CN102936720A - Atomic layer deposition device and process of low pressure hot wall intensive mounting sheet - Google Patents
Atomic layer deposition device and process of low pressure hot wall intensive mounting sheet Download PDFInfo
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- CN102936720A CN102936720A CN2012104575668A CN201210457566A CN102936720A CN 102936720 A CN102936720 A CN 102936720A CN 2012104575668 A CN2012104575668 A CN 2012104575668A CN 201210457566 A CN201210457566 A CN 201210457566A CN 102936720 A CN102936720 A CN 102936720A
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- reaction tubes
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- substrate slice
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Abstract
The invention relates to an atomic layer deposition device and a process of a low pressure hot wall intensive mounting sheet. The device comprises a reaction combination gas alternating pulse gas source, a low pressure reaction furnace tube, a heating furnace set, an intensive mounting sheet group which is perpendicular to the direction of air current and a substrate slice support. According to the atomic layer deposition device and the process of the low pressure hot wall intensive mounting sheet, by means of vortex of low-pressure gases and self-limitation growth of atomic layer deposition, atomic layer deposition of films which are large-batch, cheap and uniform can be achieved.
Description
Technical field
The present invention relates to a kind of atomic layer level thin film deposition apparatus and technique, particularly the intensive load atomic layer deposition apparatus of a kind of low pressure hot wall and technique belong to thin-film deposition and Application Areas.
Background technology
Conventional atomic layer deposition (Atomic Layer Deposition is called for short ALD) equipment and process is a kind of technology by the gas-solid reaction deposition film.Wherein the process of growth of each step deposition film all is from limiting.Its maximum characteristics are that each step is only grown or adsorbed a monoatomic layer [1].Therefore atomic layer deposition apparatus and technique all have obvious advantage at the aspects such as homogeneity, thickness and film composition of control film.But the production lot of atomic layer deposition is little and cost is high, becomes the biggest obstacle in the actual use.
The conventional intensive load chemical vapor deposition of low pressure hot wall (Low Pressure Chemical Vapor Deposition is called for short LPCVD) equipment and process also is a kind of technology by the gas-solid reaction deposition film.Its feature is to adopt the intensive load of low pressure hot wall to reach the advantage [2-3] of low-cost and high yield.But certainly do not limit the characteristics of monoatomic layer at the aspects such as homogeneity, thickness and film composition of control film, do not reach some high requests of growing integrated circuit technology.
Along with the fast development of super large-scale integration, particularly enter deep sub-micron technique after, a series of new problem has appearred in traditional membrane equipment and technique, such as the filling of deep trench ratio, the timely removing of byproduct of reaction etc.The atomic layer deposition apparatus of the intensive load of low pressure hot wall and technique have that low cost, production lot are large, the filling of good uniformity, deep trench ratio, and [4] such as timely removings of byproduct of reaction, it can become a kind of new membrane equipment and the technique of using in industrial production.
Reference
[1]?T.?Suntola，J.?Anston，Method?for?producing?compound?thin?films[P]，US?Patents，4058430，1977-11-15.
[2]?R.?Chruma，P.G.?Hilton，System?and?process?for?deposition?of?polycrystalline?silicon?with?silane?in?vaccum[P]，US?Patents，3?900?597，1975-08-19.
[3]?R.S.?Rosler，Solid?State?Technology[J]?1977，20(4)?63.
[4]?J.E.J.?Schmitz，Chemical?Vapor?Deposition?of?Tungsten?and?Tungsten?Silicides?for?VLSI/USLI?Applications，Park?Ridge，NJ，Noyes?Publications，1991。
Summary of the invention
In order to improve existing film deposition equipment and technique, the object of the invention is to propose the intensive load atomic layer deposition apparatus of a kind of low pressure hot wall and technique.
The intensive load atomic layer deposition apparatus of low pressure hot wall that the present invention proposes, comprise pulse source of the gas 101, accompany sheet 102, substrate slice 103, reaction tubes 105, process furnace group 106 and substrate slice slabbing 107, described reaction tubes 105 is positioned at process furnace group 106, reaction tubes 105 adopts hot wall to add the reaction boiler tube of thermal low, process furnace group 106 is ring structure, can be that one or more snippets temperature control is to reach rational temperature distribution; The substrate slice 103 that is positioned at reaction tubes 105 adopts the mode of intensive load to arrange, each substrate slice 103 plane is parallel to each other and is positioned on the substrate slice slabbing 107, be spaced apart the 1-30 millimeter between the adjacent substrate sheet 103, the in-plane of each substrate slice 103 keeps vertical substantially with the direction of reaction gas flow; Reaction tubes 105 is near the air flow inlet places and be provided with away from the air flow inlet place and accompany sheet 102, and the described sheet 102 of accompanying is positioned on the substrate slice slabbing 107; Be provided with the gas passage 104 of 2-40 millimeter width around reaction tubes 105 inwalls and the substrate slice 103; Reaction tubes 105 1 ends are the inlet end of pulse source of the gas 101, and described pulse source of the gas 101 inlet ends connect valve; Described pulse source of the gas adopts composition gas, by opening successively different valves, composition gas is entered in the reaction tubes in the mode of ALT pulse.
