CN102945901A - High-power nitride LED structure and fabrication method of structure - Google Patents
High-power nitride LED structure and fabrication method of structure Download PDFInfo
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- CN102945901A CN102945901A CN2012104218815A CN201210421881A CN102945901A CN 102945901 A CN102945901 A CN 102945901A CN 2012104218815 A CN2012104218815 A CN 2012104218815A CN 201210421881 A CN201210421881 A CN 201210421881A CN 102945901 A CN102945901 A CN 102945901A
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Abstract
The invention discloses a high-power nitride LED (light-emitting diode) structure. A buffer layer, a first undoped GaN layer, an n-shape layer, an active layer, a p-shaped layer, a second undoped GaN layer and a transparent conducting layer grow on one face of a substrate; a p electrode and an n electrode are arranged on the face of the substrate; the second undoped GaN layer grows between the p-shaped layer and the transparent conducting layer and is provided with a coarse surface structure; the thickness of the second undoped GaN layer is 20-100nm; the p electrode is fabricated on the transparent conducting layer; an epitaxial structure is etched till the buffer layer is exposed or almost exposed; and the n electrode is fabricated on the buffer layer or the first undoped GaN layer. The fabrication method is characterized in that the second undoped GaN layer grows on the p-shaped layer; the transparent conducting layer grows on the second undoped GaN layer; and then the p electrode and the n electrode are fabricated. The high-power nitride LED structure can form a capacitive structure; the lighting efficiency is improved; the impact of an piezoelectric effect can be reduced; the current congestion is improved; the radiated heat of an LED device is reduced; and the competitive capacity of a product is improved.
Description
Technical field
Patent of the present invention relates to field of semiconductor manufacture, is specifically related to a kind of high power nitride LED structure and manufacture method thereof.
Background technology
Light-emitting diode (LED) is a kind of electroluminescent semiconductor device of structural type that can convert the electrical signal to light signal.Gallium nitride (GaN) based light-emitting diode once again revolution on the human illumination history after the advantage such as little is described as the relay lamp occurring just with its high efficiency, long-life, energy-conserving and environment-protective, volume, becomes the focus that the research and development of international semiconductor and lighting field and industry are paid close attention to as solid state light emitter.Has continuously adjustable direct bandwidth as 0.7～6.2eV take gallium nitride (GaN), InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) and indium nitride gallium aluminium (AlGaInN) as main III～V group nitride material, they have covered the spectral region from the ultraviolet light to the infrared light, are the ideal materials of making blue light, green glow and white light emitting device.
Existing conventional GaN base nitride LED structure (referring to Fig. 1) is at the one side epitaxial growth buffer 102 of Sapphire Substrate 101, not Doped GaN layer 103, N-shaped layer 104, active layer 105, p-type layer 106, transparency conducting layer 107; P electrode 108 is set and n electrode 109(is set referring to Fig. 2 at the upper surface of resilient coating 102 at the upper surface of transparency conducting layer 107).Described p electrode 108 and n electrode 109 are positioned at the same side of Sapphire Substrate 101.The electric current of light emitting semiconductor device operating room is flowed through p-type layer 106, active layer 105, N-shaped layer 104 arrival n electrode 109(referring to Fig. 2 from p electrode 108).But because the low piezoelectric effect that reaches of the activation efficiency of Mg affects in the p-type layer 106, the luminous efficiency of device is always not high.Simultaneously, because n electrode 109 generally is produced on above the N-shaped layer 104, cause blocking up seriously at the corner location electric current, thereby comparatively serious heating problem occurs, this not only affects the useful life of device, also can make the light decay of device more serious.
Because Sapphire Substrate is insulating material, the electric charge that produces because of factors such as friction, induction, conduction is difficult to discharge from the substrate direction, when charge accumulated will produce static release phenomenon (ElectriStatic Discharge is called for short ESD) to a certain extent.So the GaN base LED chip take sapphire as substrate belongs to electrostatic sensitivity device, its antistatic effect is relatively poor.Some enterprise or research institution have introduced comparatively complicated device making method for the antistatic effect that improves the GaN base device now, and certain effect is arranged.But, introduce the manufacturing cost that complicated manufacture method can improve device for solving antistatic problem separately.So, still should study the new structure of in epitaxial process introducing to resist static release phenomenon (ESD) to the damage of device.
