CN102947483A - Heat treatment method having a heating step, a treatment step, and a cooling step - Google Patents
Heat treatment method having a heating step, a treatment step, and a cooling step Download PDFInfo
- Publication number
- CN102947483A CN102947483A CN2011800291251A CN201180029125A CN102947483A CN 102947483 A CN102947483 A CN 102947483A CN 2011800291251 A CN2011800291251 A CN 2011800291251A CN 201180029125 A CN201180029125 A CN 201180029125A CN 102947483 A CN102947483 A CN 102947483A
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- Prior art keywords
- treatment chamber
- pedestal
- treatment
- temp
- heating
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Abstract
The invention relates to a method for treating, in particular coating, workpieces, in particular semiconductor substrates (19), in a process chamber (4) of a reactor housing (1, 2, 3), said chamber forming a process chamber floor (9) comprising a susceptor (5) for receiving the workpieces and that can be heated by a heating device (15) and a process chamber ceiling (10) that can be cooled by a cooling device (23), wherein the process chamber height (H), defined by the distance between the process chamber ceiling (10) and the process chamber floor (9), is variable, wherein the susceptor is heated from a loading/unloading temperature at which the workpieces are loaded/unloaded into or out of the susceptor (5) to a process temperature in a heating step, the workpieces are heat-treated at the process temperature in a treatment step subsequent to the heating step, and the susceptor is subsequently cooled down to the loading/unloading temperature in a cooling step. In order to reduce cycle times, the process chamber height (H) takes on a minimum value during the cooling step.
Description
The present invention relates to a kind for the treatment of process, especially in the treatment chamber of reactor shell to workpiece, especially semiconductor substrate, carry out the method for plating, described process chamber configurations becomes to have and can be heated by heating unit and have for the chamber bottom of the pedestal of accommodating workpiece and the treatment chamber top of the device cooling that can be cooled, wherein, the treatment chamber height that is defined by the spacing for the treatment of chamber top and chamber bottom is variable, wherein, in heating steps, charging/discharge temp when pedestal is loaded and unloaded described workpiece from described treatment chamber is heated to treatment temp, after treatment step in, under treatment temp, described workpiece is heat-treated, in cooling step, pedestal is cooled to charging/discharge temp subsequently.
By the known a kind of MOCVD of the utilization method of DE 102 17 806A1 semiconductor layer is deposited on device on the semiconductor substrate.This device has reactor shell, is provided with admission gear and pedestal in reactor shell.It is treatment chamber between admission gear bottom surface and the base top surface.Process gas and can enter treatment chamber via the opening on the treatment chamber top.Be placed with the substrate for the treatment of plating on the pedestal.For realizing plating, reactant gases or different reactant gases compositions are especially being treated the substrate surface generation pyrolysis of plating.Reaction product, namely III and V main group element form coating at substrate surface, and this layer is the crystal epitaxy layer on the mono-crystalline substrate.Pedestal is heated from the below by heating unit.Can move in the vertical direction pedestal, to change the treatment chamber height.
The technical problem to be solved in the present invention is to shorten the deposition manufacture process cycle.
Above-mentioned technical problem is by being solved according to technical scheme of the present invention that claims provide.
