CN102956425A - Method for quickly finding out largest beam value - Google Patents
Method for quickly finding out largest beam value Download PDFInfo
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- CN102956425A CN102956425A CN2011102411334A CN201110241133A CN102956425A CN 102956425 A CN102956425 A CN 102956425A CN 2011102411334 A CN2011102411334 A CN 2011102411334A CN 201110241133 A CN201110241133 A CN 201110241133A CN 102956425 A CN102956425 A CN 102956425A
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Abstract
The invention discloses a method for quickly finding out a largest beam value. The method is characterized by including caching three values input by a memory power supply and beam values corresponding to the three values to be three sets of analysis data in process of changing a power supply input value and finding out the largest beam value, and performing trend judgment to the three sets of data to find out the largest beam value. The method relates to an ion implanter and belongs to the field of semi-conductor manufacturing. A beam value and a power supply setting value are in quadratic curve relation (1) macroscopically, and the beam value is the largest when the power supply is set to a certain value. The power supply setting values in certain relation and the corresponding beam values are cached by the method to be the three sets of analysis data. Three conditions may occur to the three sets of analysis data, uptrend (2), quadratic curve trend, and downtrend (4). The largest beam value is found out by analyzing the three sets of trends.
Description
Technical field
The present invention relates to ion implantor and seek the peaked method of line.The method by the input of buffer memory memory power supply three values and corresponding line value as three group analysis data, and these three groups of data are carried out trend judge, seek the line maximum.
Background technology
The semiconductor integrated circuit manufacturing process has developed into 12 inches wafers, nm technology node period.Along with the wafer size is increasing, the unit component size is more and more less, and is also just more and more higher to the performance requirement of semiconductor manufacturing equipment.Ion implantor is requisite key equipment in the semiconductor device manufacturing process.In order to improve the performance of ion implantor, make its development of satisfying the requirement of modern large wafer, nano-device production technology and adapting to the semiconductor process techniques in future, must develop efficient full-automatic control system.
In the ion implantor, many power supplys are arranged, comprise high-voltage power supply, current source etc.The control quality of these power supplys has directly affected the stability of educt beaming flow.
Seeking the maximum of line by change power settings value, is to obtain by scanning one section line value in the interval.Set point for power supply limits like this, and the common time is also long.
Summary of the invention
The present invention mainly is for more accurate, searches out fast the maximum of line.
Concrete steps are as follows:
＜1〉according to different electrical power, obtain power supply individual character Configuration Values, comprise trend difference DV, power supply changes step value SV (5).
＜2〉obtain three groups of initial data.Power settings value and line value are as first group of data (ax at this moment, ay) (6), then calculate new power settings value (bx=ax+SV) and be set power supply (7), after power supply is stable, with power settings value and line value as second group of data (bx, by) (8), calculate again new power settings value (cx=bx+SV) and be set power supply (9), after power supply is stable, with power settings value and line value as the 3rd group of data (cx, cy) (10).
＜3〉trend of three groups of data of judgement.Receive three groups of data values (11), the second beam combination flow valuve deducted the first beam combination flow valuve obtain difference D21, D21 and trend difference DV make comparisons (12):
If D21 is greater than DV (13), then the 3rd beam combination flow valuve is deducted the second beam combination flow valuve and obtain difference D32, D32 and trend difference DV make comparisons (15): if D32 is less than DV (17), (3) described conic section trend (21) have then been obtained to be similar to this moment, next power settings value: SetPoint=ax+ (cx-ax) * 0.68 in the time of just can obtaining to get the line maximum, finish, withdraw from (25); If D32 greater than DV (18), has then obtained to be similar to (2) described ascendant trend (22) this moment.
If D21 is less than DV (14), the 3rd beam combination flow valuve deducts the second beam combination flow valuve and obtains difference D32, D32 and trend difference DV make comparisons (16): if D32 less than DV (19), has then obtained to be similar to (4) described downward trend (23); If DD32 is greater than DV (20), then the trend judgement makes mistakes, and withdraws from (24).
＜4〉according to the trend that obtains new data more, recurrence is carried out and is sought the line maximum.Calculate new set point according to the trend that obtains, if ascendant trend then with first group of rejection of data, moves forward rear two groups of data, that is: ax=bx, ay=by, bx=cx, by=cy.Cx=bx+SV, setting newly is worth and obtains new line value cy. if downward trend, then with the 3rd group of rejection of data, will move after front two groups of data simultaneously, that is: cx=bx, cy=by, bx=ax, by=ay.ax=bx-SV sets and newly to be worth and to obtain new line value ay (26), three groups of data that then will newly obtain pass to trend evaluation algorithm (11), carry out the judgement of next round.
