Summary of the invention
The invention provides a kind of light intensity detection circuit and method, in order to be implemented under the high-temperature condition, detect exactly intensity signal.
The invention provides a kind of light intensity detection circuit, comprising:
Illuminant module, one end connects reference voltage end, be used for producing under the excitation of illumination the electric current of the described illuminant module of flowing through, described illuminant module comprises the photoelectric conversion component that two more parallels connect, and the sense of current that described photoelectric conversion component produces is incomplete same;
Voltage detection module is connected with the other end of described illuminant module, and for detection of the voltage at described illuminant module two ends, there are mapping relations in the intensity signal of described voltage and described illumination;
The intensity signal acquisition module is used for according to described voltage, obtains the intensity signal of described illumination;
Wherein, described illuminant module, described voltage detection module and described intensity signal acquisition module are integrated in the single integrated circuit.
The present invention also provides a kind of light intensity detection method, comprising:
Pass through illuminant module, under the excitation of illumination, produce the electric current of the described illuminant module of flowing through, wherein, one end of described illuminant module connects reference voltage end, described illuminant module comprises the photoelectric conversion component that two more parallels connect, and the sense of current that described photoelectric conversion component produces is incomplete same;
Detect the voltage at described illuminant module two ends, there are mapping relations in the intensity signal of described voltage and described illumination;
According to described voltage, obtain the intensity signal of described illumination;
Above-mentioned in single integrated circuit, finish in steps.
In the present invention, illuminant module produces the electric current of the illuminant module of flowing through under the excitation of illumination, voltage detection module detects the voltage at illuminant module two ends, there are mapping relations in the value of voltage and the light intensity of illumination, therefore the intensity signal acquisition module obtains the intensity signal of illumination according to voltage, because the sense of current that the photoelectric conversion component in the illuminant module produces is incomplete same, at high temperature and unglazed according under the condition, even the electric current that each photoelectric conversion component itself produces is very large, but because the sense of current that each photoelectric conversion component produces is different, the electric current of the different directions part of can cancelling out each other, thereby can balance out temperature to the influence of peak current, so that the electric current of illuminant module integral body is subjected to the impact of temperature less, therefore the light intensity detection circuit of present embodiment still can detect intensity signal exactly under high-temperature condition.
Embodiment
The invention will be further described below in conjunction with specification drawings and specific embodiments.
As shown in Figure 2, structural representation for light intensity detection circuit the first embodiment of the present invention, this light intensity detection circuit can comprise illuminant module 21, voltage detection module 22 and intensity signal acquisition module 23, wherein, one end of illuminant module 21 connects reference voltage end, the other end is connected with voltage detection module 22, and intensity signal acquisition module 23 is connected with voltage detection module 22.Illuminant module 21 comprises photoelectric conversion component 211 ~ 21n that two more parallels connect, and wherein, n is the natural number more than or equal to 2.Illuminant module 21, voltage detection module 22 and intensity signal acquisition module 23 are integrated in the single integrated circuit, and this integrated circuit can be constructed to adopt complementary metal oxide semiconductor (CMOS) (CMOS) technique, BiCMOS technique or any other to want the technique that adopts or the combination of technique to make.
In the present embodiment, illuminant module 21 is used for producing the electric current of the illuminant module 21 of flowing through under the excitation of illumination, the sense of current that photoelectric conversion component 211 ~ 21n in the illuminant module 21 produces is incomplete same, for example: the electric current that photoelectric conversion component 211 produces flows to reference voltage end from voltage detection module 22, and the electric current that photoelectric conversion component 21n produces flows to voltage detection module 22 from reference voltage end; Voltage detection module 22 is for detection of the voltage V at illuminant module 21 two ends, and there are mapping relations in the intensity signal of voltage V and illumination, need to prove the voltage at voltage detection module 22 direct-detection illuminant modules 21 two ends; Intensity signal acquisition module 23 is used for according to voltage V, obtains the intensity signal of illumination.
The principle of work of present embodiment is as follows: illuminant module 21 produces the electric current of the illuminant module 21 of flowing through under the excitation of illumination, voltage detection module 22 detects the voltage V at illuminant module 21 two ends, there are mapping relations in the value of voltage V and the light intensity of illumination, therefore intensity signal acquisition module 23 obtains the intensity signal of illumination according to voltage V, because the sense of current that the photoelectric conversion component 211 ~ 21n in the illuminant module 21 produces is incomplete same, at high temperature and unglazed according under the condition, even the electric current that each photoelectric conversion component itself produces is very large, but because the sense of current that each photoelectric conversion component produces is different, the electric current of the different directions part of can cancelling out each other, thereby can balance out temperature to the influence of peak current, so that the electric current of illuminant module 21 integral body is subjected to the impact of temperature less, therefore the light intensity detection circuit of present embodiment still can detect intensity signal exactly under high-temperature condition.
In addition, present embodiment adopts integrated circuit to realize that cost is lower.Present embodiment is simple in structure, and power consumption is lower, can be widely used in Low Power Consumption Portable equipment, and for example: the anti-light that can be used as smart card is attacked sensor.
Further, in the present embodiment, photoelectric conversion component 211 ~ 21n can be the assembly of electric energy with transform light energy for photodiode or other are any.In addition, intensity signal acquisition module 23 is specifically as follows analog to digital converter, and analog to digital converter quantizes voltage, just can know the intensity signal of illumination; Perhaps, intensity signal acquisition module 23 can also be a simple comparer, an input end of comparer is the voltage that voltage detection module 22 detects, another input end is predetermined reference voltage threshold, comparer compares the two, determine the intensity signal of illumination according to comparative result, this intensity signal can be used to indicate whether there is illumination.
