CN102945901B - High-power nitride LED structure and fabrication method of structure - Google Patents
High-power nitride LED structure and fabrication method of structure Download PDFInfo
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- CN102945901B CN102945901B CN201210421881.5A CN201210421881A CN102945901B CN 102945901 B CN102945901 B CN 102945901B CN 201210421881 A CN201210421881 A CN 201210421881A CN 102945901 B CN102945901 B CN 102945901B
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Abstract
The invention discloses a high-power nitride LED (light-emitting diode) structure. A buffer layer, a first undoped GaN layer, an n-shape layer, an active layer, a p-shaped layer, a second undoped GaN layer and a transparent conducting layer grow on one face of a substrate; a p electrode and an n electrode are arranged on the face of the substrate; the second undoped GaN layer grows between the p-shaped layer and the transparent conducting layer and is provided with a coarse surface structure; the thickness of the second undoped GaN layer is 20-100nm; the p electrode is fabricated on the transparent conducting layer; an epitaxial structure is etched till the buffer layer is exposed or almost exposed; and the n electrode is fabricated on the buffer layer or the first undoped GaN layer. The fabrication method is characterized in that the second undoped GaN layer grows on the p-shaped layer; the transparent conducting layer grows on the second undoped GaN layer; and then the p electrode and the n electrode are fabricated. The high-power nitride LED structure can form a capacitive structure; the lighting efficiency is improved; the impact of an piezoelectric effect can be reduced; the current congestion is improved; the radiated heat of an LED device is reduced; and the competitive capacity of a product is improved.
Description
Technical field
Patent of the present invention relates to field of semiconductor manufacture, is specifically related to a kind of high power nitride LED structure and manufacture method thereof.
Background technology
Light-emitting diode (LED) is a kind of electroluminescent semiconductor device of structural type that can convert the electrical signal to light signal.Gallium nitride (GaN) based light-emitting diode once the revolution again occurring that the mankind are thrown light in history after just the advantage such as little is described as relay lamp with its high efficiency, long-life, energy-conserving and environment-protective, volume, becomes the focus that international semiconductor and lighting field research and development are paid close attention to industry as solid state light emitter.There is continuously adjustable direct bandwidth for 0.7 ~ 6.2eV based on III ~ V group nitride material of gallium nitride (GaN), InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) and indium nitride gallium aluminium (AlGaInN), they cover the spectral region from ultraviolet light to infrared light, are the ideal materials manufacturing blue light, green glow and white light emitting device.
The GaN base nitride LED structure (see Fig. 1) of existing routine is one side epitaxial growth buffer 102, layer of undoped gan 103, n-layer 104, active layer 105, p-type layer 106, transparency conducting layer 107 in Sapphire Substrate 101; P-electrode 108 is set at the upper surface of transparency conducting layer 107 and at the upper surface of resilient coating 102, n-electrode 109(is set see Fig. 2).Described p-electrode 108 and n-electrode 109 are positioned at the same side of Sapphire Substrate 101.The electric current of light emitting semiconductor device operating room flows through p-type layer 106 from p-electrode 108, active layer 105, n-layer 104 arrive n-electrode 109(see Fig. 2).But because the activation efficiency of Mg in p-type layer 106 is lower and piezoelectric effect impact, the luminous efficiency of device is always not high.Meanwhile, because n-electrode 109 is generally produced on above n-layer 104, cause blocking up seriously at corner location electric current, thus occur comparatively serious heating problem, this not only affects the useful life of device, and the light decay of device also can be made more serious.
Because Sapphire Substrate is insulating material, the electric charge produced because of factors such as friction, induction, conduction is difficult to from the release of substrate direction, when charge accumulated will produce Electro-static Driven Comb phenomenon (ElectriStatic Discharge is called for short ESD) to a certain extent.So be that the GaN base LED chip of substrate belongs to electrostatic sensitivity device with sapphire, its antistatic effect is poor.Some enterprise or research institution introduce comparatively complicated device making method to improve the antistatic effect of GaN base device now, have certain effect.But, introduce for solving antistatic problem the manufacturing cost that complicated manufacture method can improve device separately.So, still should study and introduce new structure to resist Electro-static Driven Comb phenomenon (ESD) to the damage of device in epitaxial process.
Summary of the invention
The object of the invention is to solve the problem, a kind of high power nitride LED structure containing capacitance type structure is provided, by forming capacitance structure in LED, improve device carriers mobility and bright dipping light path on the one hand, increase Carrier recombination probability, the light extraction efficiency improving device reduces the impact of piezoelectric effect simultaneously; On the other hand between transparency conducting layer and p-type layer, add the second layer of undoped gan and play cushioning effect, improve electric current jam, reduce heating, thus extend device useful life, reduce light decay; Again on the one hand, the protective effect due to capacitance type structure can improve the antistatic effect of device.Second object of the present invention provides the manufacture method of described high power nitride LED structure.
