CN102938369B - Epitaxial growth preprocess method and epitaxial growth pretreating process chamber - Google Patents
Epitaxial growth preprocess method and epitaxial growth pretreating process chamber Download PDFInfo
- Publication number
- CN102938369B CN102938369B CN201210484714.5A CN201210484714A CN102938369B CN 102938369 B CN102938369 B CN 102938369B CN 201210484714 A CN201210484714 A CN 201210484714A CN 102938369 B CN102938369 B CN 102938369B
- Authority
- CN
- China
- Prior art keywords
- epitaxial growth
- substrate
- laser
- preprocess method
- process cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of epitaxial growth preprocess method and epitaxial growth pretreating process chamber, for solving in existing epitaxial growth pretreating process, adopt heating means remove impurity on substrate surface the problem such as quality surface, complex operation with coming product and designing.Described epitaxial growth preprocess method irradiates substrate, to make epitaxially grown surperficial local heating needed for described substrate temperature required to epitaxial growth preliminary treatment for using laser; Wherein, described substrate is arranged in reducibility gas.Described epitaxial growth pretreating process chamber, comprises process cavity; Described process cavity is provided with air inlet, gas outlet and the laser aid for irradiating the substrate being positioned at described process cavity.Epitaxial growth preprocess method of the present invention and epitaxial growth pretreating process chamber have easy and simple to handle, quick, the guaranteed feature of product quality.
Description
Technical field
The present invention relates to method for semiconductor manufacturing and making apparatus, particularly relate to a kind of epitaxial growth preprocess method and epitaxial growth pretreating process chamber.
Background technology
In micro-electronic manufacturing, epitaxial growth is a kind of important single-step process technology.Epitaxial growth will be arranged by the extension that atom is outwards strictly orderly on the surface of original material and substrate, and obtain certain thickness epitaxial material, thus the relevant design requirement such as the resistance met needed for device or circuit design or thickness.
If the material extended is all homoepitaxy mutually with original backing material, if difference, is heteroepitaxy.In epitaxial process, require that substrate surface atomic arrangement is identical with the arranging situation of interior atoms, ductile like this growth can be carried out smoothly, and the material grown out can keep the ordered arrangement identical with interior atoms.
Because the surface of substrate is adsorbed with more impurity usually, different all from substrate interior of the kind of surface atom and arrangement mode, therefore the preliminary treatment such as surperficial removal of impurities and specification atomic arrangement must be carried out before carrying out epitaxial growth.
The process for surface preparation of existing substrate comprises the following steps:
1: high temperature is applied to substrate wafer sheet, is generally about 1000 DEG C;
2: pass into high-purity hydrogen (reducing atmosphere), make the chemical bond rupture between surface impurity atom and silicon atom or remove and adsorb;
3: foreign atom enters in atmosphere and is discharged, surface silicon atoms recovers ordered arrangement.Wherein the dangling bonds of the silicon atom on section substrate surface are matched by hydrogen atom.
Said method has the following disadvantages:
1: the whole substrate of high-temperature heating, easily cause surface impurity to spread to substrate interior, thus affect the quality of final products;
2: the whole substrate of high-temperature heating, extra configuration preliminary treatment chamber is needed in actual mechanical process, and described surface preparation chamber domestic demand arranges the heater that high-temperature heating can be provided to thousands of degree, the cavity of process cavity needs high temperature resistant, thus process cavity design difficulty is large;
3: high-temperature heating substrate, complex operation, efficiency is lower.
Summary of the invention
For overcoming the problems referred to above, the invention provides one and do not need elevated temperature heating stage, substrate entirety can complete at a lower temperature and surface impurity can not be caused because integral high-temperature is to substrate interior diffusion, equipment de-sign epitaxial growth preprocess method simple, simple for production and epitaxial growth pretreating process chamber.
For reaching above-mentioned purpose, epitaxial growth preprocess method of the present invention irradiates substrate, to make epitaxially grown surperficial local heating needed for described substrate temperature required to epitaxial growth preliminary treatment for using laser;
Wherein, described substrate is arranged in reducibility gas.
Further, described epitaxial growth preprocess method comprises following concrete steps:
Step 1: substrate is placed in process cavity;
Step 2: described process cavity is vacuumized;
Step 3: be filled with reducibility gas to process cavity;
Step 4: irradiate substrate with laser.
Further, the reduction air pressure that described process cavity is formed after being filled with reducibility gas is less than atmospheric pressure.
Further, described reduction air pressure size is 0.5-0.9 standard atmospheric pressure.
Further, the wavelength of described laser is 248nm-1um.