Among the present invention, described process furnace group 106 connects power supply.
Among the present invention, described reaction tubes 105 1 ends are the inlet end of pulse source of the gas 101, and the other end connects air-bleed system.
Among the present invention, the material of described reaction tubes 105 is with quartz, glass, pottery, silicon carbide or metal.
Among the present invention, the quantity of the substrate slice 103 on described each substrate slice slabbing 107 is the 3-500 sheet.
Among the present invention, form the eddy current pattern of air-flow when flowing in the reaction tubes of reactant gases intensive load in low pressure, with this substrate surface that reaches intensive load uniform atmosphere surrounding is arranged.Accompanying sheet is not the substrate slice of real production usefulness, and its purpose is exactly that the substrate slice that guarantees other production usefulness all is in the uniform atmosphere surrounding, and obtains uniform thin-film deposition.
The operating procedure of the intensive load atomic layer deposition apparatus of a kind of low pressure hot wall that the present invention proposes, concrete steps are as follows:
(1) open the power supply of process furnace group, one or more snippets that makes the process furnace group reaches desired temperature distribution;
(2) at the substrate slice slabbing substrate slice that needs deposition film is installed, at the two ends of substrate slice slabbing the sheet of accompanying for non-production purposes is installed;
(3) the substrate slice slabbing that installs substrate slice is put into reaction tubes, reaction tubes and process furnace group can be horizontal directions or perpendicular to the vertical direction on ground etc.;
(4) closed the fire door of reaction tubes, the air-bleed system that connects vacuum pump, pressure in the reaction tubes is reduced, by opening successively different valves, composition gas is entered in the reaction tubes in the mode of ALT pulse, if need the film of deposit to be formed by two kinds of atoms of AB, or by A and two kinds of gas reactions generations of B, reactant gases is A kind composition gas successively, rare gas element, B kind composition gas, rare gas element, the circulation of four steps realizes the atomic layer deposition of A and B, or the atomic layer deposition of A and two kinds of composition reactions of B, and wherein each step all must make the volume substrate slice perpendicular to the intensive load of air-flow obtain uniform deposit covering;
(5) finish the substrate slice that takes out behind the atomic layer deposition of certain cycle index on the substrate slice slabbing, finish the one-time process flow process.
Among the present invention, the pressure in the described reaction tubes is that several handkerchiefs are to several kPas.
Utilize that homogeneity reaches in the sheet of the thin-film deposition that processing method of the present invention obtains ± (0.1-10) %.(homogeneity is the thickness deviation in the sheet in the sheet).
Among the present invention, described rare gas element is nitrogen or argon gas etc.
Among the present invention, described reactant gases can increase reaction composition gas source A ' and B ' on the basis of A and B combination source of the gas, enters reaction tubes in the mode of ALT pulse, to form compound atomic layer deposition film.
Atomic layer level thin film deposition apparatus and the technique of the intensive load of this low pressure hot wall utilize the intensive load of low pressure, the eddy current pattern that forms air-flow and monoatomic layer absorption from the advantage of restriction, realize the homogeneity thin-film deposition of in enormous quantities, low-cost and height.
Description of drawings
Fig. 1 is the comprehensive synoptic diagram in the intensive load atomic layer deposition reactions of the intensive load of low pressure hot wall district.
Fig. 2 is the schematic cross-section in the intensive load atomic layer deposition reactions of the intensive load of low pressure hot wall district.
Fig. 3 is the intensive load atomic layer deposition of the intensive load of low pressure hot wall stream swirl pattern diagram.
Fig. 4 is the time series synoptic diagram of reaction composition gas ALT pulse air-flow.
Number in the figure: 101 are the pulse source of the gas, and 102 are the sheet of accompanying for non-production purposes, and 103 is substrate slice, and 104 is the gas passage between boiler tube inwall and substrate slice, and 105 is reaction tubes, and 106 is the process furnace group, and 107 is the substrate slice slabbing.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment.In the drawings, for convenience of description, zoomed in or out the size of different piece or the length of time, shown in size do not represent the length of physical size or time, do not reflect the proportionlity of size or time yet.