For achieving the above object, the technical scheme taked of the present invention is as follows.
A kind of high power nitride LED structure, resilient coating, the first layer of undoped gan, n-layer, active layer, p-type layer, transparency conducting layer, p-electrode and n-electrode is comprised in the one side of substrate, it is characterized in that, between p-type layer and transparency conducting layer, accompany one deck second layer of undoped gan, described transparency conducting layer makes p-electrode; Epitaxial structure is etched to and exposes resilient coating or close to exposing resilient coating, on described resilient coating or in close the first layer of undoped gan exposing resilient coating, make n-electrode; Described p-type layer is for mixing Mg GaN structure sheaf, and its thickness is 50 ~ 300nm.
Optionally, described p-type layer or the structure of fixing for doping content or the structure for doping content gradual change.
Further, described second layer of undoped gan is thick 20 ~ 500nm, has the structure sheaf of roughened surface.
Further, described roughened surface comprises irregular matsurface and the graphical face of specification.
Further, described specification figure comprises circle, bar shaped, square, rectangle or hexagon.
Further, described n-electrode is directly (directly contacting) or virtual connection (indirect contact) with described resilient coating, and described virtual connection is: described n-electrode is connected with described resilient coating by very thin (degree is " close to exposing ") first layer of undoped gan.
For realizing above-mentioned second object, the technical scheme that the present invention takes is as follows.
A manufacture method for high power nitride LED structure, adopt metal organic chemical compound vapor deposition method (MOCVD) growth, it is characterized in that, its growth step comprises:
(1) select corresponding method to clean substrate according to substrate nature, then substrate is placed in epitaxial furnace;
(2) furnace temperature is adjusted to 530 ~ 560 DEG C, at the low temperature nitride gallium resilient coating of Grown 20 ~ 35nm thickness;
(3) furnace temperature is risen to 1050 ~ 1150 DEG C, grow the first layer of undoped gan of 1 ~ 2.3um thickness on the buffer layer;
(4) furnace temperature is adjusted to 950 ~ 1250 DEG C, growth thickness is the n-layer of 1 ~ 2.5um;
(5) furnace temperature is down to 750 ~ 860 DEG C, n-layer grows the multiple quantum well active layer of the InGaN/GaN in 5 ~ 15 cycles;
(6) furnace temperature is risen to 930 ~ 1100 DEG C again, active layer grows the p-type layer of 50 ~ 300nm thickness;
(7) furnace temperature is adjusted to 1050 ~ 1150 DEG C, in p-type layer, growth thickness is second layer of undoped gan of 20 ~ 500nm;
(8) transparency conducting layer, p-electrode and n-electrode is made according to chip technology.
Further, the p-type layer preferred concentration gradual change type structure described in step (6).
Further, the second layer of undoped gan described in step (7) has roughened surface, and described roughened surface comprises irregular matsurface and the graphical face of specification, and the chip technology that described roughened surface adopts adjustment epitaxy technique parameter, photoetching adds etching makes.
Further, described specification figure comprises circle, bar shaped, square, rectangle or hexagon.
Good effect of the present invention is: (1) by inserting the second layer of undoped gan in epitaxial structure, capacitance type structure can be formed, improve the mobility in carrier mobility especially hole, improve the combined efficiency in active area electronics and hole, the impact of piezoelectric effect can be reduced simultaneously, improve the anlistatig ability of device.
(2) the second layer of undoped gan inserting roughening in epitaxial structure can change bright dipping light path, increases the probability that light radiation goes out device, improves the light extraction efficiency of device.
(3) introduce the second layer of undoped gan simultaneously virtual connection n-electrode can improve the CURRENT DISTRIBUTION of device, reduce heating, thus extend device useful life, reduce light decay.
Accompanying drawing explanation
Fig. 1 is the epitaxial structure schematic diagram of existing nitride LED structure;
Fig. 2 is the structural representation of existing nitride LED structure Electrode connection.
Label in figure is respectively:
101, substrate; 102, resilient coating; 103, layer of undoped gan; 104, n-layer; 105, active layer;
106, p-type layer; 107, transparency conducting layer; 108, p-electrode; 109, n-electrode.
Fig. 3 is the epitaxial structure schematic diagram of a kind of high power nitride LED structure of the present invention.
Fig. 4 is the real structural representation connect of the present invention's a kind of high power nitride LED structure n-electrode and resilient coating.
Fig. 5 is the structural representation of the present invention's a kind of high power nitride LED structure n-electrode and resilient coating virtual connection.