Further, the spot size of described laser is 1 square millimeter to 1 square centimeter; The power of described laser is 10W-100W.
For reaching above-mentioned purpose, epitaxial growth pretreating process chamber of the present invention, comprises process cavity; Described technique body cavity is provided with air inlet and gas outlet, and described epitaxial growth pretreating process chamber also comprises one for irradiating the laser aid of the substrate being positioned at described cavity.
Preferably, described laser aid comprises the driving of the generating laser connected successively, the light-conducting arm that can swing and light-conducting arm.
Preferably, described generating laser and described light-conducting arm are positioned at the outside of described process cavity; Described cavity is provided with the transparency window injected for laser.
Preferably, described generating laser is positioned at the outside of described process cavity, and described light-conducting arm part is positioned at described process cavity.
The beneficial effect in epitaxial growth preprocess method of the present invention and epitaxial growth pretreating process chamber:
Epitaxial growth preprocess method of the present invention and epitaxial growth pretreating process chamber, adopt laser irradiation substrate to carry out epitaxially grown surface to needs and carry out local heating methods, replace the high-temperature heating to substrate entirety in conventional method, for the chemical reaction in reducing atmosphere and the desorption between impurity and substrate atoms or chemical bond rupture provide energy.Have the following advantages:
1: relative to traditional handicraft, substrate of the present invention only produces high temperature in local, needs epitaxially grown surface, substrate entirety can not produce high temperature, avoid the impurity of whole substrate surface, especially do not need the diffusion phenomena of the impurity of epitaxial growth side to aggravate, thus avoid Yin Gaowen and cause impurity to spread the problem of the poor product quality caused to substrate interior;
2: do not need high-temperature heating, preprocess method process cavity used can be high temperature resistant and do not need to arrange the high-temperature heating equipment that can provide thousands of degree, therefore reduce the design difficulty of process cavity, saves equipment cost, simplifies production equipment.
3: avoid complex operation, time long high-temperature heating, replace with simply, efficiently laser irradiate, simple to operate, realize convenient.
Accompanying drawing explanation
Fig. 1 is the flow chart described in epitaxial growth preprocess method embodiment two of the present invention;
Fig. 2 is the structural representation described in the embodiment of epitaxial growth pretreating process chamber second of the present invention;
Fig. 3 is the structural representation described in the embodiment of epitaxial growth pretreating process chamber the 4th of the present invention.
Embodiment
The invention provides a kind of epitaxial growth preprocess method and epitaxial growth pretreating process chamber thereof, the impurity adopting high-temperature heating to cause to solve existing epitaxial growth preprocess method spreads to substrate interior, needs the problems such as resistant to elevated temperatures pretreating process chamber, complex operation and design, and overall thinking is as follows:
Epitaxial growth preprocess method described in any embodiment of the present invention is irradiate with laser the substrate being placed in reducibility gas.Substrate is placed in reducibility gas, localized heating substrate is irradiated with laser, needing to carry out epitaxially grown surface to make substrate is warming up to temperature required, thus carry out redox reaction for the impurity of reducibility gas and substrate surface, as foreign atom provides energy as O oxygen atom etc. with the chemical bond rupture of substrate as the silicon atom in wafer, instead of the method to the heating of substrate entirety in conventional method.
First, adopt epitaxial growth preprocess method of the present invention, substrate entirety can not produce high temperature, therefore the diffusion phenomena of molecule or atom can not be aggravated, therefore it is as bad because pretreated high-temperature heating internally spreads the quality caused in the impurity in the impurity of wafer surface or atmosphere to avoid substrate;
Secondly, the present invention adopts laser to irradiate to replace high-temperature heating, does not need to arrange energy consumption is large, technological requirement is high high-temperature heating equipment and reduces the resistant to elevated temperatures requirement of process cavity, simplifying equipment structure.
Again, the present invention adopts laser to irradiate to get localized heating and replaces the heating of traditional integral high-temperature, operates easier, saves the time being warming up to preset temperature, save the time in Replacement procedure chamber simultaneously, so improve production efficiency.
Epitaxial growth pretreating process chamber described in any embodiment of the present invention, comprises cavity; Described work cavity is provided with air inlet and gas outlet, and described epitaxial growth pretreating process chamber also comprises one for irradiating the laser aid of the substrate being positioned at described cavity.
The present invention is on the basis of original epitaxial growth equipment, add the laser aid irradiating substrate, the equipment of realization is provided for laser irradiates, simplify equipment structure, substrate entirety can not produce high temperature, avoid the phenomenon that high temperature causes impurity to spread to substrate interior, ensure that the quality of product.