Be starkly lower than treatment temp, however can be more than or equal under charging/discharge temp of 100 ℃, when opening the reactor shell lid, at the treatment chamber mounting substrate.Subsequently, off-response device housing and wash treatment chamber with rinsing gas.In heating steps, pedestal is heated above the treatment temp of hundreds of degrees centigrade of charging/discharge temp.In treatment step, will process gas and send into treatment chamber, in order to implement thermal treatment.After treatment step finishes, in implementing the cooling step process, treatment chamber and pedestal are cooled to charging/discharge temp.After reaching this temperature, can open reactor shell, in order to take out treated substrate, and be replaced by pending substrate.According to the present invention, the heating phase make pedestal and the treatment chamber top of having cooled off between reach ultimate range, thereby shorten treatment cycle.Thus, the heat dissipation capacity from heated pedestal to the treatment chamber top of having cooled off is reduced to minimum.Particularly preferably be, in heat-processed, by consisting of the admission gear at treatment chamber top, send into a kind of rinsing gas of low heat conductivity, for example nitrogen.With the treatment chamber altitude mixture control to the optimum value that is suitable for respective handling, in order to implement treatment step.Described processing can be to workpiece, especially the pure thermal treatment of substrate.When implementing this treatment step, the processing gas that will be made of one or more composition is sent into treatment chamber via the inlet mouth of admission gear, should process gas at substrate surface generation chemical reaction in treatment chamber, thereby form semiconductor layer at this yet preferably.For this reason, described processing gas preferably contains the metal organic composition of III main group metal and the hydride of V main group element.The treatment chamber height is got minimum value in the cooling process process.Particularly preferably be at this, with the rinsing gas of high thermal conductivity, for example hydrogen washes the treatment chamber height.This measure so that the heat radiation from pedestal to be cooled to the treatment chamber top of having cooled off reach at utmost.In particularly preferred embodiments, under low pressure carry out the MOCVD process in inner treatment chamber.Preferably heat the pedestal of graphite-made from the below with infrared heating device or radio frequency heating apparatus.In order to change the treatment chamber height, preferably move in the vertical direction the device of pedestal and heating base by topworks.Described topworks can be positioned at reactor shell inside, and preferably is made of main shaft driving device.Described pedestal can rotate around the axle that is placed in the reactor shell center.The treatment chamber top preferably is made of the face of giving vent to anger of admission gear, and has a plurality of cooling channels that supply refrigerant to pass.
The invention particularly relates to and a kind ofly in the treatment chamber of reactor shell, deposit at least method of one deck at least one substrate, described treatment chamber has the treatment chamber top that is used for settling the pedestal of at least one substrate and the device that can be cooled cooling that can be heated by heating unit that forms described chamber bottom, wherein, the spacing for the treatment of chamber top and chamber bottom defines the treatment chamber height, this treatment chamber height can and be different between the maximum value of this minimum value in minimum value and changes, and this method comprises following steps:
-described pedestal is adjusted to charging/discharge temp;
-under charging/discharge temp, for described pedestal loads at least one substrate;
-described pedestal is heated above the treatment temp of charging/discharge temp from charging/discharge temp, during this period, the treatment chamber height is got its maximum value;
-under treatment temp, will process gas and send into described treatment chamber and it is decomposed, thereby deposit at least one deck at described at least one substrate, during this period, the treatment chamber height is between its maximum value and the minimum value;
-described pedestal is cooled to charging/discharge temp from treatment temp, during this period, the treatment chamber height is got its minimum value, and described treatment chamber top is cooled;
-under charging/discharge temp, be the treatment chamber discharging.
Sectional view according to reactor shell shown in Figure 1 describes embodiments of the invention.
Reactor shell by reactor shell lid 1, reactor shell at the bottom of 3 and reactor enclosure body wall 2 consisted of.Reactor enclosure body wall 2 can be in a tubular form.Available unshowned vacuum unit is found time enclosure interior, perhaps makes chamber pressure keep below the barometric point level.
Admission gear 7 is fixed on the case lid 1, rinsing gas is provided or processes gas to this admission gear by inlet pipe 21.The ducted body that admission gear 7 is made by stainless steel is consisted of, and in the empty body, the outlet front of inlet pipe 21 is provided with baffle plate 20 hereinto.The bottom surface of admission gear 7 consists of the plate of giving vent to anger, and this plate of giving vent to anger has a plurality of air outlets 8 that the sieve shape is arranged that are.That gives vent to anger plate consists for the treatment of chamber top 10 towards the outside surface of below.Be provided with between the air outlet 8 and can supply liquid refrigerant, water for example, the cooling channel 23 of passing is in order to cool off treatment chamber top 10.
