CN102941938A - Sapphire sheet adhering method - Google Patents

Sapphire sheet adhering method Download PDF

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Publication number
CN102941938A
CN102941938A CN 201210408905 CN201210408905A CN102941938A CN 102941938 A CN102941938 A CN 102941938A CN 201210408905 CN201210408905 CN 201210408905 CN 201210408905 A CN201210408905 A CN 201210408905A CN 102941938 A CN102941938 A CN 102941938A
Authority
CN
China
Prior art keywords
sapphire
sapphire wafer
work
pasting method
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 201210408905
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Chinese (zh)
Inventor
吴云才
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Shangcheng Science & Technology Co Ltd
Original Assignee
Zhejiang Shangcheng Science & Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Shangcheng Science & Technology Co Ltd filed Critical Zhejiang Shangcheng Science & Technology Co Ltd
Priority to CN 201210408905 priority Critical patent/CN102941938A/en
Publication of CN102941938A publication Critical patent/CN102941938A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a sapphire sheet adhering method. The sapphire sheet adhering method comprises the following steps: preparation of sapphire sheets: cutting a sapphire workpiece into the sapphire sheets by a cutting and polishing process; cleaning: performing dustless treatment on each sapphire sheet and the surface of the workpiece; and sheet adhesion: tightly adhering the sapphire sheets to the surface of the workpiece according to a vacuum principle. Commercially available plastic screen protective films are replaced by the sapphire sheets. The sapphire has high hardness, high melting point and high light transmissivity; in the artificial sapphire, the wear resistance is high, the hardness is second only to that of diamond and reaches Moh's 9, and the light-transmitting performance is not lower than that of glass; the sapphire has large surface tension due to the compactness; and due to the characteristics, the sapphire sheets are suitable for film adhesion of mobile phones and the like.

Description

A kind of sapphire pasting method
Technical field
The present invention relates to a kind of sapphire pasting method.
Background technology
Screen protecting film is a kind of transparent medium of using; main employing PE or PET are former material at present; former material mainly contains dividing of Taiwan and Japan; the ordinary screen protective film only plays the effect of dust protection; slightly the crystal that has of good any is prevented scraping coating; can play the effect of anti-scratch; best screen protecting film is to participate in metallic element; play isolated electromagnetic wave; reduce the effects such as electromagnetic radiation, also can reduce the dazzling sense of watching for a long time screen to produce simultaneously, also can be used for effectively protecting computer screen; do not damage score.
Effectively reflection-proof of optical coating is arranged on the market, and light is scattered in the effectively radiation proof of AG optical coating, can not cause eye fatigue, can guarantee visual effect again simultaneously, as there not being pad pasting, can protect again our eyes.
But above-mentioned prior art screen protecting film can not provide enough scratch resistant performances, and owing to the light transmittance of pad pasting produces the light transmittance loss than glass is low, affects Showing Effectiveness On Screen.
Summary of the invention
The invention provides a kind of sapphire pasting method, substitute commercially available plastic material screen protecting film with sapphire wafer.Because sapphire hardness is high, fusing point is high, light transmission good, the sapphire of Artificial Growth has good resistance to abrasion, hardness is only second to adamas and reaches 9 grades of Mohs, light transmission is not less than glass, sapphire compactness makes it have larger surface tension simultaneously, and above-mentioned characteristic is very suitable for the screen sticking films such as mobile phone.
Concrete technical scheme of the present invention is:
A kind of sapphire pasting method is characterized in that this pasting method may further comprise the steps:
The preparation of sapphire wafer becomes sapphire wafer with grinding and polishing process with the sapphire work piece cut by cutting;
Cleaning carries out dustlessization processing with sapphire wafer and surface of the work;
The paster step utilizes the vacuum principle that the sapphire paster is fitted tightly in surface of the work.
Described pasting method also comprises:
Homogenizing step if bubble occurs after the paster step is finished, then adds operating fluid in sapphire wafer one side, and opposite side is inhaled with absorbent paper, and bubble is displaced.
Described paster step is:
Drip operating fluid at the surface of the work middle part, clamp an end of sapphire wafer with hand or tweezers, the other end leans against on the surface of the work, make sapphire wafer and surface of the work be miter angle, slowly put down sapphire wafer, make sapphire wafer slowly contact operating fluid, thereby avoid occurring bubble.
A sticky paper layer is posted on described sapphire wafer surface, and the sticky paper layer is slowly peeled off sapphire wafer to reach the purpose of slowly putting down sapphire wafer in the paster step.
The thickness of described sapphire wafer is 0.1 ~ 0.5mm.
The invention solves not scratch resistance of pad pasting and light transmission defective in the prior art, having widely, market economy is worth.
The specific embodiment
Embodiment one
A kind of sapphire pasting method may further comprise the steps:
The preparation of sapphire wafer becomes sapphire wafer with grinding and polishing process with the sapphire work piece cut by cutting;
Cleaning carries out dustlessization processing with sapphire wafer and surface of the work;
The paster step, utilize the vacuum principle that the sapphire paster is fitted tightly in surface of the work, drip operating fluid at the surface of the work middle part, clamp an end of sapphire wafer with hand or tweezers, the other end leans against on the surface of the work, makes sapphire wafer and surface of the work be miter angle, slowly puts down sapphire wafer, make sapphire wafer slowly contact operating fluid, thereby avoid occurring bubble.。
Homogenizing step if bubble occurs after the paster step is finished, then adds operating fluid in sapphire wafer one side, and opposite side is inhaled with absorbent paper, and bubble is displaced.
The thickness of described sapphire wafer is 0.1 ~ 0.5mm.
Embodiment two
Different from embodiment one is, a sticky paper layer is posted on described sapphire wafer surface, and the sticky paper layer is slowly peeled off sapphire wafer to reach the purpose of slowly putting down sapphire wafer in the paster step.

