CN102945892B - 一种太阳能电池制造方法 - Google Patents
一种太阳能电池制造方法 Download PDFInfo
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- CN102945892B CN102945892B CN201210440946.0A CN201210440946A CN102945892B CN 102945892 B CN102945892 B CN 102945892B CN 201210440946 A CN201210440946 A CN 201210440946A CN 102945892 B CN102945892 B CN 102945892B
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- silicon chip
- silicon
- silicon nitride
- doping
- chip surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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CN201210440946.0A CN102945892B (zh) | 2012-11-07 | 2012-11-07 | 一种太阳能电池制造方法 |
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CN201210440946.0A CN102945892B (zh) | 2012-11-07 | 2012-11-07 | 一种太阳能电池制造方法 |
Publications (2)
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CN102945892A CN102945892A (zh) | 2013-02-27 |
CN102945892B true CN102945892B (zh) | 2015-08-05 |
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CN201210440946.0A Expired - Fee Related CN102945892B (zh) | 2012-11-07 | 2012-11-07 | 一种太阳能电池制造方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104966766B (zh) * | 2013-04-01 | 2017-01-18 | 南通大学 | 太阳能电池的选择性掺杂方法 |
CN103227238B (zh) * | 2013-04-01 | 2015-11-18 | 林卓威 | 一种单晶硅太阳能电池的生产工艺 |
CN103165761B (zh) * | 2013-04-01 | 2015-07-01 | 南通大学 | 一种太阳能电池的制造方法 |
CN108598267B (zh) * | 2018-06-08 | 2021-09-24 | 常州福佑达智能装备科技有限公司 | 一种异质结太阳能电池及其制备方法 |
CN109671807A (zh) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | 一种太阳能电池制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300463A (en) * | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
CN1451176A (zh) * | 2000-07-05 | 2003-10-22 | 微米技术股份有限公司 | 相对于未掺杂二氧化硅和氮化硅能选择性蚀刻掺杂二氧化硅的蚀刻剂,其使用方法和形成的结构 |
CN101800266A (zh) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | 一种选择性发射极晶体硅太阳能电池的制备方法 |
CN102122683A (zh) * | 2011-01-27 | 2011-07-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 采用腐蚀浆料法制备单晶硅太阳能电池选择发射极的工艺 |
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2012
- 2012-11-07 CN CN201210440946.0A patent/CN102945892B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300463A (en) * | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
CN1451176A (zh) * | 2000-07-05 | 2003-10-22 | 微米技术股份有限公司 | 相对于未掺杂二氧化硅和氮化硅能选择性蚀刻掺杂二氧化硅的蚀刻剂,其使用方法和形成的结构 |
CN101800266A (zh) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | 一种选择性发射极晶体硅太阳能电池的制备方法 |
CN102122683A (zh) * | 2011-01-27 | 2011-07-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 采用腐蚀浆料法制备单晶硅太阳能电池选择发射极的工艺 |
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Inventor after: Deng Jie Inventor after: Hua Guoran Inventor after: Wang Qiang Inventor after: Zhang Zhuqing Inventor after: Cao Haiping Inventor after: Zhou Yuwei Inventor after: Zhu Haifeng Inventor after: Ju Zhilan Inventor before: Hua Guoran Inventor before: Wang Qiang Inventor before: Zhang Zhuqing Inventor before: Cao Haiping Inventor before: Zhou Yuwei Inventor before: Zhu Haifeng Inventor before: Ju Zhilan |
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Free format text: CORRECT: INVENTOR; FROM: HUA GUORAN WANG QIANG ZHANG ZHUQING CAO HAIPING ZHOU YUWEI ZHU HAIFENG JU ZHILAN TO: DENG JIE HUA GUORAN WANG QIANG ZHANG ZHUQING CAO HAIPING ZHOU YUWEI ZHU HAIFENG JU ZHILAN |
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