Summary of the invention
The objective of the invention is and to address the above problem, a kind of high power nitride LED structure that contains capacitance type structure is provided, by in the LED epitaxial wafer, forming capacitance structure, improve on the one hand carrier mobility and bright dipping light path in the device, increase the charge carrier recombination probability, the light extraction efficiency that improves device reduces the impact of piezoelectric effect simultaneously; Between transparency conducting layer and p-type layer, add on the other hand second not the Doped GaN layer play cushioning effect, improve the electric current jam, reduce heating, thereby prolong device useful life, reduce light decay; Again on the one hand, because the protective effect of capacitance type structure can improve the antistatic effect of device.Second purpose of the present invention is that the manufacture method of described high power nitride LED structure is provided.
For achieving the above object, the technical scheme taked of the present invention is as follows.
A kind of high power nitride LED structure, one side at substrate comprises resilient coating, first not Doped GaN layer, N-shaped layer, active layer, p-type layer, transparency conducting layer, p electrode and n electrode, it is characterized in that, between p-type layer and transparency conducting layer, accompany not Doped GaN layer of one deck second, make the p electrode at described transparency conducting layer; Epitaxial structure is etched to expose resilient coating or approach exposes resilient coating, on described resilient coating or approach expose resilient coating first not the Doped GaN layer make the n electrode; Described p-type layer is for mixing Mg GaN structure sheaf, and its thickness is 50～300nm.
Optionally, described p-type layer or for the fixing structure of doping content or be the structure of doping content gradual change.
Further, described second not the Doped GaN layer be thick 20～500nm, have a structure sheaf of roughened surface.
Further, described roughened surface comprises irregular matsurface and the graphical face of specification.
Further, described specification figure comprises circle, bar shaped, square, rectangle or hexagon.
Further, described n electrode and described resilient coating are directly (directly contact) or virtual connection (indirect contact), and described virtual connection is: described n electrode by very thin (degree is " approaching exposing ") first not the Doped GaN layer be connected with described resilient coating.
For realizing above-mentioned the second purpose, the technical scheme that the present invention takes is as follows.
A kind of manufacture method of high power nitride LED structure adopts metal organic chemical compound vapor deposition method (MOCVD) growth, it is characterized in that, its growth step comprises:
(1) selects corresponding method that substrate is cleaned according to substrate character, then substrate is placed in the epitaxial furnace;
(2) furnace temperature is transferred to 530～560 ℃, at the low temperature gallium nitride resilient coating of Grown 20～35nm thickness;
(3) furnace temperature is risen to 1050～1150 ℃, at grow the first Doped GaN layer not of 1～2.3um thickness of resilient coating;
(4) furnace temperature is transferred to 950～1250 ℃, growth thickness is the N-shaped layer of 1～2.5um;
(5) furnace temperature is down to 750～860 ℃, in the grow multiple quantum well active layer of InGaN/GaN in 5～15 cycles of N-shaped layer;
(6) furnace temperature is risen to 930～1100 ℃ again, at the grow p-type layer of 50～300nm thickness of active layer;
(7) furnace temperature is transferred to 1050～1150 ℃, growth thickness is the second Doped GaN layer not of 20～500nm on the p-type layer;
(8) make transparency conducting layer, p electrode and n electrode according to chip technology.
Further, the described p-type layer of step (6) preferred concentration gradual change type structure.
Further, step (7) described second not Doped GaN layer has roughened surface, and described roughened surface comprises irregular matsurface and the graphical face of specification, and described roughened surface adopts and adjusts the epitaxy technique parameter, photoetching adds etched chip technology and makes.
Further, described specification figure comprises circle, bar shaped, square, rectangle or hexagon.
Good effect of the present invention is: (1) is by inserting the second Doped GaN layer not in epitaxial structure, can form capacitance type structure, improve the especially mobility in hole of carrier mobility, improve the combined efficiency in active area electronics and hole, can reduce simultaneously the impact of piezoelectric effect, improve the anlistatig ability of device.
(2) in epitaxial structure, insert roughening second not the Doped GaN layer can change the bright dipping light path, increase the probability that light radiation goes out device, improve the light extraction efficiency of device.
(3) introduce second not simultaneously virtual connection of Doped GaN layer n electrode can improve the CURRENT DISTRIBUTION of device, reduce heating, thereby prolong device useful life, reduce light decay.