As shown in Figure 3, for the structural representation of light intensity detection circuit the second embodiment of the present invention, on the basis of a upper embodiment, n=2, photoelectric conversion component are photodiode D1 and D2, and reference voltage end is common.
Photodiode D1 can be the diode measure-alike, that type is different with D2, also can be the diode that size is different, type is identical.For example: photodiode D1 is p+_n trap type diode, and photodiode D2 is n+_p trap type diode.The negative pole of the positive pole of photodiode D1 and photodiode D2 is connected to the input end of voltage detection module 22; The positive pole of the negative pole of photodiode D1 and photodiode D2 is connected to common.
The principle of work of present embodiment is as follows: do not having do not have electric current to flow through on photodiode D1 and the D2 in the situation of illumination, voltage V=0.As shown in Figure 4, for illuminant module among light intensity detection circuit the second embodiment of the present invention at the schematic equivalent circuit that has under the illumination condition, when illumination is arranged, photoelectric effect according to photodiode, photodiode D1 can equivalence be a constant current source and one not by the parallel connection of the diode of illumination, the size of current of constant current source is I
Sc1, relevant with the intensity of the photoelectric characteristic of photodiode D1 itself and current illumination; Not by the electric current I on the diode of illumination
Dsrk1And satisfy following relation: I between the voltage V
Dsrk1=I
O1(e
QV/kT-1), wherein, I
O1Be the saturation current of photodiode D1, q is electron charge, and k is Boltzmann constant, and T is absolute temperature.In like manner, when illumination is arranged, photodiode D2 also equivalence be a constant current source and one not by the parallel connection of the diode of illumination, the size of current of constant current source is I
Sc2,Relevant with the intensity of the photoelectric characteristic of photodiode D2 itself and current illumination; Not by the electric current I on the diode of illumination
Dsrk2And satisfy following relation: I between the voltage V
Dsrk2=I
O2(e
-qV/kT-1), wherein, I
O2Be the saturation current of photodiode D2, q is electron charge, and k is Boltzmann constant, and T is absolute temperature.According to Kirchhoff's current law (KCL), there is following relation: I
Sc1+ I
Dsrk2=I
Sc2+ I
Dsrk1, also be Isc1+Io2 (e-
QV/kT-1)=I
Sc2+ I
O2(e
QV/kT-1), because photodiode D1 is different diodes with D2, so I
Sc1≠ I
Sc2, work as I
Sc1>I
Sc2The time, can obtain voltage V〉0, work as I
Sc1<I
Sc2The time, can obtain voltage V<0; And have mapping relations between voltage V and the light intensity, intensity signal acquisition module 23 just can obtain intensity signal according to the value of voltage V.
As shown in Figure 5, be the structural representation of invention light intensity detection circuit the 3rd embodiment, be with the difference of a upper embodiment that the negative pole of photodiode D1 is connected positive pole and is connected DC voltage V1 with photodiode D2.When not having illumination, the voltage V2=V1 of the input end of voltage detecting circuit 22, at this moment, the voltage V=0 at illuminant module 21 two ends; When illumination is arranged, V2 ≠ V1, at this moment, the voltage V at illuminant module 21 two ends ≠ 0; And along with light intensity is different, the value of voltage V is also different, and intensity signal acquisition module 23 just can obtain intensity signal according to the value of voltage V.
As shown in Figure 6, the schematic flow sheet for light intensity detection method the first embodiment of the present invention can comprise the steps:
Step 61, by illuminant module, under the excitation of illumination, produce the electric current of the illuminant module of flowing through;
Wherein, illuminant module is specifically as follows the illuminant module 21 of Fig. 2, Fig. 3 or structural representation shown in Figure 4, does not repeat them here;
The voltage at step 62, detection illuminant module two ends, there are mapping relations in the intensity signal of this voltage and illumination;
This step can be finished by the voltage detection module 22 in the structural representation shown in Figure 2;
Step 63, according to voltage, obtain the intensity signal of illumination;
This step can be finished by the intensity signal acquisition module 23 in the structural representation shown in Figure 2.
Step 61-step 63 is finished in single integrated circuit.This integrated circuit adopts complementary metal oxide semiconductor (CMOS) (CMOS) technique, BiCMOS technique or any other to want the technique that adopts or the combination of technique to make.
In the present embodiment, at first under the excitation of illumination, produce the electric current of the illuminant module of flowing through by illuminant module 21, then detect the voltage at illuminant module two ends, at last obtain the intensity signal of illumination according to this voltage, because the sense of current that the photoelectric conversion component 211 ~ 21n in the illuminant module 21 produces is incomplete same, at high temperature and unglazed according under the condition, even the electric current that each photoelectric conversion component itself produces is very large, but because the sense of current that each photoelectric conversion component produces is different, the electric current of the different directions part of can cancelling out each other, thereby can balance out temperature to the influence of peak current, so that the electric current of illuminant module 21 integral body is subjected to the impact of temperature less, therefore the light intensity detection circuit of present embodiment still can detect intensity signal exactly under high-temperature condition.
As shown in Figure 7, be the schematic flow sheet of light intensity detection method the second embodiment of the present invention, be that with the difference of schematic flow sheet shown in Figure 6 step 63 is specifically as follows following steps:
Step 71, voltage is carried out analog-to-digital conversion process, obtain the intensity signal of illumination;
This step can be finished by analog to digital converter.
As shown in Figure 8, be the schematic flow sheet of intensity detection method the 3rd embodiment of the present invention, be that with the difference of schematic flow sheet shown in Figure 6 step 63 is specifically as follows following steps:
Step 81, voltage and predetermined threshold are compared, determine the intensity signal of illumination according to comparative result;
This step can be finished by comparer.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although with reference to preferred embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.