Below in conjunction with Figure of description, the present invention will be further described.
Embodiment one:
Epitaxial growth preprocess method described in the present embodiment, first substrate is needed to be placed in the reducibility gas of high concentration, irradiate with laser again and need to carry out the surface corresponding to epitaxially grown substrate, need to make described substrate to carry out the temperature needed for epitaxially grown surperficial local heating to epitaxial growth preliminary treatment.Local laser heated substrate is to temperature required and then provide required energy for the redox reaction of reducing gas.Thus make the chemical bond rupture between the foreign atom of substrate surface and substrate or remove substrate to the absorption of foreign atom.Thus complete the pretreated removal of impurities effect of epitaxial growth.
In concrete implementation process, first substrate can be put into process cavity, after vacuumizing, in process cavity, pass into reducibility gas again.
Localized heating substrate is irradiated with laser in the present embodiment, compare and traditional handicraft, the impurity of substrate surface can not spread to substrate interior, can ensure the quality of product, meanwhile easy and simple to handle, and can share a process cavity with epitaxially grown subsequent step.
Embodiment two:
As shown in Figure 1, the epitaxial growth preprocess method described in the present embodiment comprises following concrete steps:
Step 1: substrate is placed in process cavity;
Step 2: described process cavity is vacuumized;
Step 3: be filled with reducibility gas in process cavity;
Step 4: irradiate substrate with laser.
First substrate is placed in process cavity by the present embodiment, then process cavity is vacuumized, again reducibility gas is filled with to process cavity, the high concentration in process cavity and the high-purity of reducibility gas can be ensured like this, to prevent from having in process cavity air reacting with substrate as oxygen etc. under laser irradiates in air, thus affect epitaxially grown effect.
In concrete implementation process, also first can vacuumize process cavity, be filled with reducibility gas, again substrate put into process cavity or first vacuumize, put into substrate, be filled with reducibility gas to process cavity again, only needing to ensure that substrate is finally arranged in reducibility gas.The present embodiment has preferentially been selected and substrate has first been put into process cavity, has then vacuumized process cavity, has been filled with reducibility gas to process cavity again, such operation is easier, the leakage of vacuum failure or reducibility gas or air penetration will be caused to enter the problem of process cavity because of misoperation when putting into substrate, thus ensure again that the pretreated effect of epitaxial growth.
Sum up above-mentioned, the epitaxial growth preprocess method described in the present embodiment, first adds the step vacuumized, more dually the order that each step is implemented ensure that the effect that epitaxial growth preliminary treatment is final, has effective, the feature be easy to implement.
Embodiment three:
On the basis of described embodiment two, the present embodiment epitaxial growth preprocess method, in described step 3 after complete being filled with of reducibility gas to process cavity, the reduction air pressure that described process cavity is formed after being filled with reducibility gas is less than atmospheric pressure.The reduction air pressure that preferred described reducibility gas produces is 0.5-0.9 atmospheric pressure.And the reproducibility air pressure in the present embodiment in described epitaxial growth preprocess method is 0.8 atmospheric pressure.
Air pressure is lower, and the temperature needed for preliminary treatment is lower, and if silicon wafer is 760Torr at atmospheric pressure, silicon wafer must be heated to 1070 DEG C to discharge natural oxide; Air pressure is reduced to 76Torr, and pretreatment temperature is just reduced to 980 DEG C.Therefore the pressure of reducibility gas is less than atmospheric pressure, further reduce the temperature of substrate surface, further decrease the phenomenon that impurity that high temperature causes inwardly spreads, further improve the quality of product.In addition in order to ensure reaction rate and reducibility gas concentration, therefore reproducibility air pressure can not be too little, and 0.5-0.9 atmospheric pressure described in the present embodiment, while ensure that reaction rate and reducibility gas concentration, reduce reproducibility air pressure thus while reducing manufacturing technique requirent, ensure that the high-quality of product.
Embodiment four:
The present embodiment epitaxial growth preprocess method is irradiate with the laser of wavelength 248nm-1um the substrate being placed in reducibility gas.
Laser irradiates and makes the degree of depth of substrate local heating relevant to the wavelength of laser, adopts the laser of the wavelength of 248nm-1um can meet the scope of the required intensification of substrate.
Embodiment five:
The present embodiment, on the basis of above-mentioned any embodiment, further sets the size of the hot spot of laser when laser irradiates.The size of described hot spot preferably 1 square millimeter to 1 square centimeter.In concrete implementation process, the size of the hot spot that can be formed according to Emission Lasers selects laser aid.Hot spot is set in 1 square millimeter to 1 square centimeter can meet the epitaxially grown needs of Most electronic device as wafer.When the area of wafer is larger, laser can be moved and scanning is carried out to wafer irradiate.