Description of drawings
Fig. 1 is the epitaxial structure schematic diagram of existing nitride LED structure;
The structural representation that Fig. 2 connects for existing nitride LED structure electrode.
Label among the figure is respectively:
101, substrate; 102, resilient coating; 103, Doped GaN layer not; 104, N-shaped layer; 105, active layer;
106, p-type layer; 107, transparency conducting layer; 108, p electrode; 109, n electrode.
Fig. 3 is the epitaxial structure schematic diagram of a kind of high power nitride LED of the present invention structure.
Fig. 4 is the real structural representation that connects of a kind of high power nitride LED of the present invention structure n electrode and resilient coating.
Fig. 5 is the structural representation of a kind of high power nitride LED of the present invention structure n electrode and resilient coating virtual connection.
Label among the figure is respectively:
201, substrate; 202, resilient coating; 203, the first Doped GaN layer not; 204, N-shaped layer;
205, active layer; 206, p-type layer; 207, transparency conducting layer; 208, p electrode;
209, n electrode; 210, the second Doped GaN layer not.
Embodiment
Provide the embodiment of a kind of high power nitride LED of the present invention structure below in conjunction with accompanying drawing, 2 specific embodiments are provided.But it may be noted that enforcement of the present invention is not limited to following implementation content.
Embodiment 1
Referring to Fig. 3 and 4.A kind of high power nitride LED structure comprises not Doped GaN layer 210, transparency conducting layer 207, p electrode 208 and n electrode 209 of Doped GaN layer 203, N-shaped layer 204, active layer 205, p-type layer 206, second of substrate 201, resilient coating 202, first.Described substrate 201 adopts a kind of in sapphires, carborundum, gallium nitride or the silicon materials.The preferred Sapphire Substrate 201 of the present embodiment.
The manufacture method of the high power nitride LED structure of the present embodiment is, adopt metal organic chemical compound vapor deposition method (MOCVD) grown buffer layer 202, first Doped GaN layer 203, N-shaped layer 204, active layer 205, p-type layer 206, second Doped GaN layer 210 not successively on Sapphire Substrate 201, its concrete growth step comprises:
(1) selects corresponding method to clean according to the character of Sapphire Substrate 201, then Sapphire Substrate 201 is placed in the epitaxial furnace.
(2) temperature is transferred to 530 ℃, at the low temperature gallium nitride resilient coating 202 of substrate 201 growth 20nm thickness.
(3) temperature is risen to 1050 ℃, at the first Doped GaN layer 203 not of resilient coating 202 growth 1um thickness.
(4) temperature is transferred to 950 ℃, growth thickness is the N-shaped layer 204 of 1um.
(5) cool the temperature to 750 ℃, in the multiple quantum well active layer 205 of the InGaN/GaN in N-shaped layer 204 5 cycles of growth, its Zhonglei layer growth temperature is 750 ℃, thickness 12nm; The trap layer growth temperature is 710 ℃, thickness 1.5nm.
(6) temperature is risen to 930 ℃ again, at the p-type layer 206 of active layer 205 growth 50nm thickness, described p-type layer 206 is for mixing Mg GaN layer, and doping content is 1.5 * 10
17Cm
-3Preferred concentration gradual change type structure.
(7) temperature is transferred to 1050 ℃, growth thickness is the second Doped GaN layer 210 not of 20nm on p-type layer 206; Described second not Doped GaN layer 210 select intrinsic GaN material, its top is not done roughening and is processed;
Then, at the second Doped GaN layer 210 growth transparency conducting layers 207 not.
(8) after the extension structure growth is complete, makes p electrode 208 and make n electrode 209 at the transparency conducting layer 207 of epitaxial structure according to existing chip technology; Be noted that: when making n electrode 209, its etch depth requires to etch into resilient coating 202, makes n electrode 209 can directly be connected to (see figure 4) on the resilient coating 202 that exposes, and described n electrode 209 is real connect (directly contacting) with described resilient coating 202.
The high power nitride LED structure of the present embodiment is owing to having introduced capacitance type structure, can form on the epitaxial structure both sides additional electric field after powering up, can reduce on the one hand the piezoelectric effect impact, increase the migration rate of charge carrier, increase the recombination probability of charge carrier, thereby improve luminous efficiency; Owing to the protective effect of capacitance type structure, can increase the antistatic effect of device in the time of on the other hand.