The end face that is arranged on the pedestal 5 of admission gear 7 belows is parallel to the plate extension of giving vent to anger of admission gear 7, and consists of chamber bottom 9.Be treatment chamber 4 between admission gear 7 and the pedestal 5.The diameter of discoidal pedestal 5 can be greater than 30cm.
Pedestal 5 is supported by the pillar 22 on the central shaft 6 that is positioned at treatment chamber 4.Pillar 22 can be driven in rotation, so that pedestal 5 rotates around axis 6 in the plating process.
Pedestal 5 belows are provided with supporting plate 17, and this supporting plate can be made of quartz, and be loaded with have a plurality of air outlets 18 go out compression ring 16, this goes out compression ring and then is connected with the vacuum unit of icon not.
Pedestal 5 and supporting plate 17 belows are provided with heating coil 15, and this heating coil can produce radio-frequency field, and this radio-frequency field is responded to the generation current vortex in the pedestal 5 of graphite-made, pedestal 5 can be heated to treatment temp thus.
Be provided with a plurality of topworkies 11, it has spindle gearing 13, can and be placed in spindle nut 14 on the supporting plate 17 by the main shaft 12 of spindle gearing 13 rotary actuations.By topworks 11, can change the vertical position of pedestal 5, supporting plate 17 and heating unit 15.
Therefore, by topworks 11, the treatment chamber height H is changed between minimum value and maximum value.Height H can change between 4mm and 50mm.Generally, the diameter of pedestal is at least 30cm and is 650cm to the maximum.
Utilize said apparatus can implement following treatment process:
Under the charging/discharge temp between room temperature and 200 ℃ to 300 ℃, open reactor shell, for example, realize by starting reactor shell lid 1.Because admission gear 7 is fixed on the reactor shell lid 1, thus when opening reactor shell and cover 1, can touch pedestal 5 so that on pedestal 5 mounting substrate 19.After being placed into the substrate 19 until plating on the pedestal 5, again close the treatment chamber housing.Use rinsing gas, for example nitrogen washes treatment chamber 4.With topworks 11 pedestal 5 is adjusted to extreme lower position together with heating unit 15, at this moment, the treatment chamber height H is maximum value, for example 7cm at least.On this position, be down to minimumly from pedestal to the heat conduction amount at the treatment chamber top 10 of having cooled off, pedestal 5 is heated above 600 ℃ or be higher than 1000 ℃ treatment temp.
Send into admission gear 7 by processing gas via inlet pipe 21, and enter treatment chamber 4 via air outlet 8 exhausts, begin thus growth process, wherein semiconductor layer is deposited on the substrate 19.
Growth step is used rinsing gas after finishing, and can be hydrogen this moment, flushing treatment chamber 4.With topworks 11 pedestal 5 vertically upwards is adjusted to the extreme higher position, at this moment, the treatment chamber height H is minimum value.This minimum value for example can be 2cm to the maximum.When disconnecting heating unit 15 and use coolant cools treatment chamber top 10, pedestal 5 drop in temperatures, wherein because the rinsing gas heat conductivility well and between pedestal and the treatment chamber top reaches minor increment, so that the heat radiation to the treatment chamber top 10 of having cooled off reaches at utmost from pedestal 5.
After reaching charging/discharge temp, nitrogen is sent into treatment chamber and open reactor shell lid 1, in order to change substrate.
All disclosed features () own have invention meaning or invention to be worth.In the application's open file, the disclosure of affiliated/attached priority text (formerly application documents) is also included fully, also the feature in this priority text is included in claims of the application for this reason.The selectable design arranged side by side of in the dependent claims those all is the improvement design that independent invention meaning or value are arranged for prior art, especially can propose to divide an application for the basis by these dependent claims.