As the further improvement of the present embodiment, the preferred 10W-100W of merit degree of described laser, the laser preparation of this power is easy to simultaneously, to make the temperature that substrate is as required in silicon wafer is warming up to rapidly.
First embodiment:
The present embodiment epitaxial growth pretreating process chamber, comprises process cavity; Described process cavity is provided with air inlet and gas outlet, and described epitaxial growth equipment also comprises one for irradiating the laser aid of the substrate being positioned at described process cavity.Described air inlet is used for being filled with reducibility gas in process cavity.Usually described reducibility gas is hydrogen.Described gas outlet has been applied to leaving of the pretreated gas of epitaxial growth, and the foreign atom containing gasification in reacted reducibility gas or fog, this reducibility gas plays an effect transported by impurity simultaneously.Gas outlet is also applied to the gas of finding time in process cavity, and below can arrange aspiration pump, as vacuum pump.
Described laser aid is positioned at the substrate of cavity for irradiating.This equipment instead of heater in conventional epitaxial growth preliminary treatment by arranging laser aid, make epitaxial growth preliminary treatment easier, more convenient to operate, and this process cavity can also be used in epitaxially grown subsequent treatment.Because employing laser aid instead of the heater in the middle of legacy equipment, carrying out in the pretreated process of epitaxial growth, the temperature of described substrate entirety does not significantly raise, thus the diffusion aggravation that the impurity of substrate surface also can not be formed because of high temperature causes impurity motion internally, thus ensure that the quality of product.
Second embodiment:
As shown in Figure 2, the present embodiment epitaxial growth pretreating process chamber, comprises process cavity 1; Described process cavity 1 is provided with air inlet 2 and gas outlet 3, and described epitaxial growth equipment also comprises one for irradiating the laser aid of the substrate being positioned at described process cavity and described process cavity 1.Described laser aid comprises the driving of the generating laser connected successively, the light-conducting arm 6 that can swing and light-conducting arm.Described light-conducting arm 6 is positioned at outside described process cavity; Described process cavity is provided with the transparency window 5 injected for laser.Wherein described in figure 7 is substrate, and 4 is plummer.
In concrete implementation process, described substrate 7 is placed on plummer 4, laser transmitter projects laser, is penetrated by light-conducting arm 6, and laser light transparency window 5, is irradiated on substrate.Laser centrality is high, usual hot spot is less, in the process of irradiating, under the driving that described light-conducting arm 6 drives at light-conducting arm, motion all around, two-dimensional scan substrate is evenly subject to laser irradiation to make carrying out epitaxially grown each part needed for substrate, completes epitaxial growth preliminary treatment with high-quality.
3rd embodiment:
On the basis of the second embodiment, epitaxial growth pretreating process chamber described in the present embodiment also comprises laser beam expanding parts and even bundle parts.The described parts that expand comprise as mirror with a tight waist etc.Can the hot spot of expansion of laser light by expanding, even bundle parts can ensure the consistency of the light intensity of hot spot various piece.Described parts and the even bundle parts of expanding all between described laser beam emitting device and light-conducting arm, or between light-conducting arm and process cavity.The laser of described laser beam can be continuous print laser also can be pulse.
4th embodiment:
As shown in Figure 3, the present embodiment epitaxial growth pretreating process chamber, comprises process cavity 1; Described process cavity 1 is provided with air inlet 2 and gas outlet 3, and described epitaxial growth pretreating process chamber also comprises one for irradiating the laser aid of the substrate being positioned at described cavity.Described laser aid comprises the generating laser connected successively, the light-conducting arm 8 that can swing and light-conducting arm and drives.Described generating laser is positioned at the outside of described cavity, and described light-conducting arm 8 part is positioned at described process cavity.Described light-conducting arm 8 part is positioned at process cavity and drives two dimensional motion scanning left under as the driving of motor to irradiate larger substrate all around at light-conducting arm.
Process cavity described in the present embodiment simplifies equipment, saves equipment cost, operates easier, quick, improves production efficiency.
Above; be only preferred embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, the protection range that protection scope of the present invention should define with claim is as the criterion.