The present invention has following remarkable advantage:
1. the sweep limits for power supply is unrestricted.
2. quicker.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail, but not as the restriction to patent of the present invention.
As shown in Figure 2, we want the set point of scanning focused power supply to obtain maximum line value.At first obtain the individual character Configuration Values of power supply focusing power supply, trend difference 0.002mA for example, power supply changes step value 0.5kV.
Then obtain three groups of initial data.Focusing power supply set point and line value are as first group of data at this moment, (10kV for example, 1.500mA) (6), then calculate new power settings value (bx=10kV+0.5Kv=10.5kV) and be set focusing power supply (7), after focusing power supply is stable, with set point and line value as second group of data, (10.5kV for example, 1.510mA) (8), calculate again new power settings value (cx=10.5kV+0.5kV=11kV) and be set power supply (9), after power supply is stable, with power settings value and line value as the 3rd group of data, for example (11kV, 1.511) (10).
Next judge the trend of these three groups of data.The second beam combination flow valuve is deducted the first beam combination flow valuve obtains difference D21=0.010mA, D21 and trend difference DV (0.002mA) make comparisons (12):
The D21 (0.010mA) of this moment is greater than DV (0.002mA) (13), then just the 3rd beam combination flow valuve deducts the second beam combination flow valuve and obtains difference D32=1.511mA-1.510mA=0.001mA, D32 (0.001mA) and trend difference DV (0.002mA) make comparisons (15): the D32 (0.001mA) of this moment is less than DV (0.002mA) (17), consider the factors such as error and line fluctuation, we think that the ascendant trend of the 3rd group of data is to be false, then we have obtained to be similar to (3) described conic section trend (21), next power settings value: SetPoint=10kV+ (11kV-10kV) * 0.68=10.68kV in the time of just can obtaining to get the line maximum, finish, withdraw from (25).If what obtain is other trend, repeatedly carry out after then changing set point, until obtain conic section trend.
Description of drawings
Fig. 1 is the data trend key diagram.
Fig. 2 is flow process control key diagram
Specific embodiment of the present invention elaborates content of the present invention.For persons skilled in the art, any apparent change of without departing from the premise in the spirit of the present invention it being done all consists of the infringement to patent of the present invention, will bear corresponding legal liabilities.
Claims (5)
1. the peaked method of fast searching line is characterized in that: the line value of meeting three groups of power settings values of buffer memory and correspondence is as analyzing data.
2. the peaked method of fast searching line is characterized in that: three groups of data can be divided into three kinds of trend: ascendant trend (2), and conic section trend (3), downward trend (4), other trend report an error.
3. the peaked method of fast searching line is characterized in that: when judging data trend, three groups of data difference and a definite value can be compared, bring impact in order to reduce the shake of data acquisition error and line.
4. the peaked method of fast searching line is characterized in that: constantly update three groups of data by the method for recursive call, thereby obtain new trend, obtain at last target data.
5. the peaked method of fast searching line is characterized in that: when obtaining at last the power settings value, adopted the method for golden section to obtain.
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| CN2011102411334A CN102956425A (en) | 2011-08-22 | 2011-08-22 | Method for quickly finding out largest beam value |
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| CN2011102411334A CN102956425A (en) | 2011-08-22 | 2011-08-22 | Method for quickly finding out largest beam value |
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| CN102956425A true CN102956425A (en) | 2013-03-06 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866461A (en) * | 2006-04-07 | 2006-11-22 | 北京中科信电子装备有限公司 | Ion beam transmission control optimizing method |
| CN101076875A (en) * | 2004-10-07 | 2007-11-21 | 瓦里安半导体设备公司 | Ion beam implantation current, point width and position regulation |
| CN101458720A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing proximity effect of SRAM trap |
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- 2011-08-22 CN CN2011102411334A patent/CN102956425A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076875A (en) * | 2004-10-07 | 2007-11-21 | 瓦里安半导体设备公司 | Ion beam implantation current, point width and position regulation |
| CN1866461A (en) * | 2006-04-07 | 2006-11-22 | 北京中科信电子装备有限公司 | Ion beam transmission control optimizing method |
| CN101458720A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing proximity effect of SRAM trap |
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Application publication date: 20130306 |