Claims (5)

1. sapphire pasting method is characterized in that this pasting method may further comprise the steps:
The preparation of sapphire wafer becomes sapphire wafer with grinding and polishing process with the sapphire work piece cut by cutting;
Cleaning carries out dustlessization processing with sapphire wafer and surface of the work;
The paster step utilizes the vacuum principle that the sapphire paster is fitted tightly in surface of the work.
2. sapphire pasting method according to claim 1 is characterized in that described pasting method also comprises:
Homogenizing step if bubble occurs after the paster step is finished, then adds operating fluid in sapphire wafer one side, and opposite side is inhaled with absorbent paper, and bubble is displaced.
3. sapphire pasting method according to claim 1 is characterized in that described paster step is:
Drip operating fluid at the surface of the work middle part, clamp an end of sapphire wafer with hand or tweezers, the other end leans against on the surface of the work, make sapphire wafer and surface of the work be miter angle, slowly put down sapphire wafer, make sapphire wafer slowly contact operating fluid, thereby avoid occurring bubble.
4. sapphire pasting method according to claim 3 is characterized in that described sapphire wafer surface posts a sticky paper layer, and the sticky paper layer is slowly peeled off sapphire wafer to reach the purpose of slowly putting down sapphire wafer in the paster step.
5. sapphire pasting method according to claim 1, the thickness that it is characterized in that described sapphire wafer is 0.1 ~ 0.5mm.
CN 201210408905 2012-10-24 2012-10-24 Sapphire sheet adhering method Pending CN102941938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201210408905 CN102941938A (en) 2012-10-24 2012-10-24 Sapphire sheet adhering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201210408905 CN102941938A (en) 2012-10-24 2012-10-24 Sapphire sheet adhering method

Publications (1)

Publication Number Publication Date
CN102941938A true CN102941938A (en) 2013-02-27

Family

ID=47724963

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201210408905 Pending CN102941938A (en) 2012-10-24 2012-10-24 Sapphire sheet adhering method

Country Status (1)

Country Link
CN (1) CN102941938A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105128158A (en) * 2015-08-17 2015-12-09 江苏吉星新材料有限公司 Patching method for large-dimension sapphire wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105128158A (en) * 2015-08-17 2015-12-09 江苏吉星新材料有限公司 Patching method for large-dimension sapphire wafers

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130227