Label in figure is respectively:
201, substrate; 202, resilient coating; 203, the first layer of undoped gan; 204, n-layer;
205, active layer; 206, p-type layer; 207, transparency conducting layer; 208, p-electrode;
209, n-electrode; 210, the second layer of undoped gan.
Embodiment
Provide the embodiment of a kind of high power nitride LED structure of the present invention below in conjunction with accompanying drawing, 2 specific embodiments are provided.But it may be noted that enforcement of the present invention is not limited to following implementation content.
embodiment 1
See Fig. 3 and 4.A kind of high power nitride LED structure, comprises substrate 201, resilient coating 202, first layer of undoped gan 203, n-layer 204, active layer 205, p-type layer 206, second layer of undoped gan 210, transparency conducting layer 207, p-electrode 208 and n-electrode 209.Described substrate 201 adopts the one in sapphire, carborundum, gallium nitride or silicon materials.The preferred Sapphire Substrate 201 of the present embodiment.
The manufacture method of the high power nitride LED structure of the present embodiment is, adopt metal organic chemical compound vapor deposition method (MOCVD) grown buffer layer 202, first layer of undoped gan 203, n-layer 204, active layer 205, p-type layer 206, second layer of undoped gan 210 successively in Sapphire Substrate 201, its concrete growth step comprises:
(1) select corresponding method to clean according to the character of Sapphire Substrate 201, then Sapphire Substrate 201 is placed in epitaxial furnace.
(2) temperature is adjusted to 530 DEG C, grows the low temperature nitride gallium resilient coating 202 of 20nm thickness on the substrate 201.
(3) temperature is risen to 1050 DEG C, resilient coating 202 grows the first layer of undoped gan 203 of 1um thickness.
(4) temperature is adjusted to 950 DEG C, growth thickness is the n-layer 204 of 1um.
(5) cool the temperature to 750 DEG C, n-layer 204 grows the multiple quantum well active layer 205 of the InGaN/GaN in 5 cycles, wherein barrier layer growth temperature is 750 DEG C, thickness 12nm; Well layer growth temperature is 710 DEG C, thickness 1.5nm.
(6) temperature is risen to 930 DEG C again, active layer 205 grows the p-type layer 206 of 50nm thickness, described p-type layer 206 is for mixing Mg GaN layer, and doping content is 1.5 × 10
17cm
-3; Preferred concentration gradual change type structure.
(7) temperature is adjusted to 1050 DEG C, in p-type layer 206, growth thickness is second layer of undoped gan 210 of 20nm; Described second layer of undoped gan 210 selects intrinsic GaN material, and roughening process is not done at its top;
Then, the second layer of undoped gan 210 grows transparency conducting layer 207.
(8) after epitaxial structures growth is complete, on the transparency conducting layer 207 of epitaxial structure, make p-electrode 208 according to existing chip technology and make n-electrode 209; It is to be noted that when making n-electrode 209, its etch depth requires to etch into resilient coating 202, (see figure 4) on the resilient coating 202 n-electrode 209 being connected directly between expose, described n-electrode 209 with described resilient coating 202 for reality connects (directly contacting).
The high power nitride LED structure of the present embodiment is owing to introducing capacitance type structure, additional electric field can be formed on epitaxial structure both sides after powering up, piezoelectric effect impact can be reduced on the one hand, increase the migration rate of charge carrier, increase the recombination probability of charge carrier, thus improve luminous efficiency; Due to the protective effect of capacitance type structure time on the other hand, the antistatic effect of device can be increased.
embodiment 2
See Fig. 3 and 5.A kind of high power nitride LED structure, comprises substrate 201, resilient coating 202, first layer of undoped gan 203, n-layer 204, active layer 205, p-type layer 206, second layer of undoped gan 210, transparency conducting layer 207, p-electrode 208 and n-electrode 209.Described substrate 201 adopts the one in sapphire, carborundum, gallium nitride or silicon materials.The preferred Sapphire Substrate 201 of the present embodiment.Its concrete growth step comprises:
(1) select corresponding method to clean according to the character of Sapphire Substrate 201, then Sapphire Substrate 201 is placed in epitaxial furnace.
(2) temperature is adjusted to 560 DEG C, grows the low temperature nitride gallium resilient coating 202 of 35nm thickness on the substrate 201.
(3) temperature is risen to 1150 DEG C, resilient coating 202 grows the first layer of undoped gan 203 of 2.3um thickness.
(4) temperature is adjusted to 1250 DEG C, growth thickness is the n-layer 204 of 2.5um.