Reference numerals list
1 reactor shell lid
2 reactor enclosure body walls
At the bottom of 3 reactor shell
4 treatment chambers
5 pedestals
6 axis
7 admission gears
8 air outlets
9 chamber bottom
10 treatment chamber tops
11 topworkies
12 main shafts
13 spindle gearings
14 spindle nuts
15 heating units
16 elements of giving vent to anger
17 supporting plates
18 air outlets
19 substrates
20 baffle plates
21 inlet pipe
22 pillars
23 cooling channels
H treatment chamber height
Claims (12)
1. treatment process, especially in reactor shell (1,2,3) treatment chamber (4) is interior to workpiece, especially semiconductor substrate (19) carries out the method for plating, described treatment chamber (4) is constructed with the treatment chamber top (10) that can be heated by heating unit (15) and have be used to the chamber bottom (9) of the pedestal of settling described workpiece (5) and the device (23) that can be cooled cooling, wherein, the treatment chamber height (H) that is defined by the spacing of described treatment chamber top (10) and described chamber bottom (9) is variable, wherein, in heating steps, charging/discharge temp when described pedestal (5) is loaded and unloaded described workpiece from described treatment chamber is heated to treatment temp, after treatment step in, under treatment temp, described workpiece is heat-treated, subsequently in cooling step, pedestal is cooled to charging/discharge temp, it is characterized in that, in described heating steps, make treatment chamber height (H) get its maximum value, so that the hot-fluid from heated pedestal (5) to the treatment chamber top (10) that is cooled minimizes, and in described cooling step, make described height get its minimum value, so that the maximization of the hot-fluid from the pedestal (5) that will cool off to the treatment chamber top that is cooled, wherein, the heat that flows to described treatment chamber top (10) is fallen apart by described refrigerating unit (23).
2. the method for claim 1, it is characterized in that, in described treatment step, by consisting of the admission gear (7) at described treatment chamber top (10), to process gas and send into described treatment chamber (4), described processing gas forms coating at the described substrate (19) that at least one is positioned on the described pedestal (5) by chemical reaction or condensation.
3. such as each described method of aforementioned claim, it is characterized in that in described heating steps, will having the rinsing gas of low heat conductivity, for example nitrogen is sent in the described treatment chamber (4) by described admission gear (7).
4. such as each described method of aforementioned claim, it is characterized in that in described cooling step, will having the processing gas of high thermal conductivity, for example hydrogen is sent in the described treatment chamber (4) by described admission gear (7).
5. such as each described method of aforementioned claim, it is characterized in that, described treatment step is organometallics chemical vapour deposition (MOCVD) process.
6. such as each described method of aforementioned claim, it is characterized in that, be lower than the described treatment step of enforcement under the chamber pressure of 1000mbar.
7. as each described method of aforementioned claim, it is characterized in that, the described pedestal (5) of graphite being made by radio frequency heating apparatus (15) or infrared heating device carries out temperature adjustment.
8. as each described method of aforementioned claim, it is characterized in that, cool off described treatment chamber top by the liquid coolant of the described cooling channel (23) of flowing through.
9. as each described method of aforementioned claim, it is characterized in that, in order to change treatment chamber height (H), topworks (11) make described pedestal (5) together with described heating unit (15) vertically with respect to described reactor shell (1,2,3) be subjected to displacement.
10. as each described method of aforementioned claim, it is characterized in that, described discoidal pedestal (5) with 30cm diameter at least is no more than 2cm with the minimum spacing at described treatment chamber top, and is not less than 7cm with the maximum spacing at described treatment chamber top.
