CN102945835A - Electronic packaging housing - Google Patents
Electronic packaging housing Download PDFInfo
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- CN102945835A CN102945835A CN2012104860385A CN201210486038A CN102945835A CN 102945835 A CN102945835 A CN 102945835A CN 2012104860385 A CN2012104860385 A CN 2012104860385A CN 201210486038 A CN201210486038 A CN 201210486038A CN 102945835 A CN102945835 A CN 102945835A
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- nickel
- plating layer
- gold plated
- plated layer
- coating
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Abstract
The invention discloses an electronic packaging housing and relates to the technical field of electronic packaging. The housing comprises a housing substrate, a nickel plating layer arranged on the housing substrate, a top gold plating layer arranged on the nickel plating layer and a nickel-cobalt plating layer which is arranged between the nickel plating layer and the top gold plating layer. The nickel-cobalt plating layer is arranged between the nickel plating layer and the top gold plating layer, so that the problem that nickel plating layer brittle creaking exists in a housing coating structure is solved, the spread of nickel to the top gold plating layer is greatly reduced, the function and application reliability of the top gold plating layer can be guaranteed and improved, the application reliability of the electronic packaging housing is improved and the amount of precious metal gold is reduced.
Description
Technical field
The present invention relates to technical field of electronic encapsulation.
Background technology
Electronic encapsulation shell in the past comprises nickel coating and Gold plated Layer.Electronic encapsulation shell need to be in the time of 420 ℃ the sinterable silicon chip.Under 420 ℃ of high temperature actions, the silicon in the silicon can be diffused in the nickel coating of electronic encapsulation shell, causes nickel coating embrittlement cracking, and chip comes off from surface, shell weld zone; The Gold plated Layer general thickness is 3 microns, experiences 300 ℃, the bake process of 30min, and the nickel in the shell nickel coating can diffuse in the Gold plated Layer of case surface, causes Gold plated Layer rubicundity (visual inspection), thereby affects the function and application of Gold plated Layer.
Summary of the invention
Technical problem to be solved by this invention provides a kind of electronic encapsulation shell, by nickel plating cobalt layer is set between nickel coating and top Gold plated Layer, can effectively prevent from occurring in the shell coating structure nickel coating brittle cracking problem, and reduced widely the diffusion of nickel to the top Gold plated Layer, improve and guaranteed the reliability of the function and application of top Gold plated Layer, improved the application reliability of electronic encapsulation shell; Also can save simultaneously the consumption of precious metal gold.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of electronic encapsulation shell comprises shell basic unit, is located at the nickel coating in the shell basic unit and is located at top Gold plated Layer on the nickel coating; Also comprise the nickel plating cobalt layer of being located between nickel coating and the top Gold plated Layer.
Preferably, also be provided with middle Gold plated Layer between described nickel plating cobalt layer and the nickel coating.
Preferably, the thickness of described nickel plating cobalt layer is the 1-3 micron.
Preferably, the thickness of described top Gold plated Layer is 1.8 microns.
The beneficial effect that adopts technique scheme to produce is: introduce nickel cobalt coating in electronic encapsulation shell coating after, nickel cobalt coating can prevent the thermal diffusion of silicon, thereby prevents from occurring in the shell coating structure problem of nickel coating brittle cracking; Simultaneously, also reduced widely the diffusion of nickel to the top Gold plated Layer, Effective Raise the reliability of function and application of top Gold plated Layer.The present invention can improve the application reliability of electronic encapsulation shell greatly, also can save simultaneously the consumption of precious metal gold.As, the electronic encapsulation shell of nickel plating cobalt layer, nickel plating cobalt layer thickness is the 1-3 micron, the top plated thickness is 1.8 microns, experiences 300 ℃, the bake process of 30min, owing to greatly having slowed down and having reduced the diffusion of nickel to Gold plated Layer, therefore top Gold plated Layer color is normal, top Gold plated Layer function is used unaffected, thereby improves the reliability that shell is used.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1.
Fig. 2 is the structural representation of the embodiment of the invention 2.
In the accompanying drawing: 1, housing base; 2, nickel coating; 3, nickel plating cobalt layer; 4, top Gold plated Layer; 5, middle part Gold plated Layer.
Embodiment
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Embodiment 1, as shown in Figure 1, the invention discloses a kind of electronic encapsulation shell, electronic encapsulation shell is the packaging system that uses in the Electronic Packaging process, the effect of Electronic Packaging is to lay fixedly built-in chip, the Protective IC built-in chip, strengthen the ability of built-in chip environmental adaptation, and namely contact is put in the riveting on the integrated circuit (IC) chip, be to be welded on the pin of encapsulating package, existing a kind of electronic encapsulation shell comprises housing base 1, be located at the nickel coating 2 on the housing base 1 and be located at top Gold plated Layer 4 on the nickel coating 2; Because sinterable silicon chip when electronic encapsulation shell need to be at 420 ℃ in concrete use procedure, under 420 ℃ of high temperature actions, silicon in the silicon can be diffused in the nickel coating of electronic encapsulation shell, causes nickel coating embrittlement cracking, and chip comes off from surface, shell weld zone; The electronic encapsulation shell that does not add nickel cobalt coating, 3 microns of plated thickness, experience 300 ℃, the bake process of 30min, nickel in the shell nickel coating can diffuse in the top Gold plated Layer of case surface, cause top Gold plated Layer rubicundity (visual inspection), affect top Gold plated Layer function and use, the disclosed a kind of electronic encapsulation shell of the present invention also comprises the nickel plating cobalt layer 3 of being located between nickel coating 2 and the top Gold plated Layer 4; The thickness of described nickel plating cobalt layer 3 is the 1-3 micron, the coating order is followed successively by housing base from inside to outside, nickel coating, nickel plating cobalt layer and top Gold plated Layer, because nickel plating cobalt layer is comparatively stable, prevent that effectively the nickel in the nickel coating is diffused in the Gold plated Layer of top, and then guarantee the electronic encapsulation shell dependability.