Reference drawing is the synoptic diagram of embodiments of the invention, and embodiment shown in the present should not be considered to only limit to the specified shape of parts shown in the figure, needs to increase the off-centre that cantilever causes below the support such as auto loading.But in the schematic cross-section of the embodiment of the invention, represent with concentric(al) circles, but this should not be considered to limit the scope of the invention.Simultaneously in the following description, employed term substrate sheet can be understood as circular silicon chip, need do corresponding variation to the substrate slice of other type.
Embodiment 1: aluminum oxide (Al
3O
2) the intensive load atomic layer deposition apparatus of low pressure hot wall and technique
Such as Fig. 1, provide the comprehensive synoptic diagram in the intensive load atomic layer deposition reactions of the intensive load of a low pressure hot wall district.It comprises a reaction composition gas ALT pulse source of the gas 101, low pressure reaction pipe 105, process furnace group 106, perpendicular to 103, one substrate slice slabbings 107 of substrate slice of air flow line; Described reaction composition gas source is A and B, and two kinds of sources of the gas enter in the reaction tubes 105 in the mode of ALT pulse; Be A ' and B ' as increasing reaction composition gas source, also the mode with ALT pulse enters reaction boiler tube, to form compound atomic layer deposition film again.
In entering the interval of reaction boiler tube, two kinds of source of the gas ALT pulses of A, B pass into the rare gas element that does not participate in reacting, with A unnecessary in the cleaning reaction cavity or B and byproduct of reaction.Its objective is and avoid the deposit that directly reacts of two kinds of gaseous constituents of A, B, got rid of simultaneously the detrimentally affect of byproduct of reaction.
The cross-sectional shape of described low pressure reaction pipe 105 is similar and bigger with the shape of the substrate slice 103 that needs deposit, and gas passage is substantially even all around to guarantee substrate slice 103, and width is the 2-40 millimeter.The material of described reaction tubes 105 be with in quartz, glass, pottery, silicon carbide or the metal any.Each substrate slice 103 plane all is parallel to each other, and simultaneously is spaced apart the 1-30 millimeter between each substrate slice 103.
Concrete steps are as follows:
Open the power supply of process furnace group 106, make the multistage of process furnace group 106 all reach about 300
oThe uniform temperature of C distributes;
At substrate slice slabbing 107 10 substrate slices 103 that need deposition film being installed, is respectively to fill 3 sheets 102 of accompanying for non-production purposes at the two ends of substrate slice slabbing 107;
The substrate slice slabbing 107 that installs substrate slice is put into reaction tubes 105;
The fire door of capping pipe 105, the air-bleed system of connection vacuum pump is reduced to below 10 handkerchiefs (Pa) pressure in the reaction tubes 105;
Below reaction composition gas ALT pulse source of the gas 101 all is that mode with unexpected unlatching or cut enters reaction tubes, and the pressure in the reaction tubes 105 keep constant basically, for example about 200 handkerchiefs (Pa):
Pass into first trimethyl aluminium [Tri-Methyl Alumiun, (CH
3)
3Al is called for short TMA] or (N
2) mixture of (TMA+ rare gas element) enters reaction tubes as A kind gas, the aluminium atom (Al) among the TMA and the reaction of the Sauerstoffatom (O) in the substrate surface hydroxyl (HO-) generate methyl alumina base [(CH
3)
2AlO-or CH
3Al (O-)
2] be adsorbed in substrate surface, discharge simultaneously methane (CH
4) by product, reach approaching from limited degree through certain hour, for example after about 5 seconds, the change valve stops to enter of TMA air-flow;
Switch to nitrogen (N
2) enter reaction tubes as rare gas element, remove remaining TMA and by product CH
4After, for example continuing for 10 seconds, the change valve stops N
2Entering of air-flow;
Switch to steam (H
2O) or (H
2The O+ rare gas element) mixture enters reaction tubes as B kind gas, makes to react methyl and the H that is adsorbed in the substrate surface methyl alumina base
2The O reaction generates the hydroxyl on surface, discharges simultaneously CH
4By product reaches approaching from limited degree through certain hour, and for example after about 5 seconds, the change valve stops H
2Entering of O air-flow;
Switch to nitrogen (N
2) enter reaction tubes as rare gas element, remove remaining H
2O and by product CH
4After, for example continuing for 10 seconds, the change valve stops N
2Entering of air-flow;
This four step is realized the atomic layer deposition that aluminium atom (Al) and Sauerstoffatom (O) replace as a circulation, and wherein air-flow formation eddy current pattern makes the volume substrate slice perpendicular to the intensive load of air-flow obtain uniform deposit covering;
Repeat above circulation and reach desired Al
3O
2Behind the film thickness, the reaction tubes of finding time is filled with N
2To near normal pressure; Open fire door and take out substrate slice support and substrate slice, finish the one-time process flow process.