11. one kind in reactor shell (1,2,3) deposit at least method of one deck at least one substrate (19) in the treatment chamber (4), this treatment chamber have form described chamber bottom (9) can be by the treatment chamber top (10) that is used for settling the pedestal (5) of at least one substrate (19) and the device (23) that can be cooled cooling of heating unit (15) heating, wherein, described treatment chamber top (10) defines treatment chamber height (H) with the spacing of described chamber bottom (9), this treatment chamber height can and be different between the maximum value of this minimum value in minimum value and changes, and this method comprises following steps:
-described pedestal (5) is adjusted to charging/discharge temp;
-under charging/discharge temp, for described pedestal (5) loads described at least one substrate (19);
-described pedestal (5) is heated above the treatment temp of charging/discharge temp from charging/discharge temp, during this period, treatment chamber height (H) is got its maximum value;
-under treatment temp, to process gas sends into described treatment chamber (4) and it is decomposed, thereby deposit at least one deck at described at least one substrate (19), during this period, treatment chamber height (H) is between its maximum value and the minimum value;
-described pedestal (5) is cooled to charging/discharge temp from treatment temp, during this period, treatment chamber height (H) is got its minimum value, and described treatment chamber top (10) is cooled;
-under charging/discharge temp, be treatment chamber (4) discharging.
12. method as claimed in claim 11 is characterized in that, when heating described pedestal and processing described workpiece, cools off described treatment chamber top (10).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010016477.1 | 2010-04-16 | ||
| DE102010016477A DE102010016477A1 (en) | 2010-04-16 | 2010-04-16 | A thermal treatment method comprising a heating step, a treatment step and a cooling step |
| PCT/EP2011/055505 WO2011128260A1 (en) | 2010-04-16 | 2011-04-08 | Heat treatment method having a heating step, a treatment step, and a cooling step |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102947483A true CN102947483A (en) | 2013-02-27 |
| CN102947483B CN102947483B (en) | 2015-06-03 |
Family
ID=44041665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180029125.1A Active CN102947483B (en) | 2010-04-16 | 2011-04-08 | Heat treatment method having a heating step, a treatment step, and a cooling step |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR101832980B1 (en) |
| CN (1) | CN102947483B (en) |
| DE (1) | DE102010016477A1 (en) |
| TW (1) | TWI496938B (en) |
| WO (1) | WO2011128260A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018518056A (en) * | 2015-06-05 | 2018-07-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Susceptor positioning and rotating device and method of use |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017105333A1 (en) * | 2017-03-14 | 2018-09-20 | Aixtron Se | Method and device for thermal treatment of a substrate |
| KR20210106610A (en) | 2020-02-20 | 2021-08-31 | 대진대학교 산학협력단 | High speed heating and cooling plate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6709523B1 (en) * | 1999-11-18 | 2004-03-23 | Tokyo Electron Limited | Silylation treatment unit and method |
| US20040123806A1 (en) * | 2002-12-17 | 2004-07-01 | Anam Semiconductor Inc. | Chemical vapor deposition apparatus and method |
| TWI275660B (en) * | 2002-04-22 | 2007-03-11 | Aixtron Ag | Method and device for depositing thin layers on a substrate in a height-adjustable process chamber |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2529484C3 (en) * | 1975-07-02 | 1982-03-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method and apparatus for epitaxially depositing silicon on a substrate |
| US6289842B1 (en) * | 1998-06-22 | 2001-09-18 | Structured Materials Industries Inc. | Plasma enhanced chemical vapor deposition system |
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- 2011-04-08 KR KR1020127029969A patent/KR101832980B1/en active IP Right Grant
- 2011-04-08 WO PCT/EP2011/055505 patent/WO2011128260A1/en active Application Filing
- 2011-04-13 TW TW100112762A patent/TWI496938B/en active
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| JP2018518056A (en) * | 2015-06-05 | 2018-07-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Susceptor positioning and rotating device and method of use |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201200627A (en) | 2012-01-01 |
| WO2011128260A1 (en) | 2011-10-20 |
| KR20130027018A (en) | 2013-03-14 |
| KR101832980B1 (en) | 2018-02-28 |
| CN102947483B (en) | 2015-06-03 |
| TWI496938B (en) | 2015-08-21 |
| DE102010016477A1 (en) | 2011-10-20 |
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