The thickness of described nickel plating cobalt layer 3 can be 1 micron or 3 microns, and the thickness of top Gold plated Layer is 1.8 microns; 3 microns of plated thickness that do not add the electronic encapsulation shell of nickel cobalt coating, experience 300 ℃, the bake process of 30min, the nickel in the nickel coating can diffuse in the top Gold plated Layer of case surface, cause top Gold plated Layer rubicundity (visual inspection), affect the Gold plated Layer function and use.
The electronic encapsulation shell that adds nickel cobalt coating, plated thickness is adjusted into 1.8 microns, experience 300 ℃, the bake process of 30min, slowed down and reduced the diffusion of nickel to Gold plated Layer, shell Gold plated Layer color normal (visual inspection), the Gold plated Layer function is used unaffected, thereby improve the shell application reliability, save simultaneously the gold consumption.
In sum, the present invention forms brand-new electronic encapsulation shell coating structure by introduce nickel plating cobalt layer in the electronic encapsulation shell coating structure, improves the shell application reliability.
Coating implementation method among the present invention is as follows: the first step is carried out housing base plating pre-treatment, comprise and use liquid detergent solution, chemical deoiling and degreasing solution, chromic acid solution, sodium sulfite solution, sulfuric acid solution and hydrochloric acid solution clean, deoil and pickling, carry out nickel preplating after finishing the plating pre-treatment, further finish nickel plating and nickel plating cobalt layer, cobalt atom content is controlled at 15%～30%(atomic ratio in the nickel plating cobalt layer), on nickel plating cobalt layer, finish the top Gold plated Layer at last, can certainly before nickel plating cobalt layer, carry out the operation of middle part Gold plated Layer, by nickel plating cobalt layer is set, improves the electronic encapsulation shell application reliability and fall.
Claims (4)
1. electronic encapsulation shell comprises housing base (1), is located at the nickel coating (2) on the housing base (1) and is located at top Gold plated Layer (4) on the nickel coating (2); It is characterized in that: also comprise the nickel plating cobalt layer (3) of being located between nickel coating (2) and the top Gold plated Layer (4).
2. electronic encapsulation shell according to claim 1 is characterized in that: also be provided with middle part Gold plated Layer (5) between described nickel plating cobalt layer (3) and the nickel coating (2).
3. electronic encapsulation shell according to claim 1 and 2, it is characterized in that: the thickness of described nickel plating cobalt layer (3) is the 1-3 micron.
4. electronic encapsulation shell according to claim 3, it is characterized in that: the thickness of described top Gold plated Layer (4) is 1.8 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104860385A CN102945835A (en) | 2012-11-26 | 2012-11-26 | Electronic packaging housing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104860385A CN102945835A (en) | 2012-11-26 | 2012-11-26 | Electronic packaging housing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102945835A true CN102945835A (en) | 2013-02-27 |
Family
ID=47728765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104860385A Pending CN102945835A (en) | 2012-11-26 | 2012-11-26 | Electronic packaging housing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102945835A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318957A (en) * | 1976-08-05 | 1978-02-21 | Nec Corp | Electrode structure of semiconductor device |
| US5384204A (en) * | 1990-07-27 | 1995-01-24 | Shinko Electric Industries Co. Ltd. | Tape automated bonding in semiconductor technique |
| TW459364B (en) * | 1999-04-28 | 2001-10-11 | Ind Tech Res Inst | Method and structure for strengthening lead frame used for semiconductor |
| JP2003234551A (en) * | 2002-02-07 | 2003-08-22 | Kyocera Corp | Wiring board |
| CN101649456A (en) * | 2009-08-27 | 2010-02-17 | 中国电子科技集团公司第四十三研究所 | Plating layer for electrochemistry corrosion resistant electronic encapsulation shell |
-
2012
- 2012-11-26 CN CN2012104860385A patent/CN102945835A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318957A (en) * | 1976-08-05 | 1978-02-21 | Nec Corp | Electrode structure of semiconductor device |
| US5384204A (en) * | 1990-07-27 | 1995-01-24 | Shinko Electric Industries Co. Ltd. | Tape automated bonding in semiconductor technique |
| TW459364B (en) * | 1999-04-28 | 2001-10-11 | Ind Tech Res Inst | Method and structure for strengthening lead frame used for semiconductor |
| JP2003234551A (en) * | 2002-02-07 | 2003-08-22 | Kyocera Corp | Wiring board |
| CN101649456A (en) * | 2009-08-27 | 2010-02-17 | 中国电子科技集团公司第四十三研究所 | Plating layer for electrochemistry corrosion resistant electronic encapsulation shell |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130227 |