be divided into four groups of following A ~ D.
A group: the generation of the small be full of cracks of SiN film and progress.
B group: the generation of the small be full of cracks of quartz glass and progress.
C group: unknown phenomenon.
D group: unknown phenomenon.
At this, the elastic wave that belongs to the B group that confirms among (C) of Fig. 8 makes quartz surfaces produce small be full of cracks, and confirms because of this be full of cracks and brought out the film rupture generation.Thereby, judge by detection belong to the frequency band of B group, namely such as the elastic wave of the frequency band of the 70kHz ~ 80kHz illustrated in fig. 7, can detect the small be full of cracks of quartz surfaces generation and the generation of the film rupture thereupon brought out.
In addition, in above embodiment, the situation that is installed in flange part 8 take elastic wave detecting unit 42 via guided wave bar member 46 is illustrated as example, but the variation of the installment state of elastic wave detecting unit that also can be is as shown in figure 10 installed like that.In Figure 10, to the additional identical Reference numeral of the structure division identical with structure division shown in Figure 2.At this, elastic wave detecting unit 42 is housed in the transducer containing case 84 of an end opening, this peristome side is fixed on the surface of flange part 8 by screw 86.In this transducer containing case 84, also contain together spring member 88, with above-mentioned elastic wave detecting unit 42 from its rear side to flange part 8 sides press, thereby make the top of elastic wave detecting unit 42 be close to the surface of flange part 8.In this case, also can be close to face across connecting airtight material 54.
In addition, other variation of elastic wave detecting unit as shown in figure 11 are such, also can cooling body 90 be set at this elastic wave detecting unit 42, and this elastic wave detecting unit 42 is cooled off.In Figure 11, to the additional identical Reference numeral of the structure division identical with structure division shown in Figure 2.This cooling body 90 has the cooling shell 92 on every side that is designed to around elastic wave detecting unit 42.And this cooling shell 92 is provided with refrigerant inlet 92A and refrigerant outlet 92B, makes coolant flow into cooling shell 92 interior coolings.Can by like this elastic wave detecting unit 42 being cooled off, prevent owing to heat is destroyed elastic wave detecting unit 42.At this, can use the cooling liquids such as refrigerating gas, cooling water such as nitrogen to be used as coolant.
In addition, this elastic wave detecting unit 42 can be installed in the arbitrary portion of container handling 4, further, in the situation of the bottom that manifold is arranged on this container handling 4, also can be installed on this manifold.In addition, in the present embodiment, be illustrated as an example of the situation of silicon nitride film being carried out film forming as film example, but be not limited to this, in the situation that forms which kind of film, can both use the present invention.Further, be illustrated as an example of the film formation device of batch type example at this, but be not limited to this, the present invention also can be applied to the film formation device of so-called vane type that semiconductor crystal wafer is processed one by one.
In addition, at this so that semiconductor crystal wafer is illustrated as example as handled object, but this semiconductor die fenestra comprises the compound semiconductor substrate such as silicon substrate, GaAs, SiC, GaN, further, be not limited to these substrates, can also apply the present invention to the employed glass substrate of liquid crystal indicator, ceramic substrate etc.
According to film rupture checkout gear and film formation device involved in the present invention, can bring into play following such good action effect.
The film rupture checkout gear is arranged on has the container handling of accommodating handled object and the film formation device that film is formed on the surface of handled object, carry out film rupture and detect operation, this film rupture checkout gear possesses: the elastic wave detecting unit, and it is installed in film formation device, detects elastic wave; And judging unit, it judges whether and need to clean container handling according to the testing result of elastic wave detecting unit, therefore, can detect the film rupture of the unwanted film of the inwall that is attached to container handling etc., identifies in real time the possibility that particle produces.
Claims (17)
1. film rupture checkout gear, it is arranged at film formation device and carries out film rupture and detect operation, and this film formation device has the container handling of accommodating handled object and film-shaped is formed in the surface of above-mentioned handled object, and this film rupture checkout gear has:
The elastic wave detecting unit, it is installed in above-mentioned film formation device, detects elastic wave; And
Judging unit, it judges whether and need to clean above-mentioned container handling according to the testing result of above-mentioned elastic wave detecting unit.
2. film rupture checkout gear according to claim 1 is characterized in that,
Also have the intensity filter element, this intensity filter element will be exported as the elastic wave detection signal by the signal more than the constant intensity in the signal of above-mentioned elastic wave detecting unit output.
3. film rupture checkout gear according to claim 2 is characterized in that,
Also have the first frequency filter unit, this first frequency filter unit passes through the signal of the allocated frequency band in the signal of above-mentioned intensity filter element output.