Claims (3)
1. an epitaxial growth preprocess method, is characterized in that, described epitaxial growth preprocess method irradiates substrate surface, to make epitaxially grown surperficial local heating needed for described substrate temperature required to epitaxial growth preliminary treatment for using laser;
Wherein, described substrate is arranged in reducibility gas;
Described epitaxial growth preprocess method comprises following concrete steps:
Step 1: substrate is placed in process cavity;
Step 2: described process cavity is vacuumized;
Step 3: be filled with reducibility gas to process cavity, described reducibility gas is hydrogen;
Step 4: laser irradiates the oxide layer of substrate surface, laser irradiates localized heating substrate;
The reduction air pressure that described process cavity is formed after being filled with reducibility gas is less than atmospheric pressure;
Described reduction air pressure size is 0.5-0.9 standard atmospheric pressure.
2. epitaxial growth preprocess method according to claim 1, is characterized in that, the wavelength of described laser is 248nm-1um.
3. epitaxial growth preprocess method according to claim 1, is characterized in that, the spot size of described laser is 1 square millimeter to 1 square centimeter; The power of described laser is 10W-100W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210484714.5A CN102938369B (en) | 2012-11-23 | 2012-11-23 | Epitaxial growth preprocess method and epitaxial growth pretreating process chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210484714.5A CN102938369B (en) | 2012-11-23 | 2012-11-23 | Epitaxial growth preprocess method and epitaxial growth pretreating process chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102938369A CN102938369A (en) | 2013-02-20 |
| CN102938369B true CN102938369B (en) | 2016-04-13 |
Family
ID=47697259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210484714.5A Active CN102938369B (en) | 2012-11-23 | 2012-11-23 | Epitaxial growth preprocess method and epitaxial growth pretreating process chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102938369B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128978A (en) * | 2016-07-21 | 2016-11-16 | 无锡宏纳科技有限公司 | The device of ic manufacturing process can be checked |
| CN111364019A (en) * | 2020-04-13 | 2020-07-03 | 艾华(无锡)半导体科技有限公司 | Graphical epitaxial growth equipment structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005372A (en) * | 2009-08-31 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN102169810A (en) * | 2010-12-27 | 2011-08-31 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100068898A1 (en) * | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
-
2012
- 2012-11-23 CN CN201210484714.5A patent/CN102938369B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005372A (en) * | 2009-08-31 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN102169810A (en) * | 2010-12-27 | 2011-08-31 | 清华大学 | Laser processing apparatus using vacuum cavity and processing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications;Hui Bi et.al;《Journal of Materials Chemistry》;20111103;411-416 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102938369A (en) | 2013-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103121670B (en) | Method for low-temperature growth of graphene by remote plasma reinforced atomic layer deposition | |
| CN1339072A (en) | Tungsten doped crucible and method for preparing same | |
| CN102938369B (en) | Epitaxial growth preprocess method and epitaxial growth pretreating process chamber | |
| CN104736477B (en) | The manufacture method of nano-carbon film and nano-carbon film | |
| CN104498894B (en) | Preparation method of porous diamond film | |
| CN104498897B (en) | A kind of preparation method of carborundum films | |
| CN113782639A (en) | PECVD process for reducing EL (electro-deposition) plating contamination of crystalline silicon solar cell | |
| JP2021106278A (en) | Method for cleaning semiconductor manufacturing device component having gas hole | |
| CN106744898A (en) | A kind of modifies three-dimensional grapheme powder of nitrogen plasma and its preparation and application | |
| CN107699955A (en) | It is a kind of using microwave heat remove single-crystal silicon carbide defect in and surface organic impurities method | |
| CN102169810B (en) | Laser processing apparatus using vacuum cavity and processing method thereof | |
| JP2011084009A (en) | Laminate device, article processing apparatus, and method for manufacturing solar cell panel | |
| CN113998694B (en) | Preparation method for obtaining large-size graphene by using solid carbon source | |
| CN103094410A (en) | Phosphorous diffusion control method used for solar cell silicon slices | |
| CN113223928B (en) | Gallium oxide epitaxial growth method based on transfer bonding | |
| CN114349321A (en) | Vacuum diffusion welding equipment for high-light-transmittance borosilicate glass and using method thereof | |
| CN104851948B (en) | Method for preparing Gamma-CuI nanowire | |
| CN110408911B (en) | Controllable preparation device and method for large-area thin film | |
| CN112853321A (en) | ALD processing equipment and processing method | |
| CN109638106A (en) | A kind of method and device in solar cell substrate surface growth microcrystal silicon | |
| KR101122121B1 (en) | Laminating method for manufacturing solar cell module | |
| CN106653886A (en) | GaAs surface morphology control method | |
| CN112309815A (en) | Recovery method for MOCVD system for producing LED epitaxial wafer after maintenance | |
| CN116247131B (en) | Method for reducing conversion efficiency attenuation of solar cell | |
| CN110491993A (en) | A kind of preparation method and its display device of PI substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |