CN102947483B - Heat treatment method having a heating step, a treatment step, and a cooling step - Google Patents
Heat treatment method having a heating step, a treatment step, and a cooling step Download PDFInfo
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- CN102947483B CN102947483B CN201180029125.1A CN201180029125A CN102947483B CN 102947483 B CN102947483 B CN 102947483B CN 201180029125 A CN201180029125 A CN 201180029125A CN 102947483 B CN102947483 B CN 102947483B
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- treatment chamber
- pedestal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Abstract
The invention relates to a method for treating, in particular coating, workpieces, in particular semiconductor substrates (19), in a process chamber (4) of a reactor housing (1, 2, 3), said chamber forming a process chamber floor (9) comprising a susceptor (5) for receiving the workpieces and that can be heated by a heating device (15) and a process chamber ceiling (10) that can be cooled by a cooling device (23), wherein the process chamber height (H), defined by the distance between the process chamber ceiling (10) and the process chamber floor (9), is variable, wherein the susceptor is heated from a loading/unloading temperature at which the workpieces are loaded/unloaded into or out of the susceptor (5) to a process temperature in a heating step, the workpieces are heat-treated at the process temperature in a treatment step subsequent to the heating step, and the susceptor is subsequently cooled down to the loading/unloading temperature in a cooling step. In order to reduce cycle times, the process chamber height (H) takes on a minimum value during the cooling step.
Description
The present invention relates to a kind for the treatment of process, especially in the treatment chamber of reactor shell to workpiece, especially semiconductor substrate, carry out the method for plating, described process chamber configurations becomes to have can by heating devices heat and the chamber bottom had for the pedestal of accommodating workpiece and the treatment chamber top that can be cooled by the cooling device, wherein, the treatment chamber height defined by the spacing for the treatment of chamber top and chamber bottom is variable, wherein, in heating steps, charging/discharge temp when pedestal is loaded and unloaded described workpiece from described treatment chamber is heated to treatment temp, in treatment step afterwards, at processing temperatures described workpiece is heat-treated, subsequently in cooling step, pedestal is cooled to charging/discharge temp.
By DE 102 17 806A1 a kind of known MOCVD method that utilizes, semiconductor layer is deposited device on a semiconductor substrate.This device has reactor shell, is provided with admission gear and pedestal in reactor shell.It is treatment chamber between admission gear bottom surface and base top surface.Process gas can enter treatment chamber via the opening on treatment chamber top.Pedestal is placed with the substrate treating plating.For realizing plating, reactant gases or different reactant gases compositions are especially treating the substrate surface generation pyrolysis of plating.Reaction product, i.e. III and V main group element, form coating at substrate surface, this layer is the epitaxy layer in mono-crystalline substrate.Pedestal is heated from below by heating unit.Pedestal can be moved in the vertical direction, to change treatment chamber height.
The technical problem to be solved in the present invention shortens the deposition manufacture process cycle.
What above-mentioned technical problem was provided by claims is solved according to technical scheme of the present invention.