As mentioned above, in the situation that does not depart from spirit and scope of the invention, can also consist of many very embodiment of big difference that have.Should be appreciated that except such as appended claim, the invention is not restricted at the specific examples described in the specification sheets.
Claims (11)
1. intensive load atomic layer deposition apparatus of low pressure hot wall, it is characterized in that comprising pulse source of the gas (101), accompany sheet (102), substrate slice (103), reaction tubes (105), process furnace group (106) and substrate slice slabbing (107), described reaction tubes (105) is positioned at process furnace group (106), reaction tubes (105) adopts hot wall to add the reaction boiler tube of thermal low, process furnace group (106) is ring structure, can be that one or more snippets temperature control is to reach rational temperature distribution; The substrate slice (103) that is positioned at reaction tubes (105) adopts the mode of intensive load to arrange, each substrate slice (103) plane is parallel to each other and is positioned on the substrate slice slabbing (107), be spaced apart the 1-30 millimeter between the adjacent substrate sheet (103), the in-plane of each substrate slice (103) and the direction of reaction gas flow keep vertical substantially; Reaction tubes (105) is near the air flow inlet place and be provided with away from the air flow inlet place and accompany sheet (102), and the described sheet (102) of accompanying is positioned on the substrate slice slabbing (107); Be provided with the gas passage (104) of 2-40 millimeter width around reaction tubes (105) inwall and the substrate slice (103); Reaction tubes (105) one ends are the inlet end of pulse source of the gas (101), and described pulse source of the gas (101) inlet end connects valve; Described pulse source of the gas adopts composition gas, by opening successively different valves, composition gas is entered in the reaction tubes in the mode of ALT pulse.
2. the intensive load atomic layer deposition apparatus of low pressure hot wall according to claim 1 is characterized in that described process furnace group (106) connects power supply.
3. the intensive load atomic layer deposition apparatus of low pressure hot wall according to claim 1 is characterized in that described reaction tubes (105) the other end connects air-bleed system.
4. the intensive load atomic layer deposition apparatus of low pressure hot wall according to claim 1, the material that it is characterized in that described reaction tubes (105) are with quartz, glass, pottery, silicon carbide or metal.
5. the intensive load atomic layer deposition apparatus of low pressure hot wall according to claim 1 is characterized in that the quantity of the substrate slice (103) on described each substrate slice slabbing (107) is the 3-500 sheet.
6. the intensive load atomic layer deposition apparatus of low pressure hot wall according to claim 1, form the eddy current pattern of air-flow when it is characterized in that flowing in the reaction tubes of reactant gases intensive load in low pressure, with this substrate surface that reaches intensive load uniform atmosphere surrounding is arranged.
7. the operating procedure of the intensive load atomic layer deposition apparatus of low pressure hot wall as claimed in claim 1 is characterized in that concrete steps are as follows:
(1) open the power supply of process furnace group, one or more snippets that makes the process furnace group reaches desired temperature distribution;
(2) at the substrate slice slabbing substrate slice that needs deposition film is installed, at the two ends of substrate slice slabbing the sheet of accompanying for non-production purposes can be installed;
(3) the substrate slice slabbing that installs substrate slice is put into reaction tubes, reaction tubes and process furnace group can be horizontal directions or perpendicular to the vertical direction on ground;
(4) closed the fire door of reaction tubes, the air-bleed system that connects vacuum pump, pressure in the reaction tubes is reduced, by opening successively different valves, composition gas is entered in the reaction tubes in the mode of ALT pulse, if need the film of deposit to be formed by two kinds of atoms of AB, or by A and two kinds of gas reactions generations of B, reactant gases is A kind composition gas successively, rare gas element, B kind composition gas, rare gas element, the circulation of four steps realizes the atomic layer deposition of A and B, or the atomic layer deposition of A and two kinds of composition reactions of B, wherein each step all must make the volume substrate slice perpendicular to the intensive load of air-flow obtain uniform deposit covering;
(5) finish the substrate slice that takes out behind the atomic layer deposition of certain cycle index on the substrate slice slabbing, finish the one-time process flow process.
8. technique according to claim 7 is characterized in that the pressure in the described reaction tubes is that several handkerchiefs are to several kPas.
9. technique according to claim 7 is characterized in that described rare gas element is nitrogen or argon gas.
10. technique according to claim 7 is characterized in that described reactant gases on the basis of A and B combination source of the gas, increases reaction composition gas source A ' and B ', enters reaction tubes in the mode of ALT pulse, forms compound atomic layer deposition film.
11. one kind as claimed in claim 7 in the sheet of the thin-film deposition for preparing of technique homogeneity reach ± (0.1-10) %.
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Application publication date: 20130220 |