4. film rupture checkout gear according to claim 2 is characterized in that,
Above-mentioned judging unit has:
Count section, it obtains the number of times that detects above-mentioned elastic wave detection signal; And
Comparing section, its output and predefined fiducial value with above-mentioned count section compares.
5. film rupture checkout gear according to claim 4 is characterized in that,
Above-mentioned count section is obtained the last aggregate-value that above-mentioned container handling is carried out detecting after the clean number of times of above-mentioned elastic wave detection signal.
6. film rupture checkout gear according to claim 4 is characterized in that,
Above-mentioned count section is obtained the aggregate-value that detects the number of times of above-mentioned elastic wave detection signal in each unit interval that measures off and on.
7. film rupture checkout gear according to claim 4 is characterized in that,
Above-mentioned count section is obtained the number of times that detects above-mentioned elastic wave detection signal in each unit interval.
8. film rupture checkout gear according to claim 4 is characterized in that,
Above-mentioned count section is obtained the number of times that detects above-mentioned elastic wave detection signal in each unit interval, and obtains the increase trend of the number of times that detects in each unit interval.
9. film rupture checkout gear according to claim 2 is characterized in that,
Above-mentioned judging unit has the second frequency filter unit, and this second frequency filter unit judges whether the output of above-mentioned intensity filter element has the signal of assigned frequency band.
10. film rupture checkout gear according to claim 1 is characterized in that,
In the film forming procedure of temperature-rise period, temperature-fall period and the said film of above-mentioned container handling, carry out above-mentioned film rupture and detect operation.
11. film rupture checkout gear according to claim 1 is characterized in that,
Also have display part, this display part shows the judged result of above-mentioned judging unit.
12. film rupture checkout gear according to claim 1 is characterized in that,
Above-mentioned elastic wave detecting unit is provided with the cooling body that cools off for to above-mentioned elastic wave detecting unit.
13. a film formation device forms film to handled object, this film formation device possesses:
Container handling, it accommodates above-mentioned handled object;
Holding unit, it keeps above-mentioned handled object;
Heating unit, it heats above-mentioned handled object;
The gas feed unit, its supply gas in the above-mentioned container handling;
Gas extraction system, it discharges the gas in the above-mentioned container handling;
Film rupture checkout gear according to claim 1; And
Apparatus control portion, its action to film formation device integral body is controlled.
14. film formation device according to claim 13 is characterized in that,
Above-mentioned film rupture checkout gear is installed in above-mentioned container handling.
15. film formation device according to claim 13 is characterized in that,
Above-mentioned film rupture checkout gear is installed in the manifold of the bottom that is arranged on above-mentioned container handling.
16. film formation device according to claim 14 is characterized in that,
By metallic guided wave bar member above-mentioned film rupture checkout gear is installed.
17. film formation device according to claim 16 is characterized in that,
Above-mentioned guided wave bar member is provided with fin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-177991 | 2011-08-16 | ||
| JP2011177991A JP5741315B2 (en) | 2011-08-16 | 2011-08-16 | Film crack detection apparatus and film formation apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102956522A true CN102956522A (en) | 2013-03-06 |
Family
ID=47711722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102935654A Pending CN102956522A (en) | 2011-08-16 | 2012-08-16 | Film crack detection apparatus and film forming apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130042808A1 (en) |
| JP (1) | JP5741315B2 (en) |
| KR (1) | KR101575391B1 (en) |
| CN (1) | CN102956522A (en) |
| TW (1) | TW201327678A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900562A (en) * | 2014-03-07 | 2015-09-09 | 株式会社东芝 | Semiconductor manufacturing device and semiconductor manufacturing method |
| CN108695200A (en) * | 2017-03-30 | 2018-10-23 | 东京毅力科创株式会社 | Vertical heat processing apparatus |
| CN114062919A (en) * | 2021-11-18 | 2022-02-18 | 广东电网有限责任公司广州供电局 | Method, device and system for monitoring breakage of vacuum arc-extinguishing chamber and readable storage medium |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140108968A (en) * | 2013-03-04 | 2014-09-15 | (주)온테스트 | Apparatus for crack detection of contact unit of electronic device and system for performance test system having thesame |
| WO2014158410A1 (en) * | 2013-03-13 | 2014-10-02 | Applied Materials, Inc | Acoustically-monitored semiconductor substrate processing systems and methods |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2013041993A (en) | 2013-02-28 |
| JP5741315B2 (en) | 2015-07-01 |
| KR101575391B1 (en) | 2015-12-07 |
| KR20130019349A (en) | 2013-02-26 |
| TW201327678A (en) | 2013-07-01 |
| US20130042808A1 (en) | 2013-02-21 |
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Application publication date: 20130306 |