Be starkly lower than treatment temp, but under the charging/discharge temp of 100 DEG C can be more than or equal to, when opening reactor shell lid, at treatment chamber mounting substrate.Subsequently, off-response device housing and rinse treatment chamber with rinsing gas.In heating steps, pedestal is heated above the treatment temp of charging/discharge temp hundreds of degrees Celsius.In treatment step, gas will be processed and send into treatment chamber, to implement thermal treatment.After treatment step terminates, in enforcement cooling step process, treatment chamber and pedestal are cooled to charging/discharge temp.After reaching this temperature, can reactor shell be opened, to take out treated substrate, and be replaced by pending substrate.According to the present invention, make to reach ultimate range between pedestal and the treatment chamber top cooled in the heating phase, thus shorten treatment cycle.Thus, from being reduced to minimum by the pedestal that heats to the heat dissipation capacity at the treatment chamber top cooled.Particularly preferably being, in heat-processed, by forming the admission gear at treatment chamber top, sending into a kind of rinsing gas of low heat conductivity, such as nitrogen.By treatment chamber altitude mixture control to the optimum value being suitable for respective handling, to implement treatment step.Described process can be to workpiece, especially the pure thermal treatment of substrate.But preferably, when implementing this treatment step, by the process gas be made up of one or more composition, treatment chamber sent into by the inlet mouth via admission gear, and in treatment chamber, this process gas is at substrate surface generation chemical reaction, thus forms semiconductor layer at this.For this reason, described process gas is preferably containing the metal organic composition of III main group metal and the hydride of V main group element.Treatment chamber height gets minimum value in cooling process process.Particularly preferably be at this, such as, with the rinsing gas of high thermal conductivity, hydrogen, rinse treatment chamber height.This measure makes to reach at utmost from pedestal to be cooled to the heat radiation at the treatment chamber top cooled.In particularly preferred embodiments, under low pressure MOCVD process is carried out in inner treatment chamber.Preferably with infrared heating device or the radio frequency heating apparatus pedestal from below heated graphite.In order to change treatment chamber height, move in the vertical direction the device of pedestal and heating base preferably by topworks.Described topworks can be positioned at reactor shell inside, and is preferably made up of main shaft driving device.Described pedestal can rotate around the axle being placed in reactor shell center.Treatment chamber top is preferably made up of the face of giving vent to anger of admission gear, and has multiple cooling channel passed for refrigerant.
The invention particularly relates to a kind of method depositing at least one deck in the treatment chamber of reactor shell at least one of the substrates, described treatment chamber have formed described chamber bottom can by heating devices heat for the treatment chamber top of settling the pedestal of at least one substrate and can be cooled by the cooling device, wherein, the spacing for the treatment of chamber top and chamber bottom defines treatment chamber height, this treatment chamber height can change between minimum value and the maximum value being different from this minimum value, and this method comprises following steps:
-described pedestal is adjusted to charging/discharge temp;
-under charging/discharge temp, for described pedestal loads at least one substrate;
-described pedestal is heated above the treatment temp of charging/discharge temp from charging/discharge temp, during this period, treatment chamber height gets its maximum value;
-at processing temperatures, process gas is sent into described treatment chamber and makes it decompose, thus deposit at least one deck at least one substrate described, during this period, treatment chamber height is between its maxima and minima;
-described pedestal is cooled to charging/discharge temp from treatment temp, during this period, treatment chamber height gets its minimum value, and described treatment chamber top is cooled;
-under charging/discharge temp, be treatment chamber discharging.
Sectional view according to the reactor shell shown in Fig. 1 is described embodiments of the invention.
Reactor shell by the bottom of reactor shell lid 1, reactor shell 3 and reactor enclosure body wall 2 formed.Reactor enclosure body wall 2 can be in a tubular form.Enclosure interior is found time by available unshowned vacuum unit, or makes chamber pressure keep below barometric point level.
Admission gear 7 is fixed in case lid 1, provides rinsing gas or process gas by inlet pipe 21 to this admission gear.The ducted body that admission gear 7 is made up of stainless steel formed, and hereinto in empty body, is provided with baffle plate 20 before the outlet of inlet pipe 21.The bottom surface of admission gear 7 forms plate of giving vent to anger, and this plate of giving vent to anger has multiple air outlet 8 arranged in sieve-like.Give vent to anger plate outside surface downward form treatment chamber top 10.Be provided with between air outlet 8 and can supply liquid coolant, such as water, the cooling channel 23 passed, to cool treatment chamber top 10.
The top surface being parallel being arranged on the pedestal 5 below admission gear 7 extends in the plate of giving vent to anger of admission gear 7, and forms chamber bottom 9.It is treatment chamber 4 between admission gear 7 and pedestal 5.The diameter of discoidal pedestal 5 can be greater than 30cm.
Pedestal 5 supported by the pillar 22 be positioned on the central shaft 6 for the treatment of chamber 4.Pillar 22 can be driven in rotation, so that pedestal 5 rotates around axis 6 in plating process.