(5) cool the temperature to 860 DEG C, n-layer 204 grows the multiple quantum well active layer 205 of the InGaN/GaN in 15 cycles, wherein barrier layer growth temperature is 860 DEG C, and thickness is 15nm, and well layer growth temperature is 810 DEG C, and thickness is 2nm.
(6) temperature is risen to 1100 DEG C again, active layer 205 grows the p-type layer 206 of 300nm thickness, described p-type layer 206 is for mixing Mg GaN layer, and doping content is 1.5 × 10
17cm
-3, growth thickness is 150nm, and rear adjusting process parameter makes doping content gradient be reduced to 0, and gross thickness keeps 300nm.
(7) temperature is adjusted to 1150 DEG C, grows the second undoped layer 210 in p-type layer 206; Described second layer of undoped gan 210 selects intrinsic GaN material, and thickness is 50nm, and roughening process is done at its top; Described roughening treatment realizes by the adjustment technique such as temperature, pressure (parameter).
Then, the second layer of undoped gan 210 grows transparency conducting layer 207.
(8) after epitaxial structures growth is complete, on the transparency conducting layer 207 of epitaxial structure, make p-electrode 208 according to existing chip technology and make n-electrode 209.It is to be noted that when making n-electrode 209, its etch depth requires to etch into the first layer of undoped gan 203, but, the first layer of undoped gan 203 retained should be very thin, its degree is " close to exposing ", though make n-electrode 209 be connected in the first very thin layer of undoped gan 203, but described n-electrode 209 is the (see figure 5)s be indirectly connected with resilient coating 202 by the first very thin layer of undoped gan 203.
In example 2, owing to adopting p-type layer 206 mix the concentration gradient of Mg thus higher non-Doped GaN crystal mass can be obtained.Owing to introducing capacitance type structure, after powering up, additional electric field can be formed on epitaxial structure both sides, piezoelectric effect impact can be reduced on the one hand, increase the migration rate of charge carrier, increase the recombination probability of charge carrier, improve luminous efficiency.Meanwhile, due to the protective effect of capacitance type structure, the antistatic effect of device can be increased.Finally, due to alligatoring second layer of undoped gan 210, the bright dipping light path of device can be changed, thus improve the external quantum efficiency of device, obtain good luminous efficiency.
The foregoing is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from structure of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered within the scope of protection of the present invention.
Claims (5)
1. a high power nitride LED structure, resilient coating, the first layer of undoped gan, n-layer, active layer, p-type layer, transparency conducting layer, p-electrode and n-electrode is comprised in the one side of substrate, it is characterized in that, between p-type layer and transparency conducting layer, accompany one deck second layer of undoped gan, described transparency conducting layer makes p-electrode; Epitaxial structure is etched to and exposes resilient coating, described resilient coating makes n-electrode; Described p-type layer is for mixing Mg GaN structure sheaf, and its thickness is 50 ~ 300nm.
2. a kind of high power nitride LED structure according to claim 1, is characterized in that, described p-type layer or the structure of fixing for doping content or the structure for doping content gradual change.
3. a kind of high power nitride LED structure according to claim 1, is characterized in that, described second layer of undoped gan is thick 20 ~ 500nm, has the structure sheaf of roughened surface.
4. a kind of high power nitride LED structure according to claim 3, is characterized in that, described roughened surface comprises irregular matsurface and the graphical face of specification.
5. a kind of high power nitride LED structure according to claim 4, is characterized in that, described specification figure comprises circle, square, rectangle or hexagon.
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|---|---|---|---|---|
| US6657234B1 (en) * | 1999-06-07 | 2003-12-02 | Nichia Corporation | Nitride semiconductor device |
| CN1753197A (en) * | 2004-09-23 | 2006-03-29 | 璨圆光电股份有限公司 | Gallium nitride luminous diode structure |
| CN101335313A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Method for enhancing antistatic effect of gallium nitride based LED and gallium nitride based LED construction |
| CN101964386A (en) * | 2010-10-25 | 2011-02-02 | 厦门市三安光电科技有限公司 | Method for manufacturing surface-coarsened light emitting diode |
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| JP2009049395A (en) * | 2007-07-24 | 2009-03-05 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor light emitting element |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657234B1 (en) * | 1999-06-07 | 2003-12-02 | Nichia Corporation | Nitride semiconductor device |
| CN1753197A (en) * | 2004-09-23 | 2006-03-29 | 璨圆光电股份有限公司 | Gallium nitride luminous diode structure |
| CN101335313A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Method for enhancing antistatic effect of gallium nitride based LED and gallium nitride based LED construction |
| CN101964386A (en) * | 2010-10-25 | 2011-02-02 | 厦门市三安光电科技有限公司 | Method for manufacturing surface-coarsened light emitting diode |
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