CN102938554A - High-power adjustable clamping circuit for automobile jammer - Google Patents

High-power adjustable clamping circuit for automobile jammer Download PDF

Info

Publication number
CN102938554A
CN102938554A CN2011102335595A CN201110233559A CN102938554A CN 102938554 A CN102938554 A CN 102938554A CN 2011102335595 A CN2011102335595 A CN 2011102335595A CN 201110233559 A CN201110233559 A CN 201110233559A CN 102938554 A CN102938554 A CN 102938554A
Authority
CN
China
Prior art keywords
resistance
oxide
metal
comparator
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102335595A
Other languages
Chinese (zh)
Inventor
毛文斌
顾建军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHANGHAI PRIMA ELECTRONIC CO Ltd
Original Assignee
SHANGHAI PRIMA ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANGHAI PRIMA ELECTRONIC CO Ltd filed Critical SHANGHAI PRIMA ELECTRONIC CO Ltd
Priority to CN2011102335595A priority Critical patent/CN102938554A/en
Publication of CN102938554A publication Critical patent/CN102938554A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention relates to a high-power adjustable clamping circuit for an automobile jammer. The clamping circuit comprises a metal oxide semiconductor field effect transistor (MOSFET) drive module Us, an MOSFET Q1, a surge generator, a first resistance R1, a second resistance R2, a sampling resistance, a comparator, a triode Q2 and a given host, wherein the MOSFET Q1 is provided with a grid, a source and a drain, the grid is connected with the MOSFET drive module Us through the first resistance R1, the source is connected with the surge generator, and the drain is connected with the sampling resistance through the second resistance R2; the triode Q2 is provided with a base, a collector and an emitter, the base is connected with the comparator, the collector is connected between the MOSFET drive module Us and the first resistance R1, and the emitter is grounded; and the comparator is connected with the sampling resistance and the given host.

Description

The high-power adjustable clamping circuit that is used for the automobile interference unit
Technical field
The present invention relates to a kind of clamp circuit, especially relate to a kind of high-power adjustable clamping circuit for the automobile interference unit.
Background technology
Clamp circuit is application circuit more common in the EMC industry, mainly is that the amplitude clamp with waveform is set to the Set arbitrarily value, can be from 0V to Set arbitrarily several hectovolts, and can guarantee waveform stablizing on any amplitude, smoothly, do not have burr, and can keep for a long time.
Prior art is to utilize some voltage-stabilizing devices to carry out voltage stabilizing, and one is that parameter is single, can not realize multistage seamless link, if another high pressure surpasses the limiting voltage of voltage-stabiliser tube, voltage-stabiliser tube will be breakdown, causes wave distortion.In addition, the speed ratio of surge generator is very fast, and certain destructiveness is arranged, and it also is one of the problem that will consider that the how to do well protection is unlikely to damage device.
Summary of the invention
Purpose of the present invention is exactly to provide a kind of high-power adjustable clamping circuit for the automobile interference unit for the defective that overcomes above-mentioned prior art existence.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of high-power adjustable clamping circuit for the automobile interference unit is characterized in that, comprises metal-oxide-semiconductor driver module Us, metal-oxide-semiconductor Q1, surge generator, the first resistance R 1, the second resistance R 2, sampling resistor, comparator, triode Q2 and given main frame;
Described metal-oxide-semiconductor Q1 is provided with grid, source electrode, drain electrode, and its grid is connected with metal-oxide-semiconductor driver module Us by the first resistance R 1, and its source electrode is connected with surge generator, and its drain electrode is connected with sampling resistor by the second resistance R 2;
Described triode Q2 is provided with base stage, collector electrode, emitter, and its base stage is connected with comparator, and its collector electrode is connected between metal-oxide-semiconductor driver module Us and the first resistance R 1, its grounded emitter;
Described comparator is connected with sampling resistor, and described given main frame is connected with comparator.
Described metal-oxide-semiconductor Q1 is that a plurality of metal-oxide-semiconductors are formed in parallel.
Compared with prior art, the present invention has the following advantages:
1, can set free voltage, reach continuously adjustable.
2, can effectively accomplish high-power clamp, precision can control in the 0.5V, and without burr.
3, can do an integrated chip, as circuit brake, more obvious for some Millisecond broad pulse interference effects.
Description of drawings
Fig. 1 is structural representation of the present invention.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
Embodiment
As shown in Figure 1, a kind of high-power adjustable clamping circuit for the automobile interference unit comprises metal-oxide-semiconductor driver module Us, metal-oxide-semiconductor Q1, surge generator L, the first resistance R 1, the second resistance R 2, sampling resistor R, comparator B1, triode Q2 and given host B 2;
Described metal-oxide-semiconductor Q1 is provided with grid, source electrode, drain electrode, and its grid is connected with metal-oxide-semiconductor driver module Us by the first resistance R 1, and its source electrode is connected with surge generator L, and its drain electrode is connected with sampling resistor R by the second resistance R 2;
Described triode Q2 is provided with base stage, collector electrode, emitter, and its base stage is connected with comparator B1, and its collector electrode is connected between metal-oxide-semiconductor driver module Us and the first resistance R 1, its grounded emitter;
Described comparator B1 is connected with sampling resistor R, and described given host B 2 is connected with comparator B1.
Described metal-oxide-semiconductor Q1 is that a plurality of metal-oxide-semiconductors are formed in parallel, can be according to what of the energy quantification of electric current.The response time of control high-voltage control circuit is very fast at the nanosecond order of magnitude.Can make a response rapidly when having surge to flow through, protection device is unlikely to damage.
Operation principle: by sampling resistor, produce the small-signal feedback voltage.This feedback voltage is delivered to comparator, and feedback voltage compares with the given magnitude of voltage that given main frame sends again, turn-offs if equate then to control metal-oxide-semiconductor Q1, makes lower voltage, if on the low sidely metal-oxide-semiconductor Q1 is opened, Real Time Monitoring is controlled in real time so again.So can reach the function of voltage clamp, with the level of voltage stabilization a balance.