Be provided with supporting plate 17 below pedestal 5, this supporting plate can be made up of quartz, and be loaded with there is multiple air outlet 18 go out compression ring 16, this goes out compression ring and is then connected with not shown vacuum unit.
Be provided with heating coil 15 below pedestal 5 and supporting plate 17, and this heating coil can produce radio-frequency field, this radio-frequency field responds to generation current vortex in the pedestal 5 of graphite-made, pedestal 5 can be heated to treatment temp thus.
Be provided with multiple topworks 11, its have spindle gearing 13, can by the main shaft 12 of spindle gearing 13 rotary actuation and the spindle nut 14 be placed on supporting plate 17.By topworks 11, the vertical position of pedestal 5, supporting plate 17 and heating unit 15 can be changed.
Therefore, by topworks 11, treatment chamber height H can be made to change between a minimum and a maximum value.Height H can change between 4mm and 50mm.Under normal circumstances, the diameter of pedestal is at least 30cm and is 650cm to the maximum.
Utilize said apparatus can implement following treatment process:
Under the charging/discharge temp between room temperature and 200 DEG C to 300 DEG C, opening reactor shell, such as, realizing by starting reactor shell lid 1.Because admission gear 7 is fixed on reactor shell lid 1, so pedestal 5 can be touched when opening reactor shell lid 1, so as on pedestal 5 mounting substrate 19.Substrate 19 until plating is placed into after on pedestal 5, closing process room housing again.With rinsing gas, such as nitrogen, rinses treatment chamber 4.With topworks 11, pedestal 5 is adjusted to extreme lower position together with heating unit 15, now, treatment chamber height H is maximum value, such as at least 7cm.On this position, be down to minimum from pedestal to the heat conduction amount at treatment chamber top 10 cooled, pedestal 5 be heated above 600 DEG C or treatment temp higher than 1000 DEG C.
By process gas is sent into admission gear 7 via inlet pipe 21, and enter treatment chamber 4 via air outlet 8 exhaust, start growth process thus, wherein semiconductor layer is deposited on substrate 19.
After growth step terminates, with rinsing gas, now can be hydrogen, rinse treatment chamber 4.With topworks 11, pedestal 5 is vertically upwards adjusted to extreme higher position, now, treatment chamber height H is minimum value.This minimum value such as can be 2cm to the maximum.When disconnecting heating unit 15 and with coolant cools treatment chamber top 10, pedestal 5 temperature declines, wherein because rinsing gas heat conductivility is good and reach minor increment between pedestal and treatment chamber top, make to reach at utmost to the heat radiation at the treatment chamber top 10 cooled from pedestal 5.
After reaching charging/discharge temp, nitrogen is sent into treatment chamber and opens reactor shell lid 1, to change substrate.
All disclosed features () own have invention meaning or invention to be worth.In the open file of the application, in the disclosure of affiliated/attached priority text (earlier application file) is also entirely included, also the feature in this priority text is included in claims of the application for this reason.Those selectable designs arranged side by side in dependent claims are all Curve guide impeller prior art being had to independent invention meaning or value, especially can propose divisional application based on these dependent claims.
Reference numerals list
1 reactor shell lid
2 reactor enclosure body walls
At the bottom of 3 reactor shell
4 treatment chambers
5 pedestals
6 axis
7 admission gears
8 air outlets
9 chamber bottom
10 treatment chamber tops
11 topworkies
12 main shafts
13 spindle gearings
14 spindle nuts
15 heating units
16 give vent to anger element
17 supporting plates
18 air outlets
19 substrates
20 baffle plates
21 inlet pipe
22 pillars
23 cooling channels
H treatment chamber height
Claims (13)
1. one kind in reactor shell (1, 2, 3) in treatment chamber (4), workpiece is carried out to the treatment process of plating, described treatment chamber (4) is configured with and can is heated by heating unit (15) and have for the treatment chamber top (10) of settling the chamber bottom of the pedestal of described workpiece (5) (9) and can be cooled by the cooling device, wherein, the treatment chamber height (H) defined by described treatment chamber top (10) and the spacing of described chamber bottom (9) is variable, wherein, in heating steps, charging/discharge temp when described pedestal (5) is loaded and unloaded described workpiece from described treatment chamber is heated to treatment temp, in treatment step afterwards, at processing temperatures described workpiece is heat-treated, subsequently in cooling step, pedestal is cooled to charging/discharge temp, it is characterized in that, in described heating steps, make treatment chamber height (H) get its maximum value, make to minimize from the hot-fluid at the treatment chamber top (10) be extremely cooled by the pedestal (5) heated, and in described cooling step, make described height get its minimum value, make from the pedestal that will cool (5) to the maximization of the hot-fluid at cooled treatment chamber top, wherein, the heat flowing to described treatment chamber top (10) is fallen apart by described refrigerating unit.