Embodiment 2
Referring to Fig. 3 and 5.A kind of high power nitride LED structure comprises not Doped GaN layer 210, transparency conducting layer 207, p electrode 208 and n electrode 209 of Doped GaN layer 203, N-shaped layer 204, active layer 205, p-type layer 206, second of substrate 201, resilient coating 202, first.Described substrate 201 adopts a kind of in sapphires, carborundum, gallium nitride or the silicon materials.The preferred Sapphire Substrate 201 of the present embodiment.Its concrete growth step comprises:
(1) selects corresponding method to clean according to the character of Sapphire Substrate 201, then Sapphire Substrate 201 is placed in the epitaxial furnace.
(2) temperature is transferred to 560 ℃, at the low temperature gallium nitride resilient coating 202 of substrate 201 growth 35nm thickness.
(3) temperature is risen to 1150 ℃, at the first Doped GaN layer 203 not of resilient coating 202 growth 2.3um thickness.
(4) temperature is transferred to 1250 ℃, growth thickness is the N-shaped layer 204 of 2.5um.
(5) cool the temperature to 860 ℃, in the multiple quantum well active layer 205 of the InGaN/GaN in N-shaped layer 204 15 cycles of growth, its Zhonglei layer growth temperature is 860 ℃, and thickness is 15nm, and the trap layer growth temperature is 810 ℃, and thickness is 2nm.
(6) temperature is risen to 1100 ℃ again, at the p-type layer 206 of active layer 205 growth 300nm thickness, described p-type layer 206 is for mixing Mg GaN layer, and doping content is 1.5 * 10
17Cm
-3, growth thickness is 150nm, and rear adjusting process parameter makes the doping content gradient be reduced to 0, and gross thickness keeps 300nm.
(7) temperature is transferred to 1150 ℃, at p-type layer 206 growth the second undoped layer 210; Described second not Doped GaN layer 210 select intrinsic GaN material, thickness is 50nm, its top is done roughening and is processed; Described roughening treatment can realize by adjusting the techniques (parameter) such as temperature, pressure.
Then, at the second Doped GaN layer 210 growth transparency conducting layers 207 not.
(8) after the extension structure growth is complete, makes p electrode 208 and make n electrode 209 at the transparency conducting layer 207 of epitaxial structure according to existing chip technology.Be noted that: when making n electrode 209, its etch depth requires to etch into the first Doped GaN layer 203 not, but, keep first not Doped GaN layer 203 should be very thin, its degree is " approach and expose ", though make n electrode 209 be connected to very thin first not on the Doped GaN layer 203, still, described n electrode 209 is by the very thin first (see figure 5) of indirectly being connected with resilient coating 202 of Doped GaN layer 203 not.
In embodiment 2, thereby because the concentration gradient that adopts p-type layer 206 to mix Mg can obtain higher not Doped GaN crystal mass.Owing to having introduced capacitance type structure, can form on the epitaxial structure both sides additional electric field after powering up, can reduce on the one hand the piezoelectric effect impact, increase the migration rate of charge carrier, increase the recombination probability of charge carrier, improve luminous efficiency.Meanwhile, owing to the protective effect of capacitance type structure, can increase the antistatic effect of device.At last, because alligatoring second Doped GaN layer 210 not can change the bright dipping light path of device, thereby improve the external quantum efficiency of device, obtain preferably luminous efficiency.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from structure of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered within the scope of protection of the present invention.
Claims (10)
1. high power nitride LED structure, one side at substrate comprises resilient coating, first not Doped GaN layer, N-shaped layer, active layer, p-type layer, transparency conducting layer, p electrode and n electrode, it is characterized in that, between p-type layer and transparency conducting layer, accompany not Doped GaN layer of one deck second, make the p electrode at described transparency conducting layer; Epitaxial structure is etched to expose resilient coating or approach exposes resilient coating, on described resilient coating or approach expose resilient coating first not the Doped GaN layer make the n electrode; Described p-type layer is for mixing Mg GaN structure sheaf, and its thickness is 50～300nm.
2. a kind of high power nitride LED structure according to claim 1 is characterized in that, described p-type layer or for the fixing structure of doping content or be the structure of doping content gradual change.
3. a kind of high power nitride LED structure according to claim 1 is characterized in that, described second not the Doped GaN layer be thick 20～500nm, have a structure sheaf of roughened surface.