Claims (2)

1. a high-power adjustable clamping circuit that is used for the automobile interference unit is characterized in that, comprises metal-oxide-semiconductor driver module Us, metal-oxide-semiconductor Q1, surge generator, the first resistance R 1, the second resistance R 2, sampling resistor, comparator, triode Q2 and given main frame;
Described metal-oxide-semiconductor Q1 is provided with grid, source electrode, drain electrode, and its grid is connected with metal-oxide-semiconductor driver module Us by the first resistance R 1, and its source electrode is connected with surge generator, and its drain electrode is connected with sampling resistor by the second resistance R 2;
Described triode Q2 is provided with base stage, collector electrode, emitter, and its base stage is connected with comparator, and its collector electrode is connected between metal-oxide-semiconductor driver module Us and the first resistance R 1, its grounded emitter;
Described comparator is connected with sampling resistor, and described given main frame is connected with comparator.
2. a kind of high-power adjustable clamping circuit for the automobile interference unit according to claim 1 is characterized in that, described metal-oxide-semiconductor Q1 is that a plurality of metal-oxide-semiconductors are formed in parallel.
CN2011102335595A 2011-08-15 2011-08-15 High-power adjustable clamping circuit for automobile jammer Pending CN102938554A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011102335595A CN102938554A (en) 2011-08-15 2011-08-15 High-power adjustable clamping circuit for automobile jammer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011102335595A CN102938554A (en) 2011-08-15 2011-08-15 High-power adjustable clamping circuit for automobile jammer

Publications (1)

Publication Number Publication Date
CN102938554A true CN102938554A (en) 2013-02-20

Family

ID=47697434

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102335595A Pending CN102938554A (en) 2011-08-15 2011-08-15 High-power adjustable clamping circuit for automobile jammer

Country Status (1)

Country Link
CN (1) CN102938554A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1591115A (en) * 2003-08-29 2005-03-09 罗姆股份有限公司 Power supply apparatus
CN101056054A (en) * 2007-02-12 2007-10-17 深圳安凯微电子技术有限公司 DC-DC power conversion circuit
CN101123392A (en) * 2006-08-09 2008-02-13 矽创电子股份有限公司 Charge pump circuit without additional voltage stabilizer
CN101425755A (en) * 2008-09-18 2009-05-06 上海三基电子工业有限公司 Accurate voltage regulating and stabilizing device
CN201536253U (en) * 2009-09-18 2010-07-28 深圳市同洲电子股份有限公司 USB overcurrent detection and control circuit
CN202218197U (en) * 2011-08-15 2012-05-09 上海普锐马电子有限公司 High-power adjustable clamping circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1591115A (en) * 2003-08-29 2005-03-09 罗姆股份有限公司 Power supply apparatus
CN101123392A (en) * 2006-08-09 2008-02-13 矽创电子股份有限公司 Charge pump circuit without additional voltage stabilizer
CN101056054A (en) * 2007-02-12 2007-10-17 深圳安凯微电子技术有限公司 DC-DC power conversion circuit
CN101425755A (en) * 2008-09-18 2009-05-06 上海三基电子工业有限公司 Accurate voltage regulating and stabilizing device
CN201536253U (en) * 2009-09-18 2010-07-28 深圳市同洲电子股份有限公司 USB overcurrent detection and control circuit
CN202218197U (en) * 2011-08-15 2012-05-09 上海普锐马电子有限公司 High-power adjustable clamping circuit

Similar Documents

Publication Publication Date Title
CN104659757B (en) A kind of IGBT overvoltage crowbars and a kind of IGBT over-voltage protection methods
CN109495102B (en) SiC MOSFET class short-circuit current suppression circuit and method
CN103066809B (en) Improved residual current device (RCD) buffer circuit applied to direct tandem type insulated gate bipolar translator (IGBT)
CN109743054B (en) SiC MOSFET class II short-circuit current suppression circuit and method
CN107809171B (en) Switching power supply and driving method and driving circuit of power switching tube thereof
CN204906177U (en) IGBT turn -offs overvoltage active clamping circuit
CN106356823B (en) The surge protection circuit being integrated in chip
US9331188B2 (en) Short-circuit protection circuits, system, and method
CN104040890B (en) Device for controlling semiconductor switch device
CN107623512B (en) Active Miller clamping protection circuit
JP5254386B2 (en) Gate drive circuit and power semiconductor module
CN102064681B (en) Switch power supply output overvoltage protection circuit
CN202330630U (en) Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube
CN104868891A (en) Level Declining Circuit And High Voltage-side Short Circuit Protection Circuit
US9490794B1 (en) Dynamic shutdown protection circuit
CN203722596U (en) A high-frequency anti-interference MOS tube negative voltage driving circuit
CN202218197U (en) High-power adjustable clamping circuit
CN105337479B (en) A kind of gate protection circuit of IGBT driving
CN104158385B (en) Gate pole absorbs suppression circuit module
CN104578025A (en) Overvoltage protection circuit for high-voltage integrated circuit
CN102938554A (en) High-power adjustable clamping circuit for automobile jammer
CN103326344B (en) A kind of overvoltage limiting circuit
CN211791241U (en) Drive circuit, booster circuit and air conditioner
CN103684369A (en) Active clamp for semiconductor switch
CN104519645B (en) A kind of guide-lighting drive circuit based on PWM light modulation

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20130220