2. the method for claim 1, is characterized in that, described workpiece is semiconductor substrate (19).
3. the method for claim 1, it is characterized in that, in described treatment step, by forming the admission gear (7) of described treatment chamber top (10), process gas is sent into described treatment chamber (4), described process gas is positioned on the described substrate (19) on described pedestal (5) at least one and forms coating by chemical reaction or condensation.
4. method as claimed in claim 3, is characterized in that in described heating steps, will having the rinsing gas of low heat conductivity, and be sent in described treatment chamber (4) by described admission gear (7).
5. method as claimed in claim 3, is characterized in that, in described cooling step, will having the process gas of high thermal conductivity, and be sent in described treatment chamber (4) by described admission gear (7).
6. the method for claim 1, is characterized in that, described treatment step is MOCVD (MOCVD) process.
7. the method for claim 1, is characterized in that, under lower than the chamber pressure of 1000mbar, implement described treatment step.
8. the method for claim 1, is characterized in that, carries out temperature adjustment by radio frequency heating apparatus (15) or infrared heating device to the described pedestal (5) that graphite is made.
9. the method for claim 1, is characterized in that, cools described treatment chamber top by the liquid coolant flowing through cooling channel (23).
10. the method for claim 1, it is characterized in that, in order to change treatment chamber height (H), topworks (11) makes described pedestal (5) together with described heating unit (15) vertically relative to described reactor shell (1,2,3) be subjected to displacement.
11. the method for claim 1, is characterized in that, described in there is at least 30cm diameter the minimum spacing of discoidal pedestal (5) and described treatment chamber top be no more than 2cm, and be not less than 7cm with the maximum spacing at described treatment chamber top.
12. 1 kinds in reactor shell (1, 2, 3) at least one substrate (19), deposit the method for at least one deck in treatment chamber (4), this treatment chamber have formed described chamber bottom (9) can by heating unit (15) heat for the treatment chamber top (10) of settling the pedestal of at least one substrate (19) (5) and can be cooled by the cooling device, wherein, described treatment chamber top (10) defines treatment chamber height (H) with the spacing of described chamber bottom (9), this treatment chamber height can change between minimum value and the maximum value being different from this minimum value, this method comprises following steps:
-described pedestal (5) is adjusted to charging/discharge temp;
-under charging/discharge temp, for described pedestal (5) loads described at least one substrate (19);
-described pedestal (5) is heated above the treatment temp of charging/discharge temp from charging/discharge temp, during this period, treatment chamber height (H) gets its maximum value;
-at processing temperatures, process gas sent into described treatment chamber (4) and make it decompose, thus at least one deck is deposited on described at least one substrate (19), during this period, treatment chamber height (H) is between its maxima and minima;
-described pedestal (5) is cooled to charging/discharge temp from treatment temp, during this period, treatment chamber height (H) gets its minimum value, and described treatment chamber top (10) is cooled;
-under charging/discharge temp, be treatment chamber (4) discharging.