4. a kind of high power nitride LED structure according to claim 3 is characterized in that, described roughened surface comprises irregular matsurface and the graphical face of specification.
5. a kind of high power nitride LED structure according to claim 4 is characterized in that, described specification figure comprises circle, bar shaped, square, rectangle or hexagon.
6. a kind of high power nitride LED structure according to claim 1, it is characterized in that, described n electrode and described resilient coating are for directly being connected or virtual connection, and described virtual connection is: described n electrode pass through very thin first not the Doped GaN layer be connected with described resilient coating.
7. the manufacture method of a high power nitride LED structure adopts the growth of metal organic chemical compound vapor deposition method, it is characterized in that, its growth step comprises:
(1) selects corresponding method that substrate is cleaned according to substrate character, then substrate is placed in the epitaxial furnace;
(2) furnace temperature is transferred to 530～560 ℃, at the low temperature gallium nitride resilient coating of Grown 20～35nm thickness;
(3) furnace temperature is risen to 1050～1150 ℃, at grow the first Doped GaN layer not of 1～2.3um thickness of resilient coating;
(4) furnace temperature is transferred to 950～1250 ℃, growth thickness is the N-shaped layer of 1～2.5um;
(5) furnace temperature is down to 750～860 ℃, in the grow multiple quantum well active layer of InGaN/GaN in 5～15 cycles of N-shaped layer;
(6) furnace temperature is risen to 930～1100 ℃ again, at the grow p-type layer of 50～300nm thickness of active layer;
(7) furnace temperature is transferred to 1050～1150 ℃, growth thickness is the second Doped GaN layer not of 20～500nm on the p-type layer;
(8) make transparency conducting layer, p electrode and n electrode according to chip technology.
8. the manufacture method of a kind of high power nitride LED structure according to claim 7 is characterized in that, the described p-type layer of step (6) preferred concentration gradual change type structure.
9. the manufacture method of a kind of high power nitride LED structure according to claim 7, it is characterized in that, step (7) described second not Doped GaN layer has roughened surface, described roughened surface comprises irregular matsurface and the graphical face of specification, and described roughened surface adopts and adjusts the epitaxy technique parameter, photoetching adds etched chip technology and makes.
10. the manufacture method of a kind of high power nitride LED structure according to claim 9 is characterized in that, described specification figure comprises circle, bar shaped, square, rectangle or hexagon.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206719A (en) * | 2015-09-28 | 2015-12-30 | 厦门乾照光电股份有限公司 | Epitaxial growth method for nitride series light-emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657234B1 (en) * | 1999-06-07 | 2003-12-02 | Nichia Corporation | Nitride semiconductor device |
| CN1753197A (en) * | 2004-09-23 | 2006-03-29 | 璨圆光电股份有限公司 | Gallium nitride luminous diode structure |
| CN101335313A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Method for enhancing antistatic effect of gallium nitride based LED and gallium nitride based LED construction |
| US20090039373A1 (en) * | 2007-07-24 | 2009-02-12 | Toyoda Gosei Co., Ltd. | Group III nitride-based compound semiconductor light emitting device |
| CN101964386A (en) * | 2010-10-25 | 2011-02-02 | 厦门市三安光电科技有限公司 | Method for manufacturing surface-coarsened light emitting diode |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657234B1 (en) * | 1999-06-07 | 2003-12-02 | Nichia Corporation | Nitride semiconductor device |
| CN1753197A (en) * | 2004-09-23 | 2006-03-29 | 璨圆光电股份有限公司 | Gallium nitride luminous diode structure |
| CN101335313A (en) * | 2007-06-29 | 2008-12-31 | 上海蓝光科技有限公司 | Method for enhancing antistatic effect of gallium nitride based LED and gallium nitride based LED construction |
| US20090039373A1 (en) * | 2007-07-24 | 2009-02-12 | Toyoda Gosei Co., Ltd. | Group III nitride-based compound semiconductor light emitting device |
| CN101964386A (en) * | 2010-10-25 | 2011-02-02 | 厦门市三安光电科技有限公司 | Method for manufacturing surface-coarsened light emitting diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206719A (en) * | 2015-09-28 | 2015-12-30 | 厦门乾照光电股份有限公司 | Epitaxial growth method for nitride series light-emitting diode |
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