13. methods as claimed in claim 12, is characterized in that, when heating described pedestal and process workpiece, cool described treatment chamber top (10).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010016477A DE102010016477A1 (en) | 2010-04-16 | 2010-04-16 | A thermal treatment method comprising a heating step, a treatment step and a cooling step |
| DE102010016477.1 | 2010-04-16 | ||
| PCT/EP2011/055505 WO2011128260A1 (en) | 2010-04-16 | 2011-04-08 | Heat treatment method having a heating step, a treatment step, and a cooling step |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102947483A CN102947483A (en) | 2013-02-27 |
| CN102947483B true CN102947483B (en) | 2015-06-03 |
Family
ID=44041665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180029125.1A Active CN102947483B (en) | 2010-04-16 | 2011-04-08 | Heat treatment method having a heating step, a treatment step, and a cooling step |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR101832980B1 (en) |
| CN (1) | CN102947483B (en) |
| DE (1) | DE102010016477A1 (en) |
| TW (1) | TWI496938B (en) |
| WO (1) | WO2011128260A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10597779B2 (en) * | 2015-06-05 | 2020-03-24 | Applied Materials, Inc. | Susceptor position and rational apparatus and methods of use |
| DE102017105333A1 (en) * | 2017-03-14 | 2018-09-20 | Aixtron Se | Method and device for thermal treatment of a substrate |
| KR20210106610A (en) | 2020-02-20 | 2021-08-31 | 대진대학교 산학협력단 | High speed heating and cooling plate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6709523B1 (en) * | 1999-11-18 | 2004-03-23 | Tokyo Electron Limited | Silylation treatment unit and method |
| TWI275660B (en) * | 2002-04-22 | 2007-03-11 | Aixtron Ag | Method and device for depositing thin layers on a substrate in a height-adjustable process chamber |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2529484C3 (en) * | 1975-07-02 | 1982-03-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method and apparatus for epitaxially depositing silicon on a substrate |
| US6289842B1 (en) * | 1998-06-22 | 2001-09-18 | Structured Materials Industries Inc. | Plasma enhanced chemical vapor deposition system |
| US6610968B1 (en) * | 2000-09-27 | 2003-08-26 | Axcelis Technologies | System and method for controlling movement of a workpiece in a thermal processing system |
| JP4765169B2 (en) * | 2001-01-22 | 2011-09-07 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
| KR100536797B1 (en) * | 2002-12-17 | 2005-12-14 | 동부아남반도체 주식회사 | Chemical vapor deposition apparatus |
| DE102005056323A1 (en) * | 2005-11-25 | 2007-05-31 | Aixtron Ag | Device for simultaneously depositing layers on a number of substrates comprises process chambers arranged in a modular manner in a reactor housing |
| DE102006018515A1 (en) * | 2006-04-21 | 2007-10-25 | Aixtron Ag | CVD reactor with lowerable process chamber ceiling |
| US20100199914A1 (en) * | 2007-10-10 | 2010-08-12 | Michael Iza | Chemical vapor deposition reactor chamber |
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2010
- 2010-04-16 DE DE102010016477A patent/DE102010016477A1/en active Pending
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2011
- 2011-04-08 KR KR1020127029969A patent/KR101832980B1/en active IP Right Grant
- 2011-04-08 WO PCT/EP2011/055505 patent/WO2011128260A1/en active Application Filing
- 2011-04-08 CN CN201180029125.1A patent/CN102947483B/en active Active
- 2011-04-13 TW TW100112762A patent/TWI496938B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6709523B1 (en) * | 1999-11-18 | 2004-03-23 | Tokyo Electron Limited | Silylation treatment unit and method |
| TWI275660B (en) * | 2002-04-22 | 2007-03-11 | Aixtron Ag | Method and device for depositing thin layers on a substrate in a height-adjustable process chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201200627A (en) | 2012-01-01 |
| KR20130027018A (en) | 2013-03-14 |
| TWI496938B (en) | 2015-08-21 |
| CN102947483A (en) | 2013-02-27 |
| KR101832980B1 (en) | 2018-02-28 |
| WO2011128260A1 (en) | 2011-10-20 |
| DE102010016477A1 (en) | 2